JPS63303503A - Light receiving circuit - Google Patents

Light receiving circuit

Info

Publication number
JPS63303503A
JPS63303503A JP62140579A JP14057987A JPS63303503A JP S63303503 A JPS63303503 A JP S63303503A JP 62140579 A JP62140579 A JP 62140579A JP 14057987 A JP14057987 A JP 14057987A JP S63303503 A JPS63303503 A JP S63303503A
Authority
JP
Japan
Prior art keywords
circuit
frequency
signal
light
negative feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62140579A
Other languages
Japanese (ja)
Inventor
Katsuhiko Oimura
老邑 克彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP62140579A priority Critical patent/JPS63303503A/en
Publication of JPS63303503A publication Critical patent/JPS63303503A/en
Pending legal-status Critical Current

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  • Amplifiers (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To receive desired signal light with an excellent SN ratio by adding a resonance circuit to resonate with a special frequency and amplify selectively the electric signal of the frequency to a negative feed-back amplifier circuit. CONSTITUTION:When the light, in which luminance modulation is executed at a prescribed frequency (f), is propagated in a space and received by a semiconductor light- receiving device 1, the light receiving device 1 converts the light receiving signal to the electric signal and outputs it to a negative feed-back amplifier circuit 2. In this case, a signal component and a disturbance light component are included to an output current ip of the light receiving device 1. At a feed-back circuit 3 of the circuit 2, a resonance circuit 4 to make a resonance frequency f0 coincident to the frequency 1 is provided, the circuit 4 is resonated by the resonance frequency f0 and an impedance Z is significantly increased. As the result, for the circuit 4, the impedance Z is higher to the signal light component of the frequency (f) and the Z is lower to the disturbance light component of other frequency. For this reason, in the circuit 2, the signal light component of the frequency (f) coincident to the resonance frequency f0 is selected, on the other hand, the disturbance light component of the frequency except it is attenuated and the signal light of the excellent SN ratio is outputted.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 この発明は、例えば空間中を伝播してくる信号光を受信
するための光受信回路に関連し、殊にこの発明は、優れ
たSN比で信号光を受信する光受信回路を提供するもの
である。
[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to, for example, an optical receiving circuit for receiving signal light propagating in space. The present invention provides an optical receiving circuit that receives signal light.

〈従来の技術〉 従来この種光受信回路として、第4図に示す如く、フォ
トダイオードのような半導体受光器21に負帰還型増幅
回路22を接続したものが知られている。この負帰還型
増幅回路22は、演算増幅器23に負帰還抵抗24を設
けた構成のものであって、例えば第5図のように回路構
成される。同図の回路は、2個のトランジスタ25.2
6を含み、後段のトランジスタ26の出力端と前段のト
ランジスタ25の入力端との間に負帰還抵抗25が接続
しである。
<Prior Art> As shown in FIG. 4, a conventional optical receiving circuit of this kind is known in which a negative feedback amplifier circuit 22 is connected to a semiconductor light receiver 21 such as a photodiode. This negative feedback type amplifier circuit 22 has a configuration in which an operational amplifier 23 is provided with a negative feedback resistor 24, and is configured as shown in FIG. 5, for example. The circuit in the figure consists of two transistors 25.2
6, and a negative feedback resistor 25 is connected between the output terminal of the transistor 26 in the subsequent stage and the input terminal of the transistor 25 in the previous stage.

この光受信回路において、半導体受光器21の出力電流
を’?+負帰還抵抗24の抵抗値をRfとすると、演算
増幅器23の入力インピ−ダンスは通常高いから、電流
i、の大部分は負帰還抵抗24を流れて、出力端子27
には12×Rfの出力電圧v0が現れる。
In this optical receiving circuit, the output current of the semiconductor optical receiver 21 is '? + If the resistance value of the negative feedback resistor 24 is Rf, the input impedance of the operational amplifier 23 is usually high, so most of the current i flows through the negative feedback resistor 24 and is output to the output terminal 27.
An output voltage v0 of 12×Rf appears.

〈発明が解決しようとする問題点〉 ところで信号光を空間中へ発射して伝送する光空間伝送
方式では、この信号光と外乱光とを区別できるようにす
るため、信号を所定の周波数で輝度変調して送信する方
法が採用される。
<Problems to be Solved by the Invention> By the way, in the optical space transmission method in which signal light is emitted into space and transmitted, in order to be able to distinguish between the signal light and disturbance light, it is necessary to change the brightness of the signal at a predetermined frequency. A method of modulating and transmitting is adopted.

ところが前記した従来の光受信回路の場合、所定の周波
数以外の周波数成分も同じ増幅率で増幅してしまうため
、そのSN比が悪くなるという問題がある。
However, in the case of the conventional optical receiving circuit described above, frequency components other than the predetermined frequency are also amplified with the same amplification factor, so there is a problem that the S/N ratio becomes poor.

この発明は、上記問題に着目してなされたもので、特定
の周波数成分だけを選択して増幅するよう構成すること
により、所望の信号光を優れたSN比で受信できる新規
な光受信回路を提供することを目的とする。
This invention was made with attention to the above-mentioned problem, and provides a novel optical receiving circuit that can receive a desired signal light with an excellent signal-to-noise ratio by selecting and amplifying only specific frequency components. The purpose is to provide.

〈問題点を解決するための手段〉 上記目的を達成するため、この発明では、光を受光して
電気信号に変換するための半導体受光器と、前記電気信
号を増幅して出力信号を取り出すための負帰還型増幅回
路とを備えた光受信回路において、前記負帰還型増幅回
路には、特定の周波数で共振してその周波数の電気信号
を選択的に増幅させるための共振回路を付加することに
した。
<Means for Solving the Problems> In order to achieve the above object, the present invention includes a semiconductor photoreceptor for receiving light and converting it into an electrical signal, and a semiconductor photodetector for amplifying the electrical signal and extracting an output signal. In the optical receiving circuit comprising a negative feedback amplifier circuit, the negative feedback amplifier circuit is further provided with a resonant circuit that resonates at a specific frequency and selectively amplifies the electrical signal of that frequency. I made it.

く作用〉 所定の周波数で輝度変調された光が空間中を伝播して半
導体受光器で受光されると、半導体受光器は受光信号を
電気信号に変換して負帰還型増幅回路へ出力する。この
負帰還型増幅回路には共振回路が付加されており、この
共振回路は前記所定の周波数で共振してそのインピーダ
ンスが変化するようその共振周波数が設定されている。
Effect> When light whose brightness is modulated at a predetermined frequency propagates through space and is received by a semiconductor photodetector, the semiconductor photodetector converts the received light signal into an electrical signal and outputs it to a negative feedback amplifier circuit. A resonant circuit is added to this negative feedback type amplifier circuit, and the resonant frequency of this resonant circuit is set so that it resonates at the predetermined frequency and its impedance changes.

その結果、共振回路は負帰還型増幅回路に対し前記所定
の周波数の電気信号を選択的に増幅させるよう機能する
ことになり、これにより前記周波数以外の外乱光成分が
除かれ、信号光成分のみが選択して取り出される。この
ため所望の信号光が優れたSN比で受信されることにな
る。
As a result, the resonant circuit functions to selectively amplify the electric signal of the predetermined frequency with respect to the negative feedback amplifier circuit, thereby removing disturbance light components of frequencies other than the above, and only the signal light component. is selected and retrieved. Therefore, the desired signal light is received with an excellent signal-to-noise ratio.

〈実施例〉 第1図はこの発明の一実施例にかかる光受信回路を示す
もので、半導体受光器1と、この半導体受光器1に直列
接続され7た負帰還型増幅回路2と、この負帰還型増幅
回路2の帰還回路3に負帰還抵抗に代えて設けられた共
振回路4とで構成されている。
Embodiment FIG. 1 shows an optical receiving circuit according to an embodiment of the present invention, which includes a semiconductor optical receiver 1, a negative feedback amplifier circuit 2 connected in series with the semiconductor optical receiver 1, and a negative feedback amplifier circuit 7 connected in series with the semiconductor optical receiver 1. The negative feedback amplifier circuit 2 includes a feedback circuit 3 and a resonant circuit 4 provided in place of a negative feedback resistor.

前記半導体受光器1は、空間中を伝播してくる光を受光
し、これを光電変換して電気信号を得るためものである
。図示例では半導体受光器1としてフォトダイオードを
用いであるが、これに限らず、フォトトランジスタやC
dSなどの他の半導体素子を用いることも可能である。
The semiconductor light receiver 1 is for receiving light propagating in space and photoelectrically converting it to obtain an electric signal. In the illustrated example, a photodiode is used as the semiconductor light receiver 1, but it is not limited to this, and a phototransistor or C
It is also possible to use other semiconductor devices such as dS.

前記負帰還型増幅回路2は、演算増幅器5と帰還回路3
とで構成され、前記電気信号を増幅して出力信号を取り
出すためのものである。いま半導体受光器1の出力電流
をtP+帰還回路3のインピーダンスをZとすると、負
帰還型増幅回路2の出力電圧v0はつぎの0式で与えら
れる。
The negative feedback amplifier circuit 2 includes an operational amplifier 5 and a feedback circuit 3.
It is configured to amplify the electrical signal and extract an output signal. Now, assuming that the output current of the semiconductor photodetector 1 is tP+the impedance of the feedback circuit 3 is Z, the output voltage v0 of the negative feedback amplifier circuit 2 is given by the following equation.

VO=ip XZ  −−・、■ 上記帰還回路3に設けられた共振回路4は、コンデンサ
6とインダクタ7とが並列接続された並列共振回路であ
って、そのインピーダンス2は、第2図+1)に示す如
く、共振周波数f0で高く、共振周波数f、より離れる
と低くなる。
VO=ip As shown in the figure, the resonance frequency is high at f0, and becomes lower as the resonance frequency f is further away.

ここでは共振周波数f、は、空間伝送されてくる信号光
の変調周波数に一致させである。
Here, the resonant frequency f is made to match the modulation frequency of the spatially transmitted signal light.

第3図は、この発明の他の実施例を示しており、フォト
ダイオードより成る半導体受光器1に共振回路4を介し
て負帰還型増幅回路2を接続したものである。この実施
例の場合、共振回路4はインダクタ7とコンデンサ6と
が直列接続された直列共振回路であって、そのインピー
ダンスZは共振周波数f0で低く、共振周波数f0より
離れると高くなる。なお図中、8は帰還回路3に設けら
れた負帰還抵抗であり、また9は半導体受光器1に対し
逆バイアスをかけるための抵抗である。
FIG. 3 shows another embodiment of the invention, in which a negative feedback amplifier circuit 2 is connected to a semiconductor light receiver 1 made of a photodiode via a resonant circuit 4. In the case of this embodiment, the resonant circuit 4 is a series resonant circuit in which an inductor 7 and a capacitor 6 are connected in series, and its impedance Z is low at the resonant frequency f0 and becomes high when the distance is away from the resonant frequency f0. In the figure, 8 is a negative feedback resistor provided in the feedback circuit 3, and 9 is a resistor for applying a reverse bias to the semiconductor photodetector 1.

しかして第1図に示す実施例において、所定の周波数f
で輝度変調された光が空間中を伝播して半導体受光器1
で受光されると、半導体受光器1はその受光信号を電気
信号に変換して負帰還型増幅回路2へ出力する。この場
合に半導体受光器1の出力電流1.には信号光成分と外
乱光成分とが含まれている。負帰還型増幅回路2の帰還
回路3には、その共振周波数f0を前記周波数fに一敗
させた共振回路4が設けてあり、この共振回路4はその
共振周波数f0で共振してそのインピーダンスZが著し
く高くなる(第2図(1)参照)。その結果、この共振
回路4は周波数fの信号光成分に対してはそのインピー
ダンスZは高く、また他の周波数の外乱光成分に対して
はそのインピーダンスZは低いものとなる。
Therefore, in the embodiment shown in FIG.
The brightness-modulated light propagates through space and reaches the semiconductor photodetector 1.
When the light is received by the semiconductor light receiver 1, the semiconductor light receiver 1 converts the light reception signal into an electrical signal and outputs it to the negative feedback amplifier circuit 2. In this case, the output current of the semiconductor photodetector 1 is 1. includes a signal light component and a disturbance light component. The feedback circuit 3 of the negative feedback amplifier circuit 2 is provided with a resonant circuit 4 whose resonant frequency f0 is set to the frequency f, and this resonant circuit 4 resonates at the resonant frequency f0 and its impedance Z becomes significantly high (see Figure 2 (1)). As a result, this resonant circuit 4 has a high impedance Z for the signal light component of the frequency f, and a low impedance Z for the disturbance light components of other frequencies.

か(て負帰還型増幅回路2の出力電圧v0は前記0式で
与えられるから、この負帰還型増幅回路2において共振
周波数f0に一致する周波数fの信号光成分が選択的に
増幅され、一方それ以外の周波数の外乱光成分は減衰さ
れる結果となり(第2図(2)参照)、出力端子10に
は所望の信号光が優れたSN比で取り出されることにな
る。
(Since the output voltage v0 of the negative feedback amplifier circuit 2 is given by the above equation 0, the signal light component of the frequency f that coincides with the resonance frequency f0 is selectively amplified in the negative feedback amplifier circuit 2, and on the other hand, As a result, disturbance light components of other frequencies are attenuated (see FIG. 2 (2)), and a desired signal light is outputted to the output terminal 10 with an excellent signal-to-noise ratio.

第3図に示す実施例の場合は、共振回路4はその共振周
波数f、で共振してそのインピーダンスZが著しく低く
なる。その結果、この共振回路4は周波数fの信号光成
分に対してはそのインピーダンスZは低(、また他の周
波数の外乱光成分に対してはそのインピーダンスZは高
いものとなる。このため信号光成分は共振回路4を流れ
易く、一方外乱光成分は共振回路4を流れにくくなるた
め、負帰還型増幅回路2は信号光成分を選択的に増幅す
る結果となり、出力端子10には所望の信号光が優れた
SN比で取り出される。
In the case of the embodiment shown in FIG. 3, the resonant circuit 4 resonates at its resonant frequency f, and its impedance Z becomes extremely low. As a result, this resonant circuit 4 has a low impedance Z for the signal light component of the frequency f (and a high impedance Z for the disturbance light components of other frequencies. The component easily flows through the resonant circuit 4, while the disturbance light component hardly flows through the resonant circuit 4. Therefore, the negative feedback amplifier circuit 2 selectively amplifies the signal light component, and the output terminal 10 receives the desired signal. Light is extracted with excellent signal to noise ratio.

〈発明の効果〉 この発明は上記の如く、半導体受光器で得た電気信号を
負帰還型増幅回路で増幅して出力信号を取り出す光受信
回路において、前記負帰還型増幅回路に特定の周波数で
共振してその周波数の電気信号を選択的に増幅させるた
めの共振回路を付加したから、前記特定の周波数以外の
外乱光成分を減衰させて、特定周波数の信号光成分のみ
を選択して取り出すことができ、所望の信号光を優れた
SN比で受信できるなど、発明目的を達成した顕著な効
果を奏する。
<Effects of the Invention> As described above, the present invention provides an optical receiving circuit that amplifies an electrical signal obtained by a semiconductor optical receiver using a negative feedback amplifier circuit and extracts an output signal. Since a resonant circuit is added to resonate and selectively amplify the electrical signal of that frequency, it is possible to attenuate disturbance light components other than the specific frequency and selectively extract only the signal light component of the specific frequency. The present invention achieves remarkable effects such as being able to receive desired signal light with an excellent signal-to-noise ratio.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例にかかる光受信回路の電気
回路図、第2図は周波数と共振回路のインピーダンスと
の関係および周波数と負帰還型増幅回路の出力電圧との
関係を示す特性図、第3図は他の実施例にかかる光受信
回路の電気回路図、第4図および第5図は従来の光受信
回路の電気回路図である。 1・・・・半導体受光器 2・・・・負帰還型増幅回路 3、・・・帰還回路    4・・・・共振回路特許 
出 願人  立石電機株式会社 代理人 弁理士  鈴 木 由 充 * 3>i   イセいlミオ色イ14ho、っ、る光
べtイ卸路の電価)0路L4骨りに)pンl イ4払す
光受イ富r 1i S(トσ)1ヒ1ヒi)区名hln
→5)B 2力色桐11.碕−tイ占日に4.AビC1ら64A/
・・・ 半A1イ、1−・之λし2唱−2−・・・釦帰
i匍橘田路 3−−一婦1回路 4−0−夾1辰回路
FIG. 1 is an electrical circuit diagram of an optical receiver circuit according to an embodiment of the present invention, and FIG. 2 is a characteristic showing the relationship between frequency and impedance of a resonant circuit and the relationship between frequency and output voltage of a negative feedback amplifier circuit. 3 are electrical circuit diagrams of an optical receiving circuit according to another embodiment, and FIGS. 4 and 5 are electrical circuit diagrams of a conventional optical receiving circuit. 1... Semiconductor photoreceiver 2... Negative feedback amplifier circuit 3,... Feedback circuit 4... Resonant circuit patent
Applicant: Tateishi Electric Co., Ltd. Agent, Patent Attorney: Yu Mitsuru Suzuki i4 pay light receiving i wealth r 1i S(toσ)1hi1hii) Ward name hln
→5) B 2-power paulownia 11. 4. AbiC1 et al.64A/
...Half A1 I, 1-・之λshi 2 chant-2-...button return i Wakuchitaji 3--ichifu 1 circuit 4-0-夾 1 辰circuit

Claims (1)

【特許請求の範囲】 [1]光を受光して電気信号に変換するための半導体受
光器と、前記電気信号を増幅して出力信号を取り出すた
めの負帰還型増幅回路とを備えた光受信回路において、 前記負帰還型増幅回路には、特定の周波数で共振してそ
の周波数の電気信号を選択的に増幅させるための共振回
路が付加されて成る光受信回路。 [2]前記半導体受光器は、フォトダイオードである特
許請求の範囲第1項記載の光受信回路。 [3]前記共振回路は、負帰還型増幅回路の帰還回路に
設けられたLC並列共振回路である特許請求の範囲第1
項記載の光受信回路。 [4]前記共振回路は、負帰還型増幅回路の入力側に直
列接続されたLC直列共振回路である特許請求の範囲第
1項記載の光受信装置。
[Scope of Claims] [1] An optical receiver comprising a semiconductor photodetector for receiving light and converting it into an electrical signal, and a negative feedback amplifier circuit for amplifying the electrical signal and extracting an output signal. An optical receiver circuit, wherein the negative feedback amplifier circuit is further provided with a resonant circuit that resonates at a specific frequency and selectively amplifies an electrical signal at that frequency. [2] The optical receiver circuit according to claim 1, wherein the semiconductor light receiver is a photodiode. [3] Claim 1, wherein the resonant circuit is an LC parallel resonant circuit provided in a feedback circuit of a negative feedback amplifier circuit.
Optical receiver circuit described in section. [4] The optical receiving device according to claim 1, wherein the resonant circuit is an LC series resonant circuit connected in series to the input side of a negative feedback amplifier circuit.
JP62140579A 1987-06-04 1987-06-04 Light receiving circuit Pending JPS63303503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62140579A JPS63303503A (en) 1987-06-04 1987-06-04 Light receiving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62140579A JPS63303503A (en) 1987-06-04 1987-06-04 Light receiving circuit

Publications (1)

Publication Number Publication Date
JPS63303503A true JPS63303503A (en) 1988-12-12

Family

ID=15271974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62140579A Pending JPS63303503A (en) 1987-06-04 1987-06-04 Light receiving circuit

Country Status (1)

Country Link
JP (1) JPS63303503A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715014A1 (en) * 1994-01-07 1995-07-13 Elgelec Sa Modulated infrared receiver circuit for access authorisation badge
EP0704994A1 (en) * 1994-09-30 1996-04-03 AT&T Corp. Photodetector circuit with actively damped tuned input
JP2007202147A (en) * 2006-01-18 2007-08-09 Marvell World Trade Ltd Nested transimpedance amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715014A1 (en) * 1994-01-07 1995-07-13 Elgelec Sa Modulated infrared receiver circuit for access authorisation badge
EP0704994A1 (en) * 1994-09-30 1996-04-03 AT&T Corp. Photodetector circuit with actively damped tuned input
JP2007202147A (en) * 2006-01-18 2007-08-09 Marvell World Trade Ltd Nested transimpedance amplifier

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