JPS63289702A - Conductor paste material and aluminum nitride multilayer printed circuit board therewith - Google Patents
Conductor paste material and aluminum nitride multilayer printed circuit board therewithInfo
- Publication number
- JPS63289702A JPS63289702A JP12105587A JP12105587A JPS63289702A JP S63289702 A JPS63289702 A JP S63289702A JP 12105587 A JP12105587 A JP 12105587A JP 12105587 A JP12105587 A JP 12105587A JP S63289702 A JPS63289702 A JP S63289702A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- aluminum nitride
- circuit board
- base material
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 title claims abstract description 27
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000010304 firing Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- DOIRQSBPFJWKBE-UHFFFAOYSA-N phthalic acid di-n-butyl ester Natural products CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 abstract description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 abstract description 5
- 239000011230 binding agent Substances 0.000 abstract description 4
- 239000011812 mixed powder Substances 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 3
- 238000000498 ball milling Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract 1
- 229910033181 TiB2 Inorganic materials 0.000 abstract 1
- 229910007948 ZrB2 Inorganic materials 0.000 abstract 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 abstract 1
- 229910001950 potassium oxide Inorganic materials 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 17
- 239000010937 tungsten Substances 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- WRSVIZQEENMKOC-UHFFFAOYSA-N [B].[Co].[Co].[Co] Chemical group [B].[Co].[Co].[Co] WRSVIZQEENMKOC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- HZEIHKAVLOJHDG-UHFFFAOYSA-N boranylidynecobalt Chemical compound [Co]#B HZEIHKAVLOJHDG-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
窒化アルミニウム基板のように高温焼成を要する基板と
一体焼成できる低抵抗導体材料として２種類以上のホウ
化物の混合物からなるペーストを堤供する。[Detailed Description of the Invention] [Summary] A paste consisting of a mixture of two or more types of borides is provided as a low resistance conductor material that can be integrally fired with a substrate that requires high temperature firing such as an aluminum nitride substrate.
本発明は導体ペースト材料とそれを用いた窒化アルミニ
ウム多層回路基板に係る。The present invention relates to a conductive paste material and an aluminum nitride multilayer circuit board using the same.
セラミック回路基板はアルミナ基板とガラスセラミック
基板がある。前者は高温焼成基板で内部配線にはタング
ステンやモリブデンなどの高融点金属（耐火金属）が用
いられており、後者は低温での焼成を目的とした複合物
で内部配線には金、ｉ艮−パラジウム、銅などが用いら
れている。Ceramic circuit boards include alumina boards and glass ceramic boards. The former is a high-temperature firing board and the internal wiring uses high-melting point metals (refractory metals) such as tungsten and molybdenum, while the latter is a composite material intended for firing at low temperatures and the internal wiring uses gold, i- Palladium, copper, etc. are used.
アルミナ−タングステン基板は、アルミナの熱伝導率が
２０Ｗ／ＩＩＩＫと低いこと、誘電率が約１０と高いこ
と、熱膨張率がシリコンの３．５〜４．０×１０−６℃
伺（Ｒ，Ｔ、〜２００℃）と比べて５〜６Ｘ４０−”℃
−１と差が大きいこと、また導体として用いるタングス
テンの抵抗が１５ｍΩ／口（シート抵抗）と大きいこと
が問題となっている。そこで、熱伝導率が高＜ （１８
０Ｗ／ｍＫ） 、熱膨張率がシリコンと近い（３，４ｘ
ｌＯ−ｂ℃−’）窒化アルミニウムをセラミック回路基
板として用いることが研究されている。The alumina-tungsten substrate has a low thermal conductivity of 20 W/IIIK, a high dielectric constant of about 10, and a thermal expansion coefficient of 3.5 to 4.0 x 10-6°C compared to silicon.
5~6X40-”℃ compared to (R, T, ~200℃)
-1, and the resistance of tungsten used as a conductor is as large as 15 mΩ/hole (sheet resistance). Therefore, the thermal conductivity is high < (18
0W/mK), the coefficient of thermal expansion is close to that of silicon (3,4x
The use of aluminum nitride as a ceramic circuit board has been studied.
上記の如く、窒化アルミニウムは熱伝導率が高く、熱膨
張率がシリコンに近いのでセラミック基板材料として望
ましいが、その焼成温度は１８００〜１９００℃程度で
あり、金や銅などの電気抵抗は小さいが低融点の導体材
料は用いることができない。As mentioned above, aluminum nitride has high thermal conductivity and a coefficient of thermal expansion close to that of silicon, so it is desirable as a ceramic substrate material, but its firing temperature is about 1800 to 1900°C, and although it has a low electrical resistance like gold and copper, Conductive materials with low melting points cannot be used.
しかしながら、タングステンやモリブデンなどの従来用
いられている高融点導体材料は前記の如く電気抵抗が比
較的に大きいので、問題である。However, conventionally used high melting point conductor materials such as tungsten and molybdenum have a relatively high electrical resistance, which is problematic.
本発明は、上記の如き従来技術の問題に鑑みて、高温焼
成可能な低抵抗導体材料を提供すること、またそれを用
いて導体抵抗の小さい窒化アルミニウム多層回路基板を
提供することを目的とするものである。In view of the problems of the prior art as described above, the present invention aims to provide a low-resistance conductor material that can be fired at high temperatures, and to provide an aluminum nitride multilayer circuit board with low conductor resistance using the same. It is something.
本発明は、上記問題点を、少なくとも２種類の金属ホウ
化物を主たる導体材料として含む導体ペースト、および
これを用いて導体層を形成した窒化アルミニウム回路基
板を提供することによって解決する。The present invention solves the above problems by providing a conductor paste containing at least two types of metal borides as main conductor materials, and an aluminum nitride circuit board in which a conductor layer is formed using the conductor paste.
金属ホウ化物はタングステン、モリブデンなどと比べて
導電性が４〜５倍も高いので、これを導体材料として用
いることができれば、導体の抵抗を低下できる。しかし
、金属ホウ化物は、通常、その焼成温度が二千数百℃以
上と高いので、窒化アルミニウムなどのセラミック基材
の焼成温度で焼成することができないという不都合があ
る。しかし、金属ホウ化物を２種類以上混合したものは
固溶体や共晶反応による化合物を形成して焼成温度を低
下することができる。そこで、本発明では、少なくとも
２種類の金属ホウ化物を含む導体ペーストを形成した。Metal borides have 4 to 5 times higher conductivity than tungsten, molybdenum, etc., so if they can be used as conductor materials, the resistance of the conductor can be lowered. However, since metal borides usually have a high firing temperature of 2,000-odd degrees Celsius or more, they have the disadvantage that they cannot be fired at the firing temperature of ceramic substrates such as aluminum nitride. However, when two or more types of metal borides are mixed, a solid solution or a compound due to a eutectic reaction is formed, and the firing temperature can be lowered. Therefore, in the present invention, a conductive paste containing at least two types of metal borides was formed.
金属ホウ化物としては、例えば、ホウ化チタン（ＴｉＢ
２）、ホウ化コバルト（ＣｏＢ）、ホウ化アルミニウム
（Ａｊ！Ｂ＋ｉ）、ホウ化ジルコニウム（ＺｒＢｇ）な
どがある。少なくとも２種類の金属ホウ１ヒ物の存在割
合は、要は、焼成温度が所望の温度まで低下すればよく
、従って、金属ホウ化物の種類や所望の焼成温度などに
よって異なる。Examples of metal borides include titanium boride (TiB).
2), cobalt boride (CoB), aluminum boride (Aj!B+i), zirconium boride (ZrBg), etc. The ratio of the at least two types of metal borides may vary depending on the type of metal borides, the desired firing temperature, etc., as long as the firing temperature is lowered to a desired temperature.
例工ば、ホウ化チタンとホウ化ジルコニウムの系では、
ホウ化チタン４０〜６０ｗｔ％とホウ化ジルコニウム６
０〜４０−ｔ％、特にホウ化チタン５０％とホウ化ジル
コニウム５０％が好ましい。また、ホウ化チタンとホウ
化ジルコニウムの５０ ： ５０組成物を基準にしてホ
ウ化ジルコニウムの一部をホウ化コバルトで置換したも
のも好ましい。For example, in the system of titanium boride and zirconium boride,
40-60wt% titanium boride and 6 zirconium boride
0 to 40-t%, especially 50% titanium boride and 50% zirconium boride are preferred. It is also preferable to use a 50:50 composition of titanium boride and zirconium boride in which part of the zirconium boride is replaced with cobalt boride.
導体ペーストを構成するに当っては、導体材料としての
金属ホウ化物のほかに、必要に応じて、有機バインダ（
例えば、ポリビニルブチラール、ポリメチルメタアクリ
レート）、可塑剤（例えば、シフ゛チルフタレート）、
？容剤（エタノール、メチルエチルケトン）などを添加
する。また、例えば、アルミニウムを添加すれば窒化ア
ルミニウム基材に対する密着性を向上させることができ
る。アルミニウムの添加量はホウ化物混合粉末の重量に
対して１〜２％程度である。When composing the conductor paste, in addition to the metal boride as the conductor material, an organic binder (
(e.g., polyvinyl butyral, polymethyl methacrylate), plasticizers (e.g., cyphytyl phthalate),
? Add containers (ethanol, methyl ethyl ketone), etc. Further, for example, by adding aluminum, the adhesion to the aluminum nitride base material can be improved. The amount of aluminum added is about 1 to 2% based on the weight of the boride mixed powder.
本発明の金属ホウ化物基導体ペーストは、主として、窒
化アルミニウム回路基板と共に用いることを意図して開
発されたものであるが、その用途は窒化アルミニウム回
路基板に限らず、セラミック回路基板にも、あるいは回
路基板以外の高温焼成品用の低抵抗導体材料として一般
的に有用である。The metal boride-based conductive paste of the present invention was developed primarily for use with aluminum nitride circuit boards, but its use is not limited to aluminum nitride circuit boards, but also ceramic circuit boards, or It is generally useful as a low-resistance conductor material for high-temperature fired products other than circuit boards.
次に、金属ホウ化物基導体ペーストを用いた窒化アルミ
ニウム回路基板について説明するが、これは、基本的に
、セラミックス基材として窒化アルミニウムを用い、ま
た導体材料として金属ホウ化物基導体ペーストを用いる
以外、慣用のセラミック回路基板、例えば、アルミナ基
材とタングステンペーストを用いたセラミック回路基板
と同様の操作で作製することができる。すなわち、窒化
アルミニウムのグリーンシートに導体ペーストを印刷あ
るいはスルーホール充填したものを積層し、脱脂、焼成
して作製する。窒化アルミニウムの焼成雰囲気としては
窒素雰囲気または弱還元性雰囲気が好ましい。また、金
属ホウ化物基ペーストの一般的焼成雰囲気としてはタン
グステン等の金属が水素を含む還元性雰囲気を必要とす
るのに対し、アルゴンや窒素などを利用することができ
る。Next, an aluminum nitride circuit board using a metal boride-based conductor paste will be explained. , can be produced in the same manner as a conventional ceramic circuit board, for example, a ceramic circuit board using an alumina base material and tungsten paste. That is, it is manufactured by laminating aluminum nitride green sheets printed with conductive paste or filled with through holes, degreased, and fired. The atmosphere for firing aluminum nitride is preferably a nitrogen atmosphere or a weakly reducing atmosphere. Furthermore, as a general firing atmosphere for metal boride-based pastes, argon, nitrogen, or the like can be used, whereas metals such as tungsten require a reducing atmosphere containing hydrogen.
なお、本発明において、セラミック回路基板は、必ずし
もいわゆる多層回路基板に限らず、半導体チップを搭載
し、内部配線を有するセラミックパッケージ（第１図）
のような、広義の回路基板も含むものである。第１図中
、■はセラミックパッケージ本体、２は導体層、３は半
導体チップ、４はワイヤ、５はキャップである。また、
本発明の導体ペーストは基材セラミックスと一体焼成で
きることを特徴としているが、基材と別箇に焼成して用
いてもよいものである。また、本発明の導体ペースト中
の少なくとも２種類の金属ホウ化物は通常単に混合物と
して添加されるが、２種類以上の金属ホウ化物あるいは
それと他の微量添加物との仮焼物あるいは焼成物の粉末
として添加してもよいものである。Note that in the present invention, the ceramic circuit board is not necessarily limited to a so-called multilayer circuit board, but may also be a ceramic package mounted with a semiconductor chip and having internal wiring (Fig. 1).
It also includes circuit boards in a broad sense, such as. In FIG. 1, ■ is a ceramic package body, 2 is a conductor layer, 3 is a semiconductor chip, 4 is a wire, and 5 is a cap. Also,
The conductive paste of the present invention is characterized in that it can be fired integrally with the base ceramic, but it may also be fired separately from the base material. Further, at least two types of metal borides in the conductor paste of the present invention are usually added simply as a mixture, but as a powder of a calcined or fired product of two or more types of metal borides or with other trace additives. It may be added.
窒化アルミニウム４００ｇ、酸化カルシウム８ｇに対し
てポリビニルブチラール（ＰｖＢ）２５ｇ、ジブチルフ
タレート（ＤＢＰ）２５ｇ、エタノール５００ｇを調合
し、４０時間のボールミリングを行い、スラリー化した
。得られたスラリーからドクターブレード法により、ギ
ヤ、プ３５０ ｔｒｍ、送り速度３ｍ／ｍｉｎで成形し
、グリーンシートとした。25 g of polyvinyl butyral (PvB), 25 g of dibutyl phthalate (DBP), and 500 g of ethanol were mixed with 400 g of aluminum nitride and 8 g of calcium oxide, and ball milling was performed for 40 hours to form a slurry. The obtained slurry was formed into a green sheet by a doctor blade method using a gear, a pressure of 350 trm, and a feed rate of 3 m/min.
配線材料はＴｉＲｚ ： ＺｒＢｚ ”’５０ ： ５
０に対しＣｏＢを２ｗｔ％添加した混合粉とした。混合
粉末１００ ｇに、ポリビニルブチラール１５ｇ、から
なる有機バインダーを添加し、さらに溶剤としてブチル
カルピトールアセテートを１０ｇ加え、ミキサー法によ
り混練し、その後三本ロールミルで処理しペースト化し
た。The wiring material is TiRz:ZrBz”'50:5
A mixed powder was prepared by adding 2 wt% of CoB to 0. An organic binder consisting of 15 g of polyvinyl butyral was added to 100 g of the mixed powder, and 10 g of butyl carpitol acetate was added as a solvent, and the mixture was kneaded by a mixer method and then processed in a three-roll mill to form a paste.
出来たペーストを第１図（ア）に示す如く窒化アルミニ
ウムグリーンシート１１上に厚み３ｏ迦にスクリーン印
刷１２し、スルーホール中に充填し、乾燥し、第２図（
イ）に示す如く１０層を積層した。The resulting paste was screen printed 12 on an aluminum nitride green sheet 11 to a thickness of 30 mm as shown in Figure 1 (A), filled into the through holes, dried, and then printed as shown in Figure 2 (A).
10 layers were laminated as shown in b).
このようにして得た積層体を６００℃大気中でバインダ
ー抜きした後、１８００℃、４時間窒素雰囲気中で焼成
し、多層回路基板とした。After removing the binder from the thus obtained laminate in the atmosphere at 600°C, it was fired at 1800°C for 4 hours in a nitrogen atmosphere to obtain a multilayer circuit board.
出来上った回路基板は熱伝導率１８０Ｗ／ｍＫ、シート
抵抗１０ｍΩ／口であった・なお・タングステア（７）
シート抵抗は１５ｍΩ／口程度である・〔発明の効果〕
本発明によれば、２種類以上の金属ホウ化物を導体材料
とする風体ペーストによって、窒化アルミニウムなどの
高温焼成セラミック基材と一体焼成することが可能な低
抵抗４体材料が提供される。The completed circuit board had a thermal conductivity of 180 W/mK and a sheet resistance of 10 mΩ/hole.Tungsteer (7)
The sheet resistance is about 15 mΩ/mouth. [Effects of the Invention] According to the present invention, the sheet is integrally fired with a high-temperature fired ceramic base material such as aluminum nitride using a wind paste containing two or more types of metal borides as conductive materials. A low-resistance four-body material is provided.
この導体の抵抗はタングステンの４〜５分の１種度であ
ることができる。また、このような導体ペーストを窒化
アルミニウム基材と併用することによって、基材の熱伝
導性、熱膨張率などにも優れ、かつ導体抵抗も低いセラ
ミック回路基板が提供される。The resistance of this conductor can be 4-5 times lower than that of tungsten. Moreover, by using such a conductive paste in combination with an aluminum nitride base material, a ceramic circuit board can be provided which has excellent thermal conductivity, thermal expansion coefficient, etc. of the base material, and low conductor resistance.
第１図はセラミックパッケージの模式断面図、第２図は
実施例の多層回路基板の装置を表わす模式図である。
１・・・セラミック基材、 ２・・・導体層、１１・
・・グリーンシート、１２・・・導体プリント層。
′″１
セラミックパッケージ
第１図
］−・・セラミ７・り基材
２・・・導体層
多層回路基板の作製
第２図
］１・・・グリーンシート
１２・・・導体プリントＬ・づFIG. 1 is a schematic sectional view of a ceramic package, and FIG. 2 is a schematic diagram showing a multilayer circuit board device according to an embodiment. DESCRIPTION OF SYMBOLS 1... Ceramic base material, 2... Conductor layer, 11.
...Green sheet, 12...Conductor print layer. '''1 Ceramic package Fig. 1] - Ceramic 7, base material 2... Preparation of conductor layer multilayer circuit board Fig. 2] 1... Green sheet 12... Conductor print L/Z
Claims (1)
として含むことを特徴とする導体ペースト材料。 ２、窒化アルミニウム基材に少なくとも２種類の金属ホ
ウ化物を焼成して成る導体層を有することを特徴とする
窒化アルミニウム多層回路基板。[Scope of Claims] 1. A conductive paste material containing at least two types of metal borides as main conductive materials. 2. An aluminum nitride multilayer circuit board characterized by having a conductor layer formed by firing at least two types of metal borides on an aluminum nitride base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12105587A JPS63289702A (en) | 1987-05-20 | 1987-05-20 | Conductor paste material and aluminum nitride multilayer printed circuit board therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12105587A JPS63289702A (en) | 1987-05-20 | 1987-05-20 | Conductor paste material and aluminum nitride multilayer printed circuit board therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63289702A true JPS63289702A (en) | 1988-11-28 |
Family
ID=14801723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12105587A Pending JPS63289702A (en) | 1987-05-20 | 1987-05-20 | Conductor paste material and aluminum nitride multilayer printed circuit board therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63289702A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0764618A3 (en) * | 1995-08-16 | 1997-06-04 | Du Pont | Thick film conductor paste compositions for aluminum nitride substrates |
-
1987
- 1987-05-20 JP JP12105587A patent/JPS63289702A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0764618A3 (en) * | 1995-08-16 | 1997-06-04 | Du Pont | Thick film conductor paste compositions for aluminum nitride substrates |
| US6103146A (en) * | 1995-08-16 | 2000-08-15 | E. I. Du Pont De Nemours And Company | Thick film conductor paste compositions for aluminum nitride substrates |
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