JPS6351682A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS6351682A JPS6351682A JP61195811A JP19581186A JPS6351682A JP S6351682 A JPS6351682 A JP S6351682A JP 61195811 A JP61195811 A JP 61195811A JP 19581186 A JP19581186 A JP 19581186A JP S6351682 A JPS6351682 A JP S6351682A
- Authority
- JP
- Japan
- Prior art keywords
- light
- insulating substrate
- transparent insulating
- photoelectric conversion
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000010292 electrical insulation Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000005304 optical glass Substances 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔技術分野〕 この発明は、光電変換装置に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a photoelectric conversion device.
（背景技術〕
光により信号を遺り取りする装置として、たとえば、第
２図に示した回路構成のものが用いられている。(Background Art) For example, a device having a circuit configuration shown in FIG. 2 is used as a device for receiving signals using light.
このものは、受光素子である複数の光電変換素子り、・
・・からなる光電変換素子アレイＤＡ＋と、これに近接
して設けられた発光素子り、より成り、発光素子Ｌ１に
信号が入力されてこの発光素子Ｌｌが発光すると、その
光によって前記光電変換素子アレイＤ Ａ ＋の両端、
すなわち、出力端子２．２に電気信号が発生するもので
ある。This device has multiple photoelectric conversion elements that are light receiving elements,
It consists of a photoelectric conversion element array DA+ consisting of a photoelectric conversion element array DA+, and a light emitting element provided close to this, and when a signal is input to the light emitting element L1 and the light emitting element Ll emits light, the light causes the photoelectric conversion element to Both ends of array D A +,
That is, an electrical signal is generated at the output terminal 2.2.
従来、このような光電変換装置では、第３図に示す如く
、半導体基板２０上に光電変換素子アレイＤＡ＋が形成
され、この光電変換素子アレイＤＡ、に対向して発光素
子り、−ｈ＜設けられて、その間に介在する透明な樹脂
等を介して光の伝達が行われている。Conventionally, in such a photoelectric conversion device, a photoelectric conversion element array DA+ is formed on a semiconductor substrate 20, as shown in FIG. light is transmitted through a transparent resin or the like interposed between the two.
ところが、このような構造では、
■ 発光素子り、と、光電変換素子アレイＤＡ、とを平
行に保ちながら、再現よく還路、Ｔ６Ｊ （１＊＊以下
）に設置することが非常に困難である、■ 発光素子Ｌ
＋ と光電変換素子アレイＤＡ＋とをあまり接近させる
と、充分な電気的＆Ｑ縁性が得られなくなる、
■ 透明樹脂を介して光の伝達を行う場合には、第４図
に示す如く、発光素子ＬＩ、光電変換素子アレイＤ Ａ
＋ の両素子を透明用、指３で封止するため、発光素
子り、の光がそれによって発散し、光電変換素子アレイ
Ｄ Ａ ＋以外にも照射されて効率が悪（なる。そこで
、これを防ぐために透明樹脂３の外側をペイント４等で
塗り潰し、光の閉じ込めを行う必要がある、
等の問題がある。However, with such a structure, it is extremely difficult to maintain the light emitting elements and the photoelectric conversion element array DA in parallel and to reproducibly install them in the return path, T6J (1** or less). ,■ Light emitting element L
If the photoelectric conversion element array DA+ is brought too close to the photoelectric conversion element array DA+, sufficient electrical &Q relationship cannot be obtained. ■ When transmitting light through a transparent resin, as shown in FIG. LI, photoelectric conversion element array D A
Since both elements of + are sealed with a transparent finger 3, the light from the light emitting element RI diverges and is irradiated to areas other than the photoelectric conversion element array DA +, resulting in poor efficiency. In order to prevent this, it is necessary to cover the outside of the transparent resin 3 with paint 4 or the like to confine light.
この発明は、以上の問題に鑑みてなされたものであって
、発光素子と受光素子とを再現よく、平行を保ちながら
接近させ、かつ良好な電気的絶縁性が得られ、光発散に
よる発光、受光ロスのない光電変換装置を提供すること
を目的としている。This invention was made in view of the above problems, and it is possible to bring a light emitting element and a light receiving element close to each other while maintaining parallelism with good reproducibility, to obtain good electrical insulation, and to achieve light emission due to light divergence. The purpose of the present invention is to provide a photoelectric conversion device with no light reception loss.
以上の目的を達成するため、この発明は、透明絶縁基板
と、透明絶縁基板の第１次側に接触させた発光素子と、
透明絶縁基板の第２次側に接触させた受光素子とを備え
、前記透明絶縁基板が、前記両素子の支持と、電気的絶
縁と、光伝達とを行うようになっていることを特徴とす
る光電変換装置を要旨としている。In order to achieve the above object, the present invention includes a transparent insulating substrate, a light emitting element brought into contact with the primary side of the transparent insulating substrate,
A light receiving element is provided in contact with a secondary side of a transparent insulating substrate, and the transparent insulating substrate supports, electrically insulates, and transmits light to both of the elements. The main subject of this paper is a photoelectric conversion device.
以下に、この発明を、その一実施例をあられす図面を参
照しつつ、詳しく説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings.
この実施例の光電変換装置では、第１図にみるように、
透明絶縁基板１の片方（第１次側）の表面に発光素子Ｌ
１が接着等の方法で設けられている。また、前記透明絶
縁基板１の、前記発光素子り、が設けられた側とは反対
側（第２次側）の表面には、受光素子である、光を電気
信号に変換する複数の光電変換素子り、からなる光電変
換素子アレイＤＡ、が形成されている。In the photoelectric conversion device of this embodiment, as shown in FIG.
A light emitting element L is provided on the surface of one side (primary side) of the transparent insulating substrate 1.
1 is provided by a method such as adhesion. Further, on the surface of the transparent insulating substrate 1 on the opposite side (secondary side) to the side on which the light emitting elements are provided, a plurality of photoelectric converters, which are light receiving elements, convert light into electrical signals. A photoelectric conversion element array DA is formed.
このような、この実施例の光電変換装置では、前記発光
素子り、に信号を入力して、この発光素子り、を発光さ
せると、その光が、透明絶縁基板１によって伝達（ガイ
ド）されて、光電変換素子アレイＤ Ａ ＋に到達し、
この光電変換素子アレイＤＡ＋が電気信号を発生する。In the photoelectric conversion device of this embodiment, when a signal is input to the light emitting element to cause the light emitting element to emit light, the light is transmitted (guided) by the transparent insulating substrate 1. , reaches the photoelectric conversion element array D A +,
This photoelectric conversion element array DA+ generates an electrical signal.
発生した電気信号は、出力端子２．２から、図中−点鎖
線で示したように外部に導かれる。The generated electrical signal is led to the outside from the output terminal 2.2 as shown by the dashed line in the figure.
なお、この実施例では、図にみるように、光電変換素子
アレイＤＡ、からの電気信号を受けて作動する回路を構
成する各素子ＲＡ、、ＲＡ、、Ｔ、等も、この光電変換
素子アレイＤＡ、と同じ側の透明絶縁基板１表面に形成
されている。このようにすれば、光電変換素子アレイＤ
Ａ Ｉ と、この光電変換素子アレイＤＡ＋からの電
気信号を受けて作動する各素子との電気的接続を容易に
行えるようになるからである。In this embodiment, as shown in the figure, each element RA, RA, , T, etc. that constitutes a circuit that operates in response to an electric signal from the photoelectric conversion element array DA is also connected to this photoelectric conversion element array. It is formed on the surface of the transparent insulating substrate 1 on the same side as DA. In this way, the photoelectric conversion element array D
This is because electrical connection between A I and each element that operates in response to an electrical signal from the photoelectric conversion element array DA+ can be easily established.
以上のことから明らかなように、この発明の装置におい
ては、発光素子り、と光電変換素子アレイＤＡ、等の受
光素子との間の位置関係および距離は透明絶縁基板１の
表裏両面の平行度と厚みで定まるようになっているが、
その表裏両面の平行度を正確にし、かつ、厚みを薄くす
ることは、このような板状の透明絶縁基板１では極めて
容易であるから、一定の厚みを有した透明絶縁基板１の
表裏両面に、前記発光素子り、と受光素子Ｄ Ａ ＋等
とを形成する等して単に接触させるだけで、再現よく、
平行を保ちながら、この両者を接近させることが可能と
なる。透明絶縁基板１としては、高精度の光学ガラス等
を使用することができるため、従来の封止用透明樹脂に
比べて、電気的絶縁性や光学特性等に優れたちの得るこ
とができるようになり、光発散による発光、受光ロスの
ない光電変換装置を得ることができるようになる。また
、発光素子Ｌ１と光電変換素子アレイＤＡ、等の受光素
子とは、上述したように、電気的絶縁性に優れた透明絶
縁基板１の表裏両面に別々に接触させるようになってい
るため、電気的に完全に絶縁させることも可能となる。As is clear from the above, in the device of the present invention, the positional relationship and distance between the light emitting elements and the light receiving elements such as the photoelectric conversion element array DA are determined by the parallelism of both the front and back surfaces of the transparent insulating substrate 1. It is determined by the thickness,
It is extremely easy to make the parallelism of both the front and back surfaces accurate and to reduce the thickness with such a plate-shaped transparent insulating substrate 1. , simply by forming the light-emitting element and the light-receiving element D A + etc. and bringing them into contact with each other, it is possible to easily reproduce the
It is possible to bring the two closer together while maintaining parallelism. High-precision optical glass or the like can be used as the transparent insulating substrate 1, so it can provide superior electrical insulation, optical properties, etc. compared to conventional transparent sealing resins. Therefore, it becomes possible to obtain a photoelectric conversion device without light emission or light reception loss due to light divergence. Furthermore, as described above, the light emitting element L1 and the light receiving elements such as the photoelectric conversion element array DA are brought into contact with both the front and back surfaces of the transparent insulating substrate 1, which has excellent electrical insulation. Complete electrical insulation is also possible.
なお、これまでは、この発明の光電変換装置について、
以上の実施例にもとづいてのみ、説明してきたが、この
発明は、以上の図の実施例に限定されるものではない。Note that, up to now, regarding the photoelectric conversion device of this invention,
Although the invention has been described only based on the above embodiments, the present invention is not limited to the embodiments shown in the figures above.
たとえば、以上の実施例では、受光素子として、複数の
光電変換素子Ｄ１・・・からなる光電変換素子アレイＤ
Ａ、が使用されていたが、これは、単独の素子であって
もよい。このような受光素子の種類は、この発明では特
に限定されず、光によって電圧を発生する光起電力素子
や、光によって導電性が変化する光導電素子等、光によ
って何らかの電気信号を発生するあらゆる種類のものを
用いることができる。また、このような受光素子や発光
素子を構成する材料も、この発明では特に限定されず、
アモルファスシリコン薄膜、再結晶化Ｓｉ薄膜、等のシ
リコン系や、ＣｄＳ等の化合物半導体薄膜等、通常、こ
の用途に用いられる材料で形成すればよい。以上のこと
は、発光素子についても同様であって、発光素子として
は、ＬＥＤの他に、半導体レーザ等を使用することもで
きる。つまり、受光素子を作動させることができる波長
を発生できるものであれば、発光素子の種類は特に限定
されないのである。For example, in the above embodiment, as a light receiving element, a photoelectric conversion element array D consisting of a plurality of photoelectric conversion elements D1...
A, was used, but this could also be a single element. The type of such light-receiving element is not particularly limited in the present invention, and any type of light-receiving element that generates some kind of electrical signal by light, such as a photovoltaic element that generates a voltage by light or a photoconductive element whose conductivity changes by light, can be used. Various types can be used. Furthermore, the materials constituting such light receiving elements and light emitting elements are not particularly limited in the present invention.
It may be formed of a material normally used for this purpose, such as a silicon-based thin film such as an amorphous silicon thin film or a recrystallized Si thin film, or a compound semiconductor thin film such as CdS. The above also applies to light emitting elements, and in addition to LEDs, semiconductor lasers and the like can also be used as light emitting elements. In other words, the type of light emitting element is not particularly limited as long as it can generate a wavelength that allows the light receiving element to operate.
さらに言えば、上記発光素子や受光素子は、透明絶縁基
板の表面に形成されていなくてもよい。Furthermore, the light emitting element and the light receiving element do not need to be formed on the surface of the transparent insulating substrate.
その場合には、これらの素子を、透明絶縁基板とは別の
半導体基板等の基板表面に形成しておいて、その基板を
、その表面に形成された素子が透明絶縁基板と接触する
ように重ね合わせ、固定すればよい。In that case, these elements are formed on the surface of a substrate such as a semiconductor substrate that is different from the transparent insulating substrate, and the substrate is moved so that the elements formed on the surface are in contact with the transparent insulating substrate. Just overlap and fix.
要するに、透明絶縁基板と、透明絶縁基板の第１次側に
接触させた発光素子と、透明絶縁基板の第２次側に接触
させた受光素子とを備え、前記透明絶縁基板が、前記両
素子の支持と、電気的絶縁と、光伝達とを行うようにな
っているのであれば、その他の構成は特に限定されない
のである。In short, it includes a transparent insulating substrate, a light emitting element in contact with the primary side of the transparent insulating substrate, and a light receiving element in contact with the secondary side of the transparent insulating substrate, and the transparent insulating substrate Other configurations are not particularly limited as long as they support, electrically insulate, and transmit light.
この発明の光電変換装置は、以上のようであり、透明絶
縁基板と、透明絶縁基板の第１次側に接触させた発光素
子と、透明絶縁基板の第２次側に接触させた受光素子と
を備え、前記透明絶縁基板が、前記両素子の支持と、電
気的絶縁と、光伝達とを行うようになっているため、発
光素子と受光素子とを再現よく、平行を保ちながら接近
させ、かつ良好な電気的絶縁性が得られ、光発散による
発光、受光ロスのない路を構成することができるように
なっている。The photoelectric conversion device of the present invention is as described above, and includes a transparent insulating substrate, a light emitting element in contact with the primary side of the transparent insulating substrate, and a light receiving element in contact with the secondary side of the transparent insulating substrate. The transparent insulating substrate supports, electrically insulates, and transmits light to both the elements, so that the light-emitting element and the light-receiving element are brought close to each other while maintaining parallelism with good reproducibility; In addition, good electrical insulation can be obtained, and a path can be constructed without light emission or light reception loss due to light divergence.
第１図はこの発明の一実施例をあられす斜視図、第２図
は光電変換装置の回路構成の１例をあられす回路図、第
３図は従来の光電変換装置の一例をあられす斜視図、第
４図は第３図の従来例の要部を説明する説明図である。
１・・・透明絶縁基板 Ｌｌ・・・発光素子 ＤＡ、・
・・光電変換素子アレイ（受光素子）
代理人 弁理士 松 本 武 彦
＠１図
第２図
第３図
第４図
用り積し〒ネ■↑正看Ｔ（自発
ロ訃０６１年１０月１８日
Ｄｉ０６ １ ′４４与許ＥｉＪｉｆｆｉ１ ９ ５
８ １ １号２、発明の名称
光電変換装置
３、補正をする者
事件との関係 特許出願入
居 所 東京都千代田区霞が関−丁目３番１
号５、 ？ｉＩｉ正により増加する発明の数な
し
６、 ？ｌＩｉ正の対象 図面
７、補正の内容 添付図面中筒２図を別紙のとおり
訂正する。
第２図Fig. 1 is a perspective view of an embodiment of the present invention, Fig. 2 is a circuit diagram of an example of the circuit configuration of a photoelectric conversion device, and Fig. 3 is a perspective view of an example of a conventional photoelectric conversion device. 4 are explanatory diagrams illustrating the main parts of the conventional example shown in FIG. 3. 1...Transparent insulating substrate Ll...Light emitting element DA,...
...Photoelectric conversion element array (light-receiving element) Agent Patent attorney Takehiko Matsumoto JapanDi06 1 '44 GrantEiJiffi1 9 5
8 1 1 No. 2, Name of the invention Photoelectric conversion device 3, Relationship with the case of the person making the amendment Patent application location 3-1 Kasumigaseki-chome, Chiyoda-ku, Tokyo
No.5, ? iii The number of inventions increases due to positive
6, ? lIi Correct Target Drawing 7, Contents of Amendment The attached Drawing Middle Cylinder 2 is corrected as shown in the attached sheet. Figure 2
Claims (1)
させた発光素子と、透明絶縁基板の第２次側に接触させ
た受光素子とを備え、前記透明絶縁基板が、前記両素子
の支持と、電気的絶縁と、光伝達とを行うようになって
いることを特徴とする光電変換装置。(1) A transparent insulating substrate, a light emitting element in contact with a primary side of the transparent insulating substrate, and a light receiving element in contact with a secondary side of the transparent insulating substrate; A photoelectric conversion device characterized by supporting an element, electrically insulating it, and transmitting light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61195811A JPS6351682A (en) | 1986-08-20 | 1986-08-20 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61195811A JPS6351682A (en) | 1986-08-20 | 1986-08-20 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6351682A true JPS6351682A (en) | 1988-03-04 |
Family
ID=16347378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61195811A Pending JPS6351682A (en) | 1986-08-20 | 1986-08-20 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351682A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55124279A (en) * | 1979-03-20 | 1980-09-25 | Nec Corp | Photo coupler |
| JPS5653231A (en) * | 1979-09-28 | 1981-05-12 | Zangs Ag Maschf | Hook apparatus for jacquard machine |
-
1986
- 1986-08-20 JP JP61195811A patent/JPS6351682A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55124279A (en) * | 1979-03-20 | 1980-09-25 | Nec Corp | Photo coupler |
| JPS5653231A (en) * | 1979-09-28 | 1981-05-12 | Zangs Ag Maschf | Hook apparatus for jacquard machine |
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