JPS6346381B2 - - Google Patents

Info

Publication number
JPS6346381B2
JPS6346381B2 JP57233751A JP23375182A JPS6346381B2 JP S6346381 B2 JPS6346381 B2 JP S6346381B2 JP 57233751 A JP57233751 A JP 57233751A JP 23375182 A JP23375182 A JP 23375182A JP S6346381 B2 JPS6346381 B2 JP S6346381B2
Authority
JP
Japan
Prior art keywords
reverse bias
collector current
fall time
base
bias breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57233751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59125079A (ja
Inventor
Yasutaka Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23375182A priority Critical patent/JPS59125079A/ja
Publication of JPS59125079A publication Critical patent/JPS59125079A/ja
Publication of JPS6346381B2 publication Critical patent/JPS6346381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2608Circuits therefor for testing bipolar transistors
    • G01R31/261Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP23375182A 1982-12-29 1982-12-29 トランジスタの測定方法 Granted JPS59125079A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23375182A JPS59125079A (ja) 1982-12-29 1982-12-29 トランジスタの測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23375182A JPS59125079A (ja) 1982-12-29 1982-12-29 トランジスタの測定方法

Publications (2)

Publication Number Publication Date
JPS59125079A JPS59125079A (ja) 1984-07-19
JPS6346381B2 true JPS6346381B2 (US06566495-20030520-M00011.png) 1988-09-14

Family

ID=16960002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23375182A Granted JPS59125079A (ja) 1982-12-29 1982-12-29 トランジスタの測定方法

Country Status (1)

Country Link
JP (1) JPS59125079A (US06566495-20030520-M00011.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223381U (US06566495-20030520-M00011.png) * 1988-07-29 1990-02-15

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6238372A (ja) * 1985-08-13 1987-02-19 Mitsubishi Electric Corp トランジスタの測定方法
JPH0322321Y2 (US06566495-20030520-M00011.png) * 1987-09-26 1991-05-15
US6541993B2 (en) * 2000-12-26 2003-04-01 Ericsson, Inc. Transistor device testing employing virtual device fixturing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111078A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Transistor testing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111078A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Transistor testing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223381U (US06566495-20030520-M00011.png) * 1988-07-29 1990-02-15

Also Published As

Publication number Publication date
JPS59125079A (ja) 1984-07-19

Similar Documents

Publication Publication Date Title
CN106482829B (zh) 单光子探测器的动态和静态联合测试系统及其测试方法
JPS6346381B2 (US06566495-20030520-M00011.png)
US3430077A (en) Semiconductor temperature transducer
US3694748A (en) Peak-to-peak detector
Thornton et al. Technology of micro-alloy diffused transistors
US3320532A (en) Logarithmic micro-microammeter having field effect transistor in feedback path
US2975286A (en) Radiation detection
US4010418A (en) Transistor circuits
JPS6130218Y2 (US06566495-20030520-M00011.png)
CN216670115U (zh) 一种直流电阻测试仪
US3001135A (en) Device for measuring electrical power
WO2023116325A1 (zh) 集成电路和电子设备
RU219375U1 (ru) Устройство измерения параметра статического коэффициента передачи тока биполярных транзисторов
US3366879A (en) Method for measuring the specific resistance of a silicon crystal by measuring the breakdown voltage
SU1626220A1 (ru) Способ определени температуры структуры реверсивно включаемых динисторов
SU1114991A1 (ru) Способ определени степени локализации тока в транзисторе
US4063170A (en) Level meter circuit
JP2606706B2 (ja) 半導体チェッカー
US3297942A (en) Electron tube transconductance testing circuit having transistorized plate current switching means
RU96257U1 (ru) Вольтметр
US3502982A (en) Expanded scale electrical indicating instrument
JPH01240885A (ja) 放射線検出器
JPH0590591A (ja) 絶縁ゲートバイポーラトランジスタのテストデバイス
JPS63253266A (ja) 微少電流測定法
SU111883A1 (ru) Способ одночастотного измерени сопротивлени катодов электронных ламп