JPS63285815A - Manufacture of membranous oxide superconductor - Google Patents
Manufacture of membranous oxide superconductorInfo
- Publication number
- JPS63285815A JPS63285815A JP62121915A JP12191587A JPS63285815A JP S63285815 A JPS63285815 A JP S63285815A JP 62121915 A JP62121915 A JP 62121915A JP 12191587 A JP12191587 A JP 12191587A JP S63285815 A JPS63285815 A JP S63285815A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide superconductor
- substrate
- superconductor
- perovskite structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000843 powder Substances 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 20
- 239000005388 borosilicate glass Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は基板面上に、酸化物超電導体を、任意の形状の
薄膜状態で、高速かつ精度良く形成できる薄膜酸化物超
電導体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a thin film oxide superconductor that can form an oxide superconductor in a thin film state of any shape on a substrate surface at high speed and with high precision. It is.
従来の技術
従来の膜状酸化物超電導体の製造方法として、スパッタ
リングによる製造方法が知られている。BACKGROUND OF THE INVENTION As a conventional method for manufacturing film-like oxide superconductors, a method using sputtering is known.
これは、酸化物超電導体焼結体、たとえば、Ｂ ａ Ｐ
ｂｏ、７Ｂ ｉｏ、ｓ ○３ （ＢＰＢ）をターゲッ
トとし、酸素を少し含むアルゴンガス中でスパッタリン
グにより、基板上に薄膜を形成するものである。This is an oxide superconductor sintered body, for example, B a P
A thin film is formed on a substrate by sputtering in argon gas containing a small amount of oxygen using bo, 7B io, s ○3 (BPB) as a target.
発明が解決しようとする問題点
しかし、従来例のこのような製造方法に基づくものでは
、膜形成速度が約１μｍ／時間と遅いこと、また真空中
で形成しなければならないことから、大型のものが得に
くい、また加工技術上の問題から、精度のよい加工がで
きないなど、生産性に種々の問題があった。Problems to be Solved by the Invention However, in the conventional manufacturing method, the film formation rate is slow at about 1 μm/hour, and the film must be formed in a vacuum, so it is difficult to produce large-sized films. There have been various problems with productivity, such as difficulty in obtaining high-quality materials and the inability to process with high precision due to problems in processing technology.
本発明はかかる点に霞みなされたもので、基板上に、１
０００人〜数μｍ厚みの任意の形状の薄膜を高速、かつ
精度良く形成できる薄膜酸化物超電導体の製造方法を提
供することを目的としている。The present invention solves this problem, and has one layer on the substrate.
It is an object of the present invention to provide a method for manufacturing a thin film oxide superconductor, which can form a thin film of any shape with a thickness of 1,000 to several μm at high speed and with high precision.
問題点を解決するための手段
本発明は上記問題点を解決するため、層状ペロブスカイ
ト構造酸化物超電導体粉末粒子４０〜９８重量％と、こ
れを固着するためのガラス成分６０〜２重量％からなる
粉末を、溶液状感光性樹脂中に分散させ、耐熱性基板上
に塗布し乾燥後、マスクを用いて、所定の形状に露光、
現像することによって、前記所定の形状部分以外の塗布
膜を除去し、その後熱処理によって、耐熱性基板上に焼
き付けるという生産性および精度に優れた薄膜酸化物超
電導体の製造方法を提供するものである。Means for Solving the Problems In order to solve the above problems, the present invention consists of 40 to 98% by weight of layered perovskite structured oxide superconductor powder particles and 60 to 2% by weight of a glass component for fixing the particles. The powder is dispersed in a photosensitive resin solution, applied onto a heat-resistant substrate, dried, and then exposed to light in a predetermined shape using a mask.
The present invention provides a method for manufacturing a thin film oxide superconductor with excellent productivity and precision, in which the coated film other than the predetermined shape portion is removed by development, and then baked on a heat-resistant substrate by heat treatment. .
作用
本発明は、前記した製造方法により、基板上に、任意の
形状の薄膜酸化物超電導体を精度良く、かつ高速に形成
することができる。Function: According to the present invention, a thin film oxide superconductor having an arbitrary shape can be formed on a substrate with high precision and at high speed by the above-described manufacturing method.
実施例
（実施例１）
酸化イツトリウム（Ｙ２Ｏ２）、酸化バリウム（Ｂ ａ
Ｏ）と酸化銅（Ｃｕ Ｏ）を、Ｙｏ、４Ｂａ０．６Ｃ
ｕ、の比で含むようそれぞれ秤量し、混合の後、９５０
℃の空気中で５時間焼成した。これをもう一度粉砕、混
合した後、９５０℃の空気中で２４時間焼成し、再度粉
砕し、８３０℃の空気中で１時間焼成した後、粉砕し焼
結体粉末粒子を得た。Example (Example 1) Yttrium oxide (Y2O2), barium oxide (B a
O) and copper oxide (CuO), Yo, 4Ba0.6C
Weigh each so as to contain them in the ratio of u, and after mixing, 950
It was baked in air at ℃ for 5 hours. This was crushed and mixed once again, then fired in air at 950°C for 24 hours, crushed again, fired in air at 830°C for 1 hour, and then crushed to obtain sintered powder particles.
次に上記焼結体粉末粒子４０〜９８重量％と硼珪酸鉛ガ
ラス粉末６０〜２重量％を、オルソジアゾキノン−ノボ
ラック（ＡＺ） レジストに、合計で１０〜５０重量％
になるように加え、さらに溶剤を加えて、分散液の粘度
を調整した。溶剤は、ペーストの焼き付は時に飛散する
ものであれば特に制限はない。Next, 40 to 98% by weight of the above sintered powder particles and 60 to 2% by weight of the lead borosilicate glass powder are added to an orthodiazoquinone-novolac (AZ) resist for a total of 10 to 50% by weight.
The viscosity of the dispersion was adjusted by further adding a solvent. There is no particular restriction on the solvent as long as it causes the paste to sometimes scatter.
次に、研磨、洗浄されたアルミナ基板を、回転台の上に
とりつけ、上から前記分散液を滴下し、すく回転させる
ことによって、分散液を、アルミナ基板」二に一様に塗
布した。その後、９０℃で３０分ベータし、マスクを用
いて所定形状に、露光し、現像を行うことによって、所
定形状のみを基板上に形成した。その後、８００℃の空
気中で１０分間焼付処理を行った。室温まで冷却後、得
られた薄膜の電気抵抗を液体窒素（７７Ｋ）温度で測定
した結果、超電導性を示した。すなわちこのような方法
で形成した薄膜は、超を導体であった。さらにＸ線解析
で調べたところ、層状ペロブスカイト構造を示していた
。Next, the polished and cleaned alumina substrate was mounted on a rotating table, and the dispersion liquid was dropped onto the alumina substrate, and the dispersion liquid was uniformly applied to the alumina substrate by rotating the alumina substrate. Thereafter, the mixture was incubated at 90° C. for 30 minutes, exposed to light in a predetermined shape using a mask, and developed, thereby forming only the predetermined shape on the substrate. Thereafter, baking treatment was performed in air at 800° C. for 10 minutes. After cooling to room temperature, the electrical resistance of the obtained thin film was measured at liquid nitrogen (77 K) temperature, and the result showed superconductivity. In other words, the thin film formed by this method was a superconductor. Further X-ray analysis showed that it had a layered perovskite structure.
第１図は本発明の薄膜酸化物超電導体を、アルミナ基板
上に形成する場合の、構造の一実施例を示したものであ
る。第１図において、１はアルミナセラミック基板、２
は本実施例の方法により形成した薄膜酸化物超電導体層
である。FIG. 1 shows an example of a structure in which the thin film oxide superconductor of the present invention is formed on an alumina substrate. In Figure 1, 1 is an alumina ceramic substrate, 2
is a thin film oxide superconductor layer formed by the method of this example.
各層の厚みは、本実施例ではアルミナセラミック入店板
ｌが６３５μｍ、薄膜酸化物超電導体の厚みは１μｍで
ある。基板の厚みは、機械的強度がもてば任意である。In this example, the thickness of each layer is 635 μm for the alumina ceramic board 1, and 1 μm for the thin film oxide superconductor. The thickness of the substrate is arbitrary as long as it has mechanical strength.
薄膜の厚みは２分散液の粘度、固形分の分散量、基板回
転速度をかえたり、２度塗り、３度塗りなど多重塗りを
することによって、１０００人程度から５μｍ程度まで
任意に形成できる。The thickness of the thin film can be arbitrarily formed from about 1000 to about 5 μm by changing the viscosity of the two dispersions, the amount of solid content dispersed, and the rotation speed of the substrate, or by applying multiple coats such as two coats or three coats.
第２図は、本実施例の結晶構造である層状ペロブスカイ
ト構造の構成要素である、ペロブスカイト構造を示した
もので、図において、３はＣｕ、４は０，５はＹまたは
Ｂａである。層状ペロブスカイト構造は、この構成要素
がある周期をもって、層状に積み重なったものである。FIG. 2 shows a perovskite structure which is a component of the layered perovskite structure which is the crystal structure of this example. In the figure, 3 is Cu, 4 is 0, and 5 is Y or Ba. A layered perovskite structure is a structure in which these components are stacked in layers at a certain period.
実際超電導状態となっているものは、この構造から酸素
が適当にぬけたものと考えられる。In fact, it is thought that the superconducting state is due to the appropriate removal of oxygen from this structure.
ガラス粉末の量が２重量％よりも少ないと薄膜の結合力
が弱く、強度的に実用的なものが得られなかった。また
６０重■％を越えると、薄膜としての超電導体を得るの
が困難となった。したがって酸化物超電導体粉末粒子と
ガラス成分は、それぞれ４０〜９８重量％および６０〜
２重景％重量囲で好ましい。If the amount of glass powder was less than 2% by weight, the bonding strength of the thin film would be weak, and a film of practical strength could not be obtained. Moreover, when it exceeds 60% by weight, it becomes difficult to obtain a superconductor as a thin film. Therefore, the oxide superconductor powder particles and the glass component are 40-98% by weight and 60-98% by weight, respectively.
It is preferable in double view% weight range.
ガラス成分として、硼珪酸鉛ガラス以外に、硼珪酸鉛亜
鉛ガラス、硼珪酸ビスマスガラスおよび硼珪酸バリウム
ガラスで本実施例と同様の結果が得られた。Results similar to those in this example were obtained using lead-zinc borosilicate glass, bismuth borosilicate glass, and barium borosilicate glass as glass components other than lead borosilicate glass.
（実施例２）
酸化ランタン（Ｌａ２０ａ）、酸化バリウム（Ｂ ａ
Ｏ）と酸化銅（Ｃｕ Ｏ）を、Ｌａ１．ａ４Ｂ ａ Ｏ
，＋６ｃ ｕｌの比で含むようそれぞれ秤量し、混合の
後、実施例Ｉと同様にして、焼結体粉末粒子を得た。(Example 2) Lanthanum oxide (La20a), barium oxide (Ba
O) and copper oxide (CuO), La1. a4B a O
, +6 cu ul, and after mixing, sintered powder particles were obtained in the same manner as in Example I.
次に、この原料粉末を用いて、実施例１と同様のプロセ
スを経て、薄膜を形成した。得られた薄膜の電気抵抗を
液体ヘリウム（４Ｋ）温度で測定した結果、超電導性を
示した。すなわちこのような方法で形成した薄膜は、超
電導体であった。さらにＸ線解析で調べたところ、層状
ペロブスカイト構造を示していた。Next, using this raw material powder, a thin film was formed through the same process as in Example 1. The electrical resistance of the obtained thin film was measured at liquid helium (4K) temperature, and the result showed superconductivity. In other words, the thin film formed by this method was a superconductor. Further X-ray analysis showed that it had a layered perovskite structure.
焼結体粉末粒子とガラス成分の比を変えて作成した結果
は、やはり実施例１とほぼ同様であった。The results obtained by changing the ratio of the sintered body powder particles to the glass component were almost the same as in Example 1.
またガラス成分を変えた場合の結果も同様であった。The results were also similar when the glass components were changed.
（実施例３） 希土類酸化物（Ｌｕ、Ｙｂ、Ｔｍ、Ｅｒ、Ｈｏ。(Example 3) Rare earth oxides (Lu, Yb, Tm, Er, Ho.
Ｄｙ、Ｇｄ、Ｓｍ、Ｎｄの酸化物）、酸化バリウム（Ｂ
ａ Ｏ）と酸化！１ｉｉ（ＣｕＯ）を、酸化銅ｌに対
し、希土類酸化物と酸化物バリウムが、０．３および０
．７になるよう種々秤量し、混合の後、実施例１と同様
にして、焼結体粉末粒子を得た。oxides of Dy, Gd, Sm, Nd), barium oxide (B
a O) and oxidation! 1ii(CuO), rare earth oxide and barium oxide are 0.3 and 0 to copper oxide l.
．． After mixing, sintered powder particles were obtained in the same manner as in Example 1.
次に、この原料粉末を用いて、実施例１と同様のプロセ
スを経て、薄膜を形成した。得られた薄膜の電気抵抗を
液体ヘリウム（４Ｋ）温度で測定した結果、超電導性を
示した。すなわちこのような方法で形成した薄膜は、超
電導体であった。さらにＸ線解析で調べたところ、層状
ペロブスカイト構造を示していた。Next, using this raw material powder, a thin film was formed through the same process as in Example 1. The electrical resistance of the obtained thin film was measured at liquid helium (4K) temperature, and the result showed superconductivity. In other words, the thin film formed by this method was a superconductor. Further X-ray analysis showed that it had a layered perovskite structure.
焼結体粉末粒子とガラス成分の比を変えて作成した結果
は、やはり実施例１とほぼ同様であった。The results obtained by changing the ratio of the sintered body powder particles to the glass component were almost the same as in Example 1.
またガラス成分を変えた場合の結果も同様であった。The results were also similar when the glass components were changed.
以上述べた如く、本発明の方法によれば、基板上に、任
意の形状の薄膜酸化物超電導体を高速に形成することが
できる。As described above, according to the method of the present invention, a thin film oxide superconductor of any shape can be formed on a substrate at high speed.
本実施例の製造方法によれば、層状ペロブスカイト構造
を存する酸化勃起Ｔ１導体については、いずれの材料に
ついても適用できるものである。第２図は、実施例１の
結晶構造について、示したものであるが、実施例２〜３
の場合は、この構造において、Ｙ、Ｂａの代りに、それ
ぞれの実施例で用いられた、Ｃｕ、Ｏ以外の元素で置き
代えたものである。According to the manufacturing method of this embodiment, any material can be applied to the oxidized erect T1 conductor having a layered perovskite structure. FIG. 2 shows the crystal structure of Example 1, but Examples 2 to 3
In the case of , Y and Ba are replaced with elements other than Cu and O, which were used in the respective examples, in this structure.
本実施例では、基板としてアルミナ基板を用いたが、８
００℃程度の温度の熱処理に耐えるもので、化学的にも
安定なものであれば、この材料に限る必要のないことは
明らかである。In this example, an alumina substrate was used as the substrate.
It is clear that there is no need to limit the material to this material as long as it can withstand heat treatment at a temperature of about 00° C. and is chemically stable.
また本実施例では、基板の厚み、および薄膜酸化物超電
導体の厚みとして特定の値を用いたが、基板の厚みは任
意であり、また薄膜の厚みは、１０００人〜５μｍで任
意の厚みが得られる。また薄膜の形状については、露光
マスクの形状を変えることにより、任意のものが得られ
る。Further, in this example, specific values were used for the thickness of the substrate and the thickness of the thin film oxide superconductor, but the thickness of the substrate can be arbitrary, and the thickness of the thin film can be any thickness between 1000 and 5 μm. can get. Furthermore, any shape of the thin film can be obtained by changing the shape of the exposure mask.
本実施例では、感光性樹脂として、ＡＺレジスト（ホト
レジスト）を用いたが、本発明の方法では、光に当った
部分が、光に当ったことにより、現像液に対して不溶性
、もしくは可溶性となり、現像によりマスク形状のパタ
ーンが基板上に残せ、熱処理によって燃焼または飛散し
てなくなるようなものであれば、どれでもよいことは明
らかである。In this example, AZ resist (photoresist) was used as the photosensitive resin, but in the method of the present invention, the exposed area becomes insoluble or soluble in the developer due to exposure to the light. It is obvious that any material may be used as long as it can leave a mask-shaped pattern on the substrate by development and burns or scatters away by heat treatment.
本実施例の方法によれば、半導体などの製造プロセスで
用いられているホトリソグラフィー技術がそのまま適用
できるため、きわめて精度の高い、たとえば０．５μｍ
程度の微細パターンも形成できる。このような微細パタ
ーンの形成は、スクリーン印刷のような厚膜技術では不
可能であった。またスパツタリングにより形成した薄膜
を、ホトリソグラフィーとエツチング技術で加工するの
は、材料が酸化物であるため、エツチング速度の速いエ
ッチャントがなかなかないためやはり困難であった。し
たがって、極めて精度良く加工できることは、本発明の
重要な効果の一つである。According to the method of this embodiment, since the photolithography technology used in the manufacturing process of semiconductors can be applied as is, extremely accurate
It is also possible to form very fine patterns. Formation of such fine patterns has not been possible with thick film techniques such as screen printing. Furthermore, it has been difficult to process thin films formed by sputtering using photolithography and etching techniques because the material is an oxide and there are few etchants with a high etching rate. Therefore, one of the important effects of the present invention is that it can be processed with extremely high precision.
本発明の方法は、分散液塗布、露光、現像、焼き付けと
いった手法を用いるので、高速にできる２大型のものが
できる。大量にできるなど生産性の面からも優れたもの
である。Since the method of the present invention uses techniques such as dispersion coating, exposure, development, and baking, two large-sized products can be produced at high speed. It is also excellent in terms of productivity as it can be produced in large quantities.
発明の効果
以上述べた如く、本発明は、層状ペロブスカイト構造酸
化物超電導体粉末粒子４０〜９８重量％と、これを固着
するためのガラス成分６０〜２重量％からなる粉末を、
溶液状感光性樹脂中に分散させ、耐熱性基板上に塗布し
乾燥後、マスクを用いて、所定の形状に露光、現像する
ことによって、前記所定の形状部分以外の塗布膜を除去
し、その後熱処理によって、耐熱性基板上に焼き付ける
ことにより、基板上に、高速に任意の形状の薄膜酸化物
超電導体を形成できるようにしたものである。Effects of the Invention As described above, the present invention provides a powder consisting of 40 to 98% by weight of layered perovskite structure oxide superconductor powder particles and 60 to 2% by weight of a glass component for fixing the particles.
Dispersed in a photosensitive resin solution, applied onto a heat-resistant substrate, dried, exposed to light in a predetermined shape using a mask, and developed to remove the coating film other than the predetermined shape portion, and then By baking it onto a heat-resistant substrate through heat treatment, a thin film oxide superconductor of any shape can be formed on the substrate at high speed.
第１図は本発明の構造の一実施例を示す構造図、第２図
は、本発明に用いた酸化物超電導体の結晶構造である、
層状ペロブスカイト構造の構成要素である、ペロブスカ
イト構造を示した構造図であるや
１・・・・・・アルミナセラミック基板、２・・・・・
・薄膜酸化物超電導体、３・・・・・・Ｃｕ、４・・・
・・・０．５・・・・・・ＹまたはＢａ。FIG. 1 is a structural diagram showing an example of the structure of the present invention, and FIG. 2 is a crystal structure of the oxide superconductor used in the present invention.
These are structural diagrams showing a perovskite structure, which is a constituent element of a layered perovskite structure. 1...Alumina ceramic substrate, 2...
・Thin film oxide superconductor, 3...Cu, 4...
...0.5...Y or Ba.
Claims (5)
４０〜９８重量％と、これを固着するためのガラス成分
６０〜２重量％からなる粉末を、溶液状感光性樹脂中に
分散させ、耐熱性基板上に塗布し乾燥後、マスクを用い
て、所定の形状に露光、現像することによって、前記所
定の形状部分以外の塗布膜を除去し、その後熱処理によ
って、前記耐熱性基板上に焼き付けてなることを特徴と
する薄膜酸化物超電導体の製造方法。(1) A powder consisting of 40 to 98% by weight of layered perovskite structure oxide superconductor powder particles and 60 to 2% by weight of a glass component for fixing them is dispersed in a photosensitive resin solution, and a heat-resistant substrate is prepared. After coating and drying, the coating film is removed from areas other than the predetermined shape by exposing and developing it in a predetermined shape using a mask, and then baking it onto the heat-resistant substrate by heat treatment. A method for producing a thin film oxide superconductor characterized by:
として、Ａ−Ｂａ−Ｃｕ酸化物（ただしＡは、Ｙ、希土
類）を用いたことを特徴とする特許請求の範囲第（１）
項記載の薄膜酸化物超電導体の製造方法。(2) Claim (1) characterized in that A-Ba-Cu oxide (where A is Y or a rare earth) is used as the layered perovskite structure superconductor oxide powder particles.
A method for producing a thin film oxide superconductor as described in 1.
Ｈｏ、Ｄｙ、Ｇｄ、Ｅｕ、Ｓｍ、Ｎｄを用いたことを特
徴とする特許請求の範囲第（２）項記載の薄膜酸化物超
電導体の製造方法。(3) Rare earths include La, Lu, Yb, Tm, Er,
The method for manufacturing a thin film oxide superconductor according to claim (2), characterized in that Ho, Dy, Gd, Eu, Sm, and Nd are used.
鉛ガラス、硼珪酸ビスマスガラス、硼珪酸バリウムガラ
スを用いたことを特徴とする特許請求の範囲第（１）項
記載の薄膜酸化物超電導体の製造方法。(4) Thin film oxide superconductor according to claim (1), characterized in that lead borosilicate glass, lead zinc borosilicate glass, bismuth borosilicate glass, or barium borosilicate glass is used as the glass component. How the body is manufactured.
特徴とする特許請求の範囲第（１）項記載の薄膜酸化物
超電導体の製造方法。(5) The method for producing a thin film oxide superconductor according to claim (1), characterized in that a photoresist is used as the photosensitive resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62121915A JPS63285815A (en) | 1987-05-19 | 1987-05-19 | Manufacture of membranous oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62121915A JPS63285815A (en) | 1987-05-19 | 1987-05-19 | Manufacture of membranous oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63285815A true JPS63285815A (en) | 1988-11-22 |
Family
ID=14823060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62121915A Pending JPS63285815A (en) | 1987-05-19 | 1987-05-19 | Manufacture of membranous oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63285815A (en) |
-
1987
- 1987-05-19 JP JP62121915A patent/JPS63285815A/en active Pending
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