JPS6367351B2 - - Google Patents
Info
- Publication number
- JPS6367351B2 JPS6367351B2 JP59150836A JP15083684A JPS6367351B2 JP S6367351 B2 JPS6367351 B2 JP S6367351B2 JP 59150836 A JP59150836 A JP 59150836A JP 15083684 A JP15083684 A JP 15083684A JP S6367351 B2 JPS6367351 B2 JP S6367351B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- layer
- semiconductor
- growth
- growth chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000005253 cladding Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
この発明は、半導体レーザの製造方法に係り、
特に、MBE装置でもつて製造されるAlGaAs系
半導体レーザの製造方法に関する。[Detailed Description of the Invention] (a) Field of Industrial Application This invention relates to a method of manufacturing a semiconductor laser,
In particular, the present invention relates to a method of manufacturing an AlGaAs semiconductor laser manufactured using an MBE apparatus.
(ロ) 従来技術
近年において横モードおよび縦モードの制御性
や量産性を考慮した構造の半導体レーザの製造方
法が種々提案されている。(B) Prior Art In recent years, various methods of manufacturing semiconductor lasers have been proposed with structures that take into account controllability of transverse and longitudinal modes and mass production.
ここでは、MBE装置でもつて製造される半導
体レーザの従来の製造方法について簡単に説明す
ると共に、その問題点を指摘する。 Here, we will briefly explain the conventional manufacturing method of semiconductor lasers manufactured using MBE equipment, and point out the problems.
MBE装置の成長室内のモリブデン台に半導
体基板を装着し、この半導体基板の温度を精密
に制御しながら、それぞれ独立した蒸発源に入
れられた原料物質や不純物を分子線の形で注入
して半導体基板の表面に単結晶状態の成長層を
積層させる。 A semiconductor substrate is mounted on a molybdenum stand in the growth chamber of the MBE equipment, and while the temperature of the semiconductor substrate is precisely controlled, raw materials and impurities placed in separate evaporation sources are injected in the form of molecular beams to create a semiconductor. A growth layer in a single crystal state is laminated on the surface of a substrate.
前記積層された半導体基板を成長室から取り
出して、ホトエツチング工程を行うことにより
半導体基板の表面にストライプ溝を形成する。 The laminated semiconductor substrates are taken out of the growth chamber and a photo-etching process is performed to form striped grooves on the surface of the semiconductor substrates.
前記ストライプ溝が形成された半導体基板を
MBE装置の準備室内に導入し、この準備室内
に配設されたArスパツタ装置によつて前記半
導体基板の表面に付着した不純物を除去させる
いわゆるArスパツタクリーニングを行う。 The semiconductor substrate on which the stripe grooves are formed is
The semiconductor substrate is introduced into the preparation chamber of the MBE apparatus, and so-called Ar sputter cleaning is performed to remove impurities adhering to the surface of the semiconductor substrate using an Ar sputtering device disposed in the preparation chamber.
前記Arスパツタクリーニングが行われた半
導体基板を準備室から成長室へと移動させて、
再度の工程と同様に半導体基板に成長層を積
層する。そして半導体基板に電極が形成され
る。 The semiconductor substrate subjected to the Ar spatter cleaning is moved from the preparation chamber to the growth chamber,
Growth layers are stacked on the semiconductor substrate in the same way as in the second step. Then, electrodes are formed on the semiconductor substrate.
上述した半導体レーザでは、Arスパツタクリ
ーニングを行つた後の半導体基板の表面の結晶が
みだれて、表面が高抵抗となつてしまう。従つ
て、横モードおよび縦モードの制御性のよい半導
体レーザを製造するのが困難である。さらに、準
備室内にArスパツタ装置を配設しなければなら
ない上に、ここでArスパツタクリーニングして、
再度成長室に半導体基板を移動させる必要があ
る。そのため、非常に煩わしいと共に、作業に手
間がかかる。その結果、量産性という点において
不向きである。 In the above-described semiconductor laser, the crystals on the surface of the semiconductor substrate after Ar sputter cleaning are degraded, resulting in a high resistance surface. Therefore, it is difficult to manufacture a semiconductor laser with good controllability in transverse mode and longitudinal mode. Furthermore, in addition to having to install an Ar spatter device in the preparation room, Ar spatter cleaning must be done here.
It is necessary to move the semiconductor substrate to the growth chamber again. Therefore, it is very troublesome and requires a lot of work. As a result, it is not suitable for mass production.
(ハ) 目 的
この発明は、簡便な製造工程にすることがで
き、量産性において最適とすると共に、横モード
および縦モードの制御性を良好とする半導体レー
ザの製造方法を提供することを目的としている。(c) Purpose The purpose of the present invention is to provide a method for manufacturing a semiconductor laser that allows for a simple manufacturing process, is optimal for mass production, and has good controllability of transverse mode and longitudinal mode. It is said that
(ニ) 構 成
この発明に係る半導体レーザの製造方法は、
MBE装置の成長室内に導入された半導体基板の
表面に、保護層まで連続して積層する第一の成長
工程と、前記積層された半導体基板を成長室から
取り出して、ストライプ溝を形成するホトエツチ
ング工程と、前記ストライプ溝が形成された半導
体基板を再度成長室内に導入し、前記半導体基板
を加熱しながら、前記半導体基板を砒素でもつて
衝撃しつつ、半導体基板の表面に付着した不純物
を蒸発させるサーマルクリーニング工程と、前記
不純物が蒸発された半導体基板に第二の上部クラ
ツド層およびキヤツプ層を積層する第二の成長工
程とを具備している。(d) Configuration The method for manufacturing a semiconductor laser according to the present invention includes:
A first growth step in which layers are continuously layered up to the protective layer on the surface of a semiconductor substrate introduced into the growth chamber of an MBE apparatus, and a photoetching step in which the layered semiconductor substrate is taken out of the growth chamber and striped grooves are formed. Then, the semiconductor substrate on which the stripe grooves have been formed is introduced into the growth chamber again, and while the semiconductor substrate is heated, the semiconductor substrate is bombarded with arsenic, and impurities adhering to the surface of the semiconductor substrate are evaporated. The method includes a cleaning step and a second growth step of laminating a second upper cladding layer and a cap layer on the semiconductor substrate from which the impurities have been evaporated.
(ホ) 実施例
第１図はMBE装置を簡単に略示した説明図で
ある。(E) Embodiment FIG. 1 is an explanatory diagram simply showing an MBE apparatus.
MBE装置は、例えば10-10torrに設定された超
高真空の成長室１と10-10torrに設定された準備
室２と、10-8torrに設定された導入室３とから構
成されている。半導体基板に積層する成長層は成
長室１にて行われる。 The MBE apparatus is composed of an ultra-high vacuum growth chamber 1 set at 10 -10 torr, a preparation chamber 2 set at 10 -10 torr, and an introduction chamber 3 set at 10 -8 torr. There is. Growth layers to be deposited on a semiconductor substrate are performed in a growth chamber 1.
しかして、この発明の実施例に係る半導体レー
ザの製造方法を以下第２図に従つて説明する。第
２図は、この発明に係る製造方法の一実施例を示
す説明図である。 A method of manufacturing a semiconductor laser according to an embodiment of the present invention will now be described with reference to FIG. FIG. 2 is an explanatory diagram showing an embodiment of the manufacturing method according to the present invention.
(a) MBE装置の成長室１に配設された図示しな
いモリブデン台に、Ｎ型のGaAsからなる半導
体基板１０を装着して所定の方法で加熱する。
図示しない蒸発源にそれぞれ入れられた原料物
質や不純物を分子線の形で蒸発させる。この原
料等を図示しない質量分析計でモニターし、図
示しないコンピータで蒸発源の温度やシヤツタ
を制御することにより、Ｎ型AlXGa1-XAsから
なる下部クラツド層２０と、AlXGa1-XAsから
なる活性層２１と、Ｐ型AlXGa1-XAsからなる
第一の上部クラツド層２２と、Ｎ型GaAsから
なる光吸収層２３と、Ｎ型AlXGa1-XAsからな
る保護層２４とを前記半導体基板１０に積層さ
せる（第一の成長工程）。尚、この場合のAl組
成Xを0.35（但し、活性層２１のみ0.12）にして
いる。(a) A semiconductor substrate 10 made of N-type GaAs is mounted on a molybdenum stand (not shown) disposed in the growth chamber 1 of the MBE apparatus, and heated by a predetermined method.
Raw materials and impurities put into evaporation sources (not shown) are evaporated in the form of molecular beams. By monitoring the raw materials with a mass spectrometer (not shown) and controlling the temperature and shutter of the evaporation source with a computer (not shown), the lower cladding layer 20 made of N-type Al x Ga 1-x As and the Al x Ga 1 An active layer 21 made of -X As, a first upper clad layer 22 made of P-type Al x Ga 1-x As, a light absorption layer 23 made of N-type GaAs, and an N - type Al A protective layer 24 consisting of the following is laminated on the semiconductor substrate 10 (first growth step). Note that the Al composition X in this case is set to 0.35 (however, only the active layer 21 is 0.12).
(b) 前記積層された半導体基板１０を成長室１か
ら外部に取り出した後、半導体基板１０の裏面
をラツピングする。次に、ストライプ溝が形成
されるべき部分以外の保護層２４の表面をホト
レジスト５０で覆う。このホトレジスト５０を
マスクとして保護層２４と、光吸収層２３とを
それぞれ選択エツチングすることにより、スト
ライプ溝３０を形成する。(b) After the stacked semiconductor substrates 10 are taken out from the growth chamber 1, the back surface of the semiconductor substrates 10 is wrapped. Next, the surface of the protective layer 24 other than the portion where the striped grooves are to be formed is covered with a photoresist 50. By selectively etching the protective layer 24 and the light absorption layer 23 using the photoresist 50 as a mask, stripe grooves 30 are formed.
(c) 前記ホトレジスト５０を除去した半導体基板
１０を有機洗浄した後、前記選択エツチングし
た半導体基板１０を硫酸系エツチング液で例え
ば1000Å程度エツチングする。(c) After the semiconductor substrate 10 from which the photoresist 50 has been removed is organically cleaned, the selectively etched semiconductor substrate 10 is etched to a thickness of, for example, about 1000 Å using a sulfuric acid-based etching solution.
(d) 前記半導体基板１０を再度MBE装置の成長
室１のモリブデン台に装着する。ここで、半導
体基板１０を約740℃で加熱しながら、砒素に
て半導体基板の表面を衝撃する。これを、約15
分位行うことにより、半導体基板１０の表面に
付着しているAlやGaおよび酸化物等の不純物
を蒸発させる（いわゆるサーマルクリーニング
工程）。(d) The semiconductor substrate 10 is mounted again on the molybdenum stand in the growth chamber 1 of the MBE apparatus. Here, while heating the semiconductor substrate 10 at about 740° C., the surface of the semiconductor substrate is bombarded with arsenic. This is about 15
By performing the fractionation, impurities such as Al, Ga, and oxides adhering to the surface of the semiconductor substrate 10 are evaporated (so-called thermal cleaning step).
(e) (d)の工程の状態で半導体基板１０の温度を約
600℃にし、(a)と同様の方法でＰ型AlYGa1-YAs
からなる第二の上部クラツド層２５と、P+型
GaAsからなるキヤツプ層２６とを前記保護層
２４の表面に積層する（第二の成長工程）。尚、
この場合のAl組成Yを0.35にしている。以下、
通常の半導体レーザの製造方法と同様に電極４
０，４１が形成される。(e) In the state of step (d), the temperature of the semiconductor substrate 10 is approximately
P-type Al Y Ga 1-Y As at 600℃ and in the same manner as in (a)
a second upper cladding layer 25 consisting of P + type
A cap layer 26 made of GaAs is laminated on the surface of the protective layer 24 (second growth step). still,
In this case, the Al composition Y is set to 0.35. below,
The electrode 4 is
0,41 is formed.
上述したように製造された半導体レーザは、共
振器長が200μｍ、しきい値電流密度（Jth）が
50mA、波長λが780nmとなる。 The semiconductor laser manufactured as described above has a cavity length of 200 μm and a threshold current density (Jth).
50mA, wavelength λ is 780nm.
そして、この半導体レーザの順方向電流（IF）
と順方向電圧（VF）との関係を表す特性図を第
３図に示している。 And the forward current (IF) of this semiconductor laser
A characteristic diagram showing the relationship between VF and forward voltage (VF) is shown in FIG.
尚、上述の実施例では、半導体レーザを製造す
る方法を説明しているが、MBE装置で製造され
る半導体レーザ以外の半導体素子にもサーマルク
リーニングを適用することができる。 Note that although the above-described embodiment describes a method for manufacturing a semiconductor laser, thermal cleaning can also be applied to semiconductor elements other than semiconductor lasers manufactured using an MBE apparatus.
また、上述した実施例のAl組成XとYを0.35とし
ているが、所望の半導体レーザに合わせて適宜に
設定するのが望ましい。但し、第一の成長工程で
積層した各層のAl組成をX＜0.4にした場合、第二
の成長工程で前記各層にAlYGa1-YAsを良好に被
着させることができる。 Further, although the Al compositions X and Y in the above-mentioned embodiment are set to 0.35, it is desirable to set them appropriately according to the desired semiconductor laser. However, if the Al composition of each layer laminated in the first growth step is X <0.4, Al Y Ga 1-Y As can be satisfactorily deposited on each layer in the second growth step.
(ヘ) 効 果
この発明によれば、半導体基板の移動回数を削
減することができるから、従来のような煩わしさ
をなくし、作業の能率を向上させることができ
る。即ち、量産性において最適な製造方法を提供
することができる。(F) Effects According to the present invention, the number of times the semiconductor substrate is moved can be reduced, thereby eliminating the conventional hassle and improving work efficiency. That is, it is possible to provide a manufacturing method that is optimal for mass production.
また、サーマルクリーニングを行うための特別
な装置を設ける必要もなく、半導体基板表面に付
着している不純物を除去しても、表面の結晶のみ
だれをなくすことができる。即ち、その平坦度を
精度よくできることに基づいて、横モードおよび
縦モードの制御性を良好とする半導体レーザを容
易に製造することができる。 Further, there is no need to provide a special device for thermal cleaning, and even if impurities attached to the surface of the semiconductor substrate are removed, the crystals on the surface can be removed. That is, based on the fact that the flatness can be precisely controlled, it is possible to easily manufacture a semiconductor laser with good controllability of the transverse mode and the longitudinal mode.
第１図はMBE装置を簡単に略示した説明図、
第２図は、この発明に係る製造方法の一実施例を
示す説明図、第３図は順方向電流と順方向電圧と
の関係を示す特性図である。
１……成長室、２……準備室、１０……半導体
基板、２０……下部クラツド層、２１……活性
層、２２……第一の上部クラツド層、２３……光
吸収層、２４……保護層、２５……第二の上部ク
ラツド層、２６……キヤツプ層。
Figure 1 is a simple explanatory diagram of the MBE device.
FIG. 2 is an explanatory diagram showing an embodiment of the manufacturing method according to the present invention, and FIG. 3 is a characteristic diagram showing the relationship between forward current and forward voltage. DESCRIPTION OF SYMBOLS 1...Growth chamber, 2...Preparation chamber, 10...Semiconductor substrate, 20...Lower cladding layer, 21...Active layer, 22...First upper cladding layer, 23...Light absorption layer, 24... ... protective layer, 25 ... second upper cladding layer, 26 ... cap layer.
Claims (1)
導体レーザの製造方法において、 MBE装置の成長室内に導入された半導体基板
の表面に、下部クラツド層と、活性層と、第一の
上部クラツド層と、GaAsよりなる光吸収層と、
この光吸収層を保護する保護層とを積層する第一
の成長工程と、 前記積層された半導体基板を成長室から取り出
して、前記第一の上部クラツド層まで達する深さ
および所望の幅のストライプ溝を形成するホトエ
ツチング工程と、 前記ストライプ溝が形成された半導体基板を再
度成長室内に導入し、前記半導体基板を加熱しな
がら、前記半導体基板を砒素でもつて衝撃しつ
つ、半導体基板の表面に付着した不純物を蒸発さ
せるサーマルクリーニング工程と、 前記不純物が蒸発された半導体基板に第二の上
部クラツド層およびキヤツプ層を積層する第二の
成長工程とを具備したことを特徴とする半導体レ
ーザの製造方法。[Claims] 1. In a method for manufacturing an AlGaAs semiconductor laser manufactured using an MBE apparatus, a lower cladding layer, an active layer, and a first layer are formed on the surface of a semiconductor substrate introduced into a growth chamber of the MBE apparatus. an upper cladding layer, a light absorption layer made of GaAs,
a first growth step of laminating a protective layer that protects the light absorption layer; and removing the laminated semiconductor substrate from the growth chamber and forming stripes with a depth and a desired width that reach the first upper cladding layer. A photo-etching process for forming grooves, and the semiconductor substrate on which the striped grooves have been formed are introduced into the growth chamber again, and while the semiconductor substrate is heated, the semiconductor substrate is bombarded with arsenic, and the semiconductor substrate is adhered to the surface of the semiconductor substrate. A method for manufacturing a semiconductor laser, comprising: a thermal cleaning step for evaporating the impurities; and a second growth step for laminating a second upper cladding layer and a cap layer on the semiconductor substrate from which the impurities have been evaporated. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15083684A JPS6129190A (en) | 1984-07-19 | 1984-07-19 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15083684A JPS6129190A (en) | 1984-07-19 | 1984-07-19 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6129190A JPS6129190A (en) | 1986-02-10 |
| JPS6367351B2 true JPS6367351B2 (en) | 1988-12-26 |
Family
ID=15505438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15083684A Granted JPS6129190A (en) | 1984-07-19 | 1984-07-19 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6129190A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256535A (en) * | 1989-03-30 | 1990-10-17 | Asahi Glass Co Ltd | Alarm light for vehicle |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0196897B1 (en) * | 1985-04-02 | 1992-01-22 | Fujitsu Limited | Thermal etching of a compound semiconductor |
| JP2658717B2 (en) * | 1992-02-12 | 1997-09-30 | トヨタ自動車株式会社 | Shift control device for shift-by-wire automatic transmission |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59100583A (en) * | 1982-12-01 | 1984-06-09 | Hitachi Ltd | Semiconductor laser device |
-
1984
- 1984-07-19 JP JP15083684A patent/JPS6129190A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59100583A (en) * | 1982-12-01 | 1984-06-09 | Hitachi Ltd | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256535A (en) * | 1989-03-30 | 1990-10-17 | Asahi Glass Co Ltd | Alarm light for vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129190A (en) | 1986-02-10 |
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