JPS63250207A - Manufacture of surface wave equipment - Google Patents

Manufacture of surface wave equipment

Info

Publication number
JPS63250207A
JPS63250207A JP8518687A JP8518687A JPS63250207A JP S63250207 A JPS63250207 A JP S63250207A JP 8518687 A JP8518687 A JP 8518687A JP 8518687 A JP8518687 A JP 8518687A JP S63250207 A JPS63250207 A JP S63250207A
Authority
JP
Japan
Prior art keywords
shield terminal
insulating resin
wave element
surface wave
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8518687A
Other languages
Japanese (ja)
Inventor
Hiromichi Yamada
山田 弘通
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP8518687A priority Critical patent/JPS63250207A/en
Publication of JPS63250207A publication Critical patent/JPS63250207A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To prevent the characteristic variation by connecting a lead frame and a surface wave element, after an insulating resin is coated to a surface wave element, bending a shield terminal to the rear surface side of a shield terminal and coating the conductive resin to the outer circumference of the insulating resin. CONSTITUTION:After an insulating resin 5 is coated to a surface wave element 1 to connect a lead frame 2, until the interval dimension of the tip of a shield terminal 4 and the insulating resin 5 comes to be the 1/2 or below of the interval dimension of the base end of the shield terminal 4 and the insulating resin 5, a shield terminal 5 is bent to the rear surface side of the surface wave element 1 and the tip of the shield terminal 4 is made into approximately the adhesion condition to the insulating resin 5 while a spring characteristic is held. By coating a conductive resin 7 to the outer circumference of the insulating resin 5 while the shield terminal 4 is included, the shield terminal 4 is buried to the conductive resin 7, the shield terminal 4 is not separated from the insulating resin 7 and connected through the conductive resin 7 without fail. Thus, the shieldability is improved and a stable characteristic can be obtained.

Description

【発明の詳細な説明】 皇果上■肌朋分互 本発明は表面波装置の製造方法、特に樹脂ディップ型表
面波装置の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a surface wave device, and particularly to a method for manufacturing a resin-dipped surface wave device.

l米少芸玉 従来、樹脂ディップ型の表面波装置において、そのリー
ドフレームは、第9図に示す如く、略中央部に直線状の
シールド端子部50が形成され、かつ該シールド端子部
50の左右両側に適数個のリード端子5工・・・からな
るリード端子部52が形成されていた。
Conventionally, in a resin-dipped surface acoustic wave device, the lead frame has a linear shield terminal portion 50 formed approximately in the center thereof, and the shield terminal portion 50 has A lead terminal portion 52 consisting of an appropriate number of five lead terminals was formed on both the left and right sides.

そして、このようなリードフレームを有する樹脂ディッ
プ型の表面波装置は、まず上記リード端子部52に表面
波素子(不図示)を接続し、次いで上記シールド端子部
50を上記表面波素子の裏面に形成されたシールド電極
に接続し、しかる後該表面波素子を絶縁性樹脂でディッ
ピングすることにより製造されていた。
In a resin-dipped surface acoustic wave device having such a lead frame, a surface acoustic wave element (not shown) is first connected to the lead terminal section 52, and then the shield terminal section 50 is connected to the back surface of the surface acoustic wave element. It was manufactured by connecting to the formed shield electrode and then dipping the surface acoustic wave element with an insulating resin.

一■が′ しようとする4 へ しかし、上記絶縁性樹脂にはシールド機能がないため、
上述の如く製造された表面波装置は、該表面波素子の表
面側がシールドされず、周囲からの影響によって特性変
化が生じるという問題点があった。
However, since the above insulating resin does not have a shielding function,
The surface acoustic wave device manufactured as described above has a problem in that the surface side of the surface acoustic wave element is not shielded, and characteristics change due to influences from the surroundings.

本発明は従来のこのような問題点を解決して、シールド
性を向上させて安定した特性を得ることのできる表面波
装置の製造方法を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a surface acoustic wave device that can improve shielding performance and obtain stable characteristics by solving these conventional problems.

田コ博@ MV r t 4 ;擾在Δf役上記目的を
達成するために本発明の表面波装置の製造方法は、リー
ド端子部とシールド端子部とからなりかつ上記シールド
端子部を2分割して一方をアース端子とし他方をシール
ド端子としたリードフレームを設け、該リードフレーム
と表面波素子とを接続し、次いで該表面波素子に絶縁性
樹脂を塗布して後、上記シールド端子の先端と上記絶縁
性樹脂との間隙寸法が上記シールド端子の基端と上記絶
縁性樹脂との間隙寸法の172以下となるまで上記シー
ルド端子を上記表面波素子の裏面側に折り曲げ、しかる
後該シールド端子を含んだ状態で上記絶縁性樹脂の外周
に導電性樹脂を塗布したことを要旨としている。
Hiroshi Tako @ MV r t 4; Δf role In order to achieve the above object, the method for manufacturing a surface acoustic wave device of the present invention comprises a lead terminal portion and a shield terminal portion, and the shield terminal portion is divided into two. A lead frame with one end as a ground terminal and the other as a shield terminal is provided, the lead frame and the surface wave element are connected, and then an insulating resin is applied to the surface wave element, and then the tip of the shield terminal and the other end are connected. Bend the shield terminal toward the back side of the surface wave element until the gap between the shield terminal and the insulating resin becomes 172 cm or less of the gap between the proximal end of the shield terminal and the insulating resin, and then fold the shield terminal. The gist is that a conductive resin is applied to the outer periphery of the insulating resin while containing the insulating resin.

庄−一一里 上記製造方法によれば、リードフレームを接続した表面
波素子に絶縁性樹脂を塗布し、しかる後、シールド端子
の先端と上記絶縁性樹脂との間隙寸法が上記シールド端
子の基端と上記絶縁性樹脂との間隙寸法の1/2以下と
なるまで上記シールド端子を上記表面波素子の裏面側に
折り曲げることによって、シールド端子の先端はバネ性
を有して絶縁性樹脂に略密着状態とされる。そして該シ
ールド端子を含んだ状態で上記絶縁性樹脂の外周に導電
性樹脂を塗布することによって、シールド端子が該導電
性樹脂に埋設され、シールド端子は絶縁性樹脂から分離
することなく導電性樹脂を介して確実に接続され、シー
ルド性の優れた表面波装置を製造することができる。
According to the above manufacturing method, an insulating resin is applied to the surface wave element connected to the lead frame, and then the gap between the tip of the shield terminal and the insulating resin is adjusted to the base of the shield terminal. By bending the shield terminal toward the back side of the surface wave element until the gap between the end and the insulating resin becomes 1/2 or less, the tip of the shield terminal has a spring property and is almost bonded to the insulating resin. It is considered to be in close contact. Then, by applying a conductive resin to the outer periphery of the insulating resin while including the shield terminal, the shield terminal is embedded in the conductive resin, and the shield terminal is covered with the conductive resin without separating from the insulating resin. It is possible to manufacture a surface acoustic wave device with excellent shielding properties, which is reliably connected through the .

大−族一文 第1図は本発明の製造方法に使用されるリードフレーム
2の展開図であって、リード端子部3とシールド端子部
4とを備えてなる。さらに該シールド端子部4は、一方
がアース端子4aに、他方がシールド端子4bに分離可
能となるようにU字状の長孔4cが形成されてなる。ま
た、上記リード端子部3は、シールド端子部4の両側に
設けられる。この実施例では該リード端子部3は4個の
リード端子3a、−・・・・・、3dで構成されており
、かつリード端子3a、3cは表面波素子1の入力側取
出電極と、リード端子3b、3dは出力側取出電極と接
続可能なように配設されている。
FIG. 1 is a developed view of a lead frame 2 used in the manufacturing method of the present invention, which includes a lead terminal portion 3 and a shield terminal portion 4. As shown in FIG. Further, the shield terminal portion 4 is formed with a U-shaped elongated hole 4c so that one side can be separated into a ground terminal 4a and the other side can be separated into a shield terminal 4b. Further, the lead terminal portions 3 are provided on both sides of the shield terminal portion 4. In this embodiment, the lead terminal section 3 is composed of four lead terminals 3a, . The terminals 3b and 3d are arranged so as to be connectable to the output side lead-out electrode.

以下、第2図〜第6B図に基づき本発明に係る表面波装
置の製造方法を詳説する。
Hereinafter, a method for manufacturing a surface acoustic wave device according to the present invention will be explained in detail based on FIGS. 2 to 6B.

まず第2図に示す如く、表面波素子1をシールド端子部
4の基端4dに挟着させることによって表面波素子1と
リードフレーム2とを接続する。
First, as shown in FIG. 2, the surface wave element 1 and the lead frame 2 are connected by sandwiching the surface wave element 1 between the base ends 4d of the shield terminal portions 4.

そしてリード端子部3a、3cの先端を表面波素子1の
入力側取出電極に半田付けし、リード端子部3b、3d
の先端を表面波素子lの出力側取出電極に半田付は接続
する。
Then, the tips of the lead terminal parts 3a and 3c are soldered to the input side extraction electrodes of the surface wave element 1, and the lead terminal parts 3b and 3d are soldered.
Connect the tip to the output side extraction electrode of the surface wave element l by soldering.

上記表面波素子1は、本実施例ではフィルタ素子が使用
されている。具体的には、該フィルタ素子は、圧電基板
上に入力側インターディジタルトランスジューサ(以下
rI DTJと略す)と出力側IDTとが配置されてお
り、入力側IDTに信号電圧を加えると圧電基板上に表
面波が発生し、それが出力側IDTで再び電気信号に変
換され、その時の変換特性を利用して所望の帯域周波数
を通過するように構成されている。そして、上記表面波
素子においては、その一端部に入力側取出電極が形成さ
れ、他端部に出力側取出電極が形成されている。
In this embodiment, a filter element is used as the surface wave element 1. Specifically, the filter element has an input-side interdigital transducer (hereinafter abbreviated as rI DTJ) and an output-side IDT arranged on a piezoelectric substrate, and when a signal voltage is applied to the input-side IDT, a signal is generated on the piezoelectric substrate. A surface wave is generated, which is converted back into an electrical signal at the output side IDT, and is configured to pass a desired band frequency by utilizing the conversion characteristics at that time. In the surface wave element, an input side lead-out electrode is formed at one end thereof, and an output side lead-out electrode is formed at the other end thereof.

しかして、このように表面波素子1とリードフレーム2
とを接続して後、第3A図及び第3B図に示す如く、上
記表面波素子1の外周にエポキシ系等の絶縁性樹脂5を
塗布する。この絶縁性樹脂5は、ディッピング法により
塗布されるが、表面波素子1の振動許容空間を得るため
に、空洞部6を形成した状態で樹脂ディップされる。こ
の空洞部6を形成する方法としては、表面波素子1の表
面にワックスを塗布し、その上に熱硬化性樹脂を塗布し
、焼付けてワックスを該樹脂中に吸収させることにより
空洞を形成する方法、或いは表面波素子1の表面にキャ
ップを被せる方法等任意の方法で行われる。
Therefore, in this way, the surface wave element 1 and the lead frame 2
After connecting them, as shown in FIGS. 3A and 3B, an insulating resin 5 such as epoxy resin is applied to the outer periphery of the surface acoustic wave element 1. This insulating resin 5 is applied by a dipping method, and in order to obtain a vibration permissible space for the surface wave element 1, the resin is dipped with a cavity 6 formed. The method for forming the cavity 6 is to apply wax to the surface of the surface wave element 1, apply a thermosetting resin thereon, and bake the wax to absorb the wax into the resin, thereby forming the cavity. This can be carried out by any method such as a method or a method of covering the surface of the surface wave element 1 with a cap.

次いで、シールド端子部4の先端4fをリードフレーム
2の基幹部2aがら切断し、アース端子4aと、シール
ド端子4bとを形成する。
Next, the tip 4f of the shield terminal portion 4 is cut from the main portion 2a of the lead frame 2 to form a ground terminal 4a and a shield terminal 4b.

しかる後、第4A図及び第4B図に示す如く、上記シー
ルド端子4bの先端4fと主起絶縁性樹脂5との間隙寸
法Tが上記シールド端子4bの基端と上記絶縁性樹脂5
との間隙寸法T゛の1/2以下となるまで上記シールド
端子4bを上記表面波素子1の裏面側に折り曲げ、次い
で第5A図及び第5B図に示す如く、ディンピング法に
より上記シールド端子4bを含んだ状態で上記絶縁性樹
脂5の外周に導電性樹脂7を塗布する。すなわち、T<
1/2T’ に設定し、シールド端子4bにバネ性を持
たせることによって、上記シールド端子4bと上記絶縁
性樹脂5とを密着可能な状態として上記導電性樹脂7に
ディッピングし、上記シールド端子4bが上記導電性樹
脂7に完全に埋設するように製造される。つまり、T≧
1/2T’ の場合は第7図に示す如く、シールド端子
4bが矢印A方向に反って外観形状が略Y字状となり、
見苦しなるばかりでな(、導電性樹脂7がB部で分断さ
れて絶縁性樹脂5とシールド端子4bとが分離する虞が
あり、信頼性に欠けるという新たな問題点が生じる可能
性がある。本発明はこの点にも着目し、信頼性の向上を
図ったものである。
Thereafter, as shown in FIGS. 4A and 4B, the gap T between the tip 4f of the shield terminal 4b and the main insulating resin 5 is equal to the distance between the proximal end of the shield terminal 4b and the insulating resin 5.
The shield terminal 4b is bent toward the back side of the surface acoustic wave element 1 until the gap becomes 1/2 or less of the gap T' between the shield terminal 4b and the shield terminal 4b by the dipping method, as shown in FIGS. 5A and 5B. The conductive resin 7 is applied to the outer periphery of the insulating resin 5 in a state containing the above. That is, T<
By setting the shield terminal 4b to 1/2T' and giving the shield terminal 4b a spring property, the shield terminal 4b and the insulating resin 5 are dipped into the conductive resin 7 so that the shield terminal 4b and the insulating resin 5 can be brought into close contact with each other. is manufactured so as to be completely embedded in the conductive resin 7. That is, T≧
In the case of 1/2T', as shown in Fig. 7, the shield terminal 4b is warped in the direction of arrow A, and the external shape becomes approximately Y-shaped.
Not only is it unsightly, but there is a risk that the conductive resin 7 will be separated at the portion B and the insulating resin 5 and the shield terminal 4b will be separated, which may cause a new problem of lack of reliability. The present invention also focuses on this point and aims to improve reliability.

また、絶縁性樹脂5はディッピング法により塗布されて
いるため、その膜厚にばらつきが生じる虞があるが、T
<1/2T’ に設定すると第8図に示す如く、シール
ド端子4bはバネ性を有すると共に膜厚が厚くなっても
シールド端子4bと絶縁性樹脂5とが密着するので、該
膜厚のばらつきも吸収することができるという効果があ
る。
Furthermore, since the insulating resin 5 is applied by a dipping method, there is a possibility that the film thickness may vary;
When set to <1/2T', as shown in FIG. 8, the shield terminal 4b has spring properties and even if the film thickness becomes thick, the shield terminal 4b and the insulating resin 5 are in close contact with each other, so that variations in the film thickness are reduced. It also has the effect of being able to absorb

最後に、第6A図及び第6B図に示す如く、該導電性樹
脂7およびシールド端子部4に絶縁性装置を施し表面波
装置の製造が終了する。
Finally, as shown in FIGS. 6A and 6B, an insulating device is applied to the conductive resin 7 and the shield terminal portion 4 to complete the manufacture of the surface acoustic wave device.

このように形成された表面波装置は、シールド端子4b
が導電性樹脂7に埋設され、表面波素子1の略全体がシ
ールドされることになるので、シールド性が向上し所期
の目的が達成できる。また、シールド端子の先端は折曲
されてバネ性を持たせており、絶縁性樹脂に略密着状態
とされるので、導電性樹脂7とシールド端子4bとが分
離することもなくシールド機能の信頼性も向上する。し
がち、シールド端子部4を2分割してアース端子とシー
ルド端子を形成したので、リードフレーム2に使用する
材料の利用効率も良く、安価かつ低コストで製造するこ
とができる。
The surface acoustic wave device formed in this way has a shield terminal 4b.
is embedded in the conductive resin 7, and substantially the entire surface wave element 1 is shielded, so that the shielding performance is improved and the intended purpose can be achieved. In addition, the tip of the shield terminal is bent to give it spring properties and is in close contact with the insulating resin, so the conductive resin 7 and the shield terminal 4b do not separate, making the shielding function reliable. Sexuality also improves. However, since the shield terminal portion 4 is divided into two to form the ground terminal and the shield terminal, the materials used for the lead frame 2 can be used efficiently and can be manufactured at low cost.

尚、本発明は上記実施例に限定されることはなく、フィ
ルタ素子以外の表面波素子、例えば共振子等にも同様に
適用することができるのはいうまでもなく、またシール
ド端子部4の先端部4fのリードフレーム2の基幹部2
aからの切断は絶縁性樹脂を表面波素子lに塗布する前
に実施してもよい。
It goes without saying that the present invention is not limited to the above-mentioned embodiments, and can be similarly applied to surface wave elements other than filter elements, such as resonators. Core section 2 of lead frame 2 at tip 4f
The cutting from a may be performed before applying the insulating resin to the surface wave element l.

溌」Rじ防果 以上詳述したように本発明に係る表面波装置の製造方法
は、リードフレームに表面波素子を接続し、次いで該表
面波素子に絶縁性樹脂を塗布して後、上記シールド端子
の先端と上記絶縁性樹脂との間隙寸法が上記シールド端
子の基端と上記絶縁性樹脂との間隙寸法の1/2以下と
なるまで上記シールド端子を上記表面波素子の裏面側に
折り曲げ、しかる後該シールド端子を含んだ状態で上記
絶縁性樹脂の外周に導電性樹脂を塗布したので、シール
ド端子が絶縁性樹脂と略密着状態となって導電性樹脂に
埋設され、シールド端子と絶縁性部材とは分離すること
なく該導電性部材を介して確実に接続され、表裏両面が
シールドされた信頼性の優れた表面波装置を製造するこ
とができる。従ってこのようにして製造された表面波装
置は、特性変動を防止することができ、しかも端子材料
も効率よく使用することができるので、安価に製造する
ことができ、生産性が向上するという効果がある。
As detailed above, the method for manufacturing a surface acoustic wave device according to the present invention involves connecting a surface acoustic wave element to a lead frame, coating the surface acoustic wave element with an insulating resin, and then performing the above-mentioned process. Bend the shield terminal toward the back side of the surface wave element until the gap between the tip of the shield terminal and the insulating resin becomes 1/2 or less of the gap between the base end of the shield terminal and the insulating resin. After that, a conductive resin was applied to the outer periphery of the insulating resin including the shield terminal, so that the shield terminal was buried in the conductive resin in close contact with the insulating resin, and was insulated from the shield terminal. It is possible to manufacture a highly reliable surface acoustic wave device which is securely connected to the conductive member through the conductive member without being separated from the conductive member, and whose front and back surfaces are shielded. Therefore, the surface acoustic wave device manufactured in this way can prevent characteristic fluctuations and use terminal materials efficiently, so it can be manufactured at low cost and has the effect of improving productivity. There is.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はリードフレームの正面図、第2図〜第6B図は
本発明に係る表面波装置の製造方法の一例を示した工程
図であり、第2図はリードフレームと表面波素子とが接
続された状態を示す斜視図、第3A図は表面波素子に絶
縁性樹脂が塗布されかつシールド端子部がリードフレー
ムから切断された時の状態を示す斜視図、第3B図は第
3A図の断面図、第4A図はシールド端子を表面波素子
の裏面側に折り曲げた時の状態を示す斜視図、第4B図
は第4A図の断面図、第5A図は絶縁性樹脂の外周に導
電性樹脂が塗布された時の状態を示す斜視図、第5B図
は第5A図の断面図、第6A図は本発明の製造方法によ
り製造された表面波装置の斜視図、第6B図は第6A図
の断面図、第7図は本発明の製造方法以外の製法により
製造された表面波装置の一例を示す断面図、第8図は本
発明の製造方法により製造された表面波装置の他の例を
示す断面図、第9図は従来例のリードフレームの正面図
である。 1・・・表面波素子、2・・・リードフレーム、3・・
・リード端子部、4・・・シールド端子部、4a・・・
アース端子、4b・・・シールド端子、5・・・絶縁性
樹脂、7・・・導電性樹脂、T、T’ ・・・間隙寸法
。 4f           第6B図 第3A図 第4A図 第3B図 第9図
FIG. 1 is a front view of a lead frame, FIGS. 2 to 6B are process diagrams showing an example of the method for manufacturing a surface acoustic wave device according to the present invention, and FIG. 2 is a front view of a lead frame and a surface acoustic wave element. Figure 3A is a perspective view showing the connected state, Figure 3A is a perspective view showing the state when the surface wave element is coated with insulating resin and the shield terminal part is cut from the lead frame, and Figure 3B is the same as Figure 3A. 4A is a perspective view showing the state when the shield terminal is bent toward the back side of the surface wave element, FIG. 4B is a sectional view of FIG. 4A, and FIG. FIG. 5B is a sectional view of FIG. 5A, FIG. 6A is a perspective view of the surface acoustic wave device manufactured by the manufacturing method of the present invention, and FIG. 6B is a perspective view showing the state when the resin is applied. 7 is a sectional view showing an example of a surface wave device manufactured by a manufacturing method other than the manufacturing method of the present invention, and FIG. 8 is a sectional view of another surface wave device manufactured by the manufacturing method of the present invention. A sectional view showing an example, and FIG. 9 is a front view of a conventional lead frame. 1...Surface wave element, 2...Lead frame, 3...
・Lead terminal part, 4... Shield terminal part, 4a...
Earth terminal, 4b... Shield terminal, 5... Insulating resin, 7... Conductive resin, T, T'... Gap dimension. 4f Figure 6B Figure 3A Figure 4A Figure 3B Figure 9

Claims (1)

【特許請求の範囲】[Claims] (1)リード端子部とシールド端子部とからなり、かつ
上記シールド端子部を2分割して一方をアース端子とし
、他方をシールド端子としたリードフレームを設け、 該リードフレームと表面波素子とを接続し、次いで該表
面波素子に絶縁性樹脂を塗布して後、上記シールド端子
の先端と上記絶縁性樹脂との間隙寸法が上記シールド端
子の基端と上記絶縁性樹脂との間隙寸法の1/2以下と
なるまで上記シールド端子を上記表面波素子の裏面側に
折り曲げ、しかる後該シールド端子を含んだ状態で上記
絶縁性樹脂の外周に導電性樹脂を塗布したことを特徴と
する表面波装置の製造方法。
(1) Provide a lead frame consisting of a lead terminal portion and a shield terminal portion, and divide the shield terminal portion into two and use one side as a ground terminal and the other as a shield terminal, and connect the lead frame and the surface wave element. After connecting and then applying an insulating resin to the surface wave element, the gap between the tip of the shield terminal and the insulating resin is 1 of the gap between the proximal end of the shield terminal and the insulating resin. /2 or less, the shield terminal is bent toward the back side of the surface wave element, and then a conductive resin is applied to the outer periphery of the insulating resin while including the shield terminal. Method of manufacturing the device.
JP8518687A 1987-04-06 1987-04-06 Manufacture of surface wave equipment Pending JPS63250207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8518687A JPS63250207A (en) 1987-04-06 1987-04-06 Manufacture of surface wave equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8518687A JPS63250207A (en) 1987-04-06 1987-04-06 Manufacture of surface wave equipment

Publications (1)

Publication Number Publication Date
JPS63250207A true JPS63250207A (en) 1988-10-18

Family

ID=13851628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8518687A Pending JPS63250207A (en) 1987-04-06 1987-04-06 Manufacture of surface wave equipment

Country Status (1)

Country Link
JP (1) JPS63250207A (en)

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