JPS63257257A - Ultrahigh-speed semiconductor device - Google Patents

Abstract

PURPOSE:To increase the response speed and the operating speed by a method wherein an electrode and a wiring layer of an ultrahigh-speed semiconductor device are composed of an oxide superconductor and the delay time in signal propagation is eliminated. CONSTITUTION:Connection wires 3 between electrodes and elements, operating parts 4 and insulating parts 2 are composed of a metal oxide which can become an oxide superconductor(e.g., La-Sr-Cu-O-related material). In this case, if the composition of the metal oxide is adjusted, a superconductor, a semiconductor and an insulator can be formed. Then, the electrical resistance becomes substantially zero and the delay time becomes zero. By this setup, the delay time in signal propagation is eliminated and the response speed and the operating speed are increased.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an ultra-high speed semiconductor device required for information and communication technology.

(Conventional technology and its problems) In conventional electronic integrated circuits, materials with finite electrical resistance, such as aluminum, were used as materials for electrodes and wiring layers. Time constant τ-RC (R: resistance of electrode or wiring layer,
C: The capacitance of the electrode or wiring layer is large, which causes a delay in signal propagation, resulting in a disadvantage that the operation speed of the device becomes slow.

Furthermore, it is well known that in order to operate a semiconductor device at high speed, it is effective to shorten the gate length of a field effect transistor formed therein. As transistors become more elongated in the transverse direction to the length of the channel, and electrodes and wiring layers also become elongated, their electrical resistance increases, and their time constant increases accordingly, resulting in longer signal propagation times. There was a problem.

Furthermore, the integrated circuit obtained in this way is two-dimensionally integrated, and can only be used for expansion within one plane. This has the drawbacks of increased wire connection and longer wire connections.

[Means for solving problems]

In order to solve the above-mentioned problems, this invention consists of a metal oxide that can become an oxide superconductor, and by adjusting its composition, a superconducting semiconductor and an insulator are formed, and the superconductor is used to form a superconducting semiconductor and an insulator. The structure is such that connections are formed, the insulator is interposed between layers or elements, and the semiconductor is used as an operating part.

〔Example〕

In the illustrated embodiment, a three-dimensional integrated circuit device is constructed by forming an insulating section 2 between a plurality of active layers 1.

This device consists of electrodes, connections 3 between elements, and an operating section 4 including active elements.

Wire connection 3 between the electrodes and elements, operating section 4 and insulating section 2
Both use metal oxides (for example, La-Sr-Cu-0 series) that can become oxide superconductors. In this case, superconductors, semiconductors, and insulators are produced by adjusting the composition of the metal oxide to the Uf4 node.

For example, as a metal oxide (La+-x srx )
When using zCub4, when 0.075≦x<0.3, superconductor 0.3≦a
<0.5, it becomes a semiconductor; when 0.5≦X, it becomes an insulator.

Therefore, a superconductor having the above composition is used for the connection 3 between the electrodes and the elements, a semiconductor having the above composition is used for the operating section 4, and an insulator having the above composition is used for the insulating section 2.

Note that as the semiconductor of the operating section 4, in addition to the semiconductor having the above composition, a normal semiconductor can also be used.

〔Effect of the invention〕

Since the ultra-high speed semiconductor device according to the present invention uses an oxide superconductor for electrodes and wiring layers, its electrical resistance becomes substantially zero and the delay time (time constant) becomes zero. Therefore, delay time in signal propagation is eliminated, and response speed and operation speed are increased. In addition, the critical temperature is relatively high, and a superconducting state can be achieved with little or no cooling, allowing semiconductor devices to operate at high speed.

Furthermore, since it has a three-dimensional laminated structure, it can be highly integrated and compact, so time delays due to wiring are reduced and faster operation can be achieved.

[Brief explanation of the drawing]

The drawing is a perspective view of the embodiment. 1... Operating layer, 2... Insulating section, 3...
... Connection between electrodes and elements, 4 ... Operating section.

Claims (2)

[Claims] (1) Consisting of metal oxides that can become oxide superconductors,
By adjusting the composition, a superconducting semiconductor and an insulator are formed, the superconductor forms electrodes and inter-element connections, the insulator is interposed between layers or elements, and the semiconductor is used as an operating part. An ultra-high-speed semiconductor device featuring: (2) As the above metal oxide, La-Sr-Cu-O
The ultra-high-speed semiconductor device according to claim 1, characterized in that the ultra-high-speed semiconductor device uses an ultra-high-speed semiconductor device.