JPS6327063U - - Google Patents

Info

Publication number

JPS6327063U

JPS6327063U JP11980286U JP11980286U JPS6327063U JP S6327063 U JPS6327063 U JP S6327063U JP 11980286 U JP11980286 U JP 11980286U JP 11980286 U JP11980286 U JP 11980286U JP S6327063 U JPS6327063 U JP S6327063U

Authority

JP

Japan

Prior art keywords

reference potential

polycrystalline silicon

diode

generation circuit

semiconductor substrate

Prior art date

1986-08-06

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
• 239000004065 semiconductor Substances 0.000 claims description 3
• 239000000758 substrate Substances 0.000 claims description 3
• 238000010586 diagram Methods 0.000 description 4
• 230000004048 modification Effects 0.000 description 1
• 238000012986 modification Methods 0.000 description 1

Cited By (1)