JPS63266729A - Cathode of dc-type plasma luminous element and its manufacture - Google Patents

Abstract

PURPOSE:To make a cathode of a plasma luminous element excellent in its sputtering-resisting performance by forming a non-electrolysis nickel alloy film as at least a surface layer of said cathode. CONSTITUTION:A conductive layer 21 is formed on an insulating substrate 11, and the whole exposed part of this conductive layer 21 is coated with a non-electrolysis nickel alloy film 25. An alloy of nickel-tungsten-phosphorus, an alloy of nickel-M-phosphorus, and an alloy of nickel-M-boron (where M is molybdenum, chromium copper, iron, or the like) are used as this non- electrolysis nickel alloy. Hence, sputteringresisting performance of a cathode is much improved compared with a material obtained from paste. Even if a voltage applied across the cathode and an anode is made high, no damage occurs on the cathode so that a plasma luminous element of high brightness can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) This invention relates to a structure of a cathode of a DC type plasma light emitting device,
The present invention relates to a method for manufacturing this cathode.

(Conventional technique m) A device in which various gases are sealed in a pressurized glass tube and a high voltage is applied between an anode and a cathode exposed in this gas space to discharge the gases and emit light. has been known for a long time.

Such devices are called plasma light emitting devices, and attempts have been made to apply them to display panels, optical heads, etc., and some of them have been put into practical use.

Plasma display panels (hereinafter sometimes abbreviated as PDP) are classified into AC type and DC type depending on the operating method.Although both have advantages and disadvantages, DC type Types are better.

Conventional DC-type FDPs include, for example, the literature (Oki Research and Development Competition [3] P, 3-P, 8 (July 1986)).
There are some things that have been disclosed.

FIG. 7 is a cross-sectional view schematically showing the structure of a conventional DC type PDP. With reference to this figure, the structure of a conventional FDP and the method of manufacturing a cathode included in the PDP will be briefly explained.

In FIG. 7, reference numeral 11 indicates one insulating substrate and the other insulating substrate. As the insulating substrate 11, for example, soda lime glass having a thickness of about 3 mm is used.

A cathode (cathode electrode) indicated by 13 is provided on one of the insulating substrates. This cathode 13 is usually in the form of a stripe, and in this case, a large number of stripes are formed side by side in a direction perpendicular to the plane of the paper.

Further, the formation of the cathode 13 has been carried out by thick film printing technology, by printing a nickel-based conductive paste on the insulating substrate 11 and firing it.

Further, an anode (anode electrode) indicated by 15 is provided on the other insulating substrate. The anode 15 is composed of a plurality of striped electrodes whose stripe direction is orthogonal to the cathode 13. For this anode 15, a transparent conductive film made of a mixture of tin oxide and isidium oxide is used.

Further, 17 indicates a partition wall, and this partition wall is provided for the purpose of partitioning the light emitting pixels formed in the intersection area of the cathode and the anode into each pixel, and for the purpose of creating an appropriate gap between the cathode 13 and the anode 15. It is usually formed by printing glass paste on one or the other insulating substrate using thick film printing technology and firing the printed glass paste.

Reference numeral 19 denotes a sealing material. This sealing material is for sealing the gas used for plasma emission in the gap between one and the other insulating substrates, and is usually made of lead glass or the like. After introducing gas into the gap, sealing can be achieved by melting the lead glass.

On the other hand, plasma optics used as optical heads for electrophotographic recording systems selectively emit light from a large number of light-emitting pixels, and the generated light is focused by a light transmitting part such as a SELFOC lens. Light is irradiated onto a photoreceptor facing an optical head to form an electrostatic latent image on the photoreceptor. Such a plasma optical head is disclosed, for example, in Japanese Patent Application Laid-Open No. 60-34876, but it has problems as described below and has not been put to practical use.

Plasma light-emitting devices are known for their ability to provide clear displays, and there are many requests for a device that takes advantage of this advantage. However, in order to put the plasma optical head into practical use, we also developed a PDP with higher image quality! In order to get
Increasing the pixel density and luminance of plasma light emitting devices are important issues.

(Problem to be Solved by the Invention) However, the cathode of a conventional plasma light emitting device is formed by printing nickel paste on an insulating substrate using thick film printing technology, so the distribution wjA density of the cathode is There was a problem in that it was dominated by the accuracy of membrane printing.

Specifically, when forming a cathode by thick film printing, the limit of the wiring density of the electrode that can stably form the cathode electrode width to a desired width is 3 to 4 wires/mm. It was impossible to form them at a higher density.

Further, in a plasma light emitting device, its cathode is sputtered by ions during plasma light emission. Plasma optical heads require much higher luminance than PDPs, and in order to obtain such high luminance, the voltage applied between the cathode and anode must be roughly increased. The energy for sputtering the cathode becomes considerably large. However, in conventional plasma light emitting devices, the cathode is composed of a nickel film obtained from paste, so this cathode is easily damaged by sputtering, which makes it difficult to achieve high brightness light emission. The problem was that it was getting in the way.

The reason why a cathode made of nickel paste is easily damaged is considered to be as follows. The nickel paste printed on the insulating substrate is then fired, but the firing temperature must be set at a temperature that does not deform the soda lime glass used as the insulating substrate. The temperature is usually below 600"C. However, such a temperature is low as a firing temperature for nickel paste, and therefore the nickel sintered body is considered to be brittle. It is conceivable to raise the firing temperature of the nickel paste to obtain a high-quality nickel sintered body, but raising the firing temperature greatly increases the This is not preferable because it increases industrial disadvantages such as a longer cooling time.

In addition, in the plasma optical head disclosed in Japanese Patent Application Laid-Open No. 60-34876, in order to compensate for the low luminance of the plasma light emitting elements, the plasma light emitting elements are arranged in the rotational direction of the photoreceptor (in a configuration in which the plasma light emitting elements are arranged in parallel rows). Using these plurality of light emitting elements, the same part of the photoreceptor is irradiated with light multiple times, and an electrostatic latent image is formed on the photoreceptor using the total amount of light.However, By providing multiple light emitting elements, the optical head becomes larger, and the
Since the drive system becomes complicated, it is hard to say that such a method is an advantageous method.

This application was filed in view of the above-mentioned points, and therefore, the first object of this application is to provide a cathode provided in a plasma light emitting device with excellent sputtering resistance.

Further, the second to fourth objects of the present invention are to provide a method for manufacturing a cathode that has excellent sputtering resistance and can be formed at high density.

(Means for Solving the Problems) In order to achieve this object, according to the first invention of this application, at least the surface layer of the cathode of the plasma light emitting device is comprised of an electroless nickel alloy film. shall be.

Further, in carrying out the first invention, it is preferable to use a nickel-tungsten-phosphorus alloy as the electroless two-layer alloy.

In general, in carrying out the first invention, the above-mentioned electroless nickel alloy is replaced with a nickel-M-phosphorus alloy or a nickel-M
- A boron alloy (where M is one residual pressure selected from molybdenum, chromium, copper, iron, zinc, and silicon) is preferable.

Further, the method for manufacturing a cathode of a DC plasma light emitting device according to the second to fourth inventions of this application includes the following steps to form the cathode so that the surface layer is composed of an electroless nickel alloy film. do something

The manufacturing method of the second invention includes the steps of forming a conductor layer on an insulating substrate, patterning this conductor layer by photoetching, and electrolessly plating an electroless nickel alloy on the remaining conductor layer. It is characterized by containing.

The manufacturing method of the third invention includes a step of forming a conductor layer on an insulating substrate, a step of electroless plating an electroless nickel alloy on the conductor layer, and a step of removing the electroless nickel alloy and the conductor layer by photoetching. The method is characterized in that it includes a step of patterning at the same time.

Furthermore, the manufacturing method of the fourth invention provides an electroless nickel alloy layer IF of a predetermined shape on an insulating substrate! , characterized by direct formation.

In implementing the fourth invention, the formation of the electroless nickel layer in the predetermined shape described above may be performed by electroless plating of an electroless nickel alloy on an insulating substrate and then patterning this electroless nickel alloy by photoetching, or by patterning the electroless nickel alloy by photoetching. Alternatively, it is preferable to form a resist pattern on the insulating substrate by photoetching and then electrolessly plate the exposed portion of the above-mentioned fastening substrate with an electroless nickel alloy.

(Function) According to the cathode of the DC type plasma light emitting device of the first invention of this application, the surface layer of the cathode exposed to the gas space for plasma discharge is made of an electroless nickel alloy. It is thought that the electroless Ni-Nkel alloy film becomes a metal film having fine crystal grains when deposited. Such a film exhibits sufficient resistance to sputtering energy even if a voltage higher than that in the past is applied between the anode and cathode and the sputtering energy increases accordingly.

For example, when the electroless nickel alloy constituting the cathode was composed of a nickel-Kungesten-phosphorus alloy, an improvement in spatter resistance was observed, as will be described later. The reason why spatter resistance is improved by using such an alloy is not clear, but phosphorus has the effect of making the nickel crystal grains finer, and tungsten has the effect of making the nickel crystal grains coarser when heated. It seems to have a preventive effect. The fine crystal grains have many lattice defects, which are thought to contribute to improved spatter resistance, which is thought to improve the spatter resistance of this alloy film. In general, since tungsten itself has superior spatter resistance than nickel, it is thought that simply including tungsten in nickel improves the spatter resistance compared to a single nickel film.

Further, according to the manufacturing method of this application, the cathode is patterned by photo etching. Therefore, compared to the conventional method of forming a cathode by thick film printing, the method of the present invention enables the formation of a cathode with high accuracy and high degree of sharpness.

(Example) Hereinafter, examples of the cathode of the plasma light emitting device of the present invention and the manufacturing method thereof will be described with reference to the drawings. In each figure used in the explanation, the same constituent components (the same components are indicated by the same reference numerals). Although the description will be made based on opening conditions and other conditions, it should be understood that the present invention is not limited to these materials, numerical examples, and other conditions.

First, the cathode of the present invention, which is suitable as a cathode for a DC type plasma light emitting device, will be explained. The cathode of the present invention is characterized in that at least its surface layer is composed of an electroless nickel alloy film so as to prevent the cathode from being sputtered during plasma discharge. Figure 1 (A)-(C)
1 is a cross-sectional view showing an embodiment of the cathode of the present invention, in which a large number of cathodes of the present invention are formed on an insulating substrate, and the portions considered necessary for explaining the present invention are shown by focusing on two of these cathodes. This is only a schematic representation. Note that these figures correspond to the view of the DC type plasma light emitting device shown in FIG. 7 as viewed from the direction indicated by P in the same figure.

Embodiment 1 FIG. 1A is a diagram showing a cathode according to Embodiment 1 of the present invention. The cathode 31 in this case has a conductor layer 21 provided on an insulating substrate 11, and roughly all exposed parts of the conductor layer 21 are coated with an electroless nickel alloy film 25 as a surface layer.

<Second Embodiment> FIG. 1(B) is a diagram showing a third embodiment of the cathode of the present invention. The cathode 31 in this case δ has a conductor layer 21 provided on the insulating substrate 11, and roughly the main exposed surface of the conductor layer 21,
That is, the surface opposite to the surface in contact with the substrate 11 is coated with an electroless nickel alloy film 25 as a surface layer.

Third Embodiment FIG. 1(C) is a diagram showing a third embodiment of the cathode of the present invention. The cathode 31 in this case includes an electroless nickel alloy film 25 formed on an insulating substrate 11 and having a shape corresponding to the shape of the cathode.

In this case, the entire cathode 31 is covered with the electroless nickel alloy film s2.
Therefore, the cathode itself corresponds to the surface layer.

As the insulating substrate 11 used in each of the embodiments described above, a conventionally known suitable material such as soda lime glass can be used.

Furthermore, the conductor layer described in the above-mentioned first and second embodiments can be formed on an insulating substrate with good adhesion, and can also serve as a base for an electroless nickel alloy film. You can use anything you have. Examples of such a conductive layer include an IT○ film, a chromium film, a nickel film, an aluminum film, etc.
In the case of a chromium film or an aluminum film, in order to facilitate electroless plating, it is preferable to roughly coat a thin film of nickel or copper on these films.

Further, the electroless nickel alloy constituting the surface layer of each of the above-mentioned examples may be nickel-phosphorus, nickel-boron, nickel-tungsten-phosphorus, nickel-molybdenum-phosphorus,
Nickel-cobalt-phosphorus, nickel-copper-phosphorus, nickel-iron-phosphorus, nickel-zinc-phosphorous, nickel-silicon-phosphorus, nickel-
Tungsten-boron, nickel-molybdenum-boron, nickel-chromium-boron, nickel-cobalt-boron, nickel-copper-boron, nickel-iron-boron,
It can be constructed using various materials such as nickel-zinc-boron, nickel-silicon-boron, etc.

2j Glue Reporting Method Next, a method for forming the above-mentioned cathode for a DC type plasma light emitting device, in which at least the surface layer is composed of an electroless nickel alloy film, will be described.

Description of the manufacturing method of the second invention First, the manufacturing method of the second invention of this application will be explained.

This manufacturing method is suitable for obtaining the cathode of the above-mentioned first embodiment. Figures 2 (A) to (D) are manufacturing process diagrams for explaining this manufacturing method, and the structure of the cathode in the main steps according to the manufacturing progress is shown in cross-sectional views corresponding to Figure 1. be.

First, a conductor layer 21 is formed on the entire surface of the insulating substrate 11 using a suitable method such as vapor deposition or sputtering (see 9 in FIG. 2(A)). material can be used.

Furthermore, the thinner the conductor layer 21 is, the higher the accuracy can be obtained in photoetching performed in a subsequent process.

If this layer thickness is set to, for example, about 1000 to 3000 A, the dimensional accuracy of the cathode required for a plasma light emitting device can be obtained.

Next, photoresist f! is applied all over this conductive layer. Apply,
Next, this resist is selectively exposed to light through a photomask, and then developed to form a resist pattern 23 related to the shape of the cathode on the conductive layer (FIG. 2(B)' ).

Next, after removing the exposed portion of the conductive layer 21 from the resist pattern 23 by a suitable etching method, the resist pattern 23 is removed (see FIG. 2(C)), and FIGS. 2(8) and (C). IF! , the conductive layer 21 is patterned.

Further, by forming the cathode using such a method, the cathode can be formed with high precision, so that the cathode can be mounted in high density.

By the way, a chromium film or a di-Sikel film, which can be used as the conductive layer 21 and is formed by vapor deposition or the like, has spatter resistance that is several orders of magnitude better than a film obtained from a nickel paste. However, this does not mean that a cathode with excellent spatter resistance has been provided.In other words, if a chromium film, nickel film, etc. is formed on an insulating substrate by vapor deposition, the formed film will be highly stressed and therefore However, with this method, it is not possible to increase the film thickness. Even if the film has excellent spatter resistance, if the film is thin, it cannot be used for a long time even if it is incorporated into an FDP or the like.

Taking this point into consideration, the inventor of this application has developed a film that has excellent spatter resistance and that has low stress.
! i! As a result of our investigation, we found that an electroless nickel alloy film is suitable for such a film.

For this reason, in the cathode manufacturing method of the second invention of this application, the surface of the patterned conductive layer 21 shown in FIG. 2(C) is further coated with electroless nickel alloy 25 to form a cathode. (Fig. 2 CD)").

Incidentally, electroless plating of the electroless nickel alloy onto the patterned conductive layer 21 can be performed by a conventionally known method. Preferably, the pretreatment is performed by immersing the substrate in a solution containing palladium chloride, and then immersing it in a solution containing palladium chloride. In the case of this example, first, corresponding electroless 2.y-Kel alloys were formed using plating baths capable of forming nickel-phosphorus and nickel-boron alloys, respectively. Both nickel-phosphorus and nickel-boron alloy films were found to have superior spatter resistance during plasma emission compared to conventional films made from nickel paste. In addition, when we examined electroless nickel alloys that had particularly excellent spatter resistance, it became clear that the ternary alloy nickel-tungsten-phosphorus electroless plating film exhibited excellent spatter resistance. Became. The nickel-tungsten-phosphorus film in this example was formed using a plating solution having the composition shown in Table 1. Further, the pH of this plating solution was 9.0, and the plating solution temperature during plating was 90°C.

Table 1 The nickel-tungsten-phosphorus alloy film deposited on the conductive layer 21 using the plating solution shown in Table 1 contains 3 to 15% by weight of tungsten and 3 to 10% by weight of phosphorus. I found out that it is.

Experimental Results> When a plasma optical head having a structure including a cathode as shown in Table 2 was manufactured using a manufacturing method including the above-mentioned cathode formation method, this optical head was found to be applicable to electrophotographic recording methods. Ta. However, this optical head was a practical one capable of forming an electrostatic latent image on the photoreceptor even when the light emitting time of one pixel (dot) was 100 us.

Table 2 <Description of the manufacturing method of the third invention> Next, the manufacturing method of the third invention of this application will be explained with reference to the manufacturing process diagrams shown in FIGS. 3(A) to (D). Note that this manufacturing method is suitable for obtaining the cathode of the second embodiment described above.

In this manufacturing method, first, the conductor layer 21 is formed on the entire surface of the insulating substrate 11 using a suitable method such as vapor deposition or sputtering (see 9 in FIG. 3(A)). Electroless nickel alloy 25 as a surface layer is electrolessly plated on the entire surface of this conductor layer 21 in the same manner as in the manufacturing method of the second invention (see 9 in FIG. 3(B)).

Next, a photoresist Ti is applied over the entire surface of the electroless nickel alloy 25, and then this resist is selectively exposed to light through a photomask, and then developed to form a cathode shape on the alloy 25. A resist pattern 23 related to this is formed (FIG. 3(C)).

Next, the portion of the electroless Ni-Nkel alloy film 25 exposed from the resist pattern 23 and the conductive layer 2 below this alloy portion are
After the resist pattern 23 is removed by a suitable etching method, a cathode 31 according to the present invention is obtained (see FIG. 3(D)).

Description of the manufacturing method of the fourth invention> Next, FIGS. 4(A) to (C) and FIGS. 5(A) to (C)
The fourth invention of this application will be explained with reference to. still,
This manufacturing method is suitable for obtaining the cathode of the third embodiment described above.

First, an electroless nickel alloy 25 is electrolessly plated on the entire surface of the insulating substrate 11 (see 9 in FIG. 4(A)).

Next, this electroless nickel alloy? A photoresist is applied to the entire surface of the alloy 25, and then this resist is selectively exposed to light through a photomask, and then developed to form a resist pattern 23 related to the cathode shape on the alloy 25. (Figure 4 (C)).

Next, the resist pattern 2 of the electroless nickel alloy film 25 is
After removing the exposed portion of resist pattern 3 by a suitable etching method, the resist pattern 23 is removed to obtain a cathode according to the present invention (see FIG. 4(C)).

Alternatively, first, a resist is applied to the entire surface of the insulating substrate 11,
Next, this resist is selectively exposed to light through a photomask, and then developed to form an insulating substrate.
Resist pattern 23 that exposes the area where cathode 1 is to be formed
a% is formed (FIG. 5(A)), and then the insulating substrate 11 is formed.
An electroless nickel alloy 25 as a surface layer is electrolessly plated on a partial region exposed from the resist pattern 23a in the same manner as in the second invention (see Figure 5(B) 9).

Next, the resist pattern 23a is removed by a suitable method to obtain a cathode 31 according to the present invention (FIG. 5(C)).
reference)).

Incidentally, when plasma optical heads including cathodes as shown in Table 2 were manufactured using the manufacturing methods of the third and fourth inventions, each optical head was the same as the optical head obtained by the method of the second invention. It showed unique characteristics.

In addition, PDPs containing cathodes manufactured by applying the manufacturing methods of the second, third, and fourth inventions were each manufactured. FIG.
FIG. 2 is a perspective view mainly showing a part of the cathode of this FDP and the substrate on the side having the cathode. In Figure 6, 11 indicates soda lime glass with a thickness of 3 mm;
1 indicates a cathode formed by the cathode manufacturing method of the present invention, and 1
7 indicates a partition made of glass paste; in this case,
The formation density of the cathode is 3 lines/mm, but according to the manufacturing method of the present invention, both the electrode width and the electrode pitch can be formed with higher accuracy than the conventional cathode formed by printing nickel paste. done.

The following is an explanation with specific numerical values. If you try to form a cathode with an electrode width of 150 um by thick film printing, the width will vary in the range of 120 to 180 um, but if you form a cathode with the same width using the manufacturing method of this invention, the width will vary between 145 and 180 um.
It was possible to form the film in a range of 55 μm.

! In the above embodiments, the electroless nickel alloy is a nickel-tungsten-phosphorus alloy, and this alloy is formed in a plating bath as shown in Table 1. However, even if at least the surface layer of the cathode is made of another ternary electroless nickel alloy as described above, the same improvement in spatter resistance as in the example can be expected.

When the cathode is composed of various other electroless nickel alloys, examples of plating baths for obtaining these alloys include the following.

(2) Examples of plating baths for electroless nickel-molybde sealin alloys are shown in Table 3.

Table 3 - Table 4 shows examples of plating baths for electroless nickel-molybdenum-boron alloys.

Table 4 - Table 5 shows examples of plating baths for electroless nickel-copper-phosphorus alloys.

Table 5 p)-1 is 10. Bath temperature 80℃.

(2) Examples of plating baths for electroless nickel-cobalt-phosphorus alloys are shown in Table 6.

Table 6■...Top 7 for electroless nickel-iron-boron alloy
Table (Effects of the Invention) As is clear from the above explanation, according to the cathode of the DC plasma light emitting device of the first invention of this application, at least the surface layer of the cathode is composed of an electroless nickel alloy film. As a result, the spatter resistance of the cathode is significantly improved compared to that of conventional films obtained from pastes. Therefore, even if the voltage applied between the cathode and the anode is made higher than before, the risk of damage to the cathode is reduced, and a plasma light emitting device with higher brightness than before can be obtained.

Further, according to the method for manufacturing a DC plasma light emitting device according to the second to fourth inventions of this application, the width and pitch dimensions of the cathode can be made more precise than those of the conventional method in which the width and pitch dimensions of the cathode are formed by thick film printing. I can do it. Therefore, the pixel density of the plasma light emitting device can be made higher than that of the conventional device. Moreover, since at least the surface layer of the cathode can be easily made of an electroless nickel alloy film, it is possible to obtain a plasma light emitting device with higher pixel density and higher brightness than before.

Therefore, according to the cathode for a DC type plasma light emitting device and the method for manufacturing the same of the present invention, it becomes possible to develop an optical head for a plasma light emitting device, for example, which has been difficult to use in the past.

[Brief explanation of drawings]

FIGS. 1(A) to (C) are cross-sectional views schematically showing the structure of an embodiment of the cathode of the DC type plasma light emitting device of the first invention of this application, and FIGS. 2(A) to (D) are , manufacturing process diagrams for explaining the cathode manufacturing method of the second invention of this application, FIGS. 3(A) to (D
) are manufacturing process diagrams for explaining the cathode manufacturing method of the third invention of this application, FIGS. 4(A) to (C) and FIG. 5(A)
~(C) are manufacturing process diagrams showing examples of the cathode manufacturing method of the fourth invention of this application, and FIG. 6 is for explaining each manufacturing method of this invention,
FIG. 7, which is a perspective view mainly showing the cathode of the PDP, is a diagram used to explain the conventional art and the present invention, and is a cross-sectional view schematically showing the structure of a DC type plasma light emitting device. 11... Insulating substrate, 31... Cathode 21...
- Conductive layer 23.23a...Resist pattern 25...Electroless nickel alloy film (surface layer). Patent applicant Oki Electric Industry Co., Ltd. + 1...
Insulating substrate 31 - Cathode 21 Conductive layer 25 Electroless nickel alloy film (surface layer) Cross-sectional view showing the cathode of this invention 23a...Resist pattern Figure 5 shows another example of the manufacturing method of the fourth invention Resist pattern Figure 5 shows the manufacturing method of the fourth invention

Claims (8)

[Claims] (1) A cathode for a direct current plasma light emitting device, characterized in that at least a surface layer of the cathode of the direct current plasma light emitting device is composed of an electroless nickel alloy film. (2) The cathode of a DC plasma light emitting device according to claim 1, wherein the electroless nickel alloy is a nickel-tungsten-phosphorus alloy. (3) The electroless nickel alloy is a nickel-M-phosphorus alloy or a nickel-M-boron alloy (where M is one metal selected from molybdenum, chromium, copper, iron, zinc, and silicon.) A cathode of a DC type plasma light emitting device according to claim 1, characterized in that: (4) In forming a cathode for a DC plasma light-emitting device, in which at least the surface layer is composed of an electroless nickel alloy film, there are the following steps: forming a conductor layer on an insulating substrate, and photo-etching the cathode. A method for producing a cathode for a DC plasma light emitting device, comprising the steps of patterning a conductor layer and electrolessly plating an electroless nickel alloy on the remaining conductor layer. (5) In forming a cathode for a DC plasma light emitting device, in which at least the surface layer is composed of an electroless nickel alloy film, a step of forming a conductor layer on an insulating substrate; and a step on the conductor layer. A method for producing a cathode for a DC plasma light emitting device, comprising the steps of electroless plating an electroless nickel alloy and patterning both the electroless nickel alloy and the conductor layer by photoetching. (6) When forming a cathode for a DC plasma light emitting device, in which at least the surface layer is composed of an electroless nickel alloy film, an electroless nickel alloy layer of a predetermined shape is directly formed on an insulating substrate. A method for manufacturing a cathode for a DC plasma light emitting device, characterized in that: (7) Formation of the electroless nickel alloy layer in the predetermined shape includes:
Manufacture of a cathode for a DC plasma light emitting device according to claim 6, which is carried out by electrolessly plating an electroless nickel alloy on an insulating substrate and then patterning the electroless nickel alloy by photo-etching. Method. (8) Formation of the electroless nickel alloy layer in the predetermined shape includes:
The direct current type plasma light emitting device according to claim 6, characterized in that a resist pattern is formed on an insulating substrate by photo-etching, and then electroless nickel alloy is electrolessly plated on the exposed portion of the insulating substrate. A method of manufacturing a cathode.