JPS6341618Y2 - - Google Patents

Info

Publication number
JPS6341618Y2
JPS6341618Y2 JP1982195803U JP19580382U JPS6341618Y2 JP S6341618 Y2 JPS6341618 Y2 JP S6341618Y2 JP 1982195803 U JP1982195803 U JP 1982195803U JP 19580382 U JP19580382 U JP 19580382U JP S6341618 Y2 JPS6341618 Y2 JP S6341618Y2
Authority
JP
Japan
Prior art keywords
photodetector
semiconductor laser
output
light
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982195803U
Other languages
Japanese (ja)
Other versions
JPS59104334U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19580382U priority Critical patent/JPS59104334U/en
Publication of JPS59104334U publication Critical patent/JPS59104334U/en
Application granted granted Critical
Publication of JPS6341618Y2 publication Critical patent/JPS6341618Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は光情報を再生するピツクアツプ装置の
光源たる半導体レーザの出力の制御と、光信号の
検出を1個の光検出器で行うものである。
[Detailed Description of the Invention] The present invention uses a single photodetector to control the output of a semiconductor laser, which is a light source of a pickup device that reproduces optical information, and to detect an optical signal.

従来の光情報を再生するピツクアツプは第1図
に示すように、支持部材1に取り付けた半導体レ
ーザ2の出力を、この支持部材1に取付けられた
出力モニタ用光検出器3で受光し、この出力をオ
ートマチツク、パワー、コントロール回路4によ
つて半導体レーザ2をコントロールすると共に、
半導体レーザ1の出力はハーフプリズム5を介し
集光レンズ6で記録材7上に焦点を結ばせ、その
反射光をハーフプリズム5で信号検出用の光検出
器8に導き、増幅器9で電気信号として取り出さ
れる。
As shown in FIG. 1, a conventional pickup for reproducing optical information receives the output of a semiconductor laser 2 attached to a support member 1 with an output monitoring photodetector 3 attached to this support member 1. The semiconductor laser 2 is controlled by an automatic output power control circuit 4, and
The output of the semiconductor laser 1 is focused on a recording material 7 by a condensing lens 6 via a half prism 5, and the reflected light is guided by the half prism 5 to a photodetector 8 for signal detection, and an electric signal is converted by an amplifier 9. is extracted as.

従つて光検出器は信号検出用8と半導体レーザ
2の出力モニタ用3の2個が必要であり、ために
これ等は別々に調整することが必要とし、且つ記
録材7の反射率の違い、その他によつて得られる
出力の大きさが変化するために、反射率の低下し
た記録材7の読み取りの誤り率が増大する上、構
成も高価になる等の欠点があつた。
Therefore, two photodetectors are required, 8 for signal detection and 3 for monitoring the output of the semiconductor laser 2, and these need to be adjusted separately. , etc., the error rate in reading the recording material 7 with reduced reflectance increases, and the structure becomes expensive.

本考案はこのような欠点を除去するために光検
出器を1個としてこれに半導体レーザの出力モニ
タと信号検出を行なわさせ、これを回路によつて
それぞれに分離し、信号出力を得ると共に半導体
レーザのコントロールを行つて安定した信号出力
の得られる安価なピツクアツプ装置を得ることを
目的とする。
In order to eliminate such drawbacks, the present invention uses a single photodetector to monitor the output of the semiconductor laser and detect the signal, and separates these using a circuit to obtain the signal output and detect the output of the semiconductor laser. The object of the present invention is to obtain an inexpensive pickup device that can obtain stable signal output by controlling a laser.

本考案の一実施例を第2図、乃至第8図に就い
て説明すれば、支持部材11に半導体レーザ12
と光検出器13を取り付けると共に、半導体レー
ザ12よりの入射光量が適正量となるように支持
部材11に減衰材14を塗付する。
An embodiment of the present invention will be described with reference to FIGS. 2 to 8. A semiconductor laser 12 is mounted on a support member 11.
and a photodetector 13 are attached, and an attenuating material 14 is applied to the support member 11 so that the amount of incident light from the semiconductor laser 12 is appropriate.

一方半導体レーザ12の出力は光偏向分割素子
15により所定角度曲げられ、集光レンズ16に
よつて記録材7上に焦点を結び、その反射光は集
光レンズ16で集光されて光偏向分割素子15に
至るが、光偏向分割素子15は半導体レーザ12
から直接出射した時の偏向方向と逆の角度にも所
定角度偏向させて光検出器13に導かれ、この時
の像の焦点は半導体レーザ12と光検出器13の
位置のずれだけ焦点がずれて広がつている。
On the other hand, the output of the semiconductor laser 12 is bent by a predetermined angle by an optical deflection splitting element 15, and focused onto the recording material 7 by a condensing lens 16. The optical deflection splitting element 15 is connected to the semiconductor laser 12.
The laser beam is deflected by a predetermined angle in the opposite direction to the direction of deflection when it is directly emitted, and is guided to the photodetector 13, and the focal point of the image at this time is shifted by the positional deviation between the semiconductor laser 12 and the photodetector 13. It is spreading.

そこで光検出器13の形状としては1ビームト
ラツキングを行う場合、例えば焦点検出を同心円
デテクタを利用し、トラツキング検出にはプツシ
ユプル法を用いる。
Therefore, as for the shape of the photodetector 13, when performing one-beam tracking, for example, a concentric circle detector is used for focus detection, and a push-pull method is used for tracking detection.

即ち第4図のような光検出器を半導体レーザ1
2の後部に取付け、半導体レーザ12とこの光検
出器13の距離の差だけ焦点の広がつた光を受光
させ、光検出器13の同心円上の強度のバランス
を取り、その値からのズレ量としてフオーカスエ
ラー信号を得る。即ちフオーカスが近い場合には
中心部に入射する光量が増え、フオーカスが遠い
場合には外周部に入射する光量が増加する。
That is, a photodetector as shown in FIG.
Attached to the rear of the photodetector 2, it receives light whose focal point is widened by the difference in distance between the semiconductor laser 12 and this photodetector 13, balances the intensity on the concentric circle of the photodetector 13, and calculates the amount of deviation from that value. The focus error signal is obtained as follows. That is, when the focus is close, the amount of light incident on the center increases, and when the focus is far, the amount of light incident on the outer periphery increases.

更にトラツキングは同心円の右と左のプツシユ
プルによりエラー量を得るもので、例えば内心部
の右左のデテクタについてバイアス信号を下げる
ことによりこのデテクタの周波数特性を高域で落
とし、半導体レーザのコントロールに必要な値を
得ることができる。
Furthermore, tracking obtains the error amount by push-pull on the right and left of the concentric circle. For example, by lowering the bias signal for the right and left detectors in the inner core, the frequency characteristics of these detectors are lowered in the high range, which is necessary for controlling the semiconductor laser. value can be obtained.

或いは同心円の外径に大きなものを使用するこ
とによつて、周波数特性を高域で下げ、半導体レ
ーザのコントロールに必要な値を得ることもでき
る。
Alternatively, by using a concentric circle with a large outer diameter, the frequency characteristics can be lowered in the high range and a value necessary for controlling the semiconductor laser can be obtained.

斯くして得られた光検出器13の出力は初段増
幅器17で増幅され、周波数フイルタ18により
信号周波数帯域、サーボ周波数帯域、及びレーザ
駆動用の低周波帯域に分離され、これ等は信号復
調回路19、焦点、トラツキングのサーボ回路2
0、レーザ駆動回路21に送られる。
The output of the photodetector 13 obtained in this way is amplified by the first stage amplifier 17, and separated by the frequency filter 18 into a signal frequency band, a servo frequency band, and a low frequency band for laser driving, which are connected to a signal demodulation circuit. 19. Focus and tracking servo circuit 2
0, sent to the laser drive circuit 21.

この周波数フイルタは、デテクタの形状および
バイアス電流を適当に選ぶことにより、さらに単
純な構成とすることが可能である。
This frequency filter can be made even simpler by appropriately selecting the shape of the detector and the bias current.

レーザ駆動回路21に送られる低周波帯域は、
記録された信号帯域の影響を受けない低い帯域で
あり、従つて半導体レーザの駆動電流が記録され
た信号によつて変調を受けることがなく、しかし
ながら記録材7からの反射光量によつて半導体レ
ーザの駆動電流は変化するが、この関係は例えば
第7図のように設定する。
The low frequency band sent to the laser drive circuit 21 is
This is a low band that is not affected by the recorded signal band, and therefore the driving current of the semiconductor laser is not modulated by the recorded signal. Although the driving current changes, this relationship is set as shown in FIG. 7, for example.

第7図に於てPは半導体レーザ12の最大定格
をこえない光量、Qは必要な信号SN比を得られ
る最低光量より大きい量である。
In FIG. 7, P is an amount of light that does not exceed the maximum rating of the semiconductor laser 12, and Q is an amount that is greater than the minimum amount of light that can obtain the required signal-to-noise ratio.

この場合光検出器13への入射光量の総和は、
第8図に示すように半導体レーザ12から直接入
射する光量Rと、記録材7からの反射された光量
Sとで常に一定となるものである。
In this case, the total amount of light incident on the photodetector 13 is:
As shown in FIG. 8, the amount R of light directly incident from the semiconductor laser 12 and the amount S of light reflected from the recording material 7 are always constant.

なおトラツキング検出に3ビーム法を用いる場
合には光検出器は第5図のようになり、この場合
トラツキングエラーは(Aの出力)−(Bの出力)
で得られ、(Aの出力)+(Bの出力)は大きな変
調を受けないので、これを一定するように半導体
レーザの駆動電流を制御することによつて所望の
結果が得られる。
In addition, when using the three-beam method for tracking detection, the photodetector becomes as shown in Figure 5, and in this case, the tracking error is (output of A) - (output of B)
Since (output of A)+(output of B) is not significantly modulated, the desired result can be obtained by controlling the drive current of the semiconductor laser to keep it constant.

尚第5図に於てCはトラツキングエラーの出力
を、Dは半導体レーザの出力設定回路を、Eは半
導体レーザドライブ出力を示す。
In FIG. 5, C indicates a tracking error output, D indicates a semiconductor laser output setting circuit, and E indicates a semiconductor laser drive output.

又前記実施例に於ては半導体レーザ12と光検
出器13の位置は、正対の位置に置かれているが
これを斜めの位置に変え、その位置と角度により
半導体レーザ12からの光量と記録材7からの光
量の比率を決定することも可能である。
Further, in the above embodiment, the semiconductor laser 12 and the photodetector 13 are placed directly opposite each other, but this is changed to an oblique position, and the amount of light from the semiconductor laser 12 is changed depending on the position and angle. It is also possible to determine the ratio of the amount of light from the recording material 7.

更に減衰材14を使用せず、この部分の半導体
レーザ12に対する角度によつて光検出器13へ
の入射光量を変えて記録材7からの反射光量との
比率を決定することもできる。
Furthermore, the ratio of the amount of light incident on the photodetector 13 to the amount of reflected light from the recording material 7 can be determined by changing the amount of light incident on the photodetector 13 depending on the angle of this portion with respect to the semiconductor laser 12 without using the attenuation material 14.

叙上のように本考案によれば、1個の光検出器
によつて半導体レーザの出力コントロールと信号
電流を検出するものであるから、記録材の反射率
の低下等によつて光検出器に入る信号量が低下し
た場合には、それに対応して半導体レーザの出力
が上げられるので、常に良質の信号を得ることが
できると共に、過大な出力による半導体レーザの
破壊を未然に防止することができるものである。
As mentioned above, according to the present invention, since a single photodetector is used to control the output of the semiconductor laser and detect the signal current, the photodetector is If the amount of input signal decreases, the output of the semiconductor laser is increased accordingly, making it possible to always obtain a high-quality signal and preventing damage to the semiconductor laser due to excessive output. It is possible.

更に半導体レーザの近くに光検出器を置き、支
持部材を共用することによつて調整が容易にな
り、更に十分大きな信号が得られる場合には、半
導体レーザの出力を下げるように作用するので、
レーザ素子の信頼性を向上することとなり、又光
検出器が1個で足りるので、廉価である等の効果
があるものである。
Furthermore, by placing the photodetector near the semiconductor laser and sharing the support member, adjustment becomes easier, and if a sufficiently large signal is obtained, it acts to lower the output of the semiconductor laser.
This improves the reliability of the laser element, and since only one photodetector is required, the cost is low.

【図面の簡単な説明】[Brief description of the drawings]

第1図は従来の光ピツクアツプ装置の原理図、
第2図は本考案の一実施例の原理図、第3図はそ
の半導体レーザ、光検出器部分の拡大図、第4図
は光検出器の一例を示す正面図、第5図は別の光
検出器を含む回路図、第6図は第2図の実施例の
電気回路の概念図、第7図は記録材からの反射光
量と半導体レーザの発振光量の関係を示し、第8
図は記録材の反射率と検出器への入射光の関係を
示すものである。 7……記録材、12………半導体レーザ、13
……光検出器、15……光偏向分割素子、17…
…初段増幅器、18……周波数フイルタ。
Figure 1 is a diagram of the principle of a conventional optical pickup device.
Fig. 2 is a principle diagram of one embodiment of the present invention, Fig. 3 is an enlarged view of the semiconductor laser and photodetector portion, Fig. 4 is a front view showing an example of the photodetector, and Fig. 5 is another one. 6 is a conceptual diagram of the electric circuit of the embodiment shown in FIG. 2, FIG. 7 shows the relationship between the amount of reflected light from the recording material and the amount of oscillated light from the semiconductor laser, and FIG.
The figure shows the relationship between the reflectance of the recording material and the incident light on the detector. 7... Recording material, 12... Semiconductor laser, 13
...Photodetector, 15...Light deflection splitting element, 17...
...First stage amplifier, 18...Frequency filter.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザからの出射光を情報記録媒体上に
照射してその反射光を光検出器で検出することに
より情報を再生する光学式のピツクアツプ装置に
おいて、前記光検出器に前記反射光と共に前記情
報記録媒体を経由しない前記半導体レーザからの
直接光を入射させる光学系を設け、かつ、前記光
検出器の出力の少なくとも低周波成分を、前記光
検出器に入射される光量が一定となるように駆動
するレーザ駆動回路に送出するための周波数フイ
ルタを設けたことを特徴とするピツクアツプ装
置。
In an optical pickup device that reproduces information by irradiating light emitted from a semiconductor laser onto an information recording medium and detecting the reflected light with a photodetector, the information recording medium is sent to the photodetector together with the reflected light. An optical system is provided that allows direct light from the semiconductor laser to enter without passing through a medium, and at least a low frequency component of the output of the photodetector is driven so that the amount of light incident on the photodetector is constant. 1. A pick-up device characterized by being provided with a frequency filter for transmitting data to a laser drive circuit.
JP19580382U 1982-12-28 1982-12-28 pick up device Granted JPS59104334U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19580382U JPS59104334U (en) 1982-12-28 1982-12-28 pick up device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19580382U JPS59104334U (en) 1982-12-28 1982-12-28 pick up device

Publications (2)

Publication Number Publication Date
JPS59104334U JPS59104334U (en) 1984-07-13
JPS6341618Y2 true JPS6341618Y2 (en) 1988-11-01

Family

ID=30420371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19580382U Granted JPS59104334U (en) 1982-12-28 1982-12-28 pick up device

Country Status (1)

Country Link
JP (1) JPS59104334U (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263793A (en) * 1975-11-21 1977-05-26 Pioneer Electronic Corp Optical signal reader
JPS5465007A (en) * 1977-11-02 1979-05-25 Matsushita Electric Ind Co Ltd Disc form recording carrier reader
JPS5724033A (en) * 1980-07-18 1982-02-08 Sharp Corp Pickup device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263793A (en) * 1975-11-21 1977-05-26 Pioneer Electronic Corp Optical signal reader
JPS5465007A (en) * 1977-11-02 1979-05-25 Matsushita Electric Ind Co Ltd Disc form recording carrier reader
JPS5724033A (en) * 1980-07-18 1982-02-08 Sharp Corp Pickup device

Also Published As

Publication number Publication date
JPS59104334U (en) 1984-07-13

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