JPS6355878B2 - - Google Patents

Info

Publication number
JPS6355878B2
JPS6355878B2 JP14389783A JP14389783A JPS6355878B2 JP S6355878 B2 JPS6355878 B2 JP S6355878B2 JP 14389783 A JP14389783 A JP 14389783A JP 14389783 A JP14389783 A JP 14389783A JP S6355878 B2 JPS6355878 B2 JP S6355878B2
Authority
JP
Japan
Prior art keywords
type region
active layer
region
control electrode
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14389783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6035590A (ja
Inventor
Takao Uchiumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58143897A priority Critical patent/JPS6035590A/ja
Publication of JPS6035590A publication Critical patent/JPS6035590A/ja
Publication of JPS6355878B2 publication Critical patent/JPS6355878B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP58143897A 1983-08-08 1983-08-08 プレ−ナ型半導体発光装置 Granted JPS6035590A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58143897A JPS6035590A (ja) 1983-08-08 1983-08-08 プレ−ナ型半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58143897A JPS6035590A (ja) 1983-08-08 1983-08-08 プレ−ナ型半導体発光装置

Publications (2)

Publication Number Publication Date
JPS6035590A JPS6035590A (ja) 1985-02-23
JPS6355878B2 true JPS6355878B2 (enExample) 1988-11-04

Family

ID=15349595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58143897A Granted JPS6035590A (ja) 1983-08-08 1983-08-08 プレ−ナ型半導体発光装置

Country Status (1)

Country Link
JP (1) JPS6035590A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220020896A (ko) * 2019-06-13 2022-02-21 버브 서지컬 인크. 비교 학습을 위한 시술 비디오들을 동기화하기 위한 방법 및 시스템

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646666B2 (ja) * 1985-01-08 1994-06-15 キヤノン株式会社 半導体レ−ザ装置
JP2001226215A (ja) * 1999-12-10 2001-08-21 Kanebo Ltd 化粧料およびラフィノースのエ−テル誘導体の製造方法
JP5280639B2 (ja) * 2007-03-28 2013-09-04 富士通株式会社 半導体光学素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220020896A (ko) * 2019-06-13 2022-02-21 버브 서지컬 인크. 비교 학습을 위한 시술 비디오들을 동기화하기 위한 방법 및 시스템

Also Published As

Publication number Publication date
JPS6035590A (ja) 1985-02-23

Similar Documents

Publication Publication Date Title
US4845725A (en) Window laser with high power reduced divergence output
JPH0750448A (ja) 半導体レーザおよびその製造方法
JPH11330605A (ja) 半導体レーザ
US5311534A (en) Semiconductor laser devices
JPH0143472B2 (enExample)
KR100232993B1 (ko) 반도체 레이저장치 및 그 제조방법
US6961358B2 (en) Semiconductor laser
JPH06302908A (ja) 半導体レーザ
JP7145936B2 (ja) 半導体レーザおよびその製造方法
JP2003142774A (ja) 半導体レーザ装置及びその製造方法
US4759025A (en) Window structure semiconductor laser
US4456999A (en) Terrace-shaped substrate semiconductor laser
JPS6035590A (ja) プレ−ナ型半導体発光装置
US5022037A (en) Semiconductor laser device
US4517674A (en) Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser
US6671301B1 (en) Semiconductor device and method for producing the same
JP2679974B2 (ja) 半導体レーザ装置
JP3801410B2 (ja) 半導体レーザ素子及びその製造方法
JPS607789A (ja) プレ−ナ型半導体発光装置
JPH0634429B2 (ja) 半導体レーザの形成のためにＧａＡｓを選択的に成長させる方法及び半導体レーザ
JPH03104292A (ja) 半導体レーザ
JP3612900B2 (ja) 面発光半導体レーザ及びその製造方法
KR900000021B1 (ko) 반도체 레이저
JPH05160509A (ja) 量子井戸構造埋め込み半導体レーザ
JPH0728093B2 (ja) 半導体レ−ザ素子