JPH0327584A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPH0327584A JPH0327584A JP18325789A JP18325789A JPH0327584A JP H0327584 A JPH0327584 A JP H0327584A JP 18325789 A JP18325789 A JP 18325789A JP 18325789 A JP18325789 A JP 18325789A JP H0327584 A JPH0327584 A JP H0327584A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- layer made
- gaas
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000031700 light absorption Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 21
- 230000008020 evaporation Effects 0.000 claims description 18
- 230000002265 prevention Effects 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 101150110330 CRAT gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
く産業上の利用分野〉
本発明は、ＭＢＥ装置でもって製造されるＡｌＧａＡｓ
系半導体レーザの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application]
The present invention relates to a method of manufacturing a system semiconductor laser.
〈従来の技術〉
近年、横モード及び縦モードの制御性や量産性を考慮し
た構造の半導体レーザをＭＢＥ装置で製造する方法が提
案されている。<Prior Art> In recent years, a method has been proposed for manufacturing a semiconductor laser with a structure that takes into consideration controllability of transverse mode and longitudinal mode and mass productivity using an MBE apparatus.
通常、ＭＢＥ装置でもって半導体レーザを製造するには
、１回目のＭＢＥ成長工程と、ストライプ溝を形成する
ホトエッチング工程と、２回目のＭＢＥ成長工程とに分
かれている。Normally, manufacturing a semiconductor laser using an MBE apparatus is divided into a first MBE growth process, a photoetching process for forming striped grooves, and a second MBE growth process.
かかる製造工程には、例えばホトエッチング工程におい
て、半導体基板の表面に酸化物等の不純物が付着してし
まうという不具合がある。そのため、２回目のＭＢＥ成
長工程の前に、前記不３屯物を除去する必要があった。Such a manufacturing process has a problem in that impurities such as oxides adhere to the surface of the semiconductor substrate during, for example, a photoetching process. Therefore, it was necessary to remove the impurities before the second MBE growth step.
しかして、通常行われている不純物の除去方法では、２
回目のＭＢＥ成長工程で成長膜の積層状態が非２ｉ；に
悪くなる。そこで、いわゆるサーマルクリーニンク工程
（半導体基板に砒素分子線を当てながら高温にする）が
考えられた。このザーマルクリーニンク工程を行うと、
２回目のＭＢＥ成長工程による成長層の積層状態を良好
とすることができる。そのため、半導体レーザの製造方
法では、このサーマルクリーニング工程を行うことが非
常に重要となる。However, in the commonly used impurity removal method, 2
In the second MBE growth step, the stacked state of the grown film deteriorates to non-2i; Therefore, a so-called thermal cleaning process (in which the semiconductor substrate is heated to a high temperature while being exposed to an arsenic molecular beam) was devised. When you perform this thermal cleaning process,
The stacked state of the grown layers by the second MBE growth process can be improved. Therefore, in the semiconductor laser manufacturing method, it is very important to perform this thermal cleaning step.
〈発明が解決しようとする課題〉
しかして、通常、この種の半導体レーザの製造方法では
、１回目のＭＢＥ成長工程でＧａＡｓからなる光吸収層
が最後に成長させられる。ところが、前記光吸収層は、
半導体基板の温度を上昇させるにつれてその蒸発速度が
速くなる特性を持っている（第２図参照）関係上、高温
で行われるザーマルクリーニング工程中に前記光吸収層
が蒸発される。すなわち、サーマルクリーニング工程を
行うことは実質的に不可能であり、横モードおよび縦モ
ードの制御性のよい半導体レーザを製造することは困難
であった。<Problems to be Solved by the Invention> However, in the manufacturing method of this type of semiconductor laser, normally, a light absorption layer made of GaAs is grown last in the first MBE growth step. However, the light absorption layer is
Since the evaporation rate of the semiconductor substrate increases as the temperature of the semiconductor substrate increases (see FIG. 2), the light absorption layer is evaporated during the thermal cleaning process performed at high temperature. That is, it is virtually impossible to perform a thermal cleaning process, and it has been difficult to manufacture a semiconductor laser with good controllability in transverse mode and longitudinal mode.
本発明は上記事情にｆ＆ ’Ｊて創案されたもので、ヅ
ーマルクリーニング工程中における光吸収装層の蒸発を
防止するとともに、２回目のＭＢＥ威長工程による成長
層の積層状態を良好とする半導体レーザの製造方法を提
供することを目的としている。The present invention was devised in consideration of the above circumstances, and it prevents the evaporation of the light absorbing layer during the thermal cleaning process, and improves the stacking state of the grown layers during the second MBE lengthening process. The purpose of this invention is to provide a method for manufacturing a semiconductor laser.
〈課題を解決するための手段〉
本発明に係る半導体レーザの製造方法は、ＭＢＥ装置で
もって製造されるＡｌＧａＡｓ系半導体レーザの製造方
法であって、
Ａ Ｉ Ｘ１ Ｇａ ＋ − Ｘ． Ａｓからなる下部
クラソ１層と、ＡＩ．２Ｇａｌ−Ｘ２ＡＳからなる活１
生層と、八ｌ）（３０ａ＋−）＋３八Ｓからなる第１の
−１二部クラッド層と、ＧａＡｓからなる光吸収層と、
組成比をＸ４＞０． １にした八ＩｘａＧａ＋−ｙ４Ａ
ｓからなる蒸発防止層とを半導体基板の表面に積層する
第１の成長工程と、
前記積層された半導体基板の幅方向中央部に前記第１の
上部クラッド層まで達する深さおよび所望の幅のストラ
イプ溝を形威ずるホｌ・エッヂング工程と、
前記ストライプ溝が形威された半導体基板を加熱しつつ
、その表面を砒素でもって衝撃して表面に付着した不純
物を蒸発させるサーマルクリーニング工程と、
前記不純物が蒸発された半導体基板にＡｌｖ Ｇａ，ｙ
Ａｓからなる第２の上部クラッド層および高不純物濃
度ＧａＡｓからなるキャップ層を積層する第２の成長工
程とからなる。<Means for Solving the Problems> A method for manufacturing a semiconductor laser according to the present invention is a method for manufacturing an AlGaAs-based semiconductor laser manufactured by an MBE apparatus, and includes a method for manufacturing an AlGaAs-based semiconductor laser using an A I X1 Ga + − X. A lower Kraso layer consisting of As, and an AI. Active 1 consisting of 2Gal-X2AS
a first −1 bipartite cladding layer made of 8l)(30a+−)+38S, and a light absorption layer made of GaAs;
The composition ratio is set to X4>0. 8IxaGa+-y4A made into 1
a first growth step of laminating an evaporation prevention layer consisting of S on the surface of the semiconductor substrate; a hole/edging process for forming striped grooves; a thermal cleaning process for evaporating impurities attached to the surface by bombarding the surface with arsenic while heating the semiconductor substrate on which the striped grooves have been formed; Alv Ga,y is applied to the semiconductor substrate on which the impurities have been evaporated.
It consists of a second growth step of laminating a second upper cladding layer made of As and a cap layer made of GaAs with a high impurity concentration.
〈実施例〉
以下、図面を参照して本発明に係る一実施例を説明する
。<Example> Hereinafter, an example according to the present invention will be described with reference to the drawings.
第１図（ａ）〜（ｄ）は本発明の一実施例に係る半導体
レーザの製造方法を示す説明図である。FIGS. 1(a) to 1(d) are explanatory diagrams showing a method for manufacturing a semiconductor laser according to an embodiment of the present invention.
（ａ）図示しないＭｌ３＋Ｅ装置内に装着したＮ型のＧ
ａＡｓからなる半導体基板１０を所定の方法で加熱する
。(a) N-type G installed in the Ml3+E device (not shown)
A semiconductor substrate 10 made of aAs is heated by a predetermined method.
蒸発源にそれぞれ入れられた原料物質や不純物を？子線
の形で蒸発させる。この原料等を図示しない質量分析計
でモニターし、図示しないコンビュタで蒸発源の温度や
シャンクを制御することにより、Ｎ型Ａｌｘ＋Ｇａ＋−
Ｘ，Ａｓからなる下部クラソド層２０と、ＡＩｘｚＧａ
＋−＋＋ＪＳからなる活性層２１と、Ｐ型旧×３Ｇａｌ
−Ｘ３Ａｓからなる第１の上部クラッド層２２と、Ｎ型
ＧａＡｓからなる光吸収層２３と、Ｎ型＾ＩＸａＧａ＋
−ｘａＡｓからなる蒸発防止層２４とを前記半導体基板
１０に積層させる（第１の成長工程）。なお、この場合
の各層のＡＩ＆ｌ１成として例えば、Ｘ１は０．５０、
８■は０．１２、Ｘ３およびＸ４は０．３５にそれぞれ
設定する。What about the raw materials and impurities put into each evaporation source? Evaporate in the form of child rays. By monitoring this raw material etc. with a mass spectrometer (not shown) and controlling the temperature and shank of the evaporation source with a computer (not shown), N-type Alx+Ga+-
A lower clathodic layer 20 made of X, As and AIxzGa
+-++ Active layer 21 consisting of JS and P-type old × 3 Gal
-The first upper cladding layer 22 made of X3As, the light absorption layer 23 made of N-type GaAs, and the N-type ^IXaGa+
- An evaporation prevention layer 24 made of xaAs is laminated on the semiconductor substrate 10 (first growth step). In addition, in this case, as the AI&l1 composition of each layer, for example, X1 is 0.50,
8■ is set to 0.12, and X3 and X4 are set to 0.35.
（ｂ）前記各層が、積層された半導体基板１０をＭＢＥ
装置から外部に取り出した後、半導体基板１０の裏面を
ラッピングする。次に、ストライブ溝が形威されるべき
部分以外の蒸発防止層２４の表面をホトレジスト５０で
覆う。このホトレジスト５０をマスクとして第１の」二
部クラット層２２に達するまで蒸発防止層２４と光吸収
層２３とをそれぞれ選択エッチングすることにより、ス
トライプ溝３０を形戒する。(b) The semiconductor substrate 10 in which each layer is stacked is subjected to MBE.
After taking it out from the device, the back surface of the semiconductor substrate 10 is wrapped. Next, the surface of the evaporation prevention layer 24 other than the portion where the stripe grooves are to be formed is covered with a photoresist 50. Using this photoresist 50 as a mask, the evaporation prevention layer 24 and the light absorption layer 23 are selectively etched until the first two-part crat layer 22 is reached, thereby forming the striped grooves 30.
（Ｃ）前記ボ１・レジス１・５０を除去した半導体基板
１０を有機洗浄する。その後、前記半導体基板ＩＯを再
度ＭＢＥ装置内に装着する。ここで、半導体基板ｌＯに
砒素分子線を当てながら約７４０゜Ｃで加熱ずる。(C) The semiconductor substrate 10 from which the holes 1, resists 1, and 50 have been removed is organically cleaned. After that, the semiconductor substrate IO is mounted into the MBE apparatus again. Here, the semiconductor substrate lO is heated at about 740° C. while being irradiated with an arsenic molecular beam.
この加熱を約１５分程度行うことにより、半導体基板１
０の表面にイ」着している酸化物等の不純物を藤発させ
る （サーマルクリーニング工程）。なお、スＩ・ライ
ブ溝３０部分は、第１の上部クラソト層２２が露出して
いるが、第１の上部クラソト層２２の葎発速度は、非常
に遅いのでほとんど蒸発することはない。一方、光吸収
層２３の表面に蒸発防止層２４を被着さセているため、
光吸収層２３の葎発は１νｊ１［される。By performing this heating for about 15 minutes, the semiconductor substrate 1
Thermal cleaning process removes impurities such as oxides adhering to the surface of the 0. Although the first upper Krasotho layer 22 is exposed in the sliver groove 30 portion, the seedling rate of the first upper Krasotho layer 22 is very slow, so it hardly evaporates. On the other hand, since the evaporation prevention layer 24 is deposited on the surface of the light absorption layer 23,
The light emission of the light absorption layer 23 is 1νj1[.
（ｄ）前記（Ｃ）の工程の状態で半導体基板１０の温度
を約６００゜Ｃにし、（ａ）と同様の方法でＰ型Ａｌｙ
Ｇｉ１＋−ｙＡｓからなる第２の上部クラッド層２５
と、Ｐ゛型ＧａＡｓからなるキャップ層２６とを前記ス
トライプ溝３０が形成された藤発肪止層２４の表曲に積
層する（第２の成長工程）。なお、この場合のＡｌ組威
，も０．３５にしている。以下、通常の半導体レーザの
製造方法と同様に電極４０、４１が形威される。(d) In the state of step (C) above, the temperature of the semiconductor substrate 10 is set to about 600°C, and P-type Al
Second upper cladding layer 25 made of Gi1+-yAs
and a cap layer 26 made of P'-type GaAs are laminated on the curved surface of the Fujistopper layer 24 in which the stripe grooves 30 are formed (second growth step). Note that the aluminum strength in this case is also set to 0.35. Thereafter, the electrodes 40 and 41 are formed in the same manner as in a normal semiconductor laser manufacturing method.
？かして、上述した光吸収層２３と蒸発防止層２４（Ａ
Ｉ組或は０．１以上）におＵる温度と蒸発速度との関係
を第２図に示している。同図に示すように、蒸発防止層
２４はほとんど蒸発しないことがわかる。? Thus, the light absorption layer 23 and the evaporation prevention layer 24 (A
FIG. 2 shows the relationship between temperature and evaporation rate in group I or 0.1 or higher). As shown in the figure, it can be seen that the evaporation prevention layer 24 hardly evaporates.
そして、光吸収層２３（ＧａＡｓ）は温度を■上昇する
につれて蒸発速度が速くなることがわかる。It can also be seen that the evaporation rate of the light absorption layer 23 (GaAs) increases as the temperature increases.
なお、上述した実施例において、ストライプ溝３０の幅
と第１の−Ｌ部クラット層２２の膜厚とで、半導体レー
ザの横モート′および縦モートを制御している。In the embodiment described above, the width of the stripe groove 30 and the thickness of the first -L portion crat layer 22 control the transverse moat' and the longitudinal moat of the semiconductor laser.
〈発明の効果〉
本発明に係る半導体レーザの製造方法によると、勺一マ
ルクリーニング工程における光吸収層の茅発を蒸発防止
層でほとんど防１１二することができる。<Effects of the Invention> According to the method for manufacturing a semiconductor laser according to the present invention, the evaporation prevention layer can almost completely prevent the light absorption layer from oxidizing during the first cleaning step.
そのため、サーマルクリーニング工程が良好に行えるこ
とに基づいて、２回目のＭＢＥ威長工程による各層の積
層状態を良好にすることができる。Therefore, based on the fact that the thermal cleaning process can be performed well, it is possible to improve the lamination state of each layer by the second MBE lengthening process.
その結果、上述したような半導体レーザを容易に製造す
ることができる。As a result, a semiconductor laser as described above can be easily manufactured.
さらに、蒸発防止層は、ＡｌＧａＡｓからなるため、Ｍ
ＢＥ装置で他の各層と連続して成長させることができる
。従って、製造における特別な方法を必要とせず、しか
も製造工程を増やす必要もないという効果を奏する。Furthermore, since the evaporation prevention layer is made of AlGaAs, M
It can be grown successively with other layers using a BE device. Therefore, there is an effect that no special manufacturing method is required, and there is no need to increase the number of manufacturing steps.
第１図（ａ）〜（ｄ）は本発明の一実施例に係る半導体
レーザの製造方法を示す説明図、第２図は半導体基板の
温度と蒸発速度との関係を示す特性図である。
１０・・・半導体基板、２０・・・下部クラッド層、２
１・・・活性層、２２・・・第１の上部クラッド層、２
３・・・光吸収層、２４・・・蒸発防止層、２５・・・
第２の上部クラッド層、２６・・・キャソプ層、３０・
・・ストライプ溝。FIGS. 1(a) to 1(d) are explanatory diagrams showing a method of manufacturing a semiconductor laser according to an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing the relationship between the temperature of a semiconductor substrate and the evaporation rate. 10... Semiconductor substrate, 20... Lower cladding layer, 2
1... Active layer, 22... First upper cladding layer, 2
3... Light absorption layer, 24... Evaporation prevention layer, 25...
Second upper cladding layer, 26... cassop layer, 30.
・Stripe groove.
Claims (1)
導体レーザの製造方法において、 Ａｌ＿ｘ＿１Ｇａ＿１＿−＿ｘ＿１Ａｓからなる下部ク
ラッド層と、Ａｌ＿ｘ＿２Ｇａ＿１＿−＿ｘ＿２Ａｓか
らなる活性層と、Ａｌ＿ｘ＿３Ｇａ＿１＿−＿ｘ＿３Ａ
ｓからなる第１の上部クラッド層と、ＧａＡｓからなる
光吸収層と、組成比を＿ｘ＿４＞０．１にしたＡｌ＿ｘ
＿４Ｇａ＿１＿−＿ｘ＿４Ａｓからなる蒸発防止層とを
半導体基板の表面に積層する第１の成長工程と、 前記積層された半導体基板の幅方向中央部に前記第１の
上部クラッド層まで達する深さおよび所望の幅のストラ
イプ溝を形成するホトエッチング工程と、 前記ストライプ溝が形成された半導体基板を加熱しつつ
、その表面を砒素でもって衝撃して表面に付着した不純
物を蒸発させるサーマルクリーニング工程と、 前記不純物が蒸発された半導体基板にＡｌ＿ＹＧａ＿１
＿−＿ＹＡｓからなる第２の上部クラッド層および高不
純物濃度ＧａＡｓからなるキャップ層を積層する第２の
成長工程とを具備したことを特徴とする半導体レーザの
製造方法。(1) In a method for manufacturing an AlGaAs semiconductor laser manufactured using an MBE apparatus, a lower cladding layer made of Al_x_1Ga_1_-_x_1As, an active layer made of Al_x_2Ga_1_-_x_2As, and an Al_x_3Ga_1_-_x_3A
A first upper cladding layer made of S, a light absorption layer made of GaAs, and Al_x with a composition ratio of _x_4>0.1.
a first growth step of laminating an evaporation prevention layer made of _4Ga_1_-_x_4As on the surface of the semiconductor substrate; a photo-etching process for forming striped grooves of a wide width; a thermal cleaning process for evaporating impurities attached to the surface by bombarding the surface with arsenic while heating the semiconductor substrate in which the striped grooves have been formed; and evaporating impurities attached to the surface. Al_YGa_1 on the semiconductor substrate on which is evaporated
A method for manufacturing a semiconductor laser, comprising: a second growth step of laminating a second upper cladding layer made of YAs and a cap layer made of GaAs with a high impurity concentration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18325789A JPH0327584A (en) | 1989-07-14 | 1989-07-14 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18325789A JPH0327584A (en) | 1989-07-14 | 1989-07-14 | Manufacture of semiconductor laser |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16533284A Division JPS6142985A (en) | 1984-08-06 | 1984-08-06 | Semiconductor laser and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0327584A true JPH0327584A (en) | 1991-02-05 |
Family
ID=16132505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18325789A Pending JPH0327584A (en) | 1989-07-14 | 1989-07-14 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0327584A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1033796A2 (en) * | 1999-03-03 | 2000-09-06 | Matsushita Electronics Corporation | Semiconductor laser and a manufacturing method for the same |
| KR100475493B1 (en) * | 2000-03-03 | 2005-03-10 | 조셉 앤셔 | High security buckle assembly |
-
1989
- 1989-07-14 JP JP18325789A patent/JPH0327584A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1033796A2 (en) * | 1999-03-03 | 2000-09-06 | Matsushita Electronics Corporation | Semiconductor laser and a manufacturing method for the same |
| EP1033796A3 (en) * | 1999-03-03 | 2002-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and a manufacturing method for the same |
| US6822989B1 (en) | 1999-03-03 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and a manufacturing method for the same |
| KR100475493B1 (en) * | 2000-03-03 | 2005-03-10 | 조셉 앤셔 | High security buckle assembly |
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