JPS63276780A - Manufacture of magnetic memory element - Google Patents

Abstract

PURPOSE:To improve the transmission stability of a Bloch line couple by providing an aluminum film pattern on the stabilized area of a stripe domain constituting a magnetic memory element using the vertical Bloch line couple as a memory holder. CONSTITUTION:The pattern 3 made of an aluminum film is disposed on the area where the domain needs to be held on a stripe domain holding layer 1, and an auxiliary pattern 5 made of aluminum film is so disposed as sandwiching the separated areas along said pattern 3. Thereafter, a chip is heat-treated at 600-800 deg.C in ambient atmosphere of air or nitrogen for 30-60min, and the saturation magnetization of a domain holding layer 12 under the pattern is selectively made smaller. Then, the patterns 3 and 5 are separated, and on their both end sides, a domain generator and a local in-plane magnetism generation means 8 and 9 are disposed. As a result, the steep film thickness difference of the holding layer surface around the stabilized domain can be eliminated, and the ununiformity of the potential wells of a magnetic wall part can be eliminated.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a nonvolatile ultra-high density solid state magnetic memory element.

(Prior art) This magnetic memory element includes an information reading means, an information writing means, and an information storage means, and exists in a ferromagnetic film (including a ferrimagnetic film) whose easy magnetization direction is perpendicular to the film surface. A means is provided for holding and transferring adjacent vertical Bloch lines (hereinafter referred to as VBL) formed in the Bloch domain wall around the stripe domain as a pair within the Bloch domain wall. For example, when the element configuration is a major line and a minor loop configuration, the major line uses bubbles as information carriers, the minor loop consists of striped domains, and the VBL pairs existing in the surrounding Bloch domain wall are used as information carriers. To show the overall flow of information, first, the information written by the bubble generator (column of bubble presence/absence) moves along the write major line. When one page of information is written on the major line, in order to store it in the minor loop, the information on the major line indicated by the presence or absence of bubbles is transferred to the minor loop in the form of a VBL pair. Therefore, the write transfer gate has a function of converting the presence or absence of a bubble into the presence or absence of a VBL pair. The minor loop is composed of Bloch domain walls that can hold VBL pairs. Further, the minor loop has a function of reading out the VBL pair of the striped domain domain wall and moving it to the transfer gate as necessary. Information transfer from the minor loop to the read major line involves converting VBL pairs to bubbles. The bubble detector reads the converted bubble presence/absence column. In this way, by configuring the minor lube with striped domains existing in the bubble material and using VBL pairs instead of bubbles as information carriers on the minor lube, the storage density can be improved by approximately two orders of magnitude compared to bubble elements. can be achieved.

In this device, an important technique is to stably arrange a large number of magnetic domains at predetermined positions on the chip.

One way to deal with this is to move the stripe domain domain wall to the outside of the trench boundary layer thickness step portion formed in the stripe domain retention layer (Japanese Patent Application No. 6O-0
79658). The reason for this is that when a stripe domain is set to include the trench and the outside of its boundary, the film thickness step at the trench boundary generates a demagnetizing field that prevents the domain wall outside the boundary from approaching the film thickness step. When the domain wall position is stabilized in this way, the domain wall becomes
It is possible to respond to the Lux magnetic field for driving the BL pair without any interference, and moreover, the response of the domain wall can be made reversible.

This is a necessary condition for stabilizing the VBL pair-holding domain wall. On the other hand, if the striped domain is confined within the trench,
The film thickness step generates a demagnetizing field that strongly suppresses the stripe domains from moving outside the trench boundary. Therefore, the domain wall cannot freely move in response to an externally applied magnetic field. Therefore, it is necessary to initially set the stripe domain so that the stripe domain domain wall is located outside the trench boundary boundary film thickness step part.

FIGS. 9(a) and 9(b) show the main part of the region that stabilizes the stripe domain. An example of a formation technique for hollowing out the center 33 of the region in the domain holding layer 1 on the substrate 2 where the domain is desired and arranging a closed domain domain wall so as to surround the edge 34 is given in the International Application of Magnetics, published in April 1986. Academic conference (Intermag'86) DD-0
It is reported in 5. However, with this method, there is a considerable difference in the magnitude of the bias magnetic field that changes the bubble domain into a stripe domain between the region where the grooves are arranged parallel to each other and the region where there is no groove. It was found that the domain does not elongate unless the bias magnetic field is lower than in the region of . When the bias magnetic field is lowered to make the domain generated at one end of the grooved area expand in the area between the grooves, the domain will first extend at one of the areas in the grooved area and bubbles will be generated. It exits to the side opposite to the side where the device 8 is located, that is, the area where the conductor pattern 9 for domain coupling is located. As soon as this happens, the domain expands and creates a labyrinth-like domain over the entire area where 9 is located. For this reason, the domain that has been extending through the grooved region later than the domain that has just extended is obstructed by the stray domain and has difficulty extending to the point where it crosses under the conductor pattern 9 for domain joining. Another problem is that after stabilizing the domain surrounded by the domain wall outside the grooved portion 33, the tip of the domain may be affected by fluctuations in the bias magnetic field (in the opposite direction to 7) applied from the outside for stabilizing the domain, or by There was a high probability that it would start to expand arbitrarily due to temperature changes.

For these reasons, the above-mentioned method has been problematic as a method for stably arranging a large number of magnetic domains. Therefore,
We devised a way to eliminate these drawbacks and arrange the striped domains with good stability. Specifically, as shown in FIGS. 10(a) and 10(b), grooves 33 (first grooves) are created by selectively scraping the retention layer over the region where the striped domain is desired to be stabilized; In a method of stabilizing a domain domain wall around a groove at the center, an auxiliary groove 35 (second groove) is provided along the longitudinal direction of the political situation, separated from the political situation, and a striped domain stabilizing groove is provided. A domain generator and local magnetic field applying means were placed at both ends of the groove to facilitate the formation of the desired domains. By creating an auxiliary groove (second groove), it is possible to prevent the potential well for the domain extending from the striped domain stabilizing trench region from becoming suddenly deep, and to prevent the potential well from becoming deep suddenly. It became possible to extend the striped domain to a predetermined position with good stability.

FIG. 10 shows the configuration of the main part of the minor loop portion of the striped domain holding layer. FIG. 10(a) shows the main part of the striped domain holding layer. A groove 33 is formed on the striped domain holding layer 1 in a region where domains are to be held, and auxiliary grooves 3 are formed in adjacent areas in the longitudinal direction along this groove.
form 5. These grooves are obtained, for example, by selectively implanting ions such as H2+ into the region corresponding to the grooved portion of the striped domain holding layer, and then etching with hot phosphorus sulfuric acid. Domain generation conductor patterns 8 and 9 are arranged at both ends of the groove 33. In addition,
A domain generator having the shape shown in FIG. 3 was used for 8 and 9 so that a domain having the shape shown by 14 in FIG. 2 could be generated with good controllability. Figure 11 shows the closed domain wall 19 at 33
It shows a stable state around .

A second method is to selectively dig grooves on the surface of the stripe domain holding layer over regions where the stripe mains are desired to be stabilized, and stabilize the stripe domains in the grooves in the form of ring-shaped stripe domains.

Grooves 37 are formed on the surface of the striped domain holding layer 1 shown in FIG. 12 by selectively digging grooves only in areas where it is desired to hold the striped domains in a ring shape. This width is larger than the natural width Wo (width in no magnetic field state) of the stripe domain,
and increase by 2WQ or less. The reason for this is that if the groove is too narrow, the domains will not grow stably inside the groove. If it is too wide, the domain may run away from the inner layer thickness step boundary, or another domain may exist in the groove. Among the boundaries of the groove, the boundary 39 has a convex portion on the inside thereof, so it serves to attract the inner domain wall of the ring-shaped stripe domain 23 to the boundary 39, and the boundary 40 serves to attract the inner domain wall of the ring-shaped stripe domain 23 to It serves as a guide to prevent the domain walls from being too far apart. Furthermore, the width of the convex portion having 39 boundaries needs to be greater than or equal to Wo. If this is not done, when the ring-shaped stripe domain 23 is held in the groove, the repulsive interaction between the linear domains on both sides sandwiching the convex part with the boundary 39 will become strong, and the inner domain wall of the ring-shaped stripe domain will become the boundary. It will no longer be securely fixed directly below 39. When the grooves 37 are formed so as to satisfy the above conditions, the striped domains are fixed in a ring shape having the groove boundary 39 as the inner diameter, as shown in FIG. 12 and 23.

When the striped domain is maintained in this way, the potential well of the outer domain wall 24 (domain wall existing away from the boundary 39) of the ring-shaped domain is determined mainly by the demagnetizing field effect determined by the striped domain width, and No longer affected by minute unevenness in finished product. When an externally applied pulsed bias magnetic field is applied to such a domain wall, the domain wall movement becomes uniform over the entire domain wall 24. Therefore, by applying a pulse bias magnetic field in the same direction as the static bias magnetic field 27 for maintaining the domain, the information stored in the domain wall in the form of the presence or absence of the VBL pair is used to move the VBL pair using the generated gyroscopic force. In this case, the amount of movement can be easily controlled by the shape of the pulse bias magnetic field. In the figure, 25 and 26 are the directions of magnetization inside and outside the domain, respectively. However, in this method, since the effect of attracting the domain walls of the film thickness step boundary 39 and the film thickness step boundary 40 is the same, the inner domain wall of the ring-shaped domain often deviates from the boundary 39 depending on the condition of the step. Conversely, the outer domain wall is the boundary 4
Sometimes we are drawn to 0. Regarding the transfer gate section shown by 10 in FIG.
An example is shown in 9.

Therefore, a first groove is selectively dug on the surface of the striped domain holding layer over the region where the striped domain is stabilized, and the striped domain is stabilized in the groove in the form of a ring-shaped striped domain. A second step is dug on the outer side 41 of the outer boundary 40 of the trench.
created an area of By adopting the above-mentioned configuration, grooves are simply selectively dug on the surface of the stripe domain holding layer in the prior art over the area where the stripe domains are desired to be stabilized, and the stripe domains are formed into ring-shaped stripe domains in the grooves. This problem has been improved in the structure where the domain is stabilized by the shape, in which the domain tends to separate from the inner step boundary of the groove, and the problem with the initial setting of the striped domain for the minor loop has been solved. FIG. 13 shows a structure in which a large number of ring-shaped stripe domains are stabilized using this method.

(Problems to be Solved by the Present Invention) The drawback of these methods is that a step in film thickness is created on the surface of the domain holding layer. When patterned and used for setting bit positions for a VBL pair, discontinuities due to the above-mentioned thickness difference of the domain holding layer are included in the pattern, resulting in inconvenience. In addition, trenching requires an extra manufacturing process, and so-called flattening technology is also indispensable for eliminating film thickness differences in subsequent processes, resulting in technical difficulties and time losses in device fabrication. It will be accompanied by

In both of the above two methods, a steep thickness step is formed on the surface of the domain holding layer, which may cause problems in subsequent steps. The object of the present invention is to provide an ultrahigh-density solid-state magnetic memory element that incorporates a highly stable striped domain arrangement method that eliminates such film thickness differences as much as possible.

(Means for Solving the Problems) The first aspect of the present invention is to create two adjacent Bloch domain walls at stripe domain boundaries in a ferromagnetic film whose easy magnetization direction is perpendicular to the film surface. VBL consisting of VBL
In a magnetic memory element that uses a pair of striped domains as a storage carrier, a pattern (first pattern) formed of an aluminum film is selectively placed on the surface of the retention layer over a region where the striped domains are desired to be stabilized, and a pattern (first pattern) formed with an aluminum film is placed at the center of the pattern. Stabilize the domain wall around it. Furthermore, in this method, a pattern (
2nd pattern). After that, the chip is heat treated. By this heat treatment, only the saturation magnetization of the domain holding layer directly under the pattern formed of the aluminum film can be selectively reduced. Thereafter, a domain generator and local magnetic field application means were provided at both ends of the first pattern for stripe domain stabilization to facilitate the formation of the desired domains. Due to the effect of the second pattern part, it is possible to avoid a sudden deepening of the potential well for the domain extending out of the area sandwiched between the striped domain stabilizing patterns, and to It is now possible to stably extend the stripe domain to a predetermined position along the direction.

The configuration will be explained in detail below.

FIG. 1 shows the structure of the main part of the minor loop portion of the striped domain holding layer in the present invention. FIG. 1(a) shows the main part of a striped domain holding layer when the method of the present invention is used. A pattern 3 made of an aluminum film is placed in a region on the striped domain holding layer 1 where domains are to be held, and a pattern 5 made of an auxiliary aluminum film is placed between regions separated along the pattern.

After that, the chip was placed in air or nitrogen atmosphere for 60 minutes.
Heat treat at 0-800C for 30-60 minutes. In this way, the saturation magnetization of the striped domain retention layer directly under the pattern 12 in FIG. 1(b) can be selectively reduced. Thereafter, the patterns 3 and 5 are peeled off, and domain generators and local in-plane magnetic field generation means 8 and 9 are provided at both ends of the pattern portions.
are placed. Note that a domain generator having the shape shown in FIG. 3 was used for 8 in order to generate a domain having the shape shown by 14 in FIG. 2 with good control. Figures 4, 5, and 6 are 1
The process of forming a domain surrounding the region No. 2 is shown.

Another method of the present invention is to selectively place a pattern made of an aluminum film on the surface of the striped domain holding layer over a region in which the striped domains are desired to be stabilized, and then heat-treat the domain holding layer immediately below the pattern. The present invention is a magnetic memory element in which the stripe domains are stabilized in the form of ring-shaped stripe domains.

The configuration will be explained in detail below. A pattern 3 made of an aluminum film is selectively applied to the surface of the striped domain holding layer 1 shown in FIG. 1 only in the portion where the striped domain is desired to be held in a ring shape. The width of this pattern is larger than the natural width Wo (width in a non-magnetic field state) of the stripe domain and is about 2WQ or less. The reason for this is that if the width of this pattern portion is too narrow, the domains will not stably extend under the pattern portion. Also, if it is too wide, the domain may escape from the inner boundary of the pattern part,
Another domain may enter the pattern section. When the chip is heat-treated with the pattern formed of this aluminum film still attached, the saturation magnetization is reduced only in the region 20 directly under the aluminum film pattern 3.

Among the boundaries of the pattern portion, the boundary 21 has a region with large saturation magnetization inside thereof, and therefore serves to attract the inner domain wall of the stripe domain to the boundary 21. The boundary 22 serves as a guide to prevent the inner domain wall from being too far away from the ring-shaped stripe domain 21 when initially setting the ring-shaped stripe domain 23. The width of the region with large saturation magnetization having the boundary of 21 must be set to be equal to or larger than Wo. If this is not done, when the striped domains are held in a ring shape, the repulsive interaction between the linear domains on both sides sandwiching the region with high saturation magnetization having the boundary 21 will become strong, and the inner domain wall of the ring-shaped striped domains 23 will become stronger. boundary 2
1 will no longer be firmly fixed. When the stripe domain stabilizing region 20 is created by the above method, the stripe domain is fixed in a ring shape whose inner diameter is the boundary 21 of the region with high saturation magnetization, as shown by 23 in FIG.

When the striped domain is maintained in this way, the potential well of the domain wall outside the ring-shaped domain (domain wall that exists away from the boundary 21) is determined mainly by the demagnetizing field effect determined by the striped domain width, It is no longer affected by fine unevenness at the border. When an externally applied pulse bias magnetic field is applied to such a domain wall, the domain wall movement becomes uniform over the entire domain wall 24. Therefore, when the information stored in the domain wall in the form of the presence or absence of the VBL pair is moved using the gyroscopic force generated on the VBL pair by the pulse bias magnetic field applied in the same direction as the static bias magnetic field 7 for domain holding. , the amount of movement thereof can be easily controlled by the shape of the pulse bias magnetic field. In the figure, 25 and 26 are the directions of magnetization inside and outside the domain, respectively.

(Operation) The operation of stripe domain stabilization will be explained using FIGS. 2 to 6. First, by applying a bias magnetic field, the magnetization of the striped domain holding layer is saturated in the same direction as the magnetization in the domain around 12 that is desired to be stabilized. Thereafter, a current is applied to the domain generator 8 in the direction of the arrow, and the resulting magnetic field generates the domains shown at 14 in FIG. In order to create a domain with such a shape, it is first necessary to design the shape of the generator 8 so that the domain is generated along the upper edge 15 of the generator 8. An example of its specific shape is shown in FIG. Thereafter, as the absolute value of the bias magnetic field is decreased, the domain passes through the first pattern section and reaches the auxiliary pattern section 13 as shown in FIG.
Extend to an area. Thereafter, a current is applied to the domain generator 9 in the direction of the arrow shown in FIG. Due to the magnetic field caused by this current, the domains 14 are joined to each other at the lower end of the first pattern part, and conversely, a domain 17 surrounded by a closed domain wall surrounding the pattern of the container 1 is formed. When the externally applied magnetic field is reduced to zero, and its direction is reversed to the direction indicated by 7, and the strength of the magnetic field is increased, a domain 1 with a domain wall surrounding the first pattern portion is formed as shown in FIG.
7 is formed. This domain is used for VBL pair maintenance. On the other hand, the domains attached to the auxiliary second pattern are completely erased by this change in the bias magnetic field. In this way, the domain surrounded by the domain wall surrounding 12 was stabilized, but the potential well on the 8 side remained as deep as before, and the local bias magnetic field due to the conductor current was applied to the domain tip. If it is not possible to add the domain, there is a risk that the domain tip will extend due to changes in the temperature of the chip. Therefore, a third pattern section made of an aluminum film, shown as 6 in FIG. 1, is provided together with the first and second patterns. Then, the potential well in the region sandwiched by the pattern becomes shallower, and arbitrary extension of the domain tip can be prevented. The pattern also helps the domains to extend into the gate 10 in an orientation consistent with the longitudinal direction of the VBL-to-bubble conversion gate section 10 required for Bloch line memory during operation. It is sufficient to raise the potential well of the major line 11 only during operation by the conductor current magnetic field.

The present invention adopts the above-mentioned configuration, whereby grooves are selectively dug in the surface of the striped domain holding layer of the prior art over a region where the striped domains are desired to be stabilized.
It was possible to eliminate the steep thickness difference on the surface of the domain holding layer that occurred in the structure in which the striped domains were stabilized in the form of ring-shaped striped domains in the grooves.

(Example 1) A Qm bubble material (YSmLu)s(FeGa)50t2 garnet film was grown by LPE to a thickness of 2 pm on a Gd3Ga5012(111) substrate. After arranging the aluminum film pattern 3 (width 3 pm, arrangement period 12 pm) in the region where the stripe domain is to be stabilized so as to have the structure shown in Fig. 1, heat treatment is performed in air or nitrogen atmosphere, and then the pattern is peeled off. It was formed by On top of that, 5i02
A domain generator having the shape shown in FIG. 2 is arranged via a spacer 16 (0.5 pm thick), and by a series of operations starting from the domain generation described above, a closed domain wall surrounding 12 shown in FIG. 6 is created. Domain 17 was successfully formed.

Using Figure 7, the process of forming a striped domain in a ring shape is shown in the bubble domain when reading the information stored in the form of VBL pairs within the striped domain domain wall, which is a necessary condition for this device. A pattern formed of an aluminum film including a gate portion 10 for performing the function of storing data expressed in the form of bubbles on the major line 11 in the form of VBL pairs within the striped domain domain wall during conversion or writing. A specific operation process will be shown for an example of the shape. A bubble generator 28 and a conductive pattern 29 are placed at the tip 30 of the pattern section 20 to press the generated bubbles to the tip 30 in an area where the saturation magnetization is larger than that of the surrounding area. In advance, a magnetic field in the same direction as 26 is applied to the entire effective chip to saturate the magnetization of the entire chip in the direction 26. When a pulse current is applied to the bubble generator 28 while applying an appropriate bias magnetic field H2, a bubble is generated at 30, and the current generated from the conductor pattern 29 causes the bubble to extend in the direction of lO. This is prevented by a magnetic field so that when H3 is lowered, the bubble extends inside 20 along the boundary 21 of the region where the saturation magnetization is larger than the surrounding area.

Then, the stripe domains extending along the pattern section 3 have their tips at the introduction guides 31° and 31', respectively.
It becomes a U-shape.

A conductor pattern 32 is applied to this spherical stripe domain.
By applying a pulse current to
1' and the extended part.

The joined stripe domain shape has a bias magnetic field H2
It is determined by the action of domain wall surface tension, which attempts to minimize the domain wall surface energy. By adjusting the bias magnetic field H2,
Eventually, it becomes a ring-shaped striped domain as shown at 23 in FIG. A VBL pair, which is an information carrier, is written in the outer peripheral domain wall 24 of this domain 23. The groove 10 is for a gate connecting a major line 11 representing information in the form of the presence or absence of bubbles necessary for the Bloch line memory and a ring-shaped stripe domain portion storing information in the form of the presence or absence of VBL pairs.

FIG. 8 shows an example of a major/minor configuration in which a large number of units shown in FIG. 7 are arranged.

(Effects of the Invention) According to the present invention, the steep film thickness step on the surface of the retention layer around the stabilized domain, which had been a problem in the past, has been solved, and the V
Obstacles to the pattern for bit positioning of BL pairs have been removed. In addition, the non-uniformity of the potential well in the domain wall region during stripe domain stabilization can be removed as before, which increases the stability of Bloch line pair transfer, and thus improves the reliability of Bloch line memory. .

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an example of the main structure for holding domains in the present invention, and FIGS. 2 to 6 are diagrams showing the domain formation process in the present invention. FIG. 7 is a diagram showing another domain retention structure in the present invention. FIG. 8 is a diagram showing an example of a structure for stabilizing a large number of domains using the method shown in FIG. 7. FIGS. 9 and 10 are diagrams showing an example of a conventional domain stabilization method using a closed domain wall surrounding a grooved portion. Figure 11 is the first
FIG. 2 is a diagram showing a domain stabilized by the method of FIG. FIGS. 12 and 13 are diagrams showing examples of conventional methods for stabilizing ring-shaped domains. In the figure 1. domain retention layer, 2. substrate, 3. aluminum film pattern, 4. Boundary between the portion directly below the aluminum film pattern of the domain holding layer and the other portion, 5. Aluminum film pattern for auxiliary portion, 6. Aluminum film pattern for forming gate portion, 7. Bias magnetic field, 8.9.
Conductor pattern for domain generation, 10. Conversion gate section between Bloch line pair and bubble, 11. Major line, 12.12', portion directly under aluminum film pattern 3 in domain holding layer, 13. 14. A portion directly under the aluminum film pattern 5 in the domain holding layer. Magnetic domains generated by domain generator 8, 15. Edges of conductor pattern for domain generator, 16. Spacer, 1
7. Bloch line pair retention domain, 18.17 domain tip, 19.17 domain side wall, 20
．． Part directly below the aluminum film pattern in the domain holding layer, 21.22. Boundary between the portion immediately below the aluminum film pattern in the domain holding layer and the outside, 23. Ring-shaped striped domain, 24. Bloch line pair retaining domain wall, 25. Direction of magnetization within the domain, 26. Direction of magnetization outside the domain, 27. Ring-shaped domain binding part, 2
8. Conductor pattern for bubble generator, 29, Conductor pattern for preventing extension of generation domain, 30, Bubble memory generation section, 31.31', Striped domain tip introduction guide, 32. conductor pattern for striped domain coupling,
33. Domain holding layer hollowed out part, 34, edge of domain holding layer hollowed out part, 35, auxiliary domain holding layer hollowed out part, 36. Guide domain holding layer hollowed out part, 37. First ditch digging part, 38. central plateau, 39
．． Edge of Plateau, 40. Outer domain wall of ring-shaped domain, 41. Second trench digging section. Tei 2 Kutei 4 Zutei 5 Zutei b Zukyo 7 Zutei B 7/l //] Half q Figure<a> Half Il Figure half IZ Figure

Claims (4)

[Claims] (1) Bloch at the boundary of a stripe domain existing in a ferromagnetic (including ferrimagnetic) film that has information reading means, information writing means, and information storage means and whose easy magnetization direction is perpendicular to the film surface. 2 adjacent ones made in the domain wall
In a method for manufacturing a magnetic memory element having means for retaining and transferring pairs of vertical Bloch lines within a Bloch domain wall, an aluminum film is formed directly on the surface of a stripe domain retention layer over a region where stripe domains are arranged. a second aluminum film pattern for auxiliary use and a second aluminum film pattern for auxiliary use in two regions sandwiching the first aluminum film pattern formation region in the longitudinal direction of the first aluminum film pattern; After forming a third aluminum film pattern at a position corresponding to the middle of each pattern of the aluminum film, heat treatment is performed, and then a means for generating a domain and a local magnetic field is formed in the tip region of the first aluminum film pattern. A method for manufacturing a magnetic memory element, characterized by: (2) Bloch at the boundary of a stripe domain existing in a ferromagnetic (including ferrimagnetic) film that has information reading means, information writing means, and information storage means and whose easy magnetization direction is perpendicular to the film surface. 2 adjacent ones made in the domain wall
In a method for manufacturing a magnetic memory element having means for retaining and transferring pairs of vertical Bloch lines within a Bloch domain wall, an aluminum film is formed directly on the surface of a stripe domain retention layer over a region where stripe domains are arranged. auxiliary grooves are formed in two regions sandwiching the first aluminum film pattern formation region along the longitudinal direction of the first aluminum film pattern; A third groove is formed at a position corresponding to the middle of each pattern, and then heat treatment is performed, and domain generation and local magnetic field generation means are further formed in the tip region of the first aluminum film pattern. A method for manufacturing a magnetic memory element. (3) Boundaries of stripe domains existing in a ferromagnetic (including ferrimagnetic) film that has information reading means, information writing means, and information storage means and whose easy magnetization direction is perpendicular to the film surface. A method for manufacturing a magnetic memory element using a vertical Bloch line pair consisting of two adjacent vertical Bloch lines formed in a Bloch domain wall as a storage information unit, and having means for transferring the vertical Bloch line within the Bloch domain wall, A magnetic memory element characterized in that an aluminum film pattern is selectively formed on the surface of the ferromagnetic film, and then a ring-shaped stripe domain is formed by heat treatment to form a means for domain generation and local magnetic field generation. Production method. (4) Boundaries of stripe domains existing in a ferromagnetic (including ferrimagnetic) film that has information reading means, information writing means, and information storage means and whose easy magnetization direction is perpendicular to the film surface. A method for manufacturing a magnetic memory element using a vertical Bloch line pair consisting of two adjacent vertical Bloch lines formed in a Bloch domain wall as a storage information unit, and having means for transferring the vertical Bloch line within the Bloch domain wall, selectively forming an aluminum film pattern on the surface of the ferromagnetic film and digging grooves on the outside thereof;
A method for manufacturing a magnetic memory element, characterized in that the striped domains are heat-treated to form ring-shaped striped domains, and a means for generating domains and local magnetic fields is formed.