JPS63304595A - Manufacture of el luminous element - Google Patents
Manufacture of el luminous elementInfo
- Publication number
- JPS63304595A JPS63304595A JP62140551A JP14055187A JPS63304595A JP S63304595 A JPS63304595 A JP S63304595A JP 62140551 A JP62140551 A JP 62140551A JP 14055187 A JP14055187 A JP 14055187A JP S63304595 A JPS63304595 A JP S63304595A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- light emitting
- light
- insulation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 238000003486 chemical etching Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 7
- 229910004481 Ta2O3 Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、Ｅ Ｌ （ｅｌｅｃｔｒｏｌｕｍｉｎｅｓｃ
ｅｎｔ）発光素子の耐電圧特性の改善に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention is directed to electroluminescence
ent) relates to improvement of the withstand voltage characteristics of a light emitting element.
第３図に従来の薄膜ＥＬ発光素子の構成例を示す。同図
の構成は、透明基板１の上に下部透明電極２を形成する
。そして下部透明電極２の上に形成した下部絶縁層３の
上に発光層４を積層する。FIG. 3 shows an example of the configuration of a conventional thin film EL light emitting device. In the configuration shown in the figure, a lower transparent electrode 2 is formed on a transparent substrate 1. Then, a light emitting layer 4 is laminated on the lower insulating layer 3 formed on the lower transparent electrode 2.
本明細書で述べる発光層４は、発光母材と発光中心材料
とを均一に混ぜて構成したペレットに、例えば電子ビー
ムを照射してこれを加熱させ、発光母材と発光中心材料
を蒸気化して飛ばし、その結果下部絶縁層３の上に発光
層４を形成するようにしたものである。緑色を発光させ
るには発光層４に、例えばＺｎＳ：ＴｂＦ＝＋等の材料
を用い、赤色を発光させるにはＺｎ Ｓ ： ８１＋１
Ｆ３等の材料を用いる。そして例えば上述のように蒸
着法で形成したり、又はスパッタリング法で形成する。The light-emitting layer 4 described in this specification is formed by heating a pellet formed by uniformly mixing a light-emitting base material and a light-emitting center material with, for example, an electron beam to vaporize the light-emitting base material and the light-emitting center material. As a result, a light emitting layer 4 is formed on the lower insulating layer 3. To emit green light, use a material such as ZnS:TbF=+ for the light emitting layer 4, and to emit red light, use ZnS: 81+1.
Use a material such as F3. For example, it is formed by a vapor deposition method as described above, or by a sputtering method.
その後、発光層４の上に上部絶縁層５を形成し、更に、
その上に上部電極６を形成する。After that, an upper insulating layer 5 is formed on the light emitting layer 4, and further,
An upper electrode 6 is formed thereon.
以上のように構成したＥＬ発光素子において、第３図の
ように下部透明電極２と上部電極６の間に交流電圧Ｖを
印加すると、公知の原理により発光層４の材料に応じた
色で発光する。In the EL light emitting device configured as described above, when an AC voltage V is applied between the lower transparent electrode 2 and the upper electrode 6 as shown in FIG. do.
しかし以上のような従来手段は次の問題点を有している
。発光層４を形成する際、発光母材（例えばＺｕＳ）と
発光中心材料（例えばＴｂ Ｆ３ ）を均一に混ぜたペ
レットを用いて蒸着すると、第４図のように発光層４の
上に突起８が生じ易い。However, the conventional means described above has the following problems. When forming the light-emitting layer 4, if a pellet containing a uniform mixture of a light-emitting base material (e.g. ZuS) and a light-emitting center material (e.g. TbF3) is vapor deposited, projections 8 are formed on the light-emitting layer 4 as shown in FIG. is likely to occur.
その理由を述べる。上述のように発光母材と発光中心材
料とを均一に混ぜたペレットに電子ビームを照射して加
熱し、蒸気化して下部絶縁層３に付着させている。この
際、発光母材と発光中心材料では融点が異なるが、どち
らの材料も蒸気化して同時に飛ばす必要上、必ず、一方
の材料が沸騰状態となる。その結果、大きな粒子が飛び
、これが下部絶縁層３へ付着することにより突起８が発
生する。そして、この突起８が原因となって、発光層４
の上に形成した上部絶縁層５にピンホール７が発生する
そして、このピンホール７のため上部絶縁層５の耐電圧
が低下する問題がある。I will explain the reason. As described above, the pellet, which is a uniform mixture of the luminescent base material and the luminescent center material, is irradiated with an electron beam, heated, vaporized, and adhered to the lower insulating layer 3. At this time, although the luminescent base material and the luminescent center material have different melting points, one of the materials is necessarily in a boiling state because both materials must be vaporized and blown off at the same time. As a result, large particles fly and adhere to the lower insulating layer 3, thereby generating protrusions 8. This protrusion 8 causes the light emitting layer 4 to
A pinhole 7 is generated in the upper insulating layer 5 formed thereon, and this pinhole 7 causes a problem in that the withstand voltage of the upper insulating layer 5 is reduced.
本発明の目的は、発光層４の突起を除去することにより
、１１発光素子の耐電圧を向上させ、発光輝度を向上さ
せることができる１１発光素子の製造方法を提供するこ
とである。An object of the present invention is to provide a method for manufacturing a light-emitting element No. 11, which can improve the withstand voltage of the light-emitting element No. 11 and improve the luminance by removing the protrusions of the light-emitting layer 4.
本発明は、上記問題点を解決するために薄膜ＥＬ発光素
子において、
発光層を形成する工程と、
この発光層の上に第１の上部絶縁層を形成する工程と、
この第１の上部絶縁層に生じたピンホールを介して発光
層の突起をエツチングで除去する工程と、その後前記第
１の上部絶縁層の上に第２の上部絶縁層を形成する工程
と、
からなる手段を講じたものである。In order to solve the above-mentioned problems, the present invention provides a thin film EL light emitting device that includes the steps of: forming a light emitting layer; forming a first upper insulating layer on the light emitting layer; and forming a first upper insulating layer on the light emitting layer. The method includes the following steps: removing the protrusion of the light emitting layer by etching through the pinhole formed in the layer, and then forming a second upper insulating layer on the first upper insulating layer. It is something.
以下、図面を用いて本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail using the drawings.
第１図は本発明に係る１１発光素子の製造方法を説明す
るための図である。本発明で得られる１１発光素子の構
成は第３図に示した構成とほぼ同じであるが、上部絶縁
層５の構成と形成方法が従来例と異なるのみである。FIG. 1 is a diagram for explaining a method of manufacturing 11 light emitting elements according to the present invention. The structure of the light emitting device No. 11 obtained by the present invention is almost the same as the structure shown in FIG. 3, but the only difference from the conventional example is the structure and formation method of the upper insulating layer 5.
第１図（１）〜（３）は、第３図における発光層４とそ
の上に形成される上部絶縁層５の部分のみを描いたもの
である。第１図には図示していないが、もちろん本発明
においても、第３図に示す透明基板１と下部透明電極２
と下部絶縁層３と上部電極６は設けられている。1 (1) to (3) depict only the light emitting layer 4 and the upper insulating layer 5 formed thereon in FIG. 3. Although not shown in FIG. 1, the transparent substrate 1 and lower transparent electrode 2 shown in FIG.
A lower insulating layer 3 and an upper electrode 6 are provided.
本発明においては、発光母材と発光中心材とを均一に混
ぜて構成したペレットに例えば電子ビームを照射してこ
れを加熱させ、発光母材と発光中心材を蒸気として飛ば
して、第３図に示す下部絶縁層３の上に発光層４を形成
する。この発光層４の形成方法は従来と同じであり、突
起８を有する。In the present invention, a pellet composed of a uniform mixture of a luminescent base material and a luminescent center material is heated by, for example, irradiating an electron beam, and the luminescent base material and luminescent center material are blown off as vapor. A light emitting layer 4 is formed on the lower insulating layer 3 shown in FIG. The method of forming this light emitting layer 4 is the same as the conventional method, and has projections 8.
次に、第１図（１）に示すように突起８を有した発光層
４の上に、第１の上部絶縁１５ａを例えばＹ２Ｏ３等を
スパッタすることにより形成する。発光層４には突起８
があるので、第１の上部絶縁層５ａにはピンホール７が
生じる。ここまでは従来例と同じである。しかし、次の
工程から、従来と異なる。Next, as shown in FIG. 1(1), a first upper insulator 15a is formed on the light emitting layer 4 having the projections 8 by sputtering Y2O3 or the like. The light emitting layer 4 has protrusions 8
Therefore, a pinhole 7 is generated in the first upper insulating layer 5a. The process up to this point is the same as the conventional example. However, the next step is different from conventional methods.
本発明では、第１の上部絶縁層５ａのピンホール７を介
して例えば酸系のエツチング液、例えばＨＣｌ等で発光
層４の突起８を化学エツチングして除去する（第１図（
２））。In the present invention, the protrusions 8 of the light-emitting layer 4 are removed by chemical etching using, for example, an acid-based etching solution such as HCl through the pinholes 7 of the first upper insulating layer 5a (see FIG. 1).
2)).
第１の上部絶縁層５ａの膜厚は２０００Ａ程度であるた
め、第２図のように発光層４の底面にまでオーバーエツ
チングしたとしても、被エツチング部９ｂの幅は、膜厚
程度にすることが可能であり、１１発光素子をディスプ
レイ等に応用した場合でも、１ビクセル（１画素・・・
約Ｑ、３ｍｍ角）に比べ、被エツチング部９ｂの幅は充
分無視できる大きさである。Since the film thickness of the first upper insulating layer 5a is approximately 2000A, even if the bottom surface of the light emitting layer 4 is over-etched as shown in FIG. 2, the width of the etched portion 9b should be approximately the same as the film thickness. Even if 11 light emitting elements are applied to a display etc., 1 pixel (1 pixel...
The width of the etched portion 9b is sufficiently negligible compared to the width of the etched portion 9b.
その後、第１の上部絶縁層５ａの上に例えばＴａ２０５
等をスパッタすることにより第２の上部絶縁層５ｂを形
成する（第１図（３））。即ち、本発明では、第３図に
示す上部絶縁層５を第１と第２の絶縁層５ａ、 ５ｂか
らなる複合膜として形成している。After that, for example, a Ta205 layer is formed on the first upper insulating layer 5a.
A second upper insulating layer 5b is formed by sputtering (FIG. 1(3)). That is, in the present invention, the upper insulating layer 5 shown in FIG. 3 is formed as a composite film consisting of the first and second insulating layers 5a and 5b.
その後、第２の上部絶縁層５ｂの上に上部電極６（第１
図では図示せず）を形成して１１発光素子を作成する。Thereafter, the upper electrode 6 (the first
(not shown in the figure) to create 11 light emitting elements.
なお、上述ではピンホールのエツチング工程を６一
ウェットプロセスの例で説明したが、ドライプロセス（
リアクティブ・イオンエッチ等）でも良い。In addition, although the pinhole etching process was explained above using an example of a wet process, a dry process (
Reactive ion etching, etc.) may also be used.
また、上部絶縁層を複合膜５ａ、 ５ｂで説明したが、
両者はＴａ２０５等の同一材料でも良いし、又はＹ２０
３ ＋Ｔａ２０５等の巽質材料でも良い。In addition, although the upper insulating layer was explained using composite films 5a and 5b,
Both may be made of the same material such as Ta205, or Y20
3 + A solid material such as Ta205 may also be used.
また、第１図では単色のＥＬ発光素子の例で説明したが
、発光層４を２色以上積層した多色発光ＥＬ素子として
も本発明は成立する。Further, in FIG. 1, an example of a monochromatic EL light-emitting element has been described, but the present invention is also applicable to a multi-color light-emitting EL element in which light-emitting layers 4 of two or more colors are laminated.
（本発明の効果〕
・以上述べたように、本発明によれば、次の効果が得ら
れる。(Effects of the present invention) - As described above, according to the present invention, the following effects can be obtained.
■ 発光層の突起を除去することにより、耐電圧が向上
し、輝度−電圧特性が向上する。(2) By removing the protrusions of the light emitting layer, the withstand voltage is improved and the brightness-voltage characteristics are improved.
■ 突起部分のみをエツチングで除去できる。■ Only the protruding parts can be removed by etching.
■ 発光層を機械研磨等で平坦化するより平坦化が容易
である。■ Flattening the light emitting layer is easier than by mechanical polishing or the like.
■ 上部絶縁層を複合膜にすることにより、膜応力が緩
和され膜の密着性が向上する。■ By making the upper insulating layer a composite film, film stress is alleviated and film adhesion is improved.
第１図は本発明に係るＥＬ発光素子の製造方法を説明す
るための図、第２図は本発明においてオーバーエツチン
グした場合を示す図、第３図と第４図は従来例を示す図
である。
４・・・発光層、５ａ・・・第１の上部絶縁層、５ｂ・
・・第２の上部絶縁層、７・・・ピンホール、８・・・
突起。
第４図
り土り艙輯層
１忙本屑FIG. 1 is a diagram for explaining the method of manufacturing an EL light emitting device according to the present invention, FIG. 2 is a diagram showing a case where overetching is performed in the present invention, and FIGS. 3 and 4 are diagrams showing a conventional example. be. 4... Light emitting layer, 5a... First upper insulating layer, 5b.
...Second upper insulating layer, 7...Pinhole, 8...
protrusion. 4th plan earthworks layer 1 busy book waste
Claims (1)
層の突起をエッチングで除去する工程と、その後前記第
１の上部絶縁層の上に第２の上部絶縁層を形成する工程
と、 を用いたことを特徴とするＥＬ発光素子の製造方法。[Claims] In a thin film EL light emitting device, a step of forming a light emitting body, a step of forming a first upper insulating layer on the light emitting layer, and a pinhole formed in the first upper insulating layer. An EL light-emitting device characterized by using the steps of: removing the protrusion of the light-emitting layer by etching through the step; and then forming a second upper insulating layer on the first upper insulating layer. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140551A JPS63304595A (en) | 1987-06-04 | 1987-06-04 | Manufacture of el luminous element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140551A JPS63304595A (en) | 1987-06-04 | 1987-06-04 | Manufacture of el luminous element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63304595A true JPS63304595A (en) | 1988-12-12 |
Family
ID=15271304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62140551A Pending JPS63304595A (en) | 1987-06-04 | 1987-06-04 | Manufacture of el luminous element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63304595A (en) |
-
1987
- 1987-06-04 JP JP62140551A patent/JPS63304595A/en active Pending
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