JPS6326026A - Emitter coupling type logic circuit - Google Patents
Emitter coupling type logic circuitInfo
- Publication number
- JPS6326026A JPS6326026A JP16910186A JP16910186A JPS6326026A JP S6326026 A JPS6326026 A JP S6326026A JP 16910186 A JP16910186 A JP 16910186A JP 16910186 A JP16910186 A JP 16910186A JP S6326026 A JPS6326026 A JP S6326026A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- load resistor
- level shift
- load
- collectors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Logic Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はエミッタ結合型訣思回路に関し、特に5 Q
Q MHz以上の高い周波舷領域で高い電圧利得くン
を得るに好適なエミッタ結合型論理回路に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an emitter-coupled thinking circuit, and in particular, to a 5Q
The present invention relates to an emitter-coupled logic circuit suitable for obtaining a high voltage gain in a high frequency range of Q MHz or higher.
従来、この種のエミッタ結合型論理回路としては、第2
図に示すように差動増幅器をなす2個のトランジスタ1
0.11のコレクタに接続されている2個の負荷抵抗1
2.13は片側が共通で、電源よ#)順方向接続された
レベルシフト・ダイオード8.9を介して電源端子1に
接続されている回路が使用されていた。第2図において
、レベルシフト・ダイオード8.9を負荷抵抗12.1
3と電源端子1の間に挿入し、負荷抵抗12.13の共
通側電位を電源電圧よシダイオードの順方向電圧分低く
設定することで、差動対トランジスタ10.11のコレ
クタから取シ出される出力信号の次段へのレベルシフト
を行なう。Conventionally, this type of emitter-coupled logic circuit has a second
Two transistors 1 form a differential amplifier as shown in the figure.
Two load resistors connected to the collector of 0.11
2.13 uses a circuit that is common on one side and connected to the power supply terminal 1 via a forward-connected level shift diode 8.9. In Figure 2, the level shift diode 8.9 is connected to the load resistor 12.1.
3 and the power supply terminal 1, and by setting the common side potential of the load resistor 12.13 lower than the power supply voltage by the forward voltage of the diode, the voltage can be taken out from the collector of the differential pair transistor 10.11. Shifts the level of the output signal to the next stage.
次に、ダイオードを使用しないで5人カ信号を増幅し、
レベルシフトする回路例を第3図に示す。Next, amplify the five-person signal without using diodes,
An example of a circuit for level shifting is shown in FIG.
この回路は、負荷抵抗12.13の抵抗値を、所定の出
力電圧になるように、差動対トランジスタ10.11が
飽和しない範囲内で設定し、M原電圧よシその抵抗によ
る電圧降下分だけ低い直流電位の出力信号を取シ出して
いた。In this circuit, the resistance value of the load resistor 12.13 is set within a range that does not saturate the differential pair transistor 10.11 so that a predetermined output voltage is obtained, and the voltage drop due to the resistance is added to the M source voltage. However, the output signal was at a low DC potential.
上述した従来のエミッタ結合型論理回路において、電圧
利得を上げ、又レベルシフトをし:うとすると、負荷抵
抗の抵抗値を増加させれば良いが差動対トランジスタを
飽和させないためにはおのずと抵抗値の上限は制約を受
けて十分にレベルシフトを行えないし、半導体集積回路
化した場合抵抗値を大きくすると半導体基板上で抵抗面
積が増大し、浮遊容量が増し、周波数特□性を劣化させ
るという欠点がある。In the conventional emitter-coupled logic circuit described above, if you want to increase the voltage gain or shift the level, you just need to increase the resistance value of the load resistor, but in order not to saturate the differential pair transistor, the resistance value naturally increases. The upper limit of is limited and sufficient level shifting cannot be performed, and when integrated into a semiconductor circuit, increasing the resistance value increases the resistance area on the semiconductor substrate, increases stray capacitance, and deteriorates frequency characteristics. There is.
本発明の目的は、レベルシフトを確実に行えかつ周波数
特性の劣化のないエミッタ結合型論理回路を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an emitter-coupled logic circuit that can reliably perform level shifting and does not cause deterioration in frequency characteristics.
本発明の半導体集積回路は、差動増幅器を構成する2個
のトランジスタの両方のコレクタに、各々別々の負荷抵
抗とダイオードが1111方向に直列接続され、ダイオ
ードの負荷抵抗に接続された側と反対側の電極は、iI
r源に接続された構成を有しており、ダイオード1個分
レベルシフトされた出力電圧が得られるようにしたもの
である。In the semiconductor integrated circuit of the present invention, separate load resistors and diodes are connected in series in the 1111 direction to both collectors of two transistors constituting a differential amplifier, and the opposite side of the diode is connected to the load resistor. The side electrode is iI
It has a configuration in which it is connected to an r source, so that an output voltage whose level is shifted by one diode can be obtained.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は、本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.
差動対トランジスタ10及び11のコレクタと、電源端
子1との間にレベルシフト・ダイオード8と負荷抵抗1
2及びレベルシフト・ダイオード9と負荷抵抗13とが
それぞれ別々に直列に接続されている。A level shift diode 8 and a load resistor 1 are connected between the collectors of the differential pair transistors 10 and 11 and the power supply terminal 1.
2, a level shift diode 9, and a load resistor 13 are each separately connected in series.
この増幅器の実効負荷抵抗は負荷抵抗12とレベルシフ
ト・ダイオード8のもつ抵抗分の和としてとらえること
ができ、電圧利得は下記のようにして求められる。さら
に、レベルシフト・ダイオード8.9と抵抗12.13
の接続点の直流電位は電源電圧よシダイオード8.9の
順方向1圧分低く設定されているため、トランジスタ1
0.11のコレクタから出力される信号は、ダイオード
1個分レベルシフトされる。The effective load resistance of this amplifier can be taken as the sum of the resistances of the load resistor 12 and the level shift diode 8, and the voltage gain is determined as follows. Additionally, level shift diode 8.9 and resistor 12.13
The DC potential at the connection point of transistor 1 is set lower than the power supply voltage by one voltage in the forward direction of diode 8.9.
The signal output from the 0.11 collector is level shifted by one diode.
次に、この実施例の電圧利得について説明する。Next, the voltage gain of this embodiment will be explained.
第1図において、差動対トランジスタ10.11に信号
が入力され、10.11のベース電位をVBIOJBI
I、トランジスタ10.11を流れル雷流をICl0
、 ICIIとすると
ここで& kはボルツマン定数、Tは絶対温度、qけ1
M荷荷量量する。入力電圧差をΔVinとすると、式(
1)(2)より
トランジスタ10.11のコレクタから取シ出す出力電
圧をそれぞれVOIO、Voltとし、トランジスタの
ベース・エミッタ間順方向電圧をvBε、宵源宵圧をV
CC1抵抗12及び13の抵抗値をRLとすると、
Vo1o=Vcc−RLXllo −VBEIO−・−
・−・(4)”oll=vcc RLXIII V
BEll−”・・(5)出力電圧差をΔ■oとすΣと式
(4)、(5)よりΔVo=RL(11−2Ito)+
VBaxt Vngl。In FIG. 1, a signal is input to differential pair transistor 10.11, and the base potential of 10.11 is set to VBIOJBI.
I, the lightning current flowing through the transistor 10.11 ICl0
, ICII, where & k is Boltzmann's constant, T is absolute temperature, and q 1
The amount of cargo is M. If the input voltage difference is ΔVin, then the formula (
1) From (2), let the output voltages taken from the collectors of transistors 10 and 11 be VOIO and Volt, respectively, the forward voltage between the base and emitter of the transistor be vBε, and the evening pressure be V.
If the resistance value of CC1 resistors 12 and 13 is RL, then Vo1o=Vcc-RLXllo -VBEIO-・-
・-・(4)"oll=vcc RLXIII V
BEll-"...(5) Let the output voltage difference be Δ■o, Σ, and from equations (4) and (5), ΔVo=RL(11-2Ito)+
VBaxt Vngl.
ここで(3)、(3)’より
式(6)′jkΔVinで微分すると、下式(7)で示
す電圧利得が求められる。Here, by differentiating Equation (6)'jkΔVin from (3) and (3)', the voltage gain shown in Equation (7) below can be obtained.
(5)、(7) 式より、差動対トランジスタの片側
のコレクタ電流が、信号によって減少する方向に変化し
た場合、トランジスタがシリコン基板上につくられたも
のなら、ダイオードの両電極間電位差が0.7Vを割っ
た時点から、コレクタ電流の減少につれて、順方向電圧
が指数関数的に減少するため、負荷が抵抗のみの場合に
比べ、コレクタ電位は、よシ急しゅんに最高電位に到達
する。これは、ECL等の論理回路においてメリットと
なる。From equations (5) and (7), when the collector current on one side of the differential pair transistor changes in the direction of decreasing due to the signal, if the transistor is made on a silicon substrate, the potential difference between the two electrodes of the diode will be From the point when the voltage drops below 0.7V, the forward voltage decreases exponentially as the collector current decreases, so the collector potential reaches its maximum potential more quickly than when the load is only a resistor. . This is an advantage in logic circuits such as ECL.
以上説明したように、本発明は差動増幅器を成す2個の
トランジスタの両方のコレクタに、を源に順方向接続し
た各々別々のダイオードと負荷抵抗を直列に接続するこ
とで、出力信号のダイオード1個分のレベルシフトが可
能であると同時K、コレクタに接続された抵抗にダイオ
ードの抵抗分を含めて負荷抵抗としてとらえることがで
き、特に差動対トランジス声のうちの1個が入力信号に
よってしゃ断状態に近付いた場合、ダイオードの効果で
コレクタ電位が最高電位まで到達する変化率が急しゅん
でスルーレイトの実質的向上につながる。As explained above, the present invention connects in series a load resistor and a separate diode forwardly connected to the source to both collectors of two transistors constituting a differential amplifier. If the level shift of one transistor is possible at the same time, the resistance connected to the collector including the resistance of the diode can be regarded as a load resistance, and especially if one of the differential pair transistors is input signal When the voltage approaches the cut-off state, the rate of change at which the collector potential reaches its maximum potential increases rapidly due to the effect of the diode, leading to a substantial improvement in the slew rate.
又導通状態においてはレベルシフト効果を有し、しかも
抵抗値のみで本発明と同等のレベルシフトを行なう場合
に比べ、コレクタ負荷抵抗の値を小さくでき、出力イン
ピーダンスの低減、半導体基板上の抵抗面積縮少による
抵抗浮遊容量の低減効果などで周波数特性の改善がはか
れる。しかも、本発明の工εツタ結合型論理回路は線形
領域すなわち差動対トランジスタがしゃ断状態にならな
い入力信号範囲では、コレクタの出力直流レベルは従来
例の場合とほとんど同じに保つことができる。In addition, it has a level shift effect in the conductive state, and the value of the collector load resistance can be reduced compared to the case where the level shift equivalent to the present invention is performed using only the resistance value, reducing the output impedance and reducing the resistance area on the semiconductor substrate. Frequency characteristics can be improved due to the effect of reducing stray capacitance due to the reduction in resistance. Moreover, in the linear region, that is, in the input signal range in which the differential pair transistors are not cut off, the ε-tooth coupled logic circuit of the present invention can maintain the output DC level of the collector almost the same as in the conventional example.
第1図は本発明の一実施例の回路図、第2図。
第3図はそれぞれ従来例の回路図である。
1・・・・・・電源端子、2・・・・・・接地端子、3
・・・・・・定電流源、4.5・・・・・・入力端子、
6.7・・・・・・出力端子、8.9・・・・・・レベ
ルシフト・ダイオード、12.13・・・・・・負荷抵
抗、14・・・・・・バイパスコンデンサ。
−・−゛。
代理人 弁理士 内 原 白 i、’+ 、、、
+’、−,’f=2fEJ
茅3記FIG. 1 is a circuit diagram of an embodiment of the present invention, and FIG. 2 is a circuit diagram of an embodiment of the present invention. FIG. 3 is a circuit diagram of a conventional example. 1...Power terminal, 2...Ground terminal, 3
... Constant current source, 4.5 ... Input terminal,
6.7... Output terminal, 8.9... Level shift diode, 12.13... Load resistance, 14... Bypass capacitor. −・−゛. Agent Patent Attorney Haku Uchihara i,'+ ,,,
+', -,'f=2fEJ Kaya 3ki
Claims (1)
て電源電圧をそれぞれコレクタに供給される一対のトラ
ンジスタからなることを特徴とするエミッタ結合型論理
回路。An emitter-coupled logic circuit characterized by consisting of a pair of transistors whose collectors each receive a power supply voltage through a series circuit of a level shift diode and a load resistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16910186A JPS6326026A (en) | 1986-07-17 | 1986-07-17 | Emitter coupling type logic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16910186A JPS6326026A (en) | 1986-07-17 | 1986-07-17 | Emitter coupling type logic circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6326026A true JPS6326026A (en) | 1988-02-03 |
Family
ID=15880326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16910186A Pending JPS6326026A (en) | 1986-07-17 | 1986-07-17 | Emitter coupling type logic circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6326026A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022595U (en) * | 1973-06-23 | 1975-03-13 | ||
JPS5098765A (en) * | 1973-12-26 | 1975-08-06 | ||
JPS54953A (en) * | 1977-06-06 | 1979-01-06 | Mitsubishi Electric Corp | Differential amplifying circuit |
JPS57176839A (en) * | 1981-04-01 | 1982-10-30 | Rca Corp | Switching circuit |
-
1986
- 1986-07-17 JP JP16910186A patent/JPS6326026A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022595U (en) * | 1973-06-23 | 1975-03-13 | ||
JPS5098765A (en) * | 1973-12-26 | 1975-08-06 | ||
JPS54953A (en) * | 1977-06-06 | 1979-01-06 | Mitsubishi Electric Corp | Differential amplifying circuit |
JPS57176839A (en) * | 1981-04-01 | 1982-10-30 | Rca Corp | Switching circuit |
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