JPS63304652A - Semiconductor module and manufacture thereof - Google Patents
Semiconductor module and manufacture thereofInfo
- Publication number
- JPS63304652A JPS63304652A JP62138881A JP13888187A JPS63304652A JP S63304652 A JPS63304652 A JP S63304652A JP 62138881 A JP62138881 A JP 62138881A JP 13888187 A JP13888187 A JP 13888187A JP S63304652 A JPS63304652 A JP S63304652A
- Authority
- JP
- Japan
- Prior art keywords
- water
- cooling
- cooling system
- semiconductor
- corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000001816 cooling Methods 0.000 claims abstract description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000007747 plating Methods 0.000 claims abstract description 17
- 239000000498 cooling water Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000007769 metal material Substances 0.000 claims abstract description 5
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims abstract description 3
- 235000011150 stannous chloride Nutrition 0.000 claims abstract description 3
- 239000001119 stannous chloride Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 24
- 230000007797 corrosion Effects 0.000 abstract description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 8
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＬＳＩ素子などの半導体チップの冷却系を備え
た半導体モジュールに係り、特に冷却系の耐食性に優れ
た半導体モジュール及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor module equipped with a cooling system for a semiconductor chip such as an LSI element, and more particularly to a semiconductor module with excellent corrosion resistance of the cooling system and a method for manufacturing the same.
ＬＳＩなどの半導体チップは発熱による温度上昇を防止
するため、従来はチップを格納するパッケージにフィン
を取付け、ファンにより送風して冷却する強制空冷方式
であった。しかし、チップの高集積化及び配線基板への
高密度実装により発熱量が次第に増大し、空冷ではチッ
プの最高使用温度以下に保持することが難しく冷却効率
の高い液冷方式が必要となっている。液冷方式では半導
体チップ上に冷却構造体を設け、この中に通水して水冷
する方式が最も実用的で効率の良い方法である。In order to prevent semiconductor chips such as LSIs from rising in temperature due to heat generation, conventionally a forced air cooling method has been used in which fins are attached to the package housing the chip and air is blown by a fan to cool the chip. However, as chips become more highly integrated and densely mounted on wiring boards, the amount of heat generated gradually increases, making it difficult to maintain the chips below the maximum operating temperature using air cooling, and a liquid cooling method with high cooling efficiency is required. . In the liquid cooling method, the most practical and efficient method is to provide a cooling structure on the semiconductor chip and cool it by passing water through the structure.
従来提案されている水冷却系は特開昭６１−２７６２４
２号のように可とう性ベローズとキャップからなる冷却
構造体及び送水路を有するノ・ウジングから構成されて
いる。また、特開昭６０−１６０１５０号のように可と
う性ベローズ、伝熱板、冷却水供給排出ヘッダから構成
されているものがある。また、特開昭６１−７７３５１
号のように可とう性ベローズ、冷却板、冷却水供給ヘッ
ダから構成され、接合部の異種金属接触腐食を考慮して
犠牲陽極を備えたものがある。The conventionally proposed water cooling system is disclosed in Japanese Patent Application Laid-Open No. 61-27624.
Like No. 2, it consists of a cooling structure consisting of a flexible bellows and a cap, and a housing having a water supply channel. Furthermore, there is a device as disclosed in Japanese Patent Application Laid-open No. 160150/1985 that is composed of a flexible bellows, a heat exchanger plate, and a cooling water supply/discharge header. Also, JP-A-61-77351
As shown in No. 2, it consists of a flexible bellows, a cooling plate, and a cooling water supply header, and is equipped with a sacrificial anode in consideration of contact corrosion of dissimilar metals at the joint.
上記従来技術は、半導体チップの冷却効率や熱変形を吸
収するための可とう性ベローズの構造には十分な配慮が
なされていたが、冷却構造体の腐食については必らずし
も十分な配慮がなく、わずかに接合部の溶接、ロウ付け
、・・ンダ付けによる異種金属接触腐食の防止策が提案
されているのみである。In the above conventional technology, sufficient consideration was given to the cooling efficiency of the semiconductor chip and the structure of the flexible bellows to absorb thermal deformation, but sufficient consideration was not necessarily given to corrosion of the cooling structure. There are only a few proposed measures to prevent contact corrosion of dissimilar metals by welding, brazing, and soldering joints.
しかるに冷却系では前記、接合部のみならず、冷却系の
構成に伴う隙間が存在する。冷却水による材料の腐食で
は、隙間腐食及び異種金属接触腐食が局部的に腐食が進
行するため極めて危険である。上記、従来技術では、接
合部の異種金属接触腐食に対する考慮はあるものの漏水
につながる最も危険な隙間腐食防止にまでは配慮されて
おらず、耐食信頼性に問題があった。However, in the cooling system, gaps exist not only at the joints but also due to the configuration of the cooling system. Corrosion of materials caused by cooling water is extremely dangerous because crevice corrosion and contact corrosion of dissimilar metals progress locally. In the above-mentioned conventional technology, although consideration is given to contact corrosion of dissimilar metals at joints, no consideration is given to prevention of crevice corrosion, which is the most dangerous type that can lead to water leakage, and there is a problem in corrosion resistance reliability.
本発明の目的は上記従来技術の問題点を解決し、１つの
手段で隙間腐食と異種金属接触腐食を同時に防止する冷
却系を有する半導体モジュール及びその製造方法を提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to provide a semiconductor module having a cooling system that simultaneously prevents crevice corrosion and dissimilar metal contact corrosion by one means, and a method for manufacturing the same.
本発明を概説すれば、本発明の第１の発明は半導体モジ
ュールに関する発明であって、半導体チップを複数個搭
載した配線基板、該半導体チップを個々に冷却する密閉
循環水冷却構造体、及び該水冷却構造体、半導体チップ
及び配線基板の半導体チップ搭載側を密封収容した送水
路を有するノ・ウジングを包含する半導体モジュールに
おいて、冷却系の接水部表面が同一金属材料で被覆され
ていることを特徴とする。To summarize the present invention, the first invention of the present invention relates to a semiconductor module, which includes a wiring board on which a plurality of semiconductor chips are mounted, a closed circulating water cooling structure for individually cooling the semiconductor chips, and a closed circulating water cooling structure for cooling the semiconductor chips individually. In a semiconductor module that includes a water cooling structure, a semiconductor chip, and a housing having a water supply channel that seals the semiconductor chip mounting side of the wiring board, the surface of the water contact part of the cooling system is coated with the same metal material. It is characterized by
そして、本発明の第２の発明は上記第１の発明の半導体
モジュールを製造する方法に関する発明であって、その
製造において、該モジュールｔ−組立てた後に、冷却水
流路に還元剤ｆ：金含有る化学メツ岑液を通液して、冷
却系の接水部表面を同一金属材料で被覆する工程を包含
することを特徴とする。The second invention of the present invention relates to a method for manufacturing the semiconductor module of the first invention, and in the manufacturing, after the module t is assembled, a reducing agent f: containing gold is added to the cooling water flow path. The method is characterized in that it includes a step of passing a chemical liquid through the cooling system and coating the surface of the water-contacting part of the cooling system with the same metal material.
化学めっき液は冷却系の接水部表面と接触することによ
り、該接水部表面に金属被覆層を均一に形成する。この
被覆層によって冷却系の隙間開口部をカバーして隙間を
消去すると共に該接水部表面全体を被覆することによっ
て構成材料間の電位差を消去する。これによって、半導
体モジュールの冷却系の隙間腐食と異種金属接触腐食を
完全に防止するようにした。The chemical plating solution uniformly forms a metal coating layer on the surface of the water-contacted part by coming into contact with the surface of the water-contacted part of the cooling system. This coating layer covers the gap opening of the cooling system to eliminate the gap, and also covers the entire surface of the water contact area to eliminate the potential difference between the constituent materials. This completely prevents crevice corrosion and contact corrosion of different metals in the cooling system of semiconductor modules.
化学めっきの種類としては、本発明の目的を達成するた
めには特に種類は問わず、ニッケル、銅、スズ、コバル
ト、タングステン、金などの単独あるいは合金めっきを
用いることができる。このうち、耐食性などを考慮すれ
ばニッケルあるいはその合金めっきが実用的である。As for the type of chemical plating, in order to achieve the object of the present invention, any type of chemical plating may be used, and plating of nickel, copper, tin, cobalt, tungsten, gold, etc. may be used alone or in an alloy. Among these, nickel or its alloy plating is practical if corrosion resistance is considered.
ベローズ、キャップ、送水路を有する” ウシ：ｙグを
ノ・ンダ付けあるいはロウ付けなどにより冷却系を構成
後に、冷却水流路に化学めっき液を通液するに際し、ま
ず初めに塩化第１スズあるいは塩化パラジウムを含む活
性化液を通液し、その後、還元剤を含有する化学めっき
液を通液するのが良い。これにより冷却系構成材の接水
部表面に均一に活性化液中の金属が析出し、その後の化
学めっきに際して、構成材の種類によらず、その表面を
活性とするため均一な化学めっき被覆を得ることができ
る。After configuring the cooling system by gluing or brazing Y-glue, when passing the chemical plating solution through the cooling water flow path, first tin chloride or It is best to pass an activating solution containing palladium chloride, and then pass through a chemical plating solution containing a reducing agent.This allows the metal in the activating solution to be uniformly coated on the surface of the water-contacted parts of the cooling system components. is precipitated, and during the subsequent chemical plating, the surface is made active regardless of the type of constituent material, so that a uniform chemical plating coating can be obtained.
以下、本発明を実施例により更に具体的に説明するが、
本発明はこれら実施例に限定されない。Hereinafter, the present invention will be explained in more detail with reference to Examples.
The invention is not limited to these examples.
実施例１
本発明を第１図によって詳ａに説明する。すなわち第１
図は本発明の一実施例の半導体モジュールの断面図であ
る。第１図において符号１は半導体チップ、２はプリン
ト基板、３はボールハンダ。Example 1 The present invention will be explained in detail with reference to FIG. That is, the first
The figure is a sectional view of a semiconductor module according to an embodiment of the present invention. In FIG. 1, numeral 1 is a semiconductor chip, 2 is a printed circuit board, and 3 is a ball solder.
４は熱伝導ペースト、５は冷却板、６はキャップ、７は
ベローズ、８はハウジング、ムはハンダ、Ｂは銀ロウ、
９はニッケルメッキ膜を意味する。4 is thermal conductive paste, 5 is a cooling plate, 6 is a cap, 7 is a bellows, 8 is a housing, M is solder, B is silver solder,
9 means a nickel plating film.
半導体チップ１はプリント基板２にボール−・ンダ３に
より接合される。半導体チップ１の上面には熱伝導ペー
スト４を介して冷却板５が固着される。この冷却板５に
は冷却水を通すキャップ６がハンダＡにより接合されて
いる。キャップ６には可トウ性ベローズ７の下端がハン
ダＡにより接合され、更にベローズ７の上端がハウジン
グ８ＶＣ接続される。ハウジング８は銀ロウＢによりプ
リント基板２に固着されている。このハウジング８は２
分割構造になっており、半導体チップ１に冷却構造体が
接続された後、最終的に−・ウジング８の上部が−・ン
ダＡにより接合されて冷却系ｋｍする半導体モジュール
となる。このようにして形成した半導体モジュールの冷
却水通路に塩化第１スズの水溶液を通液し、次いで塩化
パラジウム水溶液を通して、接水部表面全体にパラジウ
ムを置換析出させた後、還元剤を含有する化学ニッケル
めっき液を通液して、冷却系の接水部表面全体にニッケ
ルメッキ膜９全形成した。A semiconductor chip 1 is bonded to a printed circuit board 2 using a ball solder 3. A cooling plate 5 is fixed to the upper surface of the semiconductor chip 1 with a thermally conductive paste 4 interposed therebetween. A cap 6 through which cooling water passes is bonded to the cooling plate 5 with solder A. The lower end of a towable bellows 7 is joined to the cap 6 by solder A, and the upper end of the bellows 7 is connected to a housing 8VC. The housing 8 is fixed to the printed circuit board 2 with silver solder B. This housing 8 is 2
It has a divided structure, and after the cooling structure is connected to the semiconductor chip 1, the upper part of the housing 8 is finally joined by the housing A to form a semiconductor module with a cooling system. A stannous chloride aqueous solution is passed through the cooling water passage of the semiconductor module thus formed, and then a palladium chloride aqueous solution is passed through the cooling water passage to precipitate palladium on the entire surface of the water-contacted area. A nickel plating solution was passed through to form a nickel plating film 9 on the entire surface of the water contact part of the cooling system.
このように冷却系の接水部表面に同一材料の被覆層を形
成することで、冷却板５、キャップ６、ベローズ７、ハ
ウジング８、ハンダＡ７）どの材質による電位差が消去
されて接水部表面が等電位になり異種金属接触腐食が生
じない、ま念、上記冷却系の各部品の構成に伴って生じ
る微細隙間部が被覆層で消去され、水漏れ事故に至りや
すい隙間腐食が防止される。By forming a coating layer of the same material on the surface of the water-contacting part of the cooling system in this way, the potential difference due to any material (cooling plate 5, cap 6, bellows 7, housing 8, solder A7) is eliminated and the surface of the water-contacting part is are at equal potential, and contact corrosion of dissimilar metals does not occur. Please note that the fine gaps that occur due to the configuration of each component of the cooling system are eliminated by the coating layer, preventing crevice corrosion that can easily lead to water leakage accidents. .
〔発明の効果］
本発明によれば、冷却系の構成材質の違いによる異種金
属接触腐食及び冷却系構成部品の組立てに伴う隙間構造
に起因する隙間腐食を完全に防止できるので、耐食信頼
性が優れ、かつ長寿命の半導体モジュールができる。[Effects of the Invention] According to the present invention, it is possible to completely prevent contact corrosion of dissimilar metals due to differences in the constituent materials of the cooling system and crevice corrosion caused by the gap structure associated with the assembly of cooling system components, thereby improving corrosion resistance reliability. A superior and long-life semiconductor module can be created.
第１図は本発明の一実施例の半導体モジュールの断面図
である。
１・・・半導体チップ、２・・・プリント基板、３・・
−ボールハンダ、４−・−熱伝導ペースト、５・・・・
・冷却板、６・−・キャップ、７・・・ベローズ、８・
・・ハウジング、Ａ・・−ハンダ、Ｂ・・・銀ロウ、９
・・・ニッケルメッキ膜FIG. 1 is a sectional view of a semiconductor module according to an embodiment of the present invention. 1... Semiconductor chip, 2... Printed circuit board, 3...
-Ball solder, 4-... -Thermal conductive paste, 5...
・Cooling plate, 6.--Cap, 7.Bellows, 8.
・・Housing, A・・Solder, B・Silver solder, 9
...Nickel plating film
Claims (1)
チップを個々に冷却する密閉循環水冷却構造体、及び該
水冷却構造体、半導体チップ及び配線基板の半導体チッ
プ搭載側を密封収容した送水路を有するハウジングを包
含する半導体モジュールにおいて、冷却系の接水部表面
が同一金属材料で被覆されていることを特徴とする半導
体モジュール。 ２、半導体チップを複数個搭載した配線基板、該半導体
チップを個々に冷却する密閉循環水冷却構造体、及び該
水冷却構造体、半導体チップ及び配線基板の半導体チッ
プ搭載側を密封収容した送水路を有するハウジングを包
含する半導体モジュールを製造する方法において、該モ
ジュールを組立てた後に、冷却水流路に還元剤を含有す
る化学メッキ液を通液して、冷却系の接水部表面を同一
金属材料で被覆する工程を包含することを特徴とする半
導体モジュールの製造方法。 ３、該被覆は、該モジュールを組立てた後に、冷却水流
路内を減圧脱気し、塩化第１スズ又は塩化パラジウムを
含有する活性化液を通液し、次いで還元剤を含有する化
学メッキ液を通液して行う特許請求の範囲第２項記載の
半導体モジュールの製造方法。[Scope of Claims] 1. A wiring board on which a plurality of semiconductor chips are mounted, a closed circulating water cooling structure for cooling the semiconductor chips individually, and a semiconductor chip mounting side of the water cooling structure, the semiconductor chips, and the wiring board. What is claimed is: 1. A semiconductor module including a housing having a water supply channel in which a cooling system is hermetically housed, wherein the surface of a water contacting part of a cooling system is coated with the same metal material. 2. A wiring board on which a plurality of semiconductor chips are mounted, a closed circulating water cooling structure that cools the semiconductor chips individually, and a water conduit that seals and accommodates the water cooling structure, the semiconductor chips, and the semiconductor chip mounting side of the wiring board. In a method for manufacturing a semiconductor module including a housing having a housing, after assembling the module, a chemical plating solution containing a reducing agent is passed through the cooling water flow path so that the surface of the water-contacting part of the cooling system is coated with the same metal material. 1. A method for manufacturing a semiconductor module, comprising the step of coating with. 3. After the module is assembled, the cooling water channel is degassed under reduced pressure, an activating solution containing stannous chloride or palladium chloride is passed through, and then a chemical plating solution containing a reducing agent is applied to the coating. A method for manufacturing a semiconductor module according to claim 2, which is carried out by passing a liquid through the method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62138881A JPS63304652A (en) | 1987-06-04 | 1987-06-04 | Semiconductor module and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62138881A JPS63304652A (en) | 1987-06-04 | 1987-06-04 | Semiconductor module and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63304652A true JPS63304652A (en) | 1988-12-12 |
Family
ID=15232295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62138881A Pending JPS63304652A (en) | 1987-06-04 | 1987-06-04 | Semiconductor module and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63304652A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4977443A (en) * | 1988-09-21 | 1990-12-11 | Hitachi, Ltd. | Semiconductor module and an electronic computer using the semiconductor module |
| JP2012222214A (en) * | 2011-04-12 | 2012-11-12 | Fujitsu Ltd | Cooler, electronic apparatus, and cooling system |
-
1987
- 1987-06-04 JP JP62138881A patent/JPS63304652A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4977443A (en) * | 1988-09-21 | 1990-12-11 | Hitachi, Ltd. | Semiconductor module and an electronic computer using the semiconductor module |
| JP2012222214A (en) * | 2011-04-12 | 2012-11-12 | Fujitsu Ltd | Cooler, electronic apparatus, and cooling system |
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