JPS63314757A - Manufacture of electronic equipment integrated with condensing element - Google Patents
Manufacture of electronic equipment integrated with condensing elementInfo
- Publication number
- JPS63314757A JPS63314757A JP62150615A JP15061587A JPS63314757A JP S63314757 A JPS63314757 A JP S63314757A JP 62150615 A JP62150615 A JP 62150615A JP 15061587 A JP15061587 A JP 15061587A JP S63314757 A JPS63314757 A JP S63314757A
- Authority
- JP
- Japan
- Prior art keywords
- bare
- storage element
- condensing element
- moisture
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 230000005611 electricity Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000003566 sealing material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 230000032683 aging Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000007784 solid electrolyte Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000004146 energy storage Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910003092 TiS2 Inorganic materials 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910001679 gibbsite Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/20—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Sealing Battery Cases Or Jackets (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電池等の蓄電素子を抵抗、コンデンサ、ＩＣ
チップ等の電子部品と一体化した電子機器の製造法に関
する。更に詳しくは、発電素子と電子部品とを同一パッ
ケージ内に納めた、ＩＣあるいはＩＣカード等の小型電
子機器の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention applies to storage devices such as batteries, resistors, capacitors, and ICs.
It relates to a method of manufacturing electronic devices integrated with electronic components such as chips. More specifically, the present invention relates to a method of manufacturing a small electronic device such as an IC or an IC card in which a power generation element and an electronic component are housed in the same package.
従来の技術
近年、半導体の集積化が進み、ひとつのＩＣチップで各
種機能を有する電子機器、例えば、ポケット計算機、電
子ウォッチ、ＩＣカード等が登場するに至り、これら電
子機器あるいはＩＣそのものを駆動するための電源とし
て、小形類うす形電池等の蓄電素子開発研究がさかんに
なっている。BACKGROUND OF THE INVENTION In recent years, the integration of semiconductors has progressed, leading to the emergence of electronic devices that have various functions on a single IC chip, such as pocket calculators, electronic watches, and IC cards. Research is currently underway to develop energy storage devices such as small thin batteries as power sources for this purpose.
これらＩＣまたは電子機器（以下、ワンチップＩＣ機器
と呼ぶ）は、演算、記憶等に必要な機能を備えたＩＣチ
ップ、外付けの抵抗、コンデンサー、必要に応じ液晶表
示板等の表示パネル、および蓄電素子である太陽電池又
は通常電池、これらを納めるプラスチック製の容器で構
成される。そしてさらにこれらワンチップＩＣ機器の小
形うす形を追求していく中で、外付けの抵抗、コンデン
サーはＩＣチマグの中に組み込まれるようになり、蓄電
素子についても例外でなく、ＩＣチップと同一のパッケ
ージ内に組み込まれようとしているうこのような中で、
蓄電素子として、液体電解質が使われ一定の大きさの専
用の容器が必要な従来の銀電池、リチウム電池等に代わ
り、蓄電素子が全て固体である固体電解質電池が、この
ようなワンチップＩＣ機器用の電源として注目され始め
ている。すなわち、固体電解質電池は、液体物質を用い
ていないので電池を納めるための専用の容器が特に必要
でなく、ＩＣチップと容易にひとつのノ（ソケージ内に
一体化できる。These ICs or electronic devices (hereinafter referred to as one-chip IC devices) include an IC chip with functions necessary for calculation, storage, etc., external resistors, capacitors, display panels such as liquid crystal display boards as necessary, and It consists of a solar battery or regular battery as a power storage element, and a plastic container to house them. In pursuit of smaller and thinner one-chip IC devices, external resistors and capacitors have come to be incorporated into IC chips, and power storage elements are no exception. In the midst of things that are about to be incorporated into the package,
Instead of conventional silver batteries, lithium batteries, etc., which use a liquid electrolyte as a storage element and require a dedicated container of a certain size, solid electrolyte batteries, in which the storage element is entirely solid, are used in these one-chip IC devices. It is beginning to attract attention as a power source for That is, since a solid electrolyte battery does not use a liquid substance, there is no need for a special container for storing the battery, and it can be easily integrated with an IC chip into a single cage.
発明が解決しようとする問題点
蓄電素子を一体化したワンチップＩＣ機器を製造する際
、パッシベーション材料の簡素化をはかルタメニ、パッ
シベーション材料により蓄電素子。Problems to be Solved by the Invention When manufacturing a one-chip IC device that integrates a power storage element, it is possible to simplify the passivation material and use the passivation material to form the power storage element.
ＩＣチップ等をそれぞれ独自にしたのち、あらためて一
体化する２段階工程を、封止されていない裸の発電素子
とＩＣチップ等の電子部品を段階１工程で封止一体化す
る事が好ましい。It is preferable to carry out a two-step process in which IC chips and the like are made unique and then re-integrate, and to seal and integrate the unsealed bare power generating element and the electronic components such as the IC chips in a single-step process.
しかしながら、１段階工程では、蓄電素子を構成する材
料の一部が（これら材料は一般にイオン性の強い酸化剤
、還元剤である）組み立て工程中のガス雰囲気中の水分
と反応し蓄電素子の性能が劣化したり、これら材料の一
部が、あるいはこれら材料と水分との反応生成物の一部
が飛散し、裸のＩＣチップ等へ付着し、雰囲気中の水分
が介在して、ＩＣチップ等を構成している材料と反応し
これらを破損する問題がある。However, in the one-step process, some of the materials constituting the energy storage element (these materials are generally strong ionic oxidizing agents and reducing agents) react with moisture in the gas atmosphere during the assembly process, resulting in the performance of the energy storage element. may deteriorate, or part of these materials or a part of the reaction product between these materials and moisture may scatter and adhere to bare IC chips, etc., and moisture in the atmosphere may intervene, causing IC chips, etc. There is a problem with reacting with the materials that make up the product and damaging them.
例えば、蓄電素子の材料としてＴ ｉＳ２等の硫化物を
含む場合、硫化物は水分と反応しＨ２Ｓガスを放出する
っ蓄電素子自体の性能も劣化するのみならず、放出され
たＨ２Ｓガスは、ＩＣチップの外表面のアルミ配線部へ
付着し、これを腐食して回路の断線等を起こす。For example, when a sulfide such as TiS2 is included as a material for a power storage element, the sulfide reacts with moisture and releases H2S gas.Not only does the performance of the power storage element itself deteriorate, but the released H2S gas is It adheres to the aluminum wiring on the outer surface of the chip and corrodes it, causing circuit breaks.
本発明は上記問題点を解消し、経時特性の安定電子機器
の製造法を提供するものである。The present invention solves the above-mentioned problems and provides a method for manufacturing an electronic device with stable characteristics over time.
問題点を解決するための手段
本発明は、このような問題点を解決するもので、本発明
においては、裸の蓄電素子と裸のＩＣチップ等の電子部
品とを、実質上水分の除かれた空気あるいは窒素、アル
ゴン等の不活性ガス雰囲気中で、一体化封止する。実質
的に水分が除かれた空気あるいは不活性ガス雰囲気とは
、露点がマイナス４０″Ｃ以下のガス雰囲気を言う。Means for Solving the Problems The present invention solves these problems. In the present invention, a bare electricity storage element and a bare electronic component such as an IC chip are removed by substantially removing moisture. The unit is sealed in air or an inert gas atmosphere such as nitrogen or argon. Air substantially free of moisture or an inert gas atmosphere refers to a gas atmosphere with a dew point of -40''C or less.
作 用
本発明においては、実質上水分が除かれた雰囲気中で裸
の蓄電素子と、ＩＣチップ等の電子部品を一体化封止す
るので、雰囲気中の水分と蓄電素子の材料とが反応して
蓄電素子の性能が劣化することはない。蓄電素子から飛
散した材料が、水分と反応することがないため、裸の電
子部品へ付着してこれを破損することはない。Function In the present invention, a bare power storage element and an electronic component such as an IC chip are integrally sealed in an atmosphere from which moisture is substantially removed, so that the moisture in the atmosphere and the material of the power storage element react with each other. Therefore, the performance of the power storage element does not deteriorate. Since the material scattered from the power storage element does not react with moisture, it will not adhere to bare electronic components and damage them.
実施例 以下、実施例によシ説明する。Example Examples will be explained below.
裸の蓄電素子
正極活物質のＣｕ０．１ＴｉＳ２粉末５０ｉ量部と固体
停電解質ＲｂＣｕ４１４．５Ｃ１３，５粉末５０重量部
とを混合した正極合剤粉末と、固体電解質ＲｂＣｕ４１
１．６ＣＩ３．５粉末と、負極活物質の金属銅粉末８０
重量部と固体電解質ＲｂＣｕ４１１．６ＣＩ、６粉末２
０重量部とを混合した負極粉末とを、正極層。A positive electrode mixture powder obtained by mixing 50 parts by weight of Cu0.1TiS2 powder as a bare electricity storage element positive electrode active material and 50 parts by weight of solid power failure electrolyte RbCu414.5C13,5 powder, and solid electrolyte RbCu41.
1.6CI3.5 powder and negative electrode active material metal copper powder 80
Weight parts and solid electrolyte RbCu411.6CI, 6 powder 2
0 parts by weight of the negative electrode powder mixed with the positive electrode layer.
固体電解質層、負極層の順で三層となるように２ｏｏＫ
Ｐｌｃｒｄの圧力で加圧成形し、直径７１ｆｆ、厚さ１
．２ｆｆｌの固体電解質電池を作り、これを蓄電素子と
した。2ooK so that there are three layers in the order of solid electrolyte layer and negative electrode layer.
Pressure molded with Plcrd pressure, diameter 71ff, thickness 1
．． A 2ffl solid electrolyte battery was made and used as a power storage element.
裸の電子部品
裸の電子部品の一部として、大きさ１ｏ×１゜ｎのシリ
コン基盤上に、両端に２Ｘ２ｆｌの電気抵抗測定端子部
を有した巾０．５ｆｌ、全体の長さ９Ｈのパターンの厚
さ約２μｍのアルミ薄膜をスツパツタ蒸着したものを用
意した。Bare electronic component As a part of the bare electronic component, a pattern with a width of 0.5 fl and a total length of 9 H, which has electrical resistance measurement terminals of 2 x 2 fl at both ends, is placed on a silicon substrate with a size of 10 x 1゜n. A thin aluminum film having a thickness of approximately 2 μm was sputter-deposited.
以上用意した裸の蓄電素子と裸の電子部品の一部とを、
直径１ｏ１．長さ１ｍのガラス管の中央部に１０ｆｆ隔
てて配置した。ガラス管の一端よシ、水分量を変えた２
０″Ｃの空気を毎分０．６リツトルの割合で８時間通じ
た後、アルミ薄膜の変色の程度を目視により観察し、ま
たアルミ薄膜の表面をＸｖＩＡマイクロアナライザーに
より分析し硫黄の有無を調べた。また、アルミ薄膜の電
気抵抗を試験前（Ｒｏ）、試験後（Ｒ）で測定してその
増加の程度をＲ／Ｒ０で評価した。さらに、試験後の蓄
電素子をとり出し１００μＡで定電流放電を行い、電圧
が０．３ｖ以下になるまでの放電容量を測定した。The bare energy storage element and some of the bare electronic components prepared above are
Diameter 1o1. They were placed at a distance of 10 ff in the center of a 1 m long glass tube. Changed the water content at one end of the glass tube 2
After passing 0"C air at a rate of 0.6 liters per minute for 8 hours, the degree of discoloration of the aluminum thin film was visually observed, and the surface of the aluminum thin film was analyzed using an XvIA microanalyzer to check for the presence of sulfur. In addition, the electrical resistance of the aluminum thin film was measured before the test (Ro) and after the test (R), and the degree of increase was evaluated using R/R0.Furthermore, after the test, the electricity storage element was taken out and fixed at 100 μA. A current discharge was performed, and the discharge capacity was measured until the voltage became 0.3 V or less.
なお、用いた蓄電素子の電圧は、０．５２Ｖ 、試験前
の放電容量は、１ 、１ ｍＡｈである。結果を表に示
す。Note that the voltage of the electricity storage element used was 0.52 V, and the discharge capacity before the test was 1.1 mAh. The results are shown in the table.
以上の結果より、本発明に従い実質的に水分を含まない
露点が一４０°Ｃ以下の乾燥空気を用いると、蓄電素子
からの飛散によるものと考えられる硫黄によるアルミ薄
膜の腐食は起こらない。露点が一４０″Ｃを越える空気
を用いると、空気中の水分が蓄電素子のＣｕ０．１Ｔｉ
Ｓ２と反応し、微量のＨ，Ｓガスが発生して、これがア
ルミ薄膜に付着し黄色ないし茶色のＡｌ２Ｓ３が生成し
ているものと考えられる。さらに露点の高い空気の場合
は、生成したＡｌ２Ｓ３が空気中の水分と反応して乳白
色の電気絶縁性のＡｌ（ＯＨ）３が生成したものと考え
られ、これがアルミ薄膜の電気抵抗の増大をもたらした
ものと考えられる。また、蓄電素子自体の性能も、露点
が一４０″Ｃ以上の空気を用いると劣化する。From the above results, when dry air containing substantially no water and having a dew point of 140° C. or less is used according to the present invention, corrosion of the aluminum thin film by sulfur, which is thought to be caused by scattering from the electricity storage element, does not occur. If air with a dew point exceeding 140"C is used, the moisture in the air will cause the Cu0.1Ti of the storage element to
It is thought that the reaction with S2 generates trace amounts of H and S gases, which adhere to the aluminum thin film and produce yellow or brown Al2S3. Furthermore, in the case of air with a high dew point, it is thought that the generated Al2S3 reacts with moisture in the air to generate milky white electrically insulating Al(OH)3, which causes an increase in the electrical resistance of the aluminum thin film. It is thought that the Furthermore, the performance of the power storage element itself deteriorates when air with a dew point of 140''C or higher is used.
なお、本実施例では、空気を用いたが、窒素。Note that although air was used in this example, nitrogen was used.
アルゴン等の不活性ガスを用いても、実施例と同様の結
果が得られる。Even if an inert gas such as argon is used, the same results as in the example can be obtained.
発明の効果
以上、本発明に従えば、蓄電素子とＩＣチップ等の電子
部品を一体化して封止する際、あらかじめそれぞれを別
々に封止材料で封止して、あらためて一体化封止する２
段階工程を経ることなく、裸の状態の蓄電素子と裸の電
子部品を１段階で一体化封止することができる。そして
、本発明においては、この一体化工程のガス雰囲気は実
質上水分を含まないので、一体化封止中に、蓄電素子。More than the effects of the invention, according to the present invention, when integrating and sealing a power storage element and an electronic component such as an IC chip, each of them is sealed separately with a sealing material in advance, and then integrated and sealed again.
A bare electricity storage element and a bare electronic component can be integrated and sealed in one step without going through step-by-step processes. In the present invention, since the gas atmosphere in this integration step does not substantially contain moisture, the power storage element is removed during the integration sealing.
電子部品が変質して性能が劣化することはない。Electronic components will not change in quality and performance will not deteriorate.
Claims (1)
機器を構成する封止材料で封止していない裸の状態の電
子部品とを、実質的に水分が除かれた空気あるいは不活
性ガス雰囲気中で封止材料により一体となるように封止
することを特徴とする蓄電素子を一体化した電子機器の
製造法。A bare electricity storage element that is not sealed with a sealing material and a bare electronic component that is not sealed with a sealing material that constitutes an electronic device are placed in air from which moisture has been substantially removed or A method for manufacturing an electronic device integrating a power storage element, characterized in that the electronic device is sealed integrally with a sealing material in an inert gas atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150615A JPS63314757A (en) | 1987-06-17 | 1987-06-17 | Manufacture of electronic equipment integrated with condensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62150615A JPS63314757A (en) | 1987-06-17 | 1987-06-17 | Manufacture of electronic equipment integrated with condensing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63314757A true JPS63314757A (en) | 1988-12-22 |
Family
ID=15500748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62150615A Pending JPS63314757A (en) | 1987-06-17 | 1987-06-17 | Manufacture of electronic equipment integrated with condensing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63314757A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5740859A (en) * | 1980-08-25 | 1982-03-06 | Seiko Instr & Electronics Ltd | Manufacture of non-aqueous-electrolyte battery |
| JPS5769721A (en) * | 1980-10-17 | 1982-04-28 | Nippon Electric Co | Electronic element and method of producing same |
| JPS61294754A (en) * | 1985-06-24 | 1986-12-25 | Matsushita Electric Ind Co Ltd | Sealed storage battery |
-
1987
- 1987-06-17 JP JP62150615A patent/JPS63314757A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5740859A (en) * | 1980-08-25 | 1982-03-06 | Seiko Instr & Electronics Ltd | Manufacture of non-aqueous-electrolyte battery |
| JPS5769721A (en) * | 1980-10-17 | 1982-04-28 | Nippon Electric Co | Electronic element and method of producing same |
| JPS61294754A (en) * | 1985-06-24 | 1986-12-25 | Matsushita Electric Ind Co Ltd | Sealed storage battery |
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