JPS6340330A - Bonding method - Google Patents
Bonding methodInfo
- Publication number
- JPS6340330A JPS6340330A JP61183385A JP18338586A JPS6340330A JP S6340330 A JPS6340330 A JP S6340330A JP 61183385 A JP61183385 A JP 61183385A JP 18338586 A JP18338586 A JP 18338586A JP S6340330 A JPS6340330 A JP S6340330A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- bonding
- heated
- electric torch
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000032258 transport Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 16
- 239000011261 inert gas Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明はＣｕ細線を利用するポールボンディング方法に
関し、特に電気トーチを利用するボールディングに好適
する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a pole bonding method using a Cu thin wire, and is particularly suitable for bonding using an electric torch.
（従来の技術）
半導体素子の製造に当ってはその組立工程としてボンデ
ィング方法が賞用されており、その中にはいわゆるポー
ルボンディングも実用化されて量産の一翼を荷っている
。(Prior Art) In manufacturing semiconductor devices, bonding methods are widely used as an assembly process, and among these methods, so-called pole bonding has been put into practical use and plays a role in mass production.
このポールボンディングではキャピラリから繰出した金
属細線を加熱溶融してほぼ完全な球形とし、半導体素子
に形成した導電性金属層に対してキャピラリ先端を利用
してこのポールを熱圧着する手法が採用されている。In this pole bonding, a thin metal wire drawn out from a capillary is heated and melted into an almost perfect spherical shape, and the tip of the capillary is used to thermocompress the pole to a conductive metal layer formed on a semiconductor element. There is.
この金属細線には展延性に富んだＡｕ細線が利用されて
きたが、経済的な観点からＡ１細線の適用が開発されて
一部の機種に実用化されており、更に最近はＣｕ細線を
利用する手法も開発され、経済上の利点に加えて、Ａ１
への拡散速度が遅い点等を利用すべく実用化の域に達し
つつある。Au thin wire with high malleability has been used for this thin metal wire, but from an economic point of view, A1 thin wire has been developed and put into practical use in some models, and more recently Cu thin wire has been used. A method has also been developed to
It is now reaching the stage of practical application, taking advantage of its slow diffusion rate.
一方、ポールディングでは超音波を適用する方法が一般
化されると共に、電気放電により真円度が大きいボール
形成が期待できる電気トーチ方式も賞月化されている。On the other hand, in paulding, the method of applying ultrasonic waves has become common, and the electric torch method, which can be expected to form balls with high roundness by electric discharge, has also become popular.
更に加えて、リードフレームはＦｅもしくはＦｅ−Ｎｉ
系材料が主流でおったが、その一部もしくは全面に銀被
膜を形成することによる経費増大を防ぐために、ＣＵ系
のフレームが適用されており、このＣＵ系フレームは、
その表面に酸化層が形成されるのを防止するためにその
搬送期間中還元雰囲気を維持する配慮が施されている。In addition, the lead frame is made of Fe or Fe-Ni.
CU-based materials were the mainstream, but in order to prevent the increase in costs caused by forming a silver coating on part or the entire surface, CU-based frames were used.
In order to prevent the formation of an oxide layer on the surface, care is taken to maintain a reducing atmosphere during the transportation period.
従って、マウンタもしくはホンダのリードフレーム搬送
路は、大気を遮蔽する隔壁を連続的に設けて、この中に
還元雰囲気を形成している。Therefore, the mounter or Honda's lead frame conveyance path is continuously provided with a partition wall that shields the atmosphere to form a reducing atmosphere therein.
ところで電気トーチ、ＣＬＩ細線及び超音波方式の組合
せは最近多く採用され始めており、第４図に示すように
Ｃｕ細線２０の酸化防止手段は電気トーチ２１に付設す
る管２２もしくは別に設置する管体から還元性ガス２３
又は不活性ガスを吹きつける方法に頼っているのが現状
である。By the way, the combination of an electric torch, a CLI thin wire, and an ultrasonic method has recently begun to be widely adopted, and as shown in FIG. Reducing gas 23
Or, the current situation is to rely on a method of blowing inert gas.
（発明が解決しようとする問題点）
硬度が大きいＣｕ細線によるボンディングではＡｕ細線
圧着時と同一荷重を用いると十分につ、Ｓ−れず得られ
るボンディング強度が低くなるので、このＣｕ細線を強
引につぶそうとして荷重を大きくすると半導体基板にク
ラックが発生する。(Problem to be Solved by the Invention) When bonding with a thin Cu wire having a high hardness, if the same load as when crimping the Au thin wire is used, the bonding strength obtained will be low due to insufficient S-bonding, so the bonding strength obtained will be lower. If the load is increased in an attempt to crush the semiconductor substrate, cracks will occur in the semiconductor substrate.
更にこのボンディング工程を自動的に実施するホンダで
はリードフレームを下側から加熱するいわゆるアフタヒ
ータが付設されているので、この加熱温度を上昇してＣ
ｕ細線によるボンディング強度を向上することも考えら
れるが、このボンディング工程前には半導体基板に回路
もしくは各種のデバイスが造り込まれ、更に各種の後処
理も終えているために温度上昇に限度がある。Furthermore, Honda, which automatically performs this bonding process, is equipped with a so-called after-heater that heats the lead frame from below, increasing the heating temperature and increasing the temperature.
It is possible to improve the bonding strength using U-thin wires, but there is a limit to the temperature rise because circuits or various devices are built into the semiconductor substrate before this bonding process, and various post-processing processes have also been completed. .
本発明は上を己難点を除去する新規なボンディング方法
を提供するもので、特に硬度の大きいＣｕ細線のボンデ
ィング強度を向上することを目的とする。The present invention provides a new bonding method that eliminates the above-mentioned disadvantages, and particularly aims to improve the bonding strength of thin Cu wires having high hardness.
（発明の構成〕
（問題点を解決するための手段）
このため本発明ではキャピラリから繰出すＣｕ細線端を
加熱してボールを形成するのに加えて、このキャピラリ
をも同時に加熱する方式を採用して硬度が大きいＣｕ細
線のボンディング強度を増大する。その具体的手段とし
ては、電気トーチ電極付近に開口をもつ管体に加熱源を
形成し、この開口から導出する加熱気体を利用する。(Structure of the Invention) (Means for Solving the Problems) Therefore, in the present invention, in addition to heating the end of the thin Cu wire drawn out from the capillary to form a ball, a method is adopted in which the capillary is also heated at the same time. In order to increase the bonding strength of a thin Cu wire having high hardness, a specific means is to form a heating source in a tube having an opening near the electric torch electrode, and utilize heated gas drawn out from this opening.
（作 用）
本発明は、キャピラリならびにここから繰出すＣｕ細線
を加熱して得られるボンディング強度がキャピラリを加
熱しない場合より大きい事実を基に完成したものでおる
。しかも加熱源をキャピラリに形成する例としては、そ
の先端付近を０）特別な構造を付設する、（２）抵抗成
分層をキャピラリに塗着してこれの発熱を利用する、お
るいはＱ９キャピラリ外周に加熱源を設置することが挙
げられる。(Function) The present invention was completed based on the fact that the bonding strength obtained by heating a capillary and a thin Cu wire drawn out from the capillary is greater than that obtained when the capillary is not heated. Moreover, examples of forming the heating source in a capillary include (0) attaching a special structure to the vicinity of its tip, (2) applying a resistive component layer to the capillary and utilizing its heat generation, or (2) using a Q9 capillary. One example is installing a heating source around the outer periphery.
しかし０）は速いインデックスが要求される現在のボン
ディング工程では構造が複雑となるキャピラリを使用し
なければならず得策ではなく、（ロ）は塗着層が蒸散も
しくは剥離する難点があり、Ｑ９は１Ｓｔ及び２ｎｄボ
ンデイングのため必要なキャピラリの可動範囲を制限す
る。と言うのはリードフレームの搬送路に対抗して遮蔽
板を設けて、キャピラリ近傍及び搬送路近傍の雰囲気調
整を実施するボンダーではキャピラリの移動用に設置す
る遮蔽板開口との接触を避けなければならず、この開口
寸法を増すのは雰囲気の調整にとって極めて不都合にな
る。従って、本発明では電気トーチ側に加熱源を設け、
しかもキャピラリと繰出したＣｕ細線とを同時に加熱後
常法のボンディングを行う。However, 0) is not a good idea because it requires the use of a capillary with a complicated structure in the current bonding process that requires a fast index, and (B) has the disadvantage that the coating layer evaporates or peels off. Limit the range of movement of the capillary required for 1st and 2nd bonding. This is because in a bonder that adjusts the atmosphere near the capillary and the transport path by installing a shield plate against the lead frame transport path, contact with the opening of the shield plate installed for moving the capillary must be avoided. However, increasing the opening size is extremely inconvenient for controlling the atmosphere. Therefore, in the present invention, a heating source is provided on the electric torch side,
Furthermore, the capillary and the drawn-out Cu thin wire are simultaneously heated and then bonded in a conventional manner.
（実施例）
本発明の一実施例を第１図乃至第３図を参照して説明す
ると、第１図に示すように搬送路１を搬送するリードフ
レーム２には半導体素子３・・・を固着し、この搬送路
には前述のように遮蔽板５を設け、ここにはキャピラリ
６が移動可能にする幅１０ｍ程度の開ロアを形成する。(Embodiment) An embodiment of the present invention will be described with reference to FIGS. 1 to 3. As shown in FIG. The shielding plate 5 is provided on this conveyance path as described above, and an open lower portion having a width of about 10 m is formed here so that the capillary 6 can move.
この開ロアの近傍には、キャピラリ６ならびに電気トー
チ基を配置し、Ｃｕ細線８を把持するキャピラリ６には
超音波ホーン１６を付設する。電気トーチ基は金属製管
体１１の先端開口面に放電電極１２を設け、この管体よ
り不活性ガスもしくは還元性気体例えばＨ２を導出する
。この管体１１開口面にはオリフィスノズル１３を設け
て広角度に気体を噴出するよう配慮しており、このオリ
フィスノズル１３は図に示すように気体通路を一旦内径
１＃位に絞ってから急激に拡大する構造である。又、電
気トーチ１０の一部である金属製管体１１内にはカート
リッジヒータからなる加熱源１４を設けるが、この位置
は放電電極１２底部から５〜６ｃｍとする。A capillary 6 and an electric torch base are arranged near this open lower, and an ultrasonic horn 16 is attached to the capillary 6 that grips the Cu thin wire 8. The electric torch base is provided with a discharge electrode 12 on the open end surface of a metal tube 11, and an inert gas or a reducing gas such as H2 is led out from the tube. An orifice nozzle 13 is provided on the opening surface of this tube body 11 in order to eject gas at a wide angle.As shown in the figure, this orifice nozzle 13 once narrows the gas passage to an inner diameter of about 1# and then suddenly It is a structure that expands to Further, a heating source 14 consisting of a cartridge heater is provided inside the metal tube body 11 which is a part of the electric torch 10, and this position is 5 to 6 cm from the bottom of the discharge electrode 12.
この管体１１には還元性ガス（Ｆｏｒｍｉｎｇ Ｇａ５
）が流量２〜３ｎ／ｍｉｎ圧力１気圧以上が流れ、オリ
フィスノズル１３から加熱した還元性ガスが放射状に噴
出してキャピラリ６から繰出した径２５ＪＪＩｎのＣｕ
細線８とキャピラリ６とを同時に還元性ガス雰囲気に保
持することが可能となりＣｕ細線８とキャピラリ６が同
時に加熱される。This tube body 11 contains a reducing gas (Forming Ga5
) flows at a flow rate of 2 to 3 n/min and a pressure of 1 atm or more, and the heated reducing gas is ejected radially from the orifice nozzle 13 and delivered from the capillary 6.
It becomes possible to hold the thin wire 8 and the capillary 6 in a reducing gas atmosphere at the same time, and the thin Cu wire 8 and the capillary 6 are heated at the same time.
次に放電電極１２とＣｕ細線８の放電によりＣＵボール
を形成後、この雰囲気下でキャピラリ６を遮蔽板５の開
ロアを通して半導体基板３方向に移動して、加熱により
軟化したＣｕ細線を利用して１ｓｔボンデイング及び２
ｎｄボンデイングを常法通り実施する。又加熱気体温度
は半導体素子に悪影響を及ぼす３５０’Ｃ未満が望まし
い。Next, after forming a CU ball by discharging the discharge electrode 12 and the Cu thin wire 8, the capillary 6 is moved in the direction of the semiconductor substrate 3 through the open lower part of the shielding plate 5 in this atmosphere, and the Cu thin wire softened by heating is used. 1st bonding and 2
nd bonding is performed in the usual manner. Further, the temperature of the heated gas is desirably less than 350'C, which adversely affects semiconductor elements.
このように本発明に係るボンディング方法では加熱した
還元性もしくは不活性気体によりＣｕボール形成用Ｃｕ
細線ならびにこれを把持するキャピラリを加熱しながら
Ｃ１，Ｊポー°ルを形成し、次に通常のボンディング工
程を施して十分なボンディング強度を得たので、その結
果を第２図及び第３図に示す。As described above, in the bonding method according to the present invention, Cu for forming Cu balls is bonded using heated reducing or inert gas.
C1 and J poles were formed while heating the thin wire and the capillary that grips it, and then a normal bonding process was performed to obtain sufficient bonding strength. The results are shown in Figures 2 and 3. show.
同図とも横軸にＩＪ ３ （Ｕｌｔｒａ ５ｏｎｉｃ）
強度を、第２図の縦軸には半導体基板に設けるＡｊ２か
らなるパッドにボンケイングを行い、この半導体基板に
クラックが発生した％、又第３図の縦軸にはテンション
ゲージによるボール剥離強度３を採りそれぞれの関係を
示した。ボール剥離強度とはボンディング修了後テンシ
ョンゲージに付属する棒体によって、このボンディング
部を真横に叩いて剥離に要したびを測定した値を示した
ものである。これはボンディング荷重を何れも１４０ｇ
として形成し、加熱した雰囲気温度２２０℃、１５０℃
ならびに常温をパラメータとした測定値であり、何れも
加熱した雰囲気を適用した方が良結果を示している。In both figures, IJ 3 (Ultra 5onic) is shown on the horizontal axis.
The vertical axis in Fig. 2 shows the percentage of cracks generated in the semiconductor substrate by performing bonding on the pad made of Aj2 provided on the semiconductor substrate, and the vertical axis in Fig. 3 shows the ball peeling strength 3 measured by a tension gauge. The relationship between each is shown. The ball peel strength is the value obtained by hitting the bonded part sideways with a rod attached to a tension gauge after bonding is completed and measuring the number of times it takes for the ball to peel off. This means that the bonding load is 140g in both cases.
The temperature of the atmosphere was 220°C and 150°C.
These are also measured values using room temperature as a parameter, and both show better results when a heated atmosphere is applied.
即ち、キャピラリならびにここから繰出したＣｕ細線を
加熱した雰囲気中に維持しながらボンディング工程を施
すに際して軟化したＣｕ細線の適用により本来保有する
高硬度による難点を緩和できると推定される。That is, it is presumed that by applying a softened Cu thin wire when performing the bonding process while maintaining the capillary and the Cu thin wire drawn out from the capillary in a heated atmosphere, it is possible to alleviate the difficulties caused by the inherent high hardness.
尚、電気トーチを構成する管体から加熱気体を噴出する
に当って、実施例に例示したオリフィスノズルだけが有
効ではなく、キャピラリ及び繰出したＣｕ細線を同時に
加熱可能な範囲を確保できるノズルであれば差支えない
。又加熱気体としては還元性ガスの外に不活性ガスも適
用可能であり、又電気トーチ管体内に加熱気体を導入す
る例の外には加熱気体専用の管体を設置する例も考えら
れるが、経費対策上採用できない。Note that the orifice nozzle illustrated in the example is not the only effective method for ejecting heated gas from the tube constituting the electric torch. It doesn't matter. In addition to reducing gases, inert gases can also be used as the heating gas, and in addition to the example of introducing heating gas into the electric torch tube, it is also possible to install a tube exclusively for the heating gas. , cannot be adopted due to cost considerations.
第１図は本発明方法を説明する使用設備の概要を示す断
面図、第２図は縦軸にクラック発生％を、横軸に超音波
出力を採り両者の関係を気体の加熱温度をパラメータに
して示す関係図、第３図は横軸に超音波出力、縦軸にボ
ール剥離強度を採り、気体の加熱温度をパラメータとし
て両者の関係を示す図、第４図は従来のボンディング方
法に使用する装置の概略を示す断面図である。Figure 1 is a cross-sectional view showing an overview of the equipment used to explain the method of the present invention, and Figure 2 shows the percentage of crack generation on the vertical axis and the ultrasonic output on the horizontal axis, and the relationship between the two is plotted using the gas heating temperature as a parameter. Figure 3 shows the relationship between the two using the gas heating temperature as a parameter, with the horizontal axis representing the ultrasonic output and the vertical axis representing the ball peel strength. Figure 4 shows the relationship between the two using the conventional bonding method. FIG. 2 is a cross-sectional view schematically showing the device.
Claims (1)
する搬送系より離して遮蔽板を設け、この半導体素子に
対応するこの遮蔽板に形成する開口部近傍にキャピラリ
ならびに電気トーチを配置し、この電気トーチ先端に位
置する放電電極付近に開口する管体内に加熱源を形成し
、前記キャピラリ先端より繰出すＣｕ細線ならびにキャ
ピラリ先端付近を前記電気トーチ開口から導出する加熱
気体の雰囲気内に維持しながら、前記電気トーチ電極の
放電により形成するＣｕボールを前記遮蔽板開口内から
移動して前記半導体素子にボンディングすることを特徴
とするボンディング方法。A shielding plate is provided at a distance from the transport system that transports the lead frame to which the semiconductor element is fixed to a predetermined position, and a capillary and an electric torch are arranged near the opening formed in the shielding plate corresponding to the semiconductor element. A heating source is formed in a tube opening near the discharge electrode located at the tip, and the Cu thin wire drawn out from the tip of the capillary and the vicinity of the tip of the capillary are maintained in the atmosphere of the heated gas led out from the opening of the electric torch. A bonding method characterized in that a Cu ball formed by discharge of an electric torch electrode is moved from within the opening of the shielding plate and bonded to the semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61183385A JPS6340330A (en) | 1986-08-06 | 1986-08-06 | Bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61183385A JPS6340330A (en) | 1986-08-06 | 1986-08-06 | Bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6340330A true JPS6340330A (en) | 1988-02-20 |
Family
ID=16134846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61183385A Pending JPS6340330A (en) | 1986-08-06 | 1986-08-06 | Bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6340330A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5295619A (en) * | 1992-05-22 | 1994-03-22 | Rohm Co., Ltd. | Method and apparatus for performing wire bonding by using solder wire |
| US5431329A (en) * | 1993-05-21 | 1995-07-11 | Rohm Co., Ltd. | Method of forming a ball end for a solder wire |
-
1986
- 1986-08-06 JP JP61183385A patent/JPS6340330A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5395037A (en) * | 1992-04-22 | 1995-03-07 | Rohm Co., Ltd. | Method and apparatus for performing wire bonding by using solder wire |
| US5295619A (en) * | 1992-05-22 | 1994-03-22 | Rohm Co., Ltd. | Method and apparatus for performing wire bonding by using solder wire |
| US5431329A (en) * | 1993-05-21 | 1995-07-11 | Rohm Co., Ltd. | Method of forming a ball end for a solder wire |
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