JPS63278380A - Semiconductor photodetecting device - Google Patents
Semiconductor photodetecting deviceInfo
- Publication number
- JPS63278380A JPS63278380A JP62115425A JP11542587A JPS63278380A JP S63278380 A JPS63278380 A JP S63278380A JP 62115425 A JP62115425 A JP 62115425A JP 11542587 A JP11542587 A JP 11542587A JP S63278380 A JPS63278380 A JP S63278380A
- Authority
- JP
- Japan
- Prior art keywords
- photodetector
- electrode
- light
- type electrode
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000004070 electrodeposition Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［概要］
同一半導体基板上に、形状が対称をなし、且つ、電極を
逆導電型にした一対の受光素子を設け、該受光素子から
の配線も対称的に構成した受光装置である。[Detailed Description of the Invention] [Summary] A pair of light-receiving elements having symmetrical shapes and electrodes of opposite conductivity types are provided on the same semiconductor substrate, and wiring from the light-receiving elements is also configured symmetrically. It is a light receiving device.
このような受光装置は、光信号の強度雑音を相殺できて
、受信レベルが向上する。Such a light receiving device can cancel the intensity noise of the optical signal and improve the reception level.
［産業上の利用分野］
本発明は半導体受光装置に係り、特に、高性能な半導体
受光装置に関する。[Industrial Field of Application] The present invention relates to a semiconductor light receiving device, and particularly to a high performance semiconductor light receiving device.
現在まで、長波長帯光通信はレーザの直接強度変調、受
光素子の直接検波という使い易くて安定なシステムを用
いて発展してきた。To date, long-wavelength optical communications have been developed using easy-to-use and stable systems such as direct intensity modulation of lasers and direct detection of light receiving elements.
しかし、昨今、一層高速で大容量な情報量を伝送するた
めに、周波数や位相を変調して伝送するシステム、所謂
、コヒーレント光伝送システムが脚光を浴びてきており
、それに適応できる高性能な受光装置が要望されている
。However, in recent years, so-called coherent optical transmission systems, systems that modulate frequency and phase for transmission, have been attracting attention in order to transmit large amounts of information at higher speeds. equipment is required.
［従来の技術と発明が解決しようとする問題点］コヒー
レント光通信用の受光装置としては、レーザ光の強度雑
音を低減させることが感度向上のために必要と考えられ
、その雑音を相殺する目的でＤ Ｂ ＯＲ（Ｄｕａｌ
Ｂａ１ａｎｃｅｄ ０ｐｔｉｃａｌ Ｒｅｃｅｉｖｅｒ
；デュアルバランス型光受信器）が提案され、例えば
、２個の単体受光素子（フォトダイオード）を直列に外
部配線で接続して、そのような構造のＤＢＯＲによって
、コヒーレント光伝送システムの検討が続けられている
。[Prior art and problems to be solved by the invention] As a light receiving device for coherent optical communication, it is considered necessary to reduce the intensity noise of laser light in order to improve sensitivity, and the purpose of canceling this noise is to reduce the intensity noise of the laser beam. D B OR (Dual
Ba1anced Optical Receiver
A dual-balanced optical receiver) has been proposed, and studies continue to explore coherent optical transmission systems using, for example, a DBOR with such a structure, in which two individual light-receiving elements (photodiodes) are connected in series with external wiring. It is being
しかし、ＧＨｚ級の高周波領域では配線の非対称性によ
っても特性が非対称になり、上記例のような２個の単体
受光素子を接続しただけの構造では、リアクタンスやキ
ャパシタンスが相異して、十分に相殺できないと思われ
る。However, in the GHz-class high frequency range, the characteristics become asymmetric due to the asymmetry of the wiring, and a structure in which only two individual photodetectors are connected, as in the example above, has different reactances and capacitances, making it difficult to It seems that it cannot be offset.
本発明は、そのような問題点を低減させる半導体受光装
置を提案するものである。The present invention proposes a semiconductor light receiving device that reduces such problems.
［問題点を解決するための手段］
その目的は、同一半導体基板上に一対の受光素子が対称
形をなして設けられ、該一対の受光素子はｎ型電極とｐ
型電極とがお互いに逆位置になって対称しており、且つ
、該一対の受光素子から導出する配線が対称をなしてい
る半導体受光装置によって達成される。[Means for solving the problem] The purpose is to provide a pair of light receiving elements symmetrically on the same semiconductor substrate, and the pair of light receiving elements have an n-type electrode and a p-type electrode.
This is achieved by a semiconductor light-receiving device in which the type electrodes are symmetrical and opposite to each other, and the wiring led out from the pair of light-receiving elements is symmetrical.
また、このような受光素子と他の能動素子とを同一半導
体基板上に構成させた半導体受光装置に構成する。Moreover, such a light receiving element and other active elements are configured in a semiconductor light receiving device on the same semiconductor substrate.
［作用］
即ち、本発明は、対称形状で、お互いに電極の導電型を
逆にした一対の受光素子を同一基板上に設け、且つ、導
出する配線も対称的に構成する。[Function] That is, in the present invention, a pair of light-receiving elements having a symmetrical shape and electrodes having opposite conductivity types are provided on the same substrate, and the leading wiring is also configured symmetrically.
また、このような受光素子と他の能動素子とをモノリシ
ックに構成する。Further, such a light receiving element and other active elements are monolithically configured.
そうすれば、雑音が効果的に相殺できて、受信レヘルが
向上する受光装置が得られる。By doing so, it is possible to obtain a light receiving device in which noise can be effectively canceled and the reception level is improved.
［実施例］ 以下、図面を参照して実施例によって詳細に説明する。[Example] Hereinafter, embodiments will be described in detail with reference to the drawings.
第１図（ａｌは本発明にかかる受光装置の平面図、第１
図（′ｂ）は同図（′ｂ）のＡＡ’断面図である。同図
において、Ｄ、Ｄ’は一対の受光素子、１はＩｎＰ基板
、２．２’はｎ−−Ｇａ１ｎＡｓ受光素子基板、３゜３
“はｎ型電極、４，４“はｐ型電極、 ５． ６゜６
“は配線、７．８．８”は接続電極を示している。FIG. 1 (al is a plan view of the light receiving device according to the present invention,
Figure ('b) is a sectional view taken along line AA' in Figure ('b). In the figure, D and D' are a pair of light receiving elements, 1 is an InP substrate, 2.2' is an n--Ga1nAs light receiving element substrate, 3°3
" is an n-type electrode, 4,4" is a p-type electrode, 5. 6゜6
"7.8.8" indicates the wiring and connection electrodes.
本実施例はＩｎＰ基板１上の対称位置に、ｎ−−Ｇａｌ
ｎＡｓ受光素子層２，２“の２つがメサ状に設けられ、
その素子層２，２′に一対の受光素子り。In this example, n--Gal is placed at a symmetrical position on the InP substrate 1.
Two nAs light receiving element layers 2, 2'' are provided in a mesa shape,
A pair of light receiving elements is provided in the element layers 2 and 2'.
Ｄｏが作製されて、受光素子ＤＯｎ型電極電極受光素子
Ｄ“のｎ型電極３′とは電極位置が逆になり、また、受
光素子ＤＯｐ型電極電極受光素子Ｄ°のｐ型電極４“と
も電極位置が逆になっているが、受光素子りのｎ型電極
３と受光素子Ｄ“のｐ型電極４′とは電極位置が対称し
ており、且つ、受光素子りのｐ型電極４と受光素子Ｄ°
のｎ型電極３°とも電極位置が対称をなしている。Do is fabricated, and the electrode position is opposite to that of the n-type electrode 3' of the light-receiving element DOn type electrode light-receiving element D'', and also the p-type electrode 4'' of the light-receiving element D° Although the electrode positions are reversed, the n-type electrode 3 on the light-receiving element and the p-type electrode 4' on the light-receiving element D'' are symmetrical in electrode position, and the p-type electrode 4 on the light-receiving element is symmetrical. Photodetector D°
The positions of the n-type electrodes 3° are symmetrical.
従って、これらの電極下の素子層には同一導電型の領域
が設けられていて（第１図（ト））参照）、一対の受光
素子り、Ｄ’はｐ型頭域とｎ型領域とを交互に並列にし
た櫛形状の横型ＰＩＮダイオードである。そして、画素
子は対称形をなしているものである。Therefore, regions of the same conductivity type are provided in the device layer under these electrodes (see Figure 1 (G)), and D' is the p-type head region and the n-type region. This is a comb-shaped horizontal PIN diode in which the PIN diodes are alternately arranged in parallel. The pixel elements are symmetrical.
更に、配線６．６”が対称しており、接続電極８．８′
も対称位置にある。なお、接続電極７は信号の出力端、
接続電極８．８“は電源端で、第２図に第１図で説明し
た受光装置の回路図を示している。Furthermore, the wiring 6.6" is symmetrical, and the connection electrode 8.8'
are also in symmetrical positions. Note that the connection electrode 7 is a signal output end,
The connection electrode 8.8'' is a power supply terminal, and FIG. 2 shows a circuit diagram of the light receiving device explained in FIG. 1.
このように作製すれば、フォトダイオード（受光素子）
の対称性が極めて良好になり、レーザ光の強度雑音を高
効率に相殺できる。If manufactured in this way, a photodiode (light receiving element)
The symmetry of the laser beam becomes extremely good, and the intensity noise of the laser beam can be canceled out with high efficiency.
次に、第３図は上記の受光装置を使用する応用例を示し
ている。即ち、コヒーレント光伝送の基本例として、受
信部において光ファイバＦによって伝送されてきた信号
光りを局部発振光Ｌｘによって干渉させて、精度良く位
相変調信号を取り出す方式が知られているが、従来、フ
ォトカプラＣに入力した後は不要であった一方の光ファ
イバＦ°をそのまま活かし、本発明にかかる受光装置の
一方の受光素子Ｄ°に入力して、２つの信号光を画素子
から５０％ずつ取り出す。その時、両受光素子り、Ｄ’
に生じる光電流ｉ、ｉ“は差動合成されるが、その位相
がπだけずれるために出力はその和となって得られる。Next, FIG. 3 shows an application example using the above light receiving device. That is, as a basic example of coherent optical transmission, a method is known in which a signal light transmitted by an optical fiber F is interfered with a local oscillation light Lx in a receiving section to extract a phase modulated signal with high precision. One of the optical fibers F°, which was unnecessary after being input to the photocoupler C, is utilized as is and inputted to one of the light receiving elements D° of the light receiving device according to the present invention, and the two signal lights are 50% removed from the pixel element. Take them out one by one. At that time, both light receiving elements, D'
The photocurrents i and i'' generated in the two are differentially combined, but since their phases are shifted by π, the output is obtained as the sum of the two.
一方、信号光に重畳してきた強度雑音の位相はランダム
なために、受光素子り、Ｄ’の雑音はその差が出力にな
って、その結果として強度雑音は低減される。On the other hand, since the phase of the intensity noise superimposed on the signal light is random, the difference between the noises of the light receiving element and D' becomes the output, and as a result, the intensity noise is reduced.
次に、第４図は上記の受光素子Ｄ（Ｄ’）と接合型電界
効果トランジスタ（Ｊ−ＦＥＴ）ＴとをＩｎＰ基板１上
に搭載させた断面図を示している。Next, FIG. 4 shows a cross-sectional view of the above-mentioned light receiving element D (D') and junction field effect transistor (J-FET) T mounted on the InP substrate 1. As shown in FIG.
最近、光素子と電子素子をモノリシックに作製する光電
子集積回路（ＯＢＩＣ）の研究が進んでいるが、本発明
にかかる受光装置も第３図のように構成して、容易な製
造プロセスで集積化が可能であり、受信用０ＥＩＣとし
て利用できるものである。Recently, research on optoelectronic integrated circuits (OBICs) in which optical elements and electronic elements are fabricated monolithically has been progressing, and the light receiving device according to the present invention can also be configured as shown in Figure 3 and integrated through an easy manufacturing process. is possible and can be used as a receiving 0EIC.
以上のように、本発明にかかる受光装置によれば、レー
ザ光の強度雑音を効率良く相殺できて、受信信号レベル
を高めることができる。As described above, according to the light receiving device according to the present invention, the intensity noise of laser light can be effectively canceled out, and the received signal level can be increased.
［発明の効果］
上記の説明から明らかなように、本発明にががる半導体
受光装置は顕著に強度雑音を低減できて、受信レベルを
向上し、コヒーレント光伝送の発展に役立つものである
。[Effects of the Invention] As is clear from the above description, the semiconductor light receiving device according to the present invention can significantly reduce intensity noise, improve reception level, and contribute to the development of coherent optical transmission.
第１図（ａ）、 （ｂ）は本発明にかかる受光装置の平
面図と断面図、
第２図は本発明にかかる受光装置の回路図、第３図は本
発明にかかる受光装置の応用例を示す図、
第４図は本発明の受光装置を搭載したＯＢＩＣの断面図
である。
図において、
Ｄ、Ｄ’は受光素子、 １はＩｎＰ基板、２．２′は
ｎ”’ −ＧａｌｎＡｓ受光素子層、３．３°はｎ−電
極、 ４．４′はｐ−電極、５．６．６“は配線、 ？
、８．８’は接続電極、Ｆは光ファイバ、 Ｃは
フォトカブラ、Ｌは信号光、 Ｌｘは局部発振
光、Ｔは接合型トランジスタ
を示している。
巻延引に小）ろうυ巴第１置
館 １ 図
レト、イ壬−明に〃いろ１項？尤萼遣氏ロ芸ン呵４ンＡ
３２ 図
本発明に小）ろ受光ノど」りへ用イ列Ｅ水Ｖ閃Ｎ受ゴ→
］にηλ）ろ毛さ慴循軌し鴫Ｅｔｃつ１叱り−６１）し
≧）第 ４ 図1(a) and (b) are a plan view and a sectional view of a light receiving device according to the present invention, FIG. 2 is a circuit diagram of a light receiving device according to the present invention, and FIG. 3 is an application of the light receiving device according to the present invention. FIG. 4 is a cross-sectional view of an OBIC equipped with the light receiving device of the present invention. In the figure, D and D' are light receiving elements, 1 is an InP substrate, 2.2' is an n"'-GalnAs light receiving element layer, 3.3° is an n-electrode, 4.4' is a p-electrode, and 5. 6.6" is the wiring, ?
, 8.8' is a connection electrode, F is an optical fiber, C is a photocoupler, L is a signal light, Lx is a local oscillation light, and T is a junction transistor. Volume extension and small) Rou υ Tomoe 1st place 1 Figure Reto, I Mi - Akira Iro 1 section? 4-A
32 Figure (Small) according to the present invention A column E water V flash N receiver →
] to ηλ) Romo, circulation, etc. 1 scolding-61) and ≧) Fig. 4
Claims (2)
して設けられ、該一対の受光素子はｎ型電極とｐ型電極
とがお互いに逆位置になつて対称しており、且つ、該一
対の受光素子から導出する配線が対称をなしていること
を特徴とする半導体受光装置。(1) A pair of light-receiving elements are provided symmetrically on the same semiconductor substrate, and the pair of light-receiving elements are symmetrical with their n-type electrodes and p-type electrodes in opposite positions, and A semiconductor light-receiving device characterized in that wirings led out from the pair of light-receiving elements are symmetrical.
板上に構成されていることを特徴とする特許請求の範囲
第１項記載の半導体受光装置。(2) A semiconductor light-receiving device according to claim 1, wherein the light-receiving element and other active elements are formed on the same semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62115425A JPS63278380A (en) | 1987-05-11 | 1987-05-11 | Semiconductor photodetecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62115425A JPS63278380A (en) | 1987-05-11 | 1987-05-11 | Semiconductor photodetecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63278380A true JPS63278380A (en) | 1988-11-16 |
Family
ID=14662251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62115425A Pending JPS63278380A (en) | 1987-05-11 | 1987-05-11 | Semiconductor photodetecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63278380A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252852A (en) * | 1989-03-14 | 1993-10-12 | Fujitsu Limited | Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration |
| WO2007033610A1 (en) * | 2005-09-26 | 2007-03-29 | Hongkong Applied Science And Technology Research Institute Co., Ltd. | Photo-detectors and optical devices incorporating same |
| JP2009141308A (en) * | 2007-12-05 | 2009-06-25 | Fujifilm Corp | Photodiode |
| JP2011520258A (en) * | 2008-05-05 | 2011-07-14 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | Nanowire-based photodiode |
| JP2018082089A (en) * | 2016-11-17 | 2018-05-24 | 日本電信電話株式会社 | Photodetector |
-
1987
- 1987-05-11 JP JP62115425A patent/JPS63278380A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252852A (en) * | 1989-03-14 | 1993-10-12 | Fujitsu Limited | Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration |
| WO2007033610A1 (en) * | 2005-09-26 | 2007-03-29 | Hongkong Applied Science And Technology Research Institute Co., Ltd. | Photo-detectors and optical devices incorporating same |
| JP2009141308A (en) * | 2007-12-05 | 2009-06-25 | Fujifilm Corp | Photodiode |
| JP2011520258A (en) * | 2008-05-05 | 2011-07-14 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | Nanowire-based photodiode |
| JP2018082089A (en) * | 2016-11-17 | 2018-05-24 | 日本電信電話株式会社 | Photodetector |
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