JPS63299357A - Substrate mounting board - Google Patents
Substrate mounting boardInfo
- Publication number
- JPS63299357A JPS63299357A JP13566487A JP13566487A JPS63299357A JP S63299357 A JPS63299357 A JP S63299357A JP 13566487 A JP13566487 A JP 13566487A JP 13566487 A JP13566487 A JP 13566487A JP S63299357 A JPS63299357 A JP S63299357A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mounting table
- cooling
- substrate mounting
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 238000001816 cooling Methods 0.000 abstract description 28
- 238000005259 measurement Methods 0.000 abstract description 25
- 235000012431 wafers Nutrition 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) この発明は、基板載置台に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a substrate mounting table.
(従来の技術)
基板例えば半導体ウェハを製造する工程において、製造
されたウェハの電気的特性を検査測定するに際し、プロ
ーブ装置で実行している。又、半導体ウェハは、品種毎
に検査測定法が異なり、品種によっては、半導体ウェハ
を加熱して検査測定を実行するものがある。この半導体
ウェハの加熱は、通常半導体ウェハを載置する載置台に
加熱機構を設けて対処していた。又、加熱した載置台で
検査測定を実行後常温での検査測定を実行するには、載
置台を冷却しなければならない。(Prior Art) In the process of manufacturing a substrate such as a semiconductor wafer, a probe device is used to inspect and measure the electrical characteristics of the manufactured wafer. Further, inspection and measurement methods for semiconductor wafers differ depending on the type of semiconductor wafer, and depending on the type, the inspection and measurement may be performed by heating the semiconductor wafer. This heating of the semiconductor wafer has usually been handled by providing a heating mechanism on the mounting table on which the semiconductor wafer is mounted. Furthermore, in order to perform inspection and measurement at room temperature after performing inspection and measurement on a heated mounting table, the mounting table must be cooled.
上記のように、加熱機構および冷却機構を有している載
置台は特開昭55−44931号公報で周知である。As mentioned above, a mounting table having a heating mechanism and a cooling mechanism is well known from Japanese Patent Application Laid-Open No. 55-44931.
(発明が解決しようとする問題点)
しかしながら、上記のような加熱・冷却機構を有する載
置台では、構造が複雑になり載置台自体が大型化してし
まい、さらに、すでに所有する載置台を利用できないた
め、高価な載置台を新たに製造する必要があり、汎用性
に欠けていた。(Problems to be Solved by the Invention) However, with a mounting table having a heating/cooling mechanism as described above, the structure becomes complicated and the mounting table itself becomes large, and furthermore, it is not possible to use an existing mounting table. Therefore, it was necessary to newly manufacture an expensive mounting table, and it lacked versatility.
この発明は、上記点を改善するためになされたもので、
載置台を容易に冷却可能とし、冷却時間を短縮する効果
を得る基板載置台を提供するものである。This invention was made to improve the above points,
The present invention provides a substrate mounting table that allows the mounting table to be easily cooled and has the effect of shortening the cooling time.
(問題点を解決するための手段)
この発明は、基板載置台に内設したエア流通路にエアを
流通させて上記基板載置台を冷却することを特徴とする
基板載置台を得るものである。(Means for Solving the Problems) The present invention provides a substrate mounting table characterized in that the substrate mounting table is cooled by circulating air through an air flow path provided inside the substrate mounting table. .
(作 用)
基板載置台に内設したエア流通路にエアを流通させて上
記基板載置台を冷却することにより、載置台を容易に冷
却可能とし、冷却時間を短縮することを可能とする効果
が得られる。(Function) The effect of making it possible to easily cool the substrate mounting table and shorten the cooling time by cooling the substrate mounting table by circulating air through the air flow path installed inside the substrate mounting table. is obtained.
(実施例)
次に本発明基板載置台をプローブ装置に装着した一実施
例を図面を参照して説明する。(Example) Next, an example in which the substrate mounting table of the present invention is mounted on a probe device will be described with reference to the drawings.
このプローブ装置■は、第2図に示すように。This probe device (2) is as shown in FIG.
基板例えば半導体ウェハ■をウェハカセット■に所定の
間隔を設けて25枚設置する。このウェハ■を収納した
カセット■をカセット収納部(へ)に搬入する。この収
納部(イ)からウェハ■をバキュームピンセット(図示
せず)などで一枚づつ取り出し。Twenty-five substrates, such as semiconductor wafers (2), are placed in a wafer cassette (2) at predetermined intervals. The cassette ■ containing this wafer ■ is carried into the cassette storage section. Take out the wafers ■ one by one from this storage part (a) using vacuum tweezers (not shown).
ウェハの予備位置決めステージ■に搬送する。この予備
位置決めステージ(ハ)でウェハ■のオリフラなどを基
準に精度±1°位まで予備位置決めした後、ウェハ■を
載置台例えば測定ステージ■に搬送し真空吸着機構でウ
ェハ■の裏面を吸着保持する。この搬送はウェハ■の裏
面を真空吸着して搬送をする。このように測定ステージ
(0に搬送されたウェハ■をさらに高精度に位置決めす
るために。Transfer the wafer to the preliminary positioning stage ■. After pre-positioning the wafer ■ to an accuracy of ±1° using this preliminary positioning stage (c) based on the orientation flat of the wafer ■, the wafer ■ is transferred to a mounting table, such as a measurement stage ■, and the back side of the wafer ■ is held by suction using a vacuum suction mechanism. do. This transportation is carried out by vacuum suctioning the back surface of the wafer (2). In order to position the wafer (2) transferred to the measurement stage (0) with even higher precision.
CCDカメラを使ったパターン認識機構又はレーザによ
る認識機構が適用される。この正確な位置決め後、プロ
ーブカード■のプローブ針(8)先端に自動的に下方か
らウェハ■を上昇させて、ソフトタッチさせウェハ(2
)の電気特性を測定する。A pattern recognition mechanism using a CCD camera or a recognition mechanism using a laser is applied. After this accurate positioning, the wafer ■ is automatically raised from below to the tip of the probe needle (8) of the probe card ■, and the wafer (2) is touched softly.
) to measure the electrical properties of the
この測定に際し、ウェハの品種によってはウェハ■を加
熱状態に設定し測定する必要がある。このウェハ■の加
熱は、ウェハ■を載置した測定ステージ0を加熱し、こ
の測定ステージ■からウェハ■への熱伝導を利用して行
なう。測定ステージ0の加熱は、測定ステージ0に設け
られた加熱機構0)で例えば150℃位まで加熱可能で
ある。次に、加熱状態でウェハ■の測定終了後、常温状
態例えば25℃位でウェハ■を測定する場合、加熱状態
にある測定ステージ0を冷却して常温状態にもどす必要
がある。この冷却は、例えば上記真空吸着機構を利用し
て行なう。真空吸着機構は、ウェハ■を載置する載置面
(10)にホール(11)を設け、このホール(11)
に対応したエア流通路(12)を載置台例えば測定ステ
ージ0に内設して、エア流通路(12)とバキューム機
構(13)を接続したものである。この真空吸着機構を
冷却機構に流用する。すなわち、測定ステージ(0に内
設されたエア流通路からのチューブ(14)と、バキュ
ーム機構(13)からのチューブ(15)と、エア送出
機構(16)からのチューブ(17)とを切換弁例えば
電磁弁(18)に3ボート状態で接続する。ここで電磁
弁(18)を動作させることにより真空吸着機構と冷却
機構を切換えて使用できる。When performing this measurement, depending on the type of wafer, it is necessary to set the wafer (1) to a heated state and perform the measurement. The heating of the wafer (2) is carried out by heating the measurement stage 0 on which the wafer (2) is placed, and utilizing heat conduction from the measurement stage (2) to the wafer (2). The measurement stage 0 can be heated to, for example, about 150° C. by a heating mechanism 0) provided on the measurement stage 0. Next, after the measurement of the wafer 1 in the heated state is completed, when measuring the wafer 2 at room temperature, for example, about 25° C., it is necessary to cool the measurement stage 0 in the heated state to return it to the room temperature. This cooling is performed using, for example, the vacuum suction mechanism described above. The vacuum suction mechanism has a hole (11) provided on the mounting surface (10) on which the wafer ■ is placed, and the hole (11)
An air flow path (12) corresponding to the measurement stage 0 is provided inside the mounting table, for example, the measurement stage 0, and the air flow path (12) is connected to a vacuum mechanism (13). This vacuum suction mechanism is used as a cooling mechanism. That is, the tube (14) from the air flow passage installed inside the measurement stage (0), the tube (15) from the vacuum mechanism (13), and the tube (17) from the air delivery mechanism (16) are switched. It is connected to a valve, for example, a solenoid valve (18) in a three-board state.By operating the solenoid valve (18), the vacuum suction mechanism and the cooling mechanism can be switched and used.
次に載置台の動作作用を説明する。Next, the operation of the mounting table will be explained.
基板例えば半導体ウェハ■を載置台例えば測定ステージ
急に載置する。この時ウェハ■の裏面を吸着保持する。A substrate, such as a semiconductor wafer (1), is suddenly placed on a mounting table, such as a measurement stage. At this time, the back side of the wafer (■) is held by suction.
この吸着保持は、測定ステージ(へ)の載置面(10)
に設けられたホール(11)とバキューム機構(13)
が、チューブ(15)と電磁弁(18)とチューブ(1
4)とエア流通路(12)を介して接続されているため
、バキューム機構(13)を作動させホール(11)で
ウェハ■を真空吸着する。この吸着と同時に測定ステー
ジ0に設けられた加熱機構(9)でウェハ■を例えば1
50℃位まで加熱した後、予め定められた動作でウェハ
■の電気的特性の検査測定を実行する。加熱状態でウェ
ハ■を測定後、測定ステージ0を常温状態に設定する。This suction holding is performed on the mounting surface (10) of the measurement stage (toward).
Hole (11) and vacuum mechanism (13) provided in
However, the tube (15), solenoid valve (18) and tube (1
4) through the air flow path (12), the vacuum mechanism (13) is operated to vacuum-suction the wafer (2) in the hole (11). At the same time as this adsorption, a heating mechanism (9) provided on measurement stage 0 is used to heat the wafer
After heating the wafer to about 50° C., the electrical characteristics of the wafer (1) are inspected and measured using predetermined operations. After measuring the wafer (2) in the heated state, the measurement stage 0 is set to the normal temperature state.
この設定は、ウェハ■を測定ステージ0から他の位置へ
搬送した後、電磁弁(18)を切換えて、エア送出機構
(16)からエアをチューブ(17) 、電磁弁(18
)、チューブ(14)を介して測定ステージ■に内設し
たエア流通路(12)内にエアを流通させ、ホール(1
1)からエアを噴出させる。このように測定ステージ(
へ)内にエアを流通させて強制冷却することにより、自
然冷却に比べて冷却時間を短縮することが可能となる。For this setting, after transporting the wafer ■ from measurement stage 0 to another position, switch the solenoid valve (18) and send air from the air delivery mechanism (16) to the tube (17) and the solenoid valve (18).
), air is circulated through the tube (14) into the air flow path (12) installed inside the measurement stage ■, and the hole (1
Air is blown out from 1). In this way, the measurement stage (
By forcing air to flow through the air, the cooling time can be shortened compared to natural cooling.
第3図は上記説明の強制冷却と自然冷却の対比を示した
ものである。載置台の設定温度90℃、室内温度21℃
、載置台常温22.5℃と設定し、縦軸を載置台温度(
℃)、横軸を経過時間(分)とした場合、(A)が自然
冷却、(B)が強制冷却である。載置台を設定温度90
℃から常温22.5℃まで冷却するには、自然冷却(A
)の場合60分以上かかるのに対し、強制冷却(B)の
場合約30分で冷却が終了する。即ち、強制冷却の場合
自然冷却に比べて約半分の時間で載置台を冷却すること
が可能となる。FIG. 3 shows a comparison between forced cooling and natural cooling described above. Setting temperature of the mounting table is 90℃, room temperature is 21℃
, the mounting table room temperature is set to 22.5℃, and the vertical axis is the mounting table temperature (
°C), and the horizontal axis is the elapsed time (minutes), (A) is natural cooling, and (B) is forced cooling. Set the temperature of the mounting table to 90
To cool from ℃ to room temperature 22.5℃, natural cooling (A
), it takes more than 60 minutes, while forced cooling (B) completes cooling in about 30 minutes. That is, in the case of forced cooling, it is possible to cool the mounting table in about half the time compared to natural cooling.
本発明は上記実施例に限定するものではなく、エアは冷
却エアを使用すればより一層冷却時間を短縮できる。さ
らに、エアは載置台内を流通すればよく、必ずしも載置
面からエアを噴出させる必要はない。さらに、載置台内
部にエアを流通させると同時に外部より載置台に向けて
エアを吹付けると、より一層冷却効果がある。The present invention is not limited to the above embodiments, and the cooling time can be further shortened by using cooling air. Furthermore, the air only needs to flow within the mounting table and does not necessarily need to be blown out from the mounting surface. Furthermore, if air is circulated inside the mounting table and air is blown from the outside toward the mounting table at the same time, a further cooling effect can be obtained.
第1図は本発明の一実施例を説明するための基板載置台
の構成図、第2図は第1図の載置台を装着したプローブ
装置の図、第3図は第1図の載置台の冷却時間を示す図
である。
6・・・測定ステージ 9・・・加熱機構11・・・
ホール 12・・・エア流通路16・・・エア
送出機構 18・・・電磁弁特許出願人 東京エレク
トロン株式会社第1図
第2図FIG. 1 is a configuration diagram of a substrate mounting table for explaining one embodiment of the present invention, FIG. 2 is a diagram of a probe device equipped with the mounting table of FIG. 1, and FIG. 3 is a diagram of the mounting table of FIG. 1. It is a figure showing the cooling time of. 6...Measurement stage 9...Heating mechanism 11...
Hall 12... Air flow path 16... Air delivery mechanism 18... Solenoid valve patent applicant Tokyo Electron Ltd. Figure 1 Figure 2
Claims (1)
記基板載置台を冷却することを特徴とする基板載置台。A substrate mounting table characterized in that the substrate mounting table is cooled by circulating air through an air flow path provided inside the substrate mounting table.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13566487A JPH0687475B2 (en) | 1987-05-29 | 1987-05-29 | Substrate table |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13566487A JPH0687475B2 (en) | 1987-05-29 | 1987-05-29 | Substrate table |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63299357A true JPS63299357A (en) | 1988-12-06 |
JPH0687475B2 JPH0687475B2 (en) | 1994-11-02 |
Family
ID=15157053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13566487A Expired - Lifetime JPH0687475B2 (en) | 1987-05-29 | 1987-05-29 | Substrate table |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0687475B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007157821A (en) * | 2005-12-01 | 2007-06-21 | Tokyo Seimitsu Co Ltd | Prober, and prober wafer stage heating method, and prober wafer stage cooling method |
-
1987
- 1987-05-29 JP JP13566487A patent/JPH0687475B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007157821A (en) * | 2005-12-01 | 2007-06-21 | Tokyo Seimitsu Co Ltd | Prober, and prober wafer stage heating method, and prober wafer stage cooling method |
Also Published As
Publication number | Publication date |
---|---|
JPH0687475B2 (en) | 1994-11-02 |
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