JPS63252272A - Superconductive quantum interferometer - Google Patents
Superconductive quantum interferometerInfo
- Publication number
- JPS63252272A JPS63252272A JP62086266A JP8626687A JPS63252272A JP S63252272 A JPS63252272 A JP S63252272A JP 62086266 A JP62086266 A JP 62086266A JP 8626687 A JP8626687 A JP 8626687A JP S63252272 A JPS63252272 A JP S63252272A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting quantum
- oxide
- quantum interferometer
- josephson junction
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000002887 superconductor Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 4
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
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- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
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- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
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Landscapes
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、酸化物超伝導材料を用いた超伝導量子干渉計
に関するものであり、従来の超伝導量子干渉計よりも高
い温度で動作が可能な素子に関するものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a superconducting quantum interferometer using an oxide superconducting material, which can operate at a higher temperature than conventional superconducting quantum interferometers. Regarding possible elements.
（従来技術と問題点）
従来の超伝導量子干渉計は、 ｐｂ金合金Ｎｂあるいは
Ｎｂ化合物を超伝導材料として用いている。(Prior art and problems) Conventional superconducting quantum interferometers use pb-gold alloy Nb or Nb compounds as superconducting materials.
従来から用いられてきたこれらの超伝導材−料は。These superconducting materials have been used for a long time.
超伝導転移温度が、高々２０に以下であり、液体［（ｅ
を用いて冷却しなければ動作できないものである。その
ため以下のような問題点があった。The superconducting transition temperature is at most 20°C or less, and the liquid [(e
It cannot operate unless it is cooled using a As a result, there were the following problems.
■ Ｈｅは、高価な資源であるだけでなく、液化するの
に特殊な装置を必要とする。また、液化には大電力を要
する。このため、超伝導量子干渉計を用いた計測は、膨
大な運転コストを必要としていた。■ He is not only an expensive resource, but also requires special equipment to liquefy. Also, liquefaction requires a large amount of electricity. For this reason, measurements using superconducting quantum interferometers require enormous operating costs.
■ 液体Ｈｅは、熱容量が極めて小さく、冷却能力が小
さいだけでな（、蓄えるのに２重の魔法瓶構造、或はそ
れに匹敵する断熱層を有するコンテナが必要となる。こ
のため、超伝導量子干渉計を用いた計測は、コンテナの
中に測定試料を持ち込むことができない場合には、断熱
層を界して行わねばならず超伝導量子干渉計の持つ性能
に対して測定精度が著しく低下していた。■ Liquid He has an extremely small heat capacity and a small cooling capacity (to store it, it requires a double thermos structure or a container with an equivalent insulation layer. For this reason, superconducting quantum interference If it is not possible to bring the sample to be measured into a container, measurements using a superconducting quantum interferometer must be carried out across a heat insulating layer, which significantly reduces measurement accuracy compared to the performance of a superconducting quantum interferometer. Ta.
■ 液体Ｈｅを用いるため、システムが大型になり、移
動が困難である。このため測定対象としては、移動でき
るものに限られる。- Since liquid He is used, the system is large and difficult to move. Therefore, the objects to be measured are limited to those that can be moved.
■ 従来から用いられてきた超伝導体は、ギャップ電圧
が小さい。このため従来の超伝導量子干渉計は、出力電
圧がたかだか１００μＶ程度と低く、磁束分解能が１０
−４φ。／−’Ｈｚ程度に制限されていた。■ Conventionally used superconductors have a small gap voltage. For this reason, conventional superconducting quantum interferometers have a low output voltage of around 100 μV at most, and a magnetic flux resolution of 10 μV.
-4φ. /-'Hz.
■ 液体Ｈｅ温度で動作する初段増幅素子がないために
、超伝導量子干渉計で検出した信号を増幅器に伝達する
信号ケーブルが長くなり、雑音がカップルする確率が高
くなり、磁束分解能がさらに低下していた。■ Because there is no first-stage amplification element that operates at the temperature of liquid He, the signal cable that transmits the signal detected by the superconducting quantum interferometer to the amplifier becomes longer, increasing the probability of noise coupling and further reducing magnetic flux resolution. was.
（問題点を解決するための手段）
本発明は、上述の欠点を改善するために基本となるジョ
セフソン接合の電極材料に高い超伝導転移温度（Ｔｃ）
を有する酸化物超伝導体を用いる。(Means for Solving the Problems) In order to improve the above-mentioned drawbacks, the present invention provides a high superconducting transition temperature (Tc) for the basic Josephson junction electrode material.
An oxide superconductor having the following properties is used.
これにより、２０に以上の温度で動作する超伝導量子干
渉計を提供する。This provides a superconducting quantum interferometer that operates at temperatures above 20°C.
（作用）
本発明では、ジョセフソン接合の電極材料に高い超伝導
転移温度（Ｔｃ）を有する酸化物超伝導体ヲ用い、ジョ
セフソン接合のトンネルバリア。(Function) In the present invention, an oxide superconductor having a high superconducting transition temperature (Tc) is used as the electrode material of the Josephson junction to form a tunnel barrier of the Josephson junction.
あるいは絶縁層内のミクロな導通部にジョセフソン電流
が流れる。よって、従来の素子に比較して高い温度での
動作が可能である。Ｔｃが２０に以上の酸化物超伝導体
を用いた場合には、 Ｈｅガスを用いた小型冷凍器の使
用が可能となる。Ｔｃが８０に以上の酸化物超伝導体を
用いた場合には。Alternatively, a Josephson current flows through microscopic conductive parts within an insulating layer. Therefore, it is possible to operate at a higher temperature than conventional elements. When an oxide superconductor with a Tc of 20 or more is used, it becomes possible to use a small refrigerator using He gas. When an oxide superconductor with Tc of 80 or more is used.
液体窒素等による冷却が可能となる。ジョセフソン接合
の絶縁層に、■属金属の酸化物或は■属金属と銅の複合
酸化物を用いた場合いには。Cooling using liquid nitrogen or the like becomes possible. When an oxide of a group metal or a composite oxide of a group metal and copper is used for the insulating layer of the Josephson junction.
酸化物超伝導材料と結晶構造・格子定数がほとんど同一
にできるため、ジョセフソン接合の下地電極から対局電
極までの多層薄膜をエピタキシャルに成長させることが
可能であり、対向電極の初期堆積層の高品質化が図れ、
超伝導量子干渉計の動作温度が更に上がる。Since the crystal structure and lattice constant can be made almost the same as those of oxide superconducting materials, it is possible to epitaxially grow a multilayer thin film from the base electrode of the Josephson junction to the counter electrode, and the height of the initial deposited layer of the counter electrode can be increased. Improve quality,
The operating temperature of superconducting quantum interferometers will further rise.
第１図は、超伝導量子干渉計の断面図であって、２はジ
ョセフソン接合の下地電極、３は超伝導量子干渉計リン
グ、４はジョセフソン接合の対向電極、５はトンネルバ
リア又は絶縁層である。２の下地電極は３の超伝導量子
干渉針リングの一端をなす。第２図は本発明の超伝導量
子干渉計の概略斜視図であり、第１図と同一部分に同一
番号を付す。２および３の下地電極。FIG. 1 is a cross-sectional view of a superconducting quantum interferometer, in which 2 is the base electrode of a Josephson junction, 3 is a superconducting quantum interferometer ring, 4 is a counter electrode of the Josephson junction, and 5 is a tunnel barrier or insulator. It is a layer. The base electrode 2 forms one end of the superconducting quantum interference needle ring 3. FIG. 2 is a schematic perspective view of the superconducting quantum interferometer of the present invention, and the same parts as in FIG. 1 are given the same numbers. Base electrodes 2 and 3.
対抗電極として（Ｍ１１−Ｘｌ’１２Ｘ） ｖｃｕｏｚ
（０＜Ｘ＜１．１≦Ｙ≦２．２≦Ｚ≦４、Ｍｌは■族
金属（Ｓｃ。As a counter electrode (M11-Xl'12X) vcuoz
(0<X<1.1≦Y≦2.2≦Z≦4, Ml is a group II metal (Sc.
Ｙ、Ｌａ＋Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ＋Ｙｂ、Ｌｕ、Ｂ、
Ａｌ、Ｇａ、 Ｉｎ、ＴＩＪｓ）、Ｍ２は■族金属（Ｂ
ｅ＋Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｚｎ、Ｃｄ、ｌ（ｇ＋ｃ
ｆ））の中から選ばれた酸化物超伝導材料を用いる。Y, La+Ce, Pr, Nd, Pm+Yb, Lu, B,
Al, Ga, In, TIJs), M2 is group II metal (B
e+Mg, Ca, Sr, Ba, Zn, Cd, l(g+c
f) Use an oxide superconducting material selected from the following.
これら酸化物超伝導材料は、２０に以上の温度で完全に
超伝導状態に転移するため、２０に以上の温度で超伝導
量子干渉計を動作させることができる。また、トンネル
バリアあるいは絶縁層５に、■属金属の酸化物または、
■属金属と銅の複合酸化物を用いれば、これらは緻密で
均質な極薄膜を容易に形成できるため、ジョセフソン接
合の品質を良好にすることができるだけでなく、ジョセ
フソン接合の特性の制御も容易になる。しかも、■属金
属と銅の複合酸化物を用いれば、酸化物超伝導材料と結
晶構造・格子定数がほとんど同一にできるため、ジョセ
フソン接合の下地電極から対向電極までの多層薄膜をエ
ピタキシャルに成長させることが可能であり。These oxide superconducting materials completely transition to a superconducting state at a temperature of 20° C. or higher, so that a superconducting quantum interferometer can be operated at a temperature of 20° C. or higher. In addition, the tunnel barrier or insulating layer 5 may be made of an oxide of a group metal or
■By using composite oxides of metals and copper, it is possible to easily form dense, homogeneous, ultra-thin films, which not only improves the quality of Josephson junctions but also controls the characteristics of Josephson junctions. It also becomes easier. Moreover, if a composite oxide of group metal and copper is used, the crystal structure and lattice constant can be made almost the same as those of the oxide superconducting material, so a multilayer thin film from the base electrode to the counter electrode of the Josephson junction can be epitaxially grown. It is possible to do so.
対向電極の初期堆積層の高品質化が図れ、動作温度がさ
らに上がる。The quality of the initial deposited layer of the counter electrode can be improved, and the operating temperature can be further increased.
これらの高温動作超伝導量子干渉計は、小型冷凍機の使
用が可能であるため、運転コストが従来型の超伝導量子
干渉計に比べて格段に低くなるだけでな（、システムの
小型化ができるために、システムの移動・設置が容易に
なるため。These high-temperature-operating superconducting quantum interferometers are capable of using small refrigerators, making their operating costs much lower than conventional superconducting quantum interferometers (and allowing system miniaturization). This makes it easier to move and install the system.
測定対象が飛躍的に増加する。また、液体Ｈｅを用いな
いため、超伝導量子干渉計と外部との間の断熱層は薄く
出来る。このため、超伝導量子干渉針の性能を生かした
計測が容易になる。The number of measurement targets will increase dramatically. Furthermore, since liquid He is not used, the heat insulating layer between the superconducting quantum interferometer and the outside can be made thin. This facilitates measurements that take advantage of the performance of the superconducting quantum interference needle.
本発明では９以上の効果により、高性能の高温動作超伝
導量子干渉計を提供することが出来る。The present invention has nine or more effects, making it possible to provide a high-performance, high-temperature-operating superconducting quantum interferometer.
（実施例）
〔実施例１〕
酸化物超伝導体と格子整合が可能な酸化物絶縁体基板を
用意して、酸化物超伝導体を電極とし、■属金属の酸化
物をトンネルバリアとする超伝導量子干渉計を作製した
。(Example) [Example 1] An oxide insulator substrate capable of lattice matching with an oxide superconductor is prepared, the oxide superconductor is used as an electrode, and the oxide of a group metal is used as a tunnel barrier. We created a superconducting quantum interferometer.
すなわち、予めジぢセフソン接合の下地電極および超伝
導量子干渉計リングをバターニングするためのレジスト
ステンシル（ＡＺ １４７０）をその上に形成したＬａ
ｚＣｕ０４の多結晶絶縁性基板上に、 （Ｌａｏ、Ｊａ
ｏ、＋）ｚｃｕ０４ターゲット（１００ｍｍφ。That is, a resist stencil (AZ 1470) for patterning the base electrode of the Jisefson junction and the superconducting quantum interferometer ring was formed in advance on the La.
On a polycrystalline insulating substrate of zCu04, (Lao, Ja
o, +)zcu04 target (100mmφ.
５ｍｍ厚）を用いて、 ５Ｐａの計ガス中で５００Ｈの
電力を印加して、 ｒｆマグネトロンスパッタリングに
より、水冷基板上に下地電極用（Ｌａ０．９Ｂａｎ、
＋） ｚｃｕ０４酸化物超伝導薄膜を２００ｎｍの厚さ
に形成した。つぎに、アセトン中でレジストを溶解して
不用な部分の薄膜を除去して下地電極のパターンを形成
した。つぎに、ジョセフソン接合の対向電極をバターニ
ングするためのレジストステンシルをＡＺ １４７０フ
オトレジストにより形成した。つぎに、 Ｌａターゲッ
ト（１００ｍｍφ＋２ｍｍ厚）を用いて、 ｄｃマグネ
トロンスパッタリング（Ａｒガス圧３Ｐａ、スパッタ電
流０．１Ａ）により、 ３ｎｍのＬａ極薄膜を形成した
。引続き、同一真空中で酸素を２００Ｐａ導入して３０
分間の自然酸化を行って、トンネルバリアを形成した。A base electrode (La0.9 Ban,
+) A zcu04 oxide superconducting thin film was formed to a thickness of 200 nm. Next, the resist was dissolved in acetone and unnecessary portions of the thin film were removed to form a base electrode pattern. Next, a resist stencil for patterning the counter electrode of the Josephson junction was formed using AZ 1470 photoresist. Next, an extremely thin La film of 3 nm was formed by dc magnetron sputtering (Ar gas pressure of 3 Pa, sputtering current of 0.1 A) using a La target (100 mm in diameter + 2 mm in thickness). Subsequently, oxygen was introduced at 200 Pa in the same vacuum and the temperature was increased to 30
A tunnel barrier was formed by natural oxidation for 1 minute.
最後に、対向電極（Ｌａｏ、 Ｊａｏ、 ＋）ｚｃｕＯ
ａ酸化物超伝導薄膜を下地電極と同一の条件で３００ｎ
ｍの厚さに形成して、ナセトン中でレジストを溶解して
、対向電極をバターニングし、超伝導量子干渉計の作製
を終った。Finally, the counter electrode (Lao, Jao, +)
a The oxide superconducting thin film was heated for 300n under the same conditions as the base electrode.
The resist was formed to a thickness of m, the resist was dissolved in Nasetone, and the counter electrode was buttered to complete the fabrication of the superconducting quantum interferometer.
この超伝導量子干渉計を小型冷凍器を用いて。This superconducting quantum interferometer uses a small refrigerator.
冷却し動作温度を調べたところ、２５に以下の温度で磁
気応答特性を示す高温動作超伝導量子干渉計であること
が確認できた。When it was cooled and its operating temperature was examined, it was confirmed that it is a high-temperature operating superconducting quantum interferometer that exhibits magnetic response characteristics at temperatures below 25 degrees.
〔実施例２〕
（ＺｒＯ） ｏ、 ｓ （ＳｒＯ） ｏ、 ｓ基板（ラ
ンダム配向）を用意して、下地電極、超伝導量子干渉計
リング。[Example 2] A (ZrO) o, s (SrO) o, s substrate (random orientation) was prepared, and a base electrode and a superconducting quantum interferometer ring were formed.
及び対向電極が（Ｙｏ、 ａＳｒｏ、 ｂ）Ｃｕ０３酸
化物超伝導薄膜で構成され、下地電極と対向電極との間
の絶縁層が、 ＹＣｕＯｓで構成され、 ＹＣｕＯｚ絶
縁層内に絶縁破壊に依って形成されたミクロな導通部に
ジョセフソン電流が流れるジョセフソン接合を基本素子
とする超伝導量子干渉計を作製した。and the counter electrode are composed of (Yo, aSro, b) Cu03 oxide superconducting thin film, and the insulating layer between the base electrode and the counter electrode is composed of YCuOs, and is formed by dielectric breakdown within the YCuOz insulating layer. We fabricated a superconducting quantum interferometer whose basic element is a Josephson junction, in which a Josephson current flows through the microscopic conductive parts.
すなわち、まず基板上にＡＺ１４７０フォトレジストを
用いて、下地電極および超伝導量子干渉計リングをバタ
ーニングするためのレジストステンシルを形成し、 （
Ｙｏ、ａＳｒｏ、’ａ）ＣｕＯｓターゲッ） （１００
ｍｍφ、 ３ｍｍ厚）を用いて、 ２００ｎｍの酸化物
超伝導薄膜をｒｆマグネトロンスパッタリングにより形
成（Ａｒガス圧１０Ｐａ、 ｒｆ電力４００Ｗ）シ、ア
セトン中でリフトオフして、下地電極及び超伝導量子干
渉計リング薄膜をバターニングした。続いて、対向電極
をバターニングするためのレジストステンシルをＡＺ１
４７０フォトレジストにより形成した。つぎに、 ＹＣ
ｕＯｚ絶縁層をＹＣｕＯｓターゲット（７５ｍｍφ、２
關厚）を用いて、 ２Ｏｎ信の厚さにｒｆマグネトロン
スパッタリングにより形成（Ａｒガス圧８Ｐａ、 ｒｆ
電力１００−）シ、同−真空中で対向電極薄膜を下地電
極と同一の条件で３００ｎｍの厚さに形成し、アセトン
中でリフトオフして、パターニングした。That is, first, a resist stencil was formed on the substrate using AZ1470 photoresist for patterning the base electrode and the superconducting quantum interferometer ring, and (
Yo, aSro,'a)CuOs target) (100
A 200 nm oxide superconducting thin film was formed by RF magnetron sputtering (Ar gas pressure 10 Pa, RF power 400 W), and lifted off in acetone to form a base electrode and a superconducting quantum interferometer ring. The thin film was buttered. Next, a resist stencil for patterning the counter electrode was applied to AZ1.
470 photoresist. Next, YC
The uOz insulating layer was formed using a YCuOs target (75 mmφ, 2
Formed by RF magnetron sputtering (Ar gas pressure 8 Pa, RF
A counter electrode thin film was formed to a thickness of 300 nm in a vacuum under the same conditions as the base electrode, and was patterned by lift-off in acetone.
最後に、基板を３０Ｋまで冷却した後、下地電極と対向
電極との間に、 １０Ｖ＋ １０ｍ５ｅｃのパルス電圧
を５回印加して、ミクロな導通部を形成し。Finally, after cooling the substrate to 30K, a pulse voltage of 10V+10m5ec was applied five times between the base electrode and the counter electrode to form a microscopic conductive part.
超伝導量子干渉計の作製を終った。この超伝導量子干渉
計は、 ３０Ｋにおいても磁気応答を示す高温動作超伝
導量子干渉計であった。Finished creating a superconducting quantum interferometer. This superconducting quantum interferometer was a high-temperature operating superconducting quantum interferometer that exhibited magnetic response even at 30K.
〔実施例３〕
（ＺｒＯｚ） ｏ、 ｂｓ （ＳｒＯ） ｏ、 ３ｓの
（１００）面単結晶基板を用意して、下地電極および超
伝導量子干渉計リングをパターニングするためのリフト
オフステンシルをＡＺ１４７０フォトレジストにより形
成し、 （Ｍｏ、ｔＳｒｏ、＋）＋、＋ＣｕＯ＋（Ｍ
： Ｓｃ、Ｙ＋Ｌａ、Ｃｅ＋Ｐｒ＋Ｎｄ、Ｐｍ、Ｙｂ
、Ｌｕ、Ｂ、Ａｌ、Ｇａ、 Ｉｎ、Ｔｌ、ＢＳ）を蒸着
原料として真空蒸着により、酸化物超伝導薄膜を２００
ｎｍの厚さに堆積し、アセトン中でリフトオフしてパタ
ーニングした。つぎに、対向電極をパターニングするた
めのリフトオフステンシルをＡＺＩ４７０レジストによ
り形成し９ＭｔＯｚ （Ｍ ： Ｓｃ＋Ｙ＋Ｌａ、 Ｃ
ｅ、 Ｐｒ、 Ｎｄ、 Ｐｍ、 Ｙｂ、 Ｌｕ＋ Ｂ＋
Ａ１． Ｇａ＋ Ｉｎ、 Ｔｌ、 Ｅｓ）を蒸着原料
として、トンネルバリア用絶縁極薄膜を３ｎｍの厚さに
形成し、しかる後、同一真空中で。[Example 3] A (100) plane single crystal substrate of (ZrOz) o, bs (SrO) o, 3s was prepared, and a lift-off stencil for patterning the base electrode and superconducting quantum interferometer ring was coated with AZ1470 photoresist. (Mo, tSro, +)+, +CuO+(M
: Sc, Y+La, Ce+Pr+Nd, Pm, Yb
, Lu, B, Al, Ga, In, Tl, BS) as vapor deposition raw materials to form an oxide superconducting thin film of 200% by vacuum evaporation.
It was deposited to a thickness of nm and patterned by lift-off in acetone. Next, a lift-off stencil for patterning the counter electrode was formed using AZI470 resist, and 9MtOz (M: Sc+Y+La, C
e, Pr, Nd, Pm, Yb, Lu+ B+
A1. An ultra-thin insulating film for a tunnel barrier was formed to a thickness of 3 nm using Ga+In, Tl, Es) as a vapor deposition raw material, and then in the same vacuum.
下地電極と同一条件で対向電極酸化物超伝導薄膜を３５
０ｎｍの厚さに堆積して、アセトン中でリフトオフして
、パターニングして超伝導量子干渉計の作製を終った。The counter electrode oxide superconducting thin film was deposited under the same conditions as the base electrode.
It was deposited to a thickness of 0 nm, lifted off in acetone, and patterned to complete the fabrication of a superconducting quantum interferometer.
表−１に、これらの超伝導量子干渉計の特性を示す。表
に示す様に、全ての超伝導量子干渉計は、２０に以上の
温度で動作した。Table 1 shows the characteristics of these superconducting quantum interferometers. As shown in the table, all superconducting quantum interferometers operated at temperatures above 20°C.
（以下余白）
表−ＩＩＩＩ属金属含金属た場合の超伝導量子干渉計の
特性
〔実施例４〕
（ＺｒＯｚ）ｏ、ａｓ（ＭＯｘ）ｏ、ｓｓのランダム配
向基板（Ｍ： Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｚｎ、
Ｃｄ、Ｈｇ、Ｃｆ）を用意して。(Leaving space below) Table - Characteristics of superconducting quantum interferometer when using group III metals [Example 4] (ZrOz)o, as(MOx)o, ss randomly oriented substrate (M: Be, Mg, Ca , Sr, Ba, Zn,
Prepare Cd, Hg, Cf).
下地電極および超伝導量子干渉計リングをパターニング
するためのリフトオフステンシルをＡｚ１４７０フォト
レジストにより形成し、 （Ｙｏ、 ７Ｍ。。A lift-off stencil for patterning the base electrode and superconducting quantum interferometer ring was formed using Az1470 photoresist (Yo, 7M).
３）１．３ｃＬｌｏ、 （Ｍ ： Ｂｅ、Ｍｇ、Ｃａ、
Ｓｒ、Ｂａ、Ｚｎ、Ｃｄ、Ｈｇ、Ｃｆ）を蒸着原料とし
て真空蒸着により、酸化物超伝導薄膜を２００ｎｗ＋の
厚さに堆積し、アセトン中でリフトオフしてパターニン
グした。つぎに、対向電極をパターニングするためのリ
フトオフステンシルをＡＺ１４７０レジストにより形成
し、Ｙ、。3) 1.3cLlo, (M: Be, Mg, Ca,
An oxide superconducting thin film was deposited to a thickness of 200 nw+ by vacuum evaporation using Sr, Ba, Zn, Cd, Hg, Cf) as evaporation raw materials, and was patterned by lift-off in acetone. Next, a lift-off stencil for patterning the counter electrode was formed using AZ1470 resist.
３Ｃｕ０３絶縁層をＹ、、３Ｃｕ０３ターゲツト（７５
ｍｍφ。3Cu03 insulating layer with Y, 3Cu03 target (75
mmφ.
２ａ＋ｍ厚）を用いて、 ２０ｎａ＋の厚さにｒｆマグ
ネトロンスパッタリングにより形成（Ａｒガス圧８Ｐａ
。2a+m thick), and formed by RF magnetron sputtering to a thickness of 20na+ (Ar gas pressure 8Pa).
.
ｒｆ電力１００Ｗ ） Ｌ、同一真空中で対向電極薄膜
を下地電極と同一の条件で３００ｎｍの厚さに形成し、
アセトン中でリフトオフして、パターニングした。rf power 100W) L, in the same vacuum, a counter electrode thin film was formed to a thickness of 300 nm under the same conditions as the base electrode,
It was lifted off in acetone and patterned.
最後に、基板を３０Ｋまで冷却した後、下地電極と対向
電極との間に、 ＩＯＶ、 １０ｍ５ｅｃのパルス電圧
を５回印加して、ミクロな導通部を形成し。Finally, after cooling the substrate to 30K, a pulse voltage of IOV, 10m5ec was applied five times between the base electrode and the counter electrode to form a microscopic conductive part.
作製を終った。これらの超伝導量子干渉計の性能を表−
２に示す。表から明らかなように１作製した超伝導量子
干渉計は全て高性能の高温動作超伝導量子干渉計であっ
た。Finished making it. The performance of these superconducting quantum interferometers is shown below.
Shown in 2. As is clear from the table, all of the fabricated superconducting quantum interferometers were high-performance, high-temperature operating superconducting quantum interferometers.
表−２■属金属を変えた場合の超伝導量子干渉計の特性
（発明の効果）
以上説明したように９本発明のジョセフソン接合を基本
素子とする超伝導量子干渉計は、基本となるジョセフソ
ン接合の電極材料に高い超伝導転移温度を有する酸化物
超伝導体を用い。Table 2 ■Characteristics of superconducting quantum interferometer when changing metals (effects of the invention) As explained above, the superconducting quantum interferometer using the Josephson junction of the present invention as a basic element has the following basic elements: An oxide superconductor with a high superconducting transition temperature is used as the electrode material for the Josephson junction.
ジョセフソン接合のトンネルバリア、あるいは絶縁層内
のミクロな導通部にジョセフソン電流が流れるジョセフ
ソン接合の絶縁層に、■属金属の酸化物或は■属金属と
銅の複合酸化物を用いることにより、高性能の高温動作
超伝導量子干渉計を提供することが出来る。Use of an oxide of a group metal or a composite oxide of a group metal and copper for the tunnel barrier of a Josephson junction or the insulating layer of a Josephson junction in which a Josephson current flows through microscopic conductive parts within the insulating layer. This makes it possible to provide a high-performance, high-temperature-operating superconducting quantum interferometer.
第１図は２本発明の超伝導量子干渉計の概念断面図、第
２図は概略斜視図を示す。
１ ・・・ 基板
２ ・・・ 下地電極
３ ・・・ 超伝導量子干渉計リング
４ ・・・ 対向電極FIG. 1 is a conceptual sectional view of a superconducting quantum interferometer according to the present invention, and FIG. 2 is a schematic perspective view. 1...Substrate 2...Base electrode 3...Superconducting quantum interferometer ring 4...Counter electrode
Claims (4)
グと、該リングの一部に形成されたジョセフソン接合か
らなる超伝導量子干渉計において、ジョセフソン接合の
下地電極をかねる前記リングおよび対向電極が酸化物超
伝導体からなることを特徴とする超伝導量子干渉計。(1) In a superconducting quantum interferometer consisting of a superconducting quantum interferometer ring formed of a superconductor and a Josephson junction formed in a part of the ring, the ring serving as a base electrode of the Josephson junction and A superconducting quantum interferometer characterized in that a counter electrode is made of an oxide superconductor.
＿ＹＣｕＯ＿Ｚ（０＜Ｘ＜１、１≦Ｙ≦２、２≦Ｚ≦４
、Ｍ１はIII族金属（Ｓｃ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎ
ｄ、Ｐｍ、Ｙｂ、Ｌｕ、Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｔｉ、
Ｅｓ）、Ｍ２はII族金属（Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂ
ａ、Ｚｎ、Ｃｄ、Ｈｇ、Ｃｆ））の中から選ばれた一つ
であることを特徴とする特許請求の範囲第１項記載の超
伝導量子干渉計。(2) The oxide superconductor is (M1_1_−_XM2_X)
_YCuO_Z(0<X<1, 1≦Y≦2, 2≦Z≦4
, M1 is a group III metal (Sc, Y, La, Ce, Pr, N
d, Pm, Yb, Lu, B, Al, Ga, In, Ti,
Es), M2 is a group II metal (Be, Mg, Ca, Sr, B
2. The superconducting quantum interferometer according to claim 1, wherein the superconducting quantum interferometer is one selected from a, Zn, Cd, Hg, Cf).
化物あるいはＭ１−Ｃｕ系酸化物（ここでＭ１はIII属
金属（Ｓｃ、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｙｂ
、Ｌｕ、Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｔｌ、Ｅｓ）の中から
選ばれた一種）であることを特徴とする特許請求の範囲
第１項又は第２項記載の超伝導量子干渉計。(3) The tunnel barrier of the Josephson junction is made of M1 oxide or M1-Cu oxide (where M1 is a group III metal (Sc, Y, La, Ce, Pr, Nd, Pm, Yb).
, Lu, B, Al, Ga, In, Tl, Es).
はＭ１−Ｃｕ系酸化物（ここでＭ１はIII属金属（Ｓｃ
、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｙｂ、Ｌｕ、Ｂ
、Ａｌ、Ｇａ、Ｉｎ、Ｔｌ、Ｅｓ）の中から選ばれた一
種）からなり、該絶縁層中に、絶縁破壊により形成され
たミクロな導通部が形成されていることを特徴とする特
許請求の範囲第１項又は第２項記載の超伝導量子干渉計
。(4) The insulating layer of the Josephson junction is made of M1 oxide or M1-Cu-based oxide (here, M1 is a group III metal (Sc
, Y, La, Ce, Pr, Nd, Pm, Yb, Lu, B
, Al, Ga, In, Tl, Es), and a micro conductive portion formed by dielectric breakdown is formed in the insulating layer. A superconducting quantum interferometer according to item 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62086266A JPS63252272A (en) | 1987-04-08 | 1987-04-08 | Superconductive quantum interferometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62086266A JPS63252272A (en) | 1987-04-08 | 1987-04-08 | Superconductive quantum interferometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63252272A true JPS63252272A (en) | 1988-10-19 |
Family
ID=13882016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62086266A Pending JPS63252272A (en) | 1987-04-08 | 1987-04-08 | Superconductive quantum interferometer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63252272A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254775A (en) * | 1987-04-10 | 1988-10-21 | Sumitomo Electric Ind Ltd | Superconductive quantum interferometer |
-
1987
- 1987-04-08 JP JP62086266A patent/JPS63252272A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254775A (en) * | 1987-04-10 | 1988-10-21 | Sumitomo Electric Ind Ltd | Superconductive quantum interferometer |
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