JPS6353619B2 - - Google Patents
Info
- Publication number
- JPS6353619B2 JPS6353619B2 JP8336580A JP8336580A JPS6353619B2 JP S6353619 B2 JPS6353619 B2 JP S6353619B2 JP 8336580 A JP8336580 A JP 8336580A JP 8336580 A JP8336580 A JP 8336580A JP S6353619 B2 JPS6353619 B2 JP S6353619B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic thin
- analyzer
- polarizer
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000028161 membrane depolarization Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
Description
【発明の詳細な説明】
本発明は、光を用いて情報の記録、再生、消去
を行ない得る磁気光学記憶素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magneto-optical storage element that can record, reproduce, and erase information using light.
近年、HeNeレーザ、Arレーザ、半導体レー
ザ等の光を用いて、光学的に情報を記録、再生、
消去する方式、即ち磁気光学記録方式が注目さ
れ、産業界等において重点的に研究開発が推進さ
れるに至つた。 In recent years, information has been optically recorded, reproduced, and recorded using light such as HeNe lasers, Ar lasers, and semiconductor lasers.
The erasing method, that is, the magneto-optical recording method, has attracted attention, and research and development has been intensively promoted in industry.
この方式を磁気デイスク、磁気ドラム、磁気テ
ープ等の装置に利用した場合、記録ヘツド或は再
生ヘツドである集光レンズの先端と記録媒体との
間に約0.5〜1mmの間隙を設けることが可能であ
るため、記録媒体と集光レンズとの間に透明な保
護板を設けることにより、記録媒体に直接塵埃が
付着することを確実に防止でき、従来の磁気ヘツ
ドを用いた記録方式と比較して塵埃の影響を少な
くすることができるという利点がある。 When this method is used in devices such as magnetic disks, magnetic drums, and magnetic tapes, it is possible to create a gap of about 0.5 to 1 mm between the recording medium and the tip of the condenser lens, which is the recording head or reproduction head. Therefore, by providing a transparent protective plate between the recording medium and the condensing lens, it is possible to reliably prevent dust from directly adhering to the recording medium, and compared to the conventional recording method using a magnetic head. This has the advantage that the influence of dust can be reduced.
また、透明な保護板の厚みを適宜変化させるこ
とにより、集光レンズと記憶素子との接触を確実
に防止でき、従来方式では除去し得なかつたヘツ
ドクラツシユを完全に防止できるという利点があ
る。 Further, by appropriately changing the thickness of the transparent protective plate, it is possible to reliably prevent contact between the condensing lens and the memory element, and there is an advantage that head crushing, which could not be removed with conventional methods, can be completely prevented.
更には、この方式によれば例えば再生信号が読
み出し光量に比例するので記録ビツト径を光波長
程度(約1μm以下)に極小化し得ることとなる
為、再生信号が記録ビツトの大きさに比例してい
た従来方式と比較して非常に高密度化し得るとい
う利点もある。 Furthermore, according to this method, for example, since the reproduction signal is proportional to the amount of read light, the diameter of the recording bit can be minimized to about the wavelength of light (approximately 1 μm or less), so the reproduction signal is proportional to the size of the recording bit. It also has the advantage of being able to achieve much higher density than conventional methods.
以上のように多くの利点を有する磁気光学記録
方式を実施する場合に、従来は第1図に示すよう
な装置を用いていた。 Conventionally, when implementing the magneto-optical recording method which has many advantages as described above, an apparatus as shown in FIG. 1 has been used.
第1図は磁性薄膜に記録された情報を再生する
場合の例であり、レーザ光源8から出たレーザ光
6′が偏光子1′を通過した後、集光レンズ4′、
磁性薄膜2′、コリメータレンズ5′及び検光子
3′をこの順に通過し、光検出器7′に入射し、該
入射光にて情報の再生を行なう。 FIG. 1 shows an example of reproducing information recorded on a magnetic thin film. After a laser beam 6' emitted from a laser light source 8 passes through a polarizer 1', a condensing lens 4',
The light passes through a magnetic thin film 2', a collimator lens 5', and an analyzer 3' in this order, enters a photodetector 7', and reproduces information using the incident light.
しかし、このようにすると、集光レンズ4′及
びコリメータレンズ5′による偏光解消をひきお
こすのでS/N比を余り高くすることができない
という欠点がある。 However, this method has the disadvantage that the S/N ratio cannot be made very high because the condensing lens 4' and the collimator lens 5' cause depolarization.
本発明は、偏光子と磁性薄膜と検光子とを一体
化して集光レンズとコリメータレンズとの間に配
置することにより、上記の欠点を解消するととも
に光学系の簡素化を可能としたものであり、以下
実施例を示す添付図面によつて詳細に説明する。 The present invention solves the above-mentioned drawbacks and simplifies the optical system by integrating a polarizer, a magnetic thin film, and an analyzer and placing them between a condenser lens and a collimator lens. Embodiments will be described in detail below with reference to the accompanying drawings showing examples.
第3図は円板状に形成された磁気光学記憶素子
の側面図であり、偏光子1としての偏光円板の下
面に磁性薄膜2を、真空蒸着法、スパツタリング
法、イオンプレーテイング法等にて形成し、更に
該磁性薄膜2の下面に、紫外線硬化剤等の接着剤
9にて、検光子3としての偏光円板を貼着して成
る。 FIG. 3 is a side view of a magneto-optical memory element formed in the shape of a disc, in which a magnetic thin film 2 is deposited on the lower surface of a polarizing disc as a polarizer 1 using a vacuum evaporation method, sputtering method, ion plating method, etc. Further, a polarizing disk as an analyzer 3 is attached to the lower surface of the magnetic thin film 2 with an adhesive 9 such as an ultraviolet curing agent.
尚、前記偏光円板は、ダイクローム、ポラロイ
ドH,K,L等の高分子板で構成され、前記磁性
薄膜2はGd,Tb,Dy,Ho,Sm,Er,Eu等重
希土類と鉄、コバルト、ニツケル等遷移金属とを
種々の組成比で混合して形成されるアモルフアス
フエリ磁性体、MuBi,EuO,MuBiCu等結晶質
磁性体等、膜面に垂直な磁化容易軸を有する薄膜
にて構成され、更に前記接着剤9は、フオートボ
ンド、ロツクタイト等が使用される。 The polarizing disk is composed of a polymer plate such as dichrome, Polaroid H, K, L, etc., and the magnetic thin film 2 is composed of heavy rare earths such as Gd, Tb, Dy, Ho, Sm, Er, Eu, iron, Amorphous ferrimagnetic materials formed by mixing transition metals such as cobalt and nickel in various composition ratios, and crystalline magnetic materials such as MuBi, EuO, and MuBiCu, are thin films with an axis of easy magnetization perpendicular to the film surface. Further, as the adhesive 9, photobond, Loctite, etc. are used.
また、前記偏光円板は、互にその透過軸が、磁
性薄膜2のフアラデイ角をΘFとすれば、90±ΘF
の何れかの角度となるように位置決めされる。 Further, the transmission axes of the polarizing disks are 90±ΘF, assuming that the Faraday angle of the magnetic thin film 2 is ΘF.
It is positioned so that it is at either of the following angles.
第2図は、第3図の構成になる磁気光学記憶素
子の磁性薄膜2に記録された情報を再生する装置
であり、レーザ光源8から出たレーザ光6が集光
レンズ4を通過した後、偏光子1、磁性薄膜2及
び検光子3を一体化した磁気光学記憶素子を通過
し、更にコリメータレンズ5を通過して光検出器
7に入射するようにしている。 FIG. 2 shows a device for reproducing information recorded on the magnetic thin film 2 of the magneto-optical storage element having the configuration shown in FIG. , passes through a magneto-optical memory element that integrates a polarizer 1, a magnetic thin film 2, and an analyzer 3, further passes through a collimator lens 5, and enters a photodetector 7.
従つて、集光レンズ4及びコリメータレンズ5
による偏光解消を確実に除去でき、高いS/N比
を得ることが可能となる。 Therefore, the condenser lens 4 and the collimator lens 5
It is possible to reliably eliminate the depolarization caused by this, and it is possible to obtain a high S/N ratio.
更には、偏光子1と検光子3とを磁性薄膜2と
一体化したので、光学系を簡素化することも可能
となる。 Furthermore, since the polarizer 1 and analyzer 3 are integrated with the magnetic thin film 2, it is also possible to simplify the optical system.
第4図は、機械的可動部分を全く有していない
ビツトバイビツトの再生装置に応用した実施例を
示し、レーザ光源8から出たレーザ光6を2次元
偏光器11にて位置決めし、集光レンズ4を通過
させた後、磁気光学記憶素子を通過させ、更に集
束レンズ12を通して光検出器7に入射させるよ
うにしている。 FIG. 4 shows an embodiment applied to a bit-by-bit reproducing device having no mechanically movable parts, in which a laser beam 6 emitted from a laser light source 8 is positioned by a two-dimensional polarizer 11, and a condensing lens 4, the light passes through a magneto-optical storage element, and further passes through a focusing lens 12 and enters a photodetector 7.
尚、第4図に示す磁気光学記憶素子は第3図々
示のものと構成が異なり、ガラス、プラスチツク
ス等製の透明基板10の一側面に磁性薄膜2を形
成し、該磁性薄膜2の側に接着剤9にて偏光子1
を貼着するとともに、他側に接着剤9にて検光子
3を貼着している。 The magneto-optical memory element shown in FIG. 4 has a different structure from that shown in FIG. 3, in that a magnetic thin film 2 is formed on one side of a transparent substrate 10 made of glass, plastic, etc. Polarizer 1 with adhesive 9 on the side
At the same time, the analyzer 3 is attached to the other side with an adhesive 9.
従つて、透明基板10が補強の役割を果たし、
第3図々示のものより強度が向上する。 Therefore, the transparent substrate 10 plays a reinforcing role,
The strength is improved compared to that shown in Figure 3.
磁気光学記憶素子の構成は第3図、第4図々示
のものに限定されず、例えば偏光子1、検光子3
の外側面に透明板を貼着しても良く、更には磁性
薄膜2の表面に誘電体薄膜を形成しても良い。 The configuration of the magneto-optical memory element is not limited to that shown in FIGS. 3 and 4, and includes, for example, a polarizer 1 and an analyzer 3.
A transparent plate may be attached to the outer surface of the magnetic thin film 2, or a dielectric thin film may be formed on the surface of the magnetic thin film 2.
また、偏光子1と検光子3の透過軸が90゜±ΘF
となるよう位置決めすることのみには限定され
ず、S/N比が最大となる角度に設定することも
可能である。 Also, the transmission axes of polarizer 1 and analyzer 3 are 90°±ΘF.
It is not limited to positioning so that the angle becomes the maximum, but it is also possible to set the angle at which the S/N ratio is maximized.
更には、磁性薄膜2と偏光子1又は検光子3と
の間に位相板を挾持し、検光子3に入る偏光状態
を変化させてS/N比を改善することもできる。 Furthermore, the S/N ratio can be improved by interposing a phase plate between the magnetic thin film 2 and the polarizer 1 or the analyzer 3 to change the polarization state entering the analyzer 3.
以上のように、本発明は偏光子1、磁性薄膜2
及び検光子3を一体化したことにより、S/N比
を著しく改善し、更には光学系を簡素化し得る等
特有の効果を奏する。 As described above, the present invention includes a polarizer 1, a magnetic thin film 2,
By integrating the analyzer 3 and the analyzer 3, unique effects such as significantly improving the S/N ratio and simplifying the optical system can be achieved.
第1図は、従来の磁気光学再生装置の簡略化側
面図、第2図は、本発明の一実施例を示す磁気光
学記憶素子を用いた再生装置の簡略化側面図、第
3図は、本発明の一実施例を示す円板状に形成し
た磁気光学記憶素子の側面図、第4図は本発明の
一実施例を示す磁気光学記憶素子を、可動部分の
ないビツトバイビツト再生装置に応用した簡略化
側面図。
1……偏光子、2……磁性薄膜、3……検光
子、9……接着剤。
FIG. 1 is a simplified side view of a conventional magneto-optical reproducing device, FIG. 2 is a simplified side view of a reproducing device using a magneto-optic storage element showing an embodiment of the present invention, and FIG. FIG. 4 is a side view of a disk-shaped magneto-optical memory element showing an embodiment of the present invention, and FIG. Simplified side view. 1...Polarizer, 2...Magnetic thin film, 3...Analyzer, 9...Adhesive.
Claims (1)
子、磁性薄膜及び検光子を一体化したことを特徴
とする磁気光学記憶素子。1. A magneto-optical memory element characterized in that a magnetic thin film is sandwiched between two polarizing plates, and a polarizer, a magnetic thin film, and an analyzer are integrated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8336580A JPS578992A (en) | 1980-06-18 | 1980-06-18 | Magnetooptical storage element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8336580A JPS578992A (en) | 1980-06-18 | 1980-06-18 | Magnetooptical storage element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS578992A JPS578992A (en) | 1982-01-18 |
JPS6353619B2 true JPS6353619B2 (en) | 1988-10-25 |
Family
ID=13800393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8336580A Granted JPS578992A (en) | 1980-06-18 | 1980-06-18 | Magnetooptical storage element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS578992A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020179201A1 (en) * | 2019-03-04 | 2020-09-10 | 豊富産業株式会社 | Multiuse dismantling machine |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0129605A4 (en) * | 1982-12-23 | 1987-01-22 | Sony Corp | Thermomagnetic optical recording method. |
-
1980
- 1980-06-18 JP JP8336580A patent/JPS578992A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020179201A1 (en) * | 2019-03-04 | 2020-09-10 | 豊富産業株式会社 | Multiuse dismantling machine |
Also Published As
Publication number | Publication date |
---|---|
JPS578992A (en) | 1982-01-18 |
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