JPS63247904A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS63247904A JPS63247904A JP8321787A JP8321787A JPS63247904A JP S63247904 A JPS63247904 A JP S63247904A JP 8321787 A JP8321787 A JP 8321787A JP 8321787 A JP8321787 A JP 8321787A JP S63247904 A JPS63247904 A JP S63247904A
- Authority
- JP
- Japan
- Prior art keywords
- film
- alumina
- thin film
- magnetic head
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 77
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 31
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000000696 magnetic material Substances 0.000 abstract description 7
- 229910020018 Nb Zr Inorganic materials 0.000 abstract description 3
- 229920006268 silicone film Polymers 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000006088 Fotoceram Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、磁気記録媒体に信号を記録再生する場合に用
いる薄膜磁気ヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film magnetic head used for recording and reproducing signals on a magnetic recording medium.
従来の技術
従来の薄膜磁気ヘッドは、たとえば第３図に示すように
非磁性の７オトセラム基板１にスバ、ツタリング法によ
りＣｏ −Ｎｂ−Ｚｒアモルファス膜からなる磁性体ム
２．磁性体Ｂ３．磁性体Ｃ４が形成される。これらの磁
性体２．３．４１−ｉギャップ１０を含むリング型磁気
ヘッドとしての磁気回路を構成し、又その磁気回路にア
ルミニウム等からなる１ターンコイル９力１鎖交してい
る。コイル９及び磁性体２〜４はアルミナ膜からなる非
磁性絶縁膜６．７によって電気的に絶縁されている。又
同じくアルミナ膜からなる非磁性絶縁膜６．８は、磁性
体２〜４を包むように保護しており、基板１及びカバー
基板１１の間でヘッド主要部を支持固定するための構造
体としての役割をはたしている。2. Description of the Related Art A conventional thin-film magnetic head is manufactured by, for example, as shown in FIG. 3, a magnetic film 2. made of a Co--Nb--Zr amorphous film is deposited on a non-magnetic Otoceram substrate 1 by a tuttering method. Magnetic material B3. A magnetic body C4 is formed. A magnetic circuit as a ring-shaped magnetic head including the magnetic material 2.3.41-i gap 10 is constructed, and a 1-turn coil 9 made of aluminum or the like is interlinked with the magnetic circuit. The coil 9 and the magnetic bodies 2 to 4 are electrically insulated by a nonmagnetic insulating film 6.7 made of an alumina film. The non-magnetic insulating film 6.8, also made of alumina film, protects the magnetic bodies 2 to 4 by enveloping them, and serves as a structure for supporting and fixing the main part of the head between the substrate 1 and the cover substrate 11. playing a role.
発明が解決しようとする問題点
このような薄膜磁気ヘッドでは複数の非磁性絶縁膜が慴
動面に現われる。しかし各層は必ずしも下地条件が同じ
でないために膜質が異なる事があり摩耗特性が異なる場
合がある。例えば第３図の例では、フォトセラム基板１
の上に形成されたアルミナ膜５〜７の硬さは、アルミナ
膜８のうちで、アモルファス膜４の上に形成された部分
の硬さよりも軟らかいために、この部分で優先的な摩耗
が起こるという事が確認できた。このようｌアルξす膜
の偏摩耗はへラド摺動面の凹凸音生じさせ、記録媒体と
の良好な接触が損なわれる。Problems to be Solved by the Invention In such a thin film magnetic head, a plurality of nonmagnetic insulating films appear on the sliding surface. However, since the underlying conditions of each layer are not necessarily the same, the film quality may differ and the wear characteristics may differ. For example, in the example shown in FIG.
Since the hardness of the alumina films 5 to 7 formed thereon is softer than that of the part of the alumina film 8 formed on the amorphous film 4, preferential wear occurs in this part. This was confirmed. Such uneven wear of the film causes uneven noise on the sliding surface of the spatula, impairing good contact with the recording medium.
このようなことは、アルミナ膜に限らずよく使用される
絶縁膜たとえば５１０２膜でも生起する。This kind of thing occurs not only with alumina films but also with commonly used insulating films, such as 5102 films.
又このような現象は」二記のようなリングタイプのへ・
ノドに限らず、框直ヘッド等でも起こりうる。Also, this phenomenon is caused by the ring type as described in 2.
It can occur not only on the throat but also on the straight head of the stile.
問題点を解決するための手段
上記問題点を解決するために本発明では、非磁性絶縁層
の下層が上記非磁性絶縁層とは異なる材料より成ってい
る部分には非磁性下地層を介在させる、。Means for Solving the Problems In order to solve the above problems, in the present invention, a nonmagnetic underlayer is interposed in the portion where the lower layer of the nonmagnetic insulating layer is made of a different material from the nonmagnetic insulating layer. ,.
作用
このような下地層を設けることにより、各非磁性層は下
地条件がほぼ等しくなりほぼ等しい膜質で成長するよう
になり、摩耗特性がそろうようになる。その結果、偏摩
耗が起こりにくくなる。Effect: By providing such an underlayer, each nonmagnetic layer has approximately the same underlayer conditions, grows with approximately the same film quality, and has uniform wear characteristics. As a result, uneven wear becomes less likely to occur.
実施例 まず、本発明を導くに至った実験結果を述べる。Example First, the experimental results that led to the present invention will be described.
フォトセラム基板上及びＣｏ−Ｎｂ−Ｚｒアモルファス
膜が既に３μｍ形成されているフォトセラム基板上にＲ
Ｆマグネトロンスパヮタ法でアルミナ膜７μｍを形成し
、形成したアルミナ膜のヌープ硬さを測定した。ヌープ
硬さは荷重６ｇ一定で測定した。結果を表１の１．２に
示す。R was applied on the photoceram substrate and on the photoceram substrate on which the Co-Nb-Zr amorphous film had already been formed to a thickness of 3 μm.
An alumina film of 7 μm was formed using the F magnetron sputter method, and the Knoop hardness of the formed alumina film was measured. Knoop hardness was measured under a constant load of 6 g. The results are shown in 1.2 of Table 1.
（以下余 白）
父上記のアルミナ膜の下地膜としてＤＣマグネトロンス
パッタによるシリコン膜を設けた場合についても同様の
実験を行った。その結果を同表の３．４に示す。(Left below) Similar experiments were also conducted in the case where a silicon film was provided by DC magnetron sputtering as the base film for the alumina film described above. The results are shown in 3.4 of the same table.
シリコン膜は多結晶シリコンターゲットを用いて形成条
件は、投入電力Ｉ Ｋｗ 、スパッタガス圧５ Ｘ １
０”” ＴＯｒｒ 、基板ターゲット間距離１００鵡と
した。又、アルミナ膜は、焼結アルミナターゲットを用
いて、形成条件は、投入電力１．５Ｋｗ、スパッタガス
圧３Ｘ１０ Ｔ：ｏｒｒ、 基板ヌープ、。The silicon film is formed using a polycrystalline silicon target, and the formation conditions are: input power I Kw, sputtering gas pressure 5 x 1
0"" TOrr, and the distance between the substrate and target was 100 mm. The alumina film was formed using a sintered alumina target, and the formation conditions were: input power of 1.5 Kw, sputtering gas pressure of 3×10 T:orr, and Knoop substrate.
ト間距離６５Ｗｓとした。フォトセラム上にシリコン下
地層なしで形成されたアルミナ膜のヌープ硬さは８００
〜９ｏＯであった。一方Ｃｏ −Ｎｂ−Ｚｒアモルファ
ス膜を介して形成されたアルミナ膜のそれは１３ｏＯ〜
１４００とかなり大きい値を示した。この差が先に述べ
た偏摩耗の現象に対応していると思われる。The distance between the two ends was set at 65 Ws. The Knoop hardness of an alumina film formed on photoceram without a silicon underlayer is 800.
~9oO. On the other hand, that of the alumina film formed via the Co-Nb-Zr amorphous film is 13oO~
It showed a fairly large value of 1400. This difference seems to correspond to the phenomenon of uneven wear mentioned above.
次に上記２種類の各アルミナ膜に下地層として０．１μ
ｍ厚のシリコン膜を形成した時のヌープ硬さを測定した
ところ共に１２０ｏ〜１３０ｏであった。すなわち膜厚
０．１μｍのシリコン膜がその上に形成されるアルミナ
膜の膜質を支配し、結果として硬さが一定の範囲におさ
まったものと考えられる。Next, a base layer of 0.1 μm was applied to each of the above two types of alumina films.
When the Knoop hardness of a silicon film having a thickness of m was measured, it was 120° to 130° in both cases. In other words, it is considered that the silicon film with a thickness of 0.1 μm dominates the film quality of the alumina film formed thereon, and as a result, the hardness falls within a certain range.
このような知識をもとに、実際の薄膜へ、ンドにおいて
、アルミナ絶縁膜が異種材料の上に形成される部分には
、すべてシリコンの下地層を介在させて成膜したところ
、アルミナ各層間の偏摩耗が極めて小さくなることがわ
かった。Based on this knowledge, when forming an actual thin film, we formed a film with a silicon underlayer interposed in all parts where the alumina insulating film was formed on a different material, and found that the alumina insulating film was deposited with a silicon base layer interposed between each layer. It was found that the uneven wear of the steel was extremely small.
なおアルミナ膜の下層がアルミナ膜である場合上部のア
ルミナ膜の膜質は下層のそれと同じになることも実験的
に確認された。It has also been experimentally confirmed that when the lower layer of the alumina film is an alumina film, the film quality of the upper alumina film is the same as that of the lower layer.
第一の実施例を第１図に従って説明する。第１図はリン
グ型薄膜磁気ヘッドの一例に本発明を適用した図であり
、摺動面から見た図面である。非磁性のフォトセラム基
板１のうえに下地層として膜厚０．１ μｍのシリコン
膜をＤＯマグネトロンスパッタリング法で形成した後、
非磁性絶縁膜としてのアルミナ膜６〜７をＲＦマグネト
ロンスパッタリング法で形成する。一方ｃｏ −Ｎｂ
−ｚｒ アモルファス膜からなる磁性体２〜４をＲＦ
スパ・ンタリング法で形成する。なお磁性体３と４の間
にはギヤ・ツブ１０が形成されており材料は５１０２で
ＲＦスパッタ法で形成される。上記磁性体４のうえに先
と同じように下地層として膜厚０．１μｍのシリコン膜
１３を形成する。この後、アルミナ膜７とシリコン膜１
３をおおうようにしてアルミナ膜８が形成される。この
上部をう・ンピング法等で平坦化した後、カバー基板１
１が貼り合せられる。A first embodiment will be described with reference to FIG. FIG. 1 is a diagram in which the present invention is applied to an example of a ring-type thin film magnetic head, as seen from the sliding surface. After forming a silicon film with a thickness of 0.1 μm as an underlayer on the nonmagnetic photoceram substrate 1 by DO magnetron sputtering method,
Alumina films 6 to 7 as nonmagnetic insulating films are formed by RF magnetron sputtering. On the other hand, co -Nb
-zr Magnetic bodies 2 to 4 made of amorphous film are RF
Formed by spun-interning method. A gear knob 10 is formed between the magnetic bodies 3 and 4, and is made of 5102 material by RF sputtering. A silicon film 13 having a thickness of 0.1 μm is formed as a base layer on the magnetic body 4 in the same manner as before. After this, alumina film 7 and silicon film 1
An alumina film 8 is formed to cover 3. After flattening this upper part by a rolling method etc., the cover substrate 1
1 is pasted.
このような構成にする事により、摺動面に露出したすべ
てのアルミナ膜６〜８がほぼ等しい硬さになり、各層の
間に発生する偏摩耗の絶対量は、１６０Å以下となった
。なお、従来例である第３図におけるこの値は６００人
であった。With this configuration, all the alumina films 6 to 8 exposed on the sliding surface had approximately the same hardness, and the absolute amount of uneven wear occurring between each layer was 160 Å or less. In addition, this value in FIG. 3, which is a conventional example, was 600 people.
第２の実施例を第２図に従って説明する。第２図ａは、
主磁極型垂直ヘッドの一例に本発明を適用した場合の断
面図である。フェライト基板１４のうえに、下地層とし
てシリコン膜１２を膜厚０．１μｍだけＤＣマグネトロ
ンスパッタ法で形成し、その上にアルミナ膜６．７をＲ
Ｆマグネトロン法で形成する。さらにＧｏ −Ｗｂ−Ｚ
ｒ アモルファス膜からなる主磁極１６を形成後、上
記と同じようにして膜厚０．１μｍのシリコン膜１３を
形成する。この後アルミナ膜８を形成して、う・ンビン
グによる平坦化を経て、カバー基板１１とはり合わせら
れる。第２図すが摺動面から見た図面で、この面に露出
しているアルミナ膜６〜８は全て、ｔ’ｈぼ等しい硬さ
になっており、アルミナ膜各層の間での偏摩耗の絶対値
は、１２０人であった。なお下地層としてのシリコン膜
を設けない場合の値は約ＳＯＯ入であった。A second embodiment will be described with reference to FIG. Figure 2 a is
FIG. 3 is a cross-sectional view when the present invention is applied to an example of a main pole type vertical head. On the ferrite substrate 14, a silicon film 12 is formed as a base layer to a thickness of 0.1 μm by DC magnetron sputtering, and an alumina film 6.7 is formed on it by R.
Formed by F magnetron method. Furthermore, Go-Wb-Z
After forming the main magnetic pole 16 made of an amorphous film, a silicon film 13 having a thickness of 0.1 μm is formed in the same manner as described above. Thereafter, an alumina film 8 is formed, flattened by rolling, and then bonded to the cover substrate 11. Figure 2 is a drawing seen from the sliding surface, and the alumina films 6 to 8 exposed on this surface all have approximately the same hardness t'h, and uneven wear between each alumina film layer. The absolute value was 120 people. Note that the value when no silicon film was provided as an underlayer was about SOO.
以上の説明では薄膜リングヘッド及び薄膜垂直ヘッドを
例にとって本発明の実施例を示したが、更に広く一般に
膜質差に起因する硬さの不均一による偏摩耗の問題を有
するような場合に本発明を適用することができる。In the above explanation, the embodiments of the present invention have been shown by taking a thin film ring head and a thin film vertical head as examples, but the present invention can be applied more broadly to cases where uneven wear is a problem due to uneven hardness caused by differences in film quality. can be applied.
又非磁性絶縁膜はＡ／２０．のスパッタ膜の場合を示し
たが、５ｉｎ２のスパッタ膜でも同様の効果が得られた
。Also, the non-magnetic insulating film is A/20. Although the case of a sputtered film of 5 in 2 was shown, similar effects were obtained with a 5 in 2 sputtered film.
更に下地層としては、以下のように種々の検討を行なっ
た。Furthermore, various studies were conducted regarding the base layer as described below.
まず金属としては、 ムｌ 、 Ｑｎ 、 Ｔｉ 、
Ｏｒ各各の蒸着膜又はスパッタ膜を試みたところ、これ
らにいずれもＳｌと同様の効果が得られた。First of all, as metals, Mul, Qn, Ti,
When we tried vapor deposited films or sputtered films of Or, each of them produced the same effect as Sl.
半導体では、Ｇｏ の蒸着膜又はスパッタ膜を試みたと
ころ、８ｉと同様の効果が得られた。For semiconductors, we tried using a vapor-deposited or sputtered Go film, and the same effect as 8i was obtained.
誘電体では、まず酸化物系では、概して極めて大きな効
果は見られなかったが、その上に付着するム１２０３等
の膜質差を少なくする傾向を有していることは確認され
た。これに対して窒化物系、特にＳｉＮ のスバ・フタ
膜ではＳｉと同様の顕著な効果が見られた。As for dielectric materials, first of all, although a very large effect was not observed in the case of oxide-based materials, it was confirmed that they tend to reduce the difference in film quality of the film 1203 etc. that adheres thereon. On the other hand, a remarkable effect similar to that of Si was observed in the nitride-based sub-lid film, especially SiN.
このように本発明における下地膜の選択幅は非常に広い
ことが確認された。As described above, it was confirmed that the selection range of the base film in the present invention is very wide.
発明の効果
本発明によれば、ヘッド摺動面に露出したすべての非磁
性絶縁膜の硬さが等しくなるために、ヘッド摺動面の偏
摩耗が極めて小さくなり、ヘッドと媒体のスペース損失
の小さい薄膜磁気ヘリドを得る事ができる。Effects of the Invention According to the present invention, all the nonmagnetic insulating films exposed on the head sliding surface have the same hardness, so uneven wear on the head sliding surface is extremely small, and space loss between the head and the medium is reduced. Small thin film magnetic helides can be obtained.
第１図は本発明の第１の実施例を示す断面図、第２図は
第２の実施例を示す断面図、第３図は従来ｆｌＪ ’（
ｒ−示す断面図である。
１・・・・・・基板、２〜４・・・・・磁性体Ａ〜Ｃ，
ｓ〜８・・・・・非磁性絶縁膜ム〜Ｄ、９・・・・・・
コイル、１０・・・・・ギャフプ、１１・・・・・カバ
ー基板、１２．１３・・・・・・ンリコン膜、１４．・
・・・・・フェライト基板、１５・・・・・磁性体、１
６・・・・・主６極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｆ−
１瀉１
２−−一話＋王イ１ミ４
３−＝、 Ｂ
４＝−＝Ｃ
５−ｘｐ＊ｎＩｅｌｈｐＸｓ
８−、 ρ
’０−＋１’ｙデ
１ｆ−−−カＩぐ一羞不ｊ
イ２．１３−−−ンリゴソ刀稟
第３図FIG. 1 is a sectional view showing a first embodiment of the present invention, FIG. 2 is a sectional view showing a second embodiment, and FIG. 3 is a sectional view showing a conventional flJ'(
FIG. 1...Substrate, 2-4...Magnetic materials A-C,
s~8...Nonmagnetic insulating film M~D, 9...
Coil, 10...Gap, 11...Cover substrate, 12.13...Nilicon film, 14.・
... Ferrite substrate, 15 ... Magnetic material, 1
6... Main 6 poles. Name of agent: Patent attorney Toshio Nakao and 1 other person f-
1〉1 2--Episode + King I 1 Mi 4 3-=, B 4=-=C 5-xp*nIelhpXs 8-, ρ '0-+1'y de 1f---K Iguichi shame j A2.13 --- Nrigoso sword drawing 3
Claims (8)
記絶縁層の下層が上記絶縁層とは異なる材料である部分
には、非磁性の下地層が介在していることを特徴とする
薄膜磁気ヘッド。(1) A thin film magnetic head including a non-magnetic insulating layer, characterized in that a non-magnetic underlayer is interposed in a portion where the lower layer of the insulating layer is made of a different material from the insulating layer. Thin film magnetic head.
ＲＦスパッタ膜であることを特徴とする特許請求の範囲
第１項記載の薄膜磁気ヘッド。(2) The thin film magnetic head according to claim 1, wherein the nonmagnetic insulating layer is an RF sputtered film of Al_2O_3 or SiO_2.
の範囲第１項記載の薄膜磁気ヘッド。(3) The thin film magnetic head according to claim 1, wherein the underlayer is a metal layer.
た一種であることを特徴とする特許請求の範囲第３項記
載の薄膜磁気ヘッド。(4) The thin film magnetic head according to claim 3, wherein the metal layer is one selected from Al, Cn, Ti, and Cr.
求の範囲第１項記載の薄膜磁気ヘッド。(5) The thin film magnetic head according to claim 1, wherein the underlayer is a semiconductor layer.
ることを特徴とする特許請求の範囲第５項記載の薄膜磁
気ヘッド。(6) The thin film magnetic head according to claim 5, wherein the semiconductor layer is one selected from Si and Ge.
の範囲第１項記載の薄膜磁気ヘッド。(7) The thin film magnetic head according to claim 1, wherein the underlayer is a dielectric layer.
求の範囲第７項記載の薄膜磁気ヘッド。(8) The thin film magnetic head according to claim 7, wherein the dielectric layer is made of nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8321787A JPS63247904A (en) | 1987-04-03 | 1987-04-03 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8321787A JPS63247904A (en) | 1987-04-03 | 1987-04-03 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63247904A true JPS63247904A (en) | 1988-10-14 |
Family
ID=13796147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8321787A Pending JPS63247904A (en) | 1987-04-03 | 1987-04-03 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63247904A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2834375A1 (en) * | 2001-12-28 | 2003-07-04 | Commissariat Energie Atomique | INTEGRATED MAGNETIC HEAD FOR MAGNETIC RECORDING AND METHOD OF MANUFACTURING THE MAGNETIC HEAD |
-
1987
- 1987-04-03 JP JP8321787A patent/JPS63247904A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2834375A1 (en) * | 2001-12-28 | 2003-07-04 | Commissariat Energie Atomique | INTEGRATED MAGNETIC HEAD FOR MAGNETIC RECORDING AND METHOD OF MANUFACTURING THE MAGNETIC HEAD |
| WO2003056548A1 (en) * | 2001-12-28 | 2003-07-10 | Commissariat A L'energie Atomique | Integrated magnetic head for magnetic recording and method for making same |
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