JPS6337522B2 - - Google Patents
Info
- Publication number
- JPS6337522B2 JPS6337522B2 JP13487082A JP13487082A JPS6337522B2 JP S6337522 B2 JPS6337522 B2 JP S6337522B2 JP 13487082 A JP13487082 A JP 13487082A JP 13487082 A JP13487082 A JP 13487082A JP S6337522 B2 JPS6337522 B2 JP S6337522B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- dielectric resonator
- oscillation
- frequency
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
- H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/01—Varying the frequency of the oscillations by manual means
- H03B2201/014—Varying the frequency of the oscillations by manual means the means being associated with an element comprising distributed inductances and capacitances
- H03B2201/017—Varying the frequency of the oscillations by manual means the means being associated with an element comprising distributed inductances and capacitances the element being a dielectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はマイクロ波帯通信装置に使用するに
適する発振器に関する。特に、誘電体振振器の発
振周波数を安定化した発振器の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an oscillator suitable for use in a microwave band communication device. In particular, the present invention relates to improvements in oscillators that stabilize the oscillation frequency of dielectric oscillators.
高い無負荷Ｑを持ち温度特性安定な誘電体共振
器を使用して、発振周波数を安定化した発振器
は、その構成が簡素であり、低価格かつ小型に製
造できるので広く使用されている。従来のこの種
の発振器では、一般に発振周波数を大きく変更す
る際には、誘電体共振器を交換しなければならな
い。
Oscillators whose oscillation frequency is stabilized by using a dielectric resonator with a high no-load Q and stable temperature characteristics are widely used because they have a simple configuration and can be manufactured at low cost and small size. In conventional oscillators of this type, it is generally necessary to replace the dielectric resonator when changing the oscillation frequency significantly.
発振周波数を大きく変更する必要のある発振器
の構成要素に関しては、周波数を決定するための
要素を除き、周波数に依存する要素が少なく広帯
域にわたり同調可能とすることが望ましい。例え
ば、誘電体共振器によつて発振周波数を安定化し
た発振器において、周波数の決定要素である誘電
体共振器のみを交換することによつて容易に発振
周波数を変更することが可能であれば、誘電体共
振器以外の構成部品を広い周波数帯域にわたり共
通化することができ、その量産効果で低価格化で
きるなどの利点がある。 Regarding the components of the oscillator that require large changes in the oscillation frequency, it is desirable to have fewer frequency-dependent elements and to be able to tune over a wide band, except for the elements for determining the frequency. For example, in an oscillator whose oscillation frequency is stabilized by a dielectric resonator, if it is possible to easily change the oscillation frequency by replacing only the dielectric resonator, which is the element that determines the frequency, Components other than the dielectric resonator can be made common over a wide frequency band, and the cost can be reduced due to the mass production effect.
マイクロ波帯での使用に適した誘電体共振器の
励振モードであるTE01モードにおいて、完全な
モードでないのでδをつけて呼称されている
TE01δモードでは、大きい誘電率による「磁気
壁」によつて磁界結合のみが可能なため、一般に
分布定数の線路などを介在させて結合励振させる
手段が用いられている。誘電体共振器と線路の結
合度は誘電体共振器と線路の距離や上記線路の特
性インピーダンスなどで決定され、用途に応じて
誘電体共振器を最適な外部Ｑの条件で使用するよ
うに結合度が設定される。 In the TE01 mode, which is the excitation mode of a dielectric resonator suitable for use in the microwave band, it is called with a δ because it is not a perfect mode.
In the TE01δ mode, only magnetic field coupling is possible through a "magnetic wall" with a large dielectric constant, so generally a means for coupled excitation using a distributed constant line or the like is used. The degree of coupling between the dielectric resonator and the line is determined by the distance between the dielectric resonator and the line, the characteristic impedance of the line, etc., and the coupling is done so that the dielectric resonator is used under the optimum external Q conditions depending on the application. degree is set.
さらにこれを発振器とする場合には、誘電体共
振器と線路の結合が最大となる点、すなわち誘電
体共振器と線路の至近点と線路に接続された発振
用能動素子までの線路長を最適に選ぶ必要があ
り、この最適線路長は発振周波数および発振用能
動素子の動作インピーダンスに大きく依存する。
これは発振用能動素子へ帰還される電力の位相を
最適発振条件にするための線路長が存在するから
であり、発振周波数を変更する場合にはこの線路
長も変更する必要がある。 Furthermore, when using this as an oscillator, the line length from the point where the coupling between the dielectric resonator and the line is maximum, that is, the closest point between the dielectric resonator and the line, to the oscillation active element connected to the line, is optimized. The optimum line length depends largely on the oscillation frequency and the operating impedance of the oscillation active element.
This is because there is a line length that makes the phase of the power fed back to the oscillation active element an optimal oscillation condition, and when changing the oscillation frequency, this line length must also be changed.
一方、発振用能動素子は、通常広帯域な増幅利
得特性を有するので、所要発振周波数以外での寄
生共振の影響を受けて異常発振等の障害を発生さ
せることがあり、これを防ぐために発振用能動素
子が接続された線路のもう一方の端を抵抗終端す
る方法が有効であることが知られている。この抵
抗終端によつて、発振周波数以外での広帯域にわ
たり終端されるので、発振周波数を大きく変更し
た場合にも安定な発振が得られ易い利点を有す
る。 On the other hand, active elements for oscillation usually have wideband amplification gain characteristics, so they may be affected by parasitic resonance at frequencies other than the required oscillation frequency, causing problems such as abnormal oscillation. It is known that it is effective to terminate the other end of the line connected to the element with a resistor. This resistive termination provides termination over a wide band other than the oscillation frequency, so it has the advantage that stable oscillation can be easily obtained even when the oscillation frequency is changed significantly.
また一定の誘電体共振器を用いて、ある程度の
周波数変更は金属壁を誘電体共振器に接近させる
ことで可能であり、金属壁のかわりに金属ネジ等
を誘電体共振器に接近させ、周波数連続可変でか
つ任意の周波数に固定できる構造も広く用いられ
ている。前述のように発振周波数を変更する際に
は、線路上の誘電体共振器との至近点から発振用
能動素子までの線路長を最適長に合わせる必要が
ある。この操作を誘電体共振器の位置を移動させ
ることによつて実施すると、周波数可変に用いる
金属ネジとの相対位置も変化することになる。こ
の結果、金属ネジを用いて実効的に同等の周波数
変化を得ようとする場合には、誘電体共振器の位
置により誘電体共振器と金属ネジの設定距離が変
化する。 Also, using a certain dielectric resonator, it is possible to change the frequency to a certain extent by bringing a metal wall close to the dielectric resonator. Structures that are continuously variable and can be fixed at any desired frequency are also widely used. When changing the oscillation frequency as described above, it is necessary to adjust the line length from the closest point to the dielectric resonator on the line to the oscillation active element to the optimum length. If this operation is performed by moving the position of the dielectric resonator, the relative position with respect to the metal screw used for frequency variation will also change. As a result, when attempting to obtain an effectively equivalent frequency change using a metal screw, the set distance between the dielectric resonator and the metal screw changes depending on the position of the dielectric resonator.
例えば、発振周波数に応じて誘電体共振器の位
置を移動させ金属ネジとの距離が遠ざかれば周波
数の変更をするための金属ネジの効き方が小さく
なるので、同等の周波数可変幅を得るために金属
ネジと誘電体共振器間の距離変化を大きくする必
要がある。一方誘電体共振器と金属ネジとの距離
は、それらを支持する発振器筐体も含めた各々の
線膨張係数に応じて環境温度で変化し、発振周波
数の変動要素となる。従つて誘電体共振器を交換
して、発振周波数を大きく変更し、誘電体共振器
の位置を移動させて前記線路長を発振最適条件に
合わせた上、前記金属ネジで発振周波数可変幅を
確保した場合に、発振周波数の設定条件によつて
は発振周波数の温度変動が大きくなる問題が発生
する。 For example, if the position of the dielectric resonator is moved according to the oscillation frequency and the distance from the metal screw increases, the effectiveness of the metal screw for changing the frequency will decrease, so in order to obtain the same frequency variable width, Therefore, it is necessary to increase the distance change between the metal screw and the dielectric resonator. On the other hand, the distance between the dielectric resonator and the metal screw varies depending on the environmental temperature depending on the coefficient of linear expansion of each element including the oscillator housing that supports them, and becomes a variable factor in the oscillation frequency. Therefore, the dielectric resonator is replaced to greatly change the oscillation frequency, the position of the dielectric resonator is moved to match the line length to the optimum oscillation condition, and the oscillation frequency variable width is secured using the metal screw. In this case, depending on the setting conditions of the oscillation frequency, a problem arises in that the temperature fluctuation of the oscillation frequency increases.
これを改良するために周波数調整用の金属ネジ
を誘電体共振器の移動量に合わせて同様にその位
置を移動させることは構造が複雑になるばかり
か、その位置の設定も難しく高価になる欠点があ
る。 To improve this, moving the metal screw for frequency adjustment in the same way as the amount of movement of the dielectric resonator would not only complicate the structure, but also make setting the position difficult and expensive. There is.
本発明は、これを改良するもので、一つの回路
構造で、共振器の周波数を変更して、広い周波数
範囲にわたり安定に発振周波数を変更することの
できる誘電体共振器制御発振器を提供することを
目的とする。
The present invention improves this by providing a dielectric resonator controlled oscillator that can stably change the oscillation frequency over a wide frequency range by changing the frequency of the resonator with a single circuit structure. With the goal.
本発明は、線路と、この線路の一端に接続され
た発振用能動素子と、この線路の他端に接続され
た終端器と、この線路に結合する誘電体共振器と
が発振器筐体の内部に実装され、この発振器筐体
に取付けられ誘電体共振器に対向し誘電体共振器
との間隔を調節できる構造の周波数調整金属ネジ
とを備えた誘電体共振器制御発振器であり、
その特徴の第一は、線路、発振用能動素子およ
び終端器とがひとつの支持台に固定的に配置され
たところにある。
In the present invention, a line, an oscillating active element connected to one end of this line, a terminator connected to the other end of this line, and a dielectric resonator coupled to this line are arranged inside an oscillator housing. This is a dielectric resonator controlled oscillator that is mounted on the oscillator housing and has a frequency adjustment metal screw that faces the dielectric resonator and has a structure that allows adjustment of the distance between the dielectric resonator and the dielectric resonator. The first is that the line, the oscillating active element, and the terminator are fixedly arranged on one support.
さらにその特徴の第二は、この支持台の発振器
筐体に対する取付け構造は、誘電体共振器と線路
の結合点から発振用能動素子までの線路長を、設
定された周波数に対して最適値に調節するために
この支持台が前記線路長の方向に移動可能な構造
としたところにある。 Furthermore, the second feature is that the mounting structure of this support base to the oscillator case optimizes the line length from the connection point of the dielectric resonator and line to the oscillation active element to the optimum value for the set frequency. In order to make adjustments, this support is structured to be movable in the direction of the line length.
本発明の構造では誘電体共振器の発振周波数を
変更した後に、上記支持台を移動させて発振最適
線路長に合わせる。誘電体共振器と周波数可変用
の金属ネジの位置は固定構造でよい。能動素子、
線路および終端器を搭載した回路は広い周波数範
囲にわたり均一に製造できる。またこの均一に製
造された回路を用いるから広い周波数範囲にわた
り温度特性の均一な装置が得られる。
In the structure of the present invention, after changing the oscillation frequency of the dielectric resonator, the support base is moved to match the optimum oscillation line length. The positions of the dielectric resonator and the metal screw for frequency variation may be fixed. active element,
Circuits containing lines and terminators can be manufactured uniformly over a wide frequency range. Furthermore, since this uniformly manufactured circuit is used, a device with uniform temperature characteristics over a wide frequency range can be obtained.
以下、本発明の実施例を添付図面を参照して説
明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明実施例装置の構造図である。こ
の例は発振用能動素子にバイポーラ・トランジス
タを使用した誘電体共振器制御発振器の回路構成
例であつて、誘電体共振器１に磁界結合させた線
路２の一端に、発振用トランジスタ３のベース電
極を接続し、この線路２の他端にベース・バイア
ス電圧阻止用のコンデンサ５を介して、抵抗終端
器４が接続されている。線路２、発振用トランジ
スタ３、コンデンサ５、抵抗終端器４はひとつの
膜回路基板６に搭載されている。発振出力はルー
プ・アンテナ７を介して同軸接栓８より取り出さ
れる。第１図では発振用トランジスタのバイアス
回路を省略して表示している。 FIG. 1 is a structural diagram of an apparatus according to an embodiment of the present invention. This example is a circuit configuration example of a dielectric resonator controlled oscillator using a bipolar transistor as an active element for oscillation. A resistive terminator 4 is connected to the other end of the line 2 via a capacitor 5 for blocking a base bias voltage. The line 2, the oscillation transistor 3, the capacitor 5, and the resistor terminator 4 are mounted on one membrane circuit board 6. The oscillation output is extracted from a coaxial plug 8 via a loop antenna 7. In FIG. 1, the bias circuit for the oscillation transistor is omitted.
この構造では、誘電体共振器１と線路２との至
近点から、発振用トランジスタ３までの距離ｌの
最適値は、発振周波数およびベース端子から発振
用トランジスタ３を見たときの動作インピーダン
スによつて決まる。したがつて誘電体共振器１を
交換して発振周波数を変更しようとする場合に
は、距離ｌも変化させる必要がある。 In this structure, the optimum value of the distance l from the closest point between the dielectric resonator 1 and the line 2 to the oscillation transistor 3 depends on the oscillation frequency and the operating impedance when looking at the oscillation transistor 3 from the base terminal. It will be decided. Therefore, when changing the oscillation frequency by replacing the dielectric resonator 1, it is necessary to change the distance l as well.
第２図は本発明実施例の誘電体共振器制御発振
器の内部構造を示す平面図である。第３図は第２
図中の―線部の断面図である。誘電体共振器
１に磁界結合される線路２は膜回路基板６の上に
形成され、さらに発振用トランジスタ３、コンデ
ンサ５、抵抗終端器４も膜回路基板６の上に搭載
されている。膜回路基板６は支持台１１の上に載
せられ、支持台１１は発振器筐体９にネジ１２で
固定される構造となつている。 FIG. 2 is a plan view showing the internal structure of the dielectric resonator controlled oscillator according to the embodiment of the present invention. Figure 3 is the second
It is a sectional view taken along the line - in the figure. A line 2 magnetically coupled to the dielectric resonator 1 is formed on a membrane circuit board 6, and an oscillation transistor 3, a capacitor 5, and a resistive terminator 4 are also mounted on the membrane circuit board 6. The membrane circuit board 6 is placed on a support 11, and the support 11 is fixed to the oscillator housing 9 with screws 12.
発振器筐体９の上ブタ１４には、周波数調整用
の金属ネジ１０が誘電体共振器１と中心線が同一
になるように取り付けられている。発振器筐体９
にあけられたネジ１２の貫通穴１３は、第２図中
破線に示すように長円に形成されるところに特徴
がある。すなわち、ネジ１２をゆるめることによ
り、第３図に示すl1，l2だけ支持台１１の位置を
移動することができる。したがつて第２図に示す
線路長ｌは最大ｌ＋l2、最小ｌ−l1の間で可変と
なる。この区間内ではネジ１２を締めることによ
り支持台１１を発振器筐体９に固定できる。この
ように支持台を移動しても金属ネジ１０と誘電体
共振器１の位置関係は不変である。 A metal screw 10 for frequency adjustment is attached to the upper lid 14 of the oscillator housing 9 so that its center line is the same as that of the dielectric resonator 1. Oscillator housing 9
The through hole 13 of the screw 12 drilled in is characterized in that it is formed into an oval shape as shown by the broken line in FIG. That is, by loosening the screw 12, the position of the support base 11 can be moved by l 1 and l 2 shown in FIG. Therefore, the line length l shown in FIG. 2 is variable between a maximum of l+l 2 and a minimum of l-l 1 . Within this section, the support base 11 can be fixed to the oscillator housing 9 by tightening the screws 12. Even if the support base is moved in this manner, the positional relationship between the metal screw 10 and the dielectric resonator 1 remains unchanged.
第１図〜第３図の実施例はバイポーラ・トラン
ジスタの例であるが、他の高周波能動素子である
FET、ガン・ダイオード、インパツト・ダイオ
ードなどを用いても全く同様に本発明を実施する
ことができる。 The embodiments in Figures 1 to 3 are examples of bipolar transistors, but other high frequency active devices may also be used.
The present invention can be implemented in the same manner using FETs, Gunn diodes, impact diodes, and the like.
以上述べたように、本発明によれば誘電体共振
器の共振周波数に応じて、支持台の締付位置を変
更すればよいので、一つの規格で広い周波数範囲
にわたり発振周波数を変更することができる装置
が得られる。能動素子を含む必要な部品は一つの
基板に搭載されていて、その構造は固定的である
から、その温度条件その他の環境に対する条件は
広い周波数範囲にわたり均一になる。
As described above, according to the present invention, it is only necessary to change the tightening position of the support base according to the resonant frequency of the dielectric resonator, so it is possible to change the oscillation frequency over a wide frequency range with one standard. You can get a device that can. Since the necessary components including active elements are mounted on one substrate and the structure is fixed, the temperature conditions and other environmental conditions are uniform over a wide frequency range.
本発明の装置によれば、一つの規格で広い周波
数範囲の発振器が得られるので、量産効果により
装置を低価格化することができる。 According to the device of the present invention, since an oscillator with a wide frequency range can be obtained with one standard, the cost of the device can be reduced due to the mass production effect.
第１図は本発明実施例誘電体共振器制御発振器
の回路構成図。第２図は本発明実施例装置内部の
構造を示す平面図。第３図は第２図の―線部
の断面図。
１…誘電体共振器、２…線路、３…発振用トラ
ンジスタ、４…抵抗終端器、５…コンデンサ、６
…膜回路基板、７…出力結合ループ・アンテナ、
８…同軸接栓、９…発振器筐体、１０…周波数調
整金属ネジ、１１…支持台、１２…ネジ、１３…
ネジ用貫通穴、１４…発振器上ブタ、ｌ…線路２
上の誘電体共振器１との至近点から発振用トラン
ジスタ３までの線路長、l1，l2…ｌの可変余裕。
FIG. 1 is a circuit diagram of a dielectric resonator controlled oscillator according to an embodiment of the present invention. FIG. 2 is a plan view showing the internal structure of an apparatus according to an embodiment of the present invention. FIG. 3 is a sectional view taken along the line - in FIG. 2. 1... Dielectric resonator, 2... Line, 3... Oscillation transistor, 4... Resistance terminator, 5... Capacitor, 6
... membrane circuit board, 7... output coupling loop antenna,
8... Coaxial plug, 9... Oscillator housing, 10... Frequency adjustment metal screw, 11... Support stand, 12... Screw, 13...
Through hole for screw, 14... Oscillator top cover, l... Line 2
The line length from the closest point to the dielectric resonator 1 above to the oscillation transistor 3, the variable margin for l 1 , l 2 . . . l.
Claims (1)
用能動素子３と、この線路の他端に接続された終
端器４と、この線路に結合する誘電体共振器１と
が発振器筐体９の内部に実装され、この発振器筐
体に取付けられ前記誘電体共振器に対向しその誘
電体共振器との間隔を調節できる構造の周波数調
整金属ネジ１０とを備えた誘電体共振器制御発振
器において、 前記線路と、前記発振用能動素子と、前記終端
器とがひとつの支持台１１に固定的に配置され、 前記支持台の前記発振器筐体に対する取付け構
造は、前記誘電体共振器と前記線路の結合点から
前記発振用能動素子までの線路長を最適値に調節
するために前記支持台が前記線路長の方向に移動
可能な構造である ことを特徴とする誘電体共振器制御発振器。[Claims] 1. A line 2, an oscillating active element 3 connected to one end of this line, a terminator 4 connected to the other end of this line, and a dielectric resonator 1 coupled to this line. and a frequency adjusting metal screw 10 mounted on the oscillator housing and facing the dielectric resonator so as to be able to adjust the distance between the dielectric resonator and the dielectric resonator. In the body resonator controlled oscillator, the line, the active element for oscillation, and the terminator are fixedly arranged on one support 11, and the mounting structure of the support with respect to the oscillator housing is such that the dielectric A dielectric material characterized in that the support base is movable in the direction of the line length in order to adjust the line length from the coupling point of the body resonator and the line to the oscillation active element to an optimal value. Resonator controlled oscillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13487082A JPS5925406A (en) | 1982-08-02 | 1982-08-02 | Dielectric resonator control oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13487082A JPS5925406A (en) | 1982-08-02 | 1982-08-02 | Dielectric resonator control oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5925406A JPS5925406A (en) | 1984-02-09 |
| JPS6337522B2 true JPS6337522B2 (en) | 1988-07-26 |
Family
ID=15138394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13487082A Granted JPS5925406A (en) | 1982-08-02 | 1982-08-02 | Dielectric resonator control oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5925406A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4916337A (en) * | 1989-03-07 | 1990-04-10 | Integrated Device Technology, Inc. | TTL to CMOS logic level translator |
-
1982
- 1982-08-02 JP JP13487082A patent/JPS5925406A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5925406A (en) | 1984-02-09 |
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