JPS6356933B2 - - Google Patents
Info
- Publication number
- JPS6356933B2 JPS6356933B2 JP56155166A JP15516681A JPS6356933B2 JP S6356933 B2 JPS6356933 B2 JP S6356933B2 JP 56155166 A JP56155166 A JP 56155166A JP 15516681 A JP15516681 A JP 15516681A JP S6356933 B2 JPS6356933 B2 JP S6356933B2
- Authority
- JP
- Japan
- Prior art keywords
- compensation
- resistors
- gauge
- bridge circuit
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000035945 sensitivity Effects 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15516681A JPS5856477A (ja) | 1981-09-30 | 1981-09-30 | 半導体圧力変換器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15516681A JPS5856477A (ja) | 1981-09-30 | 1981-09-30 | 半導体圧力変換器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5856477A JPS5856477A (ja) | 1983-04-04 |
JPS6356933B2 true JPS6356933B2 (de) | 1988-11-09 |
Family
ID=15599948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15516681A Granted JPS5856477A (ja) | 1981-09-30 | 1981-09-30 | 半導体圧力変換器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856477A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006200940A (ja) * | 2005-01-18 | 2006-08-03 | Japan Atom Power Co Ltd:The | 歪み測定センサ及び弁開閉検出用センサ |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5895170B2 (ja) | 2010-02-23 | 2016-03-30 | パナソニックIpマネジメント株式会社 | 2線式交流スイッチ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140984A (de) * | 1974-08-01 | 1976-04-06 | Instrumentation Labor Inc | |
JPS55163880A (en) * | 1979-06-07 | 1980-12-20 | Hitachi Ltd | Semiconductor strain gauge bridge circuit |
-
1981
- 1981-09-30 JP JP15516681A patent/JPS5856477A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140984A (de) * | 1974-08-01 | 1976-04-06 | Instrumentation Labor Inc | |
JPS55163880A (en) * | 1979-06-07 | 1980-12-20 | Hitachi Ltd | Semiconductor strain gauge bridge circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006200940A (ja) * | 2005-01-18 | 2006-08-03 | Japan Atom Power Co Ltd:The | 歪み測定センサ及び弁開閉検出用センサ |
Also Published As
Publication number | Publication date |
---|---|
JPS5856477A (ja) | 1983-04-04 |
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