JPS6330718B2 - - Google Patents
Info
- Publication number
- JPS6330718B2 JPS6330718B2 JP56136661A JP13666181A JPS6330718B2 JP S6330718 B2 JPS6330718 B2 JP S6330718B2 JP 56136661 A JP56136661 A JP 56136661A JP 13666181 A JP13666181 A JP 13666181A JP S6330718 B2 JPS6330718 B2 JP S6330718B2
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- odd
- magnetic
- detection
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 2
- 241000047703 Nonion Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
Description
【発明の詳細な説明】
本発明は磁気バブルの検出を転送バブルと同期
させた磁気バブルメモリデバイスの駆動方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for driving a magnetic bubble memory device in which detection of magnetic bubbles is synchronized with transfer bubbles.
磁気バブルメモリの回路構成としてメジヤ・マ
イナループ方式をとり磁気バブル(以下バブル)
情報を奇数列と隅数列とに分けて高速処理するオ
ツド・イーブン構成(以下Odd−Even)が良く
用いられている。 The circuit configuration of magnetic bubble memory uses the major/minor loop method, and magnetic bubbles (hereinafter referred to as bubbles) are used.
An odd-even configuration (hereinafter referred to as "odd-even") is often used, which processes information at high speed by dividing it into odd number sequences and corner number sequences.
第1図はOdd−Even構成をとるデバイスの構
成図でかゝる構成をとることによりバブル情報の
書き込みおよび読み出し速度が早められる。 FIG. 1 is a block diagram of a device having an odd-even configuration. By adopting such a configuration, the writing and reading speed of bubble information is increased.
すなわちバブル情報を奇数列(Odd)と隅数列
(Even)とに分け、この各がデバイスの中で奇数
列のバブル情報を扱う奇数ブロツクと隅数列を扱
う隅数ブロツクで処理されるもので、各ブロツク
がバブル発生器および検出器をもつている。 In other words, the bubble information is divided into an odd number sequence (Odd) and a corner number sequence (Even), and each of these is processed in the device by an odd number block that handles the bubble information of the odd number sequence and a corner number block that handles the corner number sequence. Each block has a bubble generator and detector.
今第1図において左側のブロツクを奇数ブロ
ツク、右側のブロツクを隅数ブロツクとすると
発生器1と2において電気信号をバブル信号に変
換された同一構成のバブル信号はそれぞれのブロ
ツクのメジヤライン3と4を伝播して各ブロツク
のマイナループ群5,6に対向する書き込み位置
7,8に整列する。 Now, in Fig. 1, if the blocks on the left are odd-numbered blocks and the blocks on the right are corner-numbered blocks, then the bubble signals of the same configuration, in which the electric signals are converted into bubble signals in generators 1 and 2, are generated on the major lines 3 and 4 of the respective blocks. are propagated and aligned at write positions 7 and 8 opposite to the minor loop groups 5 and 6 of each block.
こゝでメジヤライン3,4を構成する転送路の
ビツト数は奇数ブロツクと隅数ブロツクとは
1ビツト違つて作つてあり、また各マイナループ
群5,6は各メジヤライン3,4の1ビツト置き
に配列しているので、バブル情報の奇数列が奇数
ブロツクの各マイナループ群5の対向位置7に
並んだ時は、バブル情報の隅数列は隅数ブロツク
の各マイナループ6の対向位置8に並んでおり
トランスフアゲート9の作用により書き込みメジ
ヤライン3,4にあるバブル信号は対向するマイ
ナループの書き込み位置10,11に転送され、
駆動磁界によりマイナループ5,6内に循環す
る。 Here, the number of bits in the transfer path constituting the major lines 3 and 4 is made so that the odd number block and the corner number block are different by one bit, and each minor loop group 5 and 6 is made at every other bit of each major line 3 and 4. Therefore, when the odd numbered columns of bubble information are lined up at opposing positions 7 of each minor loop group 5 of an odd numbered block, the corner numbered columns of bubble information are lined up at opposing positions 8 of each minor loop 6 of the corner numbered blocks. By the action of the transfer gate 9, the bubble signals on the write major lines 3 and 4 are transferred to the write positions 10 and 11 of the opposing minor loops,
The driving magnetic field circulates within the minor loops 5 and 6.
次に読み出し方法としては読み出したいバブル
情報が読み出しメジヤライン12,13に対向す
るマイナループ群の読み出し位置14,15に転
送されてきた時トランスフアゲート16の作用に
よりメジヤライン12,13へ転送され以後駆動
磁界によりメジヤライン12,13にそつて転送
され検出器17,18により検出される。 Next, as for the reading method, when the bubble information to be read is transferred to the reading positions 14 and 15 of the minor loop group facing the reading major lines 12 and 13, it is transferred to the major lines 12 and 13 by the action of the transfer gate 16, and thereafter by the driving magnetic field. The signals are transferred along the measure lines 12 and 13 and detected by the detectors 17 and 18.
こゝで読み出しメジヤライン12,13におい
ても構成ビツト数は奇数ブロツクと隅数ブロツ
クでは1ビツト違つて作られているために奇数
ブロツクのバブル情報と隅数ブロツクのバブル
情報は交互に検出されその結果元の電気信号とな
つて現われる。 Here, even in the readout major lines 12 and 13, the number of constituent bits is made to differ by 1 bit between the odd-numbered block and the corner-numbered block, so the bubble information of the odd-numbered block and the bubble information of the corner-numbered block are detected alternately, and the result is It appears as the original electrical signal.
本発明はかゝるOdd−Even構成をとるバブル
メモリデバイスの検出器におけるバブル検出のた
めのストレツチ電流と駆動磁界との同期に関する
ものである。 The present invention relates to synchronization of a stretching current and a driving magnetic field for bubble detection in a bubble memory device detector having such an odd-even configuration.
すなわち第1図の読み出しメジヤライン12に
は奇数列からなるバブル情報がまた読み出しメジ
ヤライン13には隅数列からなるバブル情報がそ
れぞれ1ビツト置きに転送されている。 That is, bubble information consisting of odd number columns is transferred to the readout major line 12 in FIG. 1, and bubble information consisting of corner columns is transferred to the readout major line 13 every other bit.
以下メジヤラインがイオン注入により形成され
た連接形転送パターンよりなり、バブル検出がバ
ブルをカレントストレツチし磁気抵抗素子を用い
て検出する場合について説明する。 A case will be described below in which the measure line is formed by a continuous transfer pattern formed by ion implantation, and bubble detection is performed by current stretching the bubble and detecting it using a magnetoresistive element.
第2図は奇数列または隅数列からなる信号が読
み出しメジヤラインに沿つて転送され検出器によ
り検出される状態を示すもので、この場合バブル
信号は111の連続信号からなるものとする。 FIG. 2 shows a state in which a signal consisting of an odd number column or a corner number column is transferred along a readout major line and detected by a detector. In this case, it is assumed that the bubble signal consists of 111 continuous signals.
ここで第3図に示す駆動磁界の回転に従つて連
接形転送パターン21に沿つて転送されているバ
ブル22,23はそれぞれ転送パターンの1ビツ
トづつ離れて存在している。 Here, the bubbles 22 and 23 that are being transferred along the continuous transfer pattern 21 in accordance with the rotation of the driving magnetic field shown in FIG. 3 are located one bit apart from each other in the transfer pattern.
こゝで検出器はヘアピン形導体パターンよりな
るバブルストレツチヤ24と磁気抵抗素子25か
らなり、バブルストレツチヤ24の先端内側の湾
曲部は連接形転送パターン21のカスプ26を中
央にもつ形でパターン形成されており、またバブ
ルストレツチヤ24を構成する導体パターンの間
隙には酸化硅素(SiO2)層などで導電交叉部を
絶縁して磁気抵抗素子25が設けられている。 Here, the detector consists of a bubble stretcher 24 made of a hairpin-shaped conductor pattern and a magnetoresistive element 25, and the curved part inside the tip of the bubble stretcher 24 has a pattern with the cusp 26 of the connected transfer pattern 21 in the center. A magnetoresistive element 25 is provided in the gap between the conductive patterns constituting the bubble stretcher 24, with the conductive intersections insulated with a silicon oxide (SiO 2 ) layer or the like.
なお平行な破線で囲まれている領域27は連接
形転送パターン21と同様に形成された非イオン
注入領域である。 Note that a region 27 surrounded by parallel broken lines is a non-ion implanted region formed similarly to the connected transfer pattern 21.
こゝでバブルの検出と消去の方法としてはバブ
ルが転送されてバブルストレツチヤ24がある連
接形転送パターン21のカスプ位置26に来る位
相でバブルストレツチヤ24にヘアピン内側のバ
イアス磁界が弱まる方向にパルス電流を通電する
とカスプ位置26にあるバブル22はバブルスト
レツチヤ24内面に伸長されこの伸長されたバブ
ルからの磁界により磁気抵抗素子25の抵抗値が
変化しこれにより検出が行われ、次にバブルスト
レツチヤ24に今迄と反対方向にパルス電流を通
電することにより消去が行われている。 Here, the method for detecting and erasing bubbles is to transfer the bubble to the bubble stretcher 24 in a direction in which the bias magnetic field inside the hairpin weakens when the bubble is transferred and reaches the cusp position 26 of the connected transfer pattern 21 where the bubble stretcher 24 is located. When a pulse current is applied, the bubble 22 at the cusp position 26 is stretched to the inner surface of the bubble stretcher 24, and the magnetic field from the stretched bubble changes the resistance value of the magnetoresistive element 25, which performs detection. Erasing is performed by applying a pulse current to the stretcher 24 in the opposite direction.
さてバブルは第3図で示す約135゜より225゜まで
の駆動磁界の回転に追髄して転送され約225゜〜
135゜に至る270゜の移動範囲はカスプ位置に停留す
るもので、この期間中にバブルの検出と消去が行
わなければならない。 Now, the bubble is transferred by following the rotation of the driving magnetic field from about 135° to 225° as shown in Figure 3, and from about 225° to 225°.
The 270° movement range from 135° remains at the cusp position, and bubble detection and elimination must be performed during this period.
この駆動磁界が1回転する間に行われる検出お
よび消去は駆動周波数が低い場合は問題はないが
高くなるに従つて困難になる。 Detection and erasure performed during one rotation of this driving magnetic field poses no problem if the driving frequency is low, but becomes more difficult as the driving frequency increases.
例えば第2図において磁気抵抗素子の有効長を
100μmとしバブルの伸長速度Vs=60m/秒とす
るとバブルが100μmにまで伸長するだけで1.7μ秒
を必要とする。 For example, in Figure 2, the effective length of the magnetoresistive element is
If the bubble is 100 μm and the bubble expansion speed Vs is 60 m/sec, it takes 1.7 μsec just for the bubble to expand to 100 μm.
こゝで駆動周波数が100KHzの場合にバブルが
連接形転送パターンのカスプ位置に停留する時間
は7.5μ秒であるのに対し300KHzの場合は2.5μ秒と
短くなりこの間にバブルの伸長・検出・消去を行
うことは難しい。 Here, when the driving frequency is 100 KHz, the time the bubble stays at the cusp position of the continuous transfer pattern is 7.5 μs, but when it is 300 KHz, it is shortened to 2.5 μs, and during this time, the bubble is expanded, detected, and It is difficult to perform erasure.
発明者等はこの解決法としてOdd−Even構成
の場合に連接形転送パターンに沿つて転送される
バブル信号は1個置きに配列されているのに着目
し転送の2ビツト周期に1回の割合でストレツチ
コンダクタにパルス電流を通電する検出方法を提
案した。 As a solution to this problem, the inventors focused on the fact that in the odd-even configuration, the bubble signals transferred along the concatenated transfer pattern are arranged every other bubble signal, and the bubble signals are transmitted at a rate of once every 2 bits of transfer. proposed a detection method in which a pulsed current is applied to a stretch conductor.
この方法による場合はバブルの伸長・検出・消
去を転送の2周期に互つて行えばよいので駆動周
波数の増大に対応することができる。 In this method, bubble expansion, detection, and erasure can be performed alternately in two transfer cycles, so that it is possible to cope with an increase in the driving frequency.
然し乍らこのようにバブル検出を転送の2ビツ
ト周期毎に行う場合はバブルストレツチヤに対す
るパルス電流の通電とバブル転送とを同期してお
くことが必要である。 However, when bubble detection is performed every two bits of transfer in this way, it is necessary to synchronize the application of pulse current to the bubble stretcher and bubble transfer.
本発明の目的は両者の同期にあり、その方法と
してバブルメモリデバイスの起動または停止を検
出ビツト位置より隅数ビツト離れた位置にバブル
が存在するように行うものである。 The purpose of the present invention is to synchronize the two, and as a method for this purpose, the bubble memory device is started or stopped so that the bubble exists at a position several corner bits away from the detected bit position.
以下図面により本発明を説明する。 The present invention will be explained below with reference to the drawings.
Odd−EVen構成のバブルメモリデバイスにお
いては連接形転送パターン21に沿つて転送され
るバブルの存在位置は必ず1つ置きである。 In a bubble memory device having an Odd-EVen configuration, bubbles transferred along the concatenated transfer pattern 21 are always present at every other position.
一方バブルの伸長と消去のためにバブルストレ
ツチヤ24に流れるパルス電流の繰返し周期は転
送2周期毎に1回である。いまバブル信号の配列
が111の連続信号から成る場合、信号バブルが第
2図の22および23の位置にあるときにバブル
ストレツチヤ24にパルス電流が通電されること
がバブル検出の必要条件であつて、信号バブルが
28および29の位置にあり、この場合にバブル
ストレツチヤ24に通電が行われる場合はバブル
は検出されず次のバブルストレツチヤへの通電時
には28、および29位置のバブルは30および
28の位置に移り全く検出は行われない。 On the other hand, the repetition period of the pulse current flowing through the bubble stretcher 24 for expanding and erasing the bubble is once every two transfer periods. If the bubble signal array consists of 111 continuous signals, a necessary condition for bubble detection is that a pulse current be applied to the bubble stretcher 24 when the signal bubbles are at positions 22 and 23 in FIG. If the signal bubbles are at positions 28 and 29, and the bubble stretcher 24 is energized in this case, no bubbles will be detected, and when the next bubble stretcher is energized, the bubbles at positions 28 and 29 will be 30. and 28, and no detection is performed at all.
このような誤動作を防ぐ方法として本発明はメ
モリデバイスの起動或は停止に際しては連接形転
送パターンの検出ビツト位置より必ず隅数ビツト
離れた位置にバブルが到着した時にデバイスを停
止するようにしバブルの駆動とバブルストレツチ
ヤのパルス電流の通電時とを同期させることを本
旨とするものである。 As a method to prevent such malfunctions, the present invention, when starting or stopping a memory device, always stops the device when the bubble arrives at a position several corner bits away from the detection bit position of the concatenated transfer pattern. The main idea is to synchronize the drive and the pulse current energization of the bubble stretcher.
なお本実施例においては転送2周期毎に1度の
検出を行う場合について説明したが2周期以上の
周期毎に1度の検出を行う方法においても同様に
本発明を実施できる。 In this embodiment, a case has been described in which detection is performed once every two transfer cycles, but the present invention can be similarly implemented in a method in which detection is performed once every two or more cycles.
第1図はOdd−Even構成をとるバブルメモリ
デバイスの回路構成図、第2図は連接形転送パタ
ーンに設けられた磁気バブル検出器の動作説明
図、また第3図は回転磁界の方法とバブル転送と
の関係図である。
図において、21は連接形転送パターン、24
はバブルストレツチヤ、25は磁気抵抗素子、2
6はカスプ位置、22,23,28,29,30
は磁気バブル。
Figure 1 is a circuit diagram of a bubble memory device with an odd-even configuration, Figure 2 is an explanatory diagram of the operation of a magnetic bubble detector provided in a connected transfer pattern, and Figure 3 is a diagram of the rotating magnetic field method and bubble It is a relationship diagram with transfer. In the figure, 21 is a concatenated transfer pattern, 24
is a bubble stretcher, 25 is a magnetoresistive element, 2
6 is cusp position, 22, 23, 28, 29, 30
is a magnetic bubble.
Claims (1)
ストレツチヤと磁気抵抗素子とからなり、イオン
注入により形成された連接形転送パターンに沿つ
て転送される磁気バブルの検出と消去がバブル転
送2周期毎に行われる磁気バブルメモリデバイス
において、前記転送パターン上の前記検出器が位
置する検出ビツト位置より隅数ビツト離れた位置
に前記検出器により検出される磁気バブルが停止
するようにして、磁気バブルの駆動と検出を同期
させたことを特徴とする磁気バブルメモリデバイ
スの駆動方法。1 It has an odd-even configuration, and the detector consists of a bubble stretcher and a magnetoresistive element, and detects and erases magnetic bubbles transferred along the continuous transfer pattern formed by ion implantation every two bubble transfer cycles. In the magnetic bubble memory device to be used, the magnetic bubbles detected by the detector stop at a position several corner bits away from the detection bit position where the detector is located on the transfer pattern, and the magnetic bubble is driven. A method for driving a magnetic bubble memory device characterized by synchronizing detection with and.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56136661A JPS5837895A (en) | 1981-08-31 | 1981-08-31 | Driving method of magnetic bubble memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56136661A JPS5837895A (en) | 1981-08-31 | 1981-08-31 | Driving method of magnetic bubble memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5837895A JPS5837895A (en) | 1983-03-05 |
JPS6330718B2 true JPS6330718B2 (en) | 1988-06-20 |
Family
ID=15180538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56136661A Granted JPS5837895A (en) | 1981-08-31 | 1981-08-31 | Driving method of magnetic bubble memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837895A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4746937B2 (en) * | 2005-08-10 | 2011-08-10 | モリテックスチール株式会社 | Suspension fixing member for long body |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5263030A (en) * | 1975-11-19 | 1977-05-25 | Rockwell International Corp | Magnetic bubble domain device |
JPS5538653A (en) * | 1978-09-11 | 1980-03-18 | Hitachi Ltd | Magnetic bubble memory element |
JPS55113185A (en) * | 1979-02-22 | 1980-09-01 | Nec Corp | Magnetic bubble memory element |
JPS5665391A (en) * | 1979-10-31 | 1981-06-03 | Fujitsu Ltd | Magnetic bubble element |
-
1981
- 1981-08-31 JP JP56136661A patent/JPS5837895A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5263030A (en) * | 1975-11-19 | 1977-05-25 | Rockwell International Corp | Magnetic bubble domain device |
JPS5538653A (en) * | 1978-09-11 | 1980-03-18 | Hitachi Ltd | Magnetic bubble memory element |
JPS55113185A (en) * | 1979-02-22 | 1980-09-01 | Nec Corp | Magnetic bubble memory element |
JPS5665391A (en) * | 1979-10-31 | 1981-06-03 | Fujitsu Ltd | Magnetic bubble element |
Also Published As
Publication number | Publication date |
---|---|
JPS5837895A (en) | 1983-03-05 |
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