JPS6332841A - Deflecting device and its manufacture - Google Patents
Deflecting device and its manufactureInfo
- Publication number
- JPS6332841A JPS6332841A JP61175580A JP17558086A JPS6332841A JP S6332841 A JPS6332841 A JP S6332841A JP 61175580 A JP61175580 A JP 61175580A JP 17558086 A JP17558086 A JP 17558086A JP S6332841 A JPS6332841 A JP S6332841A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- ceramic layer
- core
- temperature
- deflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 2
- 239000000919 ceramic Substances 0.000 abstract description 20
- -1 polypropylene Polymers 0.000 abstract description 15
- 239000004743 Polypropylene Substances 0.000 abstract description 7
- 229920001155 polypropylene Polymers 0.000 abstract description 7
- 229920003002 synthetic resin Polymers 0.000 abstract description 3
- 239000000057 synthetic resin Substances 0.000 abstract description 3
- 230000020169 heat generation Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 230000001629 suppression Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 14
- 239000000725 suspension Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は陰極線管に係り、特にその偏向装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a cathode ray tube, and more particularly to a deflection device thereof.
（従来の技術）
一般に陰極線管、例えばカラー受像管の水平偏向周波数
は１５．７５ＫＨｚであるが、高解像度性及び視認性の
高度化が要求されるデイスプレィ管等では、２５ＫＨｚ
及び３１ＫＨｚ等からなり水平偏向周波数の高い゛使用
条件が増えている。特にコンピューターにＪ：る技術設
計或いは生産制御いわゆるＣＡＤ（ＣｏｍｐｕｔｅｒＡ
ｉｄｅｄ Ｄｅｓｉｇｎ）及びＣＡＭ （Ｃｏａ＋ｐｕ
ｔｅｒ Ａｉｄｅｄ Ｍａｍｕｆ−ａｃｔｕｒｉｎｇ）
用途に用いられるデイスプレィ管では６４にＨｚの水平
偏向周波数で動作することもある。(Prior Art) Generally, the horizontal deflection frequency of cathode ray tubes, such as color picture tubes, is 15.75 KHz, but in display tubes, etc., which require high resolution and high visibility, the horizontal deflection frequency is 25 KHz.
and 31 KHz, etc., and usage conditions with high horizontal deflection frequencies are increasing. In particular, computer-based technical design or production control, so-called CAD (Computer A)
Design) and CAM (Coa+pu
ter Aided Mamuf-acturing)
Display tubes used in applications may operate at horizontal deflection frequencies of up to 64 Hz.
（発明が解決しようとする問題点）
前述したような高い水平偏向周波数で前記偏向装置を動
作させた場合、次のような問題点を生ずる。(Problems to be Solved by the Invention) When the deflection device is operated at a high horizontal deflection frequency as described above, the following problems occur.
すなわち、水平磁界により、前記偏向装置を構成するコ
ア及び水平偏向コイルに渦電流が発生し発熱することで
ある。That is, the horizontal magnetic field generates eddy currents in the core and the horizontal deflection coil that constitute the deflection device, causing heat generation.
例えば、１４吋９０°偏向型デイスプレイ管用の前記偏
向装置を従来の水平偏向周波数で動作させた場合の水平
偏向コイルおよびコアの温度上昇６丁は路間−で第３図
に示すように約２０℃である。しかし、６４ＫＨｚで動
作させた場合、前記６丁は約７０℃となる。ところで、
水平コイルとコアの間の介在するモールドは安価なポリ
プロピレン製であり、その耐熱温度（熱変形が生じると
云われている温度）は約１０５℃である。そこで、外気
温度が５０℃の場所で、１４吋９０°偏向型デイスプレ
イ管用偏向装置を水平側周波数を６４Ｋｌ（ｚで動作さ
せると、第３図に示す如く水平偏向コイルおよびコアが
約７０℃も上昇するため、その近傍すなわちモールドの
温度は１２０° 近くとなる。そのためポリプロピレン
製モールドが熱変形し、特性上及び信頼性上重大な問題
となる。勿論、更に耐熱性の高い材料を用いれば解決可
能であるが、材料コストや加工精度（技術）が大幅に高
くなり、甚だ量産性に乏しいものとなる。For example, when the deflection device for a 14-inch, 90-degree deflection type display tube is operated at a conventional horizontal deflection frequency, the temperature rise of the horizontal deflection coil and core is approximately 20% as shown in FIG. It is ℃. However, when operated at 64 KHz, the temperature of the six guns is approximately 70°C. by the way,
The mold interposed between the horizontal coil and the core is made of inexpensive polypropylene, and its heat resistance temperature (the temperature at which thermal deformation is said to occur) is approximately 105°C. Therefore, when operating a 14-inch 90° deflection type display tube deflector at a horizontal frequency of 64 Kl (z) in a place where the outside temperature is 50°C, the horizontal deflection coil and core will heat up to about 70°C as shown in Figure 3. As a result, the temperature in the vicinity of the mold, that is, the temperature in the mold, approaches 120°.As a result, the polypropylene mold is thermally deformed, causing serious problems in terms of characteristics and reliability.Of course, this can be solved by using a more heat-resistant material. Although it is possible, the material cost and processing precision (technique) will be significantly higher, making it extremely difficult to mass produce.
本発明は前述したカラー受像管用偏向装置の欠点に鑑み
なされたもので、高い水平偏向周波数による動作におい
ても発熱が少なく安定した偏向装置及びその製造方法を
提供することを目的とする。The present invention was made in view of the above-mentioned drawbacks of the deflection device for a color picture tube, and it is an object of the present invention to provide a stable deflection device that generates little heat even when operated at a high horizontal deflection frequency, and a method for manufacturing the same.
（問題点を解決するための手段）
本発明は、偏向装置を構成するモールドの表面にモール
ドよりも熱輻射率の大きい被膜を有するものである。(Means for Solving the Problems) According to the present invention, the surface of the mold constituting the deflection device has a coating having a higher thermal emissivity than the mold.
（作 用）
モールドの表面に形成された被膜は、比表面積がモール
ドのおよそ５０倍もあり熱放射性が良いため、モールド
の温度上昇を抑制する。(Function) The coating formed on the surface of the mold has a specific surface area approximately 50 times that of the mold and has good heat radiation, so it suppresses the rise in temperature of the mold.
（実施例）
以下、本発明の一実施例につき図面を用いて詳細に説明
する。すなわち、第１図はカラー受像管用の偏向装置■
の一部断面を有する側面図であり、内側に水偏向コイル
■を備えた合成樹脂製例えばポリプロピレンの円錐形状
のモールド■と、トロイダル形状のコア（イ）と、この
コアに巻回された垂直偏向コイル■とから少なくとも構
成される。(Example) Hereinafter, one example of the present invention will be described in detail using the drawings. In other words, Figure 1 shows the deflection device for color picture tubes.
It is a side view with a partial cross section of a conical mold made of synthetic resin, for example, polypropylene, equipped with a water deflection coil inside ■, a toroidal-shaped core (A), and a vertical mold wound around this core. It is composed of at least a deflection coil (■).
第１図のモールド■はポリプロピレンよりなり、そのモ
ールドの表面に、セラミック層（へ）が形成されている
。このセラミック層（Ｑは、下記実施例のような、フィ
ラーとしてジルコン（ＺｒＳｉＯ，）を含んだケイ素と
、ジルコニアのアルコキシド化合物、例えばＺｒＳｉ
（ＯＣ４Ｈｓ ） ４の懸濁液をスプレー法で塗布し、
厚さが約１０μ園の被膜を形成した後、加熱処理したも
のである。The mold (2) in FIG. 1 is made of polypropylene, and a ceramic layer is formed on the surface of the mold. This ceramic layer (Q is an alkoxide compound of silicon and zirconia, such as ZrSiO, containing zircon (ZrSiO,) as a filler, as shown in the following example.
(OC4Hs) Apply a suspension of 4 by spray method,
After forming a film with a thickness of approximately 10 μm, heat treatment was performed.
実施例
ジルコン ５００ ｇｒイソプ
ロピルアルコール ４００ ｇｒこのａ濁液の塗
布方法はスプレー法が好適であり、この場合、２０１乃
至３０ｃｎの距離からスプレー圧約３ｋｇ／ｄで塗布す
ると、前記実施例のような約１０ｐの膜は約３秒で形成
させることができる。このように、ケイ素とジルコニア
のアルコキシド化合物を含む懸濁液を塗布したモールド
を７０℃以上で熱変形をおこさない温度の雰囲気中で加
熱することにより、第１図に示すようなセラミックＭ■
を得ることができる。このモールド■に塗布されたケイ
素とジルコニアのアルキシド化合物は、７０℃以上の雰
囲気中で大気中の水分により加水分解を起こし、その結
果、アルコキシド同志の重縮合反応により造膜し、ケイ
素とジルコニアを含む金属酸化物すなわちセラミック層
となる。なお、上述の例では懸濁液を塗布後加熱したが
、製造時間短縮のために７０℃以上で加熱しながら懸濁
液を塗布すれば後の加熱処理工程を省略することができ
る。Example Zircon 500 gr Isopropyl alcohol 400 gr The preferred method for applying this a suspension is the spray method. In this case, when applied from a distance of 201 to 30 cm at a spray pressure of approximately 3 kg/d, approximately 10 p as in the above example is applied. The film can be formed in about 3 seconds. In this way, by heating a mold coated with a suspension containing an alkoxide compound of silicon and zirconia in an atmosphere at a temperature of 70°C or higher that does not cause thermal deformation, a ceramic M
can be obtained. The alkoxide compound of silicon and zirconia applied to this mold (■) undergoes hydrolysis due to atmospheric moisture in an atmosphere of 70°C or higher, and as a result, a film is formed by a polycondensation reaction between the alkoxides, and silicon and zirconia are formed. It becomes a metal oxide containing ceramic layer. In the above example, the suspension was heated after being applied, but in order to shorten the manufacturing time, the subsequent heat treatment step can be omitted if the suspension is applied while being heated at 70° C. or higher.
また、このケイ素とジルコニアのアルコキシド化合物は
、赤外線領域の電磁線の吸収特性がよいため、加水分解
をさせる場合、７０℃以上の雰囲気中ではなく、ケイ素
とジルコニアのアルコキシド化合物が塗布されるモール
ド■の表面を例えば、赤外線により照射しながらケイ素
とジルコニアｂアルコキシド化合物を含むＷ！４濁液を
塗布した後、常温においても充分加水分解が行なわれる
ことも確認できた。さらに塗布後、赤外線を照射するこ
とも可能である。In addition, this alkoxide compound of silicon and zirconia has good absorption characteristics for electromagnetic radiation in the infrared region, so when hydrolyzing it, it is not done in an atmosphere of 70°C or higher, but in a mold where the alkoxide compound of silicon and zirconia is applied. For example, W! containing silicon and zirconia b alkoxide compounds while irradiating the surface with infrared rays! It was also confirmed that after applying the 4 suspension, sufficient hydrolysis occurred even at room temperature. Furthermore, it is also possible to irradiate with infrared rays after coating.
ここで、本発明者等は、・本発明を適用した偏向装置に
より１４吋９０°偏向型デイスプレイ管を動作させた場
合の前記モールドの温度上昇を詳しく実験検討した。Here, the present inventors conducted a detailed experimental study on the temperature rise of the mold when a 14-inch 90° deflection type display tube was operated using a deflection device to which the present invention is applied.
第２図は、その結果を示すもので、横軸はケイ素とジル
コニウムの金属酸化物を含むセラミック層０の厚さを示
し、縦軸は前記モールド■の動作時の温度上昇をセラミ
ック層を形成しない場合を基準として、相対値で示して
いる。この図より、前記モールドの表面にセラミック層
を形成することにより、モールドの温度上昇が抑制され
ることが判明した。これは、モールドの表面に形成され
たセラミック層の比表面積が、モールドの比表面積の約
５０倍もあり、言い換えれば、セラミック層の表面積が
モールドの表面積の約５０倍となったため熱放散性が大
幅に向上したためである。尚、前記比表面積の測定は、
低圧での窒素ガスの吸着量より算出するＢＥＴ法により
行なった。Figure 2 shows the results, where the horizontal axis shows the thickness of the ceramic layer 0 containing metal oxides of silicon and zirconium, and the vertical axis shows the temperature rise during operation of the mold 2 forming the ceramic layer. Relative values are shown based on the case where no From this figure, it was found that by forming a ceramic layer on the surface of the mold, the rise in temperature of the mold was suppressed. This is because the specific surface area of the ceramic layer formed on the surface of the mold is about 50 times the specific surface area of the mold.In other words, the surface area of the ceramic layer is about 50 times the surface area of the mold, so the heat dissipation property is improved. This is due to a significant improvement. In addition, the measurement of the specific surface area is as follows:
This was carried out using the BET method, which is calculated from the amount of nitrogen gas adsorbed at low pressure.
一方、第２図においてセラミック層の厚さがおよそ１０
ｕＭ以上となると、温度抑制効果が飽和するが、これは
、セラミック層の厚さが厚くなるとモールド表面に近い
セラミック層、言い換えればセラミック層の下層におい
てはあまり熱放散性の向上には寄与せず、セラミック層
の表層領域のみが熱放散性に大きく寄与するためと考え
られる。尚、本発明の実施例のようなセラミックは、電
気絶縁性が高く、且つ非磁性体であるため偏向装置の本
来の磁気的作用についてはなんら影響を与えないことは
明らかである。さらに、ケイ素とジルコニウムの金属酸
化物を含むセラミック層は、７０°以上にて焼結可能な
ため、耐熱ａ度が１０５℃と比較的低いモールド表面に
焼結させるには好適であり、この点においても工業的量
産性に富んだものと云える。On the other hand, in Figure 2, the thickness of the ceramic layer is approximately 10
When the temperature exceeds uM, the temperature suppression effect is saturated, but this is because as the thickness of the ceramic layer increases, the ceramic layer near the mold surface, in other words, the lower layer of the ceramic layer does not contribute much to improving heat dissipation. This is thought to be because only the surface layer region of the ceramic layer greatly contributes to heat dissipation. Incidentally, since ceramics such as those used in the embodiments of the present invention have high electrical insulation properties and are non-magnetic, it is clear that they do not have any effect on the original magnetic action of the deflection device. Furthermore, since the ceramic layer containing metal oxides of silicon and zirconium can be sintered at a temperature of 70° or higher, it is suitable for sintering on a mold surface with a relatively low heat resistance of 105°C. It can also be said that it is highly suitable for industrial mass production.
尚、一般に、ポリプロピレンのような合成樹脂は、表面
が光沢をおびている。すなわち、表面が非常に平滑であ
るためセラミック層を形成、付着させるには不都合であ
る。Note that synthetic resins such as polypropylene generally have glossy surfaces. That is, since the surface is very smooth, it is inconvenient for forming and attaching a ceramic layer.
本発明者等は、この点も充分研究した結果、例えば、１
１００以上の紙ヤリスでモールドの表面を粗くしておく
と、実用上問題ない付着力が得られることも確認した。As a result of thorough research on this point, the inventors found that, for example, 1
It was also confirmed that by roughening the surface of the mold with a paper sanding of 100 or more, it was possible to obtain adhesion strength that was acceptable for practical use.
以上のように、本発明によれば高い水平偏向周波数にお
いて水平コイルやコアが発熱してもモールドの昇温を抑
制して信頼性の高い偏向装置を得ることができる。As described above, according to the present invention, even if the horizontal coil or core generates heat at a high horizontal deflection frequency, the rise in temperature of the mold can be suppressed and a highly reliable deflection device can be obtained.
度上昇を示す特性図、第３図は従来の偏向装置に取り付
けられた水平コイル及びコアの動作中の温度上昇を示す
特性図である。FIG. 3 is a characteristic diagram showing the temperature rise during operation of a horizontal coil and core attached to a conventional deflection device.
■・・・偏向装置 ■・・・水平偏向コイル■
・・・モールド （至）・・・コア■・・・垂
直偏向コイル ０・・・セラミック層代理人 弁理士
則 近 憲 佑
同 大胡典夫
第１図■・・・Deflection device ■・・・Horizontal deflection coil■
...Mold (to)...Core■...Vertical deflection coil 0...Ceramic layer Agent Patent attorney Nori Ken Chika Yudo Norio Ogo Figure 1
Claims (1)
状のモールドを備えた偏向装置において、前記モールド
の表面に、このモールドより熱輻射率が大きい被膜を有
することを特徴とする偏向装置。 ２）前記被膜がケイ素とジルコニウムの金属酸化物を含
むことを特徴とする特許請求の範囲第１項記載の偏向装
置。 ３）水平偏向コイルと垂直偏向コイルとの間に円錐形状
のモールドを備えた偏向装置の製造方法において、前記
モールドの表面をエッチングする工程と、前記モールド
より熱輻射率が大きい被膜を形成する工程とを備えたこ
とを特徴とする偏向装置の製造方法。 ４）前記エッチング工程が、紙ヤリスを用いることを特
徴とする特許請求の範囲第３項記載の偏向装置の製造方
法。[Claims] 1) In a deflection device including a conical mold between a horizontal deflection coil and a vertical deflection coil, the surface of the mold is provided with a coating having a higher thermal emissivity than that of the mold. Features a deflection device. 2) The deflection device according to claim 1, wherein the coating contains metal oxides of silicon and zirconium. 3) A method for manufacturing a deflection device including a conical mold between a horizontal deflection coil and a vertical deflection coil, including a step of etching the surface of the mold, and a step of forming a coating having a higher thermal emissivity than the mold. A method for manufacturing a deflection device, comprising: 4) The method for manufacturing a deflection device according to claim 3, wherein the etching step uses a paper file.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61175580A JPH0828193B2 (en) | 1986-07-28 | 1986-07-28 | Deflection device and manufacturing method thereof |
| EP87302144A EP0238261B1 (en) | 1986-03-19 | 1987-03-12 | Deflection device for a cathode ray tube |
| DE8787302144T DE3767330D1 (en) | 1986-03-19 | 1987-03-12 | DEFLECTION DEVICE FOR A CATHODE RAY TUBE. |
| US07/026,215 US4749975A (en) | 1986-03-19 | 1987-03-16 | Cathode ray tube deflection device having heat dissipation means |
| CN87102134.XA CN1004241B (en) | 1986-03-19 | 1987-03-18 | Deflecting arrangement for cathode-ray tube |
| KR1019870002507A KR900006170B1 (en) | 1986-03-19 | 1987-03-19 | Deflection yoke of cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61175580A JPH0828193B2 (en) | 1986-07-28 | 1986-07-28 | Deflection device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6332841A true JPS6332841A (en) | 1988-02-12 |
| JPH0828193B2 JPH0828193B2 (en) | 1996-03-21 |
Family
ID=15998567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61175580A Expired - Lifetime JPH0828193B2 (en) | 1986-03-19 | 1986-07-28 | Deflection device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828193B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218257U (en) * | 1988-07-19 | 1990-02-06 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4975260A (en) * | 1972-11-24 | 1974-07-19 | ||
| JPS58220343A (en) * | 1982-06-15 | 1983-12-21 | Matsushita Electric Ind Co Ltd | Cathode-ray tube apparatus |
| JPS61126746A (en) * | 1984-11-21 | 1986-06-14 | Mitsubishi Electric Corp | Picture tube |
-
1986
- 1986-07-28 JP JP61175580A patent/JPH0828193B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4975260A (en) * | 1972-11-24 | 1974-07-19 | ||
| JPS58220343A (en) * | 1982-06-15 | 1983-12-21 | Matsushita Electric Ind Co Ltd | Cathode-ray tube apparatus |
| JPS61126746A (en) * | 1984-11-21 | 1986-06-14 | Mitsubishi Electric Corp | Picture tube |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218257U (en) * | 1988-07-19 | 1990-02-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0828193B2 (en) | 1996-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |