JPS63316000A - Plasma x-ray source - Google Patents
Plasma x-ray sourceInfo
- Publication number
- JPS63316000A JPS63316000A JP62151186A JP15118687A JPS63316000A JP S63316000 A JPS63316000 A JP S63316000A JP 62151186 A JP62151186 A JP 62151186A JP 15118687 A JP15118687 A JP 15118687A JP S63316000 A JPS63316000 A JP S63316000A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- plasma
- ray source
- conductive plates
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 53
- 239000003985 ceramic capacitor Substances 0.000 claims description 16
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 230000003014 reinforcing effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はプラズマX線源に係り、特にI、S IfR造
用リソグラフィ製造用として用いるのに好適なプラズマ
X線源に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma X-ray source, and particularly to a plasma X-ray source suitable for use in lithography production for I, S IfR production.
最近、LSI製造用光源として高集積化が可能なX線源
が有望視され、特にプラズマX線源は、安価で、かつ、
高輝度X線が得られることがら研究開発が進められてお
り、例えば、特開昭60−151945号公報がある。Recently, X-ray sources that can be highly integrated have been viewed as promising light sources for LSI manufacturing, and plasma X-ray sources in particular are inexpensive and
Research and development is progressing because high-intensity X-rays can be obtained, and for example, there is Japanese Patent Application Laid-Open No. 151945/1983.
しかし、まだ輝度不足や輝度ばらつきがあり、これらを
考慮して放電繰り返し数を増す方法で対処している。こ
の場合、電源も含めたX線源の寿命が問題になる。従来
の電源に用いる油浸コンデンサの充放電の縁り返し限度
は、106回程度であり、この場合、寿命は数ケ月程度
である。However, there are still insufficient brightness and brightness variations, and the solution is to take these into consideration by increasing the number of discharge repetitions. In this case, the lifespan of the X-ray source including the power supply becomes a problem. The limit for charging and discharging of oil-immersed capacitors used in conventional power sources is about 106 times, and in this case, the lifespan is about several months.
プラズマX線源用電源は、通常KJの放電エネルギーが
必要とされており、従来より大容量化が容易な油浸コン
デンサが使用されている。しかし、コンデンサの寿命が
短かいという問題があり、放電頻度が103〜1011
回必要とされるエキシマレーザ等の電源には長寿命が期
待できるセラミックコンデンサが使用される現状にある
。セラミックコンデンサは、その製造工程上大容量化が
困難であり、プラズマX線源等の大容量電源に適用する
と、寸法、形状及び重量が大きくなり、スーパークリー
ンルーム内に配置される露光用電源に適用できないとい
う問題があった。A power source for a plasma X-ray source normally requires a discharge energy of KJ, and oil-immersed capacitors, which can easily increase the capacity, have been used in the past. However, there is a problem that the life of the capacitor is short, and the discharge frequency is 103 to 1011.
Ceramic capacitors, which can be expected to have a long life, are currently being used as power sources for excimer lasers and other devices that are required several times. Due to the manufacturing process, it is difficult to increase the capacity of ceramic capacitors, and when applied to large-capacity power supplies such as plasma The problem was that I couldn't do it.
本発明の目的は、セラミックコンデンサの高集積化をは
かつて小形軽量で、かつ、高輝度X線が得られるプラズ
マX線源を提供することにある。An object of the present invention is to provide a plasma X-ray source that is compact and lightweight, and that can generate high-intensity X-rays, while achieving high integration of ceramic capacitors.
上記目的は、コンデンサバンクを平行導電板に複数個の
セラミックコンデンサをサンドイッチ状に配置し、かつ
、上記平行導電板の少なくとも1個所に電路を接続した
ものをユニットとし、電気的に上記ユニットを複数個並
列接続した構成として達成するようにした。The above purpose is to form a capacitor bank into a unit by arranging a plurality of ceramic capacitors in a sandwich shape on parallel conductive plates, and to connect an electric circuit to at least one place on the parallel conductive plates, and to electrically connect a plurality of the above units. This was achieved by connecting each unit in parallel.
上、中、下3板の平行導電板間に複数個のセラミックコ
ンデンサを配置して構成したコンデンサユニットの中板
にケーブル等で高圧電位を与え、上、下平行導電板には
低圧電位を与え、これにより上、下平行導電板は低電位
のため、各コンデンサユニットを積層する場合、各ユニ
ット間には電位差がなく、平行導電板間での電流通路を
遮へいする程度のわずかな絶縁を施す程度で積層できる
ため、高集積化が可能となる。A high-voltage potential is applied to the middle plate of the capacitor unit, which is constructed by arranging multiple ceramic capacitors between the upper, middle, and lower three parallel conductive plates, and a low-voltage potential is applied to the upper and lower parallel conductive plates. As a result, since the upper and lower parallel conductive plates have a low potential, when stacking each capacitor unit, there is no potential difference between each unit, and a small amount of insulation is applied to block the current path between the parallel conductive plates. Since stacking can be done in a relatively small amount, high integration becomes possible.
以下本発明を第1図〜第8図に示した実施例により詳細
を説明する。The present invention will be explained in detail below with reference to embodiments shown in FIGS. 1 to 8.
第1図は本発明のプラズマX線源のコンデンサユニット
構成の一実施例を示す一部断面図、第2図は第1図のA
−A ’矢視図である。第1図、第2図において、複数
個のセラミックコンデンサ1は平行導電板2,3.3’
にサンドイッチ状に配置されている。第2図は中央導電
板2に取り付けられたコンデンサ1の取付位置を示す、
実線で示すコンデンサ1は上部導電板3に、点線で示す
コンデンサ1′は下部導電板3′に取り付けられる。FIG. 1 is a partial sectional view showing an embodiment of the configuration of a capacitor unit of a plasma X-ray source of the present invention, and FIG.
-A' arrow view. 1 and 2, a plurality of ceramic capacitors 1 are connected to parallel conductive plates 2, 3.3'
are arranged in a sandwich-like manner. Figure 2 shows the mounting position of the capacitor 1 attached to the central conductive plate 2.
A capacitor 1 shown by a solid line is attached to the upper conductive plate 3, and a capacitor 1' shown by a dotted line is attached to the lower conductive plate 3'.
中央導電板2には、上、下のコンデンサが同時に取り付
けられるよう取付穴4,4′を距1ffdだけずらしで
ある。この場合、中央導電板2に高圧電位、上、不導電
板3,3′に低圧電位を与えるよう導電板を接続すると
、全コンデンサが並列に接続され、かつ、上、不導電板
3,3′は低圧電位になるため、コンデンサユニット5
は低電位状態で多数個の積層が可能になる。また、中央
導電板2は上、下コンデンサを同時に接続できるので導
電板1板を省略できる効果がある。The mounting holes 4 and 4' are offset by a distance of 1ffd in the central conductive plate 2 so that the upper and lower capacitors can be mounted at the same time. In this case, if the conductive plates are connected so as to give a high voltage potential to the central conductive plate 2 and a low voltage potential to the upper and non-conductive plates 3 and 3', all the capacitors are connected in parallel, and the upper and non-conductive plates 3 and 3' are connected in parallel. ' is a low voltage potential, so capacitor unit 5
allows multiple layers to be stacked at low potential. Furthermore, since the central conductive plate 2 can connect the upper and lower capacitors at the same time, there is an effect that one conductive plate can be omitted.
第3図は本発明によるコンデンサユニット5を積層して
構成したプラズマX線源の一実施例を示す一部断面図で
ある。コンデンサユニット5はコンデンサ容′rjI6
内に多数個集積して投口されている。第3図のコンデン
サ容器6の上部視図を第4図に示す。各コンデンサユニ
ット5は絶縁板7及び絶縁空間8により絶縁されている
。各ユニット5は絶縁板7を介して多段に積層されるが
、途中に補強板9を設けて、重量を支持できるようにな
っている。第3図により全体構成を説明する。交流電源
10より整流器11.ケーブル12を通して、多段に構
成されたコンデンサユニット5を充電する。各コンデン
サユニット5の一端には複数本の低インダクタンス同軸
ケーブル13が放電スイッチ14との間で接続されてい
る。放電スイッチ14より図示右側に示す放電路15.
16、真空容器17.対向電極18.19及び露光装置
20等はすべて特開昭60−151945と同一機能、
!I!b作のため、詳細な説明は省略する。各コンデン
サユニット5に充電された電荷を放電スイッチ14を通
して対向電極18.19間で放電させ、特性X線を放射
させる。この特性X線は取出窓21より露光袋[20内
のマスク22を介してウェハ23に照射し、露光される
。この場合、対向電極18.19間の通電電流は数10
0kAであり、パルス電流の立上り時間は数μsである
。X線発生輝度は注入エネルギーが大きいほど、また、
パルス電流の立上り時間が短かいほど大きい。注入エネ
ルギーの増加はコンデンサ容量の増加になりコンデンサ
収納容器の大形化とコスト高になる。FIG. 3 is a partial sectional view showing an embodiment of a plasma X-ray source constructed by laminating capacitor units 5 according to the present invention. The capacitor unit 5 has a capacitor capacity 'rjI6
A large number of them are accumulated and thrown out. A top view of the capacitor container 6 shown in FIG. 3 is shown in FIG. 4. Each capacitor unit 5 is insulated by an insulating plate 7 and an insulating space 8. Each unit 5 is stacked in multiple stages with insulating plates 7 in between, and reinforcing plates 9 are provided in the middle to support the weight. The overall configuration will be explained with reference to FIG. Rectifier 11 from AC power supply 10. The capacitor unit 5 configured in multiple stages is charged through the cable 12. A plurality of low inductance coaxial cables 13 are connected to one end of each capacitor unit 5 and a discharge switch 14 . A discharge path 15 shown on the right side of the figure from the discharge switch 14.
16. Vacuum container 17. The counter electrodes 18, 19, exposure device 20, etc. all have the same functions as those in JP-A-60-151945.
! I! Since this is a B work, a detailed explanation will be omitted. The charges stored in each capacitor unit 5 are discharged between opposing electrodes 18 and 19 through a discharge switch 14, and characteristic X-rays are emitted. The characteristic X-rays are irradiated onto the wafer 23 from the extraction window 21 through the mask 22 in the exposure bag [20], and the wafer 23 is exposed. In this case, the current flowing between the opposing electrodes 18 and 19 is several 10
0 kA, and the rise time of the pulse current is several μs. The higher the injection energy, the higher the X-ray generation brightness.
The shorter the rise time of the pulse current, the greater the value. An increase in injection energy results in an increase in capacitor capacity, resulting in a larger capacitor storage container and higher cost.
このため、注入エネルギーを一定にして、パルス電流の
立上り時間を短かくすることが望ましい。Therefore, it is desirable to keep the implantation energy constant and shorten the rise time of the pulse current.
これには放電路のインダクタンスの低減が肝要である0
本発明の実施例では、コンデンサユニット5の上、不導
電板が低電位のため、多数個のコンデンサユニット5が
低絶縁で積層できる他、第4図に示すようにコンデンサ
ユニット5間が同電位のため低絶縁で配置できるため、
コンデンサ全体の集積度が向上できる。この場合、コン
デンサはすべて並列接続されるため、コンデンサの等価
インダクタンスは極端に小さく、かつ、放電路を形成す
る同軸ケーブルの長さも短かくできるため、放電路のイ
ンダクタンスの値が小さくできる。このため、小容量の
コンデンサを用いても高輝度のX線が得られるという効
果がある。For this purpose, it is important to reduce the inductance of the discharge path.
In the embodiment of the present invention, since the non-conductive plate on the capacitor unit 5 has a low potential, a large number of capacitor units 5 can be stacked with low insulation, and as shown in FIG. 4, the capacitor units 5 are at the same potential. Because of this, it can be placed with low insulation.
The degree of integration of the entire capacitor can be improved. In this case, since all the capacitors are connected in parallel, the equivalent inductance of the capacitors is extremely small, and the length of the coaxial cable that forms the discharge path can also be shortened, so the inductance value of the discharge path can be reduced. Therefore, there is an effect that high-intensity X-rays can be obtained even if a small capacitance capacitor is used.
なお、本実施例では、コンデンサユニット5として組立
作業を考慮して2列2段構成のものを説明したが、さら
に集積度を向上するために多列にすることも可能であり
、集積度をさらに向上できる。また、本実施例では、組
立てを容易にするため、上、下2段積コンデンサの取付
位置をずらして構成したが、取付金具等を用いれば、上
、下回−位置での取り付けも可能であり、効果は変らな
い。In this embodiment, the capacitor unit 5 is constructed with two rows and two stages in consideration of assembly work, but it is also possible to use multiple rows to further improve the degree of integration. It can be improved further. In addition, in this example, in order to facilitate assembly, the mounting positions of the upper and lower two-stage multilayer capacitors were shifted, but it is also possible to mount them in the upper and lower positions by using mounting brackets, etc. Yes, the effect remains the same.
次に、本発明の他の実施例を第5図〜第8図を用いて説
明する。第5図は本発明の他の実施例を示すセラミック
コンデンサの断面図で、第6図は第5図の上面図である
。セラミックを電極板28で26と26′に分割し、そ
れぞれの電極板27゜27′と端子金具30.30’を
設け、これを外部引出端子とし、内部をエポキシ樹脂2
9等でモールドする。この構成はコンデンサの集積度向
上に効果的である。Next, another embodiment of the present invention will be described using FIGS. 5 to 8. FIG. 5 is a sectional view of a ceramic capacitor showing another embodiment of the present invention, and FIG. 6 is a top view of FIG. 5. The ceramic is divided into 26 and 26' by an electrode plate 28, and an electrode plate 27, 27' and a terminal fitting 30, 30' are provided for each, and these are used as external lead terminals, and the inside is coated with epoxy resin 2.
Mold with 9th grade. This configuration is effective in improving the degree of integration of the capacitor.
第7図、第8図はコンデンサユニットのさらに他の実施
例を示す。第7図は一部断面図、第8図は第7図のB−
B ’矢視図で、セラミックコンデンサ40を用いてコ
ンデンサユニット50を構成しである。平行導電板31
,32.31 ’は低電位に接続され、平行導電板33
は高圧電位に接続される。セラミックコンデンサ40の
内部より引き出した引出端子28は平行導電板339通
電用導体34.35で接続され、他の導体あるいはケー
ブル等を介して同電位に接続される0本発明の実施例に
よれば、コンデンサの集積度がさらに向上するため、コ
ンデンサを含めた電路のインダクタンス値が低減されて
X線輝度が向上するという効果がある。FIGS. 7 and 8 show still other embodiments of the capacitor unit. Fig. 7 is a partial cross-sectional view, and Fig. 8 is B- of Fig. 7.
B' is a diagram showing a capacitor unit 50 constructed using a ceramic capacitor 40. Parallel conductive plate 31
, 32.31' are connected to a low potential, parallel conductive plates 33
is connected to a high voltage potential. According to the embodiment of the present invention, the lead terminal 28 drawn out from the inside of the ceramic capacitor 40 is connected to the parallel conductive plate 339 and the current-carrying conductor 34, 35, and is connected to the same potential via another conductor or cable. Since the degree of integration of the capacitor is further improved, the inductance value of the electric circuit including the capacitor is reduced and the X-ray brightness is improved.
上記したように1本発明によれば、長寿命のセラミック
コンデンサを多数個集積できるため、プラズマX線源の
大容積コンデンサとして適用可能であり、小形軽量で高
輝度のxliAが得られるという効果がある。As described above, according to the present invention, a large number of long-life ceramic capacitors can be integrated, so it can be applied as a large-capacity capacitor for a plasma X-ray source, and the effect of obtaining a compact, lightweight, and high-luminance xliA is be.
第1図は本発明のプラズマX線源のコンデンサユニット
構成の一実施例を示す一部断面図、第2図は第1図のA
−A ’矢視図、第3図は本発明のプラズマX線源の一
実施例を示す一部断面図、第4図は第3図のコンデンサ
容器の上部親図、第5図は本発明の他の実施例を示すセ
ラミックコンデンサの断面図、第6図は第5図の上面図
、第7図は本発明のさらに他の実施例を示すコンデンサ
ユニットの一部断面図、第8図は第7図のB−B ’矢
視図である。
1.1′・・・セラミックコンデンサ、2,3.3’。
31.31’、32・・・平行導電板、5・・・コンデ
ンサユニット、6・・・コンデンサ容器、7・・・絶縁
板、9・・・補強板、12・・・ケーブル、13・・・
同軸ケーブル、14・・・放電スイッチ、15.16・
・・放電電路、17・・・真空容器、18.19・・・
対向電極、20・・・露光装置。
ネ 3 目
第4回FIG. 1 is a partial sectional view showing an embodiment of the configuration of a capacitor unit of a plasma X-ray source of the present invention, and FIG.
-A' arrow view, FIG. 3 is a partial sectional view showing an embodiment of the plasma X-ray source of the present invention, FIG. 4 is a top view of the capacitor container of FIG. 3, and FIG. 5 is the invention of the present invention. 6 is a top view of FIG. 5, FIG. 7 is a partial sectional view of a capacitor unit showing still another embodiment of the present invention, and FIG. 8 is a top view of FIG. 7. It is a BB' arrow view of FIG. 1.1'...ceramic capacitor, 2,3.3'. 31.31', 32... Parallel conductive plate, 5... Capacitor unit, 6... Capacitor container, 7... Insulating plate, 9... Reinforcement plate, 12... Cable, 13...・
Coaxial cable, 14...Discharge switch, 15.16.
...Discharge circuit, 17...Vacuum container, 18.19...
Counter electrode, 20... exposure device. Ne 3rd 4th
Claims (1)
放電装置と、該放電装置にパルス大電流を供給する電路
とコンデンサバンクとからなるプラズマX線源において
、前記コンデンサバンクを平行導電板に複数個のセラミ
ックコンデンサをサンドイッチ状に配置し、かつ、前記
平行導電板の少なくとも1個所に電路を接続したものを
ユニットとし、電気的に前記ユニットを複数個並列接続
した構成としたことを特徴とするプラズマX線源。 2、前記複数個のセラミックコンデンサをサンドイッチ
状に配置した平行導電板は、上、中、下の3枚を1組と
して1ユニットを構成している特許請求の範囲第1項記
載のプラズマX線源。 3、前記複数個のセラミックコンデンサをサンドイッチ
状に配置した平行導電板の上、中、下の3枚のうち上、
下の導電板には低圧電位を与え、中央の導電板には高圧
電位を与える特許請求の範囲第2項記載のプラズマX線
源。 4、前記複数個のセラミックコンデンサをサンドイッチ
状に配置した平行導電板の上、中、下の3枚のうち中央
の導電板を上、下に配置した前記セラミックコンデンサ
の共通電路として用いる構成としてある特許請求の範囲
第2項記載のプラズマX線源。[Scope of Claims] 1. A plasma X-ray source comprising a discharge device provided in a vacuum container and having at least one pair of electrodes, an electric circuit for supplying a pulsed large current to the discharge device, and a capacitor bank, wherein the capacitor bank A configuration in which a plurality of ceramic capacitors are arranged in a sandwich shape on parallel conductive plates, and an electric path is connected to at least one place on the parallel conductive plates is used as a unit, and a plurality of the units are electrically connected in parallel. A plasma X-ray source characterized by: 2. The plasma X-ray according to claim 1, wherein the parallel conductive plates on which the plurality of ceramic capacitors are arranged in a sandwich form constitute one unit with three plates, upper, middle, and lower, as one set. source. 3. The upper of the three parallel conductive plates, upper, middle, and lower, on which the plurality of ceramic capacitors are arranged in a sandwich manner;
3. The plasma X-ray source according to claim 2, wherein a low voltage potential is applied to the lower conductive plate and a high voltage potential is applied to the central conductive plate. 4. The plurality of ceramic capacitors are arranged in a sandwich-like manner, and the middle conductive plate among the upper, middle, and lower three parallel conductive plates is used as a common electrical path for the ceramic capacitors arranged above and below. A plasma X-ray source according to claim 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62151186A JPS63316000A (en) | 1987-06-19 | 1987-06-19 | Plasma x-ray source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62151186A JPS63316000A (en) | 1987-06-19 | 1987-06-19 | Plasma x-ray source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63316000A true JPS63316000A (en) | 1988-12-23 |
Family
ID=15513160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62151186A Pending JPS63316000A (en) | 1987-06-19 | 1987-06-19 | Plasma x-ray source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63316000A (en) |
-
1987
- 1987-06-19 JP JP62151186A patent/JPS63316000A/en active Pending
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