JPS6341384B2 - - Google Patents
Info
- Publication number
- JPS6341384B2 JPS6341384B2 JP55017738A JP1773880A JPS6341384B2 JP S6341384 B2 JPS6341384 B2 JP S6341384B2 JP 55017738 A JP55017738 A JP 55017738A JP 1773880 A JP1773880 A JP 1773880A JP S6341384 B2 JPS6341384 B2 JP S6341384B2
- Authority
- JP
- Japan
- Prior art keywords
- catalyst
- reaction
- formamide
- diformamide
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003054 catalyst Substances 0.000 claims description 34
- -1 N-monosubstituted formamide Chemical class 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 150000002825 nitriles Chemical class 0.000 claims description 17
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical group O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 35
- 229910052757 nitrogen Inorganic materials 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- AIDQCFHFXWPAFG-UHFFFAOYSA-N n-formylformamide Chemical compound O=CNC=O AIDQCFHFXWPAFG-UHFFFAOYSA-N 0.000 description 8
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 6
- 150000003141 primary amines Chemical class 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- RFFFKMOABOFIDF-UHFFFAOYSA-N Pentanenitrile Chemical compound CCCCC#N RFFFKMOABOFIDF-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- QQGNLKJAIVSNCO-UHFFFAOYSA-N N-butylformamide Chemical compound CCCCNC=O QQGNLKJAIVSNCO-UHFFFAOYSA-N 0.000 description 4
- SWGXDLRCJNEEGZ-UHFFFAOYSA-N N-cyclohexylformamide Chemical compound O=CNC1CCCCC1 SWGXDLRCJNEEGZ-UHFFFAOYSA-N 0.000 description 4
- 150000003948 formamides Chemical class 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- DYDNPESBYVVLBO-UHFFFAOYSA-N formanilide Chemical compound O=CNC1=CC=CC=C1 DYDNPESBYVVLBO-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002527 isonitriles Chemical class 0.000 description 3
- PFBAGGWJGZAGCG-UHFFFAOYSA-N n,n-diformylformamide Chemical compound O=CN(C=O)C=O PFBAGGWJGZAGCG-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 2
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 2
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 2
- 239000004472 Lysine Substances 0.000 description 2
- IIBOGKHTXBPGEI-UHFFFAOYSA-N N-benzylformamide Chemical compound O=CNCC1=CC=CC=C1 IIBOGKHTXBPGEI-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 235000003704 aspartic acid Nutrition 0.000 description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 2
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000004494 ethyl ester group Chemical group 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 235000013922 glutamic acid Nutrition 0.000 description 2
- 239000004220 glutamic acid Substances 0.000 description 2
- 150000008282 halocarbons Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- NHTXRWUMLXSOGJ-UHFFFAOYSA-N n-hexylformamide Chemical compound CCCCCCNC=O NHTXRWUMLXSOGJ-UHFFFAOYSA-N 0.000 description 2
- YLYBTZIQSIBWLI-UHFFFAOYSA-N octyl acetate Chemical compound CCCCCCCCOC(C)=O YLYBTZIQSIBWLI-UHFFFAOYSA-N 0.000 description 2
- SUSQOBVLVYHIEX-UHFFFAOYSA-N phenylacetonitrile Chemical compound N#CCC1=CC=CC=C1 SUSQOBVLVYHIEX-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004474 valine Substances 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- DLKQHBOKULLWDQ-UHFFFAOYSA-N 1-bromonaphthalene Chemical compound C1=CC=C2C(Br)=CC=CC2=C1 DLKQHBOKULLWDQ-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- HMJBXEZHJUYJQY-UHFFFAOYSA-N 4-(aminomethyl)octane-1,8-diamine Chemical compound NCCCCC(CN)CCCN HMJBXEZHJUYJQY-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CEQGYPPMTKWBIU-UHFFFAOYSA-N Octyl propanoate Chemical compound CCCCCCCCOC(=O)CC CEQGYPPMTKWBIU-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- BTGRAWJCKBQKAO-UHFFFAOYSA-N adiponitrile Chemical compound N#CCCCCC#N BTGRAWJCKBQKAO-UHFFFAOYSA-N 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- SDAXRHHPNYTELL-UHFFFAOYSA-N heptanenitrile Chemical compound CCCCCCC#N SDAXRHHPNYTELL-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SJOGFIHPHWLDSP-UHFFFAOYSA-N n-(1h-inden-1-yl)formamide Chemical compound C1=CC=C2C(NC=O)C=CC2=C1 SJOGFIHPHWLDSP-UHFFFAOYSA-N 0.000 description 1
- YCRJHNKOUDYKMZ-UHFFFAOYSA-N n-(2,2-dimethylpropyl)formamide Chemical compound CC(C)(C)CNC=O YCRJHNKOUDYKMZ-UHFFFAOYSA-N 0.000 description 1
- NBNDPGGJEJRDBJ-UHFFFAOYSA-N n-(2-formamidoethyl)formamide Chemical compound O=CNCCNC=O NBNDPGGJEJRDBJ-UHFFFAOYSA-N 0.000 description 1
- ZXTLGJAARBNQGK-UHFFFAOYSA-N n-(2-methylphenyl)formamide Chemical compound CC1=CC=CC=C1NC=O ZXTLGJAARBNQGK-UHFFFAOYSA-N 0.000 description 1
- XCTTVNSXEHWZBI-UHFFFAOYSA-N n-(2-methylpropyl)formamide Chemical compound CC(C)CNC=O XCTTVNSXEHWZBI-UHFFFAOYSA-N 0.000 description 1
- NOOOMJZHMKSKBF-UHFFFAOYSA-N n-(2-phenylethyl)formamide Chemical compound O=CNCCC1=CC=CC=C1 NOOOMJZHMKSKBF-UHFFFAOYSA-N 0.000 description 1
- KDLCQMBNDVZRKM-UHFFFAOYSA-N n-(4-formamidophenyl)formamide Chemical compound O=CNC1=CC=C(NC=O)C=C1 KDLCQMBNDVZRKM-UHFFFAOYSA-N 0.000 description 1
- HNHVTXYLRVGMHD-UHFFFAOYSA-N n-butyl isocyanate Chemical compound CCCCN=C=O HNHVTXYLRVGMHD-UHFFFAOYSA-N 0.000 description 1
- AWIIFLDEDWAYGJ-UHFFFAOYSA-N n-cyclohexyl-n-methylformamide Chemical compound O=CN(C)C1CCCCC1 AWIIFLDEDWAYGJ-UHFFFAOYSA-N 0.000 description 1
- WYLHQTSQMKMTGM-UHFFFAOYSA-N n-cyclopentylformamide Chemical compound O=CNC1CCCC1 WYLHQTSQMKMTGM-UHFFFAOYSA-N 0.000 description 1
- ZNCRMMYZWDNTCE-UHFFFAOYSA-N n-decylformamide Chemical compound CCCCCCCCCCNC=O ZNCRMMYZWDNTCE-UHFFFAOYSA-N 0.000 description 1
- TYCXRAVZVQSHSC-UHFFFAOYSA-N n-dodecylformamide Chemical compound CCCCCCCCCCCCNC=O TYCXRAVZVQSHSC-UHFFFAOYSA-N 0.000 description 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 description 1
- YAUHDTOEJHVKJO-UHFFFAOYSA-N n-heptylformamide Chemical compound CCCCCCCNC=O YAUHDTOEJHVKJO-UHFFFAOYSA-N 0.000 description 1
- CGRYTQQVSFZYCI-UHFFFAOYSA-N n-naphthalen-1-ylformamide Chemical compound C1=CC=C2C(NC=O)=CC=CC2=C1 CGRYTQQVSFZYCI-UHFFFAOYSA-N 0.000 description 1
- HEIIJVVALRPNFV-UHFFFAOYSA-N n-nonylformamide Chemical compound CCCCCCCCCNC=O HEIIJVVALRPNFV-UHFFFAOYSA-N 0.000 description 1
- JFBFCFNJBMLUHN-UHFFFAOYSA-N n-octadecylformamide Chemical compound CCCCCCCCCCCCCCCCCCNC=O JFBFCFNJBMLUHN-UHFFFAOYSA-N 0.000 description 1
- ZBWPKQRQZDZVSF-UHFFFAOYSA-N n-octylformamide Chemical compound CCCCCCCCNC=O ZBWPKQRQZDZVSF-UHFFFAOYSA-N 0.000 description 1
- KVTGAKFJRLBHLU-UHFFFAOYSA-N n-propan-2-ylformamide Chemical compound CC(C)NC=O KVTGAKFJRLBHLU-UHFFFAOYSA-N 0.000 description 1
- SUUDTPGCUKBECW-UHFFFAOYSA-N n-propylformamide Chemical compound CCCNC=O SUUDTPGCUKBECW-UHFFFAOYSA-N 0.000 description 1
- NOCSAAHHSOQRCI-UHFFFAOYSA-N n-pyridin-2-ylformamide Chemical compound O=CNC1=CC=CC=N1 NOCSAAHHSOQRCI-UHFFFAOYSA-N 0.000 description 1
- RNKXGTCTNKXYFB-UHFFFAOYSA-N n-quinolin-2-ylformamide Chemical compound C1=CC=CC2=NC(NC=O)=CC=C21 RNKXGTCTNKXYFB-UHFFFAOYSA-N 0.000 description 1
- SDLAKRCBYGZJRW-UHFFFAOYSA-N n-tert-butylformamide Chemical compound CC(C)(C)NC=O SDLAKRCBYGZJRW-UHFFFAOYSA-N 0.000 description 1
- SIMTXFOEYKYLRD-UHFFFAOYSA-N n-undecylformamide Chemical compound CCCCCCCCCCCNC=O SIMTXFOEYKYLRD-UHFFFAOYSA-N 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- MBYLVOKEDDQJDY-UHFFFAOYSA-N tris(2-aminoethyl)amine Chemical compound NCCN(CCN)CCN MBYLVOKEDDQJDY-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Description
本発明は、N−モノ置換ホルムアミドからニト
リルを製造する方法に関するものであり、さらに
詳しくはN−モノ置換ホルムアミドの脱水、転位
により一段でニトリルを製造する方法に関するも
のである。
N−モノ置換ホルムアミドを脱水することによ
つて相当するイソニトリルが得られることは知ら
れているが、直接ニトリルを製造する方法はあま
り知られていなかつた。最近、リンモリブデン酸
ビスマスなどを触媒とするホルムアミドからのニ
トリルの製造方法が報告された(ACS/CSJ
Preprint PETR 82,1979)が、本発明者らもN
−モノ置換ホルムアミドの反応を研究している際
に、高収率、高選択率でニトリルを得る方法を見
出し、本発明に到達した。
すなわち、本発明は、周期律表の第族および
第族金属の酸化物およびシリカゲルから選ばれ
た1種または2種以上から成る触媒および酸素含
有ガスの存在下において、N−モノ置換ホルムア
ミドを300〜600℃の範囲の温度で処理することを
特徴とするホルムアミドからニトリルを製造する
方法である。
本発明の方法をモノホルムアミドについて簡単
に一般式で示すと次のようになる。
RNHCHO(O2)
――→
−H2O〔R−N=C〕→R−C≡N
すなわち、N−モノ置換ホルムアミドが触媒お
よび酸素の存在下で脱水し、恐らく中間体として
イソニトリルを経て、次いでRが転位することに
よつてニトリルを与えているものと考えられる。
この反応は〔 〕内に表わされるイソニトリルを
経由していると考えられるが、一段でホルムアミ
ドから炭素数が同じニトリルが得られることが特
徴である。したがつて、炭素鎖は元のホルムアミ
ドに比べて1個増加することになる。ジホルムア
ミド、トリホルムアミドについてもモノホルムア
ミドと同様な反応が起つているものと思われる。
本発明で触媒として用いられる第族および第
族金属の酸化物およびシリカゲルとしては、
V2O3、VO2、V2O5、NbO、NbO2、Nb2O5、
Ta2O5、Sb2O3、Bi2O3、CrO、Cr2O3、MoO2、
MoO3、WO2、WO3、W2O5、SiO2などが挙げら
れるが、もちろん他の酸化状態の酸化物が含まれ
ていてもよい。これらの金属酸化物は単独で用い
ることもできるし、2種以上組合わせて用いるこ
ともできる。また、これらの金属酸化物に、必要
に応じて触媒として活性でも活性でなくてもよい
他の金属または金属酸化物を加えたものを触媒と
して使用することもできる。
これらの金属酸化物のなかで、酸化モリブデ
ン、酸化タングステン、酸化バナジウム、シリカ
ゲルが特に好ましい触媒として用いられる。ま
た、シリカゲルの場合、600〜1000℃の空気中で
熱処理されたシリカゲルが特に好ましい。熱処理
時間としては数十分〜数時間が好ましい。これら
の触媒は担体に担持させたものであつてもよい
が、担体なしで用いるのがより好ましい。
本発明で出発物質として用いられるN−モノ置
換ホルムアミドとは、一般式
R(−NHCHO)o
で示されるものであつて、こゝにnは1〜3の整
数を表わす。また、Rはn価の有機残基を意味
し、置換または未置換の脂肪族基、脂環族基、芳
香族基およびアラルキル基より選ばれた基を表わ
す。置換基としては、反応条件下で分解したり、
副反応を起したりするもの以外であればどんなも
のであつてもよい。例えば、塩素、フツ素、ニト
リル基、アルキル基、アルコキシ基、アシル基、
エステル基などの置換基を有するN−モノ置換ホ
ルムアミド類は本発明で使用することができる。
未置換のN−モノ置換ホルムアミドとしては、
例えば、N−メチルホルムアミド、N−エチルホ
ルムアミド、N−プロピルホルムアミド、N−ブ
チルホルムアミド、N−ベンチルホルムアミド、
N−ヘキシルホルムアミド、N−ヘプチルホルム
アミド、N−オクチルホルムアミド、N−ノニル
ホルムアミド、N−デシルホルムアミド、N−ウ
ンデシルホルムアミド、N−ドデシルホルムアミ
ド、N−オクタデシルホルムアミド、N−イソプ
ロピルホルムアミド、N−イソブチルホルムアミ
ド、N−t−ブチルホルムアミド、N−ネオペン
チルホルムアミド等のN−アルキルモノホルムア
ミド類;N−シクロペンチルホルムアミド、N−
シクロヘキシルホルムアミド、N−メチルシクロ
ヘキシルホルムアミド等のN−脂環式モノホルム
アミド類;N−フエニルホルムアミド、N−ナフ
チルホルムアミド、N−ピリジルホルムアミド、
N−インデニルホルムアミド、N−トリアジニル
ホルムアミド、N−トリルホルムアミド、N−キ
ノリルホルムアミド、N−オキサゾリルホルムア
ミド等のN−アリールモノホルムアミド類;N−
ベンジルホルムアミド、N−フエネチルホルムア
ミド等のN−アラルモノホルムアミド類;N,
N′−エチレンジホルムアミド、N,N′−トリメ
チレンジホルムアミド、N,N′−テトラメチレ
ンジホルムアミド、N,N′−ヘキサメチレンジ
ホルムアミド、N,N′−オクタメチレンジホル
ムアミド、N,N′−ウンデカメチレンジホルム
アミド、N,N′−ドデカメチレンジホルムアミ
ド等のN,N′−アルキレンジホルムアミド類;
N,N′−1,4−シクロヘキシルジホルムアミ
ド、N,N′−1,4−ジメチルシクロヘキシル
ホルムアミド、N,N′−イソホロンジホルムア
ミド、N,N′−シクロヘキシルメチレンジホル
ムアミド、N,N′−4,4′−ジシクロヘキシルメ
タンジホルムアミド等のN,N′−脂環式ジホル
ムアミド類;N,N′−1,4−フエニレンジホ
ルムアミド、N,N′−2,4−トリレンジホル
ムアミド、N,N′−2,6−トリレンジホルム
アミド、N,N′−4,4′−ジフエニルメタンジホ
ルムアミド、N,N′−4,4′−ジフエニルエーテ
ルジホルムアミド、N,N′−1,4−ナフチレ
ンジホルムアミド、N,N′−1,5−ナフチレ
ンジホルムアミド、N,N′−2,6−ナフチレ
ンジホルムアミド等のN,N′−アリールジホル
ムアミド類;N,N′−キシリレンジホルムアミ
ド等のN,N′−アラルキレンジホルムアミド類
などのモノホルムアミドおよびジホルムアミドが
挙げられる。この他にトリアミン、例えば、1,
8−ジアミノ−4−アミノメチルオクタン、1,
2,3−トリアミノプロパン、メラミン、トリス
(2−アミノエチル)アミンなどのトリホルムア
ミドも本発明で用いることができ、相当するトリ
イソシアナートへ変換することができる。
これらの未置換のホルムアミドを前記の置換基
で置換したホルムアミド類も、もちろん使用でき
る。例えばアミノ酸のエステル誘導体のホルムア
ミドなども使用できる。このようなものとして
は、アラニン、バリン、ロイシンのメチルエステ
ル、エチルエステルなどのホルムアミド;アスパ
ラギン酸、グルタミン酸のジメチルエステル、ジ
エチルエステルなどのホルムアミド;リジンのメ
チルエステル、エチルエステルなどのジホルムア
ミド;アラニン、バリン、ロイシンの2−アミノ
エチルエステルなどのジホルムアミド;アスパラ
ギン酸、グルタミン酸のジ(2−アミノエチル)
エステルなどのトリホルムアミド;リジンの2−
アミノエチルエステルなどのトリホルムアミドな
どがある。
これらのN−モノ置換ホルムアミド類は相当す
る一級アミンとギ酸誘導体、例えば、ギ酸メチ
ル、ギ酸エチルなどのギ酸エステルとの反応、ま
たは一級アミンと一酸化炭素との反応などによつ
て容易に得られるが、もちろん他の方法によつて
製造されたものであつてもよい。
本発明の方法で得られたニトリル類は、水素還
元によつて容易に一級アミンに変換されるもので
あるから、出発原料であるN−モノ置換ホルムア
ミドを相当する一級アミンから製造するならば、
本発明の方法を中間に用いることによつて、一級
アミンからより炭素数の多い一級アミンを容易に
製造できることになる。すなわち、モノアミンか
らは炭素数が1増えたモノアミンを、ジアミンか
らは炭素数が2増えたジアミンを、トリアミンか
らは炭素数が3増えたトリアミンを製造すること
ができる。
本発明で用いられる酸素含有ガスとは、酸素を
所定量含むものであつて、空気でもよいし、空気
または反応を阻害しない他のガス、例えば、窒
素、アルゴン、ヘリウム、炭酸ガスなどの不活性
ガスで純酸素を希釈したものであつてもよい。ま
た場合によつては水素、一酸化炭素、炭化水素、
ハロゲン化炭化水素などのガスを含んでいてもよ
い。
本発明の反応は酸素が存在しなくても幾分進行
するが、酸素を存在させることによつてニトリル
の収率および選択率が大巾に向上し、また触媒の
経時的な活性低下がなくなる効果がある。
触媒上に供給されるN−モノ置換ホルムアミド
と酸素との割合は、ホルムアミド基1個当り、酸
素が0.001〜50当量、好ましくは0.01〜10当量で
ある。酸素量が少なすぎるとニトリルの収率およ
び選択率が上がらず、また多すぎると酸化分解、
燃焼などが起つてニトリルの収率が低下するから
である。
反応系を窒素、アルゴン、ヘリウム、炭酸ガス
などの不活性ガスで希釈することも好ましい方法
で、この場合、これらの不活性ガスは原料のキヤ
リアーとしても用いられる。
反応系に供給されるN−モノ置換ホルムアミド
は、そのまゝでもよいし、不活性溶媒で希釈され
たものであつてもよい。このような溶媒の例とし
ては、ベンゼン、トルエン、キシレン、ビフエニ
ル、ペンタン、ヘキサン、シクロペンタン、シク
ロヘキサン、メチルシクロヘキサン、テトラリ
ン、デカリン、メチルナフタリン等の炭化水素
類、ベンゾニトリル、トリニトリル、アジポニト
リル、バレロニトリル、ブチロニトリル等のニト
リル類、酢酸エチル、酢酸オクチル、プロピオン
酸オクチル等のエステル類、クロルベンゼン、ジ
クロルベンゼン等のハロゲン化炭化水素類などが
挙げられる。
本発明の方法において使用される温度範囲は、
用いる触媒系、N−モノ置換ホルムアミドの種類
および酸素との割合、およびガス流中のホルムア
ミドの濃度、滞留時間、ガスの速度などの反応条
件によつて異なるが、300〜600℃が好ましい。
300℃より低い温度では実質的に殆んど反応が進
行しないし、600℃より高い温度では分解などの
副反応が起り、ニトリルの収率および選択率が低
下するからである。
本発明の方法によつてN−モノ置換ホルムアミ
ドからニトリルを製造する反応は、連続式でも回
分式でも行なえるが、連続式に行なうのが好まし
く、より好ましいのは気体状態のN−モノ置換ホ
ルムアミドと酸素を触媒層に連続的に接触させ
る、いわゆる気相流通反応方式である。また、粉
末状の触媒層の下部から気体状態のN−モノ置換
ホルムアミドと酸素を供給する流動床方式も好ま
しい。
触媒との接触時間は0.05〜100秒が好ましく、
さらには0.1〜20秒がより好ましい。
反応は通常、常圧下で行なわれるが、もちろん
減圧下または加圧下において行なつてもよい。特
に沸点の高いN−モノ置換ホルムアミドを用いる
場合には、300〜600℃の範囲で気化させるために
減圧下で実施することが好ましい。
次に実施例にて本発明をさらに詳細に説明する
が、本発明は、これらの実施例によつて何ら限定
されるものではない。
これらの実施例は一般的に次のような方法で行
なわれた。
長さ40cm、直径2cmの石英製の反応管を長さ30
cmの縦型の電気炉中に、触媒層がほゞ中央に位置
するように固定した反応装置を用い、上部より原
料および酸素含有ガスを供給する流通式で反応を
行なつた。触媒層の上部には予熱層として石英砂
を充填した。反応温度は触媒層に熱電対入りの石
英管を挿入することによつて測定した。原料のN
−モノ置換ホルムアミドを予熱装置によつて予熱
し、ガス状または高温液状にして反応管に導入し
た。生成物の同定、定量は反応管出口のガス状物
質をガスクロマトグラフイーによつて行なう方法
と、反応生成物を1−ブロモナフタリンに吸収さ
せた液状物質をガスクロマトグラフイーで行なう
方法とを用いた。
実施例 1
粉末状のMoO3を錠剤状に成型した触媒2gを
用い、N−n−ブチルホルムアミド:酸素:窒素
=1:2:20のモル比から成る原料ガスをこの触
媒上にSV=3000hr-1なる空間速度で導入した。
反応温度430℃で反応させた結果、N−n−ブチ
ルホルムアミドの変換率は87%で、n−バレロニ
トリルの収率は73%で選択率は84%であつた。副
生成物としてn−ブチルイソシアナートが4%、
n−ブチロニトリルが8%の収率で得られた。
反応温度を変えた場合のn−バレロニトリルの
収率および選択率は第1表のとおりであつた。
The present invention relates to a method for producing a nitrile from an N-monosubstituted formamide, and more particularly to a method for producing a nitrile in one step by dehydration and rearrangement of an N-monosubstituted formamide. Although it is known that the corresponding isonitrile can be obtained by dehydrating N-monosubstituted formamide, a method for directly producing a nitrile has not been well known. Recently, a method for producing nitriles from formamide using bismuth phosphomolybdate as a catalyst has been reported (ACS/CSJ
Preprint PETR 82, 1979), but the inventors also
-While researching the reaction of monosubstituted formamides, we discovered a method for obtaining nitriles in high yield and high selectivity, and arrived at the present invention. That is, the present invention provides 300% of N-monosubstituted formamide in the presence of an oxygen-containing gas and a catalyst consisting of one or more selected from oxides of metals of Groups and Groups of the Periodic Table and silica gel. A method for producing nitrile from formamide, characterized by processing at a temperature in the range of ~600°C. The method of the present invention can be simply expressed by the general formula for monoformamide as follows. RNHCHO( O2 ) --→ -H2O [RN=C]→R-C≡N i.e. N-monosubstituted formamide dehydrates in the presence of catalyst and oxygen, possibly via isonitrile as an intermediate. , and then R rearranges to give a nitrile.
This reaction is thought to proceed via the isonitrile represented in [ ], but is characterized by the fact that a nitrile having the same number of carbon atoms can be obtained from formamide in one step. Therefore, the number of carbon chains increases by one compared to the original formamide. It is thought that a similar reaction occurs with diformamide and triformamide as with monoformamide. Group metal oxides and silica gels used as catalysts in the present invention include:
V 2 O 3 , VO 2 , V 2 O 5 , NbO, NbO 2 , Nb 2 O 5 ,
Ta 2 O 5 , Sb 2 O 3 , Bi 2 O 3 , CrO, Cr 2 O 3 , MoO 2 ,
Examples include MoO 3 , WO 2 , WO 3 , W 2 O 5 , SiO 2 and the like, but of course oxides in other oxidation states may also be included. These metal oxides can be used alone or in combination of two or more. Moreover, it is also possible to use as a catalyst a mixture of these metal oxides with other metals or metal oxides which may or may not be active as catalysts, if necessary. Among these metal oxides, molybdenum oxide, tungsten oxide, vanadium oxide, and silica gel are particularly preferably used as catalysts. Moreover, in the case of silica gel, silica gel heat-treated in air at 600 to 1000°C is particularly preferable. The heat treatment time is preferably several tens of minutes to several hours. Although these catalysts may be supported on a carrier, it is more preferable to use them without a carrier. The N-monosubstituted formamide used as a starting material in the present invention is represented by the general formula R(-NHCHO) o , where n represents an integer from 1 to 3. Further, R means an n-valent organic residue, and represents a group selected from substituted or unsubstituted aliphatic groups, alicyclic groups, aromatic groups, and aralkyl groups. Substituents include those that decompose under reaction conditions,
It may be anything as long as it does not cause side reactions. For example, chlorine, fluorine, nitrile group, alkyl group, alkoxy group, acyl group,
N-monosubstituted formamides having substituents such as ester groups can be used in the present invention. As unsubstituted N-monosubstituted formamide,
For example, N-methylformamide, N-ethylformamide, N-propylformamide, N-butylformamide, N-bentylformamide,
N-hexylformamide, N-heptylformamide, N-octylformamide, N-nonylformamide, N-decylformamide, N-undecylformamide, N-dodecylformamide, N-octadecylformamide, N-isopropylformamide, N-isobutylformamide , N-alkyl monoformamides such as N-t-butylformamide and N-neopentylformamide; N-cyclopentylformamide, N-
N-alicyclic monoformamides such as cyclohexylformamide and N-methylcyclohexylformamide; N-phenylformamide, N-naphthylformamide, N-pyridylformamide,
N-aryl monoformamides such as N-indenylformamide, N-triazinylformamide, N-tolylformamide, N-quinolylformamide, N-oxazolylformamide; N-
N-aral monoformamides such as benzylformamide and N-phenethylformamide; N,
N'-ethylene diformamide, N,N'-trimethylene diformamide, N,N'-tetramethylene diformamide, N,N'-hexamethylene diformamide, N,N'-octamethylene diformamide, N,N N,N'-alkylene diformamides such as '-undecamethylene diformamide and N,N'-dodecamethylene diformamide;
N,N'-1,4-cyclohexyldiformamide, N,N'-1,4-dimethylcyclohexylformamide, N,N'-isophorone diformamide, N,N'-cyclohexylmethylene diformamide, N,N'- N,N'-alicyclic diformamides such as 4,4'-dicyclohexylmethane diformamide; N,N'-1,4-phenylene diformamide, N,N'-2,4-tolylene diformamide, N,N'-2,6-tolylene diformamide, N,N'-4,4'-diphenylmethane diformamide, N,N'-4,4'-diphenyl ether diformamide, N,N'- N,N'-aryl diformamides such as 1,4-naphthylene diformamide, N,N'-1,5-naphthylene diformamide, N,N'-2,6-naphthylene diformamide; N,N'- Examples include monoformamides and diformamides such as N,N'-aralkylene diformamides such as xylylene diformamide. In addition, triamines such as 1,
8-diamino-4-aminomethyloctane, 1,
Triformamides such as 2,3-triaminopropane, melamine, tris(2-aminoethyl)amine can also be used in the present invention and can be converted to the corresponding triisocyanates. Of course, formamides obtained by substituting these unsubstituted formamides with the above-mentioned substituents can also be used. For example, formamide, which is an ester derivative of an amino acid, can also be used. These include formamides such as methyl and ethyl esters of alanine, valine, and leucine; formamides such as dimethyl and diethyl esters of aspartic acid and glutamic acid; diformamides such as methyl and ethyl esters of lysine; Diformamides such as 2-aminoethyl ester of valine and leucine; di(2-aminoethyl) of aspartic acid and glutamic acid
Triformamide such as ester; 2- of lysine
Examples include triformamide such as aminoethyl ester. These N-monosubstituted formamides can be easily obtained by reacting the corresponding primary amine with a formic acid derivative such as a formic acid ester such as methyl formate or ethyl formate, or by reacting a primary amine with carbon monoxide. However, it may of course be manufactured by other methods. Since the nitriles obtained by the method of the present invention are easily converted into primary amines by hydrogen reduction, if the starting material N-monosubstituted formamide is produced from the corresponding primary amine,
By using the method of the present invention as an intermediate, a primary amine having a larger number of carbon atoms can be easily produced from a primary amine. That is, it is possible to produce a monoamine with an increased number of carbon atoms by 1 from a monoamine, a diamine with an increased number of carbon atoms of 2 from a diamine, and a triamine with an increased number of carbon atoms of 3 from a triamine. The oxygen-containing gas used in the present invention includes a predetermined amount of oxygen, and may be air or other gas that does not inhibit the reaction, such as inert gas such as nitrogen, argon, helium, carbon dioxide, etc. It may also be pure oxygen diluted with gas. In some cases, hydrogen, carbon monoxide, hydrocarbons,
It may also contain gases such as halogenated hydrocarbons. Although the reaction of the present invention proceeds to some extent even in the absence of oxygen, the presence of oxygen greatly improves the yield and selectivity of the nitrile, and also eliminates the deterioration of the activity of the catalyst over time. effective. The ratio of N-monosubstituted formamide and oxygen supplied onto the catalyst is 0.001 to 50 equivalents, preferably 0.01 to 10 equivalents of oxygen per formamide group. If the amount of oxygen is too small, the yield and selectivity of nitrile will not increase, and if it is too large, oxidative decomposition,
This is because combustion occurs and the yield of nitrile decreases. It is also a preferred method to dilute the reaction system with an inert gas such as nitrogen, argon, helium, carbon dioxide, etc. In this case, these inert gases are also used as carriers for the raw materials. The N-monosubstituted formamide supplied to the reaction system may be as is or may be diluted with an inert solvent. Examples of such solvents include hydrocarbons such as benzene, toluene, xylene, biphenyl, pentane, hexane, cyclopentane, cyclohexane, methylcyclohexane, tetralin, decalin, methylnaphthalene, benzonitrile, trinitrile, adiponitrile, valeronitrile. , nitriles such as butyronitrile, esters such as ethyl acetate, octyl acetate, and octyl propionate, and halogenated hydrocarbons such as chlorobenzene and dichlorobenzene. The temperature range used in the method of the invention is:
A temperature of 300 to 600° C. is preferred, depending on the catalyst system used, the type of N-monosubstituted formamide and its proportion with oxygen, and reaction conditions such as the concentration of formamide in the gas stream, residence time, and gas velocity.
This is because at a temperature lower than 300°C, the reaction hardly proceeds, and at a temperature higher than 600°C, side reactions such as decomposition occur, resulting in a decrease in the yield and selectivity of nitrile. The reaction for producing a nitrile from N-monosubstituted formamide according to the method of the present invention can be carried out either continuously or batchwise, but it is preferable to carry out the reaction continuously, and more preferably to produce a nitrile from N-monosubstituted formamide in a gaseous state. This is a so-called gas phase flow reaction method in which oxygen and oxygen are brought into continuous contact with the catalyst layer. Also preferred is a fluidized bed system in which gaseous N-monosubstituted formamide and oxygen are supplied from below the powdered catalyst layer. The contact time with the catalyst is preferably 0.05 to 100 seconds,
Furthermore, 0.1 to 20 seconds is more preferable. The reaction is usually carried out under normal pressure, but may of course be carried out under reduced pressure or increased pressure. In particular, when N-monosubstituted formamide having a high boiling point is used, it is preferable to carry out the reaction under reduced pressure in order to vaporize it at a temperature in the range of 300 to 600°C. EXAMPLES Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to these Examples in any way. These examples were generally performed in the following manner. A quartz reaction tube with a length of 40 cm and a diameter of 2 cm was
The reaction was carried out in a flow-through type reactor in which the catalyst layer was fixed in a vertical electric furnace with a catalyst layer located approximately at the center, and raw materials and oxygen-containing gas were supplied from the top. The upper part of the catalyst layer was filled with quartz sand as a preheating layer. The reaction temperature was measured by inserting a quartz tube containing a thermocouple into the catalyst layer. Raw material N
- Monosubstituted formamide was preheated by a preheater and introduced into the reaction tube in the form of a gas or a hot liquid. Identification and quantification of the products were carried out using gas chromatography on the gaseous substance at the outlet of the reaction tube, and gas chromatography on the liquid substance obtained by absorbing the reaction product in 1-bromonaphthalene. . Example 1 Using 2 g of a catalyst made of powdered MoO 3 molded into a tablet, a raw material gas consisting of a molar ratio of N-n-butylformamide:oxygen:nitrogen = 1:2:20 was applied to the catalyst for SV = 3000 hours. It was introduced at a space velocity of -1 .
As a result of the reaction at a reaction temperature of 430°C, the conversion rate of N-n-butylformamide was 87%, the yield of n-valeronitrile was 73%, and the selectivity was 84%. 4% n-butyl isocyanate as a by-product;
n-Butyronitrile was obtained with a yield of 8%. Table 1 shows the yield and selectivity of n-valeronitrile when the reaction temperature was changed.
【表】
実施例 2
粉末状のWO3を錠剤状に成型した触媒3gを
用い、実施例1と同様の条件下で反応を行なつ
た。反応温度が370℃の場合、n−バレロニトリ
ルの収率は10%で選択率は90%であつた。470℃
においては、n−バレロニトリルの収率は48%
で、選択率は91%であつた。
実施例 3
800℃の空気中で1時間熱処理されたシリカゲ
ル球3gを触媒として用い、ホルムアニリド:酸
素:窒素=1:1:40なるモル比の原料ガスの反
応をSV=4000hr-1で行なつた。400℃でのベンゾ
ニトリルの収率は52%で選択率は80%であつた。
実施例 4
粉末状のV2O5(1g)を石英砂(3g)に混合
したものを触媒とし、N−シクロヘキシルホルム
アミドの反応を行なつた。原料ガスの組成はモル
比でN−シクロヘキシルホルムアミド;:酸素:
窒素=2:1:20で、触媒層での滞留時間は約1
秒であつた。400℃でのN−シクロヘキシルホル
ムアミドの変換率は58%で、シクロヘキサノニト
リルの収率は33%で選択率は57%であつた。
実施例 5
実施例2と同様の触媒を用いてN,N′−ヘキ
サメチレンジホルムアミドの反応を行なつた。
150℃に加熱したN,N′−ヘキサメチレンジホル
ムアミドを2g/hrの割合で反応装置へ導入し
た。反応系は約100mmHgの減圧状態に保たれてお
り、酸素の導入量は0.6/hrで、反応温度は420
℃であつた。スベロニトリルの収率は35%で、選
択率は51%であつた。
実施例 6
MoO3とWO3の等モルから成る混合粉末を錠剤
に成形した触媒を用いて、N−ベンジルホルムア
ミドの反応を実施例1と同様な条件下で行なつ
た。450℃でのフエニルアセトニトリルの収率は
62%で、選択率は70%であつた。
実施例 7
900℃で1時間熱処理されたシリカゲル(2g)
に粉末状のMoO3(1g)を混合したものを触媒
とし、N−ヘキシルホルムアミドの反応を実施例
3と同様の条件下で行なつた。420℃でのヘプタ
ノニトリルの収率は68%で、選択率は82%であつ
た。
実施例 8〜12
実施例1と同様な条件下で種々の触媒について
N−n−ブチルホルムアミドの反応を行なつた結
果を第2表に示した。混合触媒の組成比はモル比
を示す。[Table] Example 2 A reaction was carried out under the same conditions as in Example 1 using 3 g of a catalyst prepared by molding powdered WO 3 into tablets. When the reaction temperature was 370°C, the yield of n-valeronitrile was 10% and the selectivity was 90%. 470℃
In this case, the yield of n-valeronitrile was 48%.
The selection rate was 91%. Example 3 Using 3 g of silica gel balls heat-treated in air at 800°C for 1 hour as a catalyst, a reaction of raw material gases with a molar ratio of formanilide:oxygen:nitrogen = 1:1:40 was carried out at SV = 4000 hr -1. Summer. The yield of benzonitrile at 400°C was 52% and the selectivity was 80%. Example 4 A reaction of N-cyclohexylformamide was carried out using a mixture of powdered V 2 O 5 (1 g) and quartz sand (3 g) as a catalyst. The composition of the raw material gas is N-cyclohexylformamide;:oxygen:
Nitrogen = 2:1:20, residence time in catalyst layer is approximately 1
It was hot in seconds. The conversion of N-cyclohexylformamide at 400°C was 58%, the yield of cyclohexanonitrile was 33%, and the selectivity was 57%. Example 5 Using the same catalyst as in Example 2, a reaction of N,N'-hexamethylene diformamide was carried out.
N,N'-hexamethylene diformamide heated to 150 DEG C. was introduced into the reactor at a rate of 2 g/hr. The reaction system is maintained at a reduced pressure of approximately 100 mmHg, the amount of oxygen introduced is 0.6/hr, and the reaction temperature is 420 °C.
It was warm at ℃. The yield of suberonitrile was 35% and the selectivity was 51%. Example 6 A reaction of N-benzylformamide was carried out under the same conditions as in Example 1 using a catalyst prepared by tabletting a mixed powder consisting of equimolar moles of MoO 3 and WO 3 . The yield of phenylacetonitrile at 450℃ is
62%, and the selection rate was 70%. Example 7 Silica gel (2 g) heat treated at 900°C for 1 hour
The reaction of N-hexylformamide was carried out under the same conditions as in Example 3 using a mixture of powdered MoO 3 (1 g) as a catalyst. The yield of heptanonitrile at 420°C was 68% and the selectivity was 82%. Examples 8 to 12 Table 2 shows the results of reactions of N-n-butylformamide using various catalysts under the same conditions as in Example 1. The composition ratio of the mixed catalyst indicates a molar ratio.
【表】【table】
Claims (1)
およびシリカゲルから選ばれた1種または2種以
上から成る触媒および酸素含有ガスの存在下にお
いて、N−モノ置換ホルムアミドを300〜600℃の
範囲の温度で処理することを特徴とするホルムア
ミドからニトリルを製造する方法。 2 触媒が酸化モリブデンである特許請求の範囲
第1項記載の方法。 3 触媒が酸化タングステンである特許請求の範
囲第1項記載の方法。 4 触媒が酸化バナジウムである特許請求の範囲
第1項記載の方法。 5 触媒が600〜1000℃の空気中で熱処理された
シリカゲルである特許請求の範囲第1項記載の方
法。[Claims] 1. N-monosubstituted formamide in the presence of a catalyst consisting of one or more selected from oxides of group metals and silica gel of the periodic table and an oxygen-containing gas. A method for producing nitriles from formamide, characterized in that the treatment is carried out at a temperature in the range 300-600°C. 2. The method according to claim 1, wherein the catalyst is molybdenum oxide. 3. The method according to claim 1, wherein the catalyst is tungsten oxide. 4. The method according to claim 1, wherein the catalyst is vanadium oxide. 5. The method according to claim 1, wherein the catalyst is silica gel heat-treated in air at 600 to 1000°C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1773880A JPS56115759A (en) | 1980-02-18 | 1980-02-18 | Preparation of nitrile |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1773880A JPS56115759A (en) | 1980-02-18 | 1980-02-18 | Preparation of nitrile |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56115759A JPS56115759A (en) | 1981-09-11 |
JPS6341384B2 true JPS6341384B2 (en) | 1988-08-17 |
Family
ID=11952080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1773880A Granted JPS56115759A (en) | 1980-02-18 | 1980-02-18 | Preparation of nitrile |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56115759A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115337959B (en) * | 2022-10-18 | 2023-03-14 | 中国天辰工程有限公司 | Catalyst for ammonifying caprolactam and preparation method and application thereof |
-
1980
- 1980-02-18 JP JP1773880A patent/JPS56115759A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56115759A (en) | 1981-09-11 |
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