JPS6364290A - Equipment for manufacture of el device - Google Patents

Abstract

(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a light emitting device manufacturing apparatus, and particularly to an L element manufacturing apparatus suitable for manufacturing a gL element.

[Conventional technology]

Conventional EL device manufacturing methods include electron beam (EB) evaporation, sputtering, and atomic epitaxy (ALE) (MOCV).
D method) is used. The thin film BL device manufacturing apparatus using these methods takes into consideration the point of measuring the dopant immersion distribution fin-situ in the gL light-emitting layer that is being formed, as described in JP-A No. 60-216495. It wasn't.

Therefore, it currently has a uniform immersion distribution of the luminescent center. Furthermore, it is difficult to create an EL light-emitting element having a concentration distribution of luminescent centers having a complicated structure such as the four-structure structure. The reason for this is 1. For example, when creating ZnSiMn using the EB evaporation method, the main causes include variations in mr of 1 degree in the target material and thermal changes in the target material during evaporation. It is currently impossible to create one, and no solution has been found.

This causes a decrease in the luminous efficiency of yellow light emission at 8(r12°). This is because when 1Mn is locally distributed in high concentration, a kind of association state of Mn is generated, which causes red light to 7i non-emission. This is because the problem is caused by a loss of energy.This point has been improved and h +r+' 7
n () + II r+ 3.1F Kasumi bar bimaru j&/1-hzFI piece-! r'-tL-J-=
It is expected that ,~10cVD method Zn5i
'': When creating V1ngL1n, the vapor pressure of manganese raw material gas, e.g., pentadienyl manganese, is extremely low at room temperature. It is necessary to heat the entire piping system, including the oil, to a high temperature, which can lead to inaccurate readings and increase the likelihood of bumping.

Therefore, it has been difficult to accurately control the □qna degree.

Other film forming methods are currently being used due to similar circumstances.

E to control the concentration and concentration distribution in the film of the luminescent center
No method for manufacturing L elements has been found, and only EL elements with unsatisfactory light emitting performance have been obtained.

[The pinnacle of the invention while trying to solve the problem]

In the above conventional technology, the luminescent film in which the concentration of the luminescent substance in the film is uniformly distributed? No consideration has been given to the manufacturing method of the EL element. Therefore, thermal annealing was performed after film formation to promote thermal diffusion of the luminescent center, thereby improving the uniformity of the concentration in the film and increasing the brightness by a total of 9 degrees. However, the thermal resistance of the material.

For example, the heat 1 resistance of transparent electrode (In, 5n) 02 film is 55
Achieving a uniform distribution with a low 0C and a center of 1 shot was not possible, and a satisfactory radius could not be achieved. In addition, in the conventional technology, the emission center and univariate distribution Kel
I made Structure 2 wait on the scale of several giants.

Creating a light emitting device with so-called super fJ fraction.
Ma.

The control of the lateral force of the light emitting center was poor and there were problems.

Father, in order to solve this problem, heating the element to about 500C will cause the superstructure to expand.

There was a connection problem due to element destruction.

The purpose of this method is to measure A in the depth direction of the luminescent center in the luminescent layer.
It is possible to control the degree distribution with a resolution of up to 50 people.

The present invention is based on zns, Zn, 9e, CaS, 5
It can be applied in cases such as IIS, and one luminescent center can be formed from f1'' materials, including transition metals such as n, f'b, Pr, gu, Sm, Tm, and rare elements. It can be applied to the production of EL devices.

[Means for solving problems]

The above purpose is achieved by irradiating a minute region on the surface of the light emitting layer with a pulsed laser beam of an appropriate wavelength determined by the optical constant of the material of the light emitting layer when forming the nine EL emitting layers. Detect the luminescence attenuation curve, determine the concentration (C) of the luminescence center in the film included as information in the attenuation white line, detect the difference between that value and the target temperature (Col (ΔC = CoCl), and calculate the result. Luminescence center' degree control parameter of EL manufacturing equipment.

For example, this can be achieved by controlling ΔC to a minimum by feeding back to Ifi, temperature rise, vapor pressure, etc. At this time, the controllable resolution in the depth direction is determined by the penetration depth of the laser light into the film, which is determined by the extinction coefficient of the host crystal at the wavelength of the irradiated laser light. For example, if the laser irradiation section manager is set to 42 using the host crystal <znse,
When a 5 nm He-cd laser beam is used, the extinction coefficient ε21s°≧10'cm −', and the father, 42
The bl n extinction coefficient at 5 nm can be ignored for this value, so don't worry! The incident light is about 50 people l/
The light emitted from the region:a of 50 Å or more and which is attenuated to an intensity of 10 is negligible compared to the light emitted by 50 people or less. In addition, when ZnS is used as the host crystal using a rough laser beam, the extinction coefficient is 'X'ag''Ml0L-1, and 308
Since the extinction coefficient of ~f in nm can be ignored for this value, the light incident from the ZnS surface is 1/1 for about 300 people.
It decays to an intensity of 10 li.

Therefore, in the case of Znse matrix, it is possible to estimate the luminescent center concentration distribution within the film with extremely high accuracy and with a resolution of 50 people.
In the case of the S matrix, an EL element controlled with a resolution of 300 people can be manufactured, so a high-efficiency EL element or an EL element having a superstructure can be finally manufactured.

[Effect]

Using the EL element manufacturing apparatus according to the present invention.

When an EL device was manufactured, the temperature of one luminescent substance was uniformly distributed. Father, any structure in the concentration distribution? Since it is possible to manufacture an EL light-emitting layer having the same properties, there is an advantage that an EL element that emits light with high efficiency can be manufactured.

〔Example〕

An embodiment of the present invention will be described below.

Example 1 Correlation between the manganese concentration of ZnS2Mn single crystals with various manganese-concentrated nitrides of 0 to 2Qmoj% and the emission decay lifetime (τ) of manganese upon excitation with ultraviolet pulse light around 3QQnm (
(Fig. 4) is determined in advance, and stored in a device consisting of a computer (Fig. 1-1O) 4 (Fig.
8) Detect the light intensity at two times: (1+) and 400 μ (8) (t2). Emission intensity at that time (I (t+)
, I (t2)) and tl+t2, find the time constant τ' of tc+ using the following formula.

τ'=(t+ t21J!n(I(t+)/I(tz
)) Next, calculate Δt=τ'-τ and then generate a number of positive and negative 5V digital pulses proportional to the value of Δt. At this time, if Δt > 0, a positive voltage pulse was generated at Δt (if Q, a negative voltage pulse was generated. Also, the maximum 1Δtl = 2 mse
c and the number of pulses at that time was 200. Next, an appropriate voltage proportional to this pulse mi K? Occur. The needle pulp (18) opening/closing pulse motor is operated by the driving circuit 11, and if the voltage is a positive voltage generated by a positive digital pulse, the needle pulp is moved in the opening direction, and if the voltage is the opposite, it is moved in the negative direction at a constant rate. It was rotated to increase or decrease the gas flow rate. The time required for this feedback was approximately 2 seconds. Reactor 4 pressure 0.6'rorr.

The sample substrate was 5400C, and diethyl zinc (DEZI hydrogen sulfide (f(z S
) and carbonylmethylcyclopentadienylmanganese and L'CM)' were introduced at a flow rate of 1:0° to 2:1 to form a ZnS:Mn film. Since the film growth rate at this time was 2000 A/min, the thickness of the film formed during the time from photometry to control of about 2 seconds was obtained by 70 people, and a sufficiently fast response was obtained.

Figure 2 shows the distribution of the concentration in the film thickness direction of the manganese film prepared using the apparatus according to the present invention using an ion microanalyzer (
The results are shown below. Figure 2 (Al
A significant improvement was achieved compared to (Fig. 2-(B)).

Example 2 Two types of light-emitting layer films, one according to the present invention and one not according to the present invention, were formed on the same insulating film using the same method as in Example 1 to produce an AC-driven EL element. When the device was driven with an alternating current rectangular wave of 5 KHz, drive voltage of 220 V, and duty of 1/10, the EL device produced by the manufacturing apparatus based on the present invention showed a luminous efficiency of about 1.5 times.

Example 3 ZnSe and (Zn,Mn)Se were used as target materials by a two-gun electron beam evaporation method including a photoluminescence measurement and control system according to the present invention.

A Zn5e20-ZnSe:Mn21 superstructure film was fabricated on the substrate 19. At this time, the thickness of the Zn8e:Mn layer could be controlled at 50 degrees (FIG. 5).

〔Effect of the invention〕

According to the present invention, it is possible to fabricate a gL device consisting of a luminescent layer in which the concentration distribution of a luminescent substance is accurately controlled, so that it is possible to fabricate an EL device with good luminescent performance.

[Brief explanation of drawings]

is1 is a vertical cross-sectional view of a device according to an embodiment of the present invention, showing the east side, FIG. 4 is a diagram showing the correlation between concentration in a film and luminescence lifetime, and FIG. 5 is a vertical cross-section of a device according to an embodiment of the present invention. It is a diagram. DESCRIPTION OF SYMBOLS 1... Laser light source, 2... Mirror, 3... Laser beam incidence quartz window, 4... Reaction tank, 5... Sample substrate,
6... Exhaust pipe, 7... Support stand including heater, 8
... Light emission, 9 ... Quartz fiber, 10 ... Control system including computer, 11 ... Pulp drive device,
12... Heating device. 13... Raw material cylinder, 14... Gas piping, 15...
・Heater, 16... Constant temperature chamber, 17... Flow meter, 1
8... Openable pulp, 19... Substrate including electrode and insulating film, 20... Zn5ejfj, 21-.Zn5e:
Mn layer. 72. To, agent patent attorney Katsuo Ogawa;
Mh (xji inferior 3 figure time open (?7'L illusion ■ 4 concave ρρl ρl /ρ 78 month 1?r ii 6 A7i (7nJ/ d) Fuji 5 figure ZI Zn5e print shi

Claims (1)

[Claims] 1. An apparatus for forming a light-emitting layer consisting of a light-emitting center exhibiting unique light emission, comprising: means for irradiating the light-emitting layer with pulsed light of a specific wavelength; and means for detecting an attenuation curve of light emitted by the irradiation with the pulsed light. An EL device manufacturing apparatus comprising means for calculating the difference between the target concentration and the measured concentration of the light emitting layer from the detected value and feeding the result back to the device manufacturing apparatus.