JPS63268662A - Thermal head substrate - Google Patents
Thermal head substrateInfo
- Publication number
- JPS63268662A JPS63268662A JP62103991A JP10399187A JPS63268662A JP S63268662 A JPS63268662 A JP S63268662A JP 62103991 A JP62103991 A JP 62103991A JP 10399187 A JP10399187 A JP 10399187A JP S63268662 A JPS63268662 A JP S63268662A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thermal head
- heat
- heat generating
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000004642 Polyimide Substances 0.000 claims abstract description 4
- 229920001721 polyimide Polymers 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 3
- 239000010407 anodic oxide Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 12
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007743 anodising Methods 0.000 abstract 2
- 229910004479 Ta2N Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000005338 heat storage Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 VSMo Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、感熱記録装置に用いられるサーマルヘッド用
の基板に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a substrate for a thermal head used in a heat-sensitive recording device.
感熱記録方式を用いたプリンタは、その低価格、小型、
メンテナンスフリーといった長所を生かしＦＡＸを中心
に急成長を遂げている。なかでも、記録速度の向上に努
力が払われており特にサーマルヘッドの放熱性を良くす
る為、従来は、基板に熱伝導性の良好な焼結アルミナ基
板を用い、更らにその下にヒートシンク（ｈｅａｔ
５ｉｎｋ）として厚い金属基板を配している。Printers using thermal recording methods are low-cost, compact, and
The company has achieved rapid growth with a focus on fax machines, taking advantage of its maintenance-free advantages. Among these efforts, efforts have been made to improve the recording speed, and in order to improve the heat dissipation of thermal heads in particular, conventionally a sintered alumina substrate with good thermal conductivity was used as the substrate, and a heat sink was placed underneath. (heat
5 ink), a thick metal substrate is arranged.
しかしながら、上記構成においてもサーマルヘッドの放
熱性は充分でなく、記録速度に限界があった。一般に悪
態記録においては、第２図に示す如く、記録の為の発熱
時間１１％次の記録を行う前に、もとの温度へ降下する
に要する放熱時間ｔ！とからなり（ｔ＋ ＋ｔ、）をも
って、記録の一周期としている０発熱時間は記録に要す
る印加パワーを上げて短かくすることは可能であり、現
在でも０．５ ｍ５ｅｃ／ｄａｔ以下の時間で記録され
ている例もある。しかし、放熱はサーマルヘッドの構造
に係わるものであり、従来の焼結アルミナ基板の熱伝導
率により決まる限界があった。その為、この放熱時間を
短くして高速記録を行うと、基板温度が蓄熱により上昇
し、しいては発熱体温度もその分上昇して、記録濃度が
上がり記録の尾引きや細部のつぶれなどの問題を生じる
。この為、従来では、基板の温度を検出し、印加パワー
を制御する方式が一般に行われている。しかし、この種
の方法では一般に基板の裏面での温度を検出している為
、発熱体近傍に比し、時間的に遅れを生じている。その
分まで含めてシミニレ−シランによる補正を行うとすれ
ば、回路系が複雑になり、高価になる。However, even with the above configuration, the heat dissipation performance of the thermal head was insufficient, and there was a limit to the recording speed. In general, when recording swear words, as shown in Figure 2, the heat generation time for recording is 11%, and the heat dissipation time required to drop to the original temperature before the next recording is made is t! It is possible to shorten the zero heat generation time, which is defined as one cycle of recording by increasing the applied power required for recording, and even now it is possible to record in a time of less than 0.5 m5ec/dat. There are some examples where this has been done. However, heat radiation is related to the structure of the thermal head, and there is a limit determined by the thermal conductivity of the conventional sintered alumina substrate. Therefore, if you shorten this heat dissipation time and perform high-speed recording, the substrate temperature will rise due to heat accumulation, and the heating element temperature will also rise by that amount, increasing the recording density and causing problems such as trailing in the recording and loss of details. This causes problems. For this reason, in the past, a method has generally been used in which the temperature of the substrate is detected and the applied power is controlled. However, since this type of method generally detects the temperature on the back side of the substrate, there is a time delay compared to the temperature near the heating element. If the compensation is to be carried out using the simile silane to include this amount, the circuit system will become complicated and expensive.
〔問題点を解決する為の手段〕 −
上記問題点の解決の為に、本発明は、サーマルヘッド用
基板として従来の焼結アルミナ基板に替えて、表面を絶
縁被覆した金属基板としたものである。[Means for Solving the Problems] - In order to solve the above problems, the present invention replaces the conventional sintered alumina substrate with a metal substrate whose surface is coated with insulation as the substrate for the thermal head. be.
本発明に於いては、サーマルヘッド用基板として、絶縁
被覆を施した金属基板を使用するので、その熱伝導性が
良好で、本質的に基板による蓄熱効果が少い０例えば、
本実施例によるアルミニウム金属基板の場合は、その熱
伝導率は２．４ Ｊ／ｃｍ、ｓ。In the present invention, since a metal substrate with an insulating coating is used as the thermal head substrate, its thermal conductivity is good, and the heat storage effect by the substrate is essentially small.For example,
In the case of the aluminum metal substrate according to this example, its thermal conductivity is 2.4 J/cm, s.
１’あり、従来ノアルミナ基板０．０７ Ｊ／ｃｔｍ、
ｓ、にニ比して３０倍程大きい、従って、サーマルヘッ
ドの動作時、特に放熱時、基板を通しての放熱性が良好
で、ヒータ部位の温度の立下りも速くなる。1', conventional alumina substrate 0.07 J/ctm,
s is about 30 times larger than that of s, and therefore, when the thermal head is operating, especially when dissipating heat, the heat dissipation through the substrate is good and the temperature of the heater portion decreases quickly.
なお、本発明による金属基板は、その表面を絶縁被覆す
るが、その絶縁層は一般に１〜１００μｍ程度と薄くて
よいので上記放熱性にそれ程影響を与えるものではない
。The surface of the metal substrate according to the present invention is coated with an insulating layer, but since the insulating layer may be as thin as about 1 to 100 μm, it does not significantly affect the heat dissipation.
金属基板の材料としては、例えばＡＩ！、Ｃｕ。Examples of materials for the metal substrate include AI! , Cu.
Ａ ｕ ｓ Ａ ｇ ｓ Ｐ Ｌ、Ｂｅ％Ｍｇｘ ’ｒ
ｉ、、Ｚｒ、Ｎｂ、ＶＳＭｏ、Ｒｕ、Ｒｈ、Ｐｄ、Ｚｎ
などが使用される。A u s A g s P L, Be%Mgx 'r
i, , Zr, Nb, VSMo, Ru, Rh, Pd, Zn
etc. are used.
金属基板の上に形成される絶縁層は、発熱体の熱の影響
を受けるので、耐熱性のものでなければならず、■例え
ばＳｉＯ，，５ｉＯ１Ｓ ｔ ＯＸ ％ＡｅＢ Ｏｓ
、Ｔｉ Ｏｘ 、Ｔａｇ Ｏｓ ｓ窒化はう素（ＢＮ）
、窒化アルミニウム（ＡＩ！Ｎｌ炭化ケイ素（Ｓ ｉ
Ｃ） 、りん化はう素（Ｂ Ｐ） 、酸化ベリリウム（
Ｂｅｄ）などの無機材料、■例えば薄膜状ダイヤモンド
、耐熱性樹脂（例えばポリイミド）などが使用される。Since the insulating layer formed on the metal substrate is affected by the heat of the heating element, it must be heat resistant.
, Ti Ox , Tag Os s Boron nitride (BN)
, aluminum nitride (AI!Nl silicon carbide (S i
C), boron phosphide (BP), beryllium oxide (
(1) For example, thin film diamond, heat-resistant resin (for example, polyimide), etc. are used.
金属基板は、一般に約４００℃以上の温度に長時間さら
されることは好ましくないので、絶縁層の形成に当って
は、この点を避け、例えば■真空薄膜堆積技術例えば（
反応性）真空蒸着、（反応性）スパッタリング、（反応
性）イオンブレーティング、（プラズマ）ＣＶＤ９ど、
■陽極化成法、■塗布した後、常温又は約４００℃以下
での加熱乾燥又は硬化する方法などで形成することが好
ましい。In general, it is not preferable for metal substrates to be exposed to temperatures of about 400°C or higher for long periods of time, so when forming an insulating layer, avoid this point and use vacuum thin film deposition techniques such as (
(reactive) vacuum evaporation, (reactive) sputtering, (reactive) ion blasting, (plasma) CVD9, etc.
Preferably, the coating is formed by (2) an anodic chemical formation method, (2) a method of drying or curing by heating at room temperature or about 400° C. or less after coating.
第１図は本実施例の基板を用いたサーマルヘッドの断面
構造棟式図で、発熱体付近を示すものである。FIG. 1 is a cross-sectional structural diagram of a thermal head using the substrate of this embodiment, showing the vicinity of the heating element.
図中（１）は絶縁層（Ｉｂ）の形成されたアルミニウム
金属板（１ａ）よりなる基板であり、絶縁層（ｌｂ）は
硫酸浴中にて陽極化成により形成する。In the figure, (1) is a substrate made of an aluminum metal plate (1a) on which an insulating layer (Ib) is formed, and the insulating layer (lb) is formed by anodization in a sulfuric acid bath.
陽極化成の結果、絶縁性の良い厚さ２０〜３０μ−のＡ
ｊ！、０．層（１ｂ）が形成される。この後、９５℃の
熱湯中に約３０分浸漬して封孔処理し、本発明の目的と
するサーマルヘッド用基板が形成される。As a result of anodization, A with a thickness of 20 to 30μ- has good insulation properties.
j! ,0. Layer (1b) is formed. Thereafter, the substrate is immersed in hot water at 95° C. for about 30 minutes to seal the holes, thereby forming a substrate for a thermal head, which is the object of the present invention.
この後、通常のサーマルヘッド製造工程に従い、まず部
分蓄熱層（６）としてポリイミドを発熱部分のみに形成
し、しかる後、スパッタリングにて発熱抵抗体（３）と
してＴａ、Ｎを１０００人形成する。更らに通電用の一
対の電極（４ａ）、（４ｂ）としてＣｒ （１０００人
）／Ａｊ！（１μ−）の２層膜を真空蒸着法にて形成し
、その後、上記、発熱体も含めて、解像度９１ｉｎｅ／
ｍにパターニングする。パターニングも通常行われてい
るフォトリソ技術を利用し、エツチングはＴａｘＮをＣ
Ｆ、ガスによるプラズマエツチングで、またＣｒ／Ａ１
２層膜は、湿式エツチング法にて行う、この後、保護膜
（５）をスパッタリングにて形成し、サーマルヘッドを
完成する。Thereafter, according to the usual thermal head manufacturing process, polyimide is first formed as a partial heat storage layer (6) only on the heat generating part, and then 1000 Ta and N are formed as a heat generating resistor (3) by sputtering. Furthermore, as a pair of electrodes (4a) and (4b) for energization, Cr (1000 people)/Aj! A two-layer film of (1μ-) was formed by vacuum evaporation, and then the above-mentioned film, including the heating element, was coated with a resolution of 91ine/
Pattern into m. The patterning also uses the commonly used photolithography technology, and the etching uses TaxN
F, plasma etching with gas, and Cr/A1
The two-layer film is formed by wet etching, and then a protective film (5) is formed by sputtering to complete the thermal head.
本発明の効果をよりよく説明する為に、第３図に従来の
サーマルヘッドの例を示す０図中（１）は焼結アルミナ
基板、（２）は金属板よりなるヒートシンク、（６）は
ガラスグレーズよりなる部分蓄熱層である。尚、（３）
〜（５）は、第１図と同一である。この従来例では、印
字周期中、放熱時、発熱体及び部分グレーズ中の熱は焼
結アルミナ基板（１）を通して行われる０発熱体の温度
上昇は部分グレーズの蓄熱作用にて、効率良く行われる
が、発熱パルスが連続すると、グレーズ内の温度が次第
に上昇する。従って、グレーズ内に一定の温度勾配を維
持する為には、グレーズの下面、つまり焼結アルミナ基
板（１）面との界面を一定温度に保つべく、本来ならば
基板（１）は完全なるヒートシンクであることが望まし
い、しかしながら実際には、その熱伝導率は有限である
為、上記界面温度は次第に上昇する。In order to better explain the effects of the present invention, Fig. 3 shows an example of a conventional thermal head. In Fig. 3, (1) is a sintered alumina substrate, (2) is a heat sink made of a metal plate, and (6) is a This is a partial heat storage layer made of glass glaze. Furthermore, (3)
-(5) are the same as in FIG. In this conventional example, during the printing cycle, during heat dissipation, the heat in the heating element and partial glaze is carried out through the sintered alumina substrate (1).The temperature increase in the heating element is efficiently carried out by the heat storage effect of the partial glaze. However, as the heating pulses continue, the temperature within the glaze gradually increases. Therefore, in order to maintain a constant temperature gradient within the glaze, the lower surface of the glaze, that is, the interface with the sintered alumina substrate (1), must be kept at a constant temperature. However, in reality, since its thermal conductivity is finite, the above-mentioned interface temperature gradually increases.
従って、蓄熱層下は、特に放熱特性ができる限り良好な
程良く、本発明によれば、従来の焼結アルミナ基板に比
較して、その熱伝導率が３０倍高く効果が大きい。Therefore, the heat dissipation property under the heat storage layer is preferably as good as possible, and according to the present invention, the thermal conductivity is 30 times higher than that of the conventional sintered alumina substrate, which is highly effective.
又、焼結アルミナ基板は、サーマルよラド用としてその
表面粗度を小さく抑えねばならず、その為、高純度化又
は、表面加工など、コストの高いものになっているが、
本発明によれば、金属アルミニウムを素材としているの
で、安価であるという長所もある。In addition, the surface roughness of sintered alumina substrates must be kept to a low level for thermal and rad applications, which requires high purification or surface processing, which is expensive.
According to the present invention, since metal aluminum is used as the material, it also has the advantage of being inexpensive.
更らに、焼結アルミナ基板は、焼結後、歪みによるソリ
量が通常０．１〜０．１５閣程あり、プラテンとの一様
な接触に妨げとなる問題を生じているが本発明になる金
属基板においては、金属加工が充分高い精度で可能なこ
とから、上記ソリ量についても０．０５閣以下にできる
長所がある。Furthermore, after sintering, the sintered alumina substrate usually warps by about 0.1 to 0.15 degrees due to distortion, which poses a problem that prevents uniform contact with the platen. The metal substrate has the advantage that metal processing can be performed with sufficiently high accuracy, and the amount of warpage can be reduced to 0.05 degrees or less.
第１図は、本発明の実施例にかかる基板を用いたサーマ
ルヘッドの概略縦断面図である。
第２図は、発熱パルスの電圧と温度の関係を示す説明図
である。
第３図は、従来の基板を用いたサーマルヘッドの概略縦
断面図である。
〔主要部分の符号の説明〕
２・・・ヒートシンク
３・・・発熱体層
４ａ、４ｂ・・・電極
５・・・保護層
６・・・部分蒸着層FIG. 1 is a schematic vertical sectional view of a thermal head using a substrate according to an embodiment of the present invention. FIG. 2 is an explanatory diagram showing the relationship between the voltage and temperature of the heating pulse. FIG. 3 is a schematic longitudinal sectional view of a thermal head using a conventional substrate. [Explanation of symbols of main parts] 2... Heat sink 3... Heat generating layer 4a, 4b... Electrode 5... Protective layer 6... Partially vapor deposited layer
Claims (5)
特徴とするサーマルヘッド用基板。(1) A thermal head substrate comprising a metal substrate having an insulating layer on its surface.
徴とする特許請求の範囲第１項記載のサーマルヘッド用
基板。(2) The thermal head substrate according to claim 1, wherein the metal substrate is made of aluminum.
特徴とする特許請求の範囲第１項記載のサーマルヘッド
用基板。(3) The thermal head substrate according to claim 1, wherein the insulating layer is made of an anodic oxide film of the substrate.
する特許請求の範囲第１項記載のサーマルヘッド用基板
。(4) The thermal head substrate according to claim 1, wherein the insulating layer is made of polyimide.
を特徴とする特許請求の範囲第１項記載のサーマルヘッ
ド用基板。(5) The thermal head substrate according to claim 1, wherein the insulating layer is made of a material with high thermal conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62103991A JPS63268662A (en) | 1987-04-27 | 1987-04-27 | Thermal head substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62103991A JPS63268662A (en) | 1987-04-27 | 1987-04-27 | Thermal head substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63268662A true JPS63268662A (en) | 1988-11-07 |
Family
ID=14368767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62103991A Pending JPS63268662A (en) | 1987-04-27 | 1987-04-27 | Thermal head substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63268662A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104401135A (en) * | 2014-12-04 | 2015-03-11 | 山东华菱电子股份有限公司 | Thermal printing head |
-
1987
- 1987-04-27 JP JP62103991A patent/JPS63268662A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104401135A (en) * | 2014-12-04 | 2015-03-11 | 山东华菱电子股份有限公司 | Thermal printing head |
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