JPS63299042A - Ion implantation device - Google Patents

Abstract

PURPOSE:To enable an effective exchange and cleaning of electrodes, and to prevent pollution of an arc chamber within an ion source when electrodes are maintained by joining an electrode and electrode support material by engaged structure and providing an ion source having detachable structure. CONSTITUTION:An electrode part 14 and ion source part 11 are made to separate fixed structure respectively, electrodes 15-17 in the part 14 and an electrode support material 18 are joined by engaged structure, and electrodes 15-17 are made to be freely insertable and removable at the touch of a button. And when the part 11 is maintained, the part 11 is removed, an arc chamber 13 is cleaned, and a discharge filament or the entire part 11 is exchanged. This enables pollution within an ion source to be prevented when maintenance is conducted.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to an ion implantation device.

(Prior art) Hot cathode type ion sources (typically Freeman type) are currently used as ion implanters that accelerate impurity ions generated in an ion source using a high electric field and implant them into a semiconductor substrate.
ion source).

This ion source generates ions in a stable state.
It is widely used as an ion implanter for semiconductor manufacturing equipment because maintenance is relatively easy. Such devices require maintenance such as periodic cleaning of the ion source section, extraction section, acceleration section, etc., and replacement of parts such as the filament.

Figure 4 shows an example of such a conventional Freeman type ion implanter, in which positive ions are extracted with constant energy from the arc chamber ■ in the ion source part ω by the extraction electrode ■, and the accelerating electrode ) is accelerated to its final energy. And part of the analyzer■
Select only the desired ions by mass spectrometry, correct the re-implantation angle by swinging the ions with the magnetic field of the scanning section 0 and the angle collector part 2, and place the desired ions onto the semiconductor wafer 0 on the disk section (c). This is a configuration for implanting ions.

Here, as shown in Fig. 5, the ions are extracted from the ion source section (υ), which has been evacuated to a degree of vacuum of about 1×10''3 Pa, by the extraction electrode ■, and then the accelerating electrode It is accelerated by (to).Also,
The ground electrode (10) prevents divergence of the ion beam.

(Problem to be Solved by the Invention) However, in the conventional ion implantation device described above, the ion source part (■) and each electrode part (■), (io) are considerably heated during operation, so the ions are burnt and contaminated. It is frequently put away, and contamination causes high electric field discharge, making it virtually unusable. Therefore, in this case, stop the ion implantation work and move the ion source section ■, each electrode section ■, (to),
It is necessary to perform replacement and cleaning work such as (10). Therefore, when the equipment for such replacement and cleaning work is out of operation for a long time, it is a big time loss in the current situation where the demand for semiconductors is increasing, and it becomes a problem that leads to a decrease in the operating rate of the equipment.

In addition, the ion source section (■) and each electrode section (■).

The parts in (10) are assembled with screws, and since the screws are removed during the above maintenance work, the removed screws may fall into the equipment and cause a malfunction of the ion source, or a special screwdriver may be required. There were places where the screws could not be turned without doing so due to space constraints. In addition, since the screw itself is heated to high temperatures, even if molybdenum is used as the material, seizure will occur and the threaded part will be damaged.As a result of this structure, time loss in replacement and cleaning work increases, and equipment There was a problem of a decrease in operating efficiency.

In addition, the ion source section (■) and the electrode section (■).

(10) has an integrated structure, so the electrode part (■)).

There was also the problem that the arc chamber (2) inside the ion source section (ω) was contaminated during cleaning (10).

The present invention has been made in response to the above points.

Make each electrode that may be disassembled into a mating structure and remove it.
An object of the present invention is to provide an ion implantation device that can be easily disassembled and can efficiently replace and clean electrodes without contaminating the inside of an ion source during maintenance.

[Structure of the invention]

(Means for solving the problems) The present invention combines an electrode and an electrode holding material with a fitting structure,
It is characterized by comprising an ion source with a detachable structure.

(Function) The ion implantation device of the present invention is equipped with an ion source in which the electrode and the electrode holding material are combined in a fitting structure and made detachable, thereby enabling efficient electrode replacement and cleaning. Furthermore, it is possible to prevent contamination of the arc chamber within the ion source during maintenance of the electrode, and as a result, it is possible to improve the operating efficiency of the apparatus.

(Example) Hereinafter, examples of the ion implantation apparatus of the present invention will be described with reference to the drawings.

An arc chamber (13) made of, for example, molybdenum with a low coefficient of thermal expansion, is provided with a discharge port (12) for discharging positive ions into the ion source part (11) and has a filament (not shown) for discharging thermoelectrons therein. is provided. Separately from the ion source section (11), an electrode section (14) extracts and accelerates positive ions.
) can be maintained from the ion source section (11) side by removing the section. The above electrode part (1
4) Inside each coaxially.

A disc-shaped extraction electrode (15) that extracts ions and has a passage hole for the ion beam (19) at the center; a disc-shaped acceleration electrode (15) that accelerates ions to a desired speed and has a passage hole for the ion beam (19) at the center; 16), a disk-shaped ground electrode (17) which prevents the divergence of the ion beam and has an ion beam hole in the center is connected to the arc chamber (13) in parallel to each other.
) insulating electrode holding material (
18) with a fitting structure.

The ion source is configured in this way.

Next, a method for maintaining the ion source of the ion implanter described above will be explained.

During maintenance of the ion source section (11).

Remove the ion source part (11) and remove the arc chamber (
13) Cleaning, replacing the discharge filament (not shown),
Alternatively, the entire ion source section (11) is replaced; at this time, each electrode in the electrode section (14) is replaced with the ion source section (11).
1) Since it is set so that maintenance can be easily performed from the side, maintenance can be performed at the same time as the maintenance of the ion source section (11), so that maintenance work time can be shortened.

Next, when maintaining the electrode section (14).

First, remove the ion source part (11) and perform maintenance work from the ion source part (11) side. Here, the extraction electrode (15), acceleration electrode (16), ground electrode (17
) are coupled and held with the electrode holding material (18) by the fitting structure shown in FIG. That is, one cylindrical insulating electrode holding material (
18) The protrusion (21) provided at the tip is fitted into the hole (22) provided around the corner of the electrode, for example, the extraction electrode (15). Further, the convex portion (21) is provided with a hole (28) into which a T-shaped fixing pin (26) is inserted, and a fixing pin (26) is fitted into this hole (28). The fitted fixing pin (26) is inserted and fixed into the electrode holding material (18) by the screw (23), and the ball (25) combined with the spring (24) is inserted into the recess (27) of the fixing bottle (26).
), the electrode, for example, the extraction electrode (15
) is fixed to the electrode holding material (18) with one touch. The one-touch connection structure using this mating method allows the extraction electrode (
15), as well as the acceleration electrode (16) and the ground electrode (
It goes without saying that it can also be applied to 17), and
Due to the above fitting structure, each electrode (15), (16), (
17) can be easily inserted and removed from the ion source section (11) side, enabling efficient electrode replacement and cleaning.

Also, by removing the ion source part (11) and cleaning the electrode part (14) from the ion source part (11) side, the arc chamber (13) in the ion source part (11) can be cleaned during electrode cleaning. No more contamination.

In the above embodiment, each electrode was fixed using a fixing bottle (26) or the like at the fitting part between each electrode and the electrode holding material (18), but as in another embodiment shown in FIG. Electrode holding material (1
8) and each electrode is installed at an angle θ, for example, 45° with respect to the horizontal plane, so that the entire outer shape of each electrode forms a fitting structure with the electrode holding material (18), and is held and fixed by the weight of each electrode. As described above, according to this embodiment, the ion source part and the electrode part are provided separately, and the electrode in the electrode part and the electrode holding material are connected in a one-touch fitting structure, and the ion source part can be removed. By performing maintenance on the electrode section from the ion source side, maintenance can be performed efficiently.

[Effects of the Invention] As explained above, according to the present invention, the electrode part and the ion source part have separate fixing structures, and the electrode in the electrode part and the electrode holding material are connected by a fitting structure, so that the electrode can be fixed with one touch. Because it can be inserted and removed freely.

Exchange electrodes without contaminating the ion source.

It is possible to perform cleaning efficiently and improve the operating efficiency of the device.

[Brief explanation of drawings]

FIG. 1 is a configuration diagram for explaining one embodiment of the ion implantation apparatus of the present invention, FIG. 2 is an explanatory diagram of the bonding structure of each electrode and electrode holding material in FIG. 1, and FIG. FIG. 4 is an explanatory diagram of a conventional ion implantation apparatus, and FIG. 5 is a configuration diagram of the ion source shown in FIG. 4. In the figure, 11... Ion source part, 13... Arc chamber, 14... Electrode part, 15... Extraction electrode. 16... Acceleration electrode, 17... Ground electrode,
18... Electrode holding material, 21... Convex portion 22...
Hole. Patent applicant: Tokyo Electron Ltd. Earth Figure 1 Figure 2 Figure 4 Earth Figure 5

Claims (3)

[Claims] (1) In an ion implanter that implants ions by irradiating the ion implantation target substrate with an ion beam from an ion source,
An ion implantation device comprising an ion source in which an electrode and an electrode holding material are coupled in a fitting structure to form a detachable structure. (2) The ion implantation device according to claim 1, wherein the electrode is fixed to the electrode holding material by a fixing pin. (3) The ion implantation device according to claim 1, characterized in that the electrode and the electrode holding material are coupled in a fitting structure, and the electrode is fixed to the electrode holding material by the electrode's own weight.