JPS6331468A - Load sharing state monitor for a plurality of elements - Google Patents
Load sharing state monitor for a plurality of elementsInfo
- Publication number
- JPS6331468A JPS6331468A JP17436586A JP17436586A JPS6331468A JP S6331468 A JPS6331468 A JP S6331468A JP 17436586 A JP17436586 A JP 17436586A JP 17436586 A JP17436586 A JP 17436586A JP S6331468 A JPS6331468 A JP S6331468A
- Authority
- JP
- Japan
- Prior art keywords
- elements
- signal
- temperature
- abnormal
- load sharing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002159 abnormal effect Effects 0.000 claims abstract description 15
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 10
- 238000012806 monitoring device Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 101100385969 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYC8 gene Proteins 0.000 abstract 1
- 230000005856 abnormality Effects 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
Landscapes
- Power Conversion In General (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、複数の素子の負荷分担状態監視装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a load sharing state monitoring device for a plurality of elements.
（従来の技術）
水力発電のｌｂ制御制御転回連するサイリスタ励磁装置
や周波数変換器などにおいては、高電圧・大電流形のサ
イリスタあるいはパワートランジスタ等の半導体電力素
子の複数を直列又は並列に接続して使用している。それ
らの素子は接続当初には各素子による電圧・電流の分担
が平等になるように調整可能である。しかしながら、当
初各素子による分担が平等となるようにしても、長時間
にわたる運転により素子が劣化し、さらに外部から加え
られる電気的・機械的ストレス等により前記素子が劣化
し、そのような劣化により破壊されるのが避けられない
。しかも、複数の素子中の少なくとも１つの劣化が進む
と、前記分担における平等状態が崩れ、その素子の劣化
がざらに促進される。(Prior art) In thyristor excitation devices, frequency converters, etc. that are connected to lb control control rotation in hydroelectric power generation, a plurality of semiconductor power devices such as high voltage/large current type thyristors or power transistors are connected in series or parallel. I am using it. At the beginning of connection, these elements can be adjusted so that voltage and current are equally shared by each element. However, even if each element is initially made to share equally, the elements deteriorate due to long-term operation, and furthermore, the elements deteriorate due to electrical and mechanical stress applied from the outside, and such deterioration causes Destruction is inevitable. Furthermore, as the deterioration of at least one of the plurality of elements progresses, the equality in the sharing collapses, and the deterioration of that element is accelerated.
少なくとも１つの素子劣化が極麿に進むと、それが＠置
全体に悪影響を及ぼすのが避けられない。If the deterioration of at least one element progresses to the extreme, it is inevitable that it will have a negative effect on the entire device.
〈発明が解決しようとする問題点）
前記各素子が異常な状態にあるか否かを判断するために
は、各素子の分担電圧・分担電流を知得する必要がある
。そのためには、それらの電圧・電流を直接電圧・電流
として計測すればよい。しかしながら、それらの電圧・
電流は共に大きな値のものであるため、計測機器が大形
で高価なものとなるのが避けられない。電圧・電流は、
それらに応じた値を示す他の物理量から間接的に検出で
きる。そのような間接的な検出器として電圧・電流に応
じた値を示す温度に着目した温度ヒユーズ等の温度検出
器があったが、その温度検出器には、周囲温度の影響を
受けるという問題点及び検出温度の誤差が大きいという
問題点等の各種の問題点があった。また、温度検出器と
してバイメタル、サーモスタット及び測温抵抗体等によ
る温度継電器もあるが、その継電器も温度検出点が固定
されており、そのため周囲温度の影響を受けや寸く、精
度の良い温度検出が行えないという問題点があった。(Problems to be Solved by the Invention) In order to determine whether or not each element is in an abnormal state, it is necessary to know the shared voltage and shared current of each element. To do this, those voltages and currents can be directly measured as voltages and currents. However, those voltages
Since both currents have large values, it is inevitable that the measuring equipment will be large and expensive. The voltage and current are
They can be detected indirectly from other physical quantities that show values corresponding to them. As such indirect detectors, there are temperature detectors such as temperature fuses that focus on the temperature that indicates a value corresponding to voltage and current, but these temperature detectors have the problem of being affected by the ambient temperature. There were various problems such as a large error in the detected temperature. In addition, there are temperature relays that use bimetals, thermostats, and resistance temperature sensors as temperature detectors, but these relays also have a fixed temperature detection point, so they are not affected by the ambient temperature, allowing for highly accurate temperature detection. The problem was that it could not be done.
本発明の目的は、複数の素子の負荷分担状態を簡単且つ
高精度に監視する装置を提供することにある。An object of the present invention is to provide a device that easily and accurately monitors the load sharing status of a plurality of elements.
（問題点を解決するための手段）
本発明の負荷分担状ｇ３監視装置は、負荷分担する複数
の素子のそれぞれの温度をそれらの素子からの熱放射に
基づいて検出づる温度センサーと、それらの温度センサ
ーでの検出信号に基づいて基準信号を生成する基準信号
生成手段と、前記各検出信号と前記基準信号とを比較し
てその比較結果に基づいて異常信Ｙ５を選択的に出力す
る比較手段とを備えたものとして構成される。(Means for Solving the Problems) The load sharing assignment g3 monitoring device of the present invention includes a temperature sensor that detects the temperature of each of a plurality of load sharing elements based on heat radiation from those elements, a reference signal generation means for generating a reference signal based on a detection signal from the temperature sensor; and a comparison means for comparing each detection signal with the reference signal and selectively outputting an abnormality signal Y5 based on the comparison result. It is configured as having the following.
（作 用）
負荷分担する複数の素子のそれぞれの渇痘が温度センサ
ーによって離れた位置から検出される。(Function) The thirst of each of the multiple elements that share the load is detected from a remote location by a temperature sensor.
それらの検出信号に基づいて基準信号が基準信号生成手
段によって生成される。そのＳｉ準倍信号前記温度セン
サーでの複数の検出信号とそれぞれ個別に比較され、比
較結果が異常な場合、例えば、比較した信号同士の差が
予め定めた設定値よりも大きいときには、比較手段から
異常信号が出力される。A reference signal is generated by the reference signal generation means based on these detection signals. The Si semi-multiple signal is individually compared with a plurality of detection signals from the temperature sensor, and if the comparison result is abnormal, for example, when the difference between the compared signals is larger than a predetermined set value, the comparison means An abnormal signal is output.
（実施例）
第１図は、本発明の第１実施例の監視装置を丞すブロッ
ク図である。同図において、１，１．・・・は温度計測
対象としてのサイリスタ等の電力半導体素子を示す。２
，２．・・・は半導体素子１，１゜・・・の温度を計測
するための温度センサーであり、半導体素子１，１．・
・・と同数だけ設けられている。(Embodiment) FIG. 1 is a block diagram showing a monitoring device according to a first embodiment of the present invention. In the figure, 1, 1. ... indicates a power semiconductor element such as a thyristor as a temperature measurement target. 2
,2. . . is a temperature sensor for measuring the temperature of the semiconductor elements 1, 1° . . .・
There are the same number of...
温度センサー２としては、半導体素子からの熱放射をそ
の放射量に応じた電気信号に変換する各種の素子、例え
ば、赤外線ピンｌナーを用いることができる。温度セン
トナー２．２．・・・の次段には温度補正回路３，３．
・・・及びＡ／Ｄ変換器４，４．・・・を介してデジタ
ル計算機５が接続されている。温度補正回路３は、温度
セン’、ｉ−２からの出力を補正して、温度センサー２
からの出力を温度に対してリニアとするためのもので、
温度センサー２の特性曲線を修正すると共にセンサー個
々の特性のばらつきを修正する。デジタル計１３＊５は
以下のように基準信号生成手段と比較手段を備えたしの
として機能する。即ち、Ａ／Ｄ変換器４，４．・・・か
らの出力に基づいて一定時間毎の各時刻においてそれら
の全出力の平均値及び標準偏差（標準信号〉を求める。As the temperature sensor 2, various types of elements that convert heat radiation from a semiconductor element into an electrical signal according to the amount of radiation, such as an infrared pinner, can be used. Temperature Centner 2.2. The next stage is a temperature correction circuit 3, 3 .
... and A/D converters 4, 4 . A digital computer 5 is connected via... The temperature correction circuit 3 corrects the output from the temperature sensor ', i-2, and outputs the temperature sensor 2.
This is to make the output linear with respect to temperature.
The characteristic curve of the temperature sensor 2 is corrected, and variations in the characteristics of individual sensors are corrected. The digital meter 13*5 functions as a device equipped with a reference signal generating means and a comparing means as described below. That is, A/D converters 4, 4 . Based on the outputs from ..., the average value and standard deviation (standard signal) of all outputs are determined at each fixed time interval.
各Ａ／Ｄ変換器４，４．・・・がらの個別の出力と平均
値との偏差を求める。それらの各偏差と標準偏差とを比
較する。その比較の結果、前者の信号のうちの１つにで
も後者の信りよりも標準偏差に定数（例えば１／４）を
掛けた設定値以上に大きいものがある場合には異常信号
を出力する。Ａ／Ｄ変換器４．４．・・・がら時間的に
連続してデジタル計算機５に入力される信号を、一定時
間毎に平均し、それらの平均信号に基づいて以上に述べ
たような信号処理を行うこともできる。Each A/D converter 4, 4. ...Find the deviation between the individual outputs and the average value. Compare each of those deviations with the standard deviation. As a result of the comparison, if even one of the former signals is larger than the latter by a set value that is the standard deviation multiplied by a constant (for example, 1/4), an abnormal signal is output. . A/D converter 4.4. It is also possible to average the signals that are continuously input to the digital computer 5 at regular time intervals, and perform the above-described signal processing based on the averaged signals.
また、デジタル計算機５に以下の改能を持たせることも
できる。即ち、Ａ／Ｄ変換器４，４．・・・からの出力
に基づいて一定時間毎の各時刻においてそれらの全出力
の平均値〈標準信号）を求める。Further, the digital computer 5 can also be provided with the following improvements. That is, A/D converters 4, 4 . Based on the outputs from ..., the average value (standard signal) of all the outputs is determined at each fixed time interval.
各Ａ／Ｄ変換器４，４．・・・がらの個別の出力とその
平均値とを比較する。その比較の結果、前老の信号のう
ちの１つにでも後者の信号よりも予め定めた設定値より
も大きい場合には異常信号を出力する。さらに、デジタ
ル計算機５に以下の灘能を持たせることができる。即ち
、各Ａ／Ｄ変換７Ａ４゜４、・・・からの個別の出力と
前に述べた２種類の設定値と比較してそれらの差信号を
求める。それらの差信号を時間で微分する。その微分し
た値が予め定めた値又は標準偏差から求めた値よりも大
きい場合に異常信号を出力づる。Each A/D converter 4, 4. ... Compare the individual outputs of the shells and their average values. As a result of the comparison, if even one of the former signals is larger than the latter signal by a predetermined set value, an abnormal signal is output. Furthermore, the digital computer 5 can have the following functions. That is, the individual outputs from each A/D converter 7A4, 4, . Differentiate those difference signals with respect to time. If the differentiated value is larger than a predetermined value or a value determined from the standard deviation, an abnormal signal is output.
以上に述べた異常信号には２種類のものがあり、１つは
半導体素子１，１．・・・のいずれかが異常状態にある
ことを示す警報信号６であり、他はどの半導体素子１，
１．・・・が異常状態にあるかを示す個別異常信号７．
７．・・・である。警報信号６は個別異常信号７，７．
・・・の論理和として得られる。There are two types of abnormal signals described above; one is for semiconductor elements 1, 1. . . is an alarm signal 6 indicating that one of them is in an abnormal state, and the other semiconductor elements 1,
1. An individual abnormality signal indicating whether . . . is in an abnormal state 7.
7. ...is... The alarm signal 6 is the individual abnormality signal 7, 7 .
It is obtained as the logical sum of...
個別異常信号７，７．・・・は次段のＣＲＴ８に伝えら
れ、そのＣＲＴ８にどの半導体素子１，１．・・・に異
常があるかが表示される。Individual abnormality signal 7, 7. . . is transmitted to the next stage CRT 8, and the CRT 8 is informed as to which semiconductor element 1, 1 . ...Displays whether there is an abnormality.
第２図は、本発明の第２実施例の監視装置を示すブロッ
ク図である。同図において、１１，１１゜・・・は、第
１実施例の場合と同様に、計測対象としての半導体素子
を示す。１２．１２．・・・は第１実施例と同様の温度
センサーであり、それらの次段にはアナログスイッチ（
アナログマルチブレクリ）１３及びＡ／Ｄ変換器１４を
介してデジタル計算機１５が接続されている。アナログ
スイッチー１３は計算礪１５からの制御信号によって高
速で切換えられ、温度センサー１２．１２．・・・から
の出力信号を時間的に直列に順次ひとつずつＡ／Ｄ変換
器１４に送る。温度セン＋ｔ−１２，１２，・・・から
の出力信号はＡ／Ｄ変換器１４でデジタル信号に変換さ
れた後デジタル計算機１５に送られ、それらの信号は、
その計算１１１１５内で、第１実論例において温度補正
回路３，３．・・・で行われたのと同様に補正される。FIG. 2 is a block diagram showing a monitoring device according to a second embodiment of the present invention. In the figure, 11, 11°, . . . indicate semiconductor elements as measurement targets, as in the first embodiment. 12.12. . . . are temperature sensors similar to those in the first embodiment, and the next stage is an analog switch (
A digital computer 15 is connected via an analog multiplex converter 13 and an A/D converter 14. The analog switches 13 are switched at high speed by control signals from the calculator 15, and the temperature sensors 12.12. . . . are sent to the A/D converter 14 one by one sequentially in time series. The output signals from the temperature sensors +t-12, 12, . . . are converted into digital signals by the A/D converter 14 and then sent to the digital computer 15, and these signals are
In the calculation 11115, in the first practical example, temperature correction circuits 3, 3 . The correction will be made in the same way as in...
それらの補正後の信号は、その後第１実施例の場合と同
様に処理され、異帛信号１６が出力されると共に個別異
常信号１７．１７゜・・・が出力され、ＣＲＴ１８にど
の半導体素子１１．１１、・・・が異常であるかが表示
される。These corrected signals are then processed in the same manner as in the first embodiment, and an abnormality signal 16 is output, as well as individual abnormality signals 17, 17°, etc. .11, . . . are abnormal or not.
上述の本発明の実施例の監視装置には以Ｆの効果が得ら
れる。即ち、複数の半導体素子１，１１によって行われ
る負荷の分担状態を、それらの素子１．１１が発する熱
によって検出できる。このように、その検出は、半導体
素子１．ｉｉ、に加わる高電圧・大電流を直接側るもの
ではないため、各種の利点、例えば、絶縁耐圧、感電又
はノイズ等に対して特別の考慮を必要としない等の利点
がある。湿度センサー２．１２からの出力を補正機能を
もつ温度補正回路３（第１実施例）又はデジタル計算機
１５（第２実施例）で補正するようにしたので、各温度
センサ−２，１２自体の特性のばらつきや温度センサー
２．１２の電力半導体素子１．１１に対する配置位置の
ばらつきの影響等を受けにくく、精度の高い温度検出が
可能である。The monitoring device according to the embodiment of the present invention described above has the following effects. That is, the state of load sharing carried out by the plurality of semiconductor elements 1, 11 can be detected by the heat generated by these elements 1, 11. In this way, the detection is performed by the semiconductor device 1. Since it is not directly exposed to the high voltage and large current applied to (ii), it has various advantages, such as not requiring special consideration for dielectric strength, electric shock, noise, etc. Since the output from the humidity sensor 2.12 is corrected by the temperature correction circuit 3 (first embodiment) or digital computer 15 (second embodiment) having a correction function, each temperature sensor 2, 12 itself It is less susceptible to the effects of variations in characteristics and variations in the arrangement position of the temperature sensor 2.12 with respect to the power semiconductor element 1.11, and can perform highly accurate temperature detection.
さらに、各温度センサー２．１２での検出値を比較して
、異常状態にあるか否かを検出するに際し、それらの検
出値を前記の如く補正すると共に比較すべき基準信号と
してそれらの補正後の信号の標Ｑ偏差（又は平均値）を
用いるようにしたので、周囲温度の影響を受けることな
く、安定的に異常か否かを検出できる。これにより、長
期間にわたって緩やかに行われる検出しにくい半導体素
子１゜１１の劣化状態を的確に検出でき、それらの素子
１．１１の劣化の進み具合を故障とは無関係に故障に至
る前に検出できる。よって、故障する可能性のある半導
体素子を事前に検出でき、それらの半導体素子を使用し
たシステム全体としての信頼性及び稼動率を向上させる
ことができる。Furthermore, when comparing the detected values of each temperature sensor 2.12 to detect whether or not an abnormal state exists, the detected values are corrected as described above, and the corrected values are used as a reference signal to be compared. Since the standard Q deviation (or average value) of the signal is used, it is possible to stably detect whether or not there is an abnormality without being affected by the ambient temperature. As a result, it is possible to accurately detect the state of deterioration of semiconductor elements 1.11 that is difficult to detect, which occurs gradually over a long period of time, and the progress of deterioration of these elements 1.11 can be detected before a failure occurs, regardless of the failure. can. Therefore, semiconductor elements that are likely to fail can be detected in advance, and the reliability and operation rate of the entire system using these semiconductor elements can be improved.
このように本発明の監視装置によれば、複数の素子の負
荷分担状態をそれが正常な状態にあるか否かを簡単且つ
高精度に検出することができる。As described above, according to the monitoring device of the present invention, it is possible to easily and highly accurately detect whether or not the load sharing state of a plurality of elements is in a normal state.
第１図は本発明の第１実施例の監視装置を示づブロック
図、第２図は本発明の第２実施例の監視装置を示すブロ
ック図である。
１．１１・・・半導体素子、２．１２・・・渇瓜ロン會
ナー、３・・・温度補正回路、４．１４・・・Ａ／Ｄ変
１１Ｊ！器、５．１５・・・デジタル計算機、６．１６
・・・警報信号、７．１７・・・個別異常信号、８，１
８・・−ＣＲＴ、１３・・・アナログスイッチ。FIG. 1 is a block diagram showing a monitoring device according to a first embodiment of the invention, and FIG. 2 is a block diagram showing a monitoring device according to a second embodiment of the invention. 1.11...Semiconductor element, 2.12...Drinking device, 3...Temperature correction circuit, 4.14...A/D change 11J! Equipment, 5.15...Digital computer, 6.16
...Alarm signal, 7.17...Individual abnormality signal, 8,1
8...-CRT, 13... Analog switch.
Claims (1)
子からの熱放射に基づいて検出する温度センサーと、そ
れらの温度センサーでの検出信号に基づいて基準信号を
生成する基準信号生成手段と、前記各検出信号と前記基
準信号とを比較してその比較結果に基づいて異常信号を
選択的に出力する比較手段とを備えたことを特徴とする
複数の素子の負荷分担状態監視装置。a temperature sensor that detects the temperature of each of a plurality of elements that share a load based on heat radiation from those elements; a reference signal generating means that generates a reference signal based on detection signals from the temperature sensors; 1. A load sharing state monitoring device for a plurality of elements, characterized in that the apparatus comprises a comparing means for comparing each detection signal with the reference signal and selectively outputting an abnormal signal based on the comparison result.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17436586A JPH07123348B2 (en) | 1986-07-24 | 1986-07-24 | Load sharing status monitor for multiple devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17436586A JPH07123348B2 (en) | 1986-07-24 | 1986-07-24 | Load sharing status monitor for multiple devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6331468A true JPS6331468A (en) | 1988-02-10 |
| JPH07123348B2 JPH07123348B2 (en) | 1995-12-25 |
Family
ID=15977343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17436586A Expired - Lifetime JPH07123348B2 (en) | 1986-07-24 | 1986-07-24 | Load sharing status monitor for multiple devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07123348B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213370A (en) * | 1987-02-28 | 1988-09-06 | Nippon Denso Co Ltd | Protective circuit for power transistor |
| JP2015133894A (en) * | 2013-12-11 | 2015-07-23 | 株式会社デンソー | Temperature detection apparatus |
| JP2015159712A (en) * | 2014-02-24 | 2015-09-03 | ザ・ボーイング・カンパニーＴｈｅＢｏｅｉｎｇ Ｃｏｍｐａｎｙ | Thermally balanced parallel operation of transistors |
-
1986
- 1986-07-24 JP JP17436586A patent/JPH07123348B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213370A (en) * | 1987-02-28 | 1988-09-06 | Nippon Denso Co Ltd | Protective circuit for power transistor |
| JP2015133894A (en) * | 2013-12-11 | 2015-07-23 | 株式会社デンソー | Temperature detection apparatus |
| US9903765B2 (en) | 2013-12-11 | 2018-02-27 | Denso Corporation | Apparatus for detecting temperature of semiconductor elements for power conversion |
| JP2015159712A (en) * | 2014-02-24 | 2015-09-03 | ザ・ボーイング・カンパニーＴｈｅＢｏｅｉｎｇ Ｃｏｍｐａｎｙ | Thermally balanced parallel operation of transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07123348B2 (en) | 1995-12-25 |
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