JPS63315597A - Ring-shaped diamond and apparatus for producing same - Google Patents
Ring-shaped diamond and apparatus for producing sameInfo
- Publication number
- JPS63315597A JPS63315597A JP14811587A JP14811587A JPS63315597A JP S63315597 A JPS63315597 A JP S63315597A JP 14811587 A JP14811587 A JP 14811587A JP 14811587 A JP14811587 A JP 14811587A JP S63315597 A JPS63315597 A JP S63315597A
- Authority
- JP
- Japan
- Prior art keywords
- ring
- substrate
- diamond
- reaction vessel
- filament
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 35
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract 1
- 239000010437 gem Substances 0.000 abstract 1
- 229910001751 gemstone Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ダイヤモンドの耐摩耗・スベリ注を利用した
軸受や、指輪等装飾品として用い得る環状ダイヤモンド
及びその製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a ring-shaped diamond that can be used as a bearing, a ring, or other decorative item that utilizes the wear resistance and sliding properties of diamond, and an apparatus for manufacturing the same.
熱フィラメンＩｆ利用した気相法による従来のダイヤモ
ンドの製造方法ｔ−第４図によって説明する。第４図に
おいて、０１は石英製反応容器、０３はフィラメント（
タングステン）、０４はフィラメント通電用導線、０５
は基板、０６は基板支持具、０７は通電端子、０８は減
圧ポンプ、０９は圧力調節弁、０１０はカス導入管、０
１２は′電気炉、０１３は圧力計でるる。A conventional method for manufacturing diamond by a vapor phase method using a hot filament If will be explained with reference to FIG. In Fig. 4, 01 is a quartz reaction vessel, 03 is a filament (
tungsten), 04 is a conductive wire for filament current, 05
06 is the substrate support, 07 is the current terminal, 08 is the pressure reducing pump, 09 is the pressure control valve, 010 is the waste introduction pipe, 0
12 is the electric furnace, and 013 is the pressure gauge.
石英製反応容器０１内を減圧ポンプ０８により排気浄化
し、水素に例えば１％程度のメタンを混合したカスをガ
ス導入管０１０よジ該反応容器０１内に導き、該反応容
器０１内を圧力計０１５ｔ−みながら圧力調節９Ｐ０９
ｔ−調節して約１００ Ｔｏｒｒ 程度に保持する。The inside of the quartz reaction vessel 01 is exhausted and purified by a vacuum pump 08, and the residue, which is a mixture of hydrogen and about 1% methane, is introduced into the reaction vessel 01 through the gas introduction pipe 010, and the inside of the reaction vessel 01 is measured with a pressure gauge. 015t-Pressure adjustment while watching 9P09
The pressure is maintained at approximately 100 Torr by adjusting the temperature.
前記反応容器０１内には基板支持具０６によって平板状
の基板０５が配置され、その基板０５から数■程度能れ
た位置にタングステンフィラメント０３が設けられてい
る。更に、前記反応容器０１の外周部には電気炉０１２
が配置されており、基＠０５を６００℃〜１．０００℃
に保持し、前記タングステンフィラメント０５を通電端
子０７より通電用導線０４を通じて２，５００℃程度に
通電加熱することにより、ダイヤモンドを平板状の基板
０５上に析出させるようにしている。A flat substrate 05 is placed in the reaction vessel 01 by a substrate support 06, and a tungsten filament 03 is provided at a position several inches away from the substrate 05. Further, an electric furnace 012 is installed on the outer periphery of the reaction vessel 01.
is arranged, and the group @05 is heated to 600℃~1.000℃
The diamond is deposited on the flat substrate 05 by heating the tungsten filament 05 to about 2,500° C. through the current-carrying conductor 04 from the current-carrying terminal 07.
ダイヤモンドのもつ特注として、硬度が大きい、熱伝尋
度が高い、化学的に安定、絶縁体である、不純物ドープ
により半導体化が可能、摩擦係数が小さい等のことから
、ＩＣ基盤や切削工具の耐摩耗コーティング、太陽電池
の反射防止膜といったことに適用するためなど、薄膜ダ
イヤモンドを求めるため徨々の開発や改良が試みられて
いる。Diamond has special features such as high hardness, high thermal conductivity, chemical stability, is an insulator, can be made into a semiconductor by doping with impurities, and has a small friction coefficient, making it ideal for IC boards and cutting tools. Many attempts are being made to develop and improve thin film diamonds for applications such as wear-resistant coatings and anti-reflection coatings for solar cells.
しかしながら、これらは何れも平板状の基板の上にダイ
ヤモンドの析出を求めるものでアリ、直ちに環状のダイ
ヤモンドを求められると云うものではない。However, all of these methods require diamond to be deposited on a flat substrate, and do not necessarily lead to the production of ring-shaped diamond.
本発明は、前記した％性の中でも特に＊擦係数が小さい
ことに着目し、軸受けに利用したり。The present invention focuses on the fact that the coefficient of friction is particularly small among the above-mentioned properties, and utilizes it in bearings.
また指輪等装飾品への適用も可能な環状ダイヤモンド及
びその製造装置ｔを提供しようとするものである。It is also an object of the present invention to provide a ring-shaped diamond and an apparatus for manufacturing the same which can be applied to ornaments such as rings.
すなわち本発明は、
＋１１ 環状の基板と当該基板の上に気相法によジ生
成されたダイヤモンドよりなること’（ｉｌ−％徴とす
る環状ダイヤモンド、及び
（２） 反応容器、該反応容器内に設置された環状基
板支持具、該支持具に支持された環状基板、該環状基板
面に沿って配設されたフィラメント及び該反応容器の内
周面に沿って配置された熱反射板を有してなることを特
徴とする環状ダイヤモンドの製造装置
である。That is, the present invention comprises: +11 a ring-shaped substrate; a ring-shaped diamond formed on the substrate by a vapor phase method; and (2) a reaction vessel; an annular substrate support installed in the reactor, an annular substrate supported by the support, a filament disposed along the surface of the annular substrate, and a heat reflecting plate disposed along the inner peripheral surface of the reaction vessel. This is an annular diamond manufacturing apparatus characterized by:
上記本発明装置の構成において、■環状基板に沿って配
設されるフィラメントは、環状基板の外表面及び／又は
内表面に設けることができ、■また環状基板支持具を回
転させ、必要に応じて同時に上下に移動できるようにす
ることもでき、■更に熱反射板を凹面状として反射熱を
環状基板に集中させるようにするもできる。In the configuration of the device of the present invention described above, (1) the filament disposed along the annular substrate can be provided on the outer surface and/or the inner surface of the annular substrate, and (2) the annular substrate support can be rotated to (2) Furthermore, the heat reflecting plate can be made concave so that the reflected heat is concentrated on the annular substrate.
本発明装置に用いられる環状基板を支持する支持具は一
般的には熱伝導性のよい金属、例えば銅などが用いられ
、環状基板としてはダイヤモンドの析出し易いモリブデ
ンやタングステンなどが用いられる。また熱反射板とし
ては熱線を反射する面を有する材料ならば何んでもよい
が、特にカラス状物質に金の蒸着膜をコーティングした
ものが好ましい。The support for supporting the annular substrate used in the apparatus of the present invention is generally made of a metal with good thermal conductivity, such as copper, and the annular substrate is made of molybdenum, tungsten, or the like, on which diamond tends to precipitate. The heat reflecting plate may be made of any material as long as it has a surface that reflects heat rays, but a glass-like material coated with a vapor-deposited gold film is particularly preferred.
環状のダイヤモンドを求め得るよう環状基板面上に沿う
ようにフィラメントを配設してあり、かつ反応容器の内
周面に熱反射板が設けられているので、該フィラメント
が２，５００℃のような高温になると、該フィラメント
も環状となっていることから、該フィラメントから発せ
られる熱は反応容器内の全周方向に平均的に放散し、こ
れが熱反射板によって反応容器軸心方向、すなわち環状
基板方向に集束反射させることになり、結局熱効率を高
めることができ、従来のように外部電気炉で加熱しない
でも、基板温度を６００℃〜１，０００℃に保つことが
できるようになった。A filament is placed along the surface of the annular substrate in order to obtain a ring-shaped diamond, and a heat reflecting plate is provided on the inner circumferential surface of the reaction vessel, so that the filament is heated to 2,500°C. When the temperature reaches a certain temperature, since the filament is also annular, the heat emitted from the filament is radiated evenly in the entire circumference inside the reaction vessel, and this is reflected by the heat reflection plate in the axial direction of the reaction vessel, that is, in the annular shape. By focusing and reflecting the light in the direction of the substrate, the thermal efficiency can be increased, and the substrate temperature can now be maintained at 600° C. to 1,000° C. without heating in an external electric furnace as in the past.
以下、本発明装置の実施例をあげ本発明を更に詳述する
。Hereinafter, the present invention will be explained in further detail by giving examples of the present invention apparatus.
〔実施例１〕
第１図は本発明装置の一実施？ｌＪを示すもので、（ａ
）Ｖｉその概略縦断面図、（１））は（ａ）のＡ−Ａ矢
視断面図である。第１図、第２図中、１は石英製反応装
置、２は熱反射板、３はフィラメント（タングステン）
、４はフィラメント通電用導線、５は環状基板、６は基
板支持具、７は通電端子、８は減圧ポンプ、９は圧力調
節弁、１０はガス導入管である。[Example 1] Fig. 1 shows one implementation of the device of the present invention? It shows lJ, (a
)Vi is a schematic longitudinal cross-sectional view thereof, and (1)) is a cross-sectional view taken along the line A-A in (a). In Figures 1 and 2, 1 is a quartz reactor, 2 is a heat reflector, and 3 is a filament (tungsten).
, 4 is a filament energizing conductor, 5 is an annular substrate, 6 is a substrate support, 7 is an energizing terminal, 8 is a pressure reducing pump, 9 is a pressure regulating valve, and 10 is a gas introduction pipe.
第１図により説明すると、反応容器１のはｙ中心部にＣ
ｕ等でできた基板支持具６があり、この基板支持具６に
環状基板５が置かれる。この基板５は一般的にはモリブ
デンやタングステン等のダイヤモンドを析出するに容易
な金属が用いられるが、セラミックス材などであっても
よい。To explain with reference to FIG. 1, the reaction vessel 1 has a C
There is a substrate support 6 made of U or the like, and the annular substrate 5 is placed on this substrate support 6. The substrate 5 is generally made of a metal such as molybdenum or tungsten on which diamond can be easily deposited, but it may also be made of a ceramic material.
基板５から数■離れ次位置に、はソ同心円状にフィラメ
ント５が配置され、更にその外周と反応容器１の間に熱
反射板２が設けられている。A filament 5 is arranged concentrically several inches away from the substrate 5, and a heat reflecting plate 2 is further provided between the outer periphery of the filament 5 and the reaction vessel 1.
また、反応容器１にはガス導入管１０、減圧ポンプ８、
圧力調節弁９が設けられており、その他図示していない
が基板支持具を冷却するための冷却水通路口などを有し
ている。In addition, the reaction vessel 1 includes a gas introduction pipe 10, a pressure reduction pump 8,
A pressure regulating valve 9 is provided, and although not shown, it also has a cooling water passage opening for cooling the substrate support.
このような構成の装置において、先ず減圧ポンプ８で反
応容器１内ｔ−排気浄化し、ガス導入管１０からＨ，：
９９％、 ＣＨ４： １％の混合カスを導入し、反応容
器１内圧力が１００ Ｔｏｒｒ 程度となるように前
記混合ガス供給量を調整する。In the apparatus having such a configuration, first, the inside of the reaction vessel 1 is purified by the vacuum pump 8, and then the H,:
A mixed gas mixture of 99% CH4 and 1% CH4 is introduced, and the amount of the mixed gas supplied is adjusted so that the pressure inside the reaction vessel 1 is about 100 Torr.
次にフィラメント３を通電し白熱化させ、同フィラメン
ト温度を２，５００℃程度とする。Next, the filament 3 is energized to make it incandescent, and the filament temperature is set to about 2,500°C.
このとき、フィラメント３の熱は外方向にも拡散される
が、熱反射板２により外部への放熱を減少させ、反応容
器１室内を６００℃〜１．０００℃に保てるようにし、
基板＠度も同温度で保持できるようにする。At this time, the heat of the filament 3 is also diffused outward, but the heat radiation to the outside is reduced by the heat reflection plate 2, so that the inside of the reaction vessel 1 can be maintained at 600°C to 1.000°C.
The substrate@℃ can also be maintained at the same temperature.
このようにすることでダイヤモンド生成の条件が確保さ
れたこととなｐ、同環境条件の状態を約５時間程度保持
すれば基板５上に約２０μｍの厚さのダイヤモンドが環
状に形成される。By doing this, the conditions for diamond formation are ensured, and if the same environmental conditions are maintained for about 5 hours, a ring-shaped diamond with a thickness of about 20 μm will be formed on the substrate 5.
この第１図に示した実施装置は、環状基板５の外周面上
へのダイヤモンドの形成を狙ったものであるが、内周面
上に形成させる必要がある場合には、環状の基板の内側
にフィラメント３を配置すればよい。但し、この場合は
反応容器１外部に電気炉を設けないとすると、反応容器
１内の温度を６００℃〜ｔ、ｏｏｏ’ｃに保つのがフィ
ラメント５のみでは困難であるので、熱反射板２にはガ
ラス状物質に金蒸着膜でコーティングしたものを用いる
とよい。この熱反射板は可視元ｆｉ！は透過させるが、
赤外ｍを反射する機能を有しており、熱の反射効率が高
くなりフィラメント５が環状基板内部にあっても充分機
能する。The implementation apparatus shown in FIG. 1 is intended to form diamonds on the outer peripheral surface of the annular substrate 5, but if it is necessary to form diamonds on the inner peripheral surface, diamonds can be formed on the inner peripheral surface of the annular substrate 5. The filament 3 may be placed at. However, in this case, if an electric furnace is not provided outside the reaction vessel 1, it is difficult to maintain the temperature inside the reaction vessel 1 at 600°C to t, ooo'c using only the filament 5, so the heat reflecting plate 2 It is recommended to use a glass-like material coated with a gold vapor deposition film. This heat reflector is visible! is transparent, but
It has a function of reflecting infrared rays m, and has a high heat reflection efficiency, so that it functions satisfactorily even if the filament 5 is inside the annular substrate.
なお、フィラメント３を環状基板５の内外両側に配置し
、環状基板５の内外同時にダイヤモンドを形成するとと
も可能である。It is also possible to arrange the filament 3 on both the inner and outer sides of the annular substrate 5 and form diamonds on both the inner and outer sides of the annular substrate 5 at the same time.
〔実施例２〕
第２図は本発明装置の他の実施例を示すもので、第２図
中、第１図と同一符号は第１図と同一部を示すので説明
を省略する。１１はモータ、１２は真空シールである。[Embodiment 2] FIG. 2 shows another embodiment of the apparatus of the present invention, and in FIG. 2, the same reference numerals as in FIG. 1 indicate the same parts as in FIG. 1, so the explanation will be omitted. 11 is a motor, and 12 is a vacuum seal.
この第２図の実施例は第１図の装置における環状基板５
を回転しつるように、環状基板５の支持具６を反応容器
１外に真空シール１２を介して設けられたモータ１１に
より回転するようにしたものである。このように環状基
板５を回転させるのは、環状基板５とフィラメント５の
距離は一定にしである積りでも誤差があるため、環状基
板５上へのダイヤモンドの生長速度が異なることがある
のでこれを防止する九めに行うものである。The embodiment shown in FIG. 2 is similar to the annular substrate 5 in the apparatus shown in FIG.
The support 6 of the annular substrate 5 is rotated by a motor 11 provided outside the reaction vessel 1 via a vacuum seal 12 so that the annular substrate 5 is rotated and suspended. The reason why the annular substrate 5 is rotated in this way is that even though the distance between the annular substrate 5 and the filament 5 is constant, there is an error even in a certain distance, so the growth rate of the diamond on the annular substrate 5 may vary. This is the ninth thing you can do to prevent it.
その他の条件は第１図に関して説明し九通りとして、装
置を作動させた結果、約５時間後、約１５μｍの厚さの
均一な層の環状ダイヤモンドを得ることができた。The apparatus was operated under nine other conditions as described with reference to FIG. 1, and as a result, a uniform layer of ring-shaped diamond with a thickness of about 15 μm could be obtained after about 5 hours.
なお環状基板５の幅が大きい場合には、環状基板５を回
転させると同時に、基板支持具６を軸方向に上下させ、
環状基板５の幅全体にわたって、ダイヤモンドを均一に
付着させることもできる。Note that when the width of the annular substrate 5 is large, the annular substrate 5 is rotated and the substrate support 6 is moved up and down in the axial direction at the same time.
It is also possible to deposit diamond uniformly over the entire width of the annular substrate 5.
〔実施例３〕
第３図は本発明の更に他の実施例を示すもので、第３図
中、第１図と同一符号は第１図と同一部を示すので説明
を省略する。２′は熱反射板であるが、フィラメント３
より放散された熱が環状基板５に集束反射するように凹
面にした熱反射板である。[Embodiment 3] FIG. 3 shows still another embodiment of the present invention. In FIG. 3, the same reference numerals as in FIG. 1 indicate the same parts as in FIG. 1, and the explanation thereof will be omitted. 2' is a heat reflecting plate, and filament 3
This is a heat reflecting plate having a concave surface so that more dissipated heat is focused and reflected on the annular substrate 5.
熱反射板２′をこのように構成することにより、環状基
板５の温度上昇速度を速くすることができ、かつまた第
１図、第２図の実施例の装置に比し環状基板温度の最高
到達温度も高くすることができる。By configuring the heat reflecting plate 2' in this manner, the rate of temperature rise of the annular substrate 5 can be increased, and the maximum temperature of the annular substrate can be increased compared to the apparatus of the embodiment shown in FIGS. The temperature reached can also be increased.
以上、実施例として特殊な装置をあげて説明したが、各
実施例装置の有利性を結合した装置も当然本発明装置の
範嗜に入るものでおる。Although special devices have been described above as embodiments, devices that combine the advantages of the devices of each embodiment naturally also fall within the scope of the device of the present invention.
本発明によれば、環状のダイヤモンドを得ることができ
るため、軸受は或いは、高圧水のノズルと云ったものの
保護が可能となり、工業的に有用であると共に、生成さ
れるものがダイヤモンドであるところから、指輪等の装
飾品としても利用できる。According to the present invention, since ring-shaped diamond can be obtained, it is possible to protect bearings or high-pressure water nozzles, and this invention is industrially useful. It can also be used as ornaments such as rings.
第１図〜第３図は、別々な本発明の環状ダイヤモンド製
造装置の概略Ｍ断面図であり、第４図は従来の平たい基
板上へのダイヤモンドを析出させる装置の概略縦断面図
である。1 to 3 are schematic M cross-sectional views of separate annular diamond manufacturing apparatuses of the present invention, and FIG. 4 is a schematic vertical cross-sectional view of a conventional apparatus for depositing diamond on a flat substrate.
Claims (2)
れたダイヤモンドよりなることを特徴とする環状ダイヤ
モンド。(1) A ring-shaped diamond characterized by comprising a ring-shaped substrate and diamond produced on the substrate by a vapor phase method.
持具、該支持具に支持された環状基板、該環状基板面に
沿つて配設されたフィラメント及び該反応容器の内周面
に沿つて配置された熱反射板を有してなることを特徴と
する環状ダイヤモンドの製造装置。(2) A reaction vessel, an annular substrate support installed in the reaction vessel, an annular substrate supported by the support, a filament disposed along the annular substrate surface, and an inner peripheral surface of the reaction vessel. 1. An annular diamond manufacturing device comprising a heat reflecting plate arranged along the ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14811587A JPS63315597A (en) | 1987-06-16 | 1987-06-16 | Ring-shaped diamond and apparatus for producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14811587A JPS63315597A (en) | 1987-06-16 | 1987-06-16 | Ring-shaped diamond and apparatus for producing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63315597A true JPS63315597A (en) | 1988-12-23 |
Family
ID=15445590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14811587A Pending JPS63315597A (en) | 1987-06-16 | 1987-06-16 | Ring-shaped diamond and apparatus for producing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63315597A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6425805B1 (en) | 1999-05-21 | 2002-07-30 | Kennametal Pc Inc. | Superhard material article of manufacture |
-
1987
- 1987-06-16 JP JP14811587A patent/JPS63315597A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6425805B1 (en) | 1999-05-21 | 2002-07-30 | Kennametal Pc Inc. | Superhard material article of manufacture |
| US6790497B2 (en) | 1999-05-21 | 2004-09-14 | Kennametal Pc Inc. | Superhard material article of manufacture |
| US6924454B2 (en) | 1999-05-21 | 2005-08-02 | Kennametal Pc Inc. | Method of making an abrasive water jet with superhard materials |
| US7357697B2 (en) | 1999-05-21 | 2008-04-15 | Kennametal Inc. | Superhard material article of manufacture |
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