JPS63314402A - Inspection method for mask pattern - Google Patents

Inspection method for mask pattern

Info

Publication number
JPS63314402A
JPS63314402A JP62151601A JP15160187A JPS63314402A JP S63314402 A JPS63314402 A JP S63314402A JP 62151601 A JP62151601 A JP 62151601A JP 15160187 A JP15160187 A JP 15160187A JP S63314402 A JPS63314402 A JP S63314402A
Authority
JP
Japan
Prior art keywords
light
time
mask pattern
spot
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62151601A
Other languages
Japanese (ja)
Inventor
Satoshi Araibara
新井原 聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62151601A priority Critical patent/JPS63314402A/en
Publication of JPS63314402A publication Critical patent/JPS63314402A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To detect and confirm all of a plurality of sizes in a simple arrangement and in a short period of time by comparing the absent time or present time of a passing light with a predetermined time through sweeping of a light spot having smaller width than a fixed width at constant speeds. CONSTITUTION:A light source 4 for generating a light spot 3 is positioned opposite to a light detector 5 which detects the light coming from the light spot 3 and converts the same into signals. A mask pattern is placed between the light source 4 and the light detector 5, so that the mask pattern is irradiated by the slight spot 3 while the light spot is moved in a direction parallel to light shield regions 2 relatively at constant speeds. At this time, the light spot 3 is arranged to be smaller in width than the light shield region 2 of the mask pattern. Then, the light detector 5 detects only the light passing through between the light shield regions 2 and converts the detected light into signals indicating the presence of the passing light. The signals are periodic pulse signals. Therefore, the periodic pulse signals are sent, through a signal discriminator circuit 6, to a comparison circuit 7 in which two among the period, the rest time and the continuous time are compared in every cycle with a reference time generated by a reference setting circuit 8. The result of the comparison is indicated by an acceptance/rejection display circuit 9.

Description

【発明の詳細な説明】 〔概要〕 一定幅の遮光領域が等間隔(等ピッチ)に多数並ぶマス
クパターンの検査において、 上記一定幅より小さな光スポットを一定速度で走査照射
し、透過光有無の時間を所定の時間と比較して、不良の
マスクパターンを検出することにより、 確実な検査を簡便になし得るようにしたものである。
[Detailed Description of the Invention] [Summary] In the inspection of a mask pattern in which a large number of light-shielding areas of a constant width are arranged at regular intervals (equal pitch), a light spot smaller than the above-mentioned constant width is scanned and irradiated at a constant speed, and the presence or absence of transmitted light is detected. By comparing the time with a predetermined time and detecting defective mask patterns, reliable inspection can be easily performed.

〔産業上の利用分野〕[Industrial application field]

本発明は、一定幅の遮光領域が等間隔に多数並ぶマスク
パターンを対象にしたマスクパターンの検査方法に関す
The present invention relates to a method for inspecting a mask pattern, which targets a mask pattern in which a large number of light-shielding areas of a constant width are arranged at equal intervals.

半導体装置などの製造に用いられるホトリソグラフィ技
術では、遮光領域でパターンを形成したマスクパターン
を具えるホトマスクを使用し、そのマスクパターンを基
板に転写して基板を加工している。
2. Description of the Related Art In photolithography technology used in the manufacture of semiconductor devices, a photomask having a mask pattern formed in a light-shielding area is used, and the mask pattern is transferred onto a substrate to process the substrate.

また、このホトマスクのマスクパターンは、電子ビーム
露光などのビームで直接描画して形成するか、または、
同様にして形成したレチクルのマスクパターンを転写し
て形成している。
In addition, the mask pattern of this photomask can be formed by direct drawing with a beam such as electron beam exposure, or
It is formed by transferring a mask pattern of a reticle formed in a similar manner.

従って、ホトマスクやレチクルに創製されたマスフパタ
ーンは、基板加工の元となるので、正確を期するように
確実な検査を行うことが望まれている。
Therefore, since the mask pattern created on the photomask or reticle becomes the basis for substrate processing, it is desirable to perform reliable inspection to ensure accuracy.

そして、マスクパターンの中には、CCD (電荷結合
素子)、IC(集積回路)のメモリ領域、などのための
ものとして、一定幅の遮光領域が等間隔に多数並ぶマス
クパターンがあり、そのマスクパターンにおいても同様
である。
Among the mask patterns, there are mask patterns in which a large number of light-shielding areas of a certain width are lined up at equal intervals for use in memory areas of CCDs (charge-coupled devices), ICs (integrated circuits), etc. The same applies to patterns.

〔従来の技術と発明が解決しようとする問題点〕一定幅
の遮光領域が等間隔に多数並ぶマスクパターンは、例え
ば第3図の平面図に示すが如くである。
[Prior Art and Problems to be Solved by the Invention] A mask pattern in which a large number of light shielding areas of a constant width are arranged at equal intervals is as shown in the plan view of FIG. 3, for example.

同図において、マスクパターンは、ガラス基板1上に、
aなる幅寸法の遮光領域2がbなる間隔(ピッチ)寸法
で等間隔にN個(Nは数百ないし数千)並び、全長寸法
lが ff=b (N−1) +a となり、遮光領域2間の間隙寸法Cが全て等しくなるこ
とを目上して形成されている。
In the figure, the mask pattern is on the glass substrate 1.
N light-shielding regions 2 with a width dimension a are arranged at equal intervals with a pitch dimension b (N is several hundred to several thousand), and the total length l becomes ff = b (N-1) + a, and the light-shielding regions It is formed with the aim of making all the gap dimensions C between the two the same.

そして、幅寸法a、間隔寸法すまたは間隙寸法C1およ
び、全長寸法β、の全てが所定の公差に収まっているこ
とを要求されている。
The width dimension a, the interval dimension C1, and the overall length dimension β are all required to fall within predetermined tolerances.

従って、このマスクパターンの良否を確実に検査するに
は、上記寸法の全てを測定する必要がある。
Therefore, in order to reliably inspect the quality of this mask pattern, it is necessary to measure all of the above dimensions.

従来は、このような寸法の検査は、顕微鏡を用いた寸法
測定によっている。
Conventionally, such dimensional inspection has been carried out by measuring dimensions using a microscope.

このため、上記のマスクパターンのヰ★査では、測定個
所が多く測定時間が膨大なものになっている。
For this reason, in the above-mentioned mask pattern inspection, there are many measurement points and the measurement time is extremely long.

そこで、幅寸法aおよび間隔寸法b(間隙寸法C)の測
定を抜取測定にして、測定個所の寸法が良ければ確率的
にみて良しとする簡略方法を採用する場合があるが、こ
の簡略方法は、確実な検査となり得ない。
Therefore, a simplified method is sometimes adopted in which the width dimension a and the interval dimension b (gap dimension C) are measured by sampling, and if the dimensions of the measurement location are good, it is considered to be good from a probabilistic perspective. , cannot be a reliable test.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は、一定幅の遮光領域が等間隔に多数並ぶマ
スクパターンに、上記一定幅より小さな光スポットを上
記並びの方向に一定速度で相対的に移動させながら照射
し、その透過光を検知して透過光の有無を示す信号とな
し、その信号の周期、休止時間、継続時間の中の何れか
二つを所定の時間と比較して、不良のマスクパターンを
検出する本発明の検査方法によって解決される。
The above problem is solved by irradiating a mask pattern with a large number of light-shielding areas of a certain width arranged at equal intervals with a light spot smaller than the certain width while moving relatively at a constant speed in the direction of the arrangement, and detecting the transmitted light. The inspection method of the present invention detects a defective mask pattern by comparing any two of the period, pause time, and duration of the signal with a predetermined time. solved by.

〔作用〕[Effect]

上記信号の個々の周期は、多数並ぶ遮光領域の個々の間
隔に比例し、その間隔の変化に応じて変化する。そして
、上記休止時間を透過光の無しとすれば、個々の休止時
間は個々の遮光領域の幅の変化に応じて変化し、個々の
上記継続時間は遮光領域間の個々の間隙の変化に応じて
変化する。
The individual cycles of the above-mentioned signals are proportional to the individual intervals of a large number of light-shielding regions, and change according to changes in the intervals. Then, if the above rest time is assumed to be no transmitted light, each rest time changes according to the change in the width of each light-shielding area, and each of the above-mentioned duration times changes according to the change in the individual gaps between the light-shielding areas. and change.

このことから、本発明方法を採用すれば、遮光領域の幅
に対する休止時間(または、遮光領域間の間隙に対する
継続時間)を予め求めておくことにより、遮光領域の幅
、遮光領域の間隔または遮光領域間の間隙(第3図図示
の幅寸法a2間隔寸法すまたは間隙寸法C)の全てに関
する良否の判定を、従来方法の場合より極めて簡便に短
時間で行うことが可能になり、当該検査を確実に且つ簡
便なものにすることが出来る。
Therefore, if the method of the present invention is adopted, the width of the shaded areas, the interval between the shaded areas, or the shading time can be determined in advance by determining the pause time for the width of the shaded areas (or the duration for the gap between the shaded areas). It is now possible to judge the quality of all gaps between regions (width dimension a2 interval dimension or gap dimension C shown in Figure 3) much more easily and in a shorter time than in the case of the conventional method. It can be done reliably and easily.

〔実施例〕〔Example〕

以下本発明方法の実施例について第1図の構成図および
第2図の波形図を用いて説明する。
Examples of the method of the present invention will be described below with reference to the configuration diagram in FIG. 1 and the waveform diagram in FIG. 2.

第1図において、光スポット3を出射する光源4と光ス
ポット3になった光を検知して信号に変換する光検知器
5とを対向させて、両者の間に第3図で説明したマスク
パターンを通し、光スポット3が遮光領域2の並びの方
向に相対的に一定速度で移動しながらマスクパターンを
照射するようにする。またその際、光スポット3の大き
さは、マスクパターンの遮光領域20幅より小さくなる
ようにする。
In FIG. 1, a light source 4 that emits a light spot 3 and a photodetector 5 that detects the light that becomes the light spot 3 and converts it into a signal are placed facing each other, and a mask as described in FIG. 3 is placed between them. The light spot 3 is caused to irradiate the mask pattern while moving at a relatively constant speed in the direction in which the light shielding areas 2 are lined up through the pattern. Further, at that time, the size of the light spot 3 is made smaller than the width of the light shielding area 20 of the mask pattern.

ここでは、遮光領域2の幅寸法aが5μm、遮光領域2
の間隔寸法すが10μm(従って、遮光領域2間の間隙
寸法Cが5μm)であるマスクパターンに対し、光スポ
ットの大きさは4μmφであリ、また上記の移動速度は
0.5〜21璽/秒である。
Here, the width dimension a of the light-shielding region 2 is 5 μm, and the light-shielding region 2
For a mask pattern with an interval dimension of 10 μm (therefore, a gap dimension C between the light-shielding regions 2 of 5 μm), the size of the light spot is 4 μmφ, and the above-mentioned moving speed is 0.5 to 21 cm. /second.

さすれば、光検知器5は、遮光領域2間を通過した透過
光のみを検知し、その信号は、透過光有りがパルスとな
って第2図に示すような周期パルス信号となる。
Then, the photodetector 5 detects only the transmitted light that has passed between the light shielding areas 2, and the signal becomes a pulse when the transmitted light is present, and becomes a periodic pulse signal as shown in FIG.

そしてこの信号は、判別回路6を経て比較回路7に入り
、各周期毎に、周期、休止時間、および継続時間の中の
二つが基準設定回路8からの基準時間と比較され、その
結果が良否判定となって良否表示回路9によって表示さ
れる。
Then, this signal passes through the discrimination circuit 6 and enters the comparison circuit 7, and for each cycle, two of the period, rest time, and duration are compared with the reference time from the reference setting circuit 8, and the result is determined as good or bad. A judgment is made and displayed by the pass/fail display circuit 9.

判別回路6は、第2図図示の信号を2値化レベル10(
鎖線で示す)で2値化判別して、各周期毎に、周期B、
休止時間A、および継続時間Cの中の二つを求める。さ
すれば、個々の休止時間A、個々の周期B、および個々
の継続時間Cは、それぞれ遮光領域2の個々の幅寸法a
、個々の間隔寸法b、および遮光領域2間の個々の間隙
寸法Cに対応し、次の関係が成立する。
The discrimination circuit 6 converts the signal shown in FIG.
(shown by a chain line), and for each period, period B,
Two of the pause time A and the duration C are determined. Then, the individual pause times A, the individual periods B, and the individual durations C each correspond to the individual width dimensions a of the light shielding area 2.
, the individual gap dimensions b, and the individual gap dimensions C between the light-shielding regions 2, and the following relationship holds true.

a=k(A+α) Δa=k (ΔA) c=k(C−α) Δc=k  (ΔC) b=a+c=k  (A+C)  =に、BΔb=k 
 (ΔB) 但し、 kは上記移動速度により定まる比例定数αは2値化レベ
ル10のレベルで定まる定数このことから、上記移動速
度、および幅寸法aに対する休止時間A(または間隙寸
法Cに対する継続時間)を測定して比例定数におよび定
数αを予め求めておけば、休止時間A1周期B、および
継続時間Cの中の二つを各周期毎に求めることにより、
個々の幅寸法a、個々の間隔寸法b、および個々の間隙
寸法Cの全てを求めることが可能になる。。
a=k(A+α) Δa=k (ΔA) c=k(C-α) Δc=k (ΔC) b=a+c=k (A+C) =, BΔb=k
(ΔB) However, k is a proportionality constant determined by the above-mentioned moving speed, and α is a constant determined by the level of binarization level 10. Therefore, the above-mentioned moving speed and pause time A for width dimension a (or duration time for gap dimension C) ) by measuring the proportionality constant and the constant α, then by finding two of the pause time A, period B, and duration C for each period,
It becomes possible to determine all of the individual width dimensions a, the individual spacing dimensions b, and the individual gap dimensions C. .

従って、休止時間A、周期B、および継続時間Cの中の
二つに対して比較により良否を判定する基準時間を基準
時間設定回路8に設定することにより、幅寸法a、間隔
寸法すまたは間隙寸法Cの中に存在する不良寸法を検出
して、不良のマスクパターンを検出することが出来る。
Therefore, by setting the reference time in the reference time setting circuit 8 for determining the quality by comparing two of the rest time A, the period B, and the duration time C, the width dimension a, the interval dimension or the gap can be set. A defective mask pattern can be detected by detecting a defective dimension existing within the dimension C.

然も、その検出は、マスクパターンが光源4と光検知器
5の間を通過する間になされる。
However, the detection is performed while the mask pattern passes between the light source 4 and the photodetector 5.

そして、マスクパターンの全長寸法lの検査を上記の検
査に加えることにより、検査は確実なものとなる。全長
寸法βの検査は、従来の方法で行っても短時間で済むも
のである。
By adding the inspection of the total length l of the mask pattern to the above inspection, the inspection becomes reliable. Even if the inspection of the total length dimension β is performed using a conventional method, it only takes a short time.

か(して、一定幅の遮光領域が等間隔に多数並ぶマスク
パターンに対する確実な検査、即ち多数の寸法の全てを
確認する検査が、従来方法の場合より簡便に且つ短時間
で行うことが出来る。
(Thus, reliable inspection of a mask pattern in which a large number of light-shielding areas of a certain width are lined up at equal intervals, that is, an inspection that confirms all of the numerous dimensions, can be performed more easily and in a shorter time than with conventional methods. .

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明の構成によれば、一定幅の遮
光領域が等間隔に多数並ぶマスクパターンの検査におい
て、多数の寸法の全てを確認する確実な検査を簡便に且
つ短時間でなし得るようにさせる効果がある。
As explained above, according to the configuration of the present invention, when inspecting a mask pattern in which a large number of light-shielding areas of a constant width are arranged at equal intervals, reliable inspection that confirms all of a large number of dimensions can be carried out easily and in a short time. It has the effect of making you do so.

【図面の簡単な説明】 第1図は本発明方法の実施例を説明する構成図、第2図
は実施例における信号の波形図、第3図はマスクパター
ンの例を示す平面図、である。 図において、 ■はガラス基板、   2は遮光領域、3は光スポット
、    4は光源、 5は光検知器、     6は判別回路、7は比較回路
、    8は基準設定回路、9は良否表示回路、  
10は2値化レベル、aは幅寸法、      bは間
隔寸法、Cは間隙寸法、    βは全長寸法、Aは休
止時間、    Bは周期、 Cは継続時間、 である。 本溶明方法の実姉例を説明するML成団第   1  
 図 一一→時間 実すた脅りにあ゛けるイ芭号の7皮形図第  2   
図 マス/7パターンf)471’J吃示す平面国策  3
  図
[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a block diagram illustrating an embodiment of the method of the present invention, Fig. 2 is a waveform diagram of a signal in the embodiment, and Fig. 3 is a plan view showing an example of a mask pattern. . In the figure, ■ is a glass substrate, 2 is a light shielding area, 3 is a light spot, 4 is a light source, 5 is a photodetector, 6 is a discrimination circuit, 7 is a comparison circuit, 8 is a reference setting circuit, 9 is a pass/fail display circuit,
10 is the binarization level, a is the width dimension, b is the interval dimension, C is the gap dimension, β is the total length dimension, A is the pause time, B is the period, and C is the duration time. ML Seidan No. 1 explaining a sister example of the present melting method
Figure 11 → 7 skin shapes of Iba No. 2 in response to the threat of the end of time
Figure square/7 pattern f) 471'J flat national policy 3
figure

Claims (1)

【特許請求の範囲】[Claims] 一定幅の遮光領域が等間隔に多数並ぶマスクパターンを
検査する方法において、上記一定幅より小さな光スポッ
トを上記並びの方向に一定速度で相対的に移動させなが
ら上記マスクパターンに照射し、その透過光を検知して
透過光の有無を示す信号となし、その信号の周期、休止
時間、継続時間の中の何れか二つを所定の時間と比較し
て、不良のマスクパターンを検出することを特徴とする
マスクパターンの検査方法。
In a method for inspecting a mask pattern in which a large number of light-shielding areas of a certain width are arranged at equal intervals, a light spot smaller than the certain width is irradiated onto the mask pattern while moving relatively at a constant speed in the direction of the arrangement, and its transmission is It detects light and generates a signal indicating the presence or absence of transmitted light, and compares any two of the period, rest time, and duration of the signal with a predetermined time to detect a defective mask pattern. Featured mask pattern inspection method.
JP62151601A 1987-06-18 1987-06-18 Inspection method for mask pattern Pending JPS63314402A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62151601A JPS63314402A (en) 1987-06-18 1987-06-18 Inspection method for mask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62151601A JPS63314402A (en) 1987-06-18 1987-06-18 Inspection method for mask pattern

Publications (1)

Publication Number Publication Date
JPS63314402A true JPS63314402A (en) 1988-12-22

Family

ID=15522094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62151601A Pending JPS63314402A (en) 1987-06-18 1987-06-18 Inspection method for mask pattern

Country Status (1)

Country Link
JP (1) JPS63314402A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567603A (en) * 1978-11-15 1980-05-21 Fujitsu Ltd Pattern inspection method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567603A (en) * 1978-11-15 1980-05-21 Fujitsu Ltd Pattern inspection method

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