JPS63279231A - Optical wavelength converting element - Google Patents
Optical wavelength converting elementInfo
- Publication number
- JPS63279231A JPS63279231A JP11362987A JP11362987A JPS63279231A JP S63279231 A JPS63279231 A JP S63279231A JP 11362987 A JP11362987 A JP 11362987A JP 11362987 A JP11362987 A JP 11362987A JP S63279231 A JPS63279231 A JP S63279231A
- Authority
- JP
- Japan
- Prior art keywords
- face
- optical
- substrate
- wavelength conversion
- optical wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000013307 optical fiber Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はレーザー光を使用するレーザー加工分野あるい
は光化学エネルギ一応用分野に利用する光波長変換素子
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical wavelength conversion element used in the field of laser processing using laser light or the field of application of photochemical energy.
[従来の技術]
従来波長0.7終■以下の短波長領域においては、半導
体レーザーによる発振が困難なため、気体レーザーなど
の大型レーザーが使われており、大型化がさけられなか
った。その為5HG(Second Harmonic
Generation、第2高調波)発生現象を利用
し半導体レーザー光を半分の波長に変換する素子が作製
された。該素子の基板例としてADP、KDPやLiN
bO3等が用いられ光波長変換素子が作成されて来た。[Prior Art] Conventionally, in a short wavelength region of 0.7 mm or less, it is difficult to oscillate a semiconductor laser, so a large laser such as a gas laser has been used, and an increase in size has been inevitable. Therefore, 5HG (Second Harmonic
An element that converts semiconductor laser light into half the wavelength by utilizing the generation phenomenon (second harmonic) has been fabricated. Examples of substrates for this element include ADP, KDP, and LiN.
Optical wavelength conversion elements have been created using bO3 and the like.
[発す1の解決しようとする問題点]
従来使用されていたADP 、 KDPには透明波長領
域が狭く(前者は0.19〜1.5終■、後者は0.2
〜1.55pm)、潮解性を有しており、2次の非線形
光学定数が大きくない(前者はd=0.499 xlo
−”MKS、後者はd−0,43x 10−”MKS)
等の問題がありLiNb0i′cは、透明波長域の下限
が高く(0,4終1)、光破壊しきい値が小さい(0,
01GW/cm2.λ−1,061Lm)などの問題点
があった。[Problem to be solved in Issue 1] The conventionally used ADP and KDP have a narrow transparent wavelength range (the former has a wavelength range of 0.19 to 1.5 cm, and the latter has a wavelength range of 0.2 cm).
~1.55 pm), has deliquescent properties, and the second-order nonlinear optical constant is not large (the former is d = 0.499 xlo
-”MKS, the latter is d-0,43x 10-”MKS)
LiNb0i'c has a high lower limit of the transparent wavelength range (0,4 to 1) and a small photodestruction threshold (0,4 to 1).
01GW/cm2. There were problems such as λ-1,061Lm).
その為前2者では、余り大きな変換効率が得られず、後
者では、紫外域での高調波が得られないうえ高入力パワ
ーでは使用できない等の問題点を有していた。Therefore, with the former two methods, a very high conversion efficiency cannot be obtained, and with the latter method, harmonics in the ultraviolet region cannot be obtained and the method cannot be used at high input power.
本発明は上記問題点を解消した光波長変換素子を提供す
るものである。The present invention provides an optical wavelength conversion element that solves the above problems.
[問題点を解決するための手段]
本発明は、前述の問題点を解決すべくなされたものであ
り、単結晶基板に形成された光導波路の一端面に基本波
を入射し非線形光学効果にもとづいて発生した第2高調
波を取り出す光波長変換素子において、β−BaB2O
4単結晶を用いることを特徴とする光波長変換素子を提
供するものである。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and involves injecting a fundamental wave into one end surface of an optical waveguide formed on a single crystal substrate to produce a nonlinear optical effect. In the optical wavelength conversion element that extracts the second harmonic generated originally, β-BaB2O
The present invention provides an optical wavelength conversion element characterized by using a single crystal.
本発明は、β−Bai2O4基板の一端面にフォトレジ
ストをコートし、フォトリソグラフィーの技術により1
/シストに窓あけして、金属薄膜を蒸着しリフトオフ後
に、不活性ガス中で高温熱処理して金属を拡散し、先導
波路を形成することにより光波長変換素子を作成する。In the present invention, one end surface of a β-Bai2O4 substrate is coated with a photoresist, and then one
/A window is opened in the cyst, a metal thin film is deposited, and after lift-off, the metal is diffused by high-temperature heat treatment in an inert gas and a guide wave path is formed, thereby creating an optical wavelength conversion element.
また、β−BaB2O.単結晶の一端面にイオン拡散等
により構成された幅及び深さ数ILIの先導波路を有す
る光波長変換素子の基本波入射端面に、基本波を導波し
て来た光ファイバーの出射端面を結合し、さらに該導波
路により変換発生した第2高調波を、該光波長変換素子
端面の変換波出射部と、出射波導波用光ファイバーの入
射端面とを結合させて、導き出すこともできる。Moreover, β-BaB2O. The output end face of the optical fiber that has guided the fundamental wave is coupled to the fundamental wave input end face of an optical wavelength conversion element which has a leading wave path with a width and depth of several ILI formed by ion diffusion etc. on one end face of a single crystal. Furthermore, the second harmonic wave converted and generated by the waveguide can be led out by coupling the converted wave output portion of the end face of the optical wavelength conversion element and the input end face of the output waveguide optical fiber.
[実施例]
β−3aB2O4のZカッ8面にフォトレジストを2.
0舊謹厚にスピンコードする0次にフォトリソグラフィ
ーの技術に従って、先導波路部分に窓あけし、AI膜を
400人蒸スレリフトオフ法によって不要の部分を取り
去った後、Arガス雰囲気中で温度を1000℃に保ち
6時間熱処理してA1を拡散させる。その後酸素の欠損
を補うために、さらに02ガスを流しながら1時間熱拡
散を行なう。第1図が本実施例の構成を示す斜視図であ
り、β−BaB、0.基板lのZ−面上に、幅が4pm
、深さ2#L■のA1拡散光導波路2が形成されている
。光導波路2の屈折率口、は基板lのそれよりも大きく
なければならない。この様に作成された光導波路の一端
面に、レーザー光源3からの基本波5を集光レンズ4を
通して当てると基板1中に波長変換された第2高調波6
が発生する。[Example] Photoresist was applied 2.
According to the 0-order photolithography technique of carefully spin-coding, a window is made in the leading waveguide part, and unnecessary parts are removed from the AI film by a 400-person steam lift-off method, and then the temperature is lowered in an Ar gas atmosphere. Heat treatment is performed at 1000° C. for 6 hours to diffuse A1. Thereafter, in order to compensate for oxygen deficiencies, thermal diffusion was performed for 1 hour while flowing 02 gas. FIG. 1 is a perspective view showing the configuration of this example, in which β-BaB, 0. On the Z-plane of the substrate l, the width is 4pm.
, an A1 diffused optical waveguide 2 having a depth of 2#L■ is formed. The refractive index aperture of the optical waveguide 2 must be larger than that of the substrate l. When the fundamental wave 5 from the laser light source 3 is applied to one end surface of the optical waveguide created in this way through the condensing lens 4, a wavelength-converted second harmonic wave 6 is generated in the substrate 1.
occurs.
In蒸着膜を用いる以外は前記実施例と同じである。I
nは300 蒸着し、前記実施例と同じく光導波路を
形成するが、熱処理温度を800℃として7時間行なう
0幅3終層、深さ1鉢■である。This example is the same as the previous example except that an In vapor deposited film is used. I
n is 300. The optical waveguide is formed as in the previous example, but the heat treatment is carried out at 800° C. for 7 hours, with a width of 0, 3 final layers, and a depth of 1 pot.
第2図と第3図は本発明の実施例を示すものであり、本
発明による光波長変換素子の斜視図である。第2図の実
施例に基づいて説明する。2 and 3 show embodiments of the present invention, and are perspective views of an optical wavelength conversion element according to the present invention. This will be explained based on the embodiment shown in FIG.
多孔質ガラス等の基板8を光波長変換素子15が乗る様
に光波長変換素子用の溝lOを作り、また光ファイバー
1”l及び12が組み込める様にフォトリソグラフィー
により光フアイバー設置用の溝9及び8°を作成する。A groove 10 for the optical wavelength conversion element is made on the substrate 8 made of porous glass or the like so that the optical wavelength conversion element 15 can be placed thereon, and grooves 9 and 10 for installing the optical fiber are formed by photolithography so that the optical fiber 1''l and 12 can be installed. Create 8°.
光波長変換素子用の溝10の深さは、光導波路7の端面
7゛と光ファイバーの端面11’のコアが一致する様に
調整する。The depth of the groove 10 for the optical wavelength conversion element is adjusted so that the core of the end surface 7' of the optical waveguide 7 and the end surface 11' of the optical fiber coincide.
もちろん先導波路の他端と出射側の光ファイバーの端面
12°のコアも一致してなければならない。Of course, the other end of the leading waveguide and the core of the 12° end face of the output side optical fiber must also match.
第3図は第3番目の実施例であり、入射偏光ファイバー
11及び出射側光ファイバー12の端部に集光用レンズ
13及び14を設け、レーザー光ビームを絞る。基板8
等については前記実施例と同じである。FIG. 3 shows a third embodiment, in which condensing lenses 13 and 14 are provided at the ends of the input polarizing fiber 11 and the output optical fiber 12 to focus the laser beam. Board 8
etc. are the same as in the previous embodiment.
β−BaB2Osは透明波長領域の短波長限界が190
nmであり、入射基本波が380nmの紫外レーザ光ま
で使用可能であり、ADPやKDPと異なり潮解性を示
さない、また有効2次非線形光学定数がKDPのd36
の値の4倍と大きく、変換効率の大きい素子が得られる
。また光破壊しきい値が2MW/ca2 (λ−4,0
8μm)と大きく、LiNbO3の素子よりも大きな入
力パワーで使用が可能である。β-BaB2Os has a short wavelength limit of 190 in the transparent wavelength region.
It is possible to use ultraviolet laser light with an incident fundamental wave of 380 nm, and unlike ADP and KDP, it does not exhibit deliquescent properties, and the effective second-order nonlinear optical constant is d36 of KDP.
This is four times as large as the value of , and an element with high conversion efficiency can be obtained. In addition, the photodestruction threshold is 2MW/ca2 (λ-4,0
It is large (8 μm) and can be used with higher input power than LiNbO3 elements.
また、光波長変換素子作成の段階で既に、基本波入射用
及び第2高調波導波川光フアイバーを光波長変換素子の
入射部及び出射部に結合できるので、該光波長変換素子
を使用する段階では、入射波及び出射波路の位置合わせ
は不要となり、その為の手間が省け、該素子の取り付は
取り外しが簡単に行なえる。さらにフレキシブルな光フ
ァイバーを使用している為、該素子の設置場所を自由に
選ぶことがてきる。In addition, since the fundamental wave input and second harmonic waveguide optical fibers can already be coupled to the input and output parts of the optical wavelength conversion element at the stage of producing the optical wavelength conversion element, at the stage of using the optical wavelength conversion element, , positioning of the incident wave and the output wave path is no longer necessary, the effort for that is saved, and the element can be easily attached and removed. Furthermore, since flexible optical fibers are used, the installation location of the device can be freely selected.
第1図〜第3図は本発明にかかる光波長変換素子の構成
を示す斜視図である。
1−・・β−BaBJ<単結晶基板、2.7−・・光導
波路、3・・・レーザー光源、4・・・集光レンズ、5
・・・入射基本波、6・・・出射第2高調波、7°・・
・光導波路の端面、8・・・基板、9,9°・・・光フ
アイバー設置用の溝、10−・・光波長変換素子用の溝
、11.12・・・光ファイバー、11’、12’・・
・光ファイバーの端面、13:14・・・集光用レンズ
。
さ1 to 3 are perspective views showing the structure of the optical wavelength conversion element according to the present invention. 1-... β-BaBJ<single crystal substrate, 2.7-... Optical waveguide, 3... Laser light source, 4... Condensing lens, 5
...Incoming fundamental wave, 6...Outgoing second harmonic, 7°...
- End face of optical waveguide, 8... Substrate, 9,9°... Groove for installing optical fiber, 10-... Groove for optical wavelength conversion element, 11.12... Optical fiber, 11', 12 '...
・End face of optical fiber, 13:14...Lens for condensing light. difference
Claims (1)
射し非線形光学効果にもとづいて発生した第2高調波を
取り出す光波長変換素子において、β−BaB_2O_
4単結晶を用いることを特徴とする光波長変換素子。β-BaB_2O_
4. An optical wavelength conversion element characterized by using a single crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11362987A JPS63279231A (en) | 1987-05-12 | 1987-05-12 | Optical wavelength converting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11362987A JPS63279231A (en) | 1987-05-12 | 1987-05-12 | Optical wavelength converting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63279231A true JPS63279231A (en) | 1988-11-16 |
Family
ID=14617070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11362987A Pending JPS63279231A (en) | 1987-05-12 | 1987-05-12 | Optical wavelength converting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63279231A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265949A (en) * | 1993-03-12 | 1994-09-22 | Agency Of Ind Science & Technol | Nonlinear optical material composition and its production |
US7227680B2 (en) | 2001-05-25 | 2007-06-05 | Mitsubishi Materials Corporation | Optical wavelength conversion method, optical wavelength conversion system, program and medium, and laser oscillation system |
-
1987
- 1987-05-12 JP JP11362987A patent/JPS63279231A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265949A (en) * | 1993-03-12 | 1994-09-22 | Agency Of Ind Science & Technol | Nonlinear optical material composition and its production |
US7227680B2 (en) | 2001-05-25 | 2007-06-05 | Mitsubishi Materials Corporation | Optical wavelength conversion method, optical wavelength conversion system, program and medium, and laser oscillation system |
EP2138893A1 (en) | 2001-05-25 | 2009-12-30 | Mitsubishi Materials Corporation | Optical wavelength converting method, optical wavelength converting system, and laser oscilliation system |
EP2141536A1 (en) | 2001-05-25 | 2010-01-06 | Mitsubishi Materials Corporation | Optical wavelength conversion method and optical wavelength conversion system |
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