JPS63304693A - Formation of conductor pattern - Google Patents
Formation of conductor patternInfo
- Publication number
- JPS63304693A JPS63304693A JP14019487A JP14019487A JPS63304693A JP S63304693 A JPS63304693 A JP S63304693A JP 14019487 A JP14019487 A JP 14019487A JP 14019487 A JP14019487 A JP 14019487A JP S63304693 A JPS63304693 A JP S63304693A
- Authority
- JP
- Japan
- Prior art keywords
- conductor pattern
- sensitizer
- polymerizable compound
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 title 1
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- 238000007747 plating Methods 0.000 claims abstract description 15
- 125000002091 cationic group Chemical group 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000007772 electroless plating Methods 0.000 claims description 5
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 4
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 3
- 244000028419 Styrax benzoin Species 0.000 claims description 2
- 235000000126 Styrax benzoin Nutrition 0.000 claims description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 claims description 2
- 229960002130 benzoin Drugs 0.000 claims description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 2
- 239000012965 benzophenone Substances 0.000 claims description 2
- 235000019382 gum benzoic Nutrition 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 125000003700 epoxy group Chemical group 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000243 solution Substances 0.000 abstract description 9
- 239000003054 catalyst Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 238000010894 electron beam technology Methods 0.000 abstract description 5
- 239000011259 mixed solution Substances 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229960000834 vinyl ether Drugs 0.000 description 2
- OZCMOJQQLBXBKI-UHFFFAOYSA-N 1-ethenoxy-2-methylpropane Chemical compound CC(C)COC=C OZCMOJQQLBXBKI-UHFFFAOYSA-N 0.000 description 1
- PWESSVUYESFKBH-UHFFFAOYSA-N 2,2-dimethoxyethenylbenzene Chemical compound COC(OC)=CC1=CC=CC=C1 PWESSVUYESFKBH-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohexene oxide Natural products O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 150000005673 monoalkenes Chemical class 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229930015698 phenylpropene Natural products 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、プリント基板製造における導体パターン形成
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a conductor pattern in printed circuit board manufacturing.
従来、基板上に無電解メッキ法により導体パターンを形
成する場合には、次のような方法がとられていた。Conventionally, when forming a conductor pattern on a substrate by electroless plating, the following method has been used.
まず基板全面に接着剤層を形成し、穴あけ、粗面化を施
したのち、メッキ核となり得る触媒（パラジウム）を付
着させる。続いて、感光性レジスト層を形成し露光、現
像することによりレジストパターンを形成する。このレ
ジストパターンをマスクとして無電解銅メッキを行うこ
とにより導体パターンを形成する。このような無電解メ
ッキを利用し、回路パターンを形成する方法は特開昭６
１−１９９６９２号公報などに示されており、アディテ
ィブプロセスと呼ばれている。First, an adhesive layer is formed on the entire surface of the substrate, holes are made and the surface is roughened, and then a catalyst (palladium) that can serve as plating nuclei is attached. Subsequently, a photosensitive resist layer is formed, exposed to light, and developed to form a resist pattern. A conductor pattern is formed by performing electroless copper plating using this resist pattern as a mask. A method of forming circuit patterns using such electroless plating was disclosed in Japanese Patent Application Laid-open No. 6
1-199692, and is called an additive process.
ところが、このようなアディティブ法では、工程が多い
だけでなく無電解銅メッキ液に対して耐性のあるレジス
ト材料が必要となる。無電解銅メッキはＰＨ１２程度の
アルカリ水溶液であり、浸漬は浴温８０°Ｃ程度で長時
間行うため、レジスト材料には優れた耐アルカリ性が要
求されているが、いまだ満足できるレジスト材料は開発
されていない。又、この方法では基板表面に触媒（パラ
ジウム）を付着させて無電解銅メッキを行っているが、
付着力が弱く信頼性の面で問題となっている。However, such an additive method not only requires many steps but also requires a resist material that is resistant to electroless copper plating solution. Electroless copper plating uses an alkaline aqueous solution with a pH of about 12, and immersion is carried out for a long time at a bath temperature of about 80°C, so resist materials are required to have excellent alkali resistance, but no satisfactory resist materials have been developed yet. Not yet. In addition, in this method, a catalyst (palladium) is attached to the substrate surface and electroless copper plating is performed.
Adhesion is weak and reliability is a problem.
本発明は上記のような問題点を解消するためになされた
もので、レジスト材料を用いることなく、露光部のみに
触媒核を形成することができ１．シカも密着力に優れた
導体回路を形成することができる導体パターン形成方法
を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and it is possible to form catalyst nuclei only in exposed areas without using a resist material.1. The object of the present invention is to obtain a method for forming a conductor pattern that can form a conductor circuit with excellent adhesion to deer.
本発明に係る導体パターン形成方法は、基板上に、一般
式（１）で示される金属塩、カチオン重合性化合物およ
び所要の増感剤よりなる混合溶液を感光液として塗布し
、紫外線、電子線等の高エネルギー線照射により直接パ
ターン形成して金属核を析出させ、その後、無電解銅メ
ッキを行うようにしたものである。The method for forming a conductor pattern according to the present invention involves coating a substrate with a mixed solution containing a metal salt represented by the general formula (1), a cationic polymerizable compound, and a required sensitizer as a photosensitive liquid, In this method, a pattern is directly formed by irradiation with high-energy rays to deposit metal nuclei, and then electroless copper plating is performed.
ＣＭ） ｘ ” （ＲＳ Ｏｂ ） −（ｂ−”ｙ
・・・（１）（式中、ＭはＡｇ、Ｃｕ、ＲはＣＦ３．Ｃ
ｇ Ｆｓのようなフルオロカーボン基、ａは１又は２、
ｂは２又は３、Ｘ、 Ｙは１又は２である。）〔作用〕
本発明においては、上記一般式（１）で示される金属塩
、カチオン重合性化合物、増感剤よりなる感光液を基板
上に塗布した後、高エネルギー線により直接パターン露
光するようにしたから、レジスト材料を用いることなく
露光部のみに触媒を形成することができ、しかも密着力
に優れた導体回路を形成することができる。CM) x” (RS Ob) −(b−”y
...(1) (wherein, M is Ag, Cu, R is CF3.C
g fluorocarbon group such as Fs, a is 1 or 2,
b is 2 or 3, X and Y are 1 or 2. ) [Function] In the present invention, after applying a photosensitive solution consisting of a metal salt represented by the above general formula (1), a cationically polymerizable compound, and a sensitizer onto a substrate, pattern exposure is performed directly with high-energy rays. Therefore, the catalyst can be formed only in the exposed area without using a resist material, and a conductor circuit with excellent adhesion can be formed.
この発明に係る導体パターン形成方法は基板上に、一般
式（１）で示される金属塩、カチオン重合性化合物及び
増感剤よりなる混合溶液を感光液として塗布し、つづい
て紫外線、電子線等の高エネルギー線照射により直接パ
ターン形成して金属核を析出させ、その後無電解銅メッ
キを行うようにしたものである。The method for forming a conductor pattern according to the present invention is to apply a mixed solution of a metal salt represented by the general formula (1), a cationic polymerizable compound, and a sensitizer onto a substrate as a photosensitive liquid, and then apply ultraviolet rays, electron beams, etc. A pattern is formed directly by irradiation with high-energy rays to precipitate metal nuclei, and then electroless copper plating is performed.
ＣＭ：ｌ ｘ ” （ＲＳ Ｏｂ） −（ト”ｖ ・
・・（１）（式中、ＭはＡｇ、Ｃｕ、ＲはＣＦ、、Ｃ２
Ｆ５のようなフルオロカーボン基、ａは１又は２、ｂは
２又は３、Ｘ、Ｙは１又は２である。）ここで、上記感
光液に用いうる金属塩としてはＡｇｚＳ（ｈＣＦ３．Ａ
ｇｚＳＯ：ｔｃｚＦｓ、 Ａｇ５Ｏ□ＣＦ、、 Ａｇ５
Ｏ□Ｃ２Ｆ５゜１：：ｕＳＯ３ＣＦ３． Ｃｕ５Ｏ：＋
ＣＪｓ、Ｃｕ（ＳＯｚＣＦｓ）ｚ、Ｃｕ（ＳＯｚＣｚＦ
ｓ）ｚ等の化合物がある。これらの化合物は増感剤、カ
チオン重合性化合物共存下で高エネルギー線照射を行う
と、金属が析出するとともにルイス酸が生成し、カチオ
ン重合性化合物の重合が起こるものである。このような
感光液を使用した場合には、露光部分のみ金属が析出す
るとともに、カチオン重合性化合物が重合し、この重合
物が金属核と基板との接着層となるため、優れた密着性
を有する回路パターンが得られるものである。さらにこ
の感光液は保存安定性、熱安定性に優れたものである。CM:l x ” (RS Ob) -(t”v ・
...(1) (wherein M is Ag, Cu, R is CF, C2
A fluorocarbon group such as F5, a is 1 or 2, b is 2 or 3, X, Y are 1 or 2. ) Here, AgzS (hCF3.A
gzSO:tczFs, Ag5O□CF,, Ag5
O□C2F5゜1::uSO3CF3. Cu5O:+
CJs, Cu(SOzCFs)z, Cu(SOzCzF
There are compounds such as s)z. When these compounds are irradiated with high energy rays in the coexistence of a sensitizer and a cationic polymerizable compound, the metal precipitates and a Lewis acid is generated, causing polymerization of the cationic polymerizable compound. When such a photosensitive liquid is used, the metal is deposited only in the exposed areas, and the cationic polymerizable compound is polymerized, and this polymer becomes an adhesive layer between the metal core and the substrate, resulting in excellent adhesion. A circuit pattern having the following characteristics can be obtained. Furthermore, this photosensitive solution has excellent storage stability and thermal stability.
また、上記カチオン重合性化合物としては、モノ−およ
びジオレフィン、例えばイソブチレン。The cationically polymerizable compounds include mono- and diolefins, such as isobutylene.
ノーオクテン、ブタジェンおよびイソプレン、スチレン
、ジビニルベンゼン、アリルベンゼン、ビニルエーテル
（ビニルメチルエーテル、ビニルイソブチルエーテル、
エチレングリコール、ジビニルエーテル等）、ビニルエ
ステル（ビニルアセテート、ビニルステアレート等）、
Ｎ−ビニル化合物（Ｎ−ビニルピロリドン、Ｎ−ビニル
カルバゾール等）、あるいはモノ−およびジ−エポキシ
化合物、例えばフェニルグリシジルエーテル、シクロヘ
キセンオキシド、グリシジルメタクリレート。No-octene, butadiene and isoprene, styrene, divinylbenzene, allylbenzene, vinyl ether (vinyl methyl ether, vinyl isobutyl ether,
ethylene glycol, divinyl ether, etc.), vinyl esters (vinyl acetate, vinyl stearate, etc.),
N-vinyl compounds (N-vinylpyrrolidone, N-vinylcarbazole, etc.) or mono- and di-epoxy compounds such as phenylglycidyl ether, cyclohexene oxide, glycidyl methacrylate.
ビスフェノールＡ型エポキシ樹脂、フェノールノボラッ
ク型エポキシ樹脂、クレゾールノボラソク型エポキシ樹
脂、脂環式エポキシ樹脂などがあげられ、これらの化合
物を単独もしくは混合して用いることができる。Examples include bisphenol A type epoxy resin, phenol novolak type epoxy resin, cresol novolasoc type epoxy resin, and alicyclic epoxy resin, and these compounds can be used alone or in combination.
また、本発明に用いうる増感剤としては、アントラセン
、ベンゾフェノン、チオキサントン、ベンゾイン等の誘
導体のいずれかあるいはこれらの混合剤を用いることが
でき、使用する光源波長により選択できる。Further, as the sensitizer that can be used in the present invention, any one of derivatives such as anthracene, benzophenone, thioxanthone, and benzoin, or a mixture thereof can be used, and the sensitizer can be selected depending on the wavelength of the light source used.
このような構成による高エネルギー線照射により金属核
を析出しうる感光性化合物は、通常の有機溶媒に溶解さ
せた状態もしくは、カチオン重合性化合物に溶解させた
状態で使用でき、基板の浸漬、その他の塗布法、例えば
ローラーコータ、スピンコード、スクリーン印刷などの
方法により基板上に塗布できる。A photosensitive compound capable of precipitating metal nuclei by high-energy ray irradiation with such a configuration can be used in a state dissolved in a normal organic solvent or in a state dissolved in a cationic polymerizable compound, and can be used by dipping a substrate, etc. It can be applied onto the substrate by a coating method such as a roller coater, a spin code, or a screen printing method.
また、光源としては、高圧水銀灯、低圧水銀灯２エキシ
マレーザなどの紫外線光源、および電子線。Further, as a light source, an ultraviolet light source such as a high pressure mercury lamp, a low pressure mercury lamp 2 excimer laser, and an electron beam.
Ｘ線などが使用でき、マスクを用いた一括露光。Can use X-rays, etc., and performs bulk exposure using a mask.
ビームによる直接描画などの露光方法が用いられうる。Exposure methods such as direct beam writing can be used.
また、露光後、定着処理および加熱処理を行うこともで
きる。以上のような処理を行った基板を無電解銅メッキ
液に浸漬することにより、銅回路パターンを形成するこ
とができる。Furthermore, after exposure, fixing treatment and heat treatment can also be performed. A copper circuit pattern can be formed by immersing the substrate treated as described above in an electroless copper plating solution.
以下、本発明の具体例について詳細に説明するが、本発
明はこれらの具体例のみに限定されるものではない。Hereinafter, specific examples of the present invention will be described in detail, but the present invention is not limited only to these specific examples.
〈具体例１〉
ＡｇｚＳＯ３ＣＦ＋１０ｇ１ タレゾールノボラックエ
ポキシ樹脂ＥＯＣＮ−１０３（日本化薬製） １０ｇ、
チオキサントン１ｇをメチルセルソルブ１００ｍ１に溶
解させたものを感光液として、表面処理を行ったガラス
エポキシ基板を浸漬、乾燥することにより、ガラスエポ
キシ基板上に感光層を形成した。この基板に、マスクを
介して、５０咋の高圧水銀灯を３０秒照射した。<Specific Example 1> AgzSO3CF+10g1 Talesol novolac epoxy resin EOCN-103 (manufactured by Nippon Kayaku) 10g,
A photosensitive layer was formed on the glass epoxy substrate by dipping a surface-treated glass epoxy substrate in a photosensitive solution prepared by dissolving 1 g of thioxanthone in 100 ml of methyl cellosolve and drying. This substrate was irradiated with a 50 liter high pressure mercury lamp for 30 seconds through a mask.
その後、無電解メッキ液に８０℃７５時間浸漬すること
により銅メッキを行った。その結果、線幅５０μｍの導
体パターンが得られた。このとき、メッキ液内での銅の
異常析出、メッキかぶりなどの不具合は認められなかっ
た。Thereafter, copper plating was performed by immersing it in an electroless plating solution at 80° C. for 75 hours. As a result, a conductor pattern with a line width of 50 μm was obtained. At this time, no defects such as abnormal copper precipitation in the plating solution or plating fog were observed.
〈具体例２〉
ＣＣｕＳ０３ＣＦｉｌＯ，タレゾールノボラックエポキ
シ樹脂ＥＯＣＮ−１０３（日本化薬製） １０ｇ、 ２
．６ジメトキシスチレン３ｇをメチルセルソルブ１００
ｍ （ｌに溶解させたものを感光液として上記具体例１
と同様の方法により感光層をガラスエポキシ基板上に形
成した。<Specific Example 2> CCuS03CFilO, Talesol novolak epoxy resin EOCN-103 (manufactured by Nippon Kayaku) 10 g, 2
．． 6 Dimethoxystyrene 3g to Methyl Celsolve 100
The above specific example 1 was prepared by dissolving the solution in
A photosensitive layer was formed on a glass epoxy substrate in the same manner as described above.
この基板に電子ビーム照射により直接パターン描画を行
った。このときの電子ビーム照射条件は、加速電圧２５
ｋＬ スポット径０．５μｍで１０μＣ／ｃ１Ａの照射
量であった。その後、具体例１と同様にして無電解銅メ
ッキを行った。その結果、線幅２０μｍの導体パターン
が得られた。A pattern was directly drawn on this substrate by electron beam irradiation. The electron beam irradiation conditions at this time are an acceleration voltage of 25
The irradiation dose was 10 μC/c1A with a kL spot diameter of 0.5 μm. Thereafter, electroless copper plating was performed in the same manner as in Example 1. As a result, a conductor pattern with a line width of 20 μm was obtained.
以上のように、本発明に係る導体パターン形成方法によ
れば、保存安定性、熱安定性に優れ高エネルギー照射に
より金属核を析出する感光剤を用いて、露光部のみに触
媒を形成し無電解銅メッキにより導体パターンを形成す
るようにしたので、精度の高い導体パターンを容易に得
ることができ、また導体パターンの密着性及び信頼性を
向上できる効果がある。As described above, according to the conductor pattern forming method according to the present invention, a catalyst is formed only in the exposed area using a photosensitizer that has excellent storage stability and thermal stability and can precipitate metal nuclei by high-energy irradiation. Since the conductor pattern is formed by electrolytic copper plating, a highly accurate conductor pattern can be easily obtained, and the adhesion and reliability of the conductor pattern can be improved.
Claims (3)
析出しうる感光液を塗布し、高エネルギー線により直接
パターン形成を行ってメッキ核を析出させ、その後無電
解メッキにより導体パターンを形成する方法において、 上記感光液として、一般式（ I ）で示される金属塩、
カチオン重合性化合物および所要の増感剤を混合してな
る溶液を用いることを特徴とする導体パターン形成方法
。 〔Ｍ〕＿Ｘ＾ａ＾＋〔ＲＳＯｂ〕＾−＾（＾ｂ＾−＾１
＾）・・・（ I ）（式中、ＭはＡｇ、Ｃｕ、Ｒはフル
オロカーボン基、ａは１又は２、ｂは２又は３、Ｘ、Ｙ
は１又は２である。）(1) Apply a photosensitive solution capable of depositing electroless plating nuclei onto the surface-treated substrate, directly form a pattern with high-energy beams to deposit plating nuclei, and then form a conductor pattern by electroless plating. In the method, the photosensitive liquid includes a metal salt represented by general formula (I),
A method for forming a conductor pattern, comprising using a solution prepared by mixing a cationic polymerizable compound and a required sensitizer. [M]_X^a^+[RSOb]^-^(^b^-^1
^)...(I) (In the formula, M is Ag, Cu, R is a fluorocarbon group, a is 1 or 2, b is 2 or 3, X, Y
is 1 or 2. )
ン、チオキサントン、ベンゾインのいずれかまたはこれ
らの混合剤を用いることを特徴とする特許請求の範囲第
１項記載の導体パターン形成方法。(2) The method for forming a conductor pattern according to claim 1, characterized in that the sensitizer is any one of anthracene, benzophenone, thioxanthone, benzoin, or a mixture thereof.
子中に２個以上有する化合物を用いることを特徴とする
特許請求の範囲第１項または第２項記載の導体パターン
形成方法。(3) The method for forming a conductor pattern according to claim 1 or 2, wherein a compound having two or more epoxy groups in the molecule is used as the cationically polymerizable compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14019487A JPS63304693A (en) | 1987-06-04 | 1987-06-04 | Formation of conductor pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14019487A JPS63304693A (en) | 1987-06-04 | 1987-06-04 | Formation of conductor pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63304693A true JPS63304693A (en) | 1988-12-12 |
Family
ID=15263097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14019487A Pending JPS63304693A (en) | 1987-06-04 | 1987-06-04 | Formation of conductor pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63304693A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04268070A (en) * | 1990-11-02 | 1992-09-24 | Abb Patent Gmbh | Method for forming metal layer on substrate |
| JP2001026880A (en) * | 1999-07-14 | 2001-01-30 | Fujitsu Ltd | Formation of conductor pattern |
| CN115992354A (en) * | 2022-11-16 | 2023-04-21 | 浙江鑫柔科技有限公司 | Method for forming metal film on flexible substrate |
-
1987
- 1987-06-04 JP JP14019487A patent/JPS63304693A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04268070A (en) * | 1990-11-02 | 1992-09-24 | Abb Patent Gmbh | Method for forming metal layer on substrate |
| JP2001026880A (en) * | 1999-07-14 | 2001-01-30 | Fujitsu Ltd | Formation of conductor pattern |
| CN115992354A (en) * | 2022-11-16 | 2023-04-21 | 浙江鑫柔科技有限公司 | Method for forming metal film on flexible substrate |
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