JPS63266328A - Force detector on two-dimensional plane - Google Patents
Force detector on two-dimensional planeInfo
- Publication number
- JPS63266328A JPS63266328A JP10127187A JP10127187A JPS63266328A JP S63266328 A JPS63266328 A JP S63266328A JP 10127187 A JP10127187 A JP 10127187A JP 10127187 A JP10127187 A JP 10127187A JP S63266328 A JPS63266328 A JP S63266328A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- detection
- dimensional plane
- force
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は二次元平面上の力検出装置、特に二次元平面上
の荷重分布を測定するための二次元平面上の力検出装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a force detection device on a two-dimensional plane, and particularly to a force detection device on a two-dimensional plane for measuring load distribution on a two-dimensional plane.
二次元平面上の荷重分布を測定するためには、測定面の
微小部分に作用する力を各微小部分ごとに検出する必要
がある。従来の二次元平面上の力検出装置は、測定面に
ピエゾ素子などの力検出素子を二次元的に配列し、各力
検出素子の出力に基づいて二次元的荷重分布の測定を行
っている。In order to measure the load distribution on a two-dimensional plane, it is necessary to detect the force acting on each minute portion of the measurement surface. Conventional force detection devices on a two-dimensional plane arrange force detection elements such as piezo elements two-dimensionally on the measurement surface, and measure the two-dimensional load distribution based on the output of each force detection element. .
しかしながら、従来の二次元平面上の力検出装置には、
構造が複雑になり量産に適さないという問題点がある。However, conventional force detection devices on a two-dimensional plane have
There is a problem that the structure is complicated and it is not suitable for mass production.
たとえば、検出面の分解能を縦横ともに１００とした場
合、合計１万個の力検出素子を二次元的に配列しなけれ
ばならず、この配列および配線を考慮すると非常に複雑
な構造になってしまう。For example, if the resolution of the detection surface is 100 in both the vertical and horizontal directions, a total of 10,000 force detection elements must be arranged two-dimensionally, and this arrangement and wiring will result in a very complicated structure. .
そこで本発明は、構造が単純で量産に適した二次元平面
上の力検出装置を提供することを目的とする。Therefore, an object of the present invention is to provide a two-dimensional plane force detection device that has a simple structure and is suitable for mass production.
本発明は、検出面となる二次元平面上に広がった絶縁基
板上の第１の層上に、第１の方向を向いた多数の検出用
抵抗素子からなる第１の抵抗素子群を形成し、第１の層
とは異なる第２の層上に、第１の方向とは異なる第２の
方向を向いた多数の検出用抵抗素子からなる第２の抵抗
素子群を形成して二次元平面上の力検出装置を構成し、
各抵抗素子は、機械的変形によって電気抵抗が変化する
性質をもつものとし、
第１の抵抗素子群の電気抵抗の変化と、第２の抵抗素子
群の電気抵抗の変化とを検出し、これらの検出結果に基
づいて検出面上に作用する力の位置および大きさを検出
できるようにしたものである。The present invention forms a first resistance element group consisting of a large number of detection resistance elements facing in a first direction on a first layer on an insulating substrate spread over a two-dimensional plane serving as a detection surface. , a second resistance element group consisting of a large number of detection resistance elements facing in a second direction different from the first direction is formed on a second layer different from the first layer to form a two-dimensional plane. Configure the force detection device on
Each resistance element has the property that its electrical resistance changes due to mechanical deformation, and changes in electrical resistance of the first resistance element group and changes in electrical resistance of the second resistance element group are detected. The position and magnitude of the force acting on the detection surface can be detected based on the detection results.
本発明に係る二次元平面上の力検出装置によれば、第１
の抵抗素子群の検出結果と第２の抵抗素子群の検出結果
との組合わせによって、検出面上での力の作用している
位置およびその大きさを特定することができる。各抵抗
素子群は、機械的変形によって電気抵抗が変化する性質
をもつため、検出面上での力の作用は電気信号として取
出される。第１の抵抗素子群と第２の抵抗素子群とは、
異なる層に形成されているため、互いに干渉しあうこと
なく独立した検出ができる。各抵抗素子は絶縁基板内に
形成されるため、量産に適した単純な構造になる。According to the force detection device on a two-dimensional plane according to the present invention, the first
By combining the detection results of the second resistance element group and the detection results of the second resistance element group, it is possible to specify the position where the force is acting on the detection surface and its magnitude. Since each resistance element group has the property that its electrical resistance changes due to mechanical deformation, the action of force on the detection surface is extracted as an electrical signal. The first resistance element group and the second resistance element group are
Since they are formed in different layers, they can be detected independently without interfering with each other. Since each resistive element is formed within an insulating substrate, the structure is simple and suitable for mass production.
以下本発明を図示する実施例に基づいて説明する。 The present invention will be described below based on illustrated embodiments.
検出部の構成
第１図は本発明の一実施例に係る二次元平面上の力検出
装置の検出部の構成図である。この装置は、図のＸ方向
に２つのブリッジＸｉ、Ｘ２を、図のＹ方向に２つのブ
リッジＹｌ、Ｙ２を備えている。ここでは説明の便宜上
Ｘ、 Ｙの各方向に２つのブリッジのみを有する装置を
示したが、実際にはそれぞれの方向に多数のブリッジが
配列されている。このブリッジの配列数がその方向の分
解能に相当することになる。Configuration of Detection Section FIG. 1 is a configuration diagram of a detection section of a force detection device on a two-dimensional plane according to an embodiment of the present invention. This device includes two bridges Xi and X2 in the X direction of the figure, and two bridges Yl and Y2 in the Y direction of the figure. For convenience of explanation, a device having only two bridges in each of the X and Y directions is shown here, but in reality, a large number of bridges are arranged in each direction. The number of bridges arranged corresponds to the resolution in that direction.
Ｘ方向に配列されたブリッジＸｉ、Ｘ２が第１の抵抗素
子群を構成し、Ｙ方向に配列されたブリッジＹｌ、Ｙ２
が第２の抵抗素子群を構成する。Bridges Xi and X2 arranged in the X direction constitute a first resistance element group, and bridges Yl and Y2 arranged in the Y direction constitute a first resistance element group.
constitutes the second resistance element group.
第１の抵抗素子群は第２の抵抗素子群の上層に位置する
ため、両者は互いに干渉しあうことなしに独立した測定
を行うことができる。Since the first resistance element group is located above the second resistance element group, both can perform independent measurements without interfering with each other.
本装置の各ブリッジは、それぞれ４つの抵抗素子からな
る。たとえば、第１の抵抗素子群に属するブリッジＸ１
は図に示すように抵抗素子Ｒ１〜Ｒ４の４つの抵抗素子
からなる。このうち、Ｙ方向を向いたＲ２．Ｒ４が検出
用抵抗素子となり、Ｘ方向を向いたＲ１．Ｒ３が連結用
抵抗素子となる。逆に、第２の抵抗素子群に属するブリ
ッジＹ１は図に示すように抵抗素子Ｒ５〜Ｒ８の４つの
抵抗素子からなり、このうちＸ方向を向いたＲ６゜Ｒ８
が検出用抵抗素子となり、Ｙ方向を向いたＲ５、Ｒ７が
連結用抵抗素子となる。前述のように、実際の装置では
多数のブリッジがＸ方向およびＹ方向に配列されており
、検出用抵抗素子はこの多数のブリッジすべてをまたぐ
ように形成される。Each bridge of the device consists of four resistive elements. For example, the bridge X1 belonging to the first resistance element group
consists of four resistance elements R1 to R4 as shown in the figure. Of these, R2 facing the Y direction. R4 serves as a detection resistance element, and R1. R3 becomes a connecting resistance element. Conversely, the bridge Y1 belonging to the second resistance element group consists of four resistance elements R5 to R8 as shown in the figure, of which R6°R8 facing the X direction
serves as a detection resistance element, and R5 and R7 facing the Y direction serve as connection resistance elements. As described above, in an actual device, a large number of bridges are arranged in the X direction and the Y direction, and the detection resistive element is formed so as to straddle all of the large number of bridges.
力の検出面はＸＹ平面となるが、この検出面上に検出用
抵抗素子が縦横に格子のように配されることになる。The force detection surface is the XY plane, and on this detection surface, detection resistive elements are arranged vertically and horizontally like a lattice.
２つの連結用抵抗素子によって、２つの検出用抵抗素子
の端部が連結され、ブリッジが構成される。第１図では
この連結部をハツチングで示す。The ends of the two detection resistance elements are connected by the two connection resistance elements to form a bridge. In FIG. 1, this connecting portion is indicated by hatching.
連結用抵抗素子は隣接する検出用抵抗素子間を連結する
機能を有すればよいので、検出用抵抗素子に比べて長さ
は非常に短くなる。両者の長さ比は、配列するブリッジ
数が増えるほど大きくなる。Since the connecting resistive element only needs to have a function of connecting adjacent detecting resistive elements, its length is much shorter than that of the detecting resistive element. The length ratio between the two becomes larger as the number of arranged bridges increases.
検出部の製造方法
上述の各ブリッジは、ポリイミドフィルム等の絶縁基板
上に形成され、しかも各ブリッジを構成する抵抗素子は
、機械的変形によって電気抵抗が変化する性質をもつ。Method for Manufacturing Detection Unit Each of the bridges described above is formed on an insulating substrate such as a polyimide film, and the resistance elements constituting each bridge have a property that the electrical resistance changes due to mechanical deformation.
第２図に絶縁基板上の具体的な構成図を示す。この第２
図は第１図に示す検出部を切断線Ａ・−Ａで切った断面
図に相当する。FIG. 2 shows a specific configuration diagram on an insulating substrate. This second
The figure corresponds to a cross-sectional view of the detection section shown in FIG. 1 taken along cutting line A.-A.
以下、この検出部の製造方法の一例を示す。まず、ポリ
イミドなどの絶縁基板１上に、プラズマＣｖＤあるいは
光ＣＶＤ法によってシリコンを堆積し、ピエゾ抵抗効果
を有するシリコン薄膜（たとえば、マイクロクリスタル
シリコン、ポリシリコンなど）を形成する。そしてこの
シリコン薄膜をパターニングしブリッジ回路を形成する
。第１図の装置では、下層にあるブリッジＹｌ、Ｙ２が
形成されることになる。第２図の断面図では、ブリッジ
Ｙ１の構成要素である抵抗索子Ｒ８の断面が示されてい
る。An example of a method for manufacturing this detection section will be shown below. First, silicon is deposited on an insulating substrate 1 made of polyimide or the like by plasma CVD or photoCVD to form a silicon thin film (eg, microcrystalline silicon, polysilicon, etc.) having a piezoresistance effect. This silicon thin film is then patterned to form a bridge circuit. In the device of FIG. 1, the underlying bridges Yl, Y2 will be formed. In the cross-sectional view of FIG. 2, a cross-section of a resistive cable R8, which is a component of the bridge Y1, is shown.
続いて酸化シリコン、窒化シリコンなどの層間絶縁膜２
をＣＶＤ法で堆積したのち、再びシリコン薄膜を形成、
バターニングしてブリッジ回路を形成する。第１図の装
置では、上層にあるブリッジＸＩ、Ｘ２が形成される。Next, an interlayer insulating film 2 of silicon oxide, silicon nitride, etc.
After depositing by CVD method, a silicon thin film is formed again.
Pattern it to form a bridge circuit. In the device of FIG. 1, the upper layer bridges XI, X2 are formed.
ことになる。第２図の断面図では、ブリッジＸ１の構成
要素である抵抗素子Ｒ２，Ｒ４の断面示示されている。It turns out. The cross-sectional view of FIG. 2 shows a cross-section of resistive elements R2 and R4, which are constituent elements of the bridge X1.
ここで再び層間絶縁膜２をＣＶＤ法で堆積すれば、第２
図に示すような構造を得る。このあと、コンタクトホー
ルの開口を行い、後述する所定の配線をアルミニウムな
どの導体で行う。Here, if the interlayer insulating film 2 is deposited again by the CVD method, the second
Obtain the structure shown in the figure. After this, contact holes are opened, and predetermined wiring, which will be described later, is performed using a conductor such as aluminum.
ブリッジ回路の配線
第３図にブリッジＸ１についての配線を一例として示す
。前述のようにこのブリッジは４つの抵抗素子Ｒ１〜Ｒ
４によって構成されているが、図にハツチングで示すそ
れぞれの連結部３にアルミニウムによる配線層Ｗ１〜Ｗ
４が接続される。第３図に示すように配線層Ｗｌ、Ｗ３
を下方に、配線層Ｗ２．Ｗ４を上方にそれぞれ配線し、
下方の配線層Ｗ１．Ｗ３間に電源４を、上方の配線層Ｗ
２．Ｗ４間に電圧計５をそれぞれ接続すれば、第４図に
示すブリッジ回路が構成される。ブリッジＹ１について
も同様に、配線層Ｗ５〜Ｗ８を接続し、配線層Ｗ５．Ｗ
７間に電源を、配線層Ｗ６゜Ｗ８間に電圧計を、それぞ
れ接続してブリッジ回路を構成する。Wiring of Bridge Circuit FIG. 3 shows the wiring for bridge X1 as an example. As mentioned above, this bridge consists of four resistive elements R1 to R.
4, wiring layers W1 to W made of aluminum are provided at each connecting portion 3 shown by hatching in the figure.
4 is connected. As shown in FIG. 3, wiring layers Wl, W3
below, the wiring layer W2. Wire W4 upwards,
Lower wiring layer W1. Power supply 4 is connected between W3 and the upper wiring layer W
2. If a voltmeter 5 is connected between W4, a bridge circuit shown in FIG. 4 is constructed. Similarly, for the bridge Y1, the wiring layers W5 to W8 are connected, and the wiring layers W5. W
A power supply is connected between wiring layers W6 and W8, and a voltmeter is connected between wiring layers W6 and W8 to form a bridge circuit.
第５図は、多数の抵抗素子を上述のようにブリッジ構成
し、これを１チツプに納めた装置である。FIG. 5 shows a device in which a large number of resistive elements are arranged in a bridge structure as described above and housed in one chip.
半導体チップ６の中には、第１図に示すような構造をし
た多数のブリッジからなる第１の抵抗素子群と、第２の
抵抗素子群とが形成されており、それぞれから配線層Ｗ
１〜Ｗ８が導出されている。In the semiconductor chip 6, there are formed a first resistance element group and a second resistance element group consisting of a large number of bridges having a structure as shown in FIG.
1 to W8 have been derived.
そこで配線層Ｗｌ、Ｗ３．Ｗ５．Ｗ７には電源を、配線
層Ｗ２．Ｗ４．Ｗ６．Ｗ８には電圧計を、それぞれ半導
体チップ６の外部に接続して用いることになる。なお、
半導体チップ６は支持基体７の上の固着されている。Therefore, the wiring layers Wl, W3. W5. A power supply is applied to W7, and a wiring layer W2. W4. W6. Voltmeters are connected to the outside of the semiconductor chip 6 for each W8. In addition,
A semiconductor chip 6 is fixed on a support base 7.
装置の動作
各抵抗素子Ｒは、ピエゾ抵抗効果を有するシリコンの薄
膜からなる。このため、力が加わると、電気抵抗が変化
することになる。いま、たとえば第３図の構成において
、検出用抵抗素子Ｒ２゜Ｒ４に力が加わったとすると、
第４図に示すようにこの検出用抵抗素子Ｒ２，Ｒ４はブ
リッジの対辺をなすので、ブリッジ電圧が電圧計５によ
って検出できる。検出面のＸ方向には第３図に示すブリ
ッジＸ１と同じ構造をもったブリッジが多数配列されて
第１の抵抗素子群を構成しているため、検出面の任意の
一点に力が作用した場合、そのＸ方向の位置は、第１の
抵抗素子群に属するブリッジのブリッジ電圧を検出する
ことによって特定でき、その大きさはブリッジ電圧の大
きさによって特定できる。また、Ｙ方向の位置について
は、第２の抵抗素子群に属するブリッジによって同様に
特定できる。このようにして二次元平面」二の加重分布
の測定が可能になる。Operation of the Device Each resistive element R is made of a silicon thin film having a piezoresistive effect. Therefore, when force is applied, the electrical resistance changes. For example, in the configuration shown in FIG. 3, if a force is applied to the detection resistance element R2°R4,
As shown in FIG. 4, the detection resistance elements R2 and R4 form opposite sides of the bridge, so the bridge voltage can be detected by the voltmeter 5. In the X direction of the detection surface, a large number of bridges having the same structure as bridge In this case, its position in the X direction can be specified by detecting the bridge voltage of the bridge belonging to the first resistance element group, and its magnitude can be specified by the magnitude of the bridge voltage. Further, the position in the Y direction can be similarly specified by the bridge belonging to the second resistance element group. In this way, it becomes possible to measure the weight distribution in a two-dimensional plane.
本発明の原理によれば、各抵抗素子を必ずしもブリッジ
構成する必要はない。各抵抗素子を単独で配列しても検
出を行うことはできる。しかしながら、抵抗素子は応力
以外の要因によって電気抵抗が変化する可能性があり、
このような要因の影響を相殺するためには本実施例のよ
うにブリッジ構成するのが好ましい。たとえば、温度の
変化によって抵抗素子の電気抵抗に変化が生じるが、ブ
リッジを構成しておけば、検出用抵抗素子と同様に連結
用抵抗素子も抵抗変化を生じるため、温度、変化による
影響はブリッジによって相殺され、温度変化が測定値に
与える影響を軽減することができる。According to the principles of the present invention, each resistance element does not necessarily have to be configured in a bridge configuration. Detection can also be performed by arranging each resistance element singly. However, the electrical resistance of resistive elements may change due to factors other than stress.
In order to offset the influence of such factors, it is preferable to use a bridge configuration as in this embodiment. For example, a change in temperature causes a change in the electrical resistance of a resistance element, but if a bridge is configured, the resistance of the connection resistance element will also change in the same way as the detection resistance element, so the effects of temperature and changes will be eliminated by the bridge. The effect of temperature changes on measured values can be reduced.
なお前述のように、連結用抵抗素子は検出用抵抗素子に
比べて長さが非常に短くなる。ところが、ブリッジの精
度を高めるためには、ブリッジを構成する４つの抵抗素
子の抵抗値をなるべく同じ大きさにするのが好ましい。Note that, as described above, the length of the connection resistance element is much shorter than that of the detection resistance element. However, in order to improve the accuracy of the bridge, it is preferable to make the resistance values of the four resistance elements constituting the bridge the same as possible.
したがって、検出用抵抗素子に比べて連結用抵抗素子の
幅を狭くし、両者の抵抗値をほぼ等しくするのがよい。Therefore, it is preferable to make the width of the connecting resistive element narrower than that of the detecting resistive element, and to make the resistance values of both approximately equal.
また、第５図に示す支持基体７として、シリコンゴムの
ような弾性体を用いれば、検出面の各微小位置における
荷重の有無を０Ｎ１０ＦＦの形で測定するのに適した装
置が構成でき、弾性領域の広い金属を用いれば、荷重値
に対する線形出力を得るのに適した装置が構成できる。Furthermore, if an elastic body such as silicone rubber is used as the support base 7 shown in FIG. By using a metal with a large area, a device suitable for obtaining a linear output with respect to a load value can be constructed.
以上のように、本実施例に係る装置は従来のものに比べ
て構造が非常に単純になる。たとえば、Ｘ方向を１００
分割、Ｙ方向を１００分割した分解能で荷重分布の測定
を行なえる装置について考えると、従来装置では１００
Ｘ１００−１００００個もの検出素子を二次元的に配列
し、これらそれぞれについて配線を行わねばならなかっ
たが、本実施例に係る装置では、同じ分解能のものを１
００＋１００−２００個のブリッジで実現でき、この２
００個のブリッジについての配線を行うだけでよい。し
かも、本実施例に係る装置は半導体プレーナプロセスに
よって製造することができ、量産性も向上する。As described above, the device according to this embodiment has a much simpler structure than the conventional device. For example, set the X direction to 100
Considering a device that can measure load distribution with a resolution of 100 divisions in the Y direction, conventional devices have a resolution of 100 divisions.
It was necessary to arrange 100 to 10,000 detection elements two-dimensionally and conduct wiring for each of them, but in the device according to this embodiment, detection elements with the same resolution can be arranged in one
It can be realized with 00+100-200 bridges, and these 2
Only 00 bridges need to be wired. Moreover, the device according to this embodiment can be manufactured by a semiconductor planar process, and mass productivity is improved.
以上のとおり本発明によれば、二次元平面上の力検出装
置を構成する絶縁基板上に２とおりの方向を向いた多数
の検出用抵抗素子を形成し、この検出用抵抗素子の電気
抵抗の変化によって加わる力を検出するようにしたため
、構造が単純になり、量産に適したものになる。As described above, according to the present invention, a large number of detection resistance elements oriented in two directions are formed on an insulating substrate constituting a force detection device on a two-dimensional plane, and the electrical resistance of the detection resistance elements is Since it detects the force applied due to change, the structure is simple and suitable for mass production.
第１図は本発明の一実施例に係る二次元平面上の力検出
装置の検出部の構成図、第２図は第１図に示す装置にお
ける単結晶基板内の具体的構成例を示す断面図、第３図
は第１図に示す装置のブリッジＸ１についての配線例を
示す図、第４図は第３図のブリッジの等価回路図、第５
図は、多数の抵抗素子をブリッジ構成して１チツプに納
めた装置の斜視図である。
１・・・絶縁基板、２・・・層間絶縁膜、３・・・連結
部、４・・・電源、５・・・電圧計、６・・・半導体チ
ップ、７・・・支持基体、ＸＩ、Ｘ２．Ｙｌ、Ｙ２・・
・ブリッジ、Ｒ１−Ｒ８・・・抵抗素子、Ｗ１〜Ｗ８・
・・配線層。
出願人代理人 佐 藤 −雄
も５図FIG. 1 is a configuration diagram of a detection unit of a two-dimensional plane force detection device according to an embodiment of the present invention, and FIG. 2 is a cross section showing a specific example of the configuration inside a single crystal substrate in the device shown in FIG. 3 is a diagram showing a wiring example for the bridge X1 of the device shown in FIG. 1, FIG. 4 is an equivalent circuit diagram of the bridge in FIG. 3, and FIG.
The figure is a perspective view of a device in which a large number of resistive elements are arranged in a bridge configuration and housed in one chip. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... Interlayer insulating film, 3... Connecting part, 4... Power supply, 5... Voltmeter, 6... Semiconductor chip, 7... Support base, XI ,X2. Yl, Y2...
・Bridge, R1-R8...Resistance element, W1-W8・
...Wiring layer. Applicant's representative Mr. Sato-O also Figure 5
Claims (1)
第１の層上に、第１の方向を向いた多数の検出用抵抗素
子からなる第１の抵抗素子群を形成し、前記第１の層と
は異なる第２の層上に、前記第１の方向とは異なる第２
の方向を向いた多数の検出用抵抗素子からなる第２の抵
抗素子群を形成し、 前記各抵抗素子は、機械的変形によって電気抵抗が変化
する性質をもつものとし、 前記第１の抵抗素子群の電気抵抗の変化と、前記第２の
抵抗素子群の電気抵抗の変化とを検出し、これらの検出
結果に基づいて前記検出面上に作用する力の位置および
大きさを検出できるようにしたことを特徴とする二次元
平面上の力検出装置。 ２、第１の方向を長手方向とした２つの検出用抵抗素子
と、第２の方向を向き前記検出用抵抗素子に比べて十分
短い長さをもった２つの連結用抵抗素子とをそれぞれ接
続して構成されるブリッジを複数並べることにより第１
の抵抗素子群を構成し、 前記第２の方向を長手方向とした２つの検出用抵抗素子
と、前記第１の方向を向き前記検出用抵抗素子に比べて
十分短い長さをもった２つの連結用抵抗索子とをそれぞ
れ接続して構成されるブリッジを複数並べることにより
第２の抵抗素子群を構成し、 前記各ブリッジのブリッジ電圧によって抵抗素子の電気
抵抗の変化を検出することを特徴とする特許請求の範囲
第１項記載の二次元平面上の力検出装置。 ３、検出用抵抗素子の抵抗値と連結用抵抗素子の抵抗値
がほぼ等しくなるように構成したことを特徴とする特許
請求の範囲第２項記載の二次元平面上の力検出装置。 ４、連結用抵抗素子の幅を検出用抵抗素子の幅に比べて
狭くすることにより両者の抵抗値をほぼ等しくしたこと
を特徴とする特許請求の範囲第３項記載の二次元平面上
の力検出装置。 ５、連結用抵抗素子の不純物濃度を検出用抵抗素子の不
純物濃度に比べて低くすることにより両者の抵抗値をほ
ぼ等しくしたことを特徴とする特許請求の範囲第３項記
載の二次元平面上の力検出装置。 ６、抵抗素子が半導体プレーナプロセスによって絶縁基
板上に形成されていることを特徴とする特許請求の範囲
第１項乃至第５項のいずれかに記載の二次元平面上の力
検出装置。 ７、絶縁基板の下層に弾性をもった支持基板が形成され
ていることを特徴とする特許請求の範囲第１項乃至第６
項のいずれかに記載の二次元平面上の力検出装置。[Claims] 1. A first resistive element consisting of a large number of detecting resistive elements facing in a first direction on a first layer on an insulating substrate spread over a two-dimensional plane serving as a detection surface. on a second layer different from the first layer, a second layer different from the first direction.
forming a second resistance element group consisting of a large number of detection resistance elements facing in the direction of the first resistance element, each of the resistance elements having a property that electrical resistance changes due to mechanical deformation; A change in the electrical resistance of the group and a change in the electrical resistance of the second resistance element group are detected, and the position and magnitude of the force acting on the detection surface can be detected based on these detection results. A force detection device on a two-dimensional plane characterized by the following. 2. Connecting two detection resistance elements whose longitudinal direction is in the first direction and two connection resistance elements which are oriented in the second direction and have a sufficiently shorter length than the detection resistance elements. By arranging multiple bridges configured as
two detection resistance elements whose longitudinal direction is oriented in the second direction, and two detection resistance elements whose longitudinal direction is oriented in the first direction and whose length is sufficiently shorter than that of the detection resistance elements. A second resistance element group is formed by arranging a plurality of bridges each connected to a connecting resistance cord, and a change in the electrical resistance of the resistance element is detected based on the bridge voltage of each bridge. A force detection device on a two-dimensional plane according to claim 1. 3. The device for detecting force on a two-dimensional plane according to claim 2, characterized in that the resistance value of the detection resistance element and the resistance value of the connection resistance element are substantially equal. 4. A force on a two-dimensional plane according to claim 3, characterized in that the width of the connecting resistive element is made narrower than the width of the detecting resistive element, so that the resistance values of both are made almost equal. Detection device. 5. On a two-dimensional plane according to claim 3, wherein the impurity concentration of the connecting resistive element is lower than that of the detecting resistive element, so that the resistance values of both are made almost equal. force detection device. 6. A force detection device on a two-dimensional plane according to any one of claims 1 to 5, wherein the resistance element is formed on an insulating substrate by a semiconductor planar process. 7. Claims 1 to 6, characterized in that an elastic supporting substrate is formed under the insulating substrate.
2. A force detection device on a two-dimensional plane according to any one of the items.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10127187A JPH0640037B2 (en) | 1987-04-24 | 1987-04-24 | Force detector on two-dimensional plane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10127187A JPH0640037B2 (en) | 1987-04-24 | 1987-04-24 | Force detector on two-dimensional plane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63266328A true JPS63266328A (en) | 1988-11-02 |
| JPH0640037B2 JPH0640037B2 (en) | 1994-05-25 |
Family
ID=14296220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10127187A Expired - Lifetime JPH0640037B2 (en) | 1987-04-24 | 1987-04-24 | Force detector on two-dimensional plane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0640037B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2040053A1 (en) * | 2006-07-06 | 2009-03-25 | Fundacio Privada Per A La Innovacio Textil D'Igual | Torsion and/or tension and/or pressure textile sensor |
| JP2020016444A (en) * | 2018-07-23 | 2020-01-30 | ミネベアミツミ株式会社 | Tactile sensor |
| JP2022177203A (en) * | 2018-07-23 | 2022-11-30 | ミネベアミツミ株式会社 | tactile sensor |
-
1987
- 1987-04-24 JP JP10127187A patent/JPH0640037B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2040053A1 (en) * | 2006-07-06 | 2009-03-25 | Fundacio Privada Per A La Innovacio Textil D'Igual | Torsion and/or tension and/or pressure textile sensor |
| JP2009543030A (en) * | 2006-07-06 | 2009-12-03 | ファンダシオ プリヴァーダ パー ア ラ イノヴァシオ テクスティル ドイグアラダ | Pressure and / or tension and / or twist fiber sensor |
| EP2040053A4 (en) * | 2006-07-06 | 2014-05-07 | Fundacio Privada Per A La Innovacio Textil D Igual | Torsion and/or tension and/or pressure textile sensor |
| JP2020016444A (en) * | 2018-07-23 | 2020-01-30 | ミネベアミツミ株式会社 | Tactile sensor |
| WO2020022011A1 (en) * | 2018-07-23 | 2020-01-30 | ミネベアミツミ株式会社 | Tactile sensor |
| JP2022177203A (en) * | 2018-07-23 | 2022-11-30 | ミネベアミツミ株式会社 | tactile sensor |
| US11796402B2 (en) | 2018-07-23 | 2023-10-24 | Minebea Mitsumi Inc. | Tactile sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0640037B2 (en) | 1994-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI612852B (en) | Process condition sensing device and method for plasma chamber | |
| US6542835B2 (en) | Data collection methods and apparatus | |
| US20040183554A1 (en) | Reduction of positional errors in a four point probe resistance measurement | |
| US4739381A (en) | Piezoresistive strain sensing device | |
| KR890000880A (en) | Detector using the rotating element | |
| US8550707B2 (en) | Device for detecting temperature variations in a chip | |
| Alpuim et al. | Piezoresistive silicon thin film sensor array for biomedical applications | |
| US7934430B2 (en) | Die scale strain gauge | |
| JP3579040B2 (en) | Current measuring device and current measuring method | |
| JPS63266328A (en) | Force detector on two-dimensional plane | |
| US3341772A (en) | Device for measuring locally dependent differences between the magnetic field gradient at different points of a magnetic field | |
| JPS63266325A (en) | Force detector | |
| JPH11118616A (en) | Temperature sensor, semiconductor wafer with temperature measuring function, and method of forming thermocouple sensor | |
| JP2551625B2 (en) | Semiconductor acceleration sensor | |
| JP2017505425A (en) | System and corresponding method for determining at least part of the shape of a three-dimensional object | |
| CN202609923U (en) | Online synchronous testing device of thickness of phosphorosilicate glass and polycrystalline silicon | |
| JP2020085668A (en) | Magnetic sensor | |
| Herrmann et al. | Design and characterization of in-plane silicon stress sensors with isotropic sensitivity | |
| JPH0564863B2 (en) | ||
| JPH0326931A (en) | Strain gage type load cell | |
| Mian et al. | A high sensitive piezoresistive sensor for stress measurements in packaged semiconductor die | |
| JPH0431533Y2 (en) | ||
| CN102701146A (en) | Device for testing thickness of phosphorosilicate glass and polycrystalline silicon synchronously on line | |
| JPS61214582A (en) | Semiconductor pressure converter | |
| JP2890682B2 (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |