JPS63297296A - Method for discharging gas of vapor epitaxial growth device - Google Patents
Method for discharging gas of vapor epitaxial growth deviceInfo
- Publication number
- JPS63297296A JPS63297296A JP13279887A JP13279887A JPS63297296A JP S63297296 A JPS63297296 A JP S63297296A JP 13279887 A JP13279887 A JP 13279887A JP 13279887 A JP13279887 A JP 13279887A JP S63297296 A JPS63297296 A JP S63297296A
- Authority
- JP
- Japan
- Prior art keywords
- reaction vessel
- exhaust
- gas
- epitaxial growth
- pressure gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 16
- 238000007599 discharging Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000002912 waste gas Substances 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 3
- 239000012808 vapor phase Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は有機金属気相エピタキシャル成長装置の排気方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for evacuating a metal organic vapor phase epitaxial growth apparatus.
■−■化合物半導体の気相エピタキシャル成長法には化
学輸送法と有機金属気相成長（以下ＭＯＣＶＤと略す）
法がある。ＭＯＣＶＤ法の特徴は、結晶成長に必要な化
合物の組成元素および添加不純物をすべて気体の状態で
反応容器に導入するため、ガス系のバルブの切換えによ
り、組成および伝導形の異なる多層膜成長の制御が容易
なこと、ガス供給量を変えることにより成長速度を大巾
に変えうる点にある。■-■ Chemical transport method and metal organic chemical vapor deposition (hereinafter abbreviated as MOCVD) are methods for vapor phase epitaxial growth of compound semiconductors.
There is a law. A feature of the MOCVD method is that all the constituent elements of the compound necessary for crystal growth and added impurities are introduced into the reaction vessel in a gaseous state, so the growth of multilayer films with different compositions and conductivity types can be controlled by switching the gas system valve. The advantages are that the growth rate can be changed widely by changing the amount of gas supplied.
ＧａＡｓの場合には、ＧａのソースとしてはＴＭＧ（）
リメチル・ガリウムＧａ （ＣＨ３）３）が用いられ、
これは室温付近で液体であり、水素とキャリアガスとし
て反応容器中に運ばれる。一方、Ａｓのソースは気体の
アルシン（ＡｓＨ３）である、第２図において、反応容
器（１）内には加熱されたサセプタ上にＧａＡｓ基板が
置かれ、この基板上でＴＭＧとアルシンが反応して結晶
成長が行われる０反応しない残ガスは反応容器の排気部
（２）から排気管（３）を通って混合器（４）で大量の
窒素と混合し、その後に空気を供給されて燃料炉（５）
で燃焼し、廃ガス処理機（６）で処理された後にファン
（９）により屋外に排出される０反応容器（１）内の圧
力は、排気管（３）に取付けられた圧力計（７）の出力
信号により窒素導入用パルプ（８）の開閉を調節するこ
とによって制御される。また、第３図に示すように、排
気管（３）に取付けられた圧力針（７）の出力信号を変
換器（１１）により電圧に変換して調整パルプ（１３）
の開度を調節することにより、反応容器内の圧力を制御
する方法もある。In the case of GaAs, the Ga source is TMG ()
Limethyl gallium Ga (CH3)3) is used,
It is a liquid near room temperature and is carried into the reaction vessel as hydrogen and a carrier gas. On the other hand, the As source is gaseous arsine (AsH3). In Figure 2, a GaAs substrate is placed on a heated susceptor in the reaction vessel (1), and TMG and arsine react on this substrate. The unreacted residual gas passes from the exhaust part (2) of the reaction vessel through the exhaust pipe (3) and is mixed with a large amount of nitrogen in the mixer (4), after which air is supplied and the fuel is Furnace (5)
The pressure inside the reaction vessel (1), which is burned in the exhaust pipe (3) and discharged outdoors by the fan (9) after being treated in the waste gas treatment machine (6), is determined by the pressure gauge (7) attached to the exhaust pipe (3). ) is controlled by adjusting the opening and closing of the nitrogen introduction pulp (8). In addition, as shown in Fig. 3, the output signal of the pressure needle (7) attached to the exhaust pipe (3) is converted into voltage by the converter (11) and the adjusted pulp (13)
There is also a method of controlling the pressure inside the reaction vessel by adjusting the opening degree of the reaction vessel.
〔発明が解決しようとする問題点〕
しかしながら、第２図による従来の方法では、大量のＮ
２ガスを消費するため経済性が悪く、また空気を導入し
て廃ガスを燃焼させるため、大規模になると危険性が増
大し、実用的でなくなる。[Problem to be solved by the invention] However, in the conventional method shown in FIG.
Since it consumes two gases, it is not economical, and since air is introduced to burn the waste gas, when it is large-scale, it becomes dangerous and impractical.
また、第３図による従来の方法では、調整パルプ（１３
）の開度がわずか変動するだけで、反応容器（１）内の
圧力が常圧付近では大きく変化し、圧力ハンチングが生
じる。In addition, in the conventional method shown in FIG.
), the pressure inside the reaction vessel (1) changes significantly near normal pressure, causing pressure hunting.
本発明は以上のような点にかんがみてなされたもので、
その目的とするところは、反応容器内の圧力を一定に保
ち、かつ安全な気相エピタキシャル成長装置の排気方法
を提供することにある。The present invention has been made in view of the above points.
The purpose is to provide a method for evacuating a vapor phase epitaxial growth apparatus that maintains a constant pressure in a reaction vessel and is safe.
上記目的を達成するために本発明によれば、原料ガス供
給部、反応容器および排出ガス処理部からなる気相エピ
タキシャル成長装置において、前記反応容器の排気管に
圧力計を設置し、該圧力計の出力記号により前記排出ガ
ス処理部の排気ファンの回転数を制御することを特徴と
する気相エピタキシャル成長装置の排気方法が提供され
る。In order to achieve the above object, according to the present invention, in a vapor phase epitaxial growth apparatus comprising a source gas supply section, a reaction vessel, and an exhaust gas treatment section, a pressure gauge is installed in the exhaust pipe of the reaction vessel; There is provided an exhaust method for a vapor phase epitaxial growth apparatus, characterized in that the rotation speed of an exhaust fan of the exhaust gas treatment section is controlled based on an output symbol.
以下本発明の一実施例を図面により詳細に説明する。 An embodiment of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による気相エピタキシャル成長装置の排
気方法を示しており、Ｔ Ｍ Ｇ 、 Ａ ｓ Ｈｓ、
Ｈ，等から構成される混合原料ガスはガス制御装置（２
５）から供給配管（１０）を通して反応容器（１）に送
られ、ここで基板ウェハー上に薄膜を成長させる。FIG. 1 shows an evacuation method for a vapor phase epitaxial growth apparatus according to the present invention, in which T M G , A s Hs,
The mixed raw material gas consisting of H, etc. is controlled by a gas control device (2
5) through a supply pipe (10) to a reaction vessel (1) where a thin film is grown on a substrate wafer.
残りの廃ガスは排気部（２）からパルプ（１８）、排気
管（３）、フィルター（１７）を通り、配管（１４）を
通って廃ガス処理機（６）で処理される。処理後の廃ガ
スは配管（１５）を通った後にファン（９）により屋外
に排気される。排気管（３）には圧力計（７）が設置さ
れ、その出力信号Ｐを周波数Ｆに変換することによりフ
ァン（９）のモーターの回転数を制御し、従って圧力Ｐ
を制御する。ＭＯＣＶＤ法では毒性の強いガスを使用し
ているため、装置全体の安全性を確保する必要がある。The remaining waste gas passes from the exhaust section (2) through the pulp (18), the exhaust pipe (3), the filter (17), and the pipe (14) to be treated by the waste gas treatment machine (6). After the treated waste gas passes through the pipe (15), it is exhausted outdoors by the fan (9). A pressure gauge (7) is installed in the exhaust pipe (3), and by converting its output signal P into a frequency F, the rotation speed of the motor of the fan (9) is controlled, and therefore the pressure P
control. Since the MOCVD method uses highly toxic gas, it is necessary to ensure the safety of the entire device.
ガスを流している最中のファンの異常停止対策として、
ファンをバイパスする逆止弁（１６）を設置し、その作
動圧力を０．０５ｋｇ／ｃｔａに設定しである。このよ
うにすることにより、ファンが停止してガラス製の反応
容器（１）内の圧力が異常に上昇し、反応容器が破損す
ることを防止することができる。また、ＭＯＣＶＤ法で
は水素ガスを搬送ガスとして大量に使用する。このため
配管内に空気または酸素が入り、排気出口（２３）に着
火した場合、配管全体が爆発する危険性がある。この対
策として、窒素ガスを排ガス処理機（６）の手前から常
に一定量流し込んでいる。（２２）は流量計であり、廃
ガスの逆流防止のため逆止弁（２１）、窒素ガス圧を制
御するレギュレーター（２０）を設けである。反応容器
の直後にあるパルプ（１８）は５Ｍ急時には閉じられる
が、窒素ガスは常に流れているため、ファンは常に回転
している。反応容器（１）の周囲にはサセプタを加熱す
るための高周波加熱コイルがあり、この高周波の影響を
避けるため、圧力計（７）は排気管（３）に取付けられ
ている。As a countermeasure against abnormal stoppage of the fan while gas is flowing,
A check valve (16) was installed to bypass the fan, and its operating pressure was set at 0.05 kg/cta. By doing so, it is possible to prevent the fan from stopping and causing the pressure inside the glass reaction container (1) to rise abnormally, thereby preventing the reaction container from being damaged. Further, in the MOCVD method, a large amount of hydrogen gas is used as a carrier gas. Therefore, if air or oxygen enters the pipe and ignites at the exhaust outlet (23), there is a risk that the entire pipe may explode. As a countermeasure against this, a constant amount of nitrogen gas is always poured in from before the exhaust gas treatment device (6). (22) is a flow meter, which is equipped with a check valve (21) to prevent backflow of waste gas and a regulator (20) to control nitrogen gas pressure. The pulp (18) immediately after the reaction vessel is closed in the event of a 5M emergency, but the fan is constantly rotating because nitrogen gas is constantly flowing. There is a high frequency heating coil around the reaction vessel (1) for heating the susceptor, and in order to avoid the influence of this high frequency, a pressure gauge (7) is attached to the exhaust pipe (3).
本実施例の装置を使用することにより、フィルター（１
７）にトラップされる粉末によるフィルターの抵抗が時
間と共に増加する問題、本ラインおよびベントラインの
流量を一定にし、圧力を安定させることによりウェハー
上への結晶成長を急峻な構造とする問題を解決すること
ができる。By using the device of this example, the filter (1
7) Solved the problem of filter resistance increasing over time due to powder trapped in the main line and vent line, and by keeping the flow rate constant in the main line and vent line and stabilizing the pressure, the problem of crystal growth on the wafer having a steep structure was solved. can do.
本装置のガス流量条件の１例は、Ｈｚ ： １００
ｊ２／＋＊ｉｎ 、 ＴＭＧ ： ４ｃｃ／ｍｉｎ
、 Ａｓ Ｈ３： ４１／ｓｉｎ 、 Ｎｚ ：
１０Ｉ！、／＋ｓｉｎであり、排管の直径は２．５＃で
ある。An example of gas flow conditions for this device is Hz: 100
j2/+*in, TMG: 4cc/min
, As H3: 41/sin, Nz:
10I! , /+sin, and the diameter of the drain pipe is 2.5#.
以上説明したように本発明によれば、反応容器の排気管
に圧力計を設置し、該圧力計の出力信号により排出ガス
処理部の排気ファンの回転数を制御しているため、反応
容器内および排気管の圧力が安定し、従ってウェハー上
の汚染が防止され、結晶成長が安定するという優れた効
果がある。また、配管内に少量の窒素ガスを常に流すこ
とでシステムの安全性も確保される。As explained above, according to the present invention, a pressure gauge is installed in the exhaust pipe of the reaction vessel, and the rotation speed of the exhaust fan of the exhaust gas treatment section is controlled by the output signal of the pressure gauge. This has the excellent effect of stabilizing the pressure in the exhaust pipe, thereby preventing contamination on the wafer, and stabilizing crystal growth. Additionally, the safety of the system is ensured by constantly flowing a small amount of nitrogen gas into the piping.
第１図は本発明にかかる排気方法の説明図、第２図およ
び第３図は従来の排気方法の説明図である。
１・・・反応容器、 ２・・・排気部、 ３・・・排気
管、４・・・混合器、 ５・・・燃焼炉、 ６・・・廃
ガス処理機、７・・・圧力計、 ８・・・パルプ、 ９
・・・ファン、１０・・・供給配管、 １１・・・変換
器、 １２・・・Ｐ／Ｆ変換器、１３・・・調整パルプ
、 １４．１５・・・配管、 １６．２１・・・逆止弁
、１７・・・フィルター、１８．１９・・・パルプ、２
０・・・レギュレーター、 ２２・・・流量計、 ２３
・・・排気出口、 ２４・・・加熱コイル、 ２５・・
・ガス制御装置、２６・・・ベントライン。FIG. 1 is an explanatory diagram of the exhaust method according to the present invention, and FIGS. 2 and 3 are explanatory diagrams of the conventional exhaust method. DESCRIPTION OF SYMBOLS 1... Reaction container, 2... Exhaust part, 3... Exhaust pipe, 4... Mixer, 5... Combustion furnace, 6... Waste gas processing machine, 7... Pressure gauge , 8...Pulp, 9
...Fan, 10... Supply piping, 11... Converter, 12... P/F converter, 13... Adjustment pulp, 14.15... Piping, 16.21... Check valve, 17... Filter, 18.19... Pulp, 2
0...Regulator, 22...Flowmeter, 23
...Exhaust outlet, 24...Heating coil, 25...
・Gas control device, 26...vent line.
Claims (3)
からなる気相エピタキシャル成長装置において、前記反
応容器の排気管に圧力計を設置し、該圧力計の出力信号
により前記排出ガス処理部の排気ファンの回転数を制御
することを特徴とする気相エピタキシャル成長装置の排
気方法。(1) In a vapor phase epitaxial growth apparatus consisting of a raw material gas supply section, a reaction vessel, and an exhaust gas treatment section, a pressure gauge is installed in the exhaust pipe of the reaction vessel, and the output signal of the pressure gauge is used to exhaust the exhaust gas treatment section. A method for exhausting a vapor phase epitaxial growth apparatus, characterized by controlling the rotation speed of a fan.
該排気ファンの入口圧力が絶対圧で１．０５ｋｇ／ｄ以
上になると該逆止弁が作動することを特徴とする特許請
求の範囲第１項記載の気相エピタキシャル成長装置の排
気方法。(2) installing a check valve that bypasses the exhaust fan;
2. The exhaust method for a vapor phase epitaxial growth apparatus according to claim 1, wherein the check valve is activated when the inlet pressure of the exhaust fan becomes 1.05 kg/d or more in absolute pressure.
し、該吸着式廃ガス処理機の入口側から窒素ガスを常に
流し、排気ファンが常に回転していることを特徴とする
特許請求の範囲第１項記載の気相エピタキシャル成長装
置の排気方法。(3) A patent characterized in that an adsorption type waste gas treatment machine is installed in the exhaust gas treatment section, nitrogen gas is constantly flowed from the inlet side of the adsorption type waste gas treatment machine, and an exhaust fan is constantly rotating. A method for evacuating a vapor phase epitaxial growth apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62132798A JPH078758B2 (en) | 1987-05-28 | 1987-05-28 | Exhaust method for vapor phase epitaxial growth system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62132798A JPH078758B2 (en) | 1987-05-28 | 1987-05-28 | Exhaust method for vapor phase epitaxial growth system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63297296A true JPS63297296A (en) | 1988-12-05 |
| JPH078758B2 JPH078758B2 (en) | 1995-02-01 |
Family
ID=15089813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62132798A Expired - Fee Related JPH078758B2 (en) | 1987-05-28 | 1987-05-28 | Exhaust method for vapor phase epitaxial growth system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH078758B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250092A (en) * | 1991-08-22 | 1993-10-05 | Nec Corporation | Exhaust apparatus for epitaxial growth system |
| JP2015146409A (en) * | 2014-02-04 | 2015-08-13 | 信越半導体株式会社 | Normal pressure vapor growth device or piping of normal pressure vapor growth device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61229321A (en) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Vapor growth method |
-
1987
- 1987-05-28 JP JP62132798A patent/JPH078758B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61229321A (en) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Vapor growth method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250092A (en) * | 1991-08-22 | 1993-10-05 | Nec Corporation | Exhaust apparatus for epitaxial growth system |
| JP2015146409A (en) * | 2014-02-04 | 2015-08-13 | 信越半導体株式会社 | Normal pressure vapor growth device or piping of normal pressure vapor growth device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH078758B2 (en) | 1995-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |