JPS6335768A - Vapor deposition device - Google Patents
Vapor deposition deviceInfo
- Publication number
- JPS6335768A JPS6335768A JP17941986A JP17941986A JPS6335768A JP S6335768 A JPS6335768 A JP S6335768A JP 17941986 A JP17941986 A JP 17941986A JP 17941986 A JP17941986 A JP 17941986A JP S6335768 A JPS6335768 A JP S6335768A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- substrate
- vacuum chamber
- vapor
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000001771 vacuum deposition Methods 0.000 abstract 3
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、金属または金属酸化物等の無機物質、もしく
は有機物質等の薄膜を基板の表面に蒸着するための装置
に関し、特に、比較的大型の基板の部分薄着に適した蒸
着装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an apparatus for depositing a thin film of an inorganic substance such as a metal or a metal oxide, or an organic substance on the surface of a substrate. The present invention relates to a vapor deposition apparatus suitable for partial thin deposition of large substrates.
本発明は例えば、ガラスまたはセラミック基板上に金属
薄膜等によるマイクロ回路を形成し、あるいはＬＣＤに
おけるＴＰＴ（Ｉ膜トランジスタ）マトリクスを形成す
る場合等に利用される。The present invention is utilized, for example, when forming a microcircuit using a metal thin film or the like on a glass or ceramic substrate, or when forming a TPT (I film transistor) matrix in an LCD.
〈従来の装置〉
従来のこの種装置においては、第２図にその構成図を示
すように、被蒸着基板２１を、蒸発源２２を含む真空槽
２３内に収容して支持台３１で支持し、この真空槽２３
を、メインバルブ２４．ｔｌＨｌ（ｃポンプ２５．リー
クバルブ２６．三方バルブ２７゜ポンプリークバルブ２
８およびロータリポンプ２９等からなる真空排気系によ
って、所定の真空度、例えばｌＸｌ０″６〜Ｉ Ｘ １
０−’ｔｏｒｒに排気する。<Conventional Apparatus> In a conventional apparatus of this type, as shown in FIG. , this vacuum chamber 23
, main valve 24. tlHl (c pump 25. leak valve 26. three-way valve 27° pump leak valve 2
8 and a rotary pump 29, etc., a predetermined degree of vacuum is achieved, for example, lXl0''6 to Ix1.
Exhaust to 0-'torr.
なお、基板２１はその裏面に配設されたヒータ３０によ
って適宜に加熱される。Note that the substrate 21 is appropriately heated by a heater 30 provided on the back surface thereof.
〈発明が解決しようとする問題点〉
以上のような従来の蒸着装置によれば、被蒸着基板２１
の外形寸法が大きくなればそれに伴って真空槽２３を大
型化する必要がある。真空槽２３の大型化は、以下に列
挙するような種々の問題点発生の原因となる。<Problems to be Solved by the Invention> According to the conventional vapor deposition apparatus as described above, the deposition target substrate 21
As the external dimensions of the vacuum chamber 23 become larger, the vacuum chamber 23 needs to be enlarged accordingly. Increasing the size of the vacuum chamber 23 causes various problems as listed below.
■真空槽２３の大型化に伴って排気装置も大型化し、装
置全体が非常に大型となる。- As the vacuum chamber 23 becomes larger, the exhaust device also becomes larger, and the entire device becomes very large.
■蒸着時に必要とする真空度（Ｉ Ｘ １０−ｈ−１０
−’ｔｏｒｒ）に達する時間が長くなる。■Degree of vacuum required during vapor deposition (I x 10-h-10
-'torr) takes longer.
■電力、冷却水、液体窒素等を多量に必要とし、ランニ
ングコストが大となる。■Large amounts of electricity, cooling water, liquid nitrogen, etc. are required, resulting in high running costs.
■真空槽２３の大型化によりそのメインテナンスが複雑
化し、メインテナンスコストも大となる。- As the vacuum chamber 23 becomes larger, its maintenance becomes more complicated and the maintenance cost increases.
■装置全体の大型化により、設置時においてスペース、
重量の面で制約を受ける。■ Due to the larger size of the entire device, it takes up less space during installation.
Limited by weight.
本発明は上記に鑑みてなされたもので、真空槽を大型化
することなく、大きな基板に蒸着を施すことのできる蒸
着装置の提供を目的としている。The present invention has been made in view of the above, and an object of the present invention is to provide a vapor deposition apparatus that can perform vapor deposition on a large substrate without increasing the size of a vacuum chamber.
〈問題点を解決するための手段〉
上記の目的を達成するための構成を、実施例図面である
第１図を参照しつつ説明すると、本発明は、蒸発源２を
収容し、蒸着すべき基板１の表面１ａを内方に向けた状
態でこの基板１の一部で外壁の一部を構成してなる第１
の真空槽３と、この外壁を構成する基板１の一部を共通
の外壁とし、この外壁を挟んで第１の真空槽３と反対側
に設けられた第２の真空槽４を備える。そして、第２の
真空槽４を、第１の真空槽３の真空度に対して所定差以
内の真空度に保持し得るよう構成する。<Means for Solving the Problems> A configuration for achieving the above object will be described with reference to FIG. 1, which is an embodiment drawing. With the surface 1a of the substrate 1 facing inward, the first
A vacuum chamber 3 and a second vacuum chamber 4 having a common outer wall formed by a part of the substrate 1 constituting the outer wall and provided on the opposite side from the first vacuum chamber 3 with the outer wall in between. The second vacuum chamber 4 is configured to maintain a degree of vacuum within a predetermined difference with respect to the degree of vacuum of the first vacuum chamber 3.
〈作用〉
蒸着すべき基板１全体を真空槽内に収容する必要がなく
、真空槽を大型化することなく外形寸法の大きい基板１
に部分蒸着を施すことができる。<Function> It is not necessary to house the entire substrate 1 to be vapor-deposited in a vacuum chamber, and the substrate 1 with large external dimensions can be deposited without enlarging the vacuum chamber.
can be subjected to partial deposition.
ここで、第１の真空槽の外壁の一部を基板１の一部で構
成しているがこの部分は同時に第２の真空槽４の外壁を
も構成しており、この第２の真空槽４の真空度を、第１
の真空槽３の真空度に対して所定差以内に保持すること
により、基板１に作用する差圧は所定量以内に保つこと
ができ、基板ｌの強度上の問題はない。Here, a part of the outer wall of the first vacuum chamber is constituted by a part of the substrate 1, but this part also constitutes the outer wall of the second vacuum chamber 4, and this second vacuum chamber 4 degree of vacuum, the first
By maintaining the degree of vacuum of the vacuum chamber 3 within a predetermined difference, the differential pressure acting on the substrate 1 can be maintained within a predetermined amount, and there is no problem with the strength of the substrate 1.
〈実施例〉 本発明の実施例を、以下、図面に基づいて説明する。<Example> Embodiments of the present invention will be described below based on the drawings.
第１図は本発明実施例の要部縦断面図と真空排気装置の
排気回路図とを併記して示す図である。FIG. 1 is a diagram showing both a longitudinal sectional view of a main part of an embodiment of the present invention and an exhaust circuit diagram of an evacuation device.
蒸着を施すべき基板１は、第１の真空槽３と第２の真空
槽４との間に挿入され、基板１の一部がこれら両頁空槽
３．４を仕切る共通の外壁（隔壁）を構成している。す
なわち、基台６上に、第１の真空槽３を形成する、上面
が開口した壁体が固着され、この開口上面に基板１が載
せられる。この基板１の上方には、第２の真′空槽４を
形成する、底面が開口した壁体が載せられている。基板
１と各壁体との間には、各真空槽３．４の気密性を保持
するためのバッキング３ａ、４ａが介挿されている。こ
のバッキング３ａ、４ａの材質としては、シリコンゴム
、ニトリルゴムあるいはブタジェンゴム等の合成ゴムが
用いられる。基板１の真空槽外方の一端部は、支持台７
によって支承されている。A substrate 1 to be subjected to vapor deposition is inserted between a first vacuum chamber 3 and a second vacuum chamber 4, and a part of the substrate 1 forms a common outer wall (partition wall) that partitions both empty chambers 3.4. It consists of That is, a wall with an open top surface forming the first vacuum chamber 3 is fixed onto the base 6, and the substrate 1 is placed on the top surface of the opening. Above this substrate 1, a wall body with an open bottom and forming a second vacuum chamber 4 is placed. Backings 3a and 4a are inserted between the substrate 1 and each wall to maintain airtightness of each vacuum chamber 3.4. As the material for the backings 3a, 4a, synthetic rubber such as silicone rubber, nitrile rubber, or butadiene rubber is used. One end of the substrate 1 on the outside of the vacuum chamber is connected to a support base 7.
is supported by.
第１の真空槽３内には蒸発源２が収容されており、基板
１はその蒸着を施すべき面、すなわち表面１ａが第１の
真空槽３側に向けられる。この蒸発ｔＡ２には、１着材
料を加熱するための電子ビーム加熱装置もしくはヒータ
加熱装置が用いられる。An evaporation source 2 is housed in the first vacuum chamber 3, and the surface of the substrate 1 to be subjected to vapor deposition, that is, the surface 1a, is directed toward the first vacuum chamber 3. For this evaporation tA2, an electron beam heating device or a heater heating device for heating the first material is used.
また、第２の真空槽４内には、基板１を加熱するための
ヒータ５が収容されている。Furthermore, a heater 5 for heating the substrate 1 is housed in the second vacuum chamber 4 .
第１の真空槽３は、拡散ポンプ１１．ロークリポンプ１
２．メインバルブ１３．三方バルブ１４゜ポンプリーク
バルブ１５およびリークバルブ１６を備えてなる真空排
気装置に接続されており、第１の真空系を構成している
。The first vacuum chamber 3 includes a diffusion pump 11. Rokuri pump 1
2. Main valve 13. The three-way valve 14 is connected to a vacuum evacuation device comprising a pump leak valve 15 and a leak valve 16, forming a first vacuum system.
第２の真空槽４は、この第１の真空系に対して圧力調整
バルブ１７を介して接続されるとともに、第１の真空系
のリークバルブ１６と連動するリークバルブ１８が設け
られ、第２の真空系を構成している。圧力調整バルブ１
７は、第２の真空系の真空度が、第１の真空系の真空度
からあらかじめ設定された量だけ異る値に保持されるよ
う、自動的に作動する。The second vacuum chamber 4 is connected to the first vacuum system via a pressure adjustment valve 17, and is provided with a leak valve 18 that operates in conjunction with the leak valve 16 of the first vacuum system. It constitutes the vacuum system of Pressure adjustment valve 1
7 is automatically operated so that the degree of vacuum of the second vacuum system is maintained at a value that differs from the degree of vacuum of the first vacuum system by a preset amount.
次に作用を述べる。まず、蒸発源２に蒸着材料を装着し
、蒸着すべき基板１を第１図に示すように第１および第
２の真空槽３および４間に挿入する。次に、ロークリポ
ンプ１２を駆動するとともに、三方バルブ１４を操作し
て第１の真空系内を荒引きする。このとき、圧力調整バ
ルブ１７の作動により、第２の真空系内も第１の真空系
に対して一定の差圧を保持するよう排気が開始される。Next, we will discuss the effect. First, the evaporation source 2 is loaded with evaporation material, and the substrate 1 to be evaporated is inserted between the first and second vacuum chambers 3 and 4 as shown in FIG. Next, while driving the vacuum pump 12, the three-way valve 14 is operated to roughly pump the inside of the first vacuum system. At this time, by operating the pressure regulating valve 17, evacuation is started in the second vacuum system so as to maintain a constant differential pressure with respect to the first vacuum system.
その後、三方バルブ１４および、メインバルブ１３を操
作して、拡散ポンプ１１による粗引きを行うが、蒸着に
適した所定の真空度に達するまで、第１および第２の真
空系は一定の圧力差以内に保持する。蒸着終了後、第１
および第２の真空系のリークを行って常圧に戻すが、こ
の場合においても、リークバルブ１６と１８の連動およ
び圧力調整バルブ１７の作用により、第１および第２の
真空系は一定の圧力差以内に保持されることになる。Thereafter, the three-way valve 14 and the main valve 13 are operated to perform rough evacuation using the diffusion pump 11, but the first and second vacuum systems maintain a constant pressure difference until a predetermined degree of vacuum suitable for vapor deposition is reached. Keep within. After the completion of vapor deposition, the first
Then, the second vacuum system is leaked to return it to normal pressure, but even in this case, the first and second vacuum systems are maintained at a constant pressure due to the interlocking of the leak valves 16 and 18 and the action of the pressure adjustment valve 17. It will be held within the difference.
以上の結果、第１および第２の真空槽３および４の圧力
は、常に一定の圧力差以内に制御されることになり、両
頁空槽３，４間に共通の外壁として挿入される基板１に
は、この圧力差に応じた所定の力のみが作用することに
なり、高真空度にしても基板１の破損等の虞れはない。As a result of the above, the pressures of the first and second vacuum chambers 3 and 4 are always controlled within a certain pressure difference, and the substrate inserted as a common outer wall between both the page empty chambers 3 and 4 Only a predetermined force corresponding to this pressure difference acts on the substrate 1, and there is no risk of damage to the substrate 1 even at a high degree of vacuum.
なお、第１および第２の真空槽３および４の圧力差は、
略１０４ｔｏｒｒ程度以内であれば基板１が損傷しない
ことが確かめられた。従って本発明においては、上述し
たように圧力調整バルブ１７で第１および第２の真空槽
３および４を接続する以外に、両頁空槽を個別に真空引
きし、その際、両頁空槽の圧力差を所定範囲、例えば±
１０−’ｔｏｒｒ以内に保持するよう構成することによ
っても、実施可能である。Note that the pressure difference between the first and second vacuum chambers 3 and 4 is
It was confirmed that the substrate 1 would not be damaged if the pressure was within about 104 torr. Therefore, in the present invention, in addition to connecting the first and second vacuum tanks 3 and 4 with the pressure regulating valve 17 as described above, both empty page tanks are evacuated individually, and at that time, both empty page tanks are pressure difference within a predetermined range, e.g. ±
It can also be implemented by configuring to maintain it within 10-'torr.
〈発明の効果〉
以上説明したように、本発明によれば、蒸着を行う第１
の真空槽の外壁の一部を被蒸着基板の一部で構成すると
ともに、この基板を挟んで第２の真空槽を設け、第２の
真空槽の真空度を第１の真空槽の真空度に対して所定の
差以内に保持し得るよう構成したので、基板を破損する
ことなく第１の真空槽を蒸着に適した真空度にまで排気
することができる。これにより、基板全体を真空槽内に
収容することなく基板への部分蒸着が可能となる。<Effects of the Invention> As explained above, according to the present invention, the first
A part of the outer wall of the vacuum chamber is made up of a part of the substrate to be evaporated, and a second vacuum chamber is provided with this substrate in between, and the degree of vacuum in the second vacuum chamber is the same as the degree of vacuum in the first vacuum chamber. Since the first vacuum chamber is configured to be maintained within a predetermined difference between the two, the first vacuum chamber can be evacuated to a degree of vacuum suitable for vapor deposition without damaging the substrate. This allows partial vapor deposition onto the substrate without housing the entire substrate in a vacuum chamber.
その結果、真空槽ばかりでなく排気装置も小型化され、
装置全体をコンパクト化することができ、メインテナン
スの簡略化、取扱いの簡素化、ランニングコストの低減
化等を達成するとともに、設置時におけるスペース、重
量等の制約が緩和される。更に、真空槽の小型化により
、真空到達時間が短縮化されることになる。As a result, not only the vacuum chamber but also the exhaust equipment has become smaller.
The entire device can be made compact, simplifying maintenance, simplifying handling, and reducing running costs, while also easing restrictions on space, weight, etc. during installation. Furthermore, by downsizing the vacuum chamber, the time required to reach a vacuum will be shortened.
第１図は本発明実施例の構成を示す図で、要部縦断面図
と真空排気装置の排気回路を併記して示す図、
第２図は従来の蒸着装置の構成図である。
１一基板 ２・・−蒸発源３・・−第
１の真空槽 ４−第２の真空槽５−ヒータ
１１−拡散ボンプ１２−・−ロークリポンプ
１３・−・メインバルブ１４−三方バルブ
１６．１８・・−リークバルブ
１７−・圧力調整バルブ
特許出願人 シャープ株式会社
代 理 人 弁理士 西１）新
築１図
１４ コ２FIG. 1 is a diagram showing the configuration of an embodiment of the present invention, and is a longitudinal sectional view of a main part and an exhaust circuit of a vacuum exhaust device, and FIG. 2 is a configuration diagram of a conventional vapor deposition device. 1 - Substrate 2... - Evaporation source 3... - First vacuum chamber 4 - Second vacuum chamber 5 - Heater
11-Diffusion pump 12--Low leak pump 13--Main valve 14-Three-way valve 16.18--Leak valve 17--Pressure adjustment valve Patent applicant Sharp Corporation Representative Patent attorney Nishi 1) New construction 1 drawing 14 Ko2
Claims (1)
って、蒸発源を収容し、蒸着すべき基板の表面を内方に
向けた状態で当該基板の一部で外壁の一部を構成してな
る第１の真空槽と、上記外壁を構成する基板の一部を共
通の外壁とし、この外壁を挟んで上記第１の真空槽と反
対側に設けられた第２の真空槽を有し、その第２の真空
槽を、上記第１の真空槽の真空度に対して所定差以内の
真空度に保持し得るよう構成したことを特徴とする蒸着
装置。An apparatus for depositing a thin film of a predetermined substance on the surface of a substrate, which houses an evaporation source and forms part of the outer wall with a part of the substrate with the surface of the substrate to be deposited facing inward. and a second vacuum chamber, which has a common outer wall including a part of the substrate constituting the outer wall, and is provided on the opposite side of the first vacuum chamber with the outer wall in between. A vapor deposition apparatus, characterized in that the second vacuum chamber is configured to maintain a degree of vacuum within a predetermined difference from the degree of vacuum of the first vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17941986A JPS6335768A (en) | 1986-07-30 | 1986-07-30 | Vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17941986A JPS6335768A (en) | 1986-07-30 | 1986-07-30 | Vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6335768A true JPS6335768A (en) | 1988-02-16 |
Family
ID=16065537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17941986A Pending JPS6335768A (en) | 1986-07-30 | 1986-07-30 | Vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6335768A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536895A (en) * | 2018-11-13 | 2019-03-29 | 宝鸡文理学院 | A kind of substrate strong adaptability nano material homogeneous film formation method and device thereof |
| PL424592A1 (en) * | 2018-02-14 | 2019-08-26 | Politechnika Łódzka | Method for supplying with vapours of the precursor of reactors intended for applying coatings by vacuum methods and the system for supplying with vapours of the precursor of reactors intended for applying coatings by vacuum methods |
-
1986
- 1986-07-30 JP JP17941986A patent/JPS6335768A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL424592A1 (en) * | 2018-02-14 | 2019-08-26 | Politechnika Łódzka | Method for supplying with vapours of the precursor of reactors intended for applying coatings by vacuum methods and the system for supplying with vapours of the precursor of reactors intended for applying coatings by vacuum methods |
| CN109536895A (en) * | 2018-11-13 | 2019-03-29 | 宝鸡文理学院 | A kind of substrate strong adaptability nano material homogeneous film formation method and device thereof |
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