JPS63261625A - Manufacture of superconductive thin film - Google Patents
Manufacture of superconductive thin filmInfo
- Publication number
- JPS63261625A JPS63261625A JP62096648A JP9664887A JPS63261625A JP S63261625 A JPS63261625 A JP S63261625A JP 62096648 A JP62096648 A JP 62096648A JP 9664887 A JP9664887 A JP 9664887A JP S63261625 A JPS63261625 A JP S63261625A
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal
- thin film
- substrate
- cathodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011737 fluorine Substances 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 238000010891 electric arc Methods 0.000 claims abstract description 6
- 230000003628 erosive effect Effects 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 150000002739 metals Chemical class 0.000 abstract description 12
- 238000004090 dissolution Methods 0.000 abstract description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- -1 D y Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は超電導薄膜の製造方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing a superconducting thin film.
（背景となる技術およびその問題点）
超電導材料の応用分野として、たとえばジョセフソン素
子や５ＱＵＩＤセンサーなど各種クライオエレクトロニ
クスデパスがきわめて有望である。(Background technology and its problems) As an application field of superconducting materials, various cryoelectronic devices such as Josephson devices and 5QUID sensors are extremely promising.
ところが、従来の超電導材料は、焼結により酸化物セラ
ミックスを製作しており、その薄膜化が困難であった。However, conventional superconducting materials are made of oxide ceramics by sintering, and it is difficult to make them thin.
この発明は上述の事柄に鑑み、基体の表面に超電導薄膜
を形成することを目的とする。In view of the above-mentioned problems, the present invention aims to form a superconducting thin film on the surface of a substrate.
（問題点を解決するための手段）
この発明は酸素または弗素ガス雰囲気中において、基体
またはこれを保持するホルダに負のバイアス電圧を印加
した状態で、Ｉａ族金属とＩａ族金属とＩｂ族金属また
はこれらの合金からなるカソードを、真空アーク放電に
よってエロージヨンすることにより、基体表面に超電導
薄膜を形成することを特徴とする。(Means for Solving the Problems) The present invention provides a method for forming a group Ia metal, a group Ia metal, and a group Ib metal in an oxygen or fluorine gas atmosphere while applying a negative bias voltage to a substrate or a holder holding the substrate. Alternatively, a superconducting thin film is formed on the surface of the substrate by eroding a cathode made of these alloys by vacuum arc discharge.
（作用）
カソードは真空アーク放電により二ロージョンされ、ｌ
ｌａ族金属とＩａ族金属とＩｂ族金属またはこれらの合
金からなる金属蒸気を発生し、これがイオン化されてプ
ラズマを生成する。このプラズマ中のイオン粒子は、負
のバイアス電圧によって基体表面に引きつけられ、その
際雰囲気中の酸素または弗素ガス分子と反応し、気相物
理蒸着１こより基体表面に超電導薄膜が形成される。(Function) The cathode is subjected to two injections by vacuum arc discharge, and
A metal vapor consisting of a group Ia metal, a group Ia metal, a group Ib metal, or an alloy thereof is generated, and this is ionized to generate plasma. Ion particles in this plasma are attracted to the substrate surface by a negative bias voltage, and at this time react with oxygen or fluorine gas molecules in the atmosphere, forming a superconducting thin film on the substrate surface by vapor phase physical vapor deposition.
（実施例） 以下この発明の一実施例を図によって説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
図はこの発明に使用するのに適した薄膜形成装置を示す
。１はＣｕ、 Ａｇ、 Ａｕなどのｔｂ族金属からなる
カソード、２はＣａ、 Ｓｒ、 Ｂａ、 ＲａなどｃＤ
Ｉａ族金属からなるカソード、３はＳｃ、 Ｙ、 Ｌａ
、 Ｃｅ、 Ｐｒ。The figure shows a thin film forming apparatus suitable for use with the present invention. 1 is a cathode made of a tb group metal such as Cu, Ag, or Au, and 2 is a cD such as Ca, Sr, Ba, or Ra.
Cathode made of group Ia metal, 3 is Sc, Y, La
, Ce, Pr.
Ｎｄ、 Ｐｍ、 Ｓｍ、 Ｅｕ、 Ｇｄ、 Ｔｂ、 Ｄ
ｙ、 Ｈｏ、 Ｅｒ、 Ｔｍ。Nd, Pm, Sm, Eu, Gd, Tb, D
y, Ho, Er, Tm.
Ｙｂ、ＬｕなどのＩａ族金属からなるカソードで、これ
らカソード１〜′５は図示しない絶縁物を介して真空容
器４に気密状態に取付けられている。The cathodes 1 to '5 are made of group Ia metals such as Yb and Lu, and are airtightly attached to the vacuum container 4 via an insulator (not shown).
５は真空容器４の外部に設けられたトリガ電極駆動用の
金属製のエアシリンダで、このエアシリンダ５の金属製
のピストンロッド６は、真空容器４を気密に進退自在に
貫通し、かつ真空容器４から電気的に絶縁されている。Reference numeral 5 denotes a metal air cylinder for driving a trigger electrode provided outside the vacuum container 4. A metal piston rod 6 of this air cylinder 5 passes through the vacuum container 4 in a hermetic manner so as to be freely movable and retractable. It is electrically insulated from the container 4.
このピストンロッド６の先端にはかぎ形状に折曲したワ
イヤ状のトリガ電極７が、その先端を前記カソード１〜
６に対応するように固着されている。A wire-shaped trigger electrode 7 bent into a hook shape is attached to the tip of the piston rod 6, and its tip is connected to the cathode 1 to
It is fixed to correspond to 6.
各カソード１〜３と真空容器４との間には、それぞれア
ーク電ｓ８を、各トリガ電極７と真空容器４との間には
、それぞれ電流制限用の抵抗９を接続し、各カソード１
〜６と真空容器４間にアーク電圧を、また各トリガ電極
７と真空容器４間にトリガ電圧をそれぞれ印加するよう
に構成する。An arc current s8 is connected between each cathode 1 to 3 and the vacuum vessel 4, and a current limiting resistor 9 is connected between each trigger electrode 7 and the vacuum vessel 4.
6 and the vacuum container 4, and a trigger voltage is applied between each trigger electrode 7 and the vacuum container 4, respectively.
１０はその表面に超ｗＬ導倚嗅が形成される基体で、こ
の基体１０またはこれを保持するホルダ１１と真空容器
４との間にバイアス電＃１２を接続し、基体１０または
これを保持するホルダ１１に１０〜５００ｖ程度の負の
バイアス電圧を印加するようにも１成する。前記ホルダ
１１は基板１０を保持した状態で成膜中矢印のよう回転
するように形、成されている。Reference numeral 10 denotes a base on which an ultra-wL conductor is formed, and a bias voltage #12 is connected between the base 10 or a holder 11 that holds it and the vacuum container 4, and the base 10 or a holder that holds this is connected. A negative bias voltage of approximately 10 to 500 V is applied to the circuit 11. The holder 11 is shaped and configured to rotate as shown by the arrow during film formation while holding the substrate 10.
１６は真空容器４内に、酸素または弗素ガスを導入する
ための導入ノズルで、１４は酸素または弗素ガスボンベ
である。１５はバルブ、１６は真空容器４内を１０−３
〜１０−’ Ｔｏｒｒ程度に排気するため゛の真空ポン
プである。16 is an introduction nozzle for introducing oxygen or fluorine gas into the vacuum container 4, and 14 is an oxygen or fluorine gas cylinder. 15 is the valve, 16 is the inside of the vacuum container 4 10-3
This is a vacuum pump for evacuation to about 10-' Torr.
以上の構成において、真空容器４内を１０−３〜１Ｏ−
６Ｔｏｒｒ程度の真空に排気した後、バルブ１５を開き
、１０−１〜１０−４Ｔｏｒｒ程度の酸素または弗素ガ
スを導入し、前記基体１０に負のバイアス電圧を印加し
た状態で、図示しないバルブを操作してエアシリンダ５
のピストンロッド６を後退させ、各カソード１〜３に各
トリガ電極７の先端を接触させる。ξの結果、各アーク
電源８によって各トリガ電極７と各カソード１〜３間に
各抵抗？で制限された各電流が流れる。In the above configuration, the inside of the vacuum container 4 is 10-3 to 1O-
After evacuating to a vacuum of about 6 Torr, the valve 15 is opened and oxygen or fluorine gas of about 10-1 to 10-4 Torr is introduced, and while a negative bias voltage is applied to the base 10, a valve (not shown) is operated. and air cylinder 5
The piston rod 6 is moved back, and the tip of each trigger electrode 7 is brought into contact with each of the cathodes 1 to 3. As a result of ξ, each arc power source 8 connects each resistor between each trigger electrode 7 and each cathode 1 to 3? Each current limited by .
その後、図示しないバルブを操作してエアシリンダ５の
ピストンロッド６を前進させ、トリガ電極７を各カソー
ド１〜３から離す。このときに上記の給電路のインダク
タンス成分によって各トリガ電極７と各カソード１〜３
との間に種火となるアークが点弧し、このアークによっ
て各カソード１〜３に十分なエネルギーが与えられ、カ
ソード１〜３はエロージョンされ、Ｉｂ族金属、ｌｌａ
族金属および厘ａ族金属からなる金属蒸気が発生しイオ
ン化され、前記アークが各カソード１〜６と真空容器４
との間に移行し持続、する。仁の結果、真空容器４内の
酸素または弗素ガス雰囲気中に、イオン化プラズマが生
成され、これが負のバイアス電圧によって基体１０に引
きつけられ、その際これら金属イオンとガス分子とが反
応し、気相物理蒸着により基体１０表面に超電導薄膜が
形成される。Thereafter, the piston rod 6 of the air cylinder 5 is moved forward by operating a valve (not shown), and the trigger electrode 7 is separated from each of the cathodes 1 to 3. At this time, each trigger electrode 7 and each cathode 1 to 3 are
An arc serving as a pilot fire is ignited between the two, and sufficient energy is given to each cathode 1 to 3 by this arc, and the cathodes 1 to 3 are eroded, and the Ib group metal
Metal vapor consisting of Group A metals and Group A metals is generated and ionized, and the arc connects each cathode 1 to 6 and the vacuum vessel 4.
transition between and persist and do. As a result of this, an ionized plasma is generated in the oxygen or fluorine gas atmosphere in the vacuum vessel 4, which is attracted to the substrate 10 by a negative bias voltage, during which these metal ions and gas molecules react, and the gas phase A superconducting thin film is formed on the surface of the base 10 by physical vapor deposition.
前記アーク電流を制御することにより、各カソード１〜
３のエロージョン、すなわち溶解量を調整でキ、シたが
って、これにより基体１０表面に形成される薄膜のＩｂ
族金属、Ｉａ族金属およびＩａ族金属の元素割合を調整
する仁とができる。By controlling the arc current, each cathode 1~
3.Erosion, that is, the amount of dissolution can be adjusted, so that the Ib of the thin film formed on the surface of the substrate 10 is reduced.
It is possible to adjust the element proportions of group metals, group Ia metals, and group Ia metals.
また、前記カソード１〜６に代えて、Ｉｂ族金属、Ｉａ
族金属および璽ａ族金属の元素を、所望割合に調合し合
金化したものをカソードとして用いても、あるいは、合
金化したものと単一元素からなるものとを組合せて構成
してもよいのは勿論である。Moreover, in place of the cathodes 1 to 6, group Ib metal, Ia
The cathode may be formed by mixing and alloying group metals and B-A group metals in desired proportions, or by combining an alloyed material with a single element. Of course.
前記アーク電源８としては、通常１〜１０００ Ａの範
囲で定電流動作が可能で、トリガ電極７に放電時のアー
ク電圧として５〜１００ｖ供給できるものであればよい
。The arc power source 8 may be of any type as long as it is capable of constant current operation in the range of 1 to 1000 A and can supply the trigger electrode 7 with an arc voltage of 5 to 100 V during discharge.
前述のアークが消弧した場合には、再度エアシリンダ５
にてトリガ電極７を再度駆動し、再点弧すればよい。ま
た、前記エアシリンダ５に代えて電磁石などを用いてト
リガ電極７を機械的に駆動してもよい。更には、トリガ
電極７を機械的に駆動せず、電気的にたとえば、抵抗９
に代えてコンデンサと振動抑止抵抗とギャップスイッチ
の直列回路を接続し、前記コンデンサを予じめ充電電源
によって充電しておき、始動電源によりギャップスイッ
チに火花放電を生じさせ、これによってカソード１〜６
とトリガｆＱ！８３ｉ１７との間で前記コンデンサの充
電電圧に基づいてアーク放電を生じさせるようにしても
よい。When the aforementioned arc is extinguished, the air cylinder 5 is turned on again.
What is necessary is to drive the trigger electrode 7 again and re-ignite it. Furthermore, instead of the air cylinder 5, an electromagnet or the like may be used to mechanically drive the trigger electrode 7. Furthermore, the trigger electrode 7 is not driven mechanically, but electrically, for example, by a resistor 9.
Instead, a series circuit of a capacitor, a vibration suppression resistor, and a gap switch is connected, and the capacitor is charged in advance by a charging power source, and a spark discharge is caused in the gap switch by the starting power source, thereby causing cathodes 1 to 6 to
and trigger fQ! 83i17 may be generated based on the charging voltage of the capacitor.
次に本発明者が行なった成膜実験について説明する。Next, a film forming experiment conducted by the present inventor will be explained.
（成膜実験その１）
カソード１〜６としてＣｕ、 Ｂａ、 Ｙの純金属を用
い、基体１０として予じめフレオン系洗浄装置により洗
浄したステンレス板を用い、このステンレス板をホルダ
１１にて保持した後、真空容器４内を１０ Ｔｏｒｒ
以下に排気し、その後水素とヘリウムの混合ガスを１０
０ｍＴｏｒｒ導入し、ステンレス板にバイアス電圧１０
００Ｖ印加し、グロー放電を起こし、ステンレス板から
なる基体１０の放電洗浄を行なった。(Film forming experiment 1) Pure metals such as Cu, Ba, and Y were used as the cathodes 1 to 6, and a stainless steel plate that had been previously cleaned with a freon-based cleaning device was used as the substrate 10, and this stainless steel plate was held in the holder 11. After that, the inside of the vacuum container 4 is set to 10 Torr.
Evacuate to below, then add a mixture of hydrogen and helium gas to 10
0 mTorr is introduced, and a bias voltage of 10 is applied to the stainless steel plate.
00V was applied to generate glow discharge, and the base 10 made of a stainless steel plate was discharge-cleaned.
その後、真空容器４内を１Ｏ−６Ｔｏｒｒまで排気して
からフッ化アルゴンガスを導入し、真空容器４内のフッ
化アルゴンガス圧力が２０ｍＴｏｒｒになるように調整
しつつ、ステンレス板からなる基体１０に一３００Ｖの
負のバイアス電圧を印加し、ホルダ１１を４ｒｐｍで回
転した状態で、前記各カソード１〜６を陰極、真空容器
４を陽極とし、前記Ｃｕからなるカソード１には９０Ａ
１Ｂａからなるカソード２には５０Ａ、Ｙからなるカソ
ードには８０Ａのアーク電流をそれぞれ流し、真空アー
ク放電を起して成膜実験を行なった。Thereafter, the inside of the vacuum container 4 is evacuated to 10-6 Torr, and then argon fluoride gas is introduced, and while adjusting the argon fluoride gas pressure in the vacuum container 4 to 20 mTorr, the substrate 10 made of a stainless steel plate is heated. - Applying a negative bias voltage of 300 V and rotating the holder 11 at 4 rpm, each of the cathodes 1 to 6 is used as a cathode, the vacuum container 4 is used as an anode, and the cathode 1 made of Cu is heated at 90 A.
An arc current of 50 A was applied to the cathode 2 made of 1Ba, and an arc current of 80 A was applied to the cathode made of Y to generate a vacuum arc discharge to conduct a film formation experiment.
これによってステンレス板からなる基体１０の表面に、
厚゛さ１μｍのＢａ−Ｙ−Ｃｕ弗化物からなる超電導薄
膜を形成した。この超電導薄膜に金電極を蒸着し、液体
窒素中で電気抵抗を測定したところ０であった。As a result, on the surface of the base body 10 made of a stainless steel plate,
A superconducting thin film made of Ba-Y-Cu fluoride with a thickness of 1 μm was formed. A gold electrode was deposited on this superconducting thin film, and the electrical resistance was measured in liquid nitrogen and found to be 0.
（成膜実験その２）
カソードとして、Ｙ、 Ｂａ、 Ｃｕの粉末をモル比で
３：６：４の割合で混合し、加熱静水圧法にて焼結した
ものを、また基体１０としてステンレス板を用い、この
ステンレス板を前記成膜実験その１と同様、予じめフレ
オン系洗浄および放電洗浄を行なった後、真空容器４内
を１Ｏ−６Ｔｏｒｒまで排気してから酸素ガスを導入し
、真空容器４内の酸素ガス圧力が２０ｍＴｏｒｒになる
ように調整しつつ、ステンレス板からなる基体１０に一
４００Ｖの負のバイアス電圧を印加した状態で、前記カ
ソードを陰極、真空容器４を陽極として１００Ａのアー
ク電流を流し、真空アーク放電を起して成膜実験を行な
った。(Film Forming Experiment Part 2) As a cathode, a mixture of powders of Y, Ba, and Cu in a molar ratio of 3:6:4 was sintered using a heating isostatic pressure method, and as a substrate 10, a stainless steel plate was used. This stainless steel plate was previously subjected to freon cleaning and discharge cleaning in the same manner as in the film formation experiment part 1, and then the inside of the vacuum chamber 4 was evacuated to 10-6 Torr, oxygen gas was introduced, and vacuum While adjusting the oxygen gas pressure in the container 4 to 20 mTorr and applying a negative bias voltage of -400 V to the base 10 made of a stainless steel plate, a voltage of 100 A was applied using the cathode as a cathode and the vacuum container 4 as an anode. A film deposition experiment was conducted by applying an arc current and causing a vacuum arc discharge.
これによってステンレス板からなる基体１０の表面に、
厚さ１μｍのＹ−Ｂａ−Ｃｕ酸化物からなる超電導薄膜
を形成した。この超電導薄膜に金電極を蒸着し、液体窒
素中で電気抵抗を測定したところ０であった。As a result, on the surface of the base body 10 made of a stainless steel plate,
A superconducting thin film made of Y-Ba-Cu oxide and having a thickness of 1 μm was formed. A gold electrode was deposited on this superconducting thin film, and the electrical resistance was measured in liquid nitrogen and found to be 0.
なお、上述した成膜実験では、基板１０を加熱していな
いが、必要に応じて加熱しなから成膜を行なっても、あ
るいは成膜後にアニーリング処理を行なうようにしても
よいのは勿論である。Although the substrate 10 was not heated in the film formation experiment described above, it is of course possible to perform film formation without heating, or to perform an annealing treatment after film formation, if necessary. be.
（発明の効果）
以上詳述したようにこの発明によれば、超電導薄膜の生
成が可能となるといった効果を奏する。(Effects of the Invention) As detailed above, according to the present invention, it is possible to produce a superconducting thin film.
なお、この発明は前述した実施例、実験例に限られるこ
となく、その精神および範囲を逸脱しない範囲で種々の
変形例が考えられ、たとえば基体１０として線状のもの
を用い、これにこの発明にしたがって被覆してもよい。Note that the present invention is not limited to the above-described embodiments and experimental examples, and various modifications can be made without departing from the spirit and scope of the invention. It may be coated according to.
これによれば、これをコイルとして使用すれば超電導コ
イルを得ることができる。According to this, if this is used as a coil, a superconducting coil can be obtained.
また、この発明によれば、Ｉｂ族金属、Ｉａ族金属およ
び厘ａ族金属をもってそれぞれカソードとし、各カソー
ドと真空容器との間に印加するアーク電圧を、０Ｎ−Ｏ
ＦＦ制御して酸素または弗素ガス雰囲気中で、これらの
酸化物または弗化物薄膜を順次交互に層状に積層した多
層超電導薄膜（超格子薄膜または人工格子薄膜）を形成
してもよいのは勿論である。Further, according to the present invention, group Ib metals, group Ia metals, and group A metals are used as cathodes, respectively, and the arc voltage applied between each cathode and the vacuum container is 0N-O.
Of course, a multilayer superconducting thin film (superlattice thin film or artificial lattice thin film) may be formed by sequentially and alternately stacking these oxide or fluoride thin films in an oxygen or fluorine gas atmosphere under FF control. be.
第１図はこの発明の実施にあたって使用する薄膜形成装
置の一例を示す平面断面図、第２図は第１図のＡ−Ａ’
視断面図である。
１〜３：カソード、４：真空容器、１０：基体、１１：
ホルダ。FIG. 1 is a plan sectional view showing an example of a thin film forming apparatus used in carrying out the present invention, and FIG. 2 is a cross-sectional view taken along line AA' in FIG.
FIG. 1 to 3: cathode, 4: vacuum container, 10: substrate, 11:
holder.
Claims (1)
入し、前記基体またはこれを保持するホルダに負のバイ
アス電圧を印加した状態で、IIIａ族金属とIIａ族金属
と I ｂ族金属またはこれらの合金からなるカソードを
、真空アーク放電によつてエロージヨンし、前記基体表
面に薄膜を形成してなることを特徴とする超電導薄膜の
製造方法。Oxygen or fluorine gas is introduced into a vacuum container containing a substrate, and a group IIIa metal, a group IIa metal, a group Ib metal, or a group IIIa metal, a group IIa metal, a group Ib metal, or these are introduced into a vacuum container containing a substrate, and a negative bias voltage is applied to the substrate or a holder holding the substrate. 1. A method for producing a superconducting thin film, comprising: eroding a cathode made of an alloy by vacuum arc discharge to form a thin film on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096648A JPS63261625A (en) | 1987-04-20 | 1987-04-20 | Manufacture of superconductive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096648A JPS63261625A (en) | 1987-04-20 | 1987-04-20 | Manufacture of superconductive thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63261625A true JPS63261625A (en) | 1988-10-28 |
Family
ID=14170646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62096648A Pending JPS63261625A (en) | 1987-04-20 | 1987-04-20 | Manufacture of superconductive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63261625A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02255501A (en) * | 1989-03-30 | 1990-10-16 | Nippon Steel Corp | Production of oxide superconducting thin film |
-
1987
- 1987-04-20 JP JP62096648A patent/JPS63261625A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02255501A (en) * | 1989-03-30 | 1990-10-16 | Nippon Steel Corp | Production of oxide superconducting thin film |
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