JPS6337837A - Magneto-optical recording medium and its production - Google Patents
Magneto-optical recording medium and its productionInfo
- Publication number
- JPS6337837A JPS6337837A JP17965586A JP17965586A JPS6337837A JP S6337837 A JPS6337837 A JP S6337837A JP 17965586 A JP17965586 A JP 17965586A JP 17965586 A JP17965586 A JP 17965586A JP S6337837 A JPS6337837 A JP S6337837A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic film
- film
- magneto
- optical recording
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 10
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 9
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 238000002513 implantation Methods 0.000 abstract description 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 84
- 239000010410 layer Substances 0.000 description 21
- 230000001681 protective effect Effects 0.000 description 11
- -1 nitrogen ions Chemical class 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910015183 FeNx Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、磁性膜表面の保護手段の改良を図った光磁
気記録媒体とその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magneto-optical recording medium with an improved means for protecting the surface of a magnetic film, and a method for manufacturing the same.
光磁気記録媒体用の磁性膜として最も有望なものは、希
土類元素（例えばＧｄ 、Ｔｂ 、ＤＶ等）と遷移金属
元素（例えばＦｅ 、Ｃｏ等）とのアモルファス合金（
薄）膜であるが、そのような磁性膜は酸化劣化を生じ易
く耐食性に欠けるという欠点がある。The most promising magnetic films for magneto-optical recording media are amorphous alloys of rare earth elements (e.g. Gd, Tb, DV, etc.) and transition metal elements (e.g. Fe, Co, etc.).
However, such magnetic films have the drawback of being susceptible to oxidative deterioration and lacking in corrosion resistance.
そのため従来から、磁性膜表面の酸化の進行を防ぐため
に、磁性膜の表面を保護膜で覆うという手段が検討され
ており、この保護膜の材質としては５ｉＯ１ＳｉＯ□、
Ａ ｌ ２０ ：ｌ 、Ａ Ｉ Ｎ 、 Ｓ ｉ ３
Ｎ 、、ＺｎＳ等が報告されている。Therefore, in order to prevent the progression of oxidation on the surface of the magnetic film, methods of covering the surface of the magnetic film with a protective film have been considered, and the materials for this protective film include 5iO1SiO□,
A l 20 : l , A I N , S i 3
N,, ZnS, etc. have been reported.
上記のような磁性膜は例えば高周波スパッタ法、マグネ
トロンスパッタ法、真空蒸着法等によって形成され、上
記のような保護膜は例えば高周波スバッタ法、反応性ス
パッタ法、ＣＶＤ法等によって形成されるが、−膜内に
、磁性膜の成膜速度に比べて保護膜の成膜速度は１１５
〜１／３程度と非常に遅い。これは簡単に言えば、保護
膜形成材料が絶縁物であるためスパンタレート等が小さ
いことに起因する。The above-mentioned magnetic film is formed by, for example, a high-frequency sputtering method, a magnetron sputtering method, a vacuum evaporation method, etc., and the above-mentioned protective film is formed by, for example, a high-frequency sputtering method, a reactive sputtering method, a CVD method, etc. - The film formation speed of the protective film is 115% compared to the film formation speed of the magnetic film.
It is very slow at ~1/3. Simply put, this is due to the fact that the protective film forming material is an insulator and therefore has small amounts of spuntalate and the like.
そのため、光磁気記録媒体を連続的に製造する場合、そ
のスループットを左右するのは保護膜の成膜時間となっ
ており、これが量産化に対して大きな障害となっている
。例えば、４インチの高周波マグネトロンスパッタ法で
Ｓｉ○を成膜する場合の成膜速度は約５０＾／ｍｉｎで
あり、約Ｉｏｎｍ厚の保護膜形成に約２０分もかかり非
常に遅い。Therefore, when magneto-optical recording media are manufactured continuously, the throughput is determined by the time required to form the protective film, which is a major obstacle to mass production. For example, when forming a 4-inch Si◯ film by high-frequency magnetron sputtering, the film formation rate is about 50^/min, which is extremely slow as it takes about 20 minutes to form a protective film with a thickness of about Ionm.
そこでこの発明は、成膜速度の遅い上記のような保護膜
とは別の手段によって磁性膜の耐食性の改善を図った光
磁気記録媒体とその製造方法を提供することを目的とす
る。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a magneto-optical recording medium and a method for manufacturing the same, in which the corrosion resistance of a magnetic film is improved by means other than the above-mentioned protective film, which has a slow film formation rate.
この発明の光磁気記録媒体は、基体上に設けられた希土
類元素と遷移金属元素とのアモルファス合金から成る磁
性膜の表面に、当該磁性膜を構成する元素の窒化物層を
形成していることを特徴とする。In the magneto-optical recording medium of the present invention, a nitride layer of an element constituting the magnetic film is formed on the surface of a magnetic film made of an amorphous alloy of a rare earth element and a transition metal element provided on a substrate. It is characterized by
この発明の第１の製造方法は、基体上に設けられた希土
類元素と遷移金属元素とのアモルファス合金から成る磁
性膜の表面に窒素イオンビームを照射することによって
、当該磁性膜の表面に磁性膜を構成する元素の窒化物層
を形成することを特徴とする。The first manufacturing method of the present invention is to irradiate the surface of a magnetic film made of an amorphous alloy of a rare earth element and a transition metal element provided on a substrate with a nitrogen ion beam, thereby forming a magnetic film on the surface of the magnetic film. It is characterized by forming a nitride layer of elements constituting the .
この発明の第２の製造方法は、基体上に設けられた希土
類元素と遷移金属元素とのアモルファス合金から成る磁
性膜の表面に窒素プラズマを照射することによって、当
該磁性膜の表面に磁性膜を構成する元素の窒化物層を形
成することを特徴とする。A second manufacturing method of the present invention is to form a magnetic film on the surface of the magnetic film by irradiating nitrogen plasma onto the surface of the magnetic film made of an amorphous alloy of rare earth elements and transition metal elements provided on a substrate. It is characterized by forming a nitride layer of the constituent elements.
この発明の光磁気記録媒体においては、磁性膜を構成す
る元素の窒化物層によって磁性膜の表面が保護されるた
め、磁性膜の耐食性が向上する。In the magneto-optical recording medium of the present invention, the surface of the magnetic film is protected by the nitride layer of the element constituting the magnetic film, so that the corrosion resistance of the magnetic film is improved.
この発明の第１の製造方法によれば、窒素イオンビーム
照射によって窒素イオンが磁性膜表面に注入され、それ
によって当該表面に磁性膜を構成する元素の窒化物層が
形成される。According to the first manufacturing method of the present invention, nitrogen ions are implanted into the surface of the magnetic film by nitrogen ion beam irradiation, thereby forming a nitride layer of the element constituting the magnetic film on the surface.
この発明の第２の製造方法によれば、窒素プラズマ中の
窒素イオンが磁性膜表面に注入され、それによって当該
表面に磁性膜を構成する元素の窒化物層が形成される。According to the second manufacturing method of the present invention, nitrogen ions in nitrogen plasma are injected into the surface of the magnetic film, thereby forming a nitride layer of the elements constituting the magnetic film on the surface.
第１図は、この発明に係る光磁気記録媒体の一例を部分
的に示す断面図である。この光磁気記録媒体２は、基体
４上に誘電体膜６を介して磁性膜８を設けており、そし
て当該磁性膜８の表面に磁性膜８を構成する元素の窒化
物層１０を形成している。FIG. 1 is a sectional view partially showing an example of a magneto-optical recording medium according to the present invention. This magneto-optical recording medium 2 has a magnetic film 8 provided on a substrate 4 via a dielectric film 6, and a nitride layer 10 of the elements constituting the magnetic film 8 is formed on the surface of the magnetic film 8. ing.
基体４は例えばガラス基板であり、その形態としてはデ
ィスク状等の種々のものが採り得る。The base body 4 is, for example, a glass substrate, and can take various shapes such as a disk shape.
基体４と磁性膜８間には、必要に応じてこの例のように
誘電体膜６を設けたり、他の膜を設けたりしても良いが
、それらを設けずに基体４上に直接磁性膜８を設けても
良い。ちなみにこの誘電体膜６は、基体４側から光を入
射させて磁性膜８における反射光を利用する場合に出力
をエンハンスメントする働きや、基体４側からの磁性膜
８への酸素の浸入を防ぐ働き等をする。If necessary, a dielectric film 6 may be provided between the base 4 and the magnetic film 8 as in this example, or another film may be provided between the base 4 and the magnetic film 8. A membrane 8 may also be provided. Incidentally, this dielectric film 6 serves to enhance the output when light is incident from the base 4 side and the reflected light from the magnetic film 8 is used, and also to prevent oxygen from entering the magnetic film 8 from the base 4 side. work etc.
磁性膜８は、前述したような希土類元素と遷移金属元素
とのアモルファス合金から成る。当該磁性膜８は、この
例のように単層であっても、あるいは必要に応じて多層
化されていても良い。The magnetic film 8 is made of an amorphous alloy of rare earth elements and transition metal elements as described above. The magnetic film 8 may be a single layer as in this example, or may be multilayered as necessary.
窒化物層１０は、例えばＦｅＮｘや希土類元素の窒化物
等から成る。The nitride layer 10 is made of, for example, FeNx or a nitride of a rare earth element.
上記のような光磁気記録媒体２においては、窒化物層ｌ
Ｏによって磁性膜８の表面が酸化等から保護されるため
、磁性膜８の耐食性が向上する。In the magneto-optical recording medium 2 as described above, the nitride layer l
Since the surface of the magnetic film 8 is protected from oxidation and the like by O, the corrosion resistance of the magnetic film 8 is improved.
しかもこの窒化物層１０は、従来の保護膜の場合のよう
に別の薄膜を堆積させるのと違って、磁性膜８の表面の
みの窒化処理によって形成することができるので、短時
間で形成することができる。Moreover, this nitride layer 10 can be formed in a short time because it can be formed by nitriding only the surface of the magnetic film 8, unlike depositing another thin film as in the case of a conventional protective film. be able to.
従って、このような光磁気記録媒体２を連続的に製造す
る場合の生産性（スループット）は、従来の光磁気記録
媒体を製造する場合に比べて向上する。Therefore, the productivity (throughput) when continuously manufacturing such magneto-optical recording media 2 is improved compared to when manufacturing conventional magneto-optical recording media.
次に上記のような光磁気記録媒体２の製造方法の例を第
２図あるいは第３図を参照して説明する（但し、以下に
おいては前述した誘電体膜６を設けないものを例に説明
する。）。Next, an example of a method for manufacturing the magneto-optical recording medium 2 as described above will be explained with reference to FIG. 2 or FIG. do.).
第２図は、窒素イオンビーム照射による方法を実施する
装置の例を示す。即ち、前述したような基体４上に磁性
膜８を形成したものがホルダ１４に取り付けられて真空
容器１２内に収納されており、当該磁性膜８に向けてイ
オン源１６が配置されている。イオンａ１６は例えばい
わゆるパケット型イオン源であり、均一で大面積の窒素
イオンビーム１８を磁性膜８の表面に照射することがで
きる。FIG. 2 shows an example of an apparatus for carrying out the method using nitrogen ion beam irradiation. That is, a substrate 4 as described above with a magnetic film 8 formed thereon is attached to a holder 14 and housed in a vacuum container 12, and an ion source 16 is arranged facing the magnetic film 8. The ions a16 are, for example, a so-called packet type ion source, and can irradiate the surface of the magnetic film 8 with a uniform, large-area nitrogen ion beam 18.
処理に際しては、真空容器１２を高真空（例えば１０−
’〜１０−’Ｔ ｏ ｒ ｒ程度）に排気した後、イオ
ン源１６からの窒素イオンビーム１８を磁性膜８の表面
に照射する。これによって、窒素イオンが磁性膜８の表
面に注入され、磁性膜８の表面に当該磁性膜８を構成す
る元素の窒化物！１０（第１図参照）が形成される。During processing, the vacuum container 12 is placed in a high vacuum (for example, 10-
After evacuation to a temperature of approximately 10-10 Torr), the surface of the magnetic film 8 is irradiated with a nitrogen ion beam 18 from the ion source 16. As a result, nitrogen ions are implanted into the surface of the magnetic film 8, and nitrides of the elements constituting the magnetic film 8 are deposited on the surface of the magnetic film 8! 10 (see FIG. 1) is formed.
その場合、窒素イオンビーム１８のエネルギーは、５０
Ｋｅｖを越えると窒素イオンの注入深さが深くなり磁性
膜８の磁気特性を劣化させる恐れが出てくるので、５０
ＫｅＶ以下、特に２０ＫｅＶ〜５００ｅＶ程度の範囲内
にするのが好ましい。In that case, the energy of the nitrogen ion beam 18 is 50
If Kev is exceeded, the implantation depth of nitrogen ions becomes deep and there is a risk of deteriorating the magnetic properties of the magnetic film 8.
KeV or less, particularly preferably within a range of about 20 KeV to 500 eV.
また、窒素イオンの注入量は、１０１２個／ｃｍ”未満
の場合は、磁性膜８の表面全体が窒化物層１０で被覆さ
れないため耐食性が悪く、逆に１０１８個／ｃｍ”を越
えると、磁性膜８の表面に窒素ガスによるボイドが生成
して磁気特性を劣化されるため、１０′２〜１０１８個
／ｃｍ２の範囲内にするのが好ましい。If the amount of nitrogen ions implanted is less than 1012 ions/cm", the entire surface of the magnetic film 8 will not be covered with the nitride layer 10, resulting in poor corrosion resistance. Conversely, if the amount of nitrogen ions implanted exceeds 1018 ions/cm", the magnetic film 8 will not be covered with the nitride layer 10, resulting in poor corrosion resistance. Since voids due to nitrogen gas are generated on the surface of the film 8 and the magnetic properties are deteriorated, the number is preferably within the range of 10'2 to 1018 voids/cm2.
尚、上記処理に際しては、基体４および磁性膜８の温度
上昇による変形、特性劣化等を防止するため、ホルダ１
４に冷却水等の冷却媒体を供給して基体４および磁性膜
８を冷却するようにしても良い。In addition, during the above processing, in order to prevent deformation and characteristic deterioration of the base 4 and the magnetic film 8 due to temperature rise,
The base body 4 and the magnetic film 8 may be cooled by supplying a cooling medium such as cooling water to the magnetic film 4 .
上記のような方法によれば、洒単にしかも短時間で、磁
性膜８の表面に窒化物層１０を形成することができる。According to the method described above, the nitride layer 10 can be formed on the surface of the magnetic film 8 in a stylish manner and in a short time.
しかもこの窒化物層１０は、磁性膜８０表面から深さ方
向に形成されるため、それの剥離の問題も無い。Furthermore, since the nitride layer 10 is formed in the depth direction from the surface of the magnetic film 80, there is no problem of its peeling off.
具体的な実験例を示せば、上記のような方法に基づいて
、ＴｂＦｅ合金の磁性膜の表面に、窒素イオンビームを
５００ｅＶのエネルギー、１０ｍＡのビーム電流で５分
間照射して表面を窒化した。To give a specific experimental example, based on the method described above, the surface of a TbFe alloy magnetic film was irradiated with a nitrogen ion beam at an energy of 500 eV and a beam current of 10 mA for 5 minutes to nitridize the surface.
この磁性膜を、温度８０℃、湿度８０％の恒温層内で加
速劣化させたところ、何ら異常は認められなかった。つ
まり、磁性膜８の表面の保護する手段を形成する時間が
、従来では保護膜形成のために２０分も要していたもの
が、この例では５分に短縮できたことになる。When this magnetic film was subjected to accelerated deterioration in a constant temperature layer at a temperature of 80° C. and a humidity of 80%, no abnormality was observed. In other words, the time required to form a means for protecting the surface of the magnetic film 8, which conventionally required 20 minutes to form a protective film, can be reduced to 5 minutes in this example.
第３図は、窒素プラズマ照射による方法を実施する装置
の例を示す。即ち、真空容器１２内で、陰極兼用のホル
ダ１４と陽極２０とを対向させて、両者間に直流電源２
２を接続しており、ホルダ１４上には、前述したような
基体４上に磁性膜８を形成したものが保持されている。FIG. 3 shows an example of an apparatus for carrying out the method using nitrogen plasma irradiation. That is, in the vacuum container 12, the holder 14 which also serves as a cathode and the anode 20 are opposed to each other, and the DC power supply 2 is connected between them.
2 are connected to each other, and a magnetic film 8 formed on the base 4 as described above is held on the holder 14.
処理に際しては、真空容器１２内に窒素ガスＧを導入し
て真空容器１２内の圧力を１〜１０−”Ｔｏｒｒ程度に
保ち、ホルダ１４と陽極２０間に直流電源２２から直流
電圧を印加すると、両者間に放電が生じて窒素プラズマ
２４が生成される。そして、窒素プラズマ２４中の窒素
イオンが電界の作用で陰極側に引きつけられて磁性膜８
の表面に注入され、それによって磁性膜８の表面に当該
磁性膜８を構成する元素の窒化物層１０ （第１図参照
）が形成される。During the process, nitrogen gas G is introduced into the vacuum container 12 to maintain the pressure inside the vacuum container 12 at about 1 to 10-'' Torr, and a DC voltage is applied from the DC power supply 22 between the holder 14 and the anode 20. A discharge occurs between the two to generate nitrogen plasma 24.Nitrogen ions in the nitrogen plasma 24 are attracted to the cathode side by the action of the electric field, and the magnetic film 8
As a result, a nitride layer 10 (see FIG. 1) of the elements constituting the magnetic film 8 is formed on the surface of the magnetic film 8.
その場合、ホルダ１４と陽極２０間に印加する電圧は、
それがあまり大きいと窒素イオンによる磁性膜８の表面
のスパフタリングや不所望な温度上昇が生じるため、５
０〜５００Ｖ程度の範囲内にするのが好ましい。In that case, the voltage applied between the holder 14 and the anode 20 is
If it is too large, sputtering on the surface of the magnetic film 8 due to nitrogen ions and an undesirable temperature rise will occur.
It is preferable to set it within the range of about 0 to 500V.
上記のような方法によっても、簡単にしかも短時間で、
磁性膜８の表面に窒化物層１０を形成することができる
。またこの方法の場合も、窒化物層１０は磁性膜８の表
面から深さ方向に形成されるため、その剥離の問題も無
い。With the above method, it can be done easily and in a short time.
A nitride layer 10 can be formed on the surface of the magnetic film 8. Also in this method, since the nitride layer 10 is formed in the depth direction from the surface of the magnetic film 8, there is no problem of its peeling.
以上のようにこの発明に係る光磁気記録媒体においては
、窒化物層によって磁性膜表面が保護されるため、当Ｂ
ｔＡ４ｎ性膜の耐食性が向上する。しかも、従来のよう
な成膜速度の遅い保護膜が不用となるため、当該光磁気
記録媒体を製造する場合の生産性も向上する。As described above, in the magneto-optical recording medium according to the present invention, the surface of the magnetic film is protected by the nitride layer.
The corrosion resistance of the tA4n film is improved. Moreover, since the conventional protective film, which is slow to form, is not required, the productivity in manufacturing the magneto-optical recording medium is also improved.
また、この発明に係る製造方法によれば、簡単にしかも
短時間で、上記のような光磁気記録媒体を製造すること
ができる。しかもこの方法による窒化物層には剥離の問
題が無い。Further, according to the manufacturing method according to the present invention, the above magneto-optical recording medium can be manufactured simply and in a short time. Moreover, the nitride layer produced by this method does not suffer from peeling problems.
第１図は、この発明に係る光磁気記録媒体の一例を部分
的に示す断面図である。第２図および第３図は、それぞ
れ、この発明に係る製造方法を実施する装置の例を示す
概略図である。
２、・・この発明に係る光磁気記録媒体、４・・・基体
、８１．・磁性膜、１０・・・窒化物層、１８・・、窒
素イオンビーム、２４・・・窒素プラズマ。FIG. 1 is a sectional view partially showing an example of a magneto-optical recording medium according to the present invention. FIGS. 2 and 3 are schematic diagrams each showing an example of an apparatus for carrying out the manufacturing method according to the present invention. 2... Magneto-optical recording medium according to the present invention, 4... Substrate, 81. -Magnetic film, 10...Nitride layer, 18...Nitrogen ion beam, 24...Nitrogen plasma.
Claims (3)
のアモルファス合金から成る磁性膜の表面に、当該磁性
膜を構成する元素の窒化物層を形成していることを特徴
とする光磁気記録媒体。(1) A magneto-optical device characterized in that a nitride layer of an element constituting the magnetic film is formed on the surface of a magnetic film made of an amorphous alloy of a rare earth element and a transition metal element provided on a substrate. recoding media.
のアモルファス合金から成る磁性膜の表面に窒素イオン
ビームを照射することによって、当該磁性膜の表面に磁
性膜を構成する元素の窒化物層を形成することを特徴と
する光磁気記録媒体の製造方法。(2) By irradiating the surface of a magnetic film made of an amorphous alloy of rare earth elements and transition metal elements provided on a substrate with a nitrogen ion beam, nitrides of the elements constituting the magnetic film are formed on the surface of the magnetic film. A method for manufacturing a magneto-optical recording medium, which comprises forming a layer.
のアモルファス合金から成る磁性膜の表面に窒素プラズ
マを照射することによって、当該磁性膜の表面に磁性膜
を構成する元素の窒化物層を形成することを特徴とする
光磁気記録媒体の製造方法。(3) By irradiating the surface of a magnetic film made of an amorphous alloy of rare earth elements and transition metal elements provided on a substrate with nitrogen plasma, a nitride layer of the element constituting the magnetic film is formed on the surface of the magnetic film. 1. A method for manufacturing a magneto-optical recording medium, the method comprising: forming a magneto-optical recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17965586A JPS6337837A (en) | 1986-07-30 | 1986-07-30 | Magneto-optical recording medium and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17965586A JPS6337837A (en) | 1986-07-30 | 1986-07-30 | Magneto-optical recording medium and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6337837A true JPS6337837A (en) | 1988-02-18 |
Family
ID=16069567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17965586A Pending JPS6337837A (en) | 1986-07-30 | 1986-07-30 | Magneto-optical recording medium and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6337837A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5019462A (en) * | 1988-02-02 | 1991-05-28 | Basf Aktiengesellschaft | Sheet-like, multilayer magneto-optical recording material |
-
1986
- 1986-07-30 JP JP17965586A patent/JPS6337837A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5019462A (en) * | 1988-02-02 | 1991-05-28 | Basf Aktiengesellschaft | Sheet-like, multilayer magneto-optical recording material |
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