JPS6350801Y2 - - Google Patents
Info
- Publication number
- JPS6350801Y2 JPS6350801Y2 JP1985087792U JP8779285U JPS6350801Y2 JP S6350801 Y2 JPS6350801 Y2 JP S6350801Y2 JP 1985087792 U JP1985087792 U JP 1985087792U JP 8779285 U JP8779285 U JP 8779285U JP S6350801 Y2 JPS6350801 Y2 JP S6350801Y2
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- coefficient thermistor
- ohmic contact
- thickness direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000605 extraction Methods 0.000 claims description 13
- 230000020169 heat generation Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【考案の詳細な説明】
本考案は正の抵抗温度係数を有するチタン酸バ
リウム系半導体磁器より成る正特性サーミスタに
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a positive temperature coefficient thermistor made of barium titanate semiconductor ceramic having a positive temperature coefficient of resistance.
正特性サーミスタはキユリー温度を適当に選定
することにより任意の発熱温度が得られること、
特定温度に達すると電気抵抗値が急激に増大し、
電流および発熱温度を自動的に制御する電流制御
機能または自己温度制御機能を有すること等々の
特長があり、安全で信頼性も高いことから、従来
より各種の電子、電気機器における電流制御用素
子または各種の発熱装置における発熱源として広
く利用されている。 A positive temperature coefficient thermistor can obtain any heat generation temperature by appropriately selecting the Curie temperature.
When a certain temperature is reached, the electrical resistance value increases rapidly,
It has features such as having a current control function or self-temperature control function that automatically controls current and heat generation temperature, and is safe and reliable, so it has been used as a current control element or It is widely used as a heat source in various heat generating devices.
正特性サーミスタは、一般に、正特性サーミス
タ素体の相対する厚み方向の両面に、オーム性接
触電極を設けると共に、該電極に同じくオーム性
接触の引出電極部を導通接続し、該引出電極部に
外部との接続用のリード線等を半田付けまたはハ
トメ結合などによつて導通接続する構造となつて
いる。 Generally, a positive temperature coefficient thermistor is provided with ohmic contact electrodes on both sides of the positive temperature coefficient thermistor element body in the thickness direction, and a lead electrode part that also has ohmic contact is conductively connected to the electrode. It has a structure in which lead wires and the like for connection with the outside are electrically connected by soldering or eyelet coupling.
しかし、引出電極部をオーム性接触として構成
すると、該引出電極部の部分の発熱が大きくな
り、リード線等の外部接続体と電極引出電極との
接続方法または外部接続体自体の熱的条件が厳し
くなると共に接続箇所の熱的劣化を招き、信頼性
が低下する。特に、平板状の正特性サーミスタ素
体の厚み方向の両面に電極を付与した正特性サー
ミスタにおいては、引出電極部相互間または引出
電極部と本来の電極との間の距離が、電極相互間
の距離より短くなる場合が多く、距離の短い部分
に電流が集中して流れ、局部発熱が発生するの
で、前述の欠点が一層顕著に現れる。 However, if the lead electrode part is configured as an ohmic contact, heat generation at the lead electrode part increases, and the method of connecting the lead wire or other external connector to the lead electrode or the thermal conditions of the external connector itself As the conditions become more severe, thermal deterioration of the connection points occurs, reducing reliability. In particular, in a positive temperature coefficient thermistor in which electrodes are provided on both sides in the thickness direction of a flat positive temperature coefficient thermistor body, the distance between the lead electrode parts or the lead electrode part and the original electrode is In many cases, the distance is shorter than the distance, and the current flows in a concentrated manner in the short distance, causing local heat generation, so the above-mentioned drawback becomes even more noticeable.
本考案は上述する従来の欠点を除去し、引出電
極部における発熱を抑制し、リード線等の外部接
続体と引出電極部との接続方法または外部接続体
自体の熱的設計条件を緩和すると共に、接続箇所
の熱的劣化を防止し、信頼性を向上させた正特性
サーミスタを提供することを目的とする。 The present invention eliminates the above-mentioned conventional drawbacks, suppresses heat generation in the lead electrode part, relaxes the method of connecting the lead wire or other external connector and the lead electrode part, or the thermal design conditions of the external connector itself. The object of the present invention is to provide a positive temperature coefficient thermistor that prevents thermal deterioration of connection points and improves reliability.
上記目的を達成するため、本考案に係る正特性
サーミスタ装置は、板状に形成された正特性サー
ミスタ素体の厚み方向の両面にオーム性接触電極
を形成し、前記正特性サーミスタ素体の厚み方向
の両面に、前記オーム性接触電極に導通接続する
非オーム性接触の引出電極部をそれぞれ形成した
ことを特徴とする。 In order to achieve the above object, the PTC thermistor device according to the present invention has ohmic contact electrodes formed on both sides in the thickness direction of a PTC thermistor element formed in a plate shape, and The device is characterized in that non-ohmic contact extraction electrode portions electrically connected to the ohmic contact electrode are formed on both sides of the direction.
即ち、本考案においては、板状に形成された正
特性サーミスタ素体の厚み方向の両面にオーム性
接触電極を形成した板状の正特性サーミスタを得
る場合に、従来、オーム性接触となつていた引出
電極部を、非オーム性接触として形成することに
より、引出電極部と正特性サーミスタ素体との接
触面に電位障壁を設け、引出電極部から正特性サ
ーミスタ素体への電流の流れを抑制し、引出電極
部における発熱、局部的発熱を極力抑えるように
したものである。 That is, in the present invention, when obtaining a plate-shaped positive temperature coefficient thermistor in which ohmic contact electrodes are formed on both sides in the thickness direction of a plate-shaped positive temperature coefficient thermistor body, it is possible to By forming the lead electrode part as a non-ohmic contact, a potential barrier is provided at the contact surface between the lead electrode part and the PTC thermistor body, and the flow of current from the lead electrode part to the PTC thermistor body is prevented. This is to suppress heat generation in the extraction electrode portion and local heat generation as much as possible.
以下実施例たる添付図面を参照し、本考案の内
容を具体的に説明する。第１図Ａは本考案に係る
正特性サーミスタの平面図、第１図Ｂは第１図
B1−B1線上における断面図である。 DESCRIPTION OF THE PREFERRED EMBODIMENTS The content of the present invention will be specifically described below with reference to the accompanying drawings, which are examples. FIG. 1A is a plan view of a positive temperature coefficient thermistor according to the present invention, and FIG. 1B is a plan view of a positive temperature coefficient thermistor according to the present invention.
FIG. 3 is a cross-sectional view taken along the line B1 - B1 .
この実施例では、平板状の正特性サーミスタ素
体１の厚み方向の両面に、オーム性接触の電極
２，３を形成するとともに、それぞれの一端縁
に、非オーム性接触引出電極４，５を導通接続し
た構造となつている。電極２，３は正特性サーミ
スタ素体１の平面積より小さい面積とし、その残
りの平面内に前記引出し電極部４，５を形成して
ある。引出電極部４，５は互いに対向しないよう
な位置に形成すると共に、それぞれの形成領域内
に、素体１を厚み方向に貫通する貫通孔６，７を
貫設し、該貫通孔６，７に対してリード線等をハ
トメ結合する構造となつている。 In this embodiment, ohmic contact electrodes 2 and 3 are formed on both sides in the thickness direction of a flat positive temperature coefficient thermistor body 1, and non-ohmic contact lead electrodes 4 and 5 are formed on one edge of each. It has a conductive connection structure. The electrodes 2 and 3 have an area smaller than the planar area of the positive temperature coefficient thermistor body 1, and the extraction electrode portions 4 and 5 are formed in the remaining plane. The extraction electrode parts 4 and 5 are formed in positions that do not face each other, and through holes 6 and 7 that penetrate the element body 1 in the thickness direction are provided in the respective formation regions. It has a structure in which lead wires etc. are connected through eyelets.
前記電極２，３は、この種の酸化物半導体磁器
にオーム性接触電極を形成する各種の方法、たと
えばニツケルの無電解メツキ法、金属溶射法ある
いはIn−GAをこすり付ける方法等によつて形成
される。また、オーム性接触電極とした後、その
表面に銀または銀化合物ペーストを塗布焼付けし
た２層構造とし、素体１に対する接着性、リード
線等に対する半田付け性等を向上させることもで
きる。 The electrodes 2 and 3 are formed by various methods for forming ohmic contact electrodes on this type of oxide semiconductor porcelain, such as electroless nickel plating, metal spraying, or rubbing In-GA. be done. Furthermore, after forming an ohmic contact electrode, silver or silver compound paste can be coated and baked on the surface to form a two-layer structure to improve adhesion to the element body 1, solderability to lead wires, etc.
また前記引出電極部４，５は、前記電極２，３
を形成した後、その端部の一部を覆うように銀ペ
ースト等を塗布し、かつ焼付けることによつて形
成できる。 Further, the extraction electrode parts 4 and 5 are connected to the electrodes 2 and 3.
It can be formed by coating a silver paste or the like so as to cover a part of the end portion and baking it.
上述のように、引出電極４，５を非オーム性接
触電極として形成すると、引出電極部４，５と素
体１との接触面に電位障壁が形成されるので、引
出電極部４，５と電極２，３との間の距離が短い
にも拘らず、引出電極部４，５から素体１の方向
に流れる電流が減少し、引出電極部４，５の部分
の発熱が抑制される。 As described above, when the extraction electrodes 4, 5 are formed as non-ohmic contact electrodes, a potential barrier is formed at the contact surface between the extraction electrode parts 4, 5 and the element body 1, so that the extraction electrode parts 4, 5 and Although the distance between the electrodes 2 and 3 is short, the current flowing from the extraction electrode parts 4 and 5 toward the element body 1 is reduced, and heat generation in the extraction electrode parts 4 and 5 is suppressed.
第２図は更に別の実施例を示している。この実
施例の特徴は、板状に形成した正特性サーミスタ
素体１の厚み方向の両面に、オーム性接触の電極
２，３を設け、正特性サーミスタ素体１の相対す
る両側面に、非オーム性接触となる引出電極部
４，５を設けたことである。この実施例に示す正
特性サーミスタは、送風機となる適当な間隔をお
いて複数個配列した、いわゆるハーモニカ型の発
熱装置を構成する場合や、プリント回路基板の配
線パターンに直接的に半田装着するチツプ型とし
て使用する場合に好適なものである。 FIG. 2 shows yet another embodiment. The feature of this embodiment is that ohmic contact electrodes 2 and 3 are provided on both sides in the thickness direction of a PTC thermistor element 1 formed in a plate shape, and non-contact electrodes 2 and 3 are provided on both opposing sides of the PTC thermistor element 1. This is because the extraction electrode portions 4 and 5 are provided for ohmic contact. The positive temperature coefficient thermistor shown in this example can be used to construct a so-called harmonica-type heat generating device in which a plurality of them are arranged at appropriate intervals to serve as an air blower, or to be used in a chip that is soldered directly to the wiring pattern of a printed circuit board. It is suitable for use as a mold.
以上述べたように、本考案は、板状に形成され
た正特性サーミスタ素体の厚み方向の両面にオー
ム性接触電極を形成し、前記正特性サーミスタ素
体の厚み方向の両面に、前記オーム性接触電極に
導通接続する非オーム性接触の引出電極部をそれ
ぞれ形成したことを特徴とするから、厚み方向の
両面に電極を有する板状の正特性サーミスタにお
いて、引出電極部における発熱を極力少なくし、
リード線等の外部接続体と引出電極部との接続方
法または外部接続体自体の熱的設計条件を緩和す
ると共に、接続箇所の熱的劣化を防止し、信頼性
を向上させることができる。 As described above, in the present invention, ohmic contact electrodes are formed on both sides in the thickness direction of a positive temperature coefficient thermistor element formed in a plate shape, and the ohmic contact electrodes are formed on both sides of the positive temperature coefficient thermistor element in the thickness direction. Since the non-ohmic contact lead electrode parts are respectively formed to conductively connect to the positive temperature contact electrodes, heat generation in the lead electrode parts can be minimized in a plate-shaped positive temperature coefficient thermistor having electrodes on both sides in the thickness direction. death,
It is possible to ease the thermal design conditions for the method of connecting an external connection body such as a lead wire and the extraction electrode section or for the external connection body itself, prevent thermal deterioration of the connection location, and improve reliability.
第１図Ａは方向に係る正特性サーミスタの正面
図、第１図Ｂは第１図ＡのB1−B1線上における
断面図、第２図は本考案に係る正特性サーミスタ
の他の実施例における断面図である。
１……正特性サーミスタ素体、２，３……電
極、４，５……引出電極部。
FIG. 1A is a front view of a positive temperature coefficient thermistor according to the direction, FIG. 1B is a sectional view taken along line B 1 -B 1 of FIG. 1A, and FIG. 2 is another implementation of the positive temperature coefficient thermistor according to the present invention. FIG. 3 is a cross-sectional view in an example. 1... Positive temperature coefficient thermistor element body, 2, 3... Electrode, 4, 5... Leading electrode part.
Claims (1)
み方向の両面にオーム性接触電極を形成し、前
記正特性サーミスタ素体の厚み方向の両面に、
前記オーム性接触電極に導通接続する非オーム
性接触の引出電極部をそれぞれ形成したことを
特徴とする正特性サーミスタ。 (2) 前記オーム性接触電極は、前記正特性サーミ
スタの厚み方向の両面の平面積より小さく形成
し、前記引出電極部は前記オーム性接触電極の
一部を覆い、オーム性接触電極の形成されてい
ない前記正特性サーミスタ素体の厚み方向の両
面に限つて形成したことを特徴とする実用新案
登録請求の範囲第１項に記載の正特性サーミス
タ。 (3) 前記引出電極部は、正特性サーミスタ素体の
厚み方向の面から側面に延長して形成したこと
を特徴とする実用新案登録請求の範囲第１項に
記載の正特性サーミスタ。[Claims for Utility Model Registration] (1) Ohmic contact electrodes are formed on both sides in the thickness direction of a positive temperature coefficient thermistor element formed in a plate shape, and on both sides of the positive temperature coefficient thermistor element in the thickness direction,
A positive temperature coefficient thermistor, characterized in that a non-ohmic contact lead electrode portion is formed to conductively connect to the ohmic contact electrode. (2) The ohmic contact electrode is formed to be smaller than the planar area of both surfaces of the positive temperature coefficient thermistor in the thickness direction, and the extraction electrode part covers a part of the ohmic contact electrode, and the ohmic contact electrode is 2. The positive temperature coefficient thermistor according to claim 1, wherein the positive temperature coefficient thermistor is formed only on both surfaces in the thickness direction of the positive temperature coefficient thermistor body. (3) The positive temperature coefficient thermistor according to claim 1, wherein the lead electrode portion is formed to extend from the surface in the thickness direction of the positive temperature coefficient thermistor body to the side surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8779285U JPS6115704U (en) | 1985-06-10 | 1985-06-10 | Positive characteristic thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8779285U JPS6115704U (en) | 1985-06-10 | 1985-06-10 | Positive characteristic thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6115704U JPS6115704U (en) | 1986-01-29 |
| JPS6350801Y2 true JPS6350801Y2 (en) | 1988-12-27 |
Family
ID=30640335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8779285U Granted JPS6115704U (en) | 1985-06-10 | 1985-06-10 | Positive characteristic thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6115704U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55110002A (en) * | 1979-02-16 | 1980-08-25 | Tdk Electronics Co Ltd | Positive temperature coefficient thermistor |
-
1985
- 1985-06-10 JP JP8779285U patent/JPS6115704U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55110002A (en) * | 1979-02-16 | 1980-08-25 | Tdk Electronics Co Ltd | Positive temperature coefficient thermistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6115704U (en) | 1986-01-29 |
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