JPS6348931Y2 - - Google Patents
Info
- Publication number
- JPS6348931Y2 JPS6348931Y2 JP16349082U JP16349082U JPS6348931Y2 JP S6348931 Y2 JPS6348931 Y2 JP S6348931Y2 JP 16349082 U JP16349082 U JP 16349082U JP 16349082 U JP16349082 U JP 16349082U JP S6348931 Y2 JPS6348931 Y2 JP S6348931Y2
- Authority
- JP
- Japan
- Prior art keywords
- filament
- electron
- electron gun
- emitting surface
- impact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【考案の詳細な説明】 本考案は膜作成に適した電子銃に関する。[Detailed explanation of the idea] The present invention relates to an electron gun suitable for film production.
真空蒸着装置や高周波イオンプレーテイング等
においては、例えば第１図に示す様に、坩堝１に
蒸発材料２を入れ該坩堝を陽極とし、電子銃３の
陰極フイラメント６からの電子を該蒸発材料上に
導いて該材料を電子ビーム４で衝撃して蒸発さ
せ、基板５に付着させている。この際、この蒸気
が陰極フイラメントに当たることによる該フイラ
メントの破損と汚れを免れる為に、該陰極フイラ
メントを直接蒸気に晒されない位置に配置し、該
フイラメントからの電子をレンズＬによる磁場又
は電場により曲げて蒸発材料に導く様にしてい
る。さて、この様に電子衝撃により材料を蒸発さ
せる電子銃としては、一般に低電圧で大電力のビ
ーム（即ち、ビーム電流の大きいビーム）が得ら
れる様に、電子放出面（即ち陰極フイラメントの
電子放出面）の大きいものが使用される。例え
ば、円板状のものや、第２図に示す如き渦巻き状
のフイラメントを要する電子銃が用いられてい
る。所で、第３図に示す様に、陽極７に対し陰極
フイラメント６に負の加速電圧を印加させた時、
該フイラメントから電子４が放出されると、該フ
イラメントと陽極間及びそれらの付近の電位分布
が破線で示したものから実線で示したものにな
る。尚、図中８はウエネルト電極である。そし
て、電子ビームの衝撃により蒸発材料が蒸発し基
板５方向に向かうのであるが、この時に、蒸気の
一部が電子ビームの衝撃によりイオン化する。こ
れらのイオンは前記フイラメント６の電子放出面
から放出されている電子ビームの軌道（実質的に
導体となつている。）に沿つて前記フイラメント
６方向に向い、該フイラメントに近づいた時、前
記実線に示す等電位線に直角に入り込む（図の一
点鎖線参照）。この結果、フイラメント６の電子
放出面の中心部がイオンによりスパツタされ、該
フイラメントは破線（例、断線）してしまい、新
しいものに取り変えねばならない。例えば、第２
図に示す如きフイラメントでは中心部Ｋが溶けて
断線してしまう。即ち、該イオンスパツタにより
フイラメントの寿命が著しく短くなつてしまい、
経済的及び操作的に著しく不利となる。 In vacuum evaporation equipment, high frequency ion plating, etc., for example, as shown in FIG. 1, an evaporation material 2 is placed in a crucible 1, and the crucible is used as an anode, and electrons from a cathode filament 6 of an electron gun 3 are transferred onto the evaporation material. The material is evaporated by being bombarded with an electron beam 4 and adhered to a substrate 5. At this time, in order to avoid damage and staining of the cathode filament due to the vapor hitting the cathode filament, the cathode filament is placed in a position where it is not directly exposed to the vapor, and the electrons from the filament are bent by the magnetic field or electric field of the lens L. and guide it to the evaporation material. Now, in an electron gun that evaporates material by electron impact, it is generally necessary to use an electron emitting surface (i.e., an electron emitting surface of the cathode filament) so that a beam with low voltage and high power (i.e., a beam with a large beam current) can be obtained. The one with a large surface) is used. For example, electron guns that require a disk-shaped filament or a spiral filament as shown in FIG. 2 are used. By the way, as shown in FIG. 3, when a negative accelerating voltage is applied to the cathode filament 6 with respect to the anode 7,
When electrons 4 are emitted from the filament, the potential distribution between the filament and the anode and in their vicinity changes from that shown by the broken line to that shown by the solid line. Note that 8 in the figure is a Wehnelt electrode. Then, the evaporation material evaporates due to the impact of the electron beam and moves toward the substrate 5, and at this time, a part of the vapor is ionized due to the impact of the electron beam. These ions are directed toward the filament 6 along the trajectory of the electron beam emitted from the electron emitting surface of the filament 6 (which is essentially a conductor), and when they approach the filament, they follow the solid line. It enters at right angles to the equipotential line shown in (see the dashed-dotted line in the figure). As a result, the center of the electron emitting surface of the filament 6 is sputtered by ions, causing a broken line (for example, breakage) in the filament, which must be replaced with a new one. For example, the second
In a filament as shown in the figure, the central portion K melts and breaks. In other words, the life of the filament is significantly shortened due to the ion spatter,
It is economically and operationally disadvantageous.
本考案はこの様な欠点を解決する為になされた
もので、フイラメントの電子放出面の中心部を他
の部分に比べ高電粒子の衝撃に対し強くした新規
な電子銃を提供するものである。 The present invention was devised to solve these drawbacks, and provides a new electron gun in which the central part of the electron emitting surface of the filament is more resistant to impact from high electric particles than other parts. .
第４図は本考案の一実施例を示した電子銃の陰
極フイラメントの概略である。 FIG. 4 is a schematic diagram of a cathode filament of an electron gun showing an embodiment of the present invention.
この陰極フイラメント６は例えば直径0.55mmの
タングステン線を渦巻き状に巻き直径12.2mmの平
面状にしたものである。端子は加熱電源（図示せ
ず）に接続されている。該フイラメントの電子放
出面の中央部には例えば直径3.5mm厚さ１mmの高
融点金属円板９（例、タンタル板）をスポツト容
器等により取り付ける。この様なフイラメントを
有する電子銃を前記第１図に示す如き蒸発材料の
衝撃に使用すれば、例えイオンが該フイラメント
の中央部を衝撃しても、短時間で破線（断線）す
ることがない。 The cathode filament 6 is, for example, a tungsten wire with a diameter of 0.55 mm spirally wound into a planar shape with a diameter of 12.2 mm. The terminals are connected to a heating power source (not shown). At the center of the electron emitting surface of the filament, a high melting point metal disk 9 (for example, a tantalum plate) having a diameter of 3.5 mm and a thickness of 1 mm is attached using a spot container or the like. If an electron gun having such a filament is used to bombard the evaporated material as shown in FIG. .
又、別の実施例として、前記フイラメントの中
央部の線の直径を他の部分より適宜大きくしても
よい。 In another embodiment, the diameter of the wire in the central portion of the filament may be appropriately larger than that in other portions.
本案によれば、フイラメントの寿命が著しく延
び、経済的及び操作的に著しく有利となる。 According to the present invention, the service life of the filament is significantly extended, resulting in significant economic and operational advantages.
尚、本案は電子放出面が適宜な大きさを有して
いるフイラメントを持つ電子銃なら何れにも応用
できる。 Incidentally, the present invention can be applied to any electron gun having a filament whose electron emitting surface has an appropriate size.
第１図は蒸着装置の概略、第２図はフイラメン
トの一例、第３図は従来の問題点の説明を補足す
る為に用いたもの、及び第４図は本考案の一実施
例の要部（フイラメント）を夫々示したものであ
る。
６：フイラメント、９：高融点金属円板。
Figure 1 is an outline of the vapor deposition apparatus, Figure 2 is an example of a filament, Figure 3 is used to supplement the explanation of conventional problems, and Figure 4 is the main part of an embodiment of the present invention. (filament). 6: filament, 9: high melting point metal disk.
Claims (1)
粒子の衝撃に対し強くした電子銃。 ２ 電子放出面の中心部を他の部分に比べ大きく
した特許請求の範囲第１項に記載の電子銃。 ３ 電子放出面の中心部を高融点金属で補強した
特許請求の範囲第１項に記載の電子銃。[Claims for Utility Model Registration] 1. An electron gun in which the central part of the electron emitting surface is made more resistant to the impact of charged particles than other parts. 2. The electron gun according to claim 1, wherein the center part of the electron emission surface is larger than other parts. 3. The electron gun according to claim 1, wherein the center of the electron emission surface is reinforced with a high melting point metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16349082U JPS5966847U (en) | 1982-10-28 | 1982-10-28 | electron gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16349082U JPS5966847U (en) | 1982-10-28 | 1982-10-28 | electron gun |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5966847U JPS5966847U (en) | 1984-05-04 |
| JPS6348931Y2 true JPS6348931Y2 (en) | 1988-12-15 |
Family
ID=30358715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16349082U Granted JPS5966847U (en) | 1982-10-28 | 1982-10-28 | electron gun |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5966847U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2689929B2 (en) * | 1994-12-15 | 1997-12-10 | 松下電器産業株式会社 | Evaporation source |
| US6064686A (en) * | 1999-03-30 | 2000-05-16 | Tfi Telemark | Arc-free electron gun |
-
1982
- 1982-10-28 JP JP16349082U patent/JPS5966847U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5966847U (en) | 1984-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3562141A (en) | Vacuum vapor deposition utilizing low voltage electron beam | |
| US4100055A (en) | Target profile for sputtering apparatus | |
| RU2168233C2 (en) | Cathode for spraying or electric-arc evaporation (alternatives) and device for coating or ion-beam implantation of substrates | |
| DE3373590D1 (en) | Magnetron cathode sputtering system | |
| US3875028A (en) | Method of manufacture of x-ray tube having focusing cup with non emitting coating | |
| US3450824A (en) | Method and apparatus for producing and directing an electron beam | |
| US5896012A (en) | Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode | |
| JPS6348931Y2 (en) | ||
| Probyn | A low-energy ion source for the deposition of chromium | |
| JP3529775B2 (en) | Electron beam gun with grounded shield to prevent arcdown | |
| EP1081247A2 (en) | Arc type ion plating apparatus | |
| US3883679A (en) | Vapor source assembly | |
| JP3075129B2 (en) | Ion source | |
| US20220285123A1 (en) | Ion gun and ion milling machine | |
| JPS594045Y2 (en) | Ionization device for thin film production | |
| JP2020173984A (en) | Ion source, ion implanter, and magnesium ion generation method | |
| JP3814114B2 (en) | Electron beam equipment | |
| JP4073158B2 (en) | Electron beam equipment | |
| US4846953A (en) | Metal ion source | |
| US3857014A (en) | Electron beam generator | |
| US3251536A (en) | Getter-ion pumps | |
| US3472999A (en) | Electron beam generating device | |
| JP3961158B2 (en) | Electron beam evaporator | |
| US3912930A (en) | Electron beam focusing system | |
| JP2689929B2 (en) | Evaporation source |