JPS634657B2 - - Google Patents
Info
- Publication number
- JPS634657B2 JPS634657B2 JP55188091A JP18809180A JPS634657B2 JP S634657 B2 JPS634657 B2 JP S634657B2 JP 55188091 A JP55188091 A JP 55188091A JP 18809180 A JP18809180 A JP 18809180A JP S634657 B2 JPS634657 B2 JP S634657B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gas
- thin film
- oxide film
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000007784 solid electrolyte Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 229910017768 LaF 3 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- BOTHRHRVFIZTGG-UHFFFAOYSA-K praseodymium(3+);trifluoride Chemical compound F[Pr](F)F BOTHRHRVFIZTGG-UHFFFAOYSA-K 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- XRADHEAKQRNYQQ-UHFFFAOYSA-K trifluoroneodymium Chemical compound F[Nd](F)F XRADHEAKQRNYQQ-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Computer Hardware Design (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
本発明は、絶縁ゲート型電解効果トランジスタ
（以下MOS型FETと言う）構造のガス検知素子
に関する。
本発明者は、特に特願昭50−154248号（特開昭
52−77794号公報参照）において、MOS型FET
のゲート電極としてPd（パラジウム）を用いた水
素ガスセンサーを提案した。この水素ガスセンサ
ーの動作原理は、水素ガスがPdに吸着すること
により、Pdの仕事函数が変化し、その結果MOS
型FETのしきい値特性が変化することを利用し
て水素ガスの有無を検出するものである。
また特開昭52−26292号公報には、ゲート絶縁
膜として固体電解質であるガラスからなるイオン
感応層を用いた。電解液中のイオンを検出するイ
オンセンサーが開示されている。このイオンセン
サーの動作原理も、上述の水素ガスセンサーと同
じであり、ガスセンサーにも応用可能なものであ
る。
しかし、これら水素ガスセンサーおよびイオン
センサーは、いずれも以下に示すような欠点を有
している。
すなわち、これらのセンサーは、どちらもガス
あるいはイオンの有無を感知するゲート電極ある
いはゲート絶縁膜の組成によつて、検出できるガ
スあるいはイオンの種類が限られてしまい、複数
種のガスを検出できる多目的なガスセンサーとし
ては使用できないものである。
これを解決するため、特開昭52−26292号公報
では、ゲート絶縁膜の組成を異ならせたMOS型
FETを複数個設けることが提案されているが、
これでは検出したいガスの種類が多くなればなる
ほど、それに応じてMOS型FETの数も多くしな
ければならず、とうてい小型かつ低価格の多目的
ガスセンサーを実現することはできない。
本発明は、以上の点に鑑み、１個のMOS型
FETで、複数種のガスを検出し得るガス検知素
子を実現し、小型かつ低価格の多目的ガスセンサ
ーを提供することを目的とするものである。
以下に、１実施例を示す。
第１図および第２図は、本発明によるガス検知
素子の概略の構成を示す図であり、１，２，３，
４の部分は、通常のMOS型FETの構造である。
即ち、１はＰ型Siの半導体基板であり、２はｎ型
のソース領域およびドレイン領域であり、その間
にチヤンネル領域が形成されている。３はフイー
ルド酸化物であり、酸化ケイ素（SiO2）からな
る。４は金属の中間電極であり、この材質は、
Au（金）、Ag（銀）、Bi（ビスマス）、Al（アルミニ
ウム）、fa（ランタン）、Pr（ブラセオジミウム）、
Nd（ネオジミウム）、Ce（セリウム）、Gd（カドリ
ニウム）Cu（銅）の中から選択された。５は、薄
膜固体電解質であり、LaF3（フツ化ランタン）、
CeF3（フツ化セリウム）、NdF3（フツ化ネオジミ
ウム）、PrF3（フツ化プラセオジミウム）の中か
ら選択された。６は金属のゲート電極であり、ガ
スとの反応速度を高くする目的で、格子メツシユ
状の構造をとつている。材質は、４の同じ元素群
の中から選択されている。７は、Cr／Auのメタ
ライゼンシヨンされた、信号処理回路へのリー
ド・パツド部である。
トランジスタ構造は、周知の手法で製作され、
0.05Ωcmの抵抗を有する＜100＞方位のボロン添
加のＰ型Siウエーハを使う。拡散用マスクとし
て、250nｍの熱酸化膜で、通常の技術により、
パターニングされる。ドレイン及びソース領域
は、PH3を添加材として、1050℃で拡散される。
酸化膜はHFにより除去され、H2O2−NH3、
H2O2−HCl、HF、及び純水で洗浄される。次
に、400℃で、酸素中にてSiH4の分解により、
200nｍのSiO2膜をデポジツトする。ゲート酸化
用のゲート部分がエツチングされ、その後に875
℃で乾燥酸素中で、30nｍのゲート酸化が行なわ
れる。ソースドレインのコンタクトホールが開か
れ、30nｍのクロムと150nｍの金が蒸着される。
次に、フオトレジスト技術により、ゲート部分
に、Biを電子ビーム蒸着する。150nｍの厚みで
ある。このBi薄膜の上にLaF3膜をデポジツトす
る。200〜1500nｍの厚みで良好な結果を示す。
200nｍ以下はピンホールが発生し、1500nｍ以上
はインピーダンスが高くなり不適当である。この
LaF3膜の上に、Auの格子状薄膜を構成する。こ
れによりAu／LaF3／Biの構造の薄膜電池構造が
つくられ、この電圧がMOS型FETのゲート電圧
に付加される構成が成立する。
薄膜のデポジシヨンは、全て10-7Torr以下の
高真空で為され、方法は、ボート加熱蒸着、電子
ビーム蒸着、スパツタリング蒸着、イオンビーム
スパツタリング蒸着等が工質に合せて使用され
る。特に、イオンビームスパツタリング蒸着は、
膜質及び物性値がよく制御でき、好適である。基
板温度は200〜300℃である。出発原料材質はいず
れも4N以上の純度である。
MOS型FET部のチヤンネル寸法は、幅20μ、
長さ1000μである。
本素子は、通常のMOS型FETと異なる特徴と
して、中間に電極４を有することである。基板１
に対して６に電圧を印加する効果は通常のFET
効果であるが、このゲート電圧は、４，６間の電
圧の影響を受ける構成であり、ここにガスの効果
を生起させることにより、ガスの検知を行なうも
のである、即わち、４，６間に下記の所定電圧を
印加した状態で、環境ガスに曝露すると、この間
の電流が流れ、インピーダンスが低下し、６の電
位がそのままゲート電圧として作用することにな
る。従つて、下部のFET部を作動させることに
なり、ガスの検知が行なわれたことになる。
The present invention relates to a gas detection element having an insulated gate field effect transistor (hereinafter referred to as MOS FET) structure. In particular, the inventor of the present invention
52-77794), MOS type FET
proposed a hydrogen gas sensor using Pd (palladium) as the gate electrode. The operating principle of this hydrogen gas sensor is that when hydrogen gas is adsorbed on Pd, the work function of Pd changes, and as a result, the MOS
The presence or absence of hydrogen gas is detected by utilizing changes in the threshold characteristics of the type FET. Further, in JP-A-52-26292, an ion-sensitive layer made of glass, which is a solid electrolyte, is used as a gate insulating film. An ion sensor is disclosed that detects ions in an electrolyte. The operating principle of this ion sensor is also the same as that of the hydrogen gas sensor described above, and it can also be applied to gas sensors. However, these hydrogen gas sensors and ion sensors both have the following drawbacks. In other words, both of these sensors are limited in the types of gases or ions that can be detected depending on the composition of the gate electrode or gate insulating film that senses the presence or absence of gases or ions. It cannot be used as a gas sensor. To solve this problem, Japanese Patent Application Laid-Open No. 52-26292 proposes a MOS type with a different composition of the gate insulating film.
It has been proposed to provide multiple FETs, but
In this case, as the number of gases to be detected increases, the number of MOS FETs must also increase accordingly, making it impossible to create a very compact and low-cost multipurpose gas sensor. In view of the above points, the present invention provides one MOS type
The aim is to create a gas detection element that can detect multiple types of gases using FETs, and to provide a small, low-cost, multipurpose gas sensor. One example is shown below. FIG. 1 and FIG. 2 are diagrams showing the general configuration of a gas detection element according to the present invention.
Part 4 is the structure of a normal MOS type FET.
That is, 1 is a P-type Si semiconductor substrate, 2 is an N-type source region and a drain region, and a channel region is formed between them. 3 is a field oxide made of silicon oxide (SiO 2 ). 4 is a metal intermediate electrode, the material of which is
Au (gold), Ag (silver), Bi (bismuth), Al (aluminum), fa (lanthanum), Pr (braceodymium),
It was selected from Nd (neodymium), Ce (cerium), Gd (cadrinium), and Cu (copper). 5 is a thin film solid electrolyte, LaF 3 (lanthanum fluoride),
It was selected from CeF 3 (cerium fluoride), NdF 3 (neodymium fluoride), and PrF 3 (praseodymium fluoride). Reference numeral 6 denotes a metal gate electrode, which has a lattice mesh structure for the purpose of increasing the reaction rate with gas. The materials are selected from the same four element groups. 7 is a lead pad portion to the signal processing circuit, which is made of Cr/Au metallization. The transistor structure is fabricated using well-known techniques.
A <100> oriented boron-doped P-type Si wafer with a resistance of 0.05 Ωcm is used. As a diffusion mask, a 250 nm thermal oxide film is used using standard techniques.
patterned. The drain and source regions are diffused at 1050° C. with PH 3 as an additive.
The oxide film is removed by HF, H 2 O 2 −NH 3 ,
Washed with H2O2 - HCl , HF, and pure water. Then, by decomposition of SiH4 in oxygen at 400℃,
Deposit a 200nm SiO 2 film. The gate area for gate oxidation is etched and then 875
A 30 nm gate oxidation is performed in dry oxygen at °C. Source-drain contact holes are opened and 30 nm of chromium and 150 nm of gold are deposited.
Next, Bi is electron beam evaporated onto the gate portion using photoresist technology. The thickness is 150nm. A LaF 3 film is deposited on top of this Bi thin film. Good results are shown for thicknesses of 200 to 1500 nm.
If it is less than 200 nm, pinholes will occur, and if it is more than 1500 nm, the impedance will be high and it is inappropriate. this
A lattice thin film of Au is constructed on top of the LaF 3 film. As a result, a thin film battery structure of Au/LaF 3 /Bi is created, and a configuration is established in which this voltage is added to the gate voltage of the MOS FET. All thin film deposition is performed in a high vacuum of 10 -7 Torr or less, and boat heating evaporation, electron beam evaporation, sputtering evaporation, ion beam sputtering evaporation, etc. are used depending on the material. In particular, ion beam sputtering deposition
The film quality and physical property values can be well controlled, which is preferable. The substrate temperature is 200-300°C. All starting materials have a purity of 4N or higher. The channel dimensions of the MOS type FET section are width 20μ,
The length is 1000μ. This element differs from a normal MOS FET in that it has an electrode 4 in the middle. Board 1
The effect of applying voltage to 6 is that of normal FET
As for the effect, this gate voltage is influenced by the voltage between 4 and 6, and by causing the gas effect here, gas detection is performed. When exposed to an environmental gas with a predetermined voltage applied between 6 and 6, a current flows between them, the impedance decreases, and the potential of 6 directly acts as a gate voltage. Therefore, the lower FET section was activated, and gas was detected.
【表】
第２図に示す如くに、Ａ部はFET部分であり、
Ｂは電池構成部であり、Ｃ部はバイアス印加制御
部であり、Ｄ部は信号源である。Ｃ部は例えば
MOS型OPアンプ回路により駆動でき、Ｄ部の先
に、CPUを接続して各種の制御に適応できる。
Ａ、Ｂ、Ｃ部は、高抵抗回路で、低電圧駆動が可
能であり、極めて低消費電力である。さらに、前
述の如く、きわめて応答の早いガス検知信号の発
生が可能であり、当然本素子は常温で作動でき、
加熱回路は不要である。
以上の如く、本発明の原理による検知素子は、
小型、薄型に設計でき、低消費電力、低電圧駆動
が可能で、ガスの選択性があり、さらに信頼性も
充分期待できる素子である。
従つて、小型、携帯型のガス検知測定器、警報
器、又はモニターに絶好の素子である。この場合
周辺の信号処理回路は、基板のSiウエーハ内に集
積できることは大きな特徴であり、システムの低
コスト化が可能である。
さらに、本発明の検知素子は、中間電極とゲー
ト電極間に印加するバイアス電圧の値を変えるだ
けで、異なる複数のガスの検出が可能となるた
め、１個の検知素子で多目的のガスセンサーを構
成でき、その応用性はきわめて高いものである。[Table] As shown in Figure 2, part A is the FET part,
B is a battery component, C section is a bias application control section, and D section is a signal source. For example, part C is
It can be driven by a MOS type OP amplifier circuit, and can be adapted to various types of control by connecting a CPU at the end of the D section.
Sections A, B, and C are high resistance circuits that can be driven at low voltage and have extremely low power consumption. Furthermore, as mentioned above, it is possible to generate a gas detection signal with extremely quick response, and of course this device can operate at room temperature.
No heating circuit is required. As described above, the sensing element according to the principle of the present invention is
It is a device that can be designed to be small and thin, has low power consumption, can be driven at low voltage, has gas selectivity, and is expected to be highly reliable. Therefore, it is an ideal element for small, portable gas detection measuring instruments, alarms, or monitors. In this case, a major feature is that the peripheral signal processing circuits can be integrated within the Si wafer of the substrate, making it possible to reduce the cost of the system. Furthermore, the sensing element of the present invention can detect multiple different gases by simply changing the value of the bias voltage applied between the intermediate electrode and the gate electrode, so a single sensing element can be used as a multipurpose gas sensor. can be configured, and its applicability is extremely high.
第１図および第２図は、本発明の原理的な構成
を示す図である。第３図は本発明の１実施例に係
る回路概念図である。
FIG. 1 and FIG. 2 are diagrams showing the basic configuration of the present invention. FIG. 3 is a conceptual diagram of a circuit according to an embodiment of the present invention.
Claims (1)
スおよびドレイン領域、少なくとも該ソース領域
およびドレイン領域間のチヤンネル領域上に形成
されたフイールド酸化膜、該フイールド酸化膜上
に形成された中間電極、該中間電極上に形成され
た薄膜固体電解質および該薄膜固体電解質上に形
成されたゲート電極からなることを特徴とするガ
ス検知素子。 ２ 前記ゲート電極を格子メツシユ状に形成した
ことを特徴とする特許請求の範囲第１項記載のガ
ス検知素子。[Scope of Claims] 1. A semiconductor substrate, a source and drain region formed on the semiconductor substrate, a field oxide film formed on at least a channel region between the source region and the drain region, and a field oxide film formed on the field oxide film. What is claimed is: 1. A gas sensing element comprising: an intermediate electrode formed on the intermediate electrode; a thin film solid electrolyte formed on the intermediate electrode; and a gate electrode formed on the thin film solid electrolyte. 2. The gas sensing element according to claim 1, wherein the gate electrode is formed in the shape of a lattice mesh.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55188091A JPS57111439A (en) | 1980-12-29 | 1980-12-29 | Gas detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55188091A JPS57111439A (en) | 1980-12-29 | 1980-12-29 | Gas detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57111439A JPS57111439A (en) | 1982-07-10 |
| JPS634657B2 true JPS634657B2 (en) | 1988-01-29 |
Family
ID=16217540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55188091A Granted JPS57111439A (en) | 1980-12-29 | 1980-12-29 | Gas detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57111439A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250352A (en) * | 1986-04-23 | 1987-10-31 | Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai | Field effect transistor type oxygen gas sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226292A (en) * | 1975-08-23 | 1977-02-26 | Res Dev Corp Of Japan | Ion sensor |
-
1980
- 1980-12-29 JP JP55188091A patent/JPS57111439A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226292A (en) * | 1975-08-23 | 1977-02-26 | Res Dev Corp Of Japan | Ion sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57111439A (en) | 1982-07-10 |
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