JPS63271118A - Encoder for which coherence luminous flux is utilized - Google Patents
Encoder for which coherence luminous flux is utilizedInfo
- Publication number
- JPS63271118A JPS63271118A JP10701087A JP10701087A JPS63271118A JP S63271118 A JPS63271118 A JP S63271118A JP 10701087 A JP10701087 A JP 10701087A JP 10701087 A JP10701087 A JP 10701087A JP S63271118 A JPS63271118 A JP S63271118A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor laser
- laser holder
- encoder
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004907 flux Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 27
- 230000001427 coherent effect Effects 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 15
- 238000009413 insulation Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 11
- 229920005989 resin Polymers 0.000 abstract description 7
- 239000011347 resin Substances 0.000 abstract description 7
- 125000000129 anionic group Chemical group 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 238000010422 painting Methods 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 1
- 238000007865 diluting Methods 0.000 abstract 1
- 125000002091 cationic group Chemical group 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920000180 alkyd Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は可干渉性光を利用したエンコーダーにおいて、
可干渉性光の光源としての半導体レーザホルダーとエン
コーダ一本体との絶縁化処理されたエンコーダーに関す
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an encoder using coherent light,
The present invention relates to an encoder in which a semiconductor laser holder as a light source of coherent light and an encoder body are insulated.
エンコーダーは、所謂、可干渉性光束を利用したリニア
ーエンコーダー、又はロータリーエンコーダーをフロッ
ピーディスクの駆動等のコンピューター機器、プリンタ
ー等の事務機器、あるいはＮＣ工作機械等の回転機構の
回転速度や回転速度変動量を検出するための手段として
利用されているが、いずれの用途でも、エンコーダーを
高密度化することで製品の小型化、機能向上等に直接結
びついている。ところが、半導体レーザホルダーと信号
グランドが接触しているため、エンコーダ一本体に取り
付けた場合、絶縁性が悪いと、例えば工作機械等に取り
付は位置検出器として利用した場合、取り付けられた装
置のフレームグランドに生ずるノイズ成分がエンコーダ
一本体を通じて信号処理回路のグランドに伝播し、誤動
作の原因となる。そのため、従来、エンコーダーの絶縁
手段としては、半導体レーザホルダーとエンコーダ一本
体との間にプラスチック性ワッシャー等を挟み防止して
きたが、この方法では、熱に依る変形で位置ずれを生じ
、絶縁効果は完全ではなく、部品点数の増加で望ましく
なかった。An encoder is a so-called linear encoder that uses coherent light flux, or a rotary encoder is used to encode the rotational speed or rotational speed fluctuation of a rotating mechanism such as computer equipment such as a floppy disk drive, office equipment such as a printer, or NC machine tool. In both applications, increasing the density of encoders directly leads to smaller products and improved functionality. However, since the semiconductor laser holder and the signal ground are in contact with each other, if the insulation is poor when attached to the encoder body, for example, if it is attached to a machine tool or used as a position detector, the attached device may be damaged. Noise components generated in the frame ground propagate through the encoder body to the ground of the signal processing circuit, causing malfunctions. Conventionally, the encoder has been insulated by inserting a plastic washer or the like between the semiconductor laser holder and the encoder body, but this method causes misalignment due to deformation due to heat, and the insulation effect is reduced. It was not perfect and the number of parts increased, which was undesirable.
さらに、半導体レーザホルダーをセラミック材料で加工
する手段もあるが、加工性に問題があり所望する形状が
得られなかった。Furthermore, there is a method of processing the semiconductor laser holder using a ceramic material, but there are problems with the processability and the desired shape cannot be obtained.
〔発明が解決しようとしている問題点〕本発明の目的は
半導体レーザホルダーとエンコーダ一本体との絶縁不良
を生じないエンコーダーを提供することにある。[Problems to be Solved by the Invention] An object of the present invention is to provide an encoder that does not cause poor insulation between the semiconductor laser holder and the encoder body.
また、本発明は、熱による変形を生じない絶縁効果が得
られる絶縁加工を施したエンコーダーを提供することを
目的とする。Another object of the present invention is to provide an encoder that has been subjected to an insulation process that provides an insulation effect that does not cause deformation due to heat.
〔問題点を解決するための手段（及び作用）〕本発明の
酸化皮膜および／または伝着塗装被膜が表面に形成され
ている半導体レーザホルダーを有することを特徴とする
可干渉性光束を利用したエンコーダーに関する。[Means (and effects) for solving the problem] A method using a coherent light beam characterized by having a semiconductor laser holder on whose surface the oxide film and/or transfer coating film of the present invention is formed. Regarding the encoder.
即ち、本発明によるエンコーダーは、半導体レーザホル
ダーに酸化被膜を形成し、絶縁化または半導体ホルダー
表面に直接もしくは酸化被膜を介して、アニオン系、又
は、カチオン系の上の電着塗装法に依り、所定の塗膜を
形成することによって１０１０Ω／ｃｒｄ以上の絶縁、
化したものである。That is, the encoder according to the present invention forms an oxide film on the semiconductor laser holder, insulates it, or coats the surface of the semiconductor holder directly or through the oxide film by electrodeposition coating on an anionic or cationic surface. Insulation of 1010Ω/crd or more by forming a prescribed coating film,
It has become.
酸化被膜又は電着塗装によって、半導体レーザホルダー
露出部に均一で、且つ薄い塗膜が形成でき、絶縁精度を
高めることができると共に、半導体レーザホルダーの穴
部にも非常に狭いギャップを通して確実に塗膜を形成す
ることができ、優れた導電防止効果が達成できるもので
ある。By using oxide film or electrodeposition coating, it is possible to form a uniform and thin coating on the exposed part of the semiconductor laser holder, which improves the insulation accuracy, and also allows the coating to be applied reliably to the hole of the semiconductor laser holder through a very narrow gap. A film can be formed and an excellent conduction prevention effect can be achieved.
本発明に依る半導体レーザホルダーとエンコーダ一本体
との絶縁処理の態様については第１〜３図に示される。Embodiments of the insulation treatment between the semiconductor laser holder and the encoder body according to the present invention are shown in FIGS. 1 to 3.
第２図は金属基材ｌ上に陽極酸化被膜２を形成した状態
の断面図である。第１，３図はそれぞれ電着塗装にて塗
膜３を形成した態様を示している。第３図は金属基材１
上に直接電着塗装にて塗膜３を形成した断面図である。FIG. 2 is a cross-sectional view of a state in which an anodic oxide film 2 is formed on a metal base material l. 1 and 3 each show an embodiment in which a coating film 3 is formed by electrodeposition coating. Figure 3 shows metal base material 1
It is a sectional view on which a coating film 3 is formed by direct electrodeposition coating.
第１図は、第２図に示される陽極酸化被膜２上に絶縁性
を一層確実にするために電着塗装にて塗膜３を形成した
断面図である。FIG. 1 is a sectional view showing a coating film 3 formed by electrodeposition on the anodic oxide coating 2 shown in FIG. 2 to further ensure insulation.
このように、酸化被膜あるいは電着塗装に依り均一な絶
縁性のある被膜層を形成することによって絶縁不良を未
然に防止し、高精度、高信頼のあるエンコーダーが提供
できるものである。In this way, by forming a uniform insulating film layer using an oxide film or electrodeposition coating, poor insulation can be prevented and a highly accurate and highly reliable encoder can be provided.
酸化被膜の代表的な形成方法は、陽極酸化法であり、硫
酸法、リン酸法、シュウ酸性等の一般に用いられる方法
が適用できる。例えば、電界浴の組成としては１〜２０
％の主成分の濃度とし、この液中で対極に対して陽極に
半導体レーザホルダーをおき、直流、または直交流電源
を用いて、印加・電圧・電流と時間に依り所定の被膜を
生成する。A typical method for forming an oxide film is an anodic oxidation method, and commonly used methods such as a sulfuric acid method, a phosphoric acid method, and an oxalic acid method can be applied. For example, the composition of the electric field bath is 1 to 20
% of the main component, place a semiconductor laser holder at the anode with respect to the counter electrode in this solution, and use a DC or DC power source to form a predetermined film depending on the applied voltage, current, and time.
厚さ通常は、印加電圧１０Ｖ〜３０ｖ１電流密度０．５
〜５Ａ／ ｃ ｒｄ、処理時間は１０〜９０分で５〜４
０μｍの好ましい厚さの酸化被膜が生成される。尚、浴
温としてはＯ〜３０ ’Ｃが好適である。、次いで、水
洗後、そのまま乾燥するか、あるいは封孔処理後乾燥す
る。Thickness: Normally, applied voltage is 10V to 30v, current density is 0.5
~5A/crd, processing time is 5-4 in 10-90 minutes
An oxide layer with a preferred thickness of 0 μm is produced. Note that the bath temperature is preferably 0 to 30'C. Then, after washing with water, it is dried as it is, or it is dried after a sealing treatment.
電着塗装法としては、アニオン系、又はカチオン系電着
塗装が適用できる。As the electrodeposition coating method, anionic or cationic electrodeposition coating can be applied.
本発明において好ましく採用される電着可能な樹脂とし
てその代表的なものを挙げればアニオン系では、アクリ
ルアルキッド樹脂系、アルキッド樹脂系、エポキシ樹脂
系、アクリル樹脂系、アクリル変性ポリエステル樹脂系
、メラミン樹脂系、アクリルメラミン樹脂系、ベンジブ
アミン樹脂系、アクリル尿素樹脂系、アクリルエポキシ
樹脂系、アクリルフェノール樹脂系等、またカチオン系
では、エポキシ樹脂系、アクリル樹脂系、ポリエステル
樹脂系、ブタジェンゴム系等で、一般的に用いられる樹
脂をベースとしたものである。Typical electrodepositable resins preferably employed in the present invention include anionic resins such as acrylic alkyd resins, alkyd resins, epoxy resins, acrylic resins, acrylic modified polyester resins, and melamine resins. acrylic melamine resins, benzibamine resins, acrylic urea resins, acrylic epoxy resins, acrylic phenol resins, etc.Cationic systems include epoxy resins, acrylic resins, polyester resins, butadiene rubbers, etc. It is based on a resin commonly used in
電着塗装法は半導体レーザホルダーの基材又は基材を陽
極酸化被膜を形成したものを前記の樹脂分１〜５０％に
稀釈し、電着塗装液として、この液中で対極に対してア
ニオン系では陽極、カチオン系では陰極におき、直流電
源を用いて印加電圧と時間により所定の塗膜を析出する
。In the electrodeposition coating method, the base material of the semiconductor laser holder or the base material on which the anodized film has been formed is diluted to the above-mentioned resin content of 1 to 50%, and an anion is applied to the counter electrode in this solution as an electrodeposition coating solution. A predetermined coating film is deposited by applying a voltage and time using a DC power source, using the anode in the case of a cationic system and the cathode in a cationic system.
通常は印加電圧５〜２００Ｖ、電流密度０．５〜３Ａ／
ｃｒｄ、処理時間は２〜１８０ｓｅｃで５〜４０μｍの
好ましい厚さの電着塗膜が得られる。尚、電着塗装液の
ｐＨは、アニオン系では８．０−１０．０、カチオン系
では４〜７で浴温は１５〜４０℃が適当である。Usually applied voltage is 5-200V, current density is 0.5-3A/
crd, the treatment time is 2 to 180 seconds, and an electrodeposited coating film with a preferable thickness of 5 to 40 μm can be obtained. The appropriate pH of the electrodeposition coating liquid is 8.0 to 10.0 for anionic coatings, and 4 to 7 for cationic coatings, and the bath temperature is 15 to 40°C.
次いで水洗後、約１００〜１８０℃で２０〜３０分程度
で焼付して完成する。その後、完成された半導体レーザ
ホルダーにレーザを取り付け、次いで、エンコーダ一本
体に固定ねじにより取り付ける。Then, after washing with water, it is baked at about 100 to 180°C for about 20 to 30 minutes to complete the process. Thereafter, the laser is attached to the completed semiconductor laser holder, and then attached to the encoder body using a fixing screw.
レーザホルダー基材用金属としては鉄、銅、亜鉛、ニッ
ケル、アルミニウム、チタン、タングステン、クロム等
の金属、あるいはこれらの中のものを含む合金など任意
の金属を用いることができる。As the metal for the laser holder base material, any metal such as iron, copper, zinc, nickel, aluminum, titanium, tungsten, chromium, or an alloy containing any of these metals can be used.
以下本発明を実施例に従って、より具体的に説明する。 The present invention will be described in more detail below with reference to Examples.
実施例１
レーザホルダー（材質アルミ材）を前処理後硫酸２０％
液を用いて、陽極酸化条件を浴温２５℃±１℃、２０Ｖ
、２人／Ｃイ、６０分にて３０μｍの被膜を得て水洗後
、アニオン系電着塗装液（ハニー化成社製、商品名ハニ
ーライトＡＬ８０ＯＮ、アクリル系）を用いて、電着塗
装条件を樹脂分２０％、浴温２０〜３０℃、２００Ｖ、
２分にて１５μｍの塗膜を析出し、水洗後、１８０℃３
０分間焼付けし完成した。Example 1 20% sulfuric acid after pretreatment of laser holder (aluminum material)
The anodic oxidation conditions were a bath temperature of 25°C ± 1°C and 20V.
, 2 people/C, 60 minutes to obtain a 30 μm coating, and after washing with water, use an anionic electrodeposition coating liquid (manufactured by Honey Kasei Co., Ltd., trade name: Honeylight AL80ON, acrylic) to adjust the electrodeposition coating conditions. Resin content 20%, bath temperature 20-30℃, 200V,
A coating film of 15 μm was deposited in 2 minutes, washed with water, and heated at 180°C3.
Baked for 0 minutes and completed.
その後、半導体レーザを取り付け、次いで固定ねじでエ
ンコーダ一本体に取り付は特性を確認したところ、２０
個全て、絶縁性は１０′６Ω／ ｃ ｒｄで良好であっ
た。After that, the semiconductor laser was attached, and then the fixing screw was used to attach it to the encoder body.
The insulation properties of all of them were good at 10'6 Ω/crd.
実施例２
レーザホルダーを前処理後、硫酸５％液を用いて陽極酸
化条件を浴温５℃±１℃、３０Ｖ、４人／ｃｒｄ、５０
分にて２０μｍ被膜を得て、水洗後、カキオン系電着塗
装液（神東塗料社製、商品名シントーケミトロン５ＴＲ
−Ｒ−５２００）を用いて、電着塗装条件を樹脂分１０
％、浴温２０〜３０℃、１００Ｖ、１０秒にて５μｍの
座繰を形成し、水洗後、１５０℃、３０分間焼付し完成
した。Example 2 After pretreatment of the laser holder, anodizing conditions were set using a 5% sulfuric acid solution: bath temperature 5°C ± 1°C, 30V, 4 people/crd, 50
A 20 μm film was obtained in minutes, and after washing with water, a cationic electrodeposition coating solution (manufactured by Shinto Toyo Co., Ltd., trade name: Shinto Chemitron 5TR) was applied.
-R-5200), the electrodeposition coating conditions were set to 10% by resin content.
%, a 5 μm counterbore was formed at a bath temperature of 20 to 30° C. and 100 V for 10 seconds, and after washing with water, it was baked at 150° C. for 30 minutes to complete.
一方、陽極酸化処理後のレーザホルダーを電着塗装せず
、乾燥し、完成した。その後、前記二種類のレーザホル
ダーに半導体レーザを取り付け、次いでエンコーダ一本
体に取り付け、特性を確認したところ、各２０個全て、
絶縁性はｌｏＩ′Ω／ｃｒｒｒで良であった。On the other hand, the laser holder after anodizing was dried and completed without electrodeposition coating. After that, semiconductor lasers were attached to the two types of laser holders, and then attached to the encoder body, and when the characteristics were confirmed, all 20 of each type were
The insulation was good at loI'Ω/crrr.
以上のように本発明は、従来技術に比して、絶縁不良の
発生がまったくなく、また高精度に維持した高い信頼を
有するエンコーダーを提供することができるものである
。As described above, the present invention can provide a highly reliable encoder that is free from insulation defects and maintains high precision compared to the prior art.
第１図は、基材上陽極酸化被膜を生成し、その上に電着
塗膜を形成した状態の本発明による半導体レーザホルダ
ーの部分断面図である。
第２図は基材上陽極酸化被膜を生成した状態の本発明に
よる半導体レーザホルダーの部分断面図である。
第３図は基材上に直接電着塗膜を形成した状態の本発明
による半導体レーザホルダーの部分断面図である。FIG. 1 is a partial sectional view of a semiconductor laser holder according to the present invention in which an anodic oxide film is formed on a base material and an electrodeposited film is formed thereon. FIG. 2 is a partial sectional view of the semiconductor laser holder according to the present invention with an anodic oxide film formed on the base material. FIG. 3 is a partial sectional view of a semiconductor laser holder according to the present invention in which an electrodeposited coating film is directly formed on a base material.
Claims (2)
成されている半導体レーザホルダーを有することを特徴
とする可干渉性光束を利用したエンコーダー。(1) An encoder using a coherent light beam characterized by having a semiconductor laser holder having an oxide film and/or an electrodeposited film formed on its surface.
許請求の範囲第１項記載の可干渉性光束を利用したエン
コーダー。(2) An encoder using a coherent light beam according to claim 1, wherein the transfer coating film is formed on the oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10701087A JPS63271118A (en) | 1987-04-28 | 1987-04-28 | Encoder for which coherence luminous flux is utilized |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10701087A JPS63271118A (en) | 1987-04-28 | 1987-04-28 | Encoder for which coherence luminous flux is utilized |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63271118A true JPS63271118A (en) | 1988-11-09 |
Family
ID=14448211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10701087A Pending JPS63271118A (en) | 1987-04-28 | 1987-04-28 | Encoder for which coherence luminous flux is utilized |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63271118A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015040840A (en) * | 2013-08-23 | 2015-03-02 | オムロン株式会社 | Douser for optical encoder, manufacturing method of the same, and optical encoder using the same |
-
1987
- 1987-04-28 JP JP10701087A patent/JPS63271118A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015040840A (en) * | 2013-08-23 | 2015-03-02 | オムロン株式会社 | Douser for optical encoder, manufacturing method of the same, and optical encoder using the same |
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