JPS63291895A - Reactor for vapor surface treatment - Google Patents

Abstract

PURPOSE:To reproducibly control a dopant concentration in epitaxial membrane, by combining piping system for feeding a mixed gas with a vacuum evacuation device and piping system for feeding conveying gas so as to work specifically. CONSTITUTION:Hydrogen chloride gas, silicon raw material gas and dopant raw material gas are stored in vessels 27, 27a and 27b equipped with a pressure adjusting equipment and adjusted in flow rate and hydrogen gas which is a conveying gas is united to piping P1 each at uniting points 6, 6a and 6b and poured from a gas feed nozzle 1c provided in a reaction chamber 1 into the reaction chamber 1. The range connected in the piping pump and surrounded with valves 26, 13, 13a, 13b, 12 and 10 are constituted to be able to carry out vacuum evacuation as well as range R1, range R3, range R4 are each constituted to be able to carry out vacuum evacuation. On one hand, hydrogen gas and nitrogen gas which are conveying gas is made to flow from vessels 24 and 23 in the piping from a branched point 5 to a united point 2. The piping is not connected to a vacuum pump 20 and feeding of conveying gas to the reaction chamber 1 is carried out while vacuum evacuation of each range R1, R2, R3 or R4 is carried out.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an apparatus for subjecting a substrate to a chemical vapor phase surface treatment reaction. Substance (dopant) to be added to
It suppresses the addition reaction (background doping) caused by the amount remaining in the reaction gas supply system, and enables even smaller addition reactions with good controllability and reproducibility. It provides equipment.

[Prior Art] As a method for surface treatment of substrates used in semiconductor device manufacturing, etc., a chemical vapor phase reaction method (hereinafter referred to as CVR: Chemical V) is used.
The apor reaction method) is known. This method is a method in which a reaction gas is supplied to a reaction system including a substrate, and the molecules of the reaction gas are decomposed by a chemical reaction to cause a chemical reaction to occur.By supplying the energy necessary for the chemical reaction, Thermal CVR method, plasma CVR method,
It is classified as an optical CVR method.

A reaction gas supply system for carrying out such a CVR method has a configuration shown in FIG. 2 in a conventional apparatus.

By the way, what is the process for growing a silicon epitaxial thin film on a substrate?

(A) Epitaxial growth and.

(B) Susceptor cleaning There are two steps, each with an independent heat treatment batch.

In actual operation, step (B) is added to step (A) or both steps are performed alternately depending on the degree of contamination in the reaction chamber 1 due to step (A).

Step (A) is performed by the following processing.

(2) Place the substrate 1a on the susceptor lb, isolate the reaction chamber 1 from the atmosphere, and close the valve 16. The exhaust valve 22a1 is opened, nitrogen gas is adjusted to a predetermined flow rate by the flow rate regulator 3 from the container 23 equipped with a pressure regulator (not shown), and then supplied from the gas supply port IC to the reaction chamber 1 to remove the remaining gas in the reaction chamber 2. The atmosphere is replaced with nitrogen gas.

During this period, up to Step 1-1, the valves 28 and 14 are opened to replace the hydrogen chloride gas mixture system, which will be described later, and the valves 28a and 14a are opened to replace the silicon source gas mixture system with nitrogen gas. All valves other than the above are closed. ■ Valve 16 is closed, valve 17 is opened, and hydrogen gas is supplied from a container 24 equipped with a pressure regulator (not shown) after adjusting the flow rate to a predetermined flow rate with the flow regulator 4. Hydrogen gas is supplied to the reaction chamber 1 from the port 1c, and nitrogen gas in the second reaction chamber 1 is replaced with hydrogen gas.

■-1 Substrate 1a and susceptor 1b while supplying hydrogen gas
After heating to approximately 1100°C, valve 28 is closed and valve 1
9 is opened to allow hydrogen chloride gas to flow from the container 27 equipped with a pressure regulator (not shown) to the flow rate regulator 18.
While waiting for the control of the valves 28, 19, 13 to become stable,
．． The nitrogen gas remaining in the range R1 surrounded by 14 and 15 is replaced with hydrogen chloride gas.

(2) Close the valve 14, close the valve 13, mix hydrogen chloride gas with the flow rate adjusted by the flow rate regulator 18, and supply the mixture to the reaction chamber to remove the residue on the surface of the substrate 1a.

Impurities are removed together with the single crystal film on the substrate surface by an etching reaction.

(2) Close the valve 13, supply only hydrogen gas to the reaction chamber 1, replace the reaction gas in the reaction chamber 1 with hydrogen gas, and bring the temperature of the susceptor 1b to about 1050°C. The valve 19 is closed at the same time as the valve 13 is closed, and the valves 28 and 14 are opened at the same time, and the hydrogen chloride gas remaining in the range R1 surrounded by the valves 28, 19, 13, 14, and 15 is replaced with nitrogen gas.

-1 Close the valve 28a and open the valve 19a to prepare silicon source gas (Si) 12cI+, a compound of silicon, hydrogen, and chlorine such as 5iHCh, or a compound of silicon and chlorine such as 5iC1a.

5iHn, etc.) from a container 27a equipped with a pressure regulator (not shown) to the flow regulator 18a.While waiting for the control of the flow regulator t8a to become stable, the valves 28a, 19a, 13a, 14a and The nitrogen gas remaining in the range R2 surrounded by 15a is replaced with silicon source gas. At the same time, the valve 19b is opened, and a raw material gas (
Either diborane (B2H8) or phosphine (PH3) is allowed to flow through the valve 19b to the flow rate regulator 18b, and wait until the control of the flow rate regulator 18b becomes stable.

(2) Close the valve 14a, open the valve 13a, and mix the silicon raw material gas whose flow rate has been adjusted with the hydrogen gas.

At the same time, the valve 14b is closed and the valve 13b is opened, and the dopant raw material gas whose flow rate has been adjusted is also mixed with the hydrogen gas to form the reaction chamber 1.
A silicon single-crystal thin film is formed on the surface of the substrate 1a by a film-forming reaction, and a dopant (
Phosphorus (phosphorus or oborokaisu) is blended in a certain range of concentrations.

(2) Close the valves 13a and 13b and supply only hydrogen gas to the reaction chamber 1 to replace the reaction gas in the reaction chamber 1.

After gradually stopping the heating, the two reaction chambers 1 are cooled. .

At the same time as closing valves 13a and 13b, valves 19a and 19
b, and at the same time valves 28a, 14a, 28b and 14b.
Open the valve 28a.

Range R2 surrounded by 19a, 13a, 14a and 15a
and valve 28b.

A range R3 surrounded by 19b, 13b, 14b and 15b is replaced with nitrogen gas.

(2) Close valve 17, open valve 16, switch the supply gas to nitrogen gas, and replace hydrogen gas with nitrogen gas.

(2) Connect the reaction chamber 1 to the atmosphere and take out the substrate 1a.

Next, step (B) is performed by the following process.

However, the difference from step (A) is that the substrate 1a is not processed and doping is not performed.

Note that the valves 13b, 14b, and 19b remain closed.

(2) The reaction chamber 1 is isolated from the atmosphere without the substrate 1a placed on the susceptor lb, and the atmosphere in the reaction chamber 1 is replaced with nitrogen gas.

■ Supply hydrogen gas and replace nitrogen gas.

■ Heat the susceptor 1b to approximately 1100°C while supplying hydrogen gas.
After heating the susceptor 1b to a temperature of 100.degree. C., heat treatment is performed while supplying hydrogen gas containing hydrogen chloride as a reaction gas to remove residues and impurities on the surface of the susceptor lb by an etching reaction.

■ Supply only hydrogen gas to replace the reaction gas.

The temperature of the susceptor 1b is set to about 1050°C.

■ Silicon raw material (SiH2CI2+ 5iHC13
Compounds of silicon, hydrogen and chlorine such as 5iCla, silicon and hydrogen compounds such as 5iHa.

etc.) is heat-treated to form a silicon thin film with a low impurity concentration on the surface of the susceptor 1b.

■ Supply only hydrogen gas to replace the reaction gas.

The degree of heating is gradually reduced and then stopped to cool the reaction chamber 1.

■ Switch the supply gas to nitrogen gas and replace hydrogen gas.

[Problems to be Solved by the Invention] Conventionally, in such devices, gas replacement in the reaction gas supply system is performed by pushing out residual gas with the newly supplied gas, so branching of the piping system is required. Atmospheric air or nitrogen gas used for atmosphere replacement remains in the bag-shaped part connected to the part, albeit in a very small amount. For this reason, these nitrogen gases are mixed with the reaction gas, and epitaxial growth is performed in this state, so that the dopant concentration in the single crystal film formed on the substrate surface increases from the desired amount (referred to as background doping). ), there was a problem that an epitaxial film with a low dopant concentration could not be formed.

As a countermeasure to this problem, the present inventors attempted to evacuate the reaction gas supply system immediately before supplying the reaction gas to the reaction chamber 1, but the gas supply to the reaction chamber 1 was interrupted during evacuation. The interruption alters the gas flow near the substrate surface and causes backflow from the dopant-contaminated areas, which increases background doping and
There was a problem in that the temperature difference within the surface of the substrate heated to 50° C. to 1100° C. rapidly expanded, causing the substrate to deform due to thermal stress.

The present invention has been made in view of the above circumstances, and provides a gas phase surface treatment reaction device capable of suppressing background doping and controlling the dopant concentration in an epitaxial film to a lower value and with good reproducibility. With the goal.

[Means for Solving the Problems] The present invention provides, in addition to the first piping system for supplying the carrier gas, a second piping system without a branch part in the middle for supplying only the carrier gas to the reaction chamber 1. The second piping system is equipped with a second piping system, and while the remaining components inside the first piping system are exhausted and removed by a vacuum
by supplying the same flow rate of carrier gas from the piping system as before.

It is configured so that the state quantities in the reaction chamber 1, such as gas flow and temperature distribution, which depend on the gas flow rate, do not change.

[Example] The present invention will be specifically explained below based on the drawings.

FIG. 1 is a schematic diagram showing an embodiment of the apparatus of the present invention, and numeral 1 in FIG. 9 is a reaction chamber in which gas phase surface treatment is carried out. A substrate 1a is placed on a susceptor lb provided in a reaction chamber 1 of a gas phase surface treatment apparatus according to the present invention, and is heated to a temperature necessary for a surface treatment reaction by a heating mechanism (not shown).

Hydrogen chloride gas, silicon raw material gas, and dopant raw material gas are each stored in containers 27 and 2 equipped with pressure regulators (not shown).
7a and 27b, and are stored in valves 19, 19a, 1, respectively.
9b, the flow rate is adjusted by flow rate regulators 18, 18a, 18b, respectively, and hydrogen gas, which is a carrier gas, flows from valves 13.13a, 13b, respectively, and joins pipe P1 flowing from branch point 5 at confluence points 6.6a, 6b, respectively. The gas is injected into the reaction chamber 1 from a gas supply nozzle lc provided in the reaction chamber 1 via the valve 10.

A vacuum pump 20 is connected to this pipe PI via a valve 11, and valves 26.13.13a, 1
In addition to being configured to be able to evacuate the area surrounded by 3b, 12 and 10, the valve 2 is connected to each flow regulator 18.18a, 18b via valves 15.15a, 15b.
Range R1 surrounded by 8, 19, 13, 14 and 15,
Valves 28a, 19a, 13a, 14a, and 15a
Range R3 surrounded by valves 28b, 19b, 13b,
The range R4 surrounded by 14b and 15b is configured to be able to be evacuated.

On the other hand, from the 9 branch point 5 to the valve 25. In the pipe P2 which reaches the confluence point 2 via the flow regulator 3 and the valve 9.

Hydrogen gas and nitrogen gas, which are carrier gases, are in containers 24 and 2.
It is washed away from 3. The vacuum pump 20 is not connected to this piping P2, and each of the above ranges R1, R2, R3, R4
The carrier gas can be supplied to the reaction chamber 1 while the vacuum evacuation is being performed.

The following 9 sections from branch point 5 to confluence point 2 are covered by the second piping system B.
, the other parts are called the first piping system A.

The actual process of vapor phase surface treatment using such an apparatus of the present invention will be explained.

First, step (A) will be explained below.

(2) The substrate 1a is placed on the susceptor 1b, the two reaction chambers 1 are isolated from the atmosphere, and the valves 16.25.26.9. to and the exhaust valve 22a1 are opened, nitrogen gas is adjusted to a predetermined flow rate using the flow rate regulators 3 and 4 from the container 23 equipped with a pressure regulator (not shown), and then supplied into the reaction chamber 1 from the gas supply port IC for 2 reactions. The residual atmosphere in chamber 1 is replaced with nitrogen gas. At this time, the flow rate regulator 4 to the first piping system A adjusts the total gas flow rate to 9
The flow rate regulator 3 to the second piping system B is adjusted to flow 10% of the total gas flow rate, and the insides of the first and second piping systems A and B are also replaced with nitrogen gas.

During this time, up to ■-1, the valves 28 and 14 are open to supply the hydrogen chloride gas mixture system (to be described later), the valves 28a and 14a are open to supply the silicon raw material gas mixture system, and the valves 28b and 14b are open to supply the dopant gas mixture system. Replace with nitrogen gas. All valves other than those listed above are closed.

- Close the valve 16, open the valve 17, and supply hydrogen gas from the container 24 equipped with a pressure regulator (not shown) into the reaction chamber 1 from the gas supply port lc after adjusting the flow rate to a predetermined flow rate using the flow rate regulators 3 and 4. Then, the nitrogen gas in the reaction chamber 1 is replaced with hydrogen gas. At this time, the flow rate regulator 4 to the first piping system A accounts for 90% of the total gas flow rate, and the flow rate regulator 3 to the second piping system B
are adjusted so that 10% of the total gas flow rate flows through each, and the insides of the first and second piping systems A and B are also replaced with hydrogen gas.

■-1 While supplying hydrogen gas from the container 24, the susceptor ib
After heating to about 1100° C., the vacuum pump 20 is started, valves 28 and 14 are closed, and valve 15 is opened.

Area R1 surrounded by valves 28.19.13.14 and 15
After evacuating the remaining nitrogen gas from the valve 15, the valve 15 is closed, the valve 19 is opened, and the hydrogen chloride gas is discharged from the container 27 equipped with a pressure regulator (not shown) through the valves 28, 19, and 13.
The range R2 surrounded by 14 and 15 is filled to a pressure equal to or higher than atmospheric pressure. Thereafter, the valve 14 is opened to discharge hydrogen chloride gas while flowing it to the flow rate regulator 18, and the flow ffi regulator 1
Wait until the control of 8 becomes stable.

After the vacuum pump 20 is started and until the valve 15 is closed, the flow rate of the flow rate regulator 3 reaches 100% of the total gas flow rate.

The flow rate regulators 3 and 4 are adjusted in cooperation without changing the total gas flow rate so that the flow rate of the flow rate regulator 4 becomes 00% of the total gas flow rate. That is, gas is supplied only from the second piping system B.

At the same time as closing valve 15, valve 26.10 is closed and valve 11 is closed.
Open the valves 26.13.13a, 13b, 12.
After evacuating the range R2 surrounded by the valve 11 through the valve 11, the valve 11.14 is closed, the valve 26 is opened, and the flow rate of the flow rate regulator 4 is gradually increased to 100%.
a, 13b.

A region R2 surrounded by 12 and 10 is filled with hydrogen gas to a pressure equal to or higher than atmospheric pressure. Thereafter, valves 12 and 13 were opened to mix hydrogen gas and hydrogen chloride gas at confluence point 6, and the mixture was discharged from valve 12, and the valve 12 was then closed. At this point, the vacuum pump 20 stops. Note that while the vacuum pump 20 is stopped, nitrogen gas is supplied into the casing of the pump from a nitrogen gas supply pipe (not shown) to replace the inside of the casing with nitrogen gas.

■-2 Close the valve 9 and open the valve 10, heat-treat while supplying a mixed gas of hydrogen chloride gas and hydrogen gas with an adjusted flow rate to the reaction chamber 1, and remove residues and dull substances from the surface of the substrate 1a. It is removed together with the single crystal film by an etching reaction.

(2) Close the valve 13, supply only hydrogen gas to replace the reaction gas, and bring the susceptor temperature to about 1050°C.

At the same time as closing the valve 13, the valve 9 is closed, the flow rate regulator 4 is set to 90% of the total gas flow rate, and the flow rate regulator 3 is set to 10% of the total gas flow rate.
Adjust the flow rate so that % is flowing.

Also, at the same time as valve 13 is closed, valves 28 and 14 are opened.

Area R1 surrounded by valves 28.19.13.14 and 15
Replace the remaining hydrogen chloride gas with nitrogen gas.

(1) Start the vacuum pump 20, close the valves 28a and 14a, open the valve 15a, and close the valves 28a, 19a, and 13a.

After evacuating the nitrogen gas remaining in the area R3 surrounded by 14a and 15a, the left side 15a is closed, the valve 19a is opened, and the silicon source gas is transferred from the container 27a equipped with a pressure regulator (not shown) to the valves 28a, 19a, 13a. , 14a and 15a is filled to a pressure equal to or higher than atmospheric pressure. Thereafter, the valve 14a is opened to discharge the silicon raw material gas from the container 7a and flow it to the flow rate regulator 18a, waiting for the control of the flow rate regulator 18a to become stable.

At the same time as closing valve 15a, valves 28b and 14b are closed, valve 15b is opened, and valves 28b, 19b, 13b, 14 are closed.
After evacuating the nitrogen gas remaining in the area surrounded by b and 15b, the left side 15b is closed, and the valve 19b is opened to supply the dopant raw material gas to the container 2 equipped with a pressure regulator (not shown).
7b to the range R4 surrounded by valves 19b, 13b, 14b, and 15b is filled to a pressure equal to or higher than atmospheric pressure. after that,
Open the valve 14b and open the container 2? While discharging the dopant raw material gas from b, it is allowed to flow through the flow regulator 18b and waits for the control of the flow ffi regulator 18b to become stable.

After the vacuum pump 20 is started and until the valve 15b is closed, the flow rate of the flow rate regulator 3 reaches 100% of the total gas flow rate.

So that the flow rate of the flow rate regulator 4 is 0% of the total gas flow rate,
The flow rate regulators 3 and 4 are adjusted in coordination so as not to change the total gas flow rate.

At the same time as closing valve 15b, valve 26.10 is closed, and valve 1
1 open, valves 26.13.13a, 13b, 12
．． After evacuating the area R2 surrounded by 10, the left 11.
Close 14.

The valves 26.13.13a, 13b, 12 are opened by opening the valve 26 and gradually increasing the flow rate of the flow rate regulator 4 to 100%.
．． A range R2 surrounded by 10 is filled with hydrogen gas to a pressure equal to or higher than atmospheric pressure. Thereafter, the valves 12 and 13 are opened to mix the hydrogen gas and the silicon source gas at the confluence point 6a, and while mixing the dopant source gas at the confluence point 6b, this mixed gas is discharged from the valve 12, and the flow rate regulator 4° 18a and 1
The vacuum pump 20 is stopped when the valve 13 is closed, and nitrogen gas is supplied into the pump casing as described above to replace the inside of the casing with nitrogen gas.

■-2 Close the valve 9 and open the valve 10. Heat treatment is performed while supplying a mixed gas of silicon raw material gas, dopant raw material gas, and hydrogen gas with adjusted flow rates to the reaction chamber 1, and the film forming reaction is performed on the substrate surface 1a. A silicon single-crystal thin film is formed, and a dopant (phosphorus or phosphorus) is mixed into the film at a concentration within a certain range by an addition reaction (called doping).

(2) Close the valves 13a and 13b, supply only hydrogen gas to replace the reaction gas, gradually reduce the degree of heating, and then stop to cool the reaction chamber l.

Valve 9 is opened at the same time as valves 13a and 13b are closed.

The flow rate regulator 4 adjusts the flow rate so that 90% of the total gas flow rate flows, and the flow rate regulator 3 adjusts the flow rate so that 10% of the total gas flow rate flows.

At the same time as closing the valve 13a, the valves 28a and 14a are opened to replace the silicon source gas remaining in the range R3 surrounded by the valves 28a, 19a, 13a, 14a, and 15a with nitrogen gas.

(2) Close valve 17, open valve 16, and switch the supplied gas to nitrogen gas to replace hydrogen gas.

(2) Connect the reaction chamber 1 to the atmosphere and take out the substrate 1a.

The apparatus of the present invention performs vapor phase surface treatment through the above-described operations, but in order to compare the doping controllability of the apparatus of the present invention, we will compare the two apparatuses of the present invention and a conventional apparatus, particularly in step (A). Regarding the results of epitaxial growth without doping, the horizontal axis shows the depth from the surface (μm), and the vertical axis shows the dopant l"1 degree (number of atoms/cc), and the most dopant at each point on the substrate surface. Figure 3 shows a dopant profile with a high concentration, and for comparison of doping reproducibility, Figure 4 shows the number of processing reaction batches when only step (A) without doping is repeated on the horizontal axis ( times),
The vertical axis is the maximum in-plane dovan on the surface of the epitaxial thin film)
[It is shown in degrees (number of atoms/cc).

In the case of the conventional device, the dopant concentration at the epitaxial thin film surface (depth 0) is as high as 8×1013 atoms/am' on average, as shown by the dopant profile shown by the broken line in FIG. 3(a). As shown in (d),
Even though no doping is performed, the surface dopant concentration increases with each batch due to the influence of the dopant remaining in the piping, and there is no reproducibility (4 times increase after 100 batches)
, indicating a large amount of background doping.

On the other hand, in the case of the second invention, as shown by the solid line in FIG.
As shown in Figure (e), the dopant concentration on the two surfaces has relatively good reproducibility with respect to the number of processing batches (1.
In other words, there is extremely little dopant remaining in the pipe. Furthermore, no inferiority in quality compared to the conventional example, such as deformation of the substrate, was observed.

As a comparative example, step (A) ■-
When Steps 1 and 1-1 were carried out with the valves 9 and 25 of the first piping system B closed, the surface dopant concentration increased to an average of 2 x 1014, as shown by the broken line in Figure 3(C). Further, thermal stress deformation occurred in the substrate 1a.

[Effects of the Invention] As detailed above, the apparatus of the present invention improves doping controllability by evacuating the first piping system for supplying the reaction gas to remove residual impurities in the piping system. In addition to improving reproducibility, piping system B prevents the gas supply cutoff caused by evacuation of the first piping system by supplying only the carrier gas, and prevents the gas supply cutoff caused by the vacuum evacuation of the first piping system. It has excellent properties such as preventing deterioration of product quality.

In the above embodiment, only the step (A) of performing epitaxial growth has been described, but it goes without saying that the same effect can be achieved when performing the step (B).

In addition, although the above embodiments have been described using a silicon epitaxial growth process as an example, the same reaction mechanism using, for example, an organometallic compound as a raw material can be applied to a similar thermochemical vapor phase surface treatment reaction.

[Brief explanation of the drawing]

FIG. 1 is a piping system diagram of an embodiment of the apparatus of the present invention. Fig. 2 is a piping system diagram of a conventional device, Fig. 3 is a dopant profile according to an embodiment of the present invention and a conventional example, and Fig. 4 is a surface dopant concentration process (A
) is a graph showing the dependence on the number of processing batches. l: reaction chamber 1a: substrate Ib: susceptor 2: first
Confluence point of piping system A and second piping system B 6: Mixing point of hydrogen gas and hydrogen chloride gas 6a: Mixing point of hydrogen gas and silicon raw material gas 6b: Mixing point of hydrogen gas and dopant raw material gas 8: Branch point from the first piping system A to the vacuum exhaust pipe 9: Supply valve from the second piping system B to the reaction chamber
10: Supply valve exhaust pipe from the first piping system A to the reaction chamber
13: Hydrogen chloride gas mixing valve 13a: Silicon raw material gas mixing valve 13b Nido-Vant raw material gas mixing valve 14:
Shutoff valve between hydrogen chloride gas mixing piping system and vacuum exhaust pipe 1
4a: Shutoff valve between silicon raw material gas mixing piping system and vacuum exhaust pipe 14b Shutoff valve between Nido-Band raw material gas mixing piping system and vacuum exhaust pipe Exhaust port 15: Hydrogen chloride gas mixing piping system and discharge pipe (atmospheric pressure) 15a: Shutoff valve between silicon raw material gas mixing piping system and discharge pipe 15b = Shutoff valve between dopant raw material gas mixing piping system and discharge pipe (atmospheric pressure) 16: Nitrogen gas supply valve to supply pipe 17: Hydrogen gas supply valve to supply pipe 23: Nitrogen gas container 24:
Hydrogen gas container 25: Supply valve to second piping system B
26: Supply valve to first piping system A 27: Hydrogen chloride gas container 27a: Silicon raw material gas container 27b=
Dopant raw material gas container 28: Nitrogen gas supply valve to hydrogen chloride gas mixing piping system 28a: Nitrogen gas supply valve to silicon raw material gas mixing piping system 28b Nitrogen gas supply valve to dopant raw material gas mixing piping system Patent application Person Sumitomo Metal Industries Co., Ltd. Agent Patent Attorney Norio Kono 43 Donkey 10 times (0 &) Figure 4

Claims (1)

[Scope of Claims] 1. A step of supplying a raw material gas containing components necessary for a processing reaction of the substrate with a carrier gas to the reaction chamber, and a step of supplying only the carrier gas to the reaction chamber. A gas phase surface treatment reaction apparatus designed to grow crystals of the components on the surface, comprising: a first piping system for mixing the source gas and carrier gas and supplying the mixture to the reaction chamber; an evacuation device connected to a piping system to evacuate the piping system; and a second piping system that supplies a carrier gas to the reaction chamber while the evacuation device is evacuating the first piping system. A gas phase surface treatment reaction device characterized by: