JPS6366333B2 - - Google Patents
Info
- Publication number
- JPS6366333B2 JPS6366333B2 JP5311381A JP5311381A JPS6366333B2 JP S6366333 B2 JPS6366333 B2 JP S6366333B2 JP 5311381 A JP5311381 A JP 5311381A JP 5311381 A JP5311381 A JP 5311381A JP S6366333 B2 JPS6366333 B2 JP S6366333B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- reflector
- irradiated
- cable
- irradiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000004132 cross linking Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229920003020 cross-linked polyethylene Polymers 0.000 description 1
- 239000004703 cross-linked polyethylene Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
- B29C71/04—After-treatment of articles without altering their shape; Apparatus therefor by wave energy or particle radiation, e.g. for curing or vulcanising preformed articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0877—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using electron radiation, e.g. beta-rays
Description
【発明の詳細な説明】
本発明は、絶縁電線、合成樹脂チユーブ等の長
尺体への電子線照射方法の改良に関し、長尺体の
円周方向に均一な電子線照射をするための方法に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method for irradiating an elongated object with an electron beam, such as an insulated wire or a synthetic resin tube, and a method for uniformly irradiating an elongated object with an electron beam in the circumferential direction. Regarding.
一般に、ポリエチレン等のプラスチツクにより
構成された絶縁電線の絶縁被覆や、合成樹脂チユ
ーブ等に電子線を照射して架橋結合を導入せしめ
て耐熱性及び物理特性を向上させることが行なわ
れている。 Generally, insulating coatings of insulated wires made of plastic such as polyethylene, synthetic resin tubes, etc. are irradiated with electron beams to introduce crosslinking bonds to improve heat resistance and physical properties.
従来、プラスチツクを被覆した絶縁電線、プラ
スチツクチユーブ等の長尺体に電子線を照射する
方法として第１図に示す方法が知られている。第
１図において、１は電子線照射器であり、その照
射窓２からは電子線（破線で示す）が放射され
る。３ａ，３ｂは絶縁電線４を架け渡して走行さ
せるガイドホイールであり、該電線は矢印ａ，
ｂ，ｃ，ｄ，ｅ，ｆの順にガイドホイール３ａ，
３ｂを巡り、走行される。このようにして走行す
る絶縁電線４には、上記した電子線照射器から電
子線が照射されるが、絶縁電線４が例えば矢印
ｂ，ｄのところを通過しているときに電子線が照
射されない絶縁電線の半面は、電線４が矢印ｃ，
ｅのところを通過しているときに照射されるの
で、第２図に拡大して示す絶縁電線４における被
覆層５は矢印の方向から電子線を照射したときに
電子線が銅等の導電体６により部分的に遮蔽され
る部分（斜線部）を生じても結果的には全面が照
射を受けて架橋される。但し、この架橋のために
は、電子線の透過厚さとしてＤ＝√2−2（ここ
でＲ：被覆電線４の半径、ｒ：導電体６の半径）
を必要とする。このように透過厚さＤの電子線を
得るには高加速電圧の電子線照射器を必要とす
る。 2. Description of the Related Art Conventionally, the method shown in FIG. 1 is known as a method of irradiating an elongated body such as an insulated wire covered with plastic or a plastic tube with an electron beam. In FIG. 1, 1 is an electron beam irradiator, and an electron beam (indicated by a broken line) is emitted from an irradiation window 2 of the electron beam irradiator. Reference numerals 3a and 3b are guide wheels for running an insulated wire 4 over which the wires are connected as indicated by arrows a,
Guide wheels 3a, b, c, d, e, f in order
It will be driven around 3b. The insulated wire 4 traveling in this manner is irradiated with an electron beam from the above-mentioned electron beam irradiator, but the electron beam is not irradiated when the insulated wire 4 is passing through arrows b and d, for example. On the half side of the insulated wire, wire 4 is indicated by arrow c,
Since the coating layer 5 of the insulated wire 4, which is shown enlarged in FIG. Even if a portion (hatched area) is partially shielded by 6, the entire surface is eventually irradiated and crosslinked. However, for this crosslinking, the transmission thickness of the electron beam is D = √ 2 - 2 (where R: radius of the covered wire 4, r: radius of the conductor 6).
Requires. In order to obtain an electron beam with a transmission thickness D as described above, an electron beam irradiator with a high acceleration voltage is required.
このように欠点を除去するものとして、第３図
の如く、電子線照射器１の照射窓２の下で絶縁電
線４を矢印のように回転させながら走行させて照
射することが考えられる。この場合には、電子線
の透過厚さとしてｄ＝Ｒ−ｒでよく、低い加速電
圧の電子線照射器で効率良く照射できる。しか
し、絶縁電線４を矢印のように回転させるには、
この回転に同期してサプライ装置、巻取装置及び
キヤプスタン等を回転させつつ絶縁電線４を走行
させなければならず、設備が複雑かつ高価になる
という欠点があつた。 As a way to eliminate such defects, it is conceivable to irradiate by running an insulated wire 4 under the irradiation window 2 of the electron beam irradiator 1 while rotating it as shown by the arrow, as shown in FIG. In this case, the transmission thickness of the electron beam may be d=R−r, and efficient irradiation can be achieved using an electron beam irradiator with a low acceleration voltage. However, in order to rotate the insulated wire 4 as shown by the arrow,
It is necessary to run the insulated wire 4 while rotating the supply device, winding device, capstan, etc. in synchronization with this rotation, which has the disadvantage that the equipment becomes complicated and expensive.
又、第４図に示す如く、絶縁電線４に三方向か
ら電子線を照射することも考えられるが、そのた
めには三方向から電子線を照射するための３台の
電子線照射器１ａ，１ｂ，１ｃを必要とするとい
う欠点がある。 It is also possible to irradiate the insulated wire 4 with electron beams from three directions as shown in FIG. , 1c is required.
上記した各欠点を除去するものとして、従来第
５図に示すものも知られている。第５図におい
て、７は反射板、８はマスクであり、電子線照射
器１の照射窓２からの電子線は反射板７で反射さ
れて電線４に照射され、又照射窓２からの電子線
はマスク８で弱められ、上記の反射された電子線
と同等の照射量で電線４に照射される。。このよ
うに反射された電子線を絶縁電線４に照射するこ
とにより、１パスで電線４の表裏を同時に照射す
ることができる。 As a device that eliminates each of the above-mentioned drawbacks, a device shown in FIG. 5 is also known. In FIG. 5, 7 is a reflector, 8 is a mask, the electron beam from the irradiation window 2 of the electron beam irradiator 1 is reflected by the reflector 7 and irradiated onto the electric wire 4, and the electrons from the irradiation window 2 are The beam is weakened by a mask 8 and is irradiated onto the electric wire 4 with a dose equivalent to that of the reflected electron beam. . By irradiating the insulated wire 4 with the electron beam reflected in this manner, the front and back sides of the wire 4 can be irradiated simultaneously in one pass.
ところで、第５図について説明した電子線照射
方法では照射器１の加速電圧を100〜125KVと
し、径が1.0mmφ、被覆厚40μ程度の、例えばエナ
メル線に適用することはできるが、導電体の径が
数mmφ以上、被覆厚１mm以上の絶縁電線或いは電
力ケーブルには適用することが困難である。即
ち、このような被覆厚をもつた絶縁電線或いは電
力ケーブルに放射線を照射して架橋する場合に
は、1MeV以上の電子線照射器を用いるのが普通
であり、この場合この照射器から放射され、上記
反射板７によつて反射される反射電子線により電
子線照射窓２が過熱され、トラブルを生ずる。
又、上記反射電子線及びマスク８で弱められた電
子線のいずれもが充分に至らない部分、すなわち
絶縁電線４における斜線部分では被覆層５に架橋
不足を生ずる。 By the way, in the electron beam irradiation method explained with reference to FIG. 5, the acceleration voltage of the irradiator 1 is set to 100 to 125 KV, and it can be applied to e.g. enamelled wire with a diameter of 1.0 mmφ and a coating thickness of about 40 μm, but It is difficult to apply this method to insulated wires or power cables with a diameter of several mmφ or more and a coating thickness of 1 mm or more. In other words, when insulated wires or power cables with such coating thickness are cross-linked by irradiating radiation, it is common to use an electron beam irradiator with a voltage of 1 MeV or more. The electron beam irradiation window 2 is overheated by the reflected electron beam reflected by the reflecting plate 7, causing trouble.
Further, in the portions where neither the reflected electron beam nor the electron beam weakened by the mask 8 reach sufficiently, that is, the hatched portions of the insulated wire 4, the coating layer 5 is insufficiently crosslinked.
本発明は、上記した従来の各欠点を除去し、電
子線照射窓の過熱の虞れがなく、絶縁電線（ケー
ブル）等の長尺体の被覆（絶縁層）を全周につい
て略均一に照射することができる長尺体の電子線
照射方法を提供するものである。 The present invention eliminates each of the above-mentioned conventional drawbacks, eliminates the risk of overheating of the electron beam irradiation window, and irradiates the covering (insulating layer) of a long object such as an insulated wire (cable) substantially uniformly over the entire circumference. The present invention provides a method for irradiating an elongated object with an electron beam.
以下に、本発明の方法を第６図乃至第８図の実
施例によつて詳細に説明する。図において、１は
電子線照射器であり、前記した如くその照射窓２
からは破線で示すように電子線が放射される。９
は被照射体であるケーブルであり、照射窓２の下
を走行される。１０は反射体であり、半円筒状又
は放物線状等の凹面体からなり、上記照射器１か
らの電子線を反射してケーブル９に照射すべく、
該ケーブルの位置に焦点がくるように配設されて
いる。１１はビームマスクであり、照射窓２とケ
ーブル９との間に介在され、該ケーブルに電子線
が照射され得る範囲Ｘ，Ｙにおける範囲Ｘのみ
を、上記ケーブル９に近接して覆つている。 In the following, the method of the present invention will be explained in detail with reference to the embodiments shown in FIGS. 6 to 8. In the figure, 1 is an electron beam irradiator, and as mentioned above, its irradiation window 2
An electron beam is emitted from the center as shown by the broken line. 9
is a cable which is the object to be irradiated, and is run under the irradiation window 2. Reference numeral 10 denotes a reflector, which is made of a semi-cylindrical or parabolic concave body, and is designed to reflect the electron beam from the irradiator 1 and irradiate it onto the cable 9.
It is arranged so that the focus is on the position of the cable. Reference numeral 11 denotes a beam mask, which is interposed between the irradiation window 2 and the cable 9, and covers only the range X in the ranges X and Y in which the cable can be irradiated with the electron beam, close to the cable 9.
上記第６図乃至第８図について説明した電子線
照射方法では、照射器１から放射され、反射体１
０で反射された電子線はケーブル９の側面及び裏
面に照射され、又照射器１からの直接の電子線が
ケーブル９の表面に照射され、該ケーブルは全面
に亘り電子線が照射されるので、前記従来例で説
明した未架橋を生ずる虞れがない。上記反射体１
０からの反射電子線は、直接探の電子線に比して
エネルギー及び強度共に低下するので、前記ビー
ムマスク１１により直接の電子線を部分的に遮蔽
し、ケーブル９の表、裏、側面での電子線照射を
均一ならしめている。従つて均一性の要求されな
いときには、ビームマスク１１は必要ない。又、
上記ビームマスク１１は照射窓２から離して、ケ
ーブル９に近いところに配設されているので、ビ
ームマスク１１からの反射電子線により照射窓２
の過熱される虞れはない。 In the electron beam irradiation method explained with reference to FIGS. 6 to 8 above, the electron beam is emitted from the irradiator 1 and the reflector 1
The electron beam reflected at 0 is irradiated onto the side and back surfaces of the cable 9, and the direct electron beam from the irradiator 1 is irradiated onto the surface of the cable 9, so that the entire surface of the cable is irradiated with the electron beam. , there is no risk of non-crosslinking as explained in the prior art example. The above reflector 1
Since the reflected electron beam from 0 has lower energy and intensity than the electron beam from direct detection, the direct electron beam is partially shielded by the beam mask 11, and the front, back, and side surfaces of the cable 9 are This makes the electron beam irradiation uniform. Therefore, the beam mask 11 is not required when uniformity is not required. or,
Since the beam mask 11 is placed away from the irradiation window 2 and close to the cable 9, the reflected electron beam from the beam mask 11 causes the irradiation window to
There is no risk of overheating.
上記したビームマスク１１は中空のパイプ状と
なし、この中には冷却水を通して電子線直射によ
る発熱を吸収するようにすることが望ましい。
又、ビームマスク１１はケーブルの径よりわずか
に大なる幅を有することが好ましい。更に、ビー
ムマスク１１は直射電子線の吸収を良好にし、反
射電子線による照射窓２の過熱を防止するため
に、導電体により構成し、これを電気的に接地す
ることが望ましく、又反射電子線の強度はビーム
マスク１１の材質の原子番号が小さい程、小であ
るから、ビームマスクの材質はAl，Ti等の原子
量の小さい金属であることが望ましい。 It is preferable that the beam mask 11 described above has a hollow pipe shape, and that cooling water is passed through the pipe to absorb heat generated by direct exposure to the electron beam.
Also, it is preferable that the beam mask 11 has a width slightly larger than the diameter of the cable. Further, in order to improve absorption of direct electron beams and prevent overheating of the irradiation window 2 due to reflected electron beams, the beam mask 11 is desirably made of a conductive material and electrically grounded. Since the intensity of the line decreases as the atomic number of the material of the beam mask 11 decreases, it is desirable that the material of the beam mask is a metal with a low atomic weight, such as Al or Ti.
上記反射体１０は、該反射体からの散乱電子線
のエネルギー、強度が反射体１０の原子番号が大
きい程、大であることから、鉛、タンタル、金、
タングステン等原子番号70以上の材質で作製する
と効果的である。反射体１０の構造材としてステ
ンレス等を使用し、反射表面だけ前記鉛等の金属
をメツキ又はプレートにして配設することも可能
である。この場合、メツキ又はプレートの厚さは
１mm以下で充分である。上記反射体の形状として
は、半円筒状又は放物線状が好ましく、ケーブル
９を前記の如くその焦点近傍に配することによ
り、ケーブル９には効率良く均一に電子線が照射
され、ケーブル９は均一に架橋することができ
る。この反射体１０もビームマスク１１と同様に
水冷構造とすることが望ましい。 The reflector 10 is made of lead, tantalum, gold, etc., because the energy and intensity of the scattered electron beam from the reflector increases as the atomic number of the reflector 10 increases.
It is effective to use a material with an atomic number of 70 or higher, such as tungsten. It is also possible to use stainless steel or the like as the structural material of the reflector 10, and to arrange the metal such as lead as a plating or plate only on the reflective surface. In this case, it is sufficient for the thickness of the plating or plate to be 1 mm or less. The shape of the reflector is preferably semi-cylindrical or parabolic. By arranging the cable 9 near its focal point as described above, the cable 9 is efficiently and uniformly irradiated with the electron beam, and the cable 9 is uniformly irradiated with the electron beam. can be crosslinked. It is desirable that this reflector 10 also have a water-cooled structure like the beam mask 11.
次に、本発明の一具体例を第９図について説明
する。第９図において、１は電子線照射器、２は
照射窓、９は被照射体としての後述するポリエチ
レン被覆電線、１０は反射体であり、これらは既
に説明したものである。反射体１０はその構造材
としてステンレスが用いられ、該ステンレスによ
り中空のジヤケツト１２が形成されている。１３
はこのジヤケツト１２に水冷用の水を送り込む入
口、１４は水の出口を示すものである。１５は鉛
よりなるプレートであり、上記ジヤケツト１２の
凹面に配され、反射面が構成されている。この反
射面は深さ７cm、幅20cm、長さ140cmの断面形状
が略々放物線の凹面により構成されている。上記
ジヤケツト１２を構成するステンレス板は２mmで
あり、又プレート１５は１mmの厚さである。上記
反射面の中心軸上の高さ４cmのところ、即ち上記
放物線の焦点に相当するところには、600Vの、
導電体断面積100mm2、外径16mmφ、被覆厚２mmの
ポリエチレン被覆電線９を反射体１０の長手方向
に走行させ、該被覆電線より10〜30cm上方から
1MeVの電子線照射器１により電子線を上記被覆
電線９上に照射した。この照射により、被覆電線
９のポリエチレン被覆層は全周に亘り略々均一に
架橋したことが確認できた。尚、反射体１０を除
いた外は上記と同一条件でケーブル９に電子線を
照射した場合には、ケーブル９の裏側はほとんど
架橋していなかつた。 Next, a specific example of the present invention will be described with reference to FIG. In FIG. 9, 1 is an electron beam irradiator, 2 is an irradiation window, 9 is a polyethylene-coated electric wire as an irradiated object, which will be described later, and 10 is a reflector, which have already been described. Stainless steel is used as a structural material for the reflector 10, and a hollow jacket 12 is formed of the stainless steel. 13
14 is an inlet for feeding water for cooling into this jacket 12, and an outlet of the water. A plate 15 made of lead is arranged on the concave surface of the jacket 12 and forms a reflective surface. This reflective surface has a concave surface with a depth of 7 cm, a width of 20 cm, and a length of 140 cm, and its cross section is approximately parabolic. The stainless steel plate constituting the jacket 12 has a thickness of 2 mm, and the plate 15 has a thickness of 1 mm. At a height of 4 cm on the central axis of the reflecting surface, which corresponds to the focal point of the parabola, there is a 600V voltage.
A polyethylene-coated wire 9 with a conductor cross-sectional area of 100 mm 2 , an outer diameter of 16 mmφ, and a coating thickness of 2 mm is run in the longitudinal direction of the reflector 10, and a wire is inserted from 10 to 30 cm above the coated wire.
An electron beam was irradiated onto the covered electric wire 9 using a 1 MeV electron beam irradiator 1 . It was confirmed that by this irradiation, the polyethylene coating layer of the covered electric wire 9 was crosslinked almost uniformly over the entire circumference. Note that when the cable 9 was irradiated with an electron beam under the same conditions as above except for the reflector 10, the back side of the cable 9 was hardly crosslinked.
本発明は叙上のようであり、１台の電子線照射
器を用い、１パスで架橋ポリエチレンケーブル等
の長尺体を照射した場合でも、全周均一に架橋を
行うことができ、又通常の２方向照射方式では困
難とされている、大導電体の600VCVケーブルな
どの被覆を照射架橋することもできるものであ
る。 As described above, the present invention can uniformly crosslink the entire circumference even when a long body such as a crosslinked polyethylene cable is irradiated in one pass using one electron beam irradiator. It is also possible to irradiate and cross-link the coatings of large conductor 600 VCV cables, etc., which is difficult to do with the two-way irradiation method.
第１図、第３図、第４図及び第５図は従来方法
を説明するための構成図、第２図は電線の断面
図、第６図乃至第８図は本発明方法を説明するた
めの実施例の構成図であり、第６図は正面図、第
７図は縦断側面図、第８図は側面図、第９図は本
発明の一具体例を示す縦断側面図である。
１……電子線照射器、９……ケーブル、１０…
…反射体、１１……ビームマスク。
Figures 1, 3, 4 and 5 are configuration diagrams for explaining the conventional method, Figure 2 is a sectional view of an electric wire, and Figures 6 to 8 are for explaining the method of the present invention. FIG. 6 is a front view, FIG. 7 is a longitudinal side view, FIG. 8 is a side view, and FIG. 9 is a longitudinal side view showing a specific example of the present invention. 1...Electron beam irradiator, 9...Cable, 10...
...Reflector, 11...Beam mask.
Claims (1)
子線と反射体により反射された電子線とを照射し
て長尺体の放射線架橋を行う電子線照射方法にお
いて、上記反射体として凹面体を用い、電子線照
射時には上記長尺体を上記凹面反射体の凹面が形
成する半円状の空間内部に位置させることを特徴
とする長尺体の電子線照射方法。1. In an electron beam irradiation method in which the elongated object to be irradiated is irradiated with a direct electron beam from an electron beam irradiator and an electron beam reflected by a reflector to effect radiation crosslinking of the elongated object, the reflector is a concave surface. A method for irradiating an elongated body with an electron beam, characterized in that the elongated body is positioned inside a semicircular space formed by the concave surface of the concave reflector during electron beam irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5311381A JPS57168923A (en) | 1981-04-10 | 1981-04-10 | Electron beam irradiation of long body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5311381A JPS57168923A (en) | 1981-04-10 | 1981-04-10 | Electron beam irradiation of long body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57168923A JPS57168923A (en) | 1982-10-18 |
| JPS6366333B2 true JPS6366333B2 (en) | 1988-12-20 |
Family
ID=12933735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5311381A Granted JPS57168923A (en) | 1981-04-10 | 1981-04-10 | Electron beam irradiation of long body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57168923A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012003089A (en) * | 2010-06-17 | 2012-01-05 | Hoya Corp | Light irradiation device for lens |
| JP6540192B2 (en) * | 2015-04-23 | 2019-07-10 | 日立金属株式会社 | Cable coating crosslinking method and cable coating crosslinking apparatus |
-
1981
- 1981-04-10 JP JP5311381A patent/JPS57168923A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57168923A (en) | 1982-10-18 |
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