JPS6344397A - Bubble generator for magnetic bubble memory - Google Patents

Bubble generator for magnetic bubble memory

Info

Publication number
JPS6344397A
JPS6344397A JP18675786A JP18675786A JPS6344397A JP S6344397 A JPS6344397 A JP S6344397A JP 18675786 A JP18675786 A JP 18675786A JP 18675786 A JP18675786 A JP 18675786A JP S6344397 A JPS6344397 A JP S6344397A
Authority
JP
Japan
Prior art keywords
magnetic
bubble
thin film
generating
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18675786A
Other languages
Japanese (ja)
Inventor
Hitoshi Oda
織田 仁
Takeo Ono
武夫 小野
Masao Sugata
菅田 正夫
Akira Niimi
新見 晄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP18675786A priority Critical patent/JPS6344397A/en
Publication of JPS6344397A publication Critical patent/JPS6344397A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a bubble generator generating magnetic bubbles, which has a low current value and less power consumption by using an exothermic resistance as a conductive pattern generating a partial magnetic field which generates magnetic bubbles on a magnetic thin film. CONSTITUTION:A hair pin-like exothermic resistance pattern 5 made of HfB2, etc., is additionally provided on a magnetic garnet thin film 4 as the conductive pattern generating the partial magnetic field generating magnetic bubbles, and wiring conductive patterns 6 made of AI-Cu, etc., are connected to the both ends of said pattern 5. When a pulse current IG is conducted in the exothermic resistance pattern 5, a downward partial magnetic field is impressed on part of the corresponding magnetic thin film 4. The direction of magnetizing the magnetic thin film 4 is inverted to point downward Y, and the magnetic bubble 8 is generated. The current value IG required for generating the magnetic bubble is minimized by raising the temperature of the magnetic thin film 4 after the conductive pattern heats. Consequently power consumption can be reduced.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は磁気バブルメモリのバブル発生基に関する。磁
気バブルメモリは高密度にて情報を記録することができ
るメモリとして各種電子装置への応用が考えられる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bubble generating group for a magnetic bubble memory. Magnetic bubble memory can be applied to various electronic devices as a memory that can record information at high density.

[従来の技術及びその問題点] 現在、コンピュータ用外部メモリ、電子ファイル用メモ
リ、静止画ファイル用メモリ等のメモリとしては、磁気
テープ、ウィンチエスタ−ディスク、フロッピーディス
ク、光ディスク、光磁気ディスク等の各種のメモリデバ
イスが使用されている。これらのメモリデバイスは情報
の記録や再生の際に記録再生用ヘッドをメモリに対し相
対的に移動させることが必要である。即ち、この様なヘ
ッドの相対的移動にともない、該ヘッドにより情報トラ
ックに固定的に情報列を記録したり該情報トラックに固
定的に記録されている情報列を再生したりする。
[Prior art and its problems] At present, as external memory for computers, memory for electronic files, memory for still image files, etc., there are magnetic tapes, Winchester disks, floppy disks, optical disks, magneto-optical disks, etc. Various types of memory devices are used. These memory devices require a recording/reproducing head to be moved relative to the memory when recording or reproducing information. That is, with such relative movement of the head, the head records an information string fixedly on the information track or reproduces the information string fixedly recorded on the information track.

しかるに、近年、次第に記録密度の高度化が要求される
につれて、ヘッドを情報トラックに正確に追従させるた
めのトラッキング制御が複雑になり該制御が不十分なた
めに記録再生信号の品位が低下したり、ヘッド移動機構
の振動やメモリ表面に付着したゴミ等のために記録再生
信号の品位が低下したり、更に磁気テープ等ヘッドと接
触しながら記録再生を行なうメモリの場合には摺動によ
りa!耗が発生し、光デイスク等ヘッドと非接触にて記
録再生を行なうメモリの場合には合焦のためのフォーカ
シング制御が必要となり該制御が不十分なために記録再
生信号の品位が低下したりするという問題が生じている
However, in recent years, as there has been a demand for increasingly higher recording densities, tracking control to make the head accurately follow the information track has become more complex, and the quality of recorded and reproduced signals may deteriorate due to insufficient control. The quality of recorded and reproduced signals deteriorates due to vibrations in the head moving mechanism and dust adhering to the surface of the memory.Furthermore, in the case of a memory that performs recording and reproduction while in contact with the head, such as a magnetic tape, sliding causes a! In the case of a memory that performs recording and reproduction without contact with the head, such as an optical disk, focusing control is required, and if this control is insufficient, the quality of the recording and reproduction signal may deteriorate. There is a problem of doing so.

これに対し、磁気バブルメモリは、所定の位置にて情報
の記録を行ない該記録情報を転送することができ且つ情
報を転送しながら所定の位置にて情報を再生することが
でき記録再生に際しヘッドとの相対的移動を必要とせず
、このため記Qc11.度の高度化に際しても上記の様
な問題を生ずることがなく、高@頼性を実現することが
できると考えられている。
On the other hand, magnetic bubble memory can record information at a predetermined position and transfer the recorded information, and can reproduce information at a predetermined position while transferring the information. There is no need for relative movement with Qc11. It is believed that the above-mentioned problems will not occur even when the technology becomes more sophisticated, and high reliability can be achieved.

ところで、磁気バブルメモリにおいては、磁性薄膜中に
適宜磁気バブルを発生させるためにバブル発生器が設け
られている。
Incidentally, in a magnetic bubble memory, a bubble generator is provided to appropriately generate magnetic bubbles in a magnetic thin film.

第4図に従来の磁気バブルメモリにおけるバブル発生器
の一例を示す、第4図(a)は部分Y面図であり、第4
図(b)はそのB−B断面図である。
FIG. 4 shows an example of a bubble generator in a conventional magnetic bubble memory. FIG. 4(a) is a partial Y-plane view;
Figure (b) is the BB sectional view.

図において、2はGGG 、NdGG等の非磁性ガーネ
ットからなる基板であり、該基板上には磁性ガーネット
薄膜4が付与されている。該膜は、たとえば液相エピタ
キシャル成長法(LPE法)により成膜することができ
、その厚さはたとえば5pm程度である。外部からは上
向きのバイアス磁界HBが印加されており、磁性薄膜4
は矢印Xで示される様に上向きに磁化されている。
In the figure, 2 is a substrate made of non-magnetic garnet such as GGG, NdGG, etc., and a magnetic garnet thin film 4 is provided on the substrate. The film can be formed by, for example, a liquid phase epitaxial growth method (LPE method), and its thickness is, for example, about 5 pm. An upward bias magnetic field HB is applied from the outside, and the magnetic thin film 4
is magnetized upward as shown by arrow X.

磁性薄膜4上にはヘアピン形状部分をもつ導体パターン
6が付与されている。該導体パターンはたとえばAl−
Cu、Au/Mo等からなる。上記バイアス磁界HBの
大きさを通出な値とし、更に導体パターン6に矢印の向
きに通出な大きさのパルスを流IGを流すと、導体パタ
ーン6のヘアピン形状部分に対応する磁性薄膜4の部分
に下向きの局所磁界が印加され、該磁界により磁性g膜
4の磁化の向きが反転し矢印Yで示される様に下向きと
なり、かくして磁気バブル8が生ぜしめられる。
A conductor pattern 6 having a hairpin-shaped portion is provided on the magnetic thin film 4. The conductor pattern is made of, for example, Al-
It is made of Cu, Au/Mo, etc. When the magnitude of the bias magnetic field HB is set to a positive value and a pulse of a positive magnitude is applied to the conductor pattern 6 in the direction of the arrow, the magnetic thin film 4 corresponding to the hairpin-shaped portion of the conductor pattern 6 is applied. A downward local magnetic field is applied to the portion, and the magnetic field reverses the direction of magnetization of the magnetic g film 4 so that it becomes downward as shown by arrow Y, thus generating a magnetic bubble 8.

しかして、以上の様な従来の磁気バブル発生器では磁気
バブルを発生させるためにかなり大きな消費電力を必要
としていた。
However, the conventional magnetic bubble generators described above require considerably large power consumption in order to generate magnetic bubbles.

そこで1本発明は1以上の様な従来の磁気バブルメモリ
のバブル発生器における問題点を解決し、低消費電力の
バブル発生器を提供することを目的とする。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve one or more problems in conventional bubble generators for magnetic bubble memories, and to provide a bubble generator with low power consumption.

[問題点を解決するための手段] 本発明によれば、以上の如き目的を達成するものとして
、磁性薄膜中の磁気バブル奢用いて情報の記録を行なう
磁気バブルメモリのバブル発生器において、磁性薄膜上
に該磁性薄膜の膜面にほぼ垂直な磁気バブル発生用局所
磁界を生ぜしめるための通電パターンが形成されており
、該通電パターンが発熱抵抗体からなることを#徴とす
る、磁気バブルメモリのバブル発生器が提供される。
[Means for Solving the Problems] According to the present invention, in order to achieve the above-mentioned objects, in a bubble generator of a magnetic bubble memory that records information using magnetic bubbles in a magnetic thin film, a magnetic bubble generator is provided. A magnetic bubble characterized in that an energizing pattern is formed on the thin film to generate a local magnetic field for generating magnetic bubbles that is substantially perpendicular to the surface of the magnetic thin film, and the energizing pattern is made of a heating resistor. A memory bubble generator is provided.

[実施例] 以下、図面を参照しながら本発明の具体的実施例を説明
する。
[Example] Hereinafter, specific examples of the present invention will be described with reference to the drawings.

第1図(a)は本発明による磁気バブルメモリのバブル
発生器の部分平面図であり、第1図(b)はそのB−B
断面図である。
FIG. 1(a) is a partial plan view of the bubble generator of the magnetic bubble memory according to the present invention, and FIG. 1(b) is a partial plan view of the bubble generator of the magnetic bubble memory according to the present invention.
FIG.

第1図において、2は非磁性ガーネット基板であり、4
は磁性ガーネット%ilNである。外部からは上向きの
バイアス磁界HBが印加されており、磁性薄115!4
は矢印Xで示される様に上向きに磁化されている。
In FIG. 1, 2 is a non-magnetic garnet substrate, and 4 is a non-magnetic garnet substrate.
is magnetic garnet %ilN. An upward bias magnetic field HB is applied from the outside, and the magnetic thin 115!4
is magnetized upward as shown by arrow X.

磁性薄膜4上には磁気バブル発生用の局所磁界を生ぜし
めるための通電パターンであるヘアピン形状の発熱抵抗
体パターン5が付与されている。
A hairpin-shaped heating resistor pattern 5 is provided on the magnetic thin film 4 as an energization pattern for generating a local magnetic field for generating magnetic bubbles.

該発熱抵抗体としてはたとえばHfB2が用いられ、そ
の厚さはたとえばO,17zm程度であり、その比抵抗
値はたとえば270ルΩφCm程度である(ちなみにA
Iは2.5ルΩ*cmである)。
For example, HfB2 is used as the heating resistor, and its thickness is, for example, about 0.17 zm, and its specific resistance value is, for example, about 270 ΩφCm (by the way, A
I is 2.5 Ω*cm).

発熱抵抗体パターン5の両端には電圧印加のための配線
導体パターン6が接続されている。該導体パターンとし
ては上記第4図に関し説明したA1−Cu、Au/Mo
等の導体が用いられ、その厚さはたとえばlpm程度で
ある。
Wiring conductor patterns 6 for voltage application are connected to both ends of the heating resistor pattern 5. The conductor pattern is A1-Cu, Au/Mo, which was explained with reference to FIG. 4 above.
A conductor such as the above is used, and its thickness is, for example, about lpm.

本実施例においても、上記従来の磁気バブル発生器と同
様に、上記バイアス磁界HBの大きさを適当な値とし、
更に導体パターン6を介して発熱抵抗体パターン5に矢
印の向きに適当な大きさのパルス電11.IGを流すと
、該発熱抵抗体パターンに対応する磁性釣設4の部分に
下向きの局所磁界が印加され、該磁界により磁性薄膜4
の磁化の向ぎが反転し矢印Yで示される様に下向きとな
り、かくして磁気バブル8が生ぜしめられる。
In this embodiment as well, similarly to the conventional magnetic bubble generator, the magnitude of the bias magnetic field HB is set to an appropriate value,
Furthermore, a pulsed electric current 11 of an appropriate size is applied to the heating resistor pattern 5 through the conductor pattern 6 in the direction of the arrow. When IG is applied, a downward local magnetic field is applied to the part of the magnetic hook 4 corresponding to the heating resistor pattern, and the magnetic thin film 4 is
The direction of magnetization is reversed and becomes downward as shown by arrow Y, thus generating a magnetic bubble 8.

ところで、上記パルス電流IGの印加により磁気バブル
が発生するために必要な該電流値は(Hk−4πM s
 )に比例する。ここでHkは異方性磁界でありMsは
磁性薄膜4の飽和磁化である。
By the way, the current value necessary for generating a magnetic bubble by applying the pulse current IG is (Hk-4πM s
) is proportional to Here, Hk is the anisotropic magnetic field and Ms is the saturation magnetization of the magnetic thin film 4.

第2図に磁性fJ膜として(YSmLuCa)3(Fe
Ge)501zを用いた場合の上記Hk及び4πMsの
温度変化のグラフを示す0図から分る様に、温度上昇と
ともにHk及び4πMsはいづれも減少するが、Hkの
減少率は4τMsの減少率に比べて極めて大きいので(
Hk−4πM s )は温度上昇とともに急激に低下す
る。
Figure 2 shows (YSmLuCa)3(Fe) as a magnetic fJ film.
As can be seen from Figure 0, which shows the temperature change graph of Hk and 4πMs when using Ge) 501z, both Hk and 4πMs decrease as the temperature increases, but the rate of decrease in Hk is at a rate of decrease of 4τMs. It is extremely large compared to (
Hk-4πM s ) decreases rapidly as the temperature rises.

第3図に以上の様な磁気バブル発生に必要な電流値IG
の温度変化のグラフを示す、第3図には発熱抵抗体パタ
ーン5の抵抗値R1と該パターンに流れる電流値■1と
発熱温度Tとの関係をも示す0発熱抵抗体パターン5の
抵抗値R1は大きいので、磁気バブル発生に必要な電流
値IGのグラフと電流値11のグラフとの交点の電流値
11は比較的小さい。
Figure 3 shows the current value IG required to generate the above magnetic bubble.
3 shows a graph of the temperature change of the heat generating resistor pattern 5, and also shows the relationship between the resistance value R1 of the heat generating resistor pattern 5, the current value 1 flowing through the pattern, and the heat generating temperature T. Since R1 is large, the current value 11 at the intersection of the graph of the current value IG necessary for magnetic bubble generation and the graph of the current value 11 is relatively small.

第3図には本実施例の発熱抵抗体パターン5のかわりに
上記第4図の様な導体パターン6(抵抗値R2)を使用
した場合の該抵抗値R2と該導体パターン6に流れる電
流値I2と発熱温度Tとの関係をも示す、この場合は導
体パターン6の抵抗値R2は極めて小さいので、磁気バ
ブル発生に必要な電流値IGのグラフと電流値I2のグ
ラフとの交点の電流値12は比較的大きい。
FIG. 3 shows the resistance value R2 and the current value flowing through the conductor pattern 6 when the conductor pattern 6 (resistance value R2) as shown in FIG. 4 is used instead of the heating resistor pattern 5 of this embodiment. It also shows the relationship between I2 and the heat generation temperature T. In this case, since the resistance value R2 of the conductor pattern 6 is extremely small, the current value at the intersection of the graph of the current value IG necessary for magnetic bubble generation and the graph of the current value I2 12 is relatively large.

以上の様に、磁性薄膜4の膜面にほぼ垂直な磁気バブル
発生用局所磁界を生ぜしめるための通電パターンとして
発熱抵抗体パターン5を用いることにより小さな電流で
磁気バブルを発生させることができる。
As described above, magnetic bubbles can be generated with a small current by using the heat generating resistor pattern 5 as a conduction pattern for generating a local magnetic field for generating magnetic bubbles that is substantially perpendicular to the film surface of the magnetic thin film 4.

[発明の効果] 以上の様な本発明によれば、磁気バブル発生用の局所磁
界を生ぜしめるための電流印加時に通電パターンが発熱
して磁性薄膜の温度が上昇するので、磁気バブルを発生
させるための′屯流イ4が小さくてよく、従って消費電
力を低減することができる。
[Effects of the Invention] According to the present invention as described above, when a current is applied to generate a local magnetic field for generating magnetic bubbles, the energization pattern generates heat and the temperature of the magnetic thin film increases, so that magnetic bubbles are generated. The current 4 for this purpose can be small, and therefore power consumption can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明の磁気バブル発生器の部分平面図
であり、第1図(b)はそのB−B断面図である。 第2図及び第3図は磁気バブル発生器の特性を示すグラ
フである。 第4図(a)は磁気バブル発生器の部分平面図であり、
第4図(b)はそのB−B断面図である。 2:基板、    4:磁性薄膜、 5:発熱抵抗体パターン、 6:導体パターン、 8:磁気バブル。 代理人  弁理士  山 下 穣 平 第1図(Q) @1    図  (bン 第2図 (七   壜屓C6゜ 第3図 第4図(Q) 第4図(b)
FIG. 1(a) is a partial plan view of the magnetic bubble generator of the present invention, and FIG. 1(b) is a sectional view taken along line BB. 2 and 3 are graphs showing the characteristics of the magnetic bubble generator. FIG. 4(a) is a partial plan view of the magnetic bubble generator,
FIG. 4(b) is a sectional view taken along line B-B. 2: Substrate, 4: Magnetic thin film, 5: Heat generating resistor pattern, 6: Conductor pattern, 8: Magnetic bubble. Agent Patent Attorney Jo Yamashita Figure 1 (Q) @1 Figure (b) Figure 2 (7 Figure C6゜Figure 3 Figure 4 (Q) Figure 4 (b)

Claims (2)

【特許請求の範囲】[Claims] (1)磁性薄膜中の磁気バブルを用いて情報の記録を行
なう磁気バブルメモリのバブル発生器において、磁性薄
膜上に該磁性薄膜の膜面にほぼ垂直な磁気バブル発生用
局所磁界を生ぜしめるための通電パターンが形成されて
おり、該通電パターンが発熱抵抗体からなることを特徴
とする、磁気バブルメモリのバブル発生器。
(1) In a bubble generator for a magnetic bubble memory that records information using magnetic bubbles in a magnetic thin film, to generate a local magnetic field for generating magnetic bubbles on the magnetic thin film that is almost perpendicular to the surface of the magnetic thin film. 1. A bubble generator for a magnetic bubble memory, characterized in that an energizing pattern is formed, and the energizing pattern is made of a heating resistor.
(2)通電パターンがヘアピン形状をなしている、特許
請求の範囲第1項の磁気バブルメモリのバブル発生器。
(2) A bubble generator for a magnetic bubble memory according to claim 1, wherein the energization pattern has a hairpin shape.
JP18675786A 1986-08-11 1986-08-11 Bubble generator for magnetic bubble memory Pending JPS6344397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18675786A JPS6344397A (en) 1986-08-11 1986-08-11 Bubble generator for magnetic bubble memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18675786A JPS6344397A (en) 1986-08-11 1986-08-11 Bubble generator for magnetic bubble memory

Publications (1)

Publication Number Publication Date
JPS6344397A true JPS6344397A (en) 1988-02-25

Family

ID=16194106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18675786A Pending JPS6344397A (en) 1986-08-11 1986-08-11 Bubble generator for magnetic bubble memory

Country Status (1)

Country Link
JP (1) JPS6344397A (en)

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